CN113430503A - Tubular PECVD graphite boat structure capable of plating multiple films - Google Patents
Tubular PECVD graphite boat structure capable of plating multiple films Download PDFInfo
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- CN113430503A CN113430503A CN202110801121.6A CN202110801121A CN113430503A CN 113430503 A CN113430503 A CN 113430503A CN 202110801121 A CN202110801121 A CN 202110801121A CN 113430503 A CN113430503 A CN 113430503A
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 17
- 239000010439 graphite Substances 0.000 title claims abstract description 17
- 238000007747 plating Methods 0.000 title abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 74
- 238000000576 coating method Methods 0.000 claims abstract description 74
- 239000007789 gas Substances 0.000 claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 239000007888 film coating Substances 0.000 claims abstract description 19
- 238000009501 film coating Methods 0.000 claims abstract description 19
- 239000011261 inert gas Substances 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims description 14
- 238000005192 partition Methods 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 17
- 230000002829 reductive effect Effects 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 6
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 6
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Abstract
The invention provides a tubular PECVD graphite boat structure capable of plating multiple films, which comprises a plurality of boat sheets stacked in sequence; the boat piece is provided with a plurality of hollow areas, the hollow areas are used for mounting silicon chips, and at least one hook point for clamping the silicon chips is arranged around the hollow areas; after the silicon chip is installed in the hollow area, an independent and closed film coating channel is formed between two adjacent boat pieces, the extending direction of the film coating channel is parallel to the length direction of the boat pieces, and two ends of each boat piece in the length direction are respectively provided with an air inlet hole and an air outlet hole which are communicated with the film coating channel; and coating gas or inert gas is introduced into the coating channel. According to the invention, a single device can be coated with various films, so that the rewinding time is saved, the scratch in the rewinding process is reduced, and the yield is improved. Meanwhile, the film coating process is prevented from being exposed in the air, and the pollution is reduced.
Description
Technical Field
The invention relates to the technical field of photovoltaic cell tool fixtures, in particular to a tubular PECVD graphite boat structure capable of being plated with multiple films.
Background
Increasing efficiency, yield, and reducing cost have been efforts in the photovoltaic industry. The efficiency of the current main stream product PERC of the photovoltaic cell is more than 23%, the yield is more than 95%, certain proportion of scratches and other defects exist in defective products, and the yield and the efficiency are influenced.
The PECVD silicon nitride film plating of the photovoltaic cell process can reduce the reflection of light and simultaneously has the performances of oxidation resistance, insulation and the like. In addition, the PECVD film is rich in hydrogen, and can play a role in passivating and inhibiting impurities and defects of the silicon substrate.
The front and back surfaces of a PECVD coating film in a photovoltaic cell process are often different film layers, and different functions are achieved. For example, the alumina film layer can absorb high-density negative charges and has a field passivation effect; silicon oxynitride can adjust the refractive index and the like. The conventional PECVD only can plate one film layer at a time, and the plating of various films by a battery process usually needs to be performed by rewinding, so that the probability of scratching of the silicon wafer is greatly increased, and the production capacity is wasted due to the increase of the carrying time.
Disclosure of Invention
According to the technical problem, a tubular PECVD graphite boat structure capable of being plated with multiple films is provided. The invention mainly utilizes the gap between two adjacent boat sheets to form an independent coating channel, thereby realizing the formation of a plurality of independent coating channels.
The technical means adopted by the invention are as follows:
a tubular PECVD graphite boat structure capable of being plated with multiple films comprises a plurality of boat sheets which are sequentially stacked, wherein the stacking direction of the boat sheets is along the thickness direction of the boat sheets;
the boat piece is provided with a plurality of hollowed-out areas along the length direction, the hollowed-out areas are used for mounting silicon chips, and at least one hook point for clamping the silicon chips is arranged around the hollowed-out areas; after the silicon chip is installed in the hollow area, an independent and closed film coating channel is formed between two adjacent boat pieces, the extending direction of the film coating channel is parallel to the length direction of the boat pieces, and two ends of each boat piece in the length direction are respectively provided with an air inlet hole and an air outlet hole which are communicated with the film coating channel;
and coating gas or inert gas is introduced into the coating channel.
The electrodes are arranged at one end of the boat piece in the length direction, and the electrodes of two adjacent boat pieces are respectively positioned at two ends of the boat piece.
The two sides of the boat piece in the length direction are provided with a clapboard at the gap between two adjacent boat pieces, the clapboard is connected with the two boat pieces through a clapboard installing groove processed at the gap between the two boat pieces and seals the gap; and a plurality of boat sheet ceramic insulating blocks are arranged between two adjacent partition plates. And the partition board is provided with a mounting hole matched with the ceramic insulating block.
The boat sheet comprises two length vertical plates, two width vertical plates and a plurality of middle flat plates, wherein the height of each length vertical plate is the thickness of the boat sheet, the length of each length vertical plate is the length of the boat sheet, and the length of each width vertical plate is the width of the boat sheet;
the two length vertical plates and the two width vertical plates are enclosed to form a rectangle, two ends of the middle flat plate are respectively fixedly connected with the two length vertical plates, a hollow area is formed by a gap between two adjacent middle flat plates and a gap between the middle flat plate and the width vertical plate, and the air inlet and the air outlet are respectively arranged on the two width vertical plates.
The hollow area is used for installing one silicon wafer or installing two silicon wafers arranged back to back.
The same coating gas is introduced into the plurality of coating channels, or different coating gases are introduced into the plurality of coating channels, or one part of the coating channels is introduced with the same coating gas, and the other part of the coating channels is introduced with different coating gases, or one part of the coating channels is introduced with the same coating gas, and the other part of the coating channels is introduced with inert protective gas, or one part of the coating channels is introduced with the same coating gas, and one part of the coating channels is introduced with different coating gases, while the other part is introduced with inert protective gas.
The fretwork region can adopt the soft sealing washer of high temperature resistant more than 500 ℃ to contact with the silicon chip, colludes the point and distributes in the different position in fretwork region, guarantees that the silicon chip does not drop and the airtight degree of single channel.
Compared with the prior art, the invention has the following advantages:
1. the front and back surface films of the existing photovoltaic cells are different, and the PECVD film plating process can plate the back surface first and then plate the front surface, or vice versa. The silicon nitride film on the front surface and the back surface of a common battery production factory uses 2 production devices or 2 sets of processes of one device, and after plating, plating on one surface and then plating on the other surface needs to be reversed. The invention can completely solve the secondary problem, a silicon wafer is placed in the hollow-out area of the single-layer boat sheet and positioned in two independent gas channels, and the silicon wafer can be placed in the two independent gas channels by using a single device, so that the time for rewinding is saved, the scratch in the rewinding process is reduced, and the yield is improved. Meanwhile, the film coating process is prevented from being exposed in the air, and the pollution is reduced.
2. The invention can improve the quality of the battery passive film and is beneficial to improving the efficiency.
Based on the reason, the invention can be widely popularized in the fields of photovoltaic cell coating and the like.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a structural schematic diagram of a tubular PECVD graphite boat capable of being plated with multiple films according to an embodiment of the present invention.
FIG. 2 is a side view of a multi-film-coated tubular PECVD graphite boat in accordance with one embodiment of the present invention.
FIG. 3 is a schematic diagram of two boat sheets according to an embodiment of the present invention.
FIG. 4 is a diagram illustrating the arrangement of channels for plating aluminum oxide on the back surface of the PERC battery in accordance with the present invention.
FIG. 5 is a diagram illustrating the layout of channels plated with silicon nitride on the backside of a PERC cell in accordance with one embodiment of the present invention.
FIG. 6 is a diagram illustrating the layout of channels coated with SiON on the front side of a PERC cell in accordance with one embodiment of the present invention.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. Any specific values in all examples shown and discussed herein are to be construed as exemplary only and not as limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
In the description of the present invention, it is to be understood that the orientation or positional relationship indicated by the directional terms such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal" and "top, bottom", etc., are generally based on the orientation or positional relationship shown in the drawings, and are used for convenience of description and simplicity of description only, and in the absence of any contrary indication, these directional terms are not intended to indicate and imply that the device or element so referred to must have a particular orientation or be constructed and operated in a particular orientation, and therefore should not be considered as limiting the scope of the present invention: the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.
Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
It should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and the terms have no special meanings unless otherwise stated, and therefore, the scope of the present invention should not be construed as being limited.
As shown in fig. 1 to 6, a multi-film-platable tubular PECVD graphite boat structure comprises a plurality of boat sheets 1 stacked in sequence, wherein the stacking direction of the boat sheets 1 is along the thickness direction of the boat sheets 1;
the boat piece 1 is provided with a plurality of hollow areas 2 along the length direction, the hollow areas 2 are used for mounting silicon chips, and at least one hook point for clamping the silicon chips is arranged around each hollow area 2; after the silicon wafer is installed in the hollow area 2, an independent and closed film coating channel is formed between two adjacent boat sheets 1, the extending direction of the film coating channel is parallel to the length direction of the boat sheets 1, and two ends of the boat sheets 1 in the length direction are respectively provided with an air inlet hole 3 and an air outlet hole 4 which are communicated with the film coating channel;
and coating gas or inert gas is introduced into the coating channel.
The electrodes 7 are arranged at one end of the boat sheet 1 in the length direction, and the electrodes 7 of two adjacent boat sheets 1 are respectively positioned at two ends of the boat sheet.
Two sides of the boat pieces 1 in the length direction are provided with a partition plate 5 at a gap between two adjacent boat pieces 1, and the partition plate 5 is connected with the two boat pieces 1 through a partition plate mounting groove processed at the gap between the two boat pieces 1 and seals the gap; a plurality of boat sheet ceramic insulating blocks 6 are arranged between two adjacent partition plates 5. And the partition plate is provided with a mounting hole matched with the ceramic insulating block 6.
The boat sheet 1 comprises two length vertical plates 11, two width vertical plates 12 and a plurality of middle flat plates 13, wherein the height of each length vertical plate 11 is the thickness of the boat sheet 1, the length of each length vertical plate 11 is the length of the boat sheet 1, and the length of each width vertical plate 12 is the width of the boat sheet 1;
the two length vertical plates 11 and the two width vertical plates 12 form a rectangle, two ends of the middle flat plate 13 are respectively fixedly connected with the two length vertical plates 11, a hollow area 2 is formed by a gap between two adjacent middle flat plates 14 and a gap between the middle flat plate 13 and the width vertical plates 12, and the air inlet 3 and the air outlet 4 are respectively arranged on the two width vertical plates 12.
The hollow area 2 is used for mounting one silicon wafer or two silicon wafers arranged back to back.
The same coating gas is introduced into the plurality of coating channels, or different coating gases are introduced into the plurality of coating channels, or one part of the coating channels is introduced with the same coating gas, and the other part of the coating channels is introduced with different coating gases, or one part of the coating channels is introduced with the same coating gas, and the other part of the coating channels is introduced with inert protective gas, or one part of the coating channels is introduced with the same coating gas, and one part of the coating channels is introduced with different coating gases, while the other part is introduced with inert protective gas.
The process for manufacturing the PERC battery comprises the following steps: texturing → front diffusion → front SE → back etching → back coating of aluminum oxide → back coating of silicon nitride → front coating of silicon nitride → back laser grooving → front and back screen printing. Taking the coating of the PERC cell as an example:
back side aluminum oxide coating: the gas in the coating channel is set as shown in fig. 4, and the temperature, time, gas flow, channel pressure, power and duty ratio of each temperature zone are set. Back channel access of silicon wafer to TMA and O3Introducing N into the positive side channel of the silicon wafer2After ventilation and electrification, the process is carried out, and after film coating is finished, N is used2And purging coating channels on the front side and the back side of the silicon wafer.
Coating the back surface with silicon nitride: the gas in the coating channel is set as shown in fig. 5, and the temperature, time, gas flow, channel pressure, power and duty ratio of each temperature zone are set. SiH is introduced into a back side channel of the silicon chip4And NH3Introducing N into the positive side channel of the silicon wafer2After ventilation and electrification, the process is carried out, and after film coating is finished, N is used2And purging coating channels on the front side and the back side of the silicon wafer.
Coating the front surface of silicon nitride: the gas in the coating channel is set as shown in fig. 6, and the temperature, time, gas flow, channel pressure, power and duty ratio of each temperature zone are set. SiH is introduced into a channel at the front side of the silicon wafer4、NH3And N2O, introducing N into a back side channel of the silicon wafer2After ventilation and electrification, the process is carried out, and after film coating is finished, N is used2And purging coating channels on the front side and the back side of the silicon wafer.
Compared with the film coating performance and the productivity of the conventional graphite boat, the method provided by the invention has the advantages that the film coating performance and the productivity are compared. The operations are carried out by the same person in sequence, and the process is similar. The P-type high-resistance sheet with the resistivity of 80 omega cm has the thickness of 180 mu m and the thickness of 8nm of aluminum oxide film, and the saturated dark current density J0 is tested by a Suns-Voc test after sintering. And continuously plating the silicon nitride on the front surface and the back surface by using the same furnace platform, and introducing gases with different proportions to the front surface and the back surface to finish the film plating of the silicon nitride on the front surface and the back surface. The comparative results are shown in the following table:
finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (7)
1. A tubular PECVD graphite boat structure capable of being plated with multiple films is characterized by comprising a plurality of boat sheets which are sequentially stacked, wherein the stacking direction of the boat sheets is along the thickness direction of the boat sheets;
the boat piece is provided with a plurality of hollowed-out areas along the length direction, the hollowed-out areas are used for mounting silicon chips, and at least one hook point for clamping the silicon chips is arranged around the hollowed-out areas; after the silicon chip is installed in the hollow area, an independent and closed film coating channel is formed between two adjacent boat pieces, the extending direction of the film coating channel is parallel to the length direction of the boat pieces, and two ends of each boat piece in the length direction are respectively provided with an air inlet hole and an air outlet hole which are communicated with the film coating channel;
and coating gas or inert gas is introduced into the coating channel.
2. The multi-film-coatable tubular PECVD graphite boat structure of claim 1, wherein said boat is provided with electrodes at one end of the boat in the length direction, and the electrodes of two adjacent boat are respectively located at two ends of the boat.
3. The multi-film-platable tubular PECVD graphite boat structure as claimed in claim 1, wherein two sides of the boat sheet in the length direction are provided with a partition board adjacent to the gap between the two boat sheets, the partition board is connected with the two boat sheets through a partition board mounting groove processed at the gap between the two boat sheets and seals the gap; and a plurality of boat sheet ceramic insulating blocks are arranged between two adjacent partition plates.
4. The multi-film-coatable tubular PECVD graphite boat structure of claim 1 wherein said spacer has mounting holes matching said ceramic insulator blocks.
5. The multi-film-coatable tubular PECVD graphite boat structure of claim 1 wherein said boat comprises two length risers, two width risers, and a plurality of intermediate plates,
the two length vertical plates and the two width vertical plates are enclosed to form a rectangle, two ends of the middle flat plate are respectively fixedly connected with the two length vertical plates, a hollow area is formed by a gap between two adjacent middle flat plates and a gap between the middle flat plate and the width vertical plate, and the air inlet and the air outlet are respectively arranged on the two width vertical plates.
6. The multi-film-coatable tubular PECVD graphite boat structure of claim 1 wherein the hollowed-out area is used to mount one of the silicon wafers or two silicon wafers arranged back-to-back.
7. The tubular PECVD graphite boat structure of claim 1 wherein the same coating gas is introduced into a plurality of coating channels, or different coating gases are introduced into a plurality of coating channels, or one part of the coating channels is introduced with the same coating gas and the other part of the coating channels is introduced with different coating gases, or one part of the coating channels is introduced with the same coating gas and the other part of the coating channels is introduced with inert shielding gas, or one part of the coating channels is introduced with different coating gases and the other part of the coating channels is introduced with inert shielding gas, or one part of the coating channels is introduced with the same coating gas, one part of the coating channels is introduced with different coating gases and the other part of the coating channels is introduced with inert shielding gas.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110801121.6A CN113430503A (en) | 2021-07-15 | 2021-07-15 | Tubular PECVD graphite boat structure capable of plating multiple films |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110801121.6A CN113430503A (en) | 2021-07-15 | 2021-07-15 | Tubular PECVD graphite boat structure capable of plating multiple films |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201896192U (en) * | 2010-11-18 | 2011-07-13 | 浙江贝盛光伏股份有限公司 | Bidirectional graphite boat |
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