CN215163120U - Graphite boat saturated film layer structure and graphite boat for PERC solar cell - Google Patents

Graphite boat saturated film layer structure and graphite boat for PERC solar cell Download PDF

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CN215163120U
CN215163120U CN202121290943.4U CN202121290943U CN215163120U CN 215163120 U CN215163120 U CN 215163120U CN 202121290943 U CN202121290943 U CN 202121290943U CN 215163120 U CN215163120 U CN 215163120U
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film
graphite boat
film layer
saturated
rete
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逯承承
赵小平
杨二存
时宝
林纲正
陈刚
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Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Technology Co Ltd
Tianjin Aiko Solar Energy Technology Co Ltd
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Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Technology Co Ltd
Tianjin Aiko Solar Energy Technology Co Ltd
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Abstract

The utility model discloses be suitable for solar cell processing technology field, provide a graphite boat that graphite boat saturated film layer structure and PERC solar cell used, including first rete, second rete and the third rete of deposit in proper order on the surface of graphite boat body, first rete is silicon carbide film or silicon nitride film, and the second rete is the aluminium oxide membrane, and the third rete is silicon carbide film or silicon nitride film. The utility model provides a graphite boat saturated film layer structure can make graphite boat surface electric field distribution more even, and makes graphite boat saturated film layer structure more stable to make silicon chip coating film homogeneity better, prevent that the problem of partial dark piece, black edge from appearing in the coating film silicon chip.

Description

Graphite boat saturated film layer structure and graphite boat for PERC solar cell
Technical Field
The utility model relates to a solar cell processing technology field, concretely relates to graphite boat that graphite boat saturated film layer structure and PERC solar cell used.
Background
The PERC solar cell film coating process is an indispensable part of a cell preparation process, and in the film coating process of the PERC solar cell, a silicon wafer needs to be placed in a graphite boat, and the graphite boat needs to be placed in PECVD equipment to carry out the film coating process on the silicon wafer. The condition of adopting PECVD method to carry out film coating is to make the deposition rate of the inner wall of the graphite boat and the surface of the silicon wafer consistent, and the factors for determining the rate mainly comprise temperature, electric field distribution and the flatness of the surface of the graphite boat.
In the prior art, in the process of processing a PERC solar cell, before a silicon wafer is coated, in order to make a graphite boat saturated and stable, a silicon carbide film is usually deposited on the surface of the graphite boat as a saturated film layer of the graphite boat, so that the graphite boat is in a saturated silicon carbide state, and thus the deposition rates of the graphite boat are consistent when the graphite boat is coated. However, the graphite boat is saturated and stable only by depositing the silicon carbide film on the surface of the graphite boat, and the poor conductivity of the silicon carbide can cause the uneven distribution of the electric field of the graphite boat, so that the uniformity of the film coating of the silicon wafer is poor, and the problem that the film coated silicon wafer is easy to have partial dark wafers and black edges is solved.
SUMMERY OF THE UTILITY MODEL
The utility model provides a graphite boat saturated film layer structure aims at solving the graphite boat saturated film layer among the prior art and only adopts silicon carbide film, and it is inhomogeneous to have graphite boat electric field distribution, leads to silicon chip coating film homogeneity poor, and the silicon chip after the coating film appears the problem on partial dark piece, black edge easily.
The utility model discloses a realize like this, provide a graphite boat saturation membrane layer structure, including first rete, second rete and the third rete of deposit in proper order on the surface of graphite boat body, first rete is carborundum film or silicon nitride film, the second rete is the alumina membrane, the third rete is carborundum film or silicon nitride film.
Preferably, the first film layer is a silicon carbide film, and the third film layer is a silicon nitride film.
Preferably, the thickness of the first film layer is 500-800 nm.
Preferably, the thickness of the first film layer is 670 nm.
Preferably, the thickness of the second film layer is 10-150 nm.
Preferably, the thickness of the second film layer is 40 nm.
Preferably, the thickness of the third film layer is 50-200 nm.
Preferably, the thickness of the third film layer is 100 nm.
Preferably, the graphite boat saturated film layer structure further comprises a fourth film layer deposited on the third film layer, and the fourth film layer is a silicon carbide film or a silicon nitride film.
The utility model also provides a graphite boat that PERC solar cell used, including graphite boat body, the surface deposition of graphite boat body has foretell graphite boat saturation film layer structure.
The utility model provides a pair of graphite boat saturation film layer structure is through setting up first rete, second rete and the third rete of deposiing in proper order on graphite boat surface, first rete is carborundum film or silicon nitride film, the second rete is the aluminium oxide membrane, the third rete is carborundum film or silicon nitride film, utilize the good electric conductivity of the aluminium oxide membrane of second rete, can make graphite boat surface electric field distribution more even, make silicon chip coating film homogeneity better, prevent that the silicon chip after the coating film from appearing the problem of partial dark piece, black edge easily; meanwhile, the first film layer and the third film layer which are silicon carbide films or silicon nitride films are used for protecting the aluminum oxide film, so that the aluminum oxide film is ensured to keep good conductive performance, the good stability of the silicon carbide films or the silicon nitride films is utilized, the structure of the graphite boat saturated film layer is not easy to be corroded and damaged by the outside, the structure of the graphite boat saturated film layer can be more stable, the deposition rates of all positions in the graphite boat tend to be consistent when the silicon wafers are coated, and the silicon wafers are further ensured to be coated more uniformly.
Drawings
Fig. 1 is a schematic structural diagram of a saturated film structure of a graphite boat according to a first embodiment of the present invention;
fig. 2 is a schematic structural diagram of a saturated film structure of a graphite boat according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The embodiment of the utility model provides a graphite boat saturation film layer structure is through setting up first rete, second rete and the third rete of deposiing in proper order on graphite boat surface, first rete is carborundum film or silicon nitride film, the second rete is the aluminium oxide membrane, the third rete is carborundum film or silicon nitride film, utilize the good electric conductivity of aluminium oxide membrane, can make graphite boat surface electric field distribution more even, make silicon chip coating film homogeneity better, prevent that the silicon chip after the coating film from appearing the problem of partial dark piece, black edge easily; meanwhile, the good stability of the silicon carbide film or the silicon nitride can be utilized to enable the structure of the saturated film layer of the graphite boat to be more stable, so that the deposition rates of the positions inside the graphite boat tend to be consistent when the silicon wafers are coated, and the silicon wafers are further ensured to be coated more uniformly.
Example one
Referring to fig. 1, an embodiment of the present invention provides a graphite boat saturated film structure, including a first film layer 11, a second film layer 12 and a third film layer 13 deposited on a surface of a graphite boat body 10 in sequence, where the first film layer 11 is a silicon carbide film or a silicon nitride film, the second film layer 12 is an aluminum oxide film, and the third film layer 13 is a silicon carbide film or a silicon nitride film.
The embodiment of the utility model provides an in, before the silicon chip utilized the graphite boat to carry out coating film process, first rete 11 for silicon carbide film or silicon nitride film, second rete 12 for aluminium oxide membrane, third rete 13 for silicon carbide film or silicon nitride film are deposited on graphite boat surface earlier, can make graphite boat surface everywhere all be the saturated membranous layer state like this. On one hand, the good conductivity of the aluminum oxide film of the second film layer 12 is utilized, so that the electric field distribution on the surface of the graphite boat is more uniform, the film coating uniformity of the silicon wafer is better, and the problems of partial dark wafers and black edges of the coated silicon wafer are prevented; on the other hand, the first film layer 11 and the third film layer 13 which are silicon carbide films or silicon nitride films are used for simultaneously protecting the aluminum oxide film, and the good stability of the silicon carbide films and the silicon nitride films is utilized, so that the structure of the graphite boat saturated film layer is not easy to be corroded and damaged by the outside, the structure of the graphite boat saturated film layer can be more stable, the change of the surface of the graphite boat is prevented, the deposition rates of all positions in the graphite boat tend to be consistent when the silicon wafers are coated, the silicon wafer coating is further ensured to be more uniform, partial dark sheets and black edges of the coated silicon wafers are prevented from being easily generated, and the situation that the battery efficiency is influenced or reworking is required due to the partial dark sheets and the black edges of the coated silicon wafers is avoided.
In a preferred embodiment of the present invention, the first film layer 11 is a silicon carbide film, and the third film layer 13 is a silicon nitride film.
In this embodiment, since silicon nitride is more stable than a silicon carbide film and an aluminum oxide film, the silicon nitride film is disposed on the outermost layer, so that the first film layer 11, the second film layer 12, and the third film layer 13 are the silicon carbide film, the aluminum oxide film, and the silicon nitride film in sequence, the silicon nitride film can be fully utilized to protect the aluminum oxide film and the silicon carbide film, the saturated film structure of the graphite boat is ensured not to be easily corroded and damaged by the outside, and the stability of the saturated film structure of the graphite boat is better; moreover, the silicon carbide and the aluminum oxide film can be more stably attached to the surface of the graphite boat by utilizing the better corrosion resistance of the silicon carbide and the aluminum oxide film; meanwhile, the silicon carbide film and the silicon nitride film are used for simultaneously protecting the aluminum oxide film, so that the aluminum oxide film keeps good conductivity, and the electric field distribution on the surface of the graphite boat is more uniform; moreover, because the saturated aluminum oxide film is deposited on the surface of the graphite boat, when the aluminum oxide film is deposited on the subsequent silicon wafer, the absorption of trimethyl aluminum and laughing gas for preparing the aluminum oxide film on the silicon wafer by the surface of the graphite boat is reduced, and the film coating efficiency of the silicon wafer can be improved.
As an embodiment of the present invention, the thickness of the first film layer 11 is 500-800 nm. Namely, the thickness of the silicon carbide film is 500 to 800 nm. Preferably, the thickness of the first film layer 11 is 670nm, which facilitates the processing of the first film layer 11 and ensures better corrosion resistance of the first film layer 11.
As an embodiment of the present invention, the thickness of the second film layer 12 is 10 to 150nm, i.e. the thickness of the aluminum oxide film is 10 to 150 nm. Preferably, the thickness of the second film layer 12 is 40nm, which facilitates processing of the aluminum oxide film and ensures better conductivity of the aluminum oxide film.
As an embodiment of the present invention, the thickness of the third film layer 13 is 50-200 nm, i.e. the thickness of the silicon nitride film is 50-200 nm, which is convenient for processing the silicon nitride film. Preferably, the thickness of the third film layer 13 is 100nm, which not only can make the third film layer 13 better protect the aluminum oxide film, but also can make the preparation time of the third film layer 13 shorter, and is convenient for processing.
The preparation method of the graphite boat saturated film structure of the embodiment specifically comprises the following steps:
placing a graphite boat in PECVD equipment, introducing silane and methane at the temperature of 450 ℃, and continuously discharging for 10000s to generate a first film layer 11 of a silicon carbide film on the surface of the graphite boat;
introducing trimethylaluminum and laughing gas, and continuously discharging for 300s to generate a second film layer 12 which is an aluminum oxide film on the first film layer 11;
silane and ammonia gas are introduced and the discharge is continued for 180s to generate a third film layer 13 as a silicon nitride film on the second film layer 12.
The steps of the preparation method of the graphite boat saturated film structure can be correspondingly adjusted according to the arrangement sequence of the films.
According to the graphite boat saturated film layer structure provided by the embodiment, the first film layer, the second film layer and the third film layer are sequentially deposited on the surface of the graphite boat, the first film layer is a silicon carbide film or a silicon nitride film, the second film layer is an aluminum oxide film, the third film layer is a silicon carbide film or a silicon nitride film, and by utilizing the good conductivity of the aluminum oxide film of the second film layer, the electric field distribution on the surface of the graphite boat can be more uniform, the film coating uniformity of a silicon wafer is better, and the problem that partial dark sheets and black edges are easy to occur on the coated silicon wafer is solved; meanwhile, the first film layer and the third film layer which are silicon carbide films or silicon nitride films are used for protecting the aluminum oxide film, so that the aluminum oxide film is ensured to keep good conductive performance, the good stability of the silicon carbide films or the silicon nitride films is utilized, the structure of the graphite boat saturated film layer is not easy to be corroded and damaged by the outside, the structure of the graphite boat saturated film layer can be more stable, the deposition rates of all positions in the graphite boat tend to be consistent when the silicon wafers are coated, and the silicon wafers are further ensured to be coated more uniformly.
Example two
Referring to fig. 2, in the first embodiment, the graphite boat saturated film structure may further include a fourth film 14 deposited on the third film 13, wherein the fourth film 14 is a silicon carbide film or a silicon nitride film. By depositing a silicon carbide film or a silicon nitride film on the third film 13, the alumina film is further protected by utilizing the good stability and corrosion resistance of the silicon carbide film or the silicon nitride film, and the structure of the saturated film of the graphite boat is more stable, so that the film coating uniformity of the silicon wafer is better.
As a preferred embodiment of the present invention, the thickness of the fourth film layer 14 is 50-200 nm, which ensures better protection of the alumina film.
EXAMPLE III
The utility model discloses this provide a graphite boat that PERC solar cell used, including graphite boat body 10, graphite boat body 10's surface deposition has the graphite boat saturated film layer structure of above-mentioned embodiment one or embodiment two.
In this embodiment, the graphite boat for the PERC solar cell forms the saturated film layer structure of the graphite boat in the first embodiment or the second embodiment by deposition, and the good conductivity of the alumina film is utilized, so that the electric field distribution on the surface of the graphite boat is more uniform, the film coating uniformity of the silicon wafer is better, and the problem that the coated silicon wafer is easy to have partial dark wafers and black edges is solved; meanwhile, the good stability of the silicon carbide film or the silicon nitride film is utilized, the structure of the saturated film layer of the graphite boat can be more stable, the change of the surface of the graphite boat is prevented, the deposition rates of the silicon wafers inside the graphite boat tend to be consistent when the silicon wafers are coated, the silicon wafers are further ensured to be coated more uniformly, and the appearance and the battery efficiency of the PERC solar battery obtained by coating the graphite boat are ensured to be better.
The above description is only exemplary of the present invention and should not be construed as limiting the present invention, and any modifications, equivalents and improvements made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.

Claims (10)

1. A graphite boat saturated film structure is characterized by comprising a first film, a second film and a third film which are deposited on the surface of a graphite boat body in sequence, wherein the first film is a silicon carbide film or a silicon nitride film, the second film is an aluminum oxide film, and the third film is a silicon carbide film or a silicon nitride film.
2. The graphite boat saturated film structure of claim 1, wherein the first film is a silicon carbide film and the third film is a silicon nitride film.
3. The graphite boat saturated film structure of claim 1, wherein the thickness of the first film is 500-800 nm.
4. The graphite boat saturated film structure of claim 3, wherein the thickness of the first film is 670 nm.
5. The graphite boat saturated film structure of claim 1, wherein the thickness of the second film is 10-150 nm.
6. The graphite boat saturated film structure of claim 5, wherein the thickness of the second film is 40 nm.
7. The graphite boat saturated film structure of claim 1, wherein the thickness of the third film is 50-200 nm.
8. The graphite boat saturated film structure of claim 7, wherein the third film has a thickness of 100 nm.
9. The graphite boat saturated film structure of claim 1, further comprising a fourth film deposited on the third film, wherein the fourth film is a silicon carbide film or a silicon nitride film.
10. A graphite boat for PERC solar battery, which comprises a graphite boat body, wherein the surface of the graphite boat body is deposited with the graphite boat saturated film layer structure as claimed in any one of claims 1 to 9.
CN202121290943.4U 2021-06-09 2021-06-09 Graphite boat saturated film layer structure and graphite boat for PERC solar cell Active CN215163120U (en)

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CN202121290943.4U CN215163120U (en) 2021-06-09 2021-06-09 Graphite boat saturated film layer structure and graphite boat for PERC solar cell

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