CN215185001U - Cooling structure with heat dissipation channel and laser diode packaging structure - Google Patents

Cooling structure with heat dissipation channel and laser diode packaging structure Download PDF

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CN215185001U
CN215185001U CN202121723954.7U CN202121723954U CN215185001U CN 215185001 U CN215185001 U CN 215185001U CN 202121723954 U CN202121723954 U CN 202121723954U CN 215185001 U CN215185001 U CN 215185001U
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chip
heat dissipation
metal
heat
channels
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杨海涛
童小东
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Shenzhen Times Suxin Technology Co Ltd
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Shenzhen Times Suxin Technology Co Ltd
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Abstract

The utility model provides a cooling structure and laser diode packaging structure with heat dissipation channel, relate to semiconductor package device technical field, including the metal cooling fin of a plurality of range upon range of settings, be equipped with the insulating piece between the adjacent two-layer metal cooling fin, the insulating piece is adducted in one side of first direction in order to be formed with the centre gripping space between adjacent two-layer metal cooling fin, the centre gripping space is used for pressing from both sides and establishes the chip, insulating piece and the chip on the same layer set up side by side along the first direction, still be formed with heat dissipation channel between chip and metal cooling fin and the insulating piece, first direction is perpendicular with range upon range of direction. The both sides of chip have the metal fin respectively, can dispel the heat to the chip both sides simultaneously, and heat dissipation channel can further improve the heat-sinking capability to the chip, improves holistic radiating effect, and the chip is high in the radiating efficiency of packaging in-process, and the radiating effect is good, and stack structure and heat dissipation channel complex mode carry out high-efficient heat dissipation to the chip, can also reduce heat radiation material's cost, and the structure integrate, compact degree is high.

Description

Cooling structure with heat dissipation channel and laser diode packaging structure
Technical Field
The application relates to the technical field of semiconductor packaging devices, in particular to a cooling structure with a heat dissipation channel and a laser diode packaging structure.
Background
With the rapid development of modern electronic information technology, electronic products are gradually developed towards miniaturization, portability and high power, which puts higher demands on the heat dissipation package of the products, and the heat dissipation problem of the chips needs to be solved while the performance of the chips needs to be ensured. Electronic packaging is thus driving the development of devices towards the information-oriented society, along with electronic design and manufacturing. The future laser electronic device has good application prospect in the fields of military affairs, aerospace, high-end civil electronic devices and the like, and the packaging material of the future laser electronic device is developed towards the directions of integration, modularization, good heat dissipation and low cost.
The quantity and the power of present encapsulation laser chip are higher and higher, and the urgent need good heat dissipation, simple structure, reliability are high, and the structure with reasonable cost satisfies the encapsulation needs.
SUMMERY OF THE UTILITY MODEL
An object of this application is to provide a cooling structure and laser diode packaging structure with heat dissipation channel, can improve the radiating efficiency of structure, reduce cost through the structure setting that integrates.
An aspect of this application provides a cooling structure with heat dissipation channel, including a plurality of metal cooling fins that range upon range of setting, it is adjacent two-layer be equipped with the insulating piece between the metal cooling fin, the insulating piece is in one side adduction of first direction with adjacent two-layer be formed with the centre gripping space between the metal cooling fin, the centre gripping space is used for pressing from both sides and establishes the chip, on the same layer the insulating piece with the chip is followed the first direction sets up side by side, the chip with the metal cooling fin with still be formed with heat dissipation channel between the insulating piece, first direction is perpendicular with range upon range of direction.
Optionally, on the same layer the chip with follow between the insulating piece be equipped with the interval in the first direction, one side of metal fin is followed two surfaces of range upon range of direction are equipped with a plurality of parallel microchannels respectively, the microchannel is followed the first direction extends, the chip is located and is equipped with one side of microchannel, the cover surface of microchannel is greater than the cover surface of chip, so that the microchannel with the interval intercommunication is in order to form heat dissipation channel.
Optionally, the micro channel is a sawtooth formed on two surfaces of the metal heat sink along the stacking direction, the sawtooth extends along the first direction, the starting end of the sawtooth is flush with the chip and the end of the metal heat sink, respectively, and the length of the micro channel is greater than the length of the chip.
Optionally, the chip and the metal heat sink are connected by a plurality of soldering structures, and the soldering structures and the micro-channels are arranged at intervals.
Optionally, each of the metal heat sinks is further provided with a first metal layer on two surfaces along the stacking direction, and the chip and the insulating sheet are located on the first metal layer.
Optionally, the metal heat sink is a molybdenum-copper heat sink, the first metal layer includes a gold layer and a tin layer sequentially disposed on a surface of the molybdenum-copper heat sink, and the chip and the insulating sheet are disposed on the tin layer.
Optionally, the insulating sheet is provided with second metal layers on both surfaces in the stacking direction.
Optionally, the insulating sheet is an aluminum nitride ceramic sheet, and the insulating sheet and the chip have thermal expansion coefficients matched.
Optionally, a welding layer is disposed between the insulating sheet and the metal heat sink.
On the other hand of this application, provides a laser diode packaging structure, including a plurality of laser bar chips and foretell cooling structure with heat dissipation channel, it is a plurality of laser bar chip is located respectively adjacent two of cooling structure with heat dissipation channel in the centre gripping space between the metal fin, and be located the metal fin is equipped with one side of heat dissipation channel.
The cooling structure and the laser diode packaging structure with heat dissipation channel that this application embodiment provided, the cooling structure with heat dissipation channel includes the metal cooling fin of a plurality of range upon range of settings, is equipped with the insulating piece between the adjacent two-layer metal cooling fin, and on the first direction, one side adduction of insulating piece is in order to be adjacent two-layerly be formed with the centre gripping space between the metal cooling fin, and the centre gripping space is used for pressing from both sides the chip, and insulating piece and the chip on the same floor set up side by side along the first direction, still is formed with heat dissipation channel between chip and metal cooling fin and the insulating piece, and first direction is perpendicular with range upon range of direction. The metal radiating fins and the insulating sheets are arranged in a spaced and stacked mode to form a stacked structure; in the laminated structure, still be used for pressing from both sides between the adjacent two-layer metal fin and establish the chip, set up side by side between adjacent two-layer metal fin along the first direction with chip and the insulating piece on the same layer, the chip, form heat dissipation channel between metal fin and the insulating piece, heat dissipation channel is used for dispelling the heat to the chip, integrate the encapsulation back together with the chip and the cooling structure that has heat dissipation channel like this, the both sides of chip have metal fin respectively, can dispel the heat simultaneously to the chip both sides, and heat dissipation channel can further improve the heat-sinking capability to the chip, improve holistic radiating effect, make the chip radiating efficiency in the packaging process high, the radiating effect is good, adopt this kind of laminated structure and heat dissipation channel complex mode to carry out high-efficient heat dissipation to the chip, and set up through the integration of structure, make the compact degree of structure high, can also reduce the heat dissipation cost.
Further, the laser diode package structure includes a plurality of laser bar chips and the cooling structure with the heat dissipation channel of the above embodiment, the plurality of laser bar chips are respectively located in the clamping space between two adjacent metal heat sinks of the cooling structure with the heat dissipation channel, and are located on one side of the metal heat sink where the heat dissipation channel is located. The laser bar chip is positioned between two adjacent metal radiating fins, the laser bar chip radiates heat through the metal radiating fins on two sides, a gap is formed between the laser bar chip and the insulating sheet on the same layer, and the gap and the micro-channels on the metal radiating fins form a radiating channel, so that the laser bar chip is further radiated, the radiating capacity of the structure is improved, and the laser diode packaging structure formed by the laser bar chip has good radiating efficiency and high radiating efficiency.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and that those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a cooling structure with a heat dissipation channel provided in this embodiment;
fig. 2 is a schematic structural diagram of a metal heat sink having a cooling structure with heat dissipation channels according to this embodiment;
fig. 3 is one of the schematic structural diagrams of the laser diode package structure provided in this embodiment;
fig. 4 is a second schematic view of a laser diode package structure provided in this embodiment;
fig. 5 is a partial structural schematic view of a metal heat sink of the cooling structure with heat dissipation channels according to the present embodiment;
fig. 6 is a third schematic view of a laser diode package structure provided in this embodiment.
Icon: 100-a cooling structure with heat dissipation channels; 101-a metal heat sink; 102-an insulating sheet; 103-a microchannel; 104-a fixation hole; 105-a welded structure; 201-chip; d0、D1-a length; f-the stacking direction; f1-a first direction.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.
In the description of the present application, it should be noted that the terms "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the application usually place when using, and are only used for convenience in describing the present application and simplifying the description, but do not indicate or imply that the devices or elements that are referred to must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
It should also be noted that, unless expressly stated or limited otherwise, the terms "disposed" and "connected" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
With the rapid development of modern electronic information technology, electronic products are developed in the direction of miniaturization, portability and multi-functionalization. Electronic packaging materials and techniques have led to the ultimate realization of electronic devices as functional products. At present, various novel packaging materials, technologies and processes are developed in China. Electronic packaging is driving the development of information-oriented society along with electronic design and manufacturing. In the fields of military, aerospace, high-end civil electronic devices and the like, future metal-based packaging materials are developed towards high power, integration and low cost. Lightweight, highly thermally conductive materials and CTE-matched new materials would hold great promise.
On this basis, the embodiment of the present application provides a cooling structure 100 with a heat dissipation channel for high-efficient heat dissipation is carried out in the chip 201 packaging process, and through the setting that integrates, reduces cooling structure's heat dissipation cost.
Specifically, referring to fig. 1, an embodiment of the present application provides a cooling structure 100 with a heat dissipation channel, including: the heat radiating structure comprises a plurality of metal radiating fins 101 arranged in a stacked mode, wherein an insulating sheet 102 is arranged between two adjacent layers of metal radiating fins 101, one side of the insulating sheet 102 is folded inwards in a first direction F1 to form a clamping space between the two adjacent layers of metal radiating fins 101, the clamping space is used for clamping a chip 201, the insulating sheet 102 and the chip 201 on the same layer are arranged side by side along the first direction F1, heat radiating channels are further formed between the chip 201 and the metal radiating fins 101 as well as between the insulating sheet 102, and the first direction F1 is perpendicular to the stacking direction F.
The metal heat radiating fins 101 and the insulating sheets 102 are sequentially arranged in a laminated mode in a spaced mode, the insulating sheets 102 are arranged between two adjacent layers of the metal heat radiating fins 101, the two adjacent layers of the metal heat radiating fins 101 are separated through the insulating sheets 102, the metal heat radiating fins 101 are arranged between the two adjacent layers of the insulating sheets 102 to form a laminated structure, and the two outermost layers of the laminated structure are the metal heat radiating fins 101.
In the first direction F1, one side of the insulating sheet 102 is folded inward so that a clamping space can be formed between two adjacent layers of the metal heat sinks 101, the chip 201 is clamped by the clamping space, and the chip 201 and the insulating sheet 102 in the same layer are arranged side by side along the first direction F1. The heat dissipation channel formed among the chip 201, the metal heat dissipation sheet 101 and the insulation sheet 102 is used for dissipating heat of the chip 201, and heat generated by the operation of the chip 201 is dissipated through the heat dissipation channel, so that the chip 201 is efficiently dissipated, and the heat dissipation effect of the structure is improved.
The chip 201 is clamped between two adjacent metal radiating fins 101, the two sides of the chip 201 are simultaneously radiated by the metal radiating fins 101, and the radiating effect and the radiating efficiency of the chip 201 are improved through the radiating channels.
It should be noted that the number of stacked layers of the stacked structure may not be specifically limited, in an embodiment of the present application, the stacked structure is five metal heat sinks 101 sandwiching four insulating sheets 102 and four chips 201, and the external dimension of the cooling structure 100 with heat dissipation channels is 20mm × 11mm × 1.4mm to match the chips 201; the width of the micro-channel 103 is about 200 μm to 300 μm. However, considering the power requirements of the chip 201 and the size of the entire structure after packaging, the total number of stacked layers of the stacked structure is generally less than twenty-one.
In addition, the laminated structure is further provided with two through fixing holes 104, the fixing holes 104 penetrate through each layer of metal heat dissipation sheet 101 and the insulation sheet 102, and the two fixing holes 104 are both located on one side of the laminated structure away from the chip 201 and are symmetrically and uniformly distributed with a center line of the laminated structure.
The fixing hole 104 is provided for subsequent packaging, and specifically, an insulating screw such as plastic or alumina ceramic is used for matching with the fixing hole 104 for packaging. Of course, the number of the fixing holes 104 is not particularly limited in the embodiments of the present application, and the specific number and position may be set according to actual needs.
In the cooling structure 100 with a heat dissipation channel provided in the embodiment of the present application, a plurality of metal heat dissipation fins 101 and a plurality of insulation sheets 102 are stacked at intervals to form a stacked structure; in the laminated structure, the insulating sheet 102 is retracted in one side of the first direction F1 to form a clamping space between two adjacent layers of metal heat sinks 101 for clamping the chip 201, the chip 201 and the insulating sheet 102 on the same layer are arranged between two adjacent layers of metal heat sinks 101 side by side along the first direction F1, heat dissipation channels are formed among the chip 201, the metal heat sinks 101 and the insulating sheet 102, and the heat dissipation channels are used for dissipating heat of the chip 201, so that after the chip 201 and the cooling structure 100 with the heat dissipation channels are integrally packaged together, the metal heat sinks 101 are respectively arranged on two sides of the chip 201, heat can be dissipated simultaneously on two sides of the chip 201, the heat dissipation channels can further improve the heat dissipation capability of the chip 201, the overall heat dissipation effect is improved, the heat dissipation efficiency of the chip 201 in the packaging process is high, the heat dissipation effect is good, and the chip 201 is efficiently dissipated by adopting the laminated structure and the heat dissipation channels in a matching manner, and through the integrated setting of structure for the compact degree of structure is high, can also reduce the heat dissipation cost.
Specifically, as shown in fig. 2 and 3, a space is provided between the chip 201 and the insulating sheet 102 in the same layer along the first direction F1, a plurality of parallel micro channels 103 are respectively provided on both surfaces of one side of the metal heat sink 101 along the stacking direction F, the micro channels 103 extend along the first direction F1, the chip 201 is located on the side where the micro channels 103 are provided, and the coverage area of the micro channels 103 is larger than that of the chip 201, so that the micro channels 103 communicate with the space to form heat dissipation channels.
The two surfaces of one side of the metal heat sink 101 along the stacking direction F are respectively provided with a plurality of micro channels 103, and the plurality of micro channels 103 are arranged in parallel, in one embodiment of the present application, the micro channels 103 are saw teeth formed on the two surfaces of the metal heat sink 101 along the stacking direction F, the saw teeth extend from one end of the metal heat sink 101 to the other end of the metal heat sink 101, and the extending direction of the saw teeth is the first direction F1. The zigzag micro-channels 103 can increase the heat dissipation area of the metal heat sink 101 near the chip 201, and further improve the heat dissipation capability of the chip 201.
Also, the micro channels 103 on both surfaces of the metal heat sink 101 are arranged in a staggered manner, that is, projections of the micro channels 103 on both surfaces in the stacking direction F are staggered, and the depth of each micro channel 103 on both surfaces is the same.
Of course, the two surface microchannels 103 may also be aligned, i.e. the projections of the two surface microchannels 103 in the stacking direction F overlap, and the depths of the two surface microchannels 103 may also be different. This is not particularly limited in the embodiments of the present application.
The chip 201 and the insulating sheet 102 have an interval in the first direction F1, the coverage of the micro channel 103 is larger than the coverage of the chip 201, and the chip 201 does not fully occupy the micro channel 103, so that the micro channel 103 can be communicated with the interval to form a heat dissipation channel, and the smoothness of the heat dissipation channel is ensured. The heat of the chip 201 is timely and efficiently dissipated through the heat dissipation channel, so that the purpose of efficiently dissipating the heat of the chip 201 is achieved.
As shown in fig. 4, in the first direction F1, the starting ends of the saw teeth are flush with the ends of the chip 201 and the metal heat sink 101, respectively, and the length D of the micro-channel 1031Greater than the length D of the chip 2010
The serrations are formed from one end of the metal heat sink 101 to extend in a first direction F1 toward the other side of the metal heat sink 101, and a start of the serrations, the end of the metal heat sink 101, and the end of the chip 201 are flush with each other on the same side, so that the width of the micro channel 103 and the width of the chip 201 are equal to each other when the length D of the micro channel 103 is equal to each other1Greater than the length D of the chip 2010In this case, the coverage of the micro-channel 103 may be larger than the coverage of the chip 201, so that the chip 201 cannot completely fill the micro-channel 103.
In order to ensure a stable connection of the structure, the chip 201 and the metal heat sink 101, and the insulating sheet 102 and the metal heat sink 101 are connected by welding. When the chip 201 and the metal heat sink 101 are bonded, the plurality of bonding structures 105 are connected, and the plurality of bonding structures 105 and the plurality of microchannels 103 are arranged at intervals.
As shown in fig. 5, a plurality of solder structures 105 form a solder layer, but the solder layer is discontinuous, and on both surfaces of the metal heat sink 101 in the stacking direction F, the solder structure 105 is not provided at a position where the micro channel 103 is provided, and the solder structure 105 is provided at a position where the micro channel 103 is not provided, so that the solder layer is broken at the position where the micro channel 103 is provided, so that the solder structure 105 and the micro channel 103 are arranged at intervals, the micro channel 103 is provided between adjacent solder structures 105, and the solder structure 105 is provided between adjacent micro channels 103, so that the solder structure 105 is not provided at the position of the micro channel 103, in order to prevent the solder from blocking the micro channel 103 and hindering the heat dissipation of the chip 201.
Since the chip 201 and the metal heat sink 101 are connected by the solder structures 105, the length of the solder structures 105 and the length D of the chip 201 in the first direction F10The same is true.
Further, each of the metal heat sinks 101 is also provided with a first metal layer on both surfaces in the stacking direction F, and the chip 201 and the insulating sheet 102 are located on the first metal layer.
The metal heat sink 101 is provided with first metal layers on the upper surface and the lower surface in the stacking direction F, respectively, and the chip 201 and the insulating sheet 102 of the same layer are located on the first metal layers. By providing the first metal layer on the metal heat sink 101, the heat conduction capability between the metal heat sink 101 and the chip 201 is improved.
The metal heat radiating fins 101 can be molybdenum-copper heat radiating fins, the molybdenum-copper heat radiating fins are heat radiating fins made of molybdenum-copper alloy, the molybdenum-copper alloy has high heat conductivity, the properties of molybdenum and copper are close to each other, the advantages of copper and molybdenum are integrated, and the heat radiating fins are good in electric conductivity, good in heat conductivity and small in thermal expansion.
The metal radiating fin 101 made of the molybdenum-copper alloy has the characteristic of isotropic corrosion, so that when the molybdenum-copper radiating fin is used as the metal radiating fin 101, the micro-channel 103 with a certain depth-to-width ratio can be obtained on the metal radiating fin 101 by adopting a chemical corrosion method, and the heat radiation performance is also influenced by the ratio of the depth to the width of the micro-channel 103, so that the micro-channel 103 with higher dimensional precision and high depth-to-width ratio can be obtained, and the heat radiation effect of the structure is facilitated.
The first metal layer can comprise a gold layer and a tin layer which are sequentially arranged on the surface of the molybdenum-copper radiating fin, the gold layer is arranged close to the molybdenum-copper radiating fin, the heat conductivity of gold is good, and the heat dissipation capability of the molybdenum-copper radiating fin can be enhanced; moreover, the gold layer also has a moisture-proof function so as to prevent the metal heat sink 101 from being corroded; the tin layer is far away from the molybdenum-copper radiating fin, the chip 201 and the insulating sheet 102 are positioned on the tin layer, and the tin has good weldability, so that the chip 201 and the insulating sheet 102 can be firmly welded on the molybdenum-copper radiating fin; by providing the first metal layer, the heat conduction efficiency of the chip 201 and the metal heat sink 101 is further improved.
The thickness of the gold layer and the tin layer can be between 0.8um and 1um to meet the requirement, and the thickness of the gold layer and the tin layer is not too thick to influence the whole size of the structure, and the cost is saved.
On the other hand, when insulating sheet 102 and metal heat dissipation sheet 101 are stacked, insulating sheet 102 and metal heat dissipation sheet 101 are also connected by welding to secure the stability of the stacked structure, and insulating sheet 102 and metal heat dissipation sheet 101 are fixed by providing a welding layer.
The insulating sheet 102 may be an aluminum nitride ceramic sheet having a high thermal conductivity to efficiently dissipate heat from the chip 201 and the cooling structure. The aluminum nitride ceramic sheet is AIN4The tetrahedron is a covalent bond compound with a structural unit, has a wurtzite structure, belongs to a hexagonal crystal system, belongs to a high-temperature heat-resistant material, has good thermal shock resistance, and can resist extreme heat of 2200 ℃. The aluminum nitride ceramic substrate has high thermal conductivity, low expansion coefficient, high strength, high temperature resistance, chemical corrosion resistance, high resistivity and low dielectric loss, is an ideal large-scale integrated circuit radiating substrate and packaging material, and improves the overall radiating effect of the structure by taking the aluminum nitride ceramic wafer as the insulating sheet 102.
Of course, the insulating sheet 102 may also be other ceramic sheets, such as an alumina ceramic sheet, in which the alumina content is high, the structure is relatively dense, and the alumina ceramic sheet has special properties, and is a close-packed hexagonal structure formed by oxygen ions, and the aluminum ions are filled in two thirds of octahedral gaps, so the alumina ceramic sheet has high melting point, high hardness and excellent wear resistance, and the thermal conductivity coefficient thereof is between 20W and 30W, and is an ideal thermal conductive insulating material as a heat dissipation substrate, and can be applied to thermal conductive insulation of power tubes such as strong current, strong voltage, high temperature parts, IC MOS tubes, IGBTs, and the like. Therefore, the aluminum oxide ceramic plate and other materials with high heat conduction and insulation can be used.
The two stacked surfaces of the insulating sheet 102 are further provided with a second metal layer, which can be metalized on the surface of the insulating sheet 102 by electroplating or the like to form a thin second metal layer, which facilitates the welding and heat transfer between the insulating sheet 102 and the metal heat sink 101. The specific metal of the second metal layer is not limited herein, as long as welding and heat conduction are facilitated.
For example, the metal heat sink 101 is a molybdenum-copper heat sink, the insulating sheet 102 is an aluminum nitride ceramic sheet, the molybdenum-copper heat sink may be plated with a gold layer and a tin layer, and the aluminum nitride ceramic sheet may be plated with a second metal layer for easy welding and heat conduction.
In addition, in order to improve the overall heat dissipation capability of the structure, the thermal expansion coefficients of the insulating sheet 102 and the chip 201 can be matched, so that the heat dissipation performance of the insulating sheet 102 and the chip 201 is consistent, and the structure can be well dissipated.
In summary, in the cooling structure 100 with a heat dissipation channel provided in the embodiment of the present application, the plurality of metal heat dissipation fins 101 and the plurality of insulation sheets 102 are sequentially stacked, the insulation sheet 102 is disposed between two adjacent layers of metal heat dissipation fins 101, and the metal heat dissipation fins 101 are disposed between two adjacent layers of insulation sheets 102, so as to form a stacked structure. Meanwhile, in the first direction F1, a clamping space is formed between one side of the insulating sheet 102 and two adjacent metal heat dissipation sheets 101, the clamping space is used for clamping the chip 201, and the two sides of the chip 201 are simultaneously radiated by the metal heat dissipation sheets 101, so that the heat dissipation effect and the heat dissipation efficiency of the chip 201 are improved. The chip 201 and the insulating sheet 102 are arranged between two adjacent layers of metal radiating fins 101 side by side at intervals, a plurality of parallel micro-channels 103 are arranged on the metal radiating fins 101, heat radiating channels are formed by the micro-channels 103 and the intervals between the chip 201 and the insulating sheet 102, heat of the chip 201 is radiated from the heat radiating channels, and the heat radiating capacity of the chip 201 can be further improved through the heat radiating channels; furthermore, the chip 201 and the metal heat sink 101 are also welded by a plurality of welding structures 105, so that the welding structures 105 and the micro-channels 103 are arranged at intervals in order to keep the heat dissipation channels open, and the welding structures 105 cannot cover the micro-channels 103, so as to avoid hindering the heat dissipation efficiency of the chip 201. The thermal expansion coefficients of the insulating sheet 102 and the chip 201 are matched, so that the insulating sheet 102 and the chip 201 have the same heat dissipation performance, and the structure can be well dissipated.
In addition, the molybdenum-copper alloy has high thermal conductivity, so the metal heat sink 101 can be formed by using the molybdenum-copper alloy, and due to the isotropic corrosion property of molybdenum-copper, when the micro-channel 103 is formed, the micro-channel 103 with a certain depth-to-width ratio can be obtained by using a chemical corrosion method, which is beneficial to the heat dissipation effect of the structure. Moreover, the materials such as the molybdenum-copper radiating fins and the aluminum nitride ceramic plates can also reduce the cost of radiating materials, so that the cooling structure 100 with the radiating channel not only has the efficient radiating capacity, but also has low cost; the first metal layer and the second metal layer are respectively plated on the molybdenum-copper radiating fin and the aluminum nitride ceramic plate, so that the molybdenum-copper radiating fin and the aluminum nitride ceramic plate are good in welding strength and high in heat conduction performance, and the cooling structure 100 with the radiating channel is high in overall stability.
On the other hand, referring to fig. 6, an embodiment of the present application further discloses a laser diode package structure, which includes a plurality of laser bar chips 201 and the cooling structure 100 with a heat dissipation channel of the foregoing embodiment, where the plurality of laser bar chips 201 are respectively located in a clamping space between two adjacent metal heat sinks 101 of the cooling structure 100 with a heat dissipation channel, and located at a side of the metal heat sink 101 where the heat dissipation channel is located.
The laser bar chip 201 is located between two adjacent metal radiating fins 101, the laser bar chip 201 radiates heat through the metal radiating fins 101 on two sides, a gap is formed between the laser bar chip 201 and the insulating sheet 102 on the same layer, and the gap and the micro-channels 103 on the metal radiating fins 101 form a radiating channel, so that the laser bar chip 201 is further radiated, the radiating capacity of the structure is improved, and the laser diode packaging structure formed by the structure is good in radiating efficiency and high in radiating efficiency.
The laser diode package structure includes the same structure and advantageous effects as the cooling structure 100 having the heat dissipation channel in the foregoing embodiment. The structure and advantageous effects of the cooling structure 100 having the heat dissipation channel have been described in detail in the foregoing embodiments, and are not described in detail herein.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims (10)

1. A cooling structure having a heat dissipation channel, comprising: the metal cooling fin of a plurality of range upon range of settings, adjacent two-layer be equipped with the insulating piece between the metal cooling fin, the insulating piece is in one side adduction of first direction in order to be adjacent two-layer be formed with the centre gripping space between the metal cooling fin, the centre gripping space is used for pressing from both sides and establishes the chip, on the same floor the insulating piece with the chip is followed the first direction sets up side by side, the chip with the metal cooling fin with still be formed with heat dissipation channel between the insulating piece, first direction and range upon range of direction are perpendicular.
2. The cooling structure with heat dissipating channels as claimed in claim 1, wherein a space is provided between the chip and the insulating sheet in the same layer along the first direction, one side of the metal heat sink is provided with a plurality of parallel micro channels on both surfaces along the stacking direction, the micro channels extend along the first direction, the chip is located on the side where the micro channels are provided, and the coverage of the micro channels is larger than that of the chip, so that the micro channels communicate with the space to form the heat dissipating channels.
3. The cooling structure with the heat dissipation channel as set forth in claim 2, wherein the micro channel is a serration formed on both surfaces of the metal heat sink in the stacking direction, the serration extending in the first direction, starting ends of the serration being flush with ends of the chip and the metal heat sink, respectively, and a length of the micro channel is longer than a length of the chip.
4. The cooling structure with heat dissipating channels as claimed in claim 2, wherein the chip and the metal heat sink are connected by a plurality of solder structures, and a plurality of the solder structures and a plurality of the micro channels are arranged at intervals.
5. The cooling structure with heat dissipation channels as claimed in claim 1, wherein each of the metal fins is further provided with a first metal layer on both surfaces in the stacking direction, the chip and the insulating sheet being located on the first metal layer.
6. The cooling structure with heat dissipation channels as claimed in claim 5, wherein the metal heat sink is a molybdenum-copper heat sink, the first metal layer includes a gold layer and a tin layer sequentially disposed on a surface of the molybdenum-copper heat sink, and the chip and the insulation sheet are located on the tin layer.
7. The cooling structure with the heat dissipation channel as claimed in claim 1, wherein the insulating sheet is provided with a second metal layer on both surfaces in the stacking direction.
8. The cooling structure with heat dissipation channels as claimed in claim 1, wherein the insulating sheet is an aluminum nitride ceramic sheet, and the thermal expansion coefficients of the insulating sheet and the chip are matched.
9. The cooling structure with heat dissipation channels as claimed in claim 1, wherein a solder layer is provided between the insulating sheet and the metal heat sink.
10. A laser diode package structure, comprising a plurality of laser bar chips and the cooling structure with heat dissipation channel as claimed in any one of claims 1 to 9, wherein the plurality of laser bar chips are respectively located in the clamping space between two adjacent metal heat sinks of the cooling structure with heat dissipation channel and located at the side of the metal heat sink where the heat dissipation channel is located.
CN202121723954.7U 2021-07-27 2021-07-27 Cooling structure with heat dissipation channel and laser diode packaging structure Active CN215185001U (en)

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