CN215578442U - Magnetron microwave source implanted device - Google Patents
Magnetron microwave source implanted device Download PDFInfo
- Publication number
- CN215578442U CN215578442U CN202121205487.9U CN202121205487U CN215578442U CN 215578442 U CN215578442 U CN 215578442U CN 202121205487 U CN202121205487 U CN 202121205487U CN 215578442 U CN215578442 U CN 215578442U
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- Prior art keywords
- tnc
- insulator
- microwave source
- radiation
- radiator
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- 230000005855 radiation Effects 0.000 claims abstract description 36
- 239000012212 insulator Substances 0.000 claims abstract description 34
- 238000002513 implantation Methods 0.000 claims abstract description 17
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical group O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- 229910001369 Brass Inorganic materials 0.000 claims description 4
- 239000010951 brass Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000007789 sealing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012671 ceramic insulating material Substances 0.000 description 1
- 238000012824 chemical production Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000003411 electrode reaction Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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Abstract
The utility model discloses a magnetron microwave source implantation device, which is characterized by comprising: the component comprises a radiation head, a radiator, a radiation cap, an insulator and a TNC shell, wherein the radiation head is arranged at the position below the component, the insulator is arranged at the position above the radiation head, the radiation cap is arranged at the position in the middle of the component and is positioned above the insulator I, the radiator is arranged above the radiation cap, and the TNC shell is arranged above the radiator. The utility model can effectively improve the efficiency of energy conversion between the implanted device and the magnetron, and has simple and stable structure and good vibration efficiency.
Description
Technical Field
The utility model belongs to the technical field of magnetron implantation, and particularly relates to a magnetron microwave source implanted device.
Background
A magnetron, an electric vacuum device for generating microwave energy, is essentially a diode placed in a constant magnetic field and is first marketed in 1939. The microwave technology is an energy-saving and environment-friendly heating technology and is widely applied to a plurality of fields of chemical production, synthesis, food processing, material preparation, food manufacturing and the like. The magnetron is implanted by microwave technology, a cathode electron source in a sealed vacuum tube in the magnetron is arranged in a cylindrical anode, and electrons can be attracted by an electrostatic field to flow to the anode. Stabilizing the magnetic field along the vacuum tube axis causes the electrons to deviate from their radial path, rotating around the cathode, producing oscillations in the microwave frequency. However, most of the existing magnetron microwave source implantation devices have complex structures and poor implantation effects, which can cause unstable oscillation frequency and poor matching between the implantation device and the microwave source magnetron.
Disclosure of Invention
In order to solve the defects of the prior art, the utility model aims to provide an implanted device of a magnetron microwave source, which has a simple and stable structure, can effectively act with a cathode in the magnetron, has a better microwave energy generating effect, and has more stable vibration frequency.
In order to achieve the above object, the present invention adopts the following technical solutions:
an implantable magnetron microwave source device, comprising: constitute the subassembly, constitute the subassembly and include radiation head, radiator, radiation cap, insulator, TNC casing, the radiation head set up in the below position that constitutes the subassembly, the insulator set up in the top position of radiation head, the radiation cap set up in the middle part position that constitutes the subassembly is located the top of insulator, the radiator set up in the top of radiation cap, the TNC casing set up in the top of radiator.
Preferably, the middle position of the component assembly is provided with 4 rows of distributed tetrafluoro sleeves, and the tetrafluoro sleeves are sealing structures.
Still preferably, the radiation head is made of brass H59 with gold plated on its surface, and the radiation cap and the radiator are made of stainless steel 304.
More preferably, the TNC casing is distributed along the coaxial line both sides, be equipped with the TNC contact pin on the outer intermediate position of TNC casing, the radiator top is provided with the TNC insulator, the top of TNC insulator is provided with TNC insulator I.
Further preferably, the magnetron microwave source implantation device is a symmetrical design layout.
Specifically, the insulator is made of zirconia.
The utility model has the advantages that: the microwave source magnetron implanting device has the advantages that the implanting device can be formed by arranging and distributing the radiation head, the insulator, the radiation cap and the radiator from bottom to top, the microwave source magnetron implanting device can effectively achieve implanting work with the microwave source magnetron to generate effective microwave energy, meanwhile, the microwave source magnetron implanting device is simple and reliable in structure, the internal structure of the microwave source magnetron implanting device can be effectively protected by arranging the insulators, the TNC insulator and the TNC insulator I in an excess mode, the sealing property is achieved by the design of the sealing PTFE sleeve, and the microwave source magnetron implanting device is suitable for popularization and application.
Drawings
FIG. 1 is a schematic structural view of the embodiment A-A of the present invention;
FIG. 2 is a schematic view of the internal structure of an embodiment of the present invention;
fig. 3 is an enlarged view of the embodiment of the present invention.
The meaning of the reference symbols in the figures: 1. radiator, 2, coaxial line, 3, insulator, 4, radiation head, 5, tetrafluoro cover, 6, radiation cap, 7, TNC insulator, 8, TNC contact pin, 9, TNC casing, 10, TNC insulator I.
Detailed Description
Embodiments of the present application will be described in detail with reference to the drawings and examples, so that how to implement technical means to solve technical problems and achieve technical effects of the present application can be fully understood and implemented.
Referring to fig. 1 and 2, the magnetron microwave source implantation device of the utility model is characterized by comprising: constitute the subassembly, constitute the subassembly and include, radiation head 4, radiator 1, radiation cap 6, insulator 3, TNC casing 9, radiation head 4 sets up in the below position that constitutes the subassembly, insulator 3 sets up in the top position of radiation head 4, radiation cap 6 sets up in the middle part position that constitutes the subassembly, be located the top of insulator 3, radiator 1 sets up in the top of radiation cap 6, TNC casing 9 sets up in the top of radiator 1, through with radiation head 4, radiation cap 6, radiator 1 distributes from bottom to top and sets up, the neotype equipment of cost experiment can effectively be accomplished, the radiator combination that this kind of overall arrangement set up can be effectual realizes the implantation to microwave source magnetron, thereby act on, and the microwave energy high frequency that produces is more stable.
Referring to fig. 3, the tetrafluoro sleeves 5 distributed in 4 rows are arranged at the middle position of the component assembly, the tetrafluoro sleeves 5 are sealing structures, and the tetrafluoro sleeves 5 arranged in a sealing mode can be suitable for working conditions of high temperature resistance, high pressure resistance and corrosion resistance, and have low friction coefficient, good sealing performance and economy and durability.
The radiation head 4 is made of brass H59 with gold-plated surface, the radiation cap 6 and the radiator 1 are made of stainless steel 304, the brass H59 with gold-plated surface can bear pressure processing well in a thermal state, and has good tensile strength, the stainless steel 304 is wide in available range and low in price.
The TNC shell 9 is distributed along two sides of the coaxial line 2, a TNC contact pin 8 is arranged in the middle of the TNC shell 9, a TNC insulator 7 is arranged above the radiator 1, a TNC insulator I10 is arranged above the TNC insulator 7, the application frequency range of the TNC contact pin 8 is wider and ranges from 0 GHz to 11GHz, meanwhile, the connection is reliable, the vibration resistance is good, the connection and the separation are convenient, the TNC insulator 7 and the TNC insulator I10 can be suitable for occasions where connection and separation are frequent, electrical insulation and high voltage resistance can be well achieved, and therefore the internal structure cannot be damaged due to electrode reaction.
The magnetron microwave source implanted device is in a symmetrical design layout, and the design of the symmetrical layout can more effectively and conveniently realize the stable implantation of the magnetron of the microwave source, the implantation range and the implantation effect are better, and no residual space is generated.
The insulator 3 is made of zirconia, and the zirconia has the properties of high melting point, high resistivity and low thermal expansion coefficient, can be used as an important high-temperature-resistant ceramic insulating material and can be suitable for the insulator 3.
The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It should be understood by those skilled in the art that the above embodiments do not limit the present invention in any way, and all technical solutions obtained by using equivalent alternatives or equivalent variations fall within the scope of the present invention.
Claims (6)
1. An implantable magnetron microwave source device, comprising:
constitute the subassembly, constitute the subassembly and include radiation head, radiator, radiation cap, insulator, TNC casing, the radiation head set up in the below position that constitutes the subassembly, the insulator set up in the top position of radiation head, the radiation cap set up in the middle part position that constitutes the subassembly is located the top of insulator, the radiator set up in the top of radiation cap, the TNC casing set up in the top of radiator.
2. The magnetron microwave source implantation device according to claim 1, wherein the middle position of the component assembly is provided with 4 columns of distributed tetrafluoro sleeves, and the tetrafluoro sleeves are sealed structures.
3. The magnetron microwave source implantation device according to claim 1, wherein the material adopted by said radiation head is brass H59 with gold-plated surface, and the material adopted by said radiation cap and said radiator is stainless steel 304.
4. The magnetron microwave source implantation device according to claim 1, wherein the TNC shells are distributed along two sides of a coaxial line, a TNC pin is arranged in the middle outside the TNC shells, a TNC insulator is arranged above the radiator, and a TNC insulator i is arranged above the TNC insulator.
5. The magnetron microwave source implantation device according to claim 1, wherein the magnetron microwave source implantation device is a symmetrical design layout.
6. The magnetron microwave source implantation device according to claim 1, wherein the material of the insulator is zirconia.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121205487.9U CN215578442U (en) | 2021-11-08 | 2021-11-08 | Magnetron microwave source implanted device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121205487.9U CN215578442U (en) | 2021-11-08 | 2021-11-08 | Magnetron microwave source implanted device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215578442U true CN215578442U (en) | 2022-01-18 |
Family
ID=79865323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121205487.9U Expired - Fee Related CN215578442U (en) | 2021-11-08 | 2021-11-08 | Magnetron microwave source implanted device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215578442U (en) |
-
2021
- 2021-11-08 CN CN202121205487.9U patent/CN215578442U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20220118 |