CN215527729U - 功率器件 - Google Patents

功率器件 Download PDF

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CN215527729U
CN215527729U CN202120961884.2U CN202120961884U CN215527729U CN 215527729 U CN215527729 U CN 215527729U CN 202120961884 U CN202120961884 U CN 202120961884U CN 215527729 U CN215527729 U CN 215527729U
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细谷拓己
稻永浩道
三好诚二
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Semiconductor Components Industries LLC
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Abstract

本实用新型公开了一种功率器件，该功率器件包括：衬底，所述衬底具有第一区域和第二区域；开关，所述开关设置在所述衬底的所述第一区域中；二极管，所述二极管在所述衬底的所述第二区域中形成；第一金属电极和第二金属电极，所述第一金属电极形成在所述衬底的第一表面，所述第二金属电极形成在所述衬底的第二表面；注入掩模，在所述第一金属电极上形成；以及设置在所述衬底的所述第二区域中的区，所述区具有注入到所述第二区域中以控制电荷载流子的寿命的杂质。

Description

功率器件
本申请是申请日为2020年8月11日、申请号为202021652681.7、实用新型名称为“功率器件”的实用新型专利申请的分案申请。
技术领域
本公开涉及功率器件，具体涉及功率半导体器件，该功率半导体器件具有集成在单片衬底中的开关和二极管。
背景技术
功率半导体器件用于许多不同的行业。这些行业中的一些行业，诸如电信、计算和收费系统，正在迅速地发展。这些行业将受益于改进的半导体器件特性，包括可靠性、开关速度和小型化。
功率半导体器件(例如绝缘栅双极晶体管(IGBT))常被用作开关。功率转换系统中使用的电感器产生感应电动势，该感应电动势在IGBT关闭时对抗电流的变化。续流二极管可以反并联地连接到IGBT以抵抗电动势。逆导型IGBT(RC-IGBT)通过例如在单块芯片中集成IGBT和二极管来为IGBT模块提供具有吸引力的解决方案。
实用新型内容
本实用新型旨在提供开关速度提高的功率器件。
在一个实施方案中，一种功率器件，包括：衬底，所述衬底具有第一区域和第二区域；开关，所述开关设置在所述衬底的所述第一区域中；二极管，所述二极管在所述衬底的所述第二区域中形成；第一金属电极和第二金属电极，所述第一金属电极形成在所述衬底的第一表面，所述第二金属电极形成在所述衬底的第二表面；注入掩模，在所述第一金属电极上形成；以及设置在所述衬底的所述第二区域中的区，所述区具有注入到所述第二区域中以控制电荷载流子的寿命的杂质。
在一个实施方案中，所述功率器件还包括：设置在所述衬底中的漂移层，所述漂移层具有第一类型的杂质；以及杂质区域，具有第二类型的杂质，且设置在所述衬底的所述第二区域中的所述区的上方；其中，所述区中的杂质为不同于所述第一类型的所述第二类型。
在一个实施方案中，所述杂质区域与所述区之间的距离在1μm至10μm之间。
在一个实施方案中，所述注入掩模的厚度大于所述第一电极的厚度，且所述开关是绝缘栅双极晶体管IGBT。
在一个实施方案中，所述注入掩模覆盖所述衬底的所述第一区域，其中所述IGBT在不覆盖所述衬底的所述第二区域的情况下形成。
在一个实施方案中，所述金属结构包括所述注入掩模和所述第一金属电极，所述金属结构在所述衬底的所述第一区域上方具有第一厚度，在所述衬底的所述第二区域上方具有第二厚度，所述第一厚度和所述第二厚度具有至少3μm的厚度差。
在一个实施方案中，所述第一金属电极、所述第二金属电极和所述注入掩模包括相同的金属。
在一个实施方案中，所述注入掩模是形成在所述第一电极上的金属图案。
在一个实施方案中，所述注入掩模包括铝。
在一个实施方案中，所述注入掩模具有至少4μm的厚度。
在一个实施方案中，功率器件包括衬底，该衬底包括漂移层并且具有第一区域和第二区域，该漂移层具有第一类型的杂质；开关，该开关在第一区域中形成；二极管，该二极管在第二区域中形成；金属结构，该金属结构在衬底的表面上方形成，该金属结构在衬底的第一区域上方具有第一厚度并且在衬底的第二区域上方具有第二厚度，第一厚度和第二厚度具有至少3μm的厚度差；以及区，该区设置在衬底的第二区域中的漂移层中，漂移层具有不同于第一类型的第二类型的杂质。
在一个实施方案中，表面是衬底的正面，并且金属结构包括电极和形成在电极上的注入掩模。区是载流子寿命区，该载流子寿命区被构造用于改善二极管的工作特性。电极和注入掩模包括相同的金属。电极和注入掩模包括铝。
在一个实施方案中，开关是逆导型绝缘栅双极晶体管(IGBT)。
在一个实施方案中，第一厚度为至少8μm，并且第二厚度为至少4μm。
在一个实施方案中，衬底的表面是衬底的背面，并且金属结构是具有沟槽的金属层，该沟槽被构造用于允许杂质被注入到衬底的第二区域中以形成区。
在一个实施方案中，二极管是快恢复二极管。
在另一个实施方案中，功率器件包括：开关，该开关设置在衬底的第一区域中；二极管，该二极管在衬底的第二区域中形成；第一金属电极和第二金属电极，该第一金属电极和该第二金属电极分别形成于衬底的第一表面和第二表面上方；注入掩模，该注入掩模形成于第一金属电极上以防止杂质被注入到第一区域中；以及区，该区设置在衬底的第二区域中，该区具有被注入第二区域中的杂质以改善二极管的开关速度。
在另一个实施方案中，注入掩模为形成于第一电极上的金属图案。注入掩模图案包括铝。
在另一个实施方案中，注入掩模的厚度大于第一电极的厚度，并且开关是绝缘栅双极晶体管(IGBT)。
在另一个实施方案中，注入掩模的厚度为至少4μm。
在另一个实施方案中，注入掩模仅覆盖衬底的第一区域，IGBT在第一区域中形成。
在另一个实施方案中，器件还包括设置在衬底中的漂移层。该漂移层具有第一类型的杂质。区中的杂质为不同于第一类型的第二类型。
在另一个实施方案中，用于制造功率器件的方法包括提供衬底，该衬底包括漂移层并且具有第一区域和第二区域；分别在第一区域和第二区域中形成开关和二极管；在衬底上方形成注入掩模，该注入掩模被构造用于防止杂质被注入第一区域中；以及在衬底上方照射杂质以在第二区域中的漂移层中形成区，从而改善二极管的开关速度，注入掩模防止杂质被注入到第一区域中。
在另一个实施方案中，方法还包括在衬底的第一侧上方形成第一电极层，该第一电极层邻近于二极管的阳极设置；以及在衬底的第二侧上方形成第二电极层，该第二电极层邻近于二极管的阴极设置，其中注入掩模包括金属。
在另一个实施方案中，注入掩模在第一电极层上方形成并具有至少4μm的厚度。第一电极层和注入掩模包括铝。
在另一个实施方案中，第二电极层具有在第一区域上方的第一厚度和在第二区域上方的第二厚度，第一厚度比第二厚度更厚并限定了注入掩模。
根据本实用新型的技术方案，能够提高功率器件中的二极管的开关速度。
附图说明
图1A示出了根据一个实施方案的功率半导体器件。
图1B示出了根据另一个实施方案的功率半导体器件。
图2、图3、图4、图5、图6、图7、图8、图9、图10示出了根据一个实施方案的用于制造具有IGBT和二极管的功率半导体器件的方法。
图11至图12示出了根据另一个实施方案的用于制造功率半导体器件的方法。
具体实施方式
本申请的实施方案涉及集成功率半导体器件，该集成功率半导体器件具有形成在单块芯片或衬底上的开关和二极管。虽然开关可以是IGBT或功率MOSFET，但是实施方案是使用IGBT(例如逆导型IGBT)来示出的。二极管可以是被布置成与IGBT反并联的快恢复二极管。快恢复二极管具有快速恢复时间(例如，纳秒)以用于高频应用中。
在一个实施方案中，功率半导体具有形成在同一衬底上的IGBT和快恢复二极管(FRD)。二极管有助于IGBT的关断特性。用寿命控制来处理功率器件以提高二极管的开关速度。寿命控制处理涉及在衬底的二极管区域中注入杂质(例如，氦离子)。由于氦离子将劣化IGBT的正向性能，因此防止氦离子注入IGBT区域中。
在功率器件上(例如，在金属电极层上)形成图案化的注入掩模，以在氦离子被注入二极管区域中时在寿命控制处理期间保护IGBT区域。使用光刻法形成掩模。因此，精确对齐是可能的，例如，控制变化小于1μm。相比之下，当如在常规方法中使用金属板时，位置偏差可以为约100μm，这是有问题的，特别是对于具有小尺寸的集成功率器件而言。
下面结合附图提供实施方案的具体实施方式。本公开的范围仅由权利要求限制并涵盖许多替代、修改和等同物。尽管以给定顺序呈现各种方法的步骤，但是实施方案不必限于以所列顺序执行。在一些实施方案中，某些操作可以除所描述的顺序之外的顺序同时执行，或根本不执行。
在以下描述中阐述了许多具体细节。提供这些细节是为了通过特定示例促进对本公开的范围的透彻理解，并且可以在不具有这些特定细节中的一些特定细节的情况下根据权利要求来实践实施方案。因此，本公开的特定实施方案是说明性的，而不旨在是排他性的或限制性的。出于清楚目的，没有详细地描述与本公开相关的技术领域中已知的技术材料，使得不会不必要地模糊本公开。
图1A示出了根据一个实施方案的功率半导体器件100。功率半导体器件100具有开关102、二极管104和防护区域106。开关可以是MOSFET、IGBT等；然而，下文中将开关描述为IGBT，特别是具有沟槽栅极型结构的逆导型IGBT。二极管104是邻近防护区域106设置的快恢复二极管。在一个实施方案中，功率器件100是集成功率器件，其具有形成在单块芯片或衬底108上的IGBT102和二极管104。二极管104有助于IGBT 102的关断特性。在一个实施方案中，二极管是用于高频应用的快恢复二极管。防护区域106在衬底108的外围围绕IGBT102和二极管104。
功率器件100具有限定在衬底108中的n型漂移区域(或漂移层)。衬底的本体用作漂移区域。因此，漂移区域也可称为衬底108。第一金属电极110设置在衬底108上方，并且用作IGBT的发射电极和二极管的阳极电极。第二金属电极112设置在衬底108下方，并且用作IGBT的集电极和二极管的阴极电极。在一个实施方案中，第一金属电极110包括铝，并且第二金属电极112包括与第一金属电极不同的金属。另选地，两个电极均可包括相同的金属(例如铝)。在一个具体实施方案中，第一金属电极110包括铝并具有约4μm的厚度，并且第二金属电极112包括铝、钛、镍和银并具有约2μm的厚度(例如，800nm的铝层、150nm的钛层、约200nm的镍层和约800nm的银层)。
在一个实施方案中，注入掩模114设置在第一金属电极108上方，覆盖IGBT区域。掩模114用于在二极管区域被照射或被注入氦离子或质子以进行寿命控制处理时保护IGBT区，其中在功率器件100的正面上执行照射。掩模114使用光刻工艺形成，该光刻工艺实现了精确的对准控制。掩模114可以是金属或适用于在二极管区域被氦离子照射的同时保护IGBT区域的其他相对致密的材料。在一个实施方案中，掩模图案114包括与第一金属电极112相同的金属(例如，铝)。在一个实施方案中，掩模图案至少与第一金属电极一样厚。例如，第一金属电极为4μm，并且掩模图案为5μm。
在一个实施方案中，掩模图案114仅覆盖IGBT区域并且暴露防护区域106以及二极管区域。在寿命控制处理期间，氦离子被注入到防护区域106中。可以对防护区域106中掺杂区域的掺杂物浓度进行调整以优化功率器件的特性。
功率器件100包括区116，在区中提供氦离子以在二极管区域中提供寿命控制。区118也设置在防护区域106中。在一个实施方案中，在功率器件100的漂移层中设置区116和118。而IGBT区域没有这样的区，原因在于注入掩模114在寿命控制处理期间保护IGBT区域免受照射，从而防止IGBT的正向性能劣化。
区116(或载流子寿命控制区)缩短电荷载流子的寿命以提高二极管104的开关速度以在高频应用中使用。注入区中的导致缺陷的颗粒(例如，氦离子)会缩短电荷载流子的寿命。
IGBT 102的集电极120和二极管104的阴极122设置在衬底108的与第二金属电极112接触的背面处。在一个实施方案中，集电极120为高掺杂p型层，并且阴极122为高掺杂n型层。
p型导电性的基部区域124靠近衬底108的上表面形成。多个高掺杂p型区域128和具有高掺杂n型导电性的多个发射极区域126在第一金属电极110和基部区域124之间形成。多个沟槽栅极130被设置成与发射极区域126相邻并且在基部区域124下方延伸。每个沟槽栅极130包括设置在沟槽131中的导电栅极材料(例如多晶硅)。栅极绝缘膜132在沟槽的侧壁上形成。绝缘材料的封盖层136在沟槽131的顶部上形成以保护设置在沟槽中的栅极材料。可以在封盖层和发射极区域126上方设置阻挡金属层(未示出)，以防止杂质从第一金属电极110扩散到栅极和发射极区域中。
在一个实施方案中，二极管104被限定为靠近衬底108的边缘，紧邻防护区域106。二极管104包括靠近衬底108上表面设置的阳极138和靠近衬底108背面设置的阴极122。在一个实施方案中，阳极138为高掺杂p型区域。阳极电耦接至第一金属电极110。在一个实施方案中，功率器件100包括多个阳极。阴极122电耦接至第二金属电极112。
在一个实施方案中，n型区域的N缓冲层(未示出)可以设置在集电极120和阴极122上方的衬底108的底部部分处。N缓冲层的掺杂量高于衬底108，该衬底也具有n型导电性，并且用于在阻断电压存在的情况下停止电场并防止电场穿透到集电极中。
图1B示出了根据一个实施方案的功率半导体器件100’。功率半导体器件100'具有开关102'、二极管104'和防护区域106'。在一个实施方案中，开关102'是IGBT，并且二极管104'是邻近防护区域106’设置的快恢复二极管。IGBT 102'和二极管104'在单块芯片或衬底108'上形成。第一金属电极110'设置在功率器件100'的正面上。
第二金属层150设置在衬底108'的背面上。第二金属层150用作集电极和阴极电极。第二金属层具有定位在二极管区域下方的沟槽152。在一个实施方案中，第二金属层150在IGBT区域上方具有约8-12μm、优选约10μm的厚度，并且在二极管区域上具有3-7μm、优选约5μm的厚度。在一个实施方案中，第二金属电极150包括铝层、钛层、镍层和银层，其中铝层为最厚层并且被蚀刻以形成沟槽152。在另一个实施方案中，银层为最厚层并且被蚀刻以形成沟槽152。
使用第二金属电极150的厚度差并控制注入能量，将氦离子注入二极管区域中以在漂移层中形成区154，从而在二极管区域中提供寿命控制，同时保持IGBT区域基本上不含氦离子。第二金属层150的较厚层在氦离子照射步骤期间保护IGBT区域。
图2至图10示出了根据一个实施方案的用于制造具有IGBT和二极管的功率半导体器件的方法。通过从功率器件的正面进行寿命控制处理来制造功率器件。提供了具有n型导电性的半导体衬底200(图2)。第一掩模层202设置在衬底200的上表面上。掩模层可以是氧化物、光致抗蚀剂等。围绕衬底形成了保护环204。保护环为待形成的功率器件提供电隔离和结构完整性。
第一掩模层202被图案化，以选择性地暴露衬底200的某些区域(图3)。对于600V功率器件，将P型掺杂物(例如，硼)注入所暴露区域中以形成具有5μm至8μm深度的多个p型区域206。
在移除图案化的第一掩模层202之后，在衬底200的表面上形成第二掩模层208(图4)。第二掩模层208被图案化以暴露衬底200的选定区域。将P型掺杂物(例如，硼)注入到所暴露区域以形成p型基部区域或阱210。基部区域210限定将形成IGBT的区域。在具体实施中，注入步骤使用约100keV的加速电压，基部区域可以具有约1.5×1013原子/cm2的掺杂物浓度。另选地，注入步骤可以使用约50keV至200keV的加速电压，并且基部区域可以具有约1×1013至1×1014原子/cm2的掺杂物浓度。可以执行退火步骤以使注入的掺杂物扩散从而改善掺杂物浓度分布。
参见图5，第三掩模层(未示出)在衬底的表面上方形成。第三掩模层被图案化以暴露衬底的选定区域。对衬底的暴露表面区域进行蚀刻以形成多个沟槽212。在沟槽上形成栅极绝缘膜214(例如栅极氧化物)。
将导电材料216沉积在沟槽212中并对其进行蚀刻以形成栅极(图6)。在一个实施方案中，导电材料为多晶硅。执行选择性注入以形成邻近衬底上表面处栅极的多个n型表面掺杂区域218，例如，以约130keV的能量注入砷离子。区域218是高掺杂n型区域，并且用作待形成的IGBT的发射极区域。在一个实施方案中，发射极区域218具有4×1015原子/cm2的掺杂剂浓度。通常，掺杂剂浓度被设置成大于1×1015原子/cm2。
参见图7，在衬底上方形成层间介电层，并蚀刻该层间介电层以在沟槽212的顶部上形成多个封盖层220，从而保护其中设置的栅极材料。通过将p型杂质(例如，硼)引入基部区域来形成多个p型表面掺杂区域222。在一个实施方案中，p型表面掺杂区域222为高掺杂区域并且具有1×1015原子/cm2或更高的掺杂物浓度。可以使用多个注入步骤注入硼离子，例如，第一注入步骤对于1×1015原子/cm2的掺杂剂浓度使用约90keV的能量，以及第二注入步骤对于3×1015原子/cm2的掺杂剂浓度使用20keV的能量。二极管区域中的高掺杂p型区域222用作待形成的二极管的阳极224。第一金属层沉积在衬底的上表面上方(图8)。将金属图案化以形成发射极区域218和阳极224的电极228。在一个实施方案中，电极228为铝并且具有约4μm的厚度，但其厚度可以根据具体实施从2μm变化至6μm。在具体实施中，可以沉积并蚀刻套层以在衬底的边缘处形成护套230。护套可以由氮化硅等制成，并且用于防止水分和/或杂质渗透到衬底中。
层232沉积在电极228上方(图9)。蚀刻层以形成覆盖IGBT区域但不覆盖二极管区域和防护区域的注入掩模234。注入掩模234用于在寿命控制处理过程期间杂质(例如，氦离子)被注入二极管区域时保护IGBT区域。因此，注入掩模234具有足够的密度和厚度以防止杂质在后续注入步骤期间渗入IGBT区域中的衬底中。
在一个实施方案中，层232为金属(例如，铝)并且具有4μm或更大(例如，5μm)的厚度。根据具体实施，厚度可以为3μm至6μm。在一个实施方案中，为方便制造，电极228和注入掩模234由相同的材料(例如，铝)制成。此外，由于将光刻法用于形成注入掩模(或金属图案)234，因此可以实现在用于寿命控制的后续注入步骤中的精确对准，例如对准偏差小于1μm。然而，如果使用常规金属板，则位置偏差会显著更大(例如，约100μm)，原因在于板以机械方式或手动方式置于功率装置上。这种大的位置偏差对于具有小尺寸的集成功率器件可能是个问题。
将衬底的背面研磨至所期望的厚度和平面度。将P型掺杂物(例如，硼)注入到底部表面中以形成IGBT的集电极236。将N型掺杂物(例如，磷)注入二极管区域以在衬底的底部表面上形成阴极238。金属层239形成在衬底200的背面上方。金属层239用作集电极236和阴极238的电极。在一个实施方案中，金属层239具有约1-3μm的厚度。金属层可以包括多个金属层。在一个实施方案中，金属层239具有约2μm的厚度，例如，在衬底上方形成的约800nm的铝(Al)层、在Al层上方形成的约150nm的钛(Ti)层、在Ti层上方的约200nm的镍(Ni)层、以及在Ni层上方形成的约800nm的银(Ag)层。
图10示出根据一个实施方案的用于优化IGBT和二极管(例如，快恢复二极管或FRD)的性能的寿命控制处理过程。将杂质(例如，氦离子)注入到二极管区域中以改善二极管的工作特性(例如二极管的开关速度)。然而，需要保护IGBT区，使得这些杂质不会注入其中。否则，IGBT的正向性能将会劣化。将注入掩模(或金属图案)234用于这个步骤。金属图案234防止杂质被注入IGBT区中。
注入能量被选择为使得氦离子被注入到p区域206下方以形成载流子寿命区240。在一个实施方案中，控制注入能量，使得氦离子从衬底背面注入至2μm至10μm的深度。
区240和p区域206之间的距离可以介于1μm至10μm之间，优选地为约2μm至3μm。退火可以在注入步骤之后进行，以稳定由氦注入物所生成的再结合中心的分布，例如在220℃至350℃之间的温度下进行数小时。
在一个实施方案中，注入掩模图案234仅覆盖IGBT区域。因此，在寿命控制处理期间，向防护区注入氦离子。区242在衬底中形成。
根据上述实施方案制造出的功率器件在图1A中示出。在一个实施方案中，功率器件包括相同材料的金属图案，该材料具有两种不同的厚度：(1)设置在二极管区域上方的约4μm的第一厚度，以及(2)设置在IGBT区域上方的约9μm的第二厚度。在一个实施方案中，第一厚度为2-6μm，并且第二厚度为4-15μm。较厚的金属层在寿命控制处理期间用作注入阻挡图案(或注入掩模)，使得氦离子不被注入到IGBT区域中。因此，功率器件包括载流子寿命区(例如，区116)以改善二极管的开关速度。
图11至图12示出了根据另一个实施方案的用于制造具有IGBT和二极管的功率半导体器件的方法。通过从功率器件的背面进行寿命控制处理来制造功率器件。在第一金属层226被图案化以形成图8中的电极228之前，制造过程基本上相同。因此，为了简洁起见，不再描述这些较早的工序。
参见图11，在形成电极228'(和任选的护套230')之后，研磨衬底200'的背面以提供具有期望的厚度和平面度的衬底200'。将P型掺杂物(例如，硼)注入到底部表面中以形成IGBT的集电极236’。将N型掺杂物(例如，磷)注入二极管区域以在衬底的底部表面上形成阴极238’。
金属层239’在衬底200'的背面上方形成至约10-12μm的厚度。金属层239'用作集电极236'和阴极238'的电极。金属层239'可以包括多个金属层，例如，衬底上方的铝(Al)层、铝层上方的钛(Ti)层、钛层上方的镍(Ni)层以及钛层上方的银(Ag)层。在一个实施方案中，Al/Ti/Ni/Ag层被沉积至约800/150/200/9000nm的厚度或被沉积至10,150nm或略超过10μm的总厚度。在定位于二极管区域下方的区域处蚀刻Ag层，直到该Ag层在区域处保留约4,000nm或4μm，从而形成具有约5μm厚度的沟槽250。
因此，金属层239'具有至少两个不同的厚度：对于设置在二极管区下方的部分的约5μm的第一厚度(或沟槽250的厚度)，以及对于设置在IGBT区下方的部分的约10μm的第二厚度。在一个实施方案中，第一厚度为4-6μm，并且第二厚度为8-12μm。
在另一个实施方案中，金属层239'的Al层可以是最厚的层，并且沟槽250可以通过蚀刻Al层来形成。例如，将Al层沉积至约9,000nm(或9μm)的厚度，并且在二极管区域下方的区域处对其进行蚀刻，直到Al层在区域处保留约4,000nm或4μm。依次沉积约150nm的Ti层、约200nm的Ni层和约800nm的Ag层，从而形成在IGBT区域下方具有约10μm厚度并且在二极管区域下方具有约5μm厚度的金属层。
图12示出了根据一个实施方案在功率器件的背面上执行的寿命控制处理。当杂质(例如，氦离子)通过沟槽250注入二极管区域中时，金属层239'的较厚部分保护IGBT区域。
注入能量被选择为使得氦离子被注入二极管区域以形成载流子寿命区240'，而IGBT区域保持不含氦离子。退火可以在注入步骤之后进行，以稳定由氦注入物所生成的再结合中心的分布。
根据上述实施方案制造出的功率器件(例如，功率器件100')在图1B中示出。在一个实施方案中，功率器件包括具有两种不同厚度的金属图案。与图1A的功率器件不同，功率器件100'具有设置在背面上的具有不同厚度的金属图案，以便于从背面执行寿命控制处理。
在一个实施方案中，功率器件包括：开关，该开关设置在衬底的第一区域中；二极管，该二极管在衬底的第二区域中形成；第一金属电极和第二金属电极，该第一金属电极和第二金属电极分别形成于衬底的第一表面和第二表面上方；注入掩模，该注入掩模形成于第一金属电极上以防止杂质被注入到第一区域中；以及区，该区设置在衬底的第二区域中，区具有被注入第二区域中的杂质以改善二极管的开关速度。注入掩模为形成于第一电极上的金属图案。注入掩模包括铝。注入掩模的厚度大于第一电极的厚度，并且开关是绝缘栅双极晶体管(IGBT)。
在一个实施方案中，注入掩模的厚度为至少4μm。注入掩模仅覆盖衬底的第一区域，IGBT在第一区域中形成。
在一个实施方案中，漂移层设置在衬底中，该漂移层具有第一类型的杂质，其中区中的杂质为不同于第一类型的第二类型。
在一个实施方案中，功率器件包括衬底，该衬底包括漂移层以及第一区域和第二区域。开关和二极管分别设置在第一区域和第二区域中。注入掩模设置在衬底上方，注入掩模被构造用于防止杂质被注入到第一区域中。用杂质照射的衬底被用于在第二区域的漂移层中形成区，从而改善二极管的开关速度，该注入掩模防止杂质被注入第一区域中。
在一个实施方案中，第一电极层设置在衬底的第一侧上方，第一电极层邻近于二极管的阳极设置；并且第二电极层设置在衬底的第二侧上方，第二电极层邻近于二极管的阴极设置。注入掩模包括金属。
在一个实施方案中，注入掩模在第一电极层上方形成并具有至少4μm的厚度。第一电极层和注入掩模包括铝。第二电极层具有在第一区域上方的第一厚度和在第二区域上方的第二厚度，第一厚度比第二厚度更厚并限定了注入掩模。
已经与作为示例提出的具体实施方案一起描述了本公开的各方面。在不脱离下面所述的权利要求的范围的情况下，可以对本文所述的实施方案进行多种替换、修改和变化。例如，功率器件可以具有在正面上的具有不同厚度的金属图案和在背面上的具有不同厚度的另一金属图案，以使得能够从两侧执行寿命控制处理。因此，本文所述的实施方案旨在是说明性的而非限制性的。

Claims (10)

1.一种功率器件，其特征在于，包括：
衬底，所述衬底具有第一区域和第二区域；
开关，所述开关设置在所述衬底的所述第一区域中；
二极管，所述二极管在所述衬底的所述第二区域中形成；
第一金属电极和第二金属电极，所述第一金属电极形成在所述衬底的第一表面，所述第二金属电极形成在所述衬底的第二表面；
注入掩模，在所述第一金属电极上形成；以及
设置在所述衬底的所述第二区域中的区，所述区具有注入到所述第二区域中以控制电荷载流子的寿命的杂质。
2.根据权利要求1所述的功率器件，其中，所述功率器件还包括：
设置在所述衬底中的漂移层，所述漂移层具有第一类型的杂质；以及
杂质区域，具有第二类型的杂质，且设置在所述衬底的所述第二区域中的所述区的上方；
其中，所述区中的杂质为不同于所述第一类型的所述第二类型。
3.根据权利要求2所述的功率器件，其中，所述杂质区域与所述区之间的距离在1μm至10μm之间。
4.根据权利要求1所述的功率器件，其中，所述注入掩模的厚度大于所述第一金属电极的厚度，且所述开关是绝缘栅双极晶体管IGBT。
5.根据权利要求4所述的功率器件，其中，所述注入掩模覆盖所述衬底的所述第一区域，其中所述IGBT在不覆盖所述衬底的所述第二区域的情况下形成。
6.根据权利要求1所述的功率器件，其中，金属结构包括所述注入掩模和所述第一金属电极，所述金属结构在所述衬底的所述第一区域上方具有第一厚度，在所述衬底的所述第二区域上方具有第二厚度，所述第一厚度和所述第二厚度具有至少3μm的厚度差。
7.根据权利要求1所述的功率器件，其中，所述第一金属电极、所述第二金属电极和所述注入掩模包括相同的金属。
8.根据权利要求1所述的功率器件，其中，所述注入掩模是形成在所述第一金属电极上的金属图案。
9.根据权利要求1所述的功率器件，其中，所述注入掩模包括铝。
10.根据权利要求1所述的功率器件，其中，所述注入掩模具有至少4μm的厚度。
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