CN215577995U - High frequency magnetic element suitable for wide bandgap semiconductor circuit - Google Patents
High frequency magnetic element suitable for wide bandgap semiconductor circuit Download PDFInfo
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- CN215577995U CN215577995U CN202121781791.8U CN202121781791U CN215577995U CN 215577995 U CN215577995 U CN 215577995U CN 202121781791 U CN202121781791 U CN 202121781791U CN 215577995 U CN215577995 U CN 215577995U
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Abstract
The utility model discloses a high-frequency magnetic element suitable for a wide-bandgap semiconductor circuit, which comprises: the first magnet is in a ring shape, the surface of the upper end of the first magnet is provided with a first groove which is sunken from the upper end to the lower end, and the surface of the lower end of the first magnet is provided with a second groove which is sunken from the lower end to the upper end; the second magnet is in a circular ring shape and is embedded in the first groove; a third magnet having a ring shape and embedded in the second groove; a first elastic body having a ring shape and connected to an upper end surface of the second magnet; and a second elastic body having a ring shape and interconnected with a lower end surface of the third magnet. The utility model has the beneficial effects that: can realize reducing design size through changing second magnet and third magnet, the cost rises width of a big simultaneously, simple structure, longe-lived advantage.
Description
Technical Field
The utility model relates to the technical field of high-frequency magnetic elements suitable for wide-bandgap semiconductor circuits.
Background
The material of the common magnetic core is different from the material of the special magnetic core suitable for the wide bandgap semiconductor circuit, the special magnetic core suitable for the wide bandgap semiconductor circuit has better effect, can achieve smaller volume, but has higher cost. When a plurality of civil products are manufactured, the size is not required to be minimized, but the cost is more sensitive, so that the cost cannot be greatly increased on the basis of reducing the size.
SUMMERY OF THE UTILITY MODEL
The present invention is to overcome the defects of the prior art, and provide a high frequency magnetic element suitable for a wide bandgap semiconductor circuit, which can realize the reduction of the design size by replacing the second magnet and the third magnet, and has the advantages of small cost increase, simple structure and long service life.
The technical scheme adopted by the utility model is as follows:
a high frequency magnetic element suitable for use in a wide bandgap semiconductor circuit, comprising:
the first magnet is in a ring shape, the surface of the upper end of the first magnet is provided with a first groove which is sunken from the upper end to the lower end, and the surface of the lower end of the first magnet is provided with a second groove which is sunken from the lower end to the upper end;
the second magnet is in a circular ring shape and is embedded in the first groove;
and a third magnet having a ring shape and embedded inside the second groove.
The cross sections of the first groove and the second groove are both trapezoidal.
The second magnet and the cross section of the second magnet are both trapezoidal.
The circumferential side surface of the second magnet is in close contact with the side surface of the first groove, and the lower end surface of the second magnet is in close contact with the lower end surface of the first groove; the circumferential side surface of the third magnet is in close contact with the side surface of the second groove, and the upper end surface of the third magnet is in close contact with the upper end surface of the second groove.
The upper end face of the first magnet is matched with the upper end face of the second magnet to form an upper shared plane, and the lower end face of the first magnet is matched with the lower end face of the third magnet to form a lower shared plane.
The first magnet, the second magnet and the third magnet are chamfered at the contact position with the winding copper wire, so that the damage of the copper wire caused by sharp corners of the magnets is avoided.
As an alternative technical point: the high-frequency magnetic element suitable for the wide-bandgap semiconductor circuit further comprises a first elastic body and a second elastic body.
As an alternative technical point: the first elastic body is connected with the second magnet through glue, and the second elastic body is connected with the third magnet through glue.
If the customer has high requirements on the cost, the second magnet and the third magnet are made of conventional magnetic core materials, and if the customer has high requirements on the small size and the cost is not so high, the second magnet and the third magnet are made of materials which are specially used for the magnetic core of the wide-bandgap semiconductor circuit. Meanwhile, the cross sections of the first groove and the second groove are trapezoidal, so that the second magnet and the third magnet are more conveniently placed in the grooves, and the contact is tighter. Since the second magnet and the third magnet are pressed by the copper wire after winding the coil, it is possible to achieve pressing of the second magnet against the first magnet and pressing of the third magnet against the first magnet.
The utility model has the beneficial effects that: can realize reducing design size through changing second magnet and third magnet, the cost rises width of a big simultaneously, simple structure, longe-lived advantage.
Drawings
FIG. 1 is a schematic view of the first magnet according to the present invention;
FIG. 2 is a schematic view of the first embodiment of the present invention;
FIG. 3 is a schematic diagram of the first magnet of the present invention;
FIG. 4 is a schematic view of the second principle of the present invention between the first magnet and the second magnet;
FIG. 5 is a schematic view of the elastomer-containing structure of the present invention.
Detailed Description
As shown in fig. 1, 2, 3, 4 and 5, the high frequency magnetic element of the present invention, which is applied to a wide bandgap semiconductor circuit, includes:
a first magnet 1 having a ring shape, the upper surface of which is provided with a first groove 11 recessed from the upper end toward the lower end, and the lower surface of which is provided with a second groove 12 recessed from the lower end toward the upper end;
a second magnet 2 having a ring shape and embedded in the first groove 11;
a third magnet 3 having a ring shape and embedded in the second groove 12;
a first elastic body 4 having a ring shape and interconnected with an upper end surface of the second magnet 2;
and a second elastic body 5 having a ring shape and interconnected with a lower end surface of the third magnet 3.
The cross sections of the first groove 11 and the second groove 12 are trapezoidal.
The second magnet 2 and the second magnet 2 are each trapezoidal in cross section.
The circumferential side surface of the second magnet 2 is in close contact with the side surface of the first groove 11, and the lower end surface of the second magnet 2 is in close contact with the lower end surface of the first groove 11; the circumferential side surface of the third magnet 3 is in close contact with the side surface of the second groove 12, and the upper end surface of the third magnet 3 is in close contact with the upper end surface of the second groove 12.
The upper end face of the first magnet 1 is matched with the upper end face of the second magnet 2 to form an upper shared plane, and the lower end face of the first magnet 1 is matched with the lower end face of the third magnet 3 to form a lower shared plane.
The first magnet, the second magnet and the third magnet are chamfered at the contact position with the winding copper wire, so that the damage of the copper wire caused by sharp corners of the magnets is avoided.
As an alternative technical point: the high-frequency magnetic element suitable for the wide-bandgap semiconductor circuit further comprises a first elastic body and a second elastic body.
As an alternative technical point: the first elastic body 4 is connected with the second magnet 2 through glue, and the second elastic body 5 is connected with the third magnet 3 through glue.
If the customer has a high requirement on the cost, the second magnet 2 and the third magnet 3 are made of conventional magnetic core materials, and if the customer has a high requirement on the small size and the cost is not so high, the second magnet 2 and the third magnet 3 are made of materials special for the magnetic core of the wide-bandgap semiconductor circuit. Meanwhile, the cross sections of the first groove 11 and the second groove 12 are trapezoidal, so that the second magnet 2 and the third magnet 3 are more conveniently placed in the grooves and the contact is tighter. Since the second magnet and the third magnet are pressed by the copper wire after winding the coil, it is possible to achieve pressing of the second magnet 2 against the first magnet 1 and pressing of the third magnet 3 against the first magnet 1.
The utility model has the beneficial effects that: can realize reducing design size through changing second magnet 2 and third magnet 3, the cost rises a little simultaneously, simple structure, longe-lived advantage.
Claims (6)
1. A high frequency magnetic element suitable for use in a wide bandgap semiconductor circuit, comprising:
the first magnet is in a ring shape, the surface of the upper end of the first magnet is provided with a first groove which is sunken from the upper end to the lower end, and the surface of the lower end of the first magnet is provided with a second groove which is sunken from the lower end to the upper end;
the second magnet is in a circular ring shape and is embedded in the first groove;
and a third magnet having a ring shape and embedded inside the second groove.
2. The high-frequency magnetic element suitable for a wide bandgap semiconductor circuit as claimed in claim 1, wherein: the cross sections of the first groove and the second groove are both trapezoidal.
3. The high-frequency magnetic element suitable for a wide bandgap semiconductor circuit as claimed in claim 2, wherein: the second magnet and the cross section of the second magnet are both trapezoidal.
4. A high-frequency magnetic element suitable for a wide bandgap semiconductor circuit as claimed in claim 3, wherein: the circumferential side surface of the second magnet is in close contact with the side surface of the first groove, and the lower end surface of the second magnet is in close contact with the lower end surface of the first groove; the circumferential side surface of the third magnet is in close contact with the side surface of the second groove, and the upper end surface of the third magnet is in close contact with the upper end surface of the second groove.
5. The high-frequency magnetic element suitable for a wide bandgap semiconductor circuit as claimed in claim 4, wherein: the upper end face of the first magnet is matched with the upper end face of the second magnet to form an upper shared plane, and the lower end face of the first magnet is matched with the lower end face of the third magnet to form a lower shared plane.
6. The high-frequency magnetic element suitable for a wide bandgap semiconductor circuit as claimed in claim 5, wherein: the high-frequency magnetic element suitable for the wide-bandgap semiconductor circuit also comprises a first elastic body and a second elastic body; a first elastic body having a ring shape and connected to an upper end surface of the second magnet; a second elastic body having a ring shape and connected to a lower end surface of the third magnet; the first elastic body is connected with the second magnet through glue, and the second elastic body is connected with the third magnet through glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121781791.8U CN215577995U (en) | 2021-08-02 | 2021-08-02 | High frequency magnetic element suitable for wide bandgap semiconductor circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121781791.8U CN215577995U (en) | 2021-08-02 | 2021-08-02 | High frequency magnetic element suitable for wide bandgap semiconductor circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215577995U true CN215577995U (en) | 2022-01-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121781791.8U Active CN215577995U (en) | 2021-08-02 | 2021-08-02 | High frequency magnetic element suitable for wide bandgap semiconductor circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215577995U (en) |
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2021
- 2021-08-02 CN CN202121781791.8U patent/CN215577995U/en active Active
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