CN111883612A - Method for reducing scratches of tubular PECVD (plasma enhanced chemical vapor deposition) insert and film coating process adopting method - Google Patents
Method for reducing scratches of tubular PECVD (plasma enhanced chemical vapor deposition) insert and film coating process adopting method Download PDFInfo
- Publication number
- CN111883612A CN111883612A CN202010642024.2A CN202010642024A CN111883612A CN 111883612 A CN111883612 A CN 111883612A CN 202010642024 A CN202010642024 A CN 202010642024A CN 111883612 A CN111883612 A CN 111883612A
- Authority
- CN
- China
- Prior art keywords
- pecvd
- graphite boat
- tube
- plating
- silicon oxynitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000007888 film coating Substances 0.000 title claims abstract description 12
- 238000009501 film coating Methods 0.000 title claims abstract description 12
- 230000008569 process Effects 0.000 title abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 65
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 50
- 239000010439 graphite Substances 0.000 claims abstract description 50
- 238000007747 plating Methods 0.000 claims abstract description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- 238000010926 purge Methods 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000006748 scratching Methods 0.000 claims 2
- 230000002393 scratching effect Effects 0.000 claims 2
- 238000003780 insertion Methods 0.000 abstract description 5
- 230000037431 insertion Effects 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 abstract description 3
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Sealing Battery Cases Or Jackets (AREA)
Abstract
The invention relates to the technical field of new energy, in particular to a method for reducing scratches of a tubular PECVD (plasma enhanced chemical vapor deposition) insert and a film coating process adopting the method. A method for reducing scratches of a tubular PECVD (plasma enhanced chemical vapor deposition) insert comprises the following steps of putting an empty boat into a PECVD furnace tube, and plating a silicon oxynitride film on the graphite boat: the first step is as follows: the empty graphite boat enters a PECVD tube; the second step is that: purging the PECVD tube by using nitrogen to remove air in the PECVD tube; the third step: vacuumizing the PECVD tube; the fourth step: depositing silicon oxynitride; the fifth step: purging PECVD tube with nitrogenRemoving SiH in PECVD tube4/N2O gas; and a sixth step: and (4) withdrawing the graphite boat. The mode that the silicon oxynitride film is plated on the surface of the graphite boat as the barrier layer is adopted, so that the direct contact between the graphite boat and the silicon wafer is reduced, the scratch during the insertion is reduced, and the appearance of the battery piece is improved.
Description
Technical Field
The invention relates to the technical field of new energy, in particular to a method for reducing scratches of a tubular PECVD (plasma enhanced chemical vapor deposition) insert and a film coating process adopting the method.
Background
PECVD (Plasma Enhanced Chemical Vapor Deposition) is a method of ionizing a gas containing film constituent atoms by means of microwave or radio frequency, etc., to locally form a Plasma, which is chemically very active and easily reacts to deposit a desired film on a substrate. In order to allow chemical reactions to proceed at lower temperatures, the reactivity of the plasma is exploited to promote the reactions, and thus such CVD is known as Plasma Enhanced Chemical Vapor Deposition (PECVD). The experimental mechanism is that gas containing film constituent atoms forms plasma locally by means of microwave or radio frequency, and the plasma has strong chemical activity and is easy to react, and a desired film is deposited on a substrate.
Two batteries with better benefits in the industry at present are a PERC battery and an N-type double-sided battery, and the front and the back of the two batteries are passivated, so that the surface recombination is greatly reduced, and the conversion efficiency of the batteries is improved. Both sides of the PERC battery and the N-type double-sided battery need to be coated with dielectric films, and at the present stage, the tubular PECVD is widely applied to coating of solar batteries as the most mature coating mode at present. Due to the limitation of the structure of the tubular PECVD, the two-time coating needs to be assembled and disassembled for four times, namely the surface of the silicon wafer needs to be contacted with the graphite boat for four times, so that the probability of scratches on the surface of the silicon wafer is greatly increased.
Ott si wei energy (taicang) limited company discloses a tubular PECVD graphite boat structure, including the boat piece, the boat piece includes a plurality of fretwork regions, is equipped with the inside edge face that colludes some and this fretwork region that is used for blocking the silicon chip around the fretwork region and is the smooth surface, and the coating film in-process, the silicon chip hug closely the boat piece card on this fretwork region, and this utility model discloses polish the polishing with the inside edge face in fretwork region and form the smooth surface, when operating personnel in loading and unloading silicon chip, effectively reduced the coefficient of friction of silicon chip with the boat piece, reach the purpose of avoiding the silicon chip damage. The method requires modification of the equipment and is relatively complex.
Disclosure of Invention
The invention aims to provide a method for reducing scratches of a tubular PECVD insert, which is mainly characterized in that a layer of silicon oxynitride is plated on the surface of a graphite boat, so that direct contact between graphite and a silicon wafer is avoided, normal film coating is not influenced, scratches during insert are reduced, and the appearance of a battery piece is improved.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a method for reducing scratches of a tubular PECVD (plasma enhanced chemical vapor deposition) insert comprises the following steps of putting an empty boat into a PECVD furnace tube, and plating a silicon oxynitride film on the graphite boat:
the first step is as follows: the empty graphite boat enters a PECVD tube;
the second step is that: purging the PECVD tube by using nitrogen to remove air in the PECVD tube (the air can affect film coating);
the third step: vacuumizing the PECVD tube;
the fourth step: depositing silicon oxynitride;
the fifth step: purging the PECVD pipe by using nitrogen to remove SiH in the PECVD pipe4/ N2O gas;
and a sixth step: and (4) withdrawing the graphite boat.
At present, a graphite boat is adopted in the PECVD process in the industry, and when the graphite boat is inserted with the silicon wafer, friction exists between the silicon wafer and the graphite boat. Both sides of the PERC battery and the N-type double-sided battery need to be coated with dielectric films, and silicon nitride on the other coated side can be scratched during secondary insertion, so that the electrical performance parameters of the battery and the appearance of the battery are influenced.
The friction coefficient between graphite and graphite is 0.1, the friction coefficient between silicon nitride of silicon nitride can reach 0.02 at least, and the silicon oxynitride is similar to the silicon nitride material. The friction coefficient between silicon nitride and silicon oxynitride is about 0.02, which is lower than the friction coefficient between graphite and silicon nitride by 0.08. According to the invention, the silicon oxynitride film is plated on the surface of the graphite boat, so that direct contact between graphite and a silicon wafer is avoided, normal film plating is not influenced, scratches during insertion are reduced, and the appearance of the battery piece is improved.
Preferably, in the fourth step, the parameters of the step of depositing silicon oxynitride by using PECVD equipment in the process are set as follows:
film coating temperature: 450 ℃ and 475 ℃; coating time: 600-700 s;
gas flow rate: SiH4：350-450sccm，N2O：4500-5000sccm；
Pressure: 1800-; power: 5800 and 6500W.
Preferably, the thickness of the silicon oxynitride film on the surface of the graphite boat is 50-60 nm.
A coating process for plating silicon nitride on the surface of a silicon wafer by adopting the method comprises the following specific processes:
a. plating the boat: placing the empty graphite boat into a PECVD furnace tube, and plating a silicon oxynitride film on the graphite boat by the method;
b. inserting sheets: inserting the silicon wafer plated with the aluminum oxide into a graphite boat to prepare for plating a silicon nitride film on the surface of the silicon wafer;
c. silicon nitride film plating: and operating a coating process to plate silicon nitride on the surface of the silicon wafer.
Compared with the prior art, the invention has the beneficial effects that:
1. the mode that the silicon oxynitride film is plated on the surface of the graphite boat as the barrier layer is adopted, so that the direct contact between the graphite boat and the silicon wafer is reduced, the scratch during the insertion is reduced, and the appearance of the battery piece is improved;
2. according to the deposition process for plating the silicon oxynitride film on the surface of the graphite boat, the scratch of the silicon wafer generated in the process of inserting the silicon wafer is reduced by reducing the friction between the silicon wafer and the graphite boat.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
Fig. 1 is a process flow diagram of a specific embodiment of a method for reducing scratches of a tubular PECVD insert according to the present invention.
Detailed Description
The technical solution of the present invention will be further specifically described below by way of specific examples. It is to be understood that the practice of the invention is not limited to the following examples, and that any variations and/or modifications may be made thereto without departing from the scope of the invention.
In the present invention, all parts and percentages are by weight, unless otherwise specified, and the equipment and materials used are commercially available or commonly used in the art. The methods in the following examples are conventional in the art unless otherwise specified.
The following embodiments are described by using PECVD equipment provided by Shenzhen Jijiawei creative microelectronic equipment Limited.
The core of the invention is to provide a method for reducing scratches of a tubular PECVD insert, the process flow chart of one specific embodiment of the method is shown in figure 1, which is called as a first specific embodiment, the method mainly comprises the steps of putting an empty boat into a PECVD furnace tube, and plating a silicon oxynitride film on the graphite boat, and the method comprises the following steps:
the first step is as follows: the empty graphite boat enters a PECVD tube;
the second step is that: purging the PECVD tube by using nitrogen to remove air in the PECVD tube (the air can affect film coating);
the third step: vacuumizing the PECVD tube;
the fourth step: depositing silicon oxynitride;
the parameters of the step of depositing the silicon oxynitride by adopting the PECVD equipment are set as follows:
film coating temperature: 450 ℃ and 475 ℃; coating time: 600-700 s;
gas flow rate: SiH4：350-450sccm，N2O：4500-5000sccm；
Pressure: 1800-; power: 5800 and 6500W;
the fifth step: by usingPurging the PECVD pipe by nitrogen to remove SiH in the PECVD pipe4/ N2O gas (because the gas is harmful to human body, the furnace tube is opened next step and the graphite boat is withdrawn, so SiH is avoided4/ N2Diffusion of O gas into air);
and a sixth step: and (4) withdrawing the graphite boat.
The thickness of the silicon oxynitride film deposited on the surface of the graphite boat by the method is 50-60 nm.
On the basis of the first embodiment, the method for depositing silicon oxynitride in the fourth step is further limited to obtain a second embodiment, and the difference between the second embodiment and the first embodiment is that the parameters of the step of depositing silicon oxynitride by using PECVD equipment are set as follows:
film coating temperature: 460 ℃; coating time: 600 s;
gas flow rate: SiH4：380sccm，N2O：4800sccm；
Pressure: 1800 mTorr; power: 5800W;
the best parameters for depositing the silicon oxynitride are specifically defined in this embodiment, and the remaining steps are the same as those in the above embodiment, and are not further described herein. According to the deposition process for plating the silicon oxynitride film on the surface of the graphite boat, the scratch of the silicon wafer generated in the process of inserting the wafer is reduced by reducing the friction between the silicon wafer and the graphite boat.
The thickness of the silicon oxynitride film on the surface of the graphite boat deposited by the method in the embodiment is as follows: and 55 nm.
Application example 1
The invention relates to a coating process for plating silicon nitride on the surface of a silicon wafer by adopting the method, which comprises the following specific steps:
1. plating the boat: placing the empty graphite boat into a PECVD furnace tube, and plating a silicon oxynitride film on the graphite boat by the method;
2. inserting sheets: inserting the silicon wafer plated with the ALD into a graphite boat to prepare for plating a silicon nitride film on the surface of the silicon wafer;
3. silicon nitride film plating: and operating a coating process to plate silicon nitride on the surface of the silicon wafer.
Compared with the conventional method for reducing the scratch of the tubular PECVD insert, the method has the following advantages:
1. the mode that the silicon oxynitride film is plated on the surface of the graphite boat as the barrier layer is adopted, so that the direct contact between the graphite boat and the silicon wafer is reduced, the scratch during the insertion is reduced, and the appearance of the battery piece is improved;
2. according to the deposition process for plating the silicon oxynitride film on the surface of the graphite boat, the scratch of the silicon wafer generated in the process of inserting the silicon wafer is reduced by reducing the friction between the silicon wafer and the graphite boat.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The method for reducing the scratches of the tubular PECVD insert provided by the invention is described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (4)
1. A method for reducing scratches of a tubular PECVD (plasma enhanced chemical vapor deposition) insert is characterized in that the method mainly comprises the following steps of putting an empty boat into a PECVD furnace tube and plating a silicon oxynitride film on the graphite boat:
the first step is as follows: the empty graphite boat enters a PECVD tube;
the second step is that: purging the PECVD tube by using nitrogen to remove air in the PECVD tube (the air can affect film coating);
the third step: vacuumizing the PECVD tube;
the fourth step: depositing silicon oxynitride;
the fifth step: purging the PECVD pipe by using nitrogen to remove SiH in the PECVD pipe4/ N2O gas;
and a sixth step: and (4) withdrawing the graphite boat.
2. The method for reducing scratching of a tubular PECVD insert as recited in claim 1, wherein: in the fourth step, the parameters of the step of depositing the silicon oxynitride by adopting the PECVD equipment are set as follows:
film coating temperature: 450 ℃ and 475 ℃; coating time: 600-700 s;
gas flow rate: SiH4：350-450sccm，N2O：4500-5000sccm；
Pressure: 1800-; power: 5800 and 6500W.
3. The method for reducing scratching of a tubular PECVD insert as recited in claim 1, wherein: the thickness of the silicon oxynitride film on the surface of the graphite boat is 50-60 nm.
4. A coating process for plating silicon nitride on the surface of a silicon wafer by adopting the method of claim 1, which comprises the following specific steps:
a. plating the boat: placing the empty graphite boat into a PECVD furnace tube, and plating a silicon oxynitride film on the graphite boat by the method;
b. inserting sheets: inserting the silicon wafer after being plated with the aluminum oxide into a graphite boat to prepare for plating a silicon nitride film on the surface of the silicon wafer;
c. silicon nitride film plating: and operating a coating process to plate silicon nitride on the surface of the silicon wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010642024.2A CN111883612A (en) | 2020-07-06 | 2020-07-06 | Method for reducing scratches of tubular PECVD (plasma enhanced chemical vapor deposition) insert and film coating process adopting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010642024.2A CN111883612A (en) | 2020-07-06 | 2020-07-06 | Method for reducing scratches of tubular PECVD (plasma enhanced chemical vapor deposition) insert and film coating process adopting method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111883612A true CN111883612A (en) | 2020-11-03 |
Family
ID=73150177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010642024.2A Pending CN111883612A (en) | 2020-07-06 | 2020-07-06 | Method for reducing scratches of tubular PECVD (plasma enhanced chemical vapor deposition) insert and film coating process adopting method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111883612A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114038937A (en) * | 2021-10-09 | 2022-02-11 | 天合光能(宿迁)光电有限公司 | Graphite boat saturation process for improving click printing of perc single crystal battery |
-
2020
- 2020-07-06 CN CN202010642024.2A patent/CN111883612A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114038937A (en) * | 2021-10-09 | 2022-02-11 | 天合光能(宿迁)光电有限公司 | Graphite boat saturation process for improving click printing of perc single crystal battery |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9893215B2 (en) | Method for manufacturing a solar cell with a surface-passivating dielectric double layer, and corresponding solar cell | |
| US9748093B2 (en) | Pulsed nitride encapsulation | |
| Sinha et al. | Lorentz‐Lorenz correlation for reactively plasma deposited Si‐N films | |
| JP4401290B2 (en) | Oxide film forming method and electronic device material manufacturing method | |
| CN108695408B (en) | Tubular PECVD (plasma enhanced chemical vapor deposition) silicon nitride laminated antireflection film process | |
| JP2010205854A (en) | Method of manufacturing semiconductor device | |
| CN112652681A (en) | PERC solar cell back passivation film, preparation method thereof and PERC solar cell | |
| JP4126165B2 (en) | Multi-deposition SACVD reactor | |
| WO2014052747A2 (en) | Methods and structures for forming and protecting thin films on substrates | |
| CN110416363B (en) | Front passivation technology matched with alkali polishing selectivity emitter | |
| WO2023124046A1 (en) | Tunneling oxide layer, n-type double-sided solar crystalline silicon battery, and preparation methods | |
| CN104465879B (en) | A kind of passivation on double surfaces method of solar cell | |
| CN109004038A (en) | Solar battery and preparation method thereof and photovoltaic module | |
| WO2023202132A1 (en) | Solar cell and manufacturing method therefor | |
| EP4220741A1 (en) | Solar cell, alox coating method therefor, cell back surface passivation structure, and method | |
| CN111883612A (en) | Method for reducing scratches of tubular PECVD (plasma enhanced chemical vapor deposition) insert and film coating process adopting method | |
| CN111293189A (en) | Tunneling oxidation method based on horizontally placed LPCVD (low pressure chemical vapor deposition) equipment | |
| US7638437B2 (en) | In-situ thin-film deposition method | |
| CN116613244A (en) | Solar cell passivation layer preparation method and solar cell | |
| CN113913791B (en) | Preparation method of multilayer amorphous silicon film and solar cell | |
| TW202312512A (en) | Pre-coating method for improving dust in reaction cavity and pre-coating film formed by pre-coating method | |
| CN114551640A (en) | Solar cell manufacturing method and solar cell | |
| CN115181958A (en) | Method for carrying out pre-coating treatment on PECVD (plasma enhanced chemical vapor deposition) equipment and coating method of silicon wafer | |
| CN209880634U (en) | Back passivation structure of solar cell | |
| CN107507762B (en) | A method of it improving silicon nitride film and is rich in hydrogen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 314416 89 Yuanhong Road, Yuanhua Town, Haining City, Jiaxing, Zhejiang Applicant after: Jingke energy (Haining) Co.,Ltd. Applicant after: ZHEJIANG JINKO SOLAR Co.,Ltd. Address before: 314416 89 Yuanhong Road, Yuanhua Town, Haining City, Jiaxing, Zhejiang Applicant before: JINGKE ENERGY TECHNOLOGY (HAINING) Co.,Ltd. Applicant before: ZHEJIANG JINKO SOLAR Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201103 |
|
| RJ01 | Rejection of invention patent application after publication |