CN209636315U - Graphite boat and Tubular PECVD device with the graphite boat - Google Patents
Graphite boat and Tubular PECVD device with the graphite boat Download PDFInfo
- Publication number
- CN209636315U CN209636315U CN201822057002.0U CN201822057002U CN209636315U CN 209636315 U CN209636315 U CN 209636315U CN 201822057002 U CN201822057002 U CN 201822057002U CN 209636315 U CN209636315 U CN 209636315U
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- China
- Prior art keywords
- graphite boat
- silicon wafer
- hollow
- out parts
- plated film
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 82
- 239000010439 graphite Substances 0.000 title claims abstract description 82
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 72
- 239000010703 silicon Substances 0.000 claims abstract description 72
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000005484 gravity Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 49
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Abstract
The utility model provides a kind of graphite boat and Tubular PECVD device, it is related to solar battery plated film field, graphite boat includes multiple horizontal positioned graphite boat pieces spaced along the vertical direction, and each graphite boat piece is equipped at least one hollow-out parts to fixed silicon wafer；After silicon wafer is fixed on hollow-out parts, on the one hand, the front and the back side of each silicon wafer in graphite boat are unobstructed, in plated film, plasma can be respectively deposited at the front and the back side of silicon wafer, realize silicon wafer front and the back side simultaneously plated film, plated film time is reduced, can be improved production capacity；Meanwhile compared to existing graphite boat, graphite boat in the utility model to it is silicon chip film-coated when, do not need to carry out flaps processing, slotting silicon wafer scratch caused by the edge of silicon wafer can be effectively reduced repeatedly；On the other hand, silicon wafer is in horizontal positioned, when carrying out plasma-deposited, reduces plated film color difference caused by the film thickness difference for causing silicon wafer upper and lower ends to deposit because of gravity factor.
Description
Technical field
The utility model relates to solar battery plated film fields, more particularly to one kind can make the positive back side of silicon wafer while plate
Film and the uniform graphite boat of plated film and the Tubular PECVD device with the graphite boat.
Background technique
Currently, since silicon has reserves extremely abundant in the earth's crust, while crystal silicon solar energy battery is compared to others
Solar battery has excellent electric property and mechanical performance, therefore, crystal silicon solar energy battery photovoltaic art in occupation of
Consequence.
The manufacture of PERC double-sided solar battery is needed by following 8 procedure: making herbs into wool, diffusion, etching, back are passivated, just
Back side coating film, silk-screen printing, sintering, annealing.Wherein, positive back side coating film process is using plasma reinforced chemical vapour deposition
(PECVD) method is in silicon chip surface silicon nitride film, to reduce sunlight reflection and play passivation to silicon chip surface.
For tubular type PECVD relative to board-like PECVD, the design window of film layer structure is big, and positive antireflective and the back side increase reflection
Film effect is more excellent, and tubular type PEVCD has better passivation effect, is increasingly becoming hot technology.
Currently, the graphite boat that tubular type PECVD is used can only carry out coating single side, if to realize that double-sided coating is needed complete
At graphite boat is taken out after a face plated film, simultaneously turn-over carries out the plating other side again, cools down in the process and turn-over affects production capacity again, increase
The abrasive risk of silicon wafer is added；And silicon wafer is placed vertically in graphite boat, is fixed using metal card point, silicon chip edge after plated film
There are stuck point traces, influence front appearance, meanwhile, silicon wafer is placed vertically, heavy carrying out plasma due to being influenced by gravity
When product, the film thickness of silicon wafer upper and lower ends deposition is different, often results in plated film color difference.
In view of this, it is necessary to provide a kind of new graphite boat and the Tubular PECVD device with the graphite boat is to solve
The above problem.
Utility model content
The purpose of this utility model is to provide the positive back side while plated film and the uniform stones of plated film that one kind can make silicon wafer
Mo Zhou and Tubular PECVD device with the graphite boat.
To realize above-mentioned purpose of utility model, the utility model adopts the following technical solution: a kind of graphite boat, for two-sided
Plated film, the graphite boat include multiple horizontal positioned graphite boat pieces spaced along the vertical direction, each graphite boat
On piece is equipped at least one hollow-out parts to fixed silicon wafer.
As the further improved technical solution of the utility model, the inner peripheral of each hollow-out parts is equipped with for fixing
The fixed station of silicon wafer.
As the further improved technical solution of the utility model, the fixed station be from the upper peripheral edges of the hollow-out parts to
It extends to form down and to the inclination of the center of the hollow-out parts.
As the further improved technical solution of the utility model, the tilt angle of the fixed station is 15 ° -75 °.
As the further improved technical solution of the utility model, the graphite boat further includes the adjacent graphite boat piece of connection
Ceramic ring.
As the further improved technical solution of the utility model, a connection in two adjacent graphite boat pieces is just
Pole, another connection cathode.
As the further improved technical solution of the utility model, the quantity of hollow-out parts is extremely in each graphite boat piece
Few two, at least two hollow-out parts along the graphite boat piece length direction side by side and interval setting.
To realize the purpose of this utility model, the utility model also provides a kind of Tubular PECVD device, including above-mentioned graphite
Boat.
The beneficial effects of the utility model are: in graphite boat in the utility model, by the graphite boat in the graphite boat
Piece is horizontal positioned, and, each graphite boat piece is equipped at least one hollow-out parts to fixed silicon wafer, consolidates by silicon wafer
After the hollow-out parts, on the one hand, the front and the back side of each silicon wafer in the graphite boat are unobstructed,
In plated film, plasma can be respectively deposited at the front and the back side of the silicon wafer, realize the front and the back side of the silicon wafer
Plated film simultaneously, reduces plated film time, can be improved production capacity, the production especially suitable for double-side cell；Meanwhile compared to existing
Graphite boat, graphite boat in the utility model to it is described silicon chip film-coated when, do not need to carry out flaps processing, can effectively reduce
Repeatedly abraded caused by slotting edge of the silicon wafer the silicon wafer；On the other hand, the silicon wafer is carrying out plasma in being horizontally arranged
When body deposits, plated film color difference caused by the film thickness difference for causing silicon wafer upper and lower ends to deposit because of gravity factor is reduced.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the graphite boat in the utility model.
Fig. 2 is the structural schematic diagram of a graphite boat piece in graphite boat shown in FIG. 1.
Specific embodiment
The utility model is described in detail below with reference to each embodiment shown in the drawings, please refers to Fig. 1 to Fig. 2
It is shown, it is the better embodiment of the utility model, but it should be stated that, these embodiments are not to the utility model
Limitation, those of ordinary skill in the art according to these embodiments made by equivalent transformation in function, method or structure or
Substitution, belongs within the protection scope of the utility model.
Upper and lower wait in the utility model is the explanation carried out by taking attached drawing as an example to the description in direction or position, but root
According to needing that change can also be made, made change is included in the protection scope of the present invention.
It please join shown in Fig. 1 to Fig. 2, the utility model provides a kind of graphite boat 100, tubular type PECVD plated film is used for, to silicon
The front and the back side of piece plated film simultaneously, reduce plated film time, improve production capacity.
The graphite boat 100 includes multiple horizontal positioned graphite boat pieces 1 spaced along the vertical direction, each described
Graphite boat piece 1 is equipped at least one hollow-out parts 11 to fixed silicon wafer, after silicon wafer to be fixed on to the hollow-out parts 11, one
Aspect, the front and the back side of each silicon wafer in the graphite boat 100 are unobstructed, in plated film, plasma
Body can be respectively deposited at the front and the back side of the silicon wafer, realize the silicon wafer front and the back side simultaneously plated film, reduce
Plated film time can be improved production capacity, the production especially suitable for double-side cell；Meanwhile compared to existing graphite boat, this is practical
Graphite boat 100 in novel to it is described silicon chip film-coated when, do not need to carry out flaps processing, slotting silicon wafer pair can be effectively reduced repeatedly
It is abraded caused by the edge of the silicon wafer；On the other hand, the silicon wafer is in horizontal positioned, when carrying out plasma-deposited
It waits, reduces plated film color difference caused by the film thickness difference for causing silicon wafer upper and lower ends to deposit because of gravity factor.
Further, the inner peripheral of each hollow-out parts 11 is equipped with the fixed station 111 for fixing silicon wafer, will be described
Silicon wafer is fixed in the hollow-out parts 11, keeps the front for the silicon wafer being located in the hollow-out parts 11 and the back side unobstructed, just
In the front of silicon wafer and the back side while plated film.
In present embodiment, the fixed station 111 is from the upper peripheral edges of the hollow-out parts 11 downwards and to the hollow out
The center inclination in portion extends to form, to solve the fixed adverse effect to plating film uniformity of stuck point in the prior art.Certainly,
In his embodiment, the fixed station 111 may be set to be the stuck point of the inner peripheral set on the hollow-out parts 11, as long as can
It realizes and the silicon wafer is fixed on the hollow-out parts 11.
It is understood that being from the upper peripheral edges of the hollow-out parts 11 downwards and to the hollow out in the fixed station 111
In the embodiment that the center inclination in portion extends to form, the fixed station 111 is the inner peripheral of the hollow-out parts 11, described to engrave
Empty portion 11 is in inverted trapezoidal, after the silicon wafer is placed in the hollow-out parts 11, the periphery of the silicon wafer and the hollow-out parts 11
Inner peripheral completely attaches to, and silicon wafer adjacent along the vertical direction can be used as electrode and carry out conduction.
Hollow-out parts 11 in the graphite boat 100 all pile silicon wafer, meanwhile, in two adjacent graphite boat pieces 1
One connection anode, another connection cathode, and after positive electrode and negative electrode connection AC power source, go out between adjacent graphite boat piece 1
Show alternating electric field, the reaction gas between adjoining graphite boat piece 1 is ionized to negative ions, work of the negative ions in alternating electric field
Under, alternating deposit to silicon chip surface forms silicon nitride film layer.
Specifically, the tilt angle of the fixed station 111 is 15 ° -75 °, phase can be selected according to the specific size of silicon wafer
The tilt angle answered enhances institute as long as can guarantee that the periphery of silicon wafer and the inner peripheral of the hollow-out parts 11 completely attach to
State the versatility of graphite boat piece 1.
Further, the graphite boat 100 further includes the ceramic ring 2 of the adjacent graphite boat piece 1 of connection, on the one hand, makes phase
It insulate between adjacent graphite boat piece 1, can be avoided positive electrode and negative electrode short circuit；On the other hand, between making between adjacent graphite boat piece 1
Every setting, reaction gas can be made to pass through between two connected graphite boat pieces 1, meanwhile, it is capable to adjacent when controlling plated film
Electric field strength between graphite boat piece 1.
Further, the quantity of hollow-out parts 11 is at least two in each graphite boat piece 1, thus, a graphite boat
Multiple silicon wafers can be carried on piece 1 simultaneously, makes multiple silicon wafers plated film simultaneously, increases production capacity.
It is understood that the quantity of the hollow-out parts 11 in each graphite boat piece 1 can carry out according to the actual situation
Adjustment, can satisfy demand.
Meanwhile at least two the hollow-out parts 11 along be arranged the hollow-out parts 11 graphite boat piece 1 length direction side by side and
Interval setting, in order to which silicon wafer is placed in hollow-out parts 11 by guide card machine.
The utility model also provides a kind of Tubular PECVD device, including above-mentioned graphite boat 100.
Compared with prior art, in the graphite boat 100 in the utility model, by the graphite boat piece 1 in the graphite boat 100
It is horizontal positioned, and, each graphite boat piece 1 is equipped at least one hollow-out parts 11 to fixed silicon wafer, by silicon wafer
After being fixed on the hollow-out parts 11, on the one hand, the front and the back side of each silicon wafer in the graphite boat 100 are equal
Unobstructed, in plated film, plasma can be respectively deposited at the front and the back side of the silicon wafer, realize the front of the silicon wafer
And the back side simultaneously plated film, reduce plated film time, can be improved production capacity, the production especially suitable for double-side cell；Meanwhile it comparing
Graphite boat 100 in existing graphite boat, the utility model to it is described silicon chip film-coated when, do not need to carry out flaps processing, can
To effectively reduce repeatedly slotting silicon wafer scratch caused by the edge of the silicon wafer；On the other hand, the silicon wafer is in horizontal positioned, In
When carrying out plasma-deposited, plated film caused by the film thickness difference for causing silicon wafer upper and lower ends to deposit because of gravity factor is reduced
Color difference.
It should be appreciated that although this specification is described in terms of embodiments, but not each embodiment only includes one
A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say
As a whole, the technical solution in each embodiment may also be suitably combined to form those skilled in the art can for bright book
With the other embodiments of understanding.
Tool of the series of detailed descriptions listed above only for the feasible embodiment of the utility model
Body explanation, they are all without departing from made by the utility model skill spirit not to limit the protection scope of the utility model
Equivalent implementations or change should be included within the scope of protection of this utility model.
Claims (5)
1. a kind of graphite boat is used for double-sided coating, it is characterised in that: the graphite boat includes spaced along the vertical direction more
A horizontal positioned graphite boat piece, each graphite boat piece are equipped at least one hollow-out parts to fixed silicon wafer；It is each
The inner peripheral of the hollow-out parts is equipped with fixed station for fixing silicon wafer, the fixed station be from the upper peripheral edges of the hollow-out parts to
It extends to form down and to the inclination of the center of the hollow-out parts, the tilt angle of the fixed station is 15 ° -75 °.
2. graphite boat as described in claim 1, it is characterised in that: the graphite boat further includes the adjacent graphite boat piece of connection
Ceramic ring.
3. graphite boat as described in claim 1, it is characterised in that: the connection anode in two adjacent graphite boat pieces,
Another connection cathode.
4. graphite boat as described in claim 1, it is characterised in that: the quantity of hollow-out parts is at least in each graphite boat piece
Two, at least two hollow-out parts along the graphite boat piece length direction side by side and interval setting.
5. a kind of Tubular PECVD device, it is characterised in that: including the graphite boat as described in any one of Claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822057002.0U CN209636315U (en) | 2018-12-07 | 2018-12-07 | Graphite boat and Tubular PECVD device with the graphite boat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822057002.0U CN209636315U (en) | 2018-12-07 | 2018-12-07 | Graphite boat and Tubular PECVD device with the graphite boat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209636315U true CN209636315U (en) | 2019-11-15 |
Family
ID=68473631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822057002.0U Expired - Fee Related CN209636315U (en) | 2018-12-07 | 2018-12-07 | Graphite boat and Tubular PECVD device with the graphite boat |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209636315U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111471982A (en) * | 2020-05-28 | 2020-07-31 | 苏州拓升智能装备有限公司 | Substrate carrier, substrate carrier array and vapor deposition apparatus and method of using the same |
| CN111471983A (en) * | 2020-05-28 | 2020-07-31 | 苏州拓升智能装备有限公司 | Substrate carrier, substrate carrier array and vapor deposition apparatus |
| CN113430503A (en) * | 2021-07-15 | 2021-09-24 | 大连连城数控机器股份有限公司 | Tubular PECVD graphite boat structure capable of plating multiple films |
| CN113584462A (en) * | 2021-07-15 | 2021-11-02 | 大连连城数控机器股份有限公司 | Tubular PECVD graphite boat coating process capable of coating multiple films |
-
2018
- 2018-12-07 CN CN201822057002.0U patent/CN209636315U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111471982A (en) * | 2020-05-28 | 2020-07-31 | 苏州拓升智能装备有限公司 | Substrate carrier, substrate carrier array and vapor deposition apparatus and method of using the same |
| CN111471983A (en) * | 2020-05-28 | 2020-07-31 | 苏州拓升智能装备有限公司 | Substrate carrier, substrate carrier array and vapor deposition apparatus |
| CN113430503A (en) * | 2021-07-15 | 2021-09-24 | 大连连城数控机器股份有限公司 | Tubular PECVD graphite boat structure capable of plating multiple films |
| CN113584462A (en) * | 2021-07-15 | 2021-11-02 | 大连连城数控机器股份有限公司 | Tubular PECVD graphite boat coating process capable of coating multiple films |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI Cells Co.,Ltd. Patentee after: Atlas sunshine Power Group Co.,Ltd. Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee before: CSI Cells Co.,Ltd. Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191115 |