CN104934280B - External gate-controlled cold cathode array electron gun - Google Patents
External gate-controlled cold cathode array electron gun Download PDFInfo
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- CN104934280B CN104934280B CN201510273208.5A CN201510273208A CN104934280B CN 104934280 B CN104934280 B CN 104934280B CN 201510273208 A CN201510273208 A CN 201510273208A CN 104934280 B CN104934280 B CN 104934280B
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Abstract
The invention discloses an external gate-controlled cold cathode array electron gun. The problems in the prior art such as poor accuracy, poor pressure resistance of devices, poor stability and complex process are solved. The external grid-controlled cold cathode array electron gun comprises a cathode base, a cathode substrate fixed to the cathode base, a cold cathode emission unit array arranged on the upper end face of the cathode substrate and having a slot, and an electron gun shell of which the upper end part is open and the lower end is connected to the cathode base and sealed. The inside of the electron gun shell is hollow. The electron gun shell is composed of a lower sleeve and an upper sleeve, a gate fixing lower base with a through hole in the middle is arranged between the lower sleeve and the upper sleeve, an external gate is mounted on the gate fixing lower base, and a gate fixing upper base is arranged on the external gate. The external gate can move up and down relative to the electron gun shell so that the distance between the external gate and the cathode substrate can be adjusted. The external gate-controlled cold cathode array electron gun of the invention has the advantages of simple manufacturing process, high precision, good consistency, and the like.
Description
Technical field
The present invention relates to a kind of field emission external grid-control cold cathode array electronic rifle, belongs to vacuum electronics technology neck
Domain, in the device for vacuum electronic radiation source device or generation high current.
Background technology
Field Electron Emission is and a kind of thermionic emission diverse electron emission form in nature.Thermoelectron is sent out
It is temperature by rising high object to penetrate, and the energy for giving the electronics of interior of articles to add enables some high energy electrons to cross thing
Potential barrier on body surface face and escape, the current density highest that thermionic emission can be provided only hundreds of A/ ㎝2, and also one
The sluggishness of section time；Even if METAL HEATING PROCESS to the high temperature that significantly evaporation occurs, the electron number that can be escaped also only accounts for metal
The small part of middle free electron sum, there is provided consume in thermal-radiating form to the heat energy overwhelming majority of negative electrode, it is this
The dissipation of heat is returned and all brings many troubles using the electronic device and whole instrument and equipment of hot cathode.Field Electron Emission
Principle is different, and it need not simultaneously supply electronics in solid with extra energy, but constrain thing by very strong external electrical field
The potential barrier in body surface face, makes the height reduction of potential barrier and makes the narrowed width of potential barrier.Thus, a large amount of electronics in object just can be penetrated
Cross surface potential barrier and escape, field-emissive cathode can provide 107A/㎝2Current density above, the time without transmitting is slow
It is stagnant.So, cold cathode is due to electronic transmitting efficiency height, and controllability is strong, and response is fast and can realize that large area electron transmitting etc. is excellent
Point, there is important application prospect on vacuum microelectronic device.
Disclose in the patent document of Publication No. CN 102709133A《A kind of cold cathode with embedded electrode
Electron source array and preparation method thereof and application》, the cold cathode etches the quarter with cathode electrode bar pattern on its substrate
Erosion groove；Then cathode electrode bar is made on etching groove；Then the depositing insulating layer film on cathode electrode bar；Then in insulation
The gate electrode bar vertical with cathode electrode bar is made on layer film；Then insulating layer of thin-film is performed etching；Expose negative electrode electricity
Pole bar；Then growth source film is made in local area-specific；Finally substrate is aoxidized, that is, is obtained using nano wire as negative electrode material
The electron source array with embedded electrode structure of material.The manufacturing process of the patented technology is sufficiently complex, meanwhile, also relate to
Various processing technologys such as plasma etching, chemical vapor deposition, magnetron sputtering, electron beam evaporation；Due to the embedded electrode
Cold-cathode electron source array in micron dimension, size is very little, and electron source array will certainly be made under this complicated technique
Uniformity into cold cathode emission unit and grid is poor, and yields is low, and its single transmitter unit goes wrong, then can cause
The multiple or even overall cold cathode emission unit of surrounding cannot produce electric current or emission current is uneven.On the other hand, grid exists
Also easily cause uneven in making and be mixed into impurity, cause the emission current of local excessive on the net to cause electronics to get to Gate,
Local pyrexia so that device is easily damaged, affects the service life of cold-cathode electron source array.
Further, because above-mentioned patented technology make be a kind of cold-cathode electron source array of embedded electrode, in order to
Grid and cold cathode short circuit are avoided, therefore specific dielectric is added between grid and cold cathode.However, just because of plus
Specific dielectric is entered, its medium is relatively thin, in micron dimension so as to metal fillings or miscellaneous is easily mixed in manufacture craft
, there is electric current in matter, cause spark phenomenon so as to cause dielectric surface, damage device, affect the work of device.Simultaneously as field
Cause to launch relevant with surface field intensity, in theory the higher the better for electric-field intensity, therefore, have high to the compressive resistance of device
Require, but in its structure medium introducing, the resistance to pressure of device is significantly reduced on the contrary, and big electric current cannot be produced.
Therefore, this cold-cathode electron source array with embedded electrode is not suitable for electrovacuum radiation source device or needs
In wanting the device of high current.
The content of the invention
It is an object of the invention to overcome drawbacks described above, there is provided a kind of simple structure, long service life, outside function admirable
Put formula grid-control cold cathode array electronic rifle.
To achieve these goals, the technical solution used in the present invention is as follows：
A kind of external grid-control cold cathode array electronic rifle, including cathode substructure, the moon being fixed on the cathode substructure
Pole substrate, is arranged at the cathode substrate upper surface and has slotted cold cathode emission cell array, and upper end be opening,
The electron gun shell that bottom is connected with the cathode substructure and seals；The electron gun enclosure is vacuum；Wherein, electronics
Rifle shell upper end open by design is easy to be linked on note ripple interaction chamber or other devices and obtains broader applications；Adopt
Replace traditional dielectric with vacuum environment, drastically increase the voltage endurance of device, so that the performance of field emission
More preferably, it is in hgher efficiency；Cathode substrate is cylindrical stainless steel；Cathode substructure is processed by oxygen-free copper or stainless steel material, its knot
Structure is not particularly limited；
Further, the electron gun shell is made up of lower sleeve and upper bush, between the lower sleeve and upper bush
The grid that being provided with middle part has through hole fixes lower bottom base, fixes on lower bottom base in the grid and is provided with external grid, in institute
State and grid fixation upper bed-plate is provided with external grid.The method that two kinds of regulation Cathode-grid distances are included in the present invention：1st, lead to
Cross and make the substrate of differing heights to adjust the distance between cold cathode surface and grid；2nd, external grid and negative electrode lining are adjusted
The distance between bottom.
Wherein, lower sleeve and upper bush are according to required grid and the distance of cold cathode emission cell array, the height of the two
Adjustable, when above-mentioned in larger distance, then lower sleeve is higher, conversely, lower sleeve is relatively low；External grid is by by oxygen-free copper or not
The grid that rust Steel material is processed fixes upper bed-plate and grid is fixed lower bottom base and fixed, and based on the setting of external grid, leads to
The result of the analog simulation of early stage is crossed, arbitrarily emission of cathode unit of different shapes hole shape can be exported into corresponding electronics
Grid and distance between the two are matched, and so as to improve device stability at work, also improve work effect
Rate.Grid is fixed upper bed-plate and can be played and be focused the electronics for emitting note as modulating anode, therefore according to difference
The electronics note launched of cloudy grid structure, different shapes and structure can be made into, focus on well effect to reach
Really.Further, specific magnetic field is added in electron gun, electronics note convergence effect can be made more excellent, when only grid is fixed
When upper bed-plate (i.e. modulating anode), electronics note convergence can be compressed to several times, but add after specific magnetic fields, then can be compressed to
More than ten times to tens times.
Further, the cold cathode emission cell array is cylinder or polygon, and it is highly 0.1mm～2mm.
Further, the cold cathode emission cell array is by LIGA (photoetching electroforming is molded combined process) or wire cutting
Technique cuts out.By above-mentioned setting, required variously-shaped cold cathode emission unit can be obtained, and with good
Scale and uniformity.
Further, the cold-cathode material of nano material is provided with the cold cathode emission cell array.To cold the moon
Pole transmitter unit array carries out thermal oxide, you can to obtain nano material as the emission of cathode cell array of cold-cathode material.
Further, the distance at the cutting of the cathode substrate to external grid is more than cold cathode emission cell array
Distance of the surface to external grid.Because the distance at the cathode array cutting to grid arrives grid more than electron source array
Distance, therefore the field intensity of generation of the grid at cutting is insufficient to allow it to launch electronics, therefore dielectric need not be filled,
This as replaces the optimized integration of dielectric using vacuum environment.Disruptive field intensity in a vacuum can reach 1.3 × 108V/
M, much larger than the resistance to pressure of traditional sucrose.
Further, the external grid is rounded and middle part is provided with some mesh, and all mesh constitute circle,
Multiple installing holes are offered in the outer edge of the external grid；The mesh is electronics delivery outlet, and it is shaped as circular hole
Or polygonal hole.
Further, in the cold cathode emission cell array in the central and external grid of each transmitter unit
Central authorities' one-to-one corresponding of each electronics delivery outlet.Further, the external gate electron delivery outlet passes through laser ablation work
Skill is etched.By above-mentioned setting, the size and spacing of array electronic delivery outlet are adjustable on gate slice, increase correspondence difference
The cold cathode emission unit of shape launches the percent of pass of electronics, specifically, make electronics to the percent of pass of grid in theory
(in the middle of emulation) can reach 100%.
Further, lug boss is provided with the cathode substructure, the cathode substrate bottom is arranged and the lug boss
The depressed part of matching, the cathode substrate is fixed on the cathode substructure by the cooperation of lug boss and depressed part.By upper
Setting is stated, the grid that can prepare differing heights fixes lower bottom base to adjust the distance between grid and cold cathode surface.Negative electrode
Between base and cathode substrate be connected mode it is also an option that other common fixed forms, such as screw fix, clamping,
Snapping etc..
Compared with prior art, the invention has the advantages that：
(1) present invention has and makes upper process is simple, high precision, the advantages of uniformity is good, improves part work in-process
Yields.
(2) grid is independent external in the present invention, by the result of the analog simulation of early stage, can arbitrarily by difference
The emission of cathode unit of shape is matched with the grid and distance between the two of corresponding output hole shape, so as to improve
Device stability at work, increases electronics percent of pass, in emulation experiment, can reach 100% percent of pass.
(3) which thereby enhance due to substituting general Filled Dielectrics with vacuum between negative electrode and grid in the present invention
The voltage endurance of device, so that the performance of field emission is more preferably, it is in hgher efficiency.
(4) specific magnetic field is added in electron gun in the present invention, thus further increases electronics convergence effect, than
When only grid fixes upper bed-plate (i.e. modulating anode), electronics note convergence can be compressed to several times, after adding specific magnetic fields, then
More than ten times to tens times can be compressed to.
Description of the drawings
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the Making programme figure of cold cathode emission unit in cold-cathode electron source array.
Fig. 3 is the structure chart of external grid.
Fig. 4 is the distribution schematic diagram that magnetic field added by the present invention changes with element height.
Corresponding reference title is as follows in accompanying drawing：
1- cathode substructures, 2- cathode substrates, 3- grids fix lower bottom base, 4- external grids, 5- cold cathode emission units
Array, 6- grids fix upper bed-plate, 7-1- lower sleeves, 7-2- upper bushes, 8- nanometer cold cathodes.
Specific embodiment
With reference to the accompanying drawings and examples the invention will be further described, and embodiments of the present invention are included but is not limited to
The following example.
Embodiment
As shown in Figures 1 to 4, a kind of external grid-control cold cathode array electronic rifle is present embodiments provided, it mainly includes
The parts such as cathode substructure 1, cathode substrate 2, cold cathode emission cell array 5, electron gun shell, external grid 4；The electron gun
Cathode electronics source array can on request make various different sizes, without Filled Dielectrics (be vacuum environment) in structure, and negative electrode
Controllable with the distance between grid, negative electrode produces uniform high current and can be compressed into the electronics note of high current density, can
Electronics note source is provided for electron tube, effectively expands the purposes such as range of application.The preparation method of external grid is as follows：First
Certain thickness stainless steel metal section is processed, by laser ablation, the polygon or circle of one group of certain size is opened up
Column mesh, as electronics delivery outlet；The material of external grid can be chromium, titanium, tungsten, gold, molybdenum or niobium in one or more,
And the metal such as stainless steel, gate slice thickness is 0.01mm to 0.5mm, and the electronics for being etched with laser etching process thereon is exported
The shape in hole can be circular (radius is 0.02mm to 1mm) or square (length of side is 0.02mm to 1mm) and other polygon
Shape (length of side is 0.02mm to 1mm) etc., the present invention is not especially limited to this.
Below so that cold-cathode electron source array transmitter unit and grid mesh are square as an example：
Cathode substructure is made up of stainless steel metal, and its size is as follows：Go to the bottom a diameter of Φ 20mm, highly for 2mm, upper bottom is straight
Footpath is Φ 4mm, is highly 2mm；It is shaped as two grades of stepped cylindrical；Lower sleeve 7-1 in electron gun shell is made by 99# ceramics
Into its size is as follows：Internal diameter is Φ 16mm, external diameter Φ 19mm, is highly 4.8mm.
Lower sleeve lower end is connected with cathode substructure and seals, meanwhile, lower sleeve upper end is Φ 11mm, external diameter Φ with internal diameter
20mm, highly be 1mm, material for stainless steel metal grid fix lower bottom base 3 be connected and seal；Then by a diameter of Φ 8mm,
Highly it is 5.5mm, material is the cathode substrate 2 of stainless steel metal, and is punched in the lower end of the cathode substrate 2, and the size in hole is such as
Under：A diameter of Φ 4mm, depth are 2mm, the hole is consolidated with guarantee cathode substrate 2 is merged with the upper end of cathode substructure 1
It is scheduled on cathode substructure 1.
As shown in Fig. 2 it is 0.4mm that the upper end of cathode substrate 2 cuts out the length of side with wire cutting method in advance, groove depth is
0.5mm, well width is the cold cathode emission cell array 5 of 0.2mm, then carries out thermal oxide to cold cathode emission cell array 5,
Obtain the emission of cathode cell array using CNT 8 as cold-cathode material.
Fig. 3 is the structural representation of external Gate poles 4, in a diameter of Φ 14mm, highly for 0.1mm stainless steel metal piece
On by laser etching techniques etch the length of side be 0.5mm squared mesh, spacing be 0.1mm (i.e. Gate polar nets silk width),
The round diameter Φ 10mm that mesh is surrounded, and as electronics delivery outlet.Offer in the outer edge of external grid multiple
The screw fixed hole of diameter of phi 0.8mm, external grid is used to fix upper bed-plate with grid by these fixing holes and grid is solid
Base connection is fixed, it is specific as follows：First, external grid is assembled to grid and fixes on lower bottom base and be screwed so that
The distance between the lower surface of external grid 4 and the surface of cold cathode emission cell array 5 are 0.3mm, are Φ by internal diameter then
12mm, external diameter Φ 14mm, highly be 13mm, material for stainless steel metal grid upper bed-plate 6 (i.e. modulating anode) pass through screw
Be fixed on external grid, finally, by internal diameter be Φ 16mm, external diameter Φ 19mm, highly for 21.1mm, material be 99# it is ceramic
Lower end and the grid of upper bush 7-2 fix lower bottom base 3 and seal, while the upper end of upper bush and anode seal.Above-mentioned assembling is complete
Cheng Hou, makes whole electron gun form vacuum chamber by vacuum exhaust platform, and vacuum can reach 10-5It is more than handkerchief.
In the implementation case, voltage is 0V in cold cathode emission cell array 5, and voltage is 3KV on grid 4, on anode
Voltage is 15KV.And in electron gun, with the height change of electron gun different size of magnetic field, its distribution map such as Fig. 4 institutes are added
Show, transverse axis coordinate is element height (size is millimeter mm), ordinate of orthogonal axes is magnetic field added by device (size is tesla T).It is logical
The analog simulation of software is crossed, the mesh that electronics is all netted by Gate is emitted, and (i.e. grid fixes upper bottom by modulating anode
6) seat have compressed well.Cathode emissive area is 50mm2Electronics note through compression obtain export electronics note sectional area
Only 4.5mm2, electronics note sectional area compression ratio is 11 times, and beam current is 0.49A.
According to above-described embodiment, the present invention just can be well realized.What deserves to be explained is, before above-mentioned design principle
Put, be to solve same technical problem, even if some made on architecture basics disclosed in this invention are without substantial
Change or polish, the essence of the technical scheme for being adopted is still as the present invention, therefore it should also be as the protection model in the present invention
In enclosing.
Claims (9)
1. a kind of external grid-control cold cathode array electronic rifle, it is characterised in that including cathode substructure (1), be fixed on described the moon
Cathode substrate (2) on pole base (1), is arranged at the cathode substrate (2) upper surface and has slotted cold cathode emission unit
Array (5), and upper end is the electron gun shell that opening, bottom are connected and seal with the cathode substructure (1), the electricity
Sub- rifle enclosure is vacuum；
The electron gun shell is made up of lower sleeve (7-1) and upper bush (7-2), in the lower sleeve (7-1) and upper bush (7-
2) grid that middle part is provided between through hole fixes lower bottom base (3), is provided with grid fixation lower bottom base (3) external
Formula grid (4), grid is provided with the external grid (4) and fixes upper bed-plate (6), the upper end of the upper bush (7-2)
With the interaction chamber sealing of note ripple；The external grid (4) is adjustable with the distance between the cathode substrate (2).
2. a kind of external grid-control cold cathode array electronic rifle according to claim 1, it is characterised in that the cold cathode
Transmitter unit array (5) is cylinder or polygon, and it is highly 0.1mm～2mm.
3. a kind of external grid-control cold cathode array electronic rifle according to claim 2, it is characterised in that the cold cathode
Transmitter unit array (5) is molded combined process by photoetching electroforming or wire cutting technology cuts out.
4. a kind of external grid-control cold cathode array electronic rifle according to claim 3, it is characterised in that in described cold the moon
The cold-cathode material of promising nano material is set on pole transmitter unit array (5).
5. a kind of external grid-control cold cathode array electronic rifle according to Claims 1-4 any one, its feature exists
In, at the cutting of the cathode substrate (2) to external grid (4) distance more than cold cathode emission cell array (5) to outer
Put the distance of formula grid (4).
6. a kind of external grid-control cold cathode array electronic rifle according to claim 1, it is characterised in that the external
Grid (4) is rounded and middle part is provided with some mesh, and all mesh constitute circle, in the outer of the external grid (4)
Edge offers multiple installing holes；The mesh is electronics delivery outlet, and it is shaped as circular hole or polygonal hole.
7. a kind of external grid-control cold cathode array electronic rifle according to claim 6, it is characterised in that the cold cathode
In transmitter unit array (5) in the central and external grid (4) of each transmitter unit each electronics delivery outlet central authorities
Correspond.
8. a kind of external grid-control cold cathode array electronic rifle according to claim 7, it is characterised in that the external
The electronics delivery outlet of grid (4) is etched by laser etching process.
9. a kind of external grid-control cold cathode array electronic rifle according to claim 1, it is characterised in that the cathode bottom
Lug boss is provided with seat (1), cathode substrate (2) bottom arranges the depressed part matched with the lug boss, the negative electrode
Substrate (2) is fixed on the cathode substructure (1) by the cooperation of lug boss and depressed part.
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| CN201510273208.5A CN104934280B (en) | 2015-05-26 | 2015-05-26 | External gate-controlled cold cathode array electron gun |
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| CN201510273208.5A CN104934280B (en) | 2015-05-26 | 2015-05-26 | External gate-controlled cold cathode array electron gun |
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| CN104934280B true CN104934280B (en) | 2017-05-10 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109065428B (en) * | 2018-08-16 | 2020-10-09 | 电子科技大学 | Double-gate control type cold cathode electron gun and preparation method thereof |
| CN110783158B (en) * | 2019-11-05 | 2022-06-14 | 合肥工业大学 | Small-sized low-energy grid-control cold cathode electron gun |
| CN112103155B (en) * | 2020-09-22 | 2023-11-21 | 成都创元电子有限公司 | Electron bombardment type lanthanum hexaboride cathode |
| CN114883163B (en) * | 2022-07-05 | 2022-09-27 | 北京大学 | Transmission type semiconductor photocathode with high quantum efficiency and low intrinsic emittance and method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1379433A (en) * | 2002-05-16 | 2002-11-13 | 中山大学 | Cold-cathode electronic gun |
| CN102064063A (en) * | 2010-12-24 | 2011-05-18 | 清华大学 | Field-emission cathode device and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2907150B2 (en) * | 1996-09-27 | 1999-06-21 | 日本電気株式会社 | Cold cathode electron gun and electron beam device using the same |
| JP3011127B2 (en) * | 1997-03-27 | 2000-02-21 | 日本電気株式会社 | Cold cathode electron gun and microwave tube for microwave tube |
| JP3107036B2 (en) * | 1998-03-20 | 2000-11-06 | 日本電気株式会社 | Electron gun for cold cathode mounted electron tube |
| CN101452797B (en) * | 2007-12-05 | 2011-11-09 | 清华大学 | Field emission type electronic source and manufacturing method thereof |
| CN102074441B (en) * | 2010-12-22 | 2012-11-21 | 清华大学 | Field-emission cathode device and field-emission display |
| ITTO20120993A1 (en) * | 2011-11-25 | 2013-05-26 | Selex Sistemi Integrati Spa | COLD CATODO DEVICE ELECTRONICS EMITTER |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1379433A (en) * | 2002-05-16 | 2002-11-13 | 中山大学 | Cold-cathode electronic gun |
| CN102064063A (en) * | 2010-12-24 | 2011-05-18 | 清华大学 | Field-emission cathode device and preparation method thereof |
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