CN215217628U - Temperature self-compensation type infrared photoconductive sensor - Google Patents
Temperature self-compensation type infrared photoconductive sensor Download PDFInfo
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- CN215217628U CN215217628U CN202121173204.7U CN202121173204U CN215217628U CN 215217628 U CN215217628 U CN 215217628U CN 202121173204 U CN202121173204 U CN 202121173204U CN 215217628 U CN215217628 U CN 215217628U
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Abstract
The utility model provides a temperature self-compensating infrared light conductance sensor, it includes light filter, pipe cap, tube socket, the bare chip of thermistor, main sensitive chip and ASIC chip, the light filter pastes the dress on the pipe cap, the pipe cap with the tube socket sealing connection constitutes the optical detection chamber, main sensitive chip with the ASIC chip all bonds on the tube socket; the thermistor bare chip is provided with a lower electrode and an upper electrode, the lower electrode is connected with the tube seat through conductive paste, and the upper electrode is connected with the ASIC chip through a lead wire so as to transmit a detected ambient temperature signal to the ASIC chip; the electrode pad of the main sensitive chip is connected with the ASIC chip through a lead so as to output a first detection signal to the ASIC chip; the ASIC chip is connected with the pin of the tube seat through a lead wire so as to transmit the detection signal after temperature compensation. The utility model discloses can improve infrared sensor work precision, reduce the holistic size of sensor and application circuit.
Description
Technical Field
The utility model relates to an infrared sensor technical field, specific theory has related to a temperature self compensating type infrared photoconductive sensor.
Background
An infrared photoconductive sensor is a typical semiconductor principle device, and can convert a received external weak infrared radiation signal into an electric signal or other forms of characteristic quantities for convenient measurement or observation.
Besides receiving an infrared radiation energy to generate a signal, when the temperature of a working environment in the shell rises, the infrared photoconductive sensor can generate a certain signal by thermal excitation, so that the existing photoconductive sensor is greatly influenced by the ambient temperature, the accuracy is poor when the existing photoconductive sensor is used for measuring the gas concentration or the temperature of an object, and false alarm is easy to generate.
In order to solve the problem, liquid nitrogen refrigeration or other refrigeration modes are adopted to stabilize the temperature of the working environment in the use process of the sensor, so that the working precision of the sensor is improved. Although the method can stabilize the performance of the sensor to a certain degree, the cost is high, the size of a refrigeration part is large, the power consumption is high, and the miniaturization and integration of rear-end equipment are limited to a certain extent.
In order to solve the above problems, people are always seeking an ideal technical solution.
Disclosure of Invention
The utility model aims at the not enough of prior art to a temperature self compensating type infrared light conductivity sensor is provided.
In order to realize the purpose, the utility model discloses the technical scheme who adopts is: a temperature self-compensating infrared photoconductive sensor comprises an optical filter, a tube cap, a tube seat, a thermistor bare chip, a main sensitive chip and an ASIC chip, wherein the optical filter is attached to the tube cap, the tube cap is hermetically connected with the tube seat to form an optical detection cavity, and the main sensitive chip and the ASIC chip are both bonded to the tube seat;
the thermistor bare chip is provided with a lower electrode and an upper electrode, the lower electrode is connected with the tube seat through conductive paste, and the upper electrode is connected with the ASIC chip through a lead wire so as to transmit a detected ambient temperature signal to the ASIC chip;
the electrode pad of the main sensitive chip is connected with the ASIC chip through a lead so as to output a first detection signal to the ASIC chip;
the ASIC chip is connected with the pin of the tube seat through a lead wire so as to transmit the detection signal after temperature compensation.
The utility model has the advantages that:
1) the utility model provides a temperature self-compensating infrared photoconductive sensor, which adds a thermistor bare chip in an optical detection cavity, detects the working environment temperature in the optical detection cavity, carries out certain temperature compensation on a first detection signal output by a main sensitive chip, can compensate the influence of the environment temperature on infrared light, improves the detection precision of the photoelectric infrared sensor and reduces the false alarm probability;
2) a compensation sensitive chip is added in the optical detection cavity to synchronously compensate the influence of the environmental temperature on the sensitive chip, so that the working precision of the infrared sensor is further improved;
3) the thermistor bare chip and the compensation sensitive chip can form a temperature compensation fault-tolerant structure, so that the condition that temperature compensation cannot be carried out due to the fault of the separately arranged thermistor bare chip is avoided, and the condition that temperature compensation cannot be carried out due to the fault of the separately arranged compensation sensitive chip is also avoided.
Drawings
Fig. 1 is a schematic structural diagram of a temperature self-compensation infrared photoconductive sensor of the present invention;
FIG. 2 is a schematic structural diagram of a temperature self-compensation infrared photoconductive sensor with a compensation sensitive chip;
fig. 3 is a top view of the temperature self-compensation infrared photoconductive sensor of the present invention;
fig. 4 is a schematic structural diagram of an ASIC chip of the present invention;
in the figure: 1. a pipe cap; 2. an optical filter; 3. a main sensitive chip; 4. a thermistor bare chip; 5, an ASIC chip; 6. a pin; 7. a tube holder; 8. and compensating the sensitive chip.
Detailed Description
The technical solution of the present invention will be described in further detail through the following embodiments.
As shown in fig. 1 and 3, a temperature self-compensation infrared photoconductive sensor comprises an optical filter 2, a tube cap 1, a tube seat 7, a thermistor bare chip 4, a main sensitive chip 3 and an ASIC chip 5, wherein the optical filter 2 is attached to the tube cap 1, the tube cap 1 is hermetically connected with the tube seat 7 to form an optical detection cavity, and the main sensitive chip 3 and the ASIC chip 5 are both bonded to the tube seat 7;
the thermistor bare chip 4 is provided with a lower electrode and an upper electrode, the lower electrode is connected with the tube seat 7 through conductive paste, and the upper electrode is connected with the ASIC chip 5 through a lead wire so as to transmit a detected ambient temperature signal to the ASIC chip 5;
the electrode pad of the main sensitive chip 3 is connected with the ASIC chip 5 through a lead so as to output a first detection signal to the ASIC chip 5;
the ASIC chip 5 is connected with a pin 6 of the tube seat 7 through a lead wire so as to transmit a detection signal after temperature compensation.
Specifically, the lower electrode and the upper electrode may be silver electrodes, and an NTC ceramic body is disposed between the lower electrode and the upper electrode.
It should be noted that, utility model discloses increase thermistor bare chip 4 in the optical detection chamber, ASIC chip 5 acquires and monitors the operational environment temperature of optical detection intracavity through reading thermistor bare chip 4's signal to carry out certain temperature compensation to the first detected signal of main sensitive chip 3 output, but compensation ambient temperature improves photoelectric infrared sensor's detection precision to infrared light's influence, reduces the mistake and reports probability.
Specifically, the tube cap 1 is a metal tube cap, the tube seat 7 is a metal tube seat, the metal tube cap and the optical filter 2 are bonded together through glue such as epoxy resin and the like, light leakage and tightness are guaranteed, and the metal tube cap is connected with the metal tube seat in a welding mode and certain tightness is guaranteed; the metal tube seat comprises more than four pins, and the surface of the tube seat is plated with a gold layer.
Specifically, the main sensitive chip 3 comprises more than two electrode pads, is adhered to the tube seat 7 by using glue such as epoxy resin and the like, and is connected with the ASIC chip 5 by using a metal lead by a lead bonding method; the lower electrode at the bottom of the thermistor bare chip 4 is adhered to the tube seat 7 through conductive paste, and the upper electrode of the thermistor bare chip 4 is connected with the ASIC chip 5 through a metal lead by a lead bonding method; the ASIC chip 5 includes a certain number of electrode pads, is bonded to the stem 7 with glue such as epoxy resin, and is connected to the stem 7 with a metal lead in a lead bonding manner, thereby performing power supply and signal communication.
Further, the temperature self-compensation type infrared photoconductive sensor further comprises a compensation sensitive chip 8 adhered to the tube seat, wherein an electrode pad of the compensation sensitive chip 8 is connected to the ASIC chip 5 through a lead wire to output a second detection signal to the ASIC chip 5, as shown in fig. 2.
Specifically, the compensation sensitive chip 8 includes two or more electrode pads, is bonded to the tube seat 7 by using glue such as epoxy resin, and is connected to the ASIC chip 5 by a metal lead by a lead bonding method, thereby performing signal compensation on the photoelectric sensitive chip.
When the temperature self-compensation type infrared photoconductive sensor works, the ASIC chip 5 carries out temperature compensation on a first detection signal output by the main sensitive chip 3 according to an environment temperature signal output by the thermistor bare chip 4, and also carries out temperature compensation on the first detection signal output by the main sensitive chip 3 according to a second detection signal output by the compensation sensitive chip 8 so as to synchronously compensate the influence of the environment temperature on the sensitive chip and further improve the working precision of the infrared sensor.
It should be noted that, add the bare chip 4 of thermistor and the sensitive chip 8 of compensation in the optical detection intracavity, can form the fault-tolerant structure of temperature compensation, avoid taking place because of the bare chip 4 trouble of thermistor that sets up alone leads to the condition that can't carry out the temperature compensation, avoid taking place simultaneously because of the sensitive chip 8 trouble of compensation that sets up alone leads to the condition that can't carry out the temperature compensation, reduce the influence of different operational environment temperatures to infrared sensor signal precision, make infrared sensor guarantee stable output precision under different operational environment temperatures.
In this embodiment, a specific implementation manner of an ASIC chip is given, as shown in fig. 4, the ASIC chip 5 includes a preamplifier circuit i, a filter circuit i, a signal amplifier circuit i, and an analog-to-digital converter i, which are connected in sequence, a preamplifier circuit ii, a filter circuit ii, a signal amplifier circuit ii, and an analog-to-digital converter ii, which are connected in sequence, and a preamplifier circuit iii, a filter circuit iii, a signal amplifier circuit iii, and an analog-to-digital converter iii, which are connected in sequence, where the analog-to-digital converter i, the analog-to-digital converter ii, and the analog-to-digital converter iii are respectively connected to a central processing unit;
the input end of the preamplification circuit I is connected with the electrode bonding pad of the main sensitive chip 3, the input end of the preamplification circuit II is connected with the electrode bonding pad of the compensation sensitive chip 8, and the input end of the preamplification circuit III is connected with the upper electrode of the thermistor bare chip 4.
It can be understood, the utility model discloses under not changing the sensor size, at the inside integrated ASIC chip 5 of sensor, ASIC chip 5 integrates the rear end circuit, not only can carry out analog-to-digital conversion, enlarge and filtering with the analog signal of main sensitive chip 3 output, can also carry out analog-to-digital conversion, enlarge and filtering to the analog signal of thermistor bare chip 4 output, and based on the temperature compensation curve, carry out temperature compensation according to the ambient temperature signal of thermistor bare chip 4 output to the first detected signal of main sensitive chip 3 output, finally through the reliable and stable digital signal of pin output, carry out temperature compensation inside the sensor, to a great extent reduces the holistic size of sensor and application circuit, more do benefit to the miniaturization of rear end equipment, integrate.
Specifically, the preamplifier circuit i, the preamplifier circuit ii, and the preamplifier circuit iii may employ a preamplifier to amplify a weak analog electrical signal, the filter circuit i, the filter circuit ii, and the filter circuit iii may employ a filter to filter the amplified analog electrical signal, the signal amplifier circuit i, the signal amplifier circuit ii, and the signal amplifier circuit iii employ a triode amplifier circuit or an operational amplifier chip to amplify the filtered analog electrical signal, and the analog-to-digital converter i, the analog-to-digital converter ii, and the analog-to-digital converter iii perform analog-to-digital conversion on the amplified analog electrical signal, and transmit the amplified digital signal to a central processing unit.
It should be noted that the compensation sensitive chip 8 and the main sensitive chip 3 have the same electrical and photoconductive properties, and are thermopile sensitive chips and the like; in a specific embodiment, the main sensitive chip 3 is arranged below the optical filter 2, so that the main sensitive chip 3 is at the center of the tube seat and can receive infrared light passing through the optical filter 2 to generate a first electrical detection signal; the compensation sensitive chip 8 is arranged below the edge of the tube cap, although the compensation sensitive chip 8 is positioned in the optical detection cavity of the sensor, the compensation sensitive chip is shielded by the edge of the tube cap 1, infrared light passing through the optical filter 2 cannot be received, and a photoconductive signal cannot be generated.
In another specific embodiment, a light shielding layer is disposed on the upper surface of the compensation sensitive chip 8, so that even if the compensation sensitive chip 8 is not shielded by the edge of the cap 1, it can be ensured that the compensation sensitive chip 8 cannot receive the infrared light passing through the optical filter 2.
It can be understood that the compensation sensitive chip 8 and the main sensitive chip 3 both generate certain noise signals due to the change of the ambient temperature, so that the signal deviation caused by the temperature change can be compensated through the structure, and the working precision and accuracy of the sensor are improved.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention and not to limit it; although the present invention has been described in detail with reference to preferred embodiments, it should be understood by those skilled in the art that: the invention can be modified or equivalent substituted for some technical features; without departing from the spirit of the present invention, it should be understood that the scope of the claims is intended to cover all such modifications and variations.
Claims (6)
1. A temperature self-compensating infrared photoconductive sensor is characterized in that: the optical filter is attached to the tube cap, the tube cap is hermetically connected with the tube seat to form an optical detection cavity, and the main sensitive chip and the ASIC chip are both bonded on the tube seat;
the thermistor bare chip is provided with a lower electrode and an upper electrode, the lower electrode is connected with the tube seat through conductive paste, and the upper electrode is connected with the ASIC chip through a lead wire so as to transmit a detected ambient temperature signal to the ASIC chip;
the electrode pad of the main sensitive chip is connected with the ASIC chip through a lead so as to output a first detection signal to the ASIC chip;
the ASIC chip is connected with the pin of the tube seat through a lead wire so as to transmit the detection signal after temperature compensation.
2. The temperature self-compensating infrared photoconductive sensor of claim 1, wherein: the compensation sensitive chip is bonded on the tube seat, and an electrode bonding pad of the compensation sensitive chip is connected with the ASIC chip through a lead so as to output a second detection signal to the ASIC chip.
3. The temperature self-compensating infrared photoconductive sensor of claim 2, wherein: the ASIC chip comprises a pre-amplification circuit I, a filter circuit I, a signal amplification circuit I and an analog-to-digital converter I which are sequentially connected, a pre-amplification circuit II, a filter circuit II, a signal amplification circuit II and an analog-to-digital converter II which are sequentially connected, and a pre-amplification circuit III, a filter circuit III, a signal amplification circuit III and an analog-to-digital converter III which are sequentially connected, wherein the analog-to-digital converter I, the analog-to-digital converter II and the analog-to-digital converter III are respectively connected with a central processing unit;
the input end of the pre-amplification circuit I is connected with the electrode bonding pad of the main sensitive chip, the input end of the pre-amplification circuit II is connected with the electrode bonding pad of the compensation sensitive chip, and the input end of the pre-amplification circuit III is connected with the upper electrode of the thermistor bare chip.
4. The temperature self-compensating infrared photoconductive sensor of claim 2, wherein: the main sensitive chip is arranged below the optical filter.
5. The temperature self-compensating infrared photoconductive sensor of claim 4, wherein: the compensation sensitive chip is arranged below the edge of the pipe cap.
6. The temperature self-compensating infrared photoconductive sensor of claim 4, wherein: and a shading layer is arranged on the upper surface of the compensation sensitive chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121173204.7U CN215217628U (en) | 2021-05-28 | 2021-05-28 | Temperature self-compensation type infrared photoconductive sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121173204.7U CN215217628U (en) | 2021-05-28 | 2021-05-28 | Temperature self-compensation type infrared photoconductive sensor |
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| Publication Number | Publication Date |
|---|---|
| CN215217628U true CN215217628U (en) | 2021-12-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121173204.7U Active CN215217628U (en) | 2021-05-28 | 2021-05-28 | Temperature self-compensation type infrared photoconductive sensor |
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| CN (1) | CN215217628U (en) |
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2021
- 2021-05-28 CN CN202121173204.7U patent/CN215217628U/en active Active
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