CN215644463U - Gallium nitride-based power switch device - Google Patents
Gallium nitride-based power switch device Download PDFInfo
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- CN215644463U CN215644463U CN202121983738.6U CN202121983738U CN215644463U CN 215644463 U CN215644463 U CN 215644463U CN 202121983738 U CN202121983738 U CN 202121983738U CN 215644463 U CN215644463 U CN 215644463U
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Abstract
The utility model discloses a gallium nitride-based power switch device, which comprises a packaging shell, wherein the packaging shell comprises an installation bottom plate, an installation middle frame and an installation top plate, a gallium nitride-based chip positioned at the center of the installation middle frame is also installed between the installation bottom plate and the installation top plate, a chip connecting pin extending out of the installation middle frame is arranged on the gallium nitride-based chip, the installation bottom plate and the installation top plate both extend out of the installation middle frame, a heat dissipation groove is formed between the installation bottom plate and the installation top plate and the installation middle frame, and a heat dissipation assembly positioned in the heat dissipation groove is also arranged on the installation middle frame. This gallium nitride base power switch device can be with the heat conduction that gallium nitride base chip produced to top fin and side fin on through top heat-conducting plate and side heat-conducting plate, then through being the top fin and the side fin that linear array distributes and shed the heat, can shelter from the dust from top and bottom by mounting plate and installation roof simultaneously, prevents that the dust from adhering on top fin and side fin.
Description
Technical Field
The utility model relates to the technical field of gallium nitride-based switches, in particular to a gallium nitride-based power switch device.
Background
The power switch tube is a triode which can bear larger current, has smaller leakage current and better saturation conduction and cut-off characteristics under certain conditions, wherein the triode can generate certain heat in the running state, and if the heat cannot be dissipated in time, the triode can be burnt down due to long-term accumulation.
According to a disclosed gallium nitride base power switch device of patent No. CN210073821U, it can directly dispel the heat to the chip, and have a plurality of heat dissipation positions, increase the radiating effect, but discover that current radiator unit sets up in gallium nitride base power switch device's top or bottom more in the in-service use process, when radiator fan's air current was through, its heat dissipation contact surface undersize, the radiating effect is not good, and the very easy adhesion of dust that the air current was kicked up is at radiator unit's top and bottom, lead to radiator unit's radiating effect to worsen.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a gallium nitride-based power switch device, which is used for solving the problems that the heat dissipation contact surface of the existing heat dissipation component is too small when the airflow of a heat dissipation fan passes through, and dust raised by the airflow is easily adhered to the top and the bottom of the heat dissipation component.
In order to achieve the purpose, the utility model provides the following technical scheme: the utility model provides a gallium nitride based power switch device, includes packaging shell, packaging shell includes mounting plate, installation center and installation roof, mounting plate with still install between the installation roof and be located the gallium nitride based chip of installation center department, be provided with on the gallium nitride based chip and extend the chip connecting pin of installation center, mounting plate with the installation roof all extends the installation center, and with form the heat dissipation recess between the installation center, still be provided with the radiator unit who is located the heat dissipation recess on the installation center.
Preferably, the mounting bottom plate and the mounting top plate extend out of the mounting middle frame portion and a heat dissipation groove formed between the mounting middle frame is of an inverted U-shaped structure, and the chip connection pins are located at openings of the inverted U-shaped structure of the heat dissipation groove.
Preferably, the heat dissipation assembly comprises top heat dissipation fins, the top heat dissipation fins are arranged at the bent part of the inverted U-shaped structure of the heat dissipation groove in a linear array mode, and one ends of the top heat dissipation fins extend into the mounting middle frame.
Preferably, the radiating component further comprises a top heat conducting plate, the top heat conducting plate is mounted on the port of the top radiating fin extending to the mounting middle frame, and is attached to the gallium nitride-based chip.
Preferably, the heat dissipation assembly further comprises side cooling fins, the side cooling fins are arranged on two sides of the inverted U-shaped structure of the heat dissipation groove in a linear array mode, and one ends of the side cooling fins extend into the mounting middle frame.
Preferably, the heat dissipation assembly further comprises side heat conducting plates, the side heat conducting plates are symmetrically arranged on the ports, extending to the mounting middle frame, of the side heat radiating fins and are attached to the gallium nitride-based chip.
Preferably, the other end of the top radiating fin, which is located at the bent opening of the inverted U-shaped structure of the radiating groove, is flush with the parts of the mounting bottom plate and the mounting top plate, which extend out of the mounting middle frame.
Preferably, the other ends of the side radiating fins, which are positioned at two sides of the inverted U-shaped structure of the radiating groove, are flush with the parts of the mounting bottom plate and the mounting top plate, which extend out of the mounting middle frame.
In the technical scheme, the utility model has the beneficial effects that:
1. according to the gallium nitride-based power switch device, heat generated by a gallium nitride-based chip can be conducted to the top radiating fins and the side radiating fins through the top heat conducting plate and the side heat conducting plate, and then the heat is dissipated through the top radiating fins and the side radiating fins which are distributed in a linear array.
2. This gallium nitride base power switch device, through make top fin and side fin lie in the part of heat dissipation recess and mounting plate extend the outside part of installation center flush of installation center, can shelter from the dust from top and bottom by mounting plate and mounting plate, prevent that the dust from adhering on top fin and side fin, influence the radiating effect of side fin.
Drawings
In order to more clearly illustrate the embodiments of the present application or technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present invention, and other drawings can be obtained by those skilled in the art according to the drawings.
FIG. 1 is a schematic perspective view of the present invention;
FIG. 2 is a front cross-sectional structural view of the present invention;
FIG. 3 is a side cross-sectional structural view of the present invention.
In the figure: 1. a package housing; 2. mounting a bottom plate; 3. installing a middle frame; 4. installing a top plate; 5. a gallium nitride-based chip; 6. a chip connection pin; 7. a heat dissipating component; 8. a top heatsink; 9. a top heat conducting plate; 10. a side heat sink; 11. and (4) side heat guide plates.
Detailed Description
In order to make the technical solutions of the present invention better understood, those skilled in the art will now describe the present invention in further detail with reference to the accompanying drawings.
Referring to fig. 1 to 3, the present invention provides a technical solution: a gallium nitride-based power switch device comprises a packaging shell 1, the packaging shell 1 comprises a mounting bottom plate 2, a mounting middle frame 3 and a mounting top plate 4, a gallium nitride-based chip 5 positioned at the center of the mounting middle frame 3 is also arranged between the mounting bottom plate 2 and the mounting top plate 4, a chip connecting pin 6 extending out of the mounting middle frame 3 is arranged on the gallium nitride-based chip 5, the mounting bottom plate 2 and the mounting top plate 4 both extend out of the mounting middle frame 3 and form a heat dissipation groove with the mounting middle frame 3, a heat dissipation component 7 positioned in the heat dissipation groove is also arranged on the mounting middle frame 3, the heat dissipation groove formed between the part of the mounting bottom plate 2 and the mounting top plate 4 extending out of the mounting middle frame 3 and the mounting middle frame 3 is of an inverted U-shaped structure, the chip connecting pin 6 is positioned at the opening of the inverted U-shaped structure of the heat dissipation groove, the structure design is convenient for welding the chip connecting pin 6 on a mainboard, make installation bottom plate 2, installation center 3 and installation roof 4 in the gallium nitride base chip 5 of installation keep the horizontality, installation bottom plate 2 and installation roof 4 extend installation center 3 part this moment can effectually provide the effect of sheltering from for radiator unit 7 in the heat dissipation recess, prevent that the dust from gathering on radiator unit 7, influence the radiating effect.
Wherein, the heat-dissipating component 7 includes a top heat-dissipating fin 8 and a top heat-conducting plate 9, the top heat-dissipating fin 8 is arranged at the bent part of the inverted U-shaped structure of the heat-dissipating groove in a linear array, one end of the top heat-dissipating fin 8 extends into the installation middle frame 3, the other end of the top heat-dissipating fin 8 at the bent part of the inverted U-shaped structure of the heat-dissipating groove is flush with the part of the installation bottom plate 2 and the installation top plate 4 extending out of the installation middle frame 3, the top heat-conducting plate 9 is installed on the port of the top heat-dissipating fin 8 extending into the installation middle frame 3 and is attached to the gallium nitride-based chip 5, the above-mentioned structural design facilitates the heat-conducting plate 9 to conduct the heat generated by the gallium nitride-based chip 5 to the top heat-dissipating fin 8 distributed in a linear array, and dissipate the heat through the top heat-dissipating fin 8, meanwhile, the top heat-dissipating fin 8 is distributed in a linear array to effectively increase the contact area with the air flow, thereby increasing the heat-dissipating effect, and the part of the top heat-dissipating fin 8 at the bent part at the inverted U-dissipating groove and the installation bottom plate 2 and the installation bottom plate and the installation top heat-dissipating plate 4 The part of the top plate 4 extending out of the mounting middle frame 3 is flush, and dust from the top and the bottom can be shielded by the mounting bottom plate 2 and the mounting top plate 4, so that the dust is prevented from being adhered to the top radiating fin 8, and the heat radiating effect of the top radiating fin 8 is poor.
Furthermore, the heat dissipation assembly 7 further comprises side heat dissipation fins 10 and side heat dissipation plates 11, wherein the side heat dissipation fins 10 are arranged on two sides of the inverted U-shaped structure of the heat dissipation groove in a linear array manner, one end of each side heat dissipation fin 10 extends into the installation middle frame 3, the other ends of the side heat dissipation fins 10, which are located on two sides of the inverted U-shaped structure of the heat dissipation groove, are flush with the parts of the installation bottom plate 2 and the installation top plate 4, which extend out of the installation middle frame 3, the side heat dissipation plates 11 are symmetrically arranged on the ports, which extend into the installation middle frame 3, of the side heat dissipation fins 10 and are connected to the gallium nitride-based chip 5 in an attaching manner, the structural design facilitates the heat generated by the gallium nitride-based chip 5 to be conducted to the side heat dissipation fins 10 distributed in a linear array manner through the side heat dissipation fins 10, and meanwhile, the contact area between the side heat dissipation fins 10 and air flow can be effectively increased in a linear array manner, and the heat dissipation effect can be increased, and the parts of the side radiating fins 10 positioned at the two sides of the inverted U-shaped structure of the radiating groove are flush with the parts of the mounting bottom plate 2 and the mounting top plate 4 extending out of the mounting middle frame 3, so that dust from the top and the bottom can be shielded by the mounting bottom plate 2 and the mounting top plate 4, and the dust is prevented from being adhered to the side radiating fins 10, so that the heat radiating effect of the side radiating fins 10 is poor.
While certain exemplary embodiments of the present invention have been described above by way of illustration only, it will be apparent to those of ordinary skill in the art that the described embodiments may be modified in various different ways without departing from the spirit and scope of the utility model. Accordingly, the drawings and description are illustrative in nature and should not be construed as limiting the scope of the utility model.
Claims (8)
1. A gallium nitride-based power switch device, characterized in that: including packaging shell (1), packaging shell (1) includes mounting plate (2), installation center (3) and installation roof (4), mounting plate (2) with still install between installation roof (4) and be located gallium nitride base chip (5) of installation center (3) center department, be provided with on gallium nitride base chip (5) and extend chip connect pin (6) of installation center (3), mounting plate (2) with installation roof (4) all extend installation center (3), and with form the heat dissipation recess between installation center (3), still be provided with radiator unit (7) that are located the heat dissipation recess on installation center (3).
2. A gallium nitride based power switching device according to claim 1, wherein: the mounting base plate (2) and the mounting top plate (4) extend out of the mounting middle frame (3) and a heat dissipation groove formed between the mounting middle frame (3) is of an inverted U-shaped structure, and the chip connecting pins (6) are located at openings of the inverted U-shaped structure of the heat dissipation groove.
3. A gallium nitride based power switching device according to claim 2, wherein: the heat dissipation assembly (7) comprises a top heat dissipation sheet (8), the top heat dissipation sheet (8) is arranged at the bent opening of the inverted U-shaped structure of the heat dissipation groove in a linear array mode, and one end of the top heat dissipation sheet (8) extends into the installation middle frame (3).
4. A gallium nitride based power switching device according to claim 3, wherein: the heat dissipation assembly (7) further comprises a top heat conduction plate (9), the top heat conduction plate (9) is installed on the port of the top heat dissipation sheet (8) extending to the installation middle frame (3), and the top heat dissipation sheet is attached to the gallium nitride-based chip (5).
5. A gallium nitride based power switching device according to claim 4, wherein: the heat dissipation assembly (7) further comprises side cooling fins (10), the side cooling fins (10) are arranged on two sides of the inverted U-shaped structure of the heat dissipation groove in a linear array mode, and one ends of the side cooling fins (10) extend into the mounting middle frame (3).
6. A gallium nitride based power switching device according to claim 5, wherein: the heat dissipation assembly (7) further comprises side heat conducting plates (11), wherein the side heat conducting plates (11) are symmetrically arranged on ports, extending to the middle mounting frame (3), of the side heat radiating fins (10), and are attached to the gallium nitride-based chip (5).
7. A gallium nitride based power switching device according to claim 3, wherein: the other end of the top radiating fin (8) at the bent position of the inverted U-shaped structure of the radiating groove is flush with the parts of the mounting bottom plate (2) and the mounting top plate (4) extending out of the mounting middle frame (3).
8. A gallium nitride based power switching device according to claim 5, wherein: the other ends of the side radiating fins (10) positioned at two sides of the inverted U-shaped structure of the radiating groove are flush with the parts of the mounting bottom plate (2) and the mounting top plate (4) extending out of the mounting middle frame (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121983738.6U CN215644463U (en) | 2021-08-23 | 2021-08-23 | Gallium nitride-based power switch device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121983738.6U CN215644463U (en) | 2021-08-23 | 2021-08-23 | Gallium nitride-based power switch device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215644463U true CN215644463U (en) | 2022-01-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121983738.6U Active CN215644463U (en) | 2021-08-23 | 2021-08-23 | Gallium nitride-based power switch device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215644463U (en) |
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2021
- 2021-08-23 CN CN202121983738.6U patent/CN215644463U/en active Active
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