CN206902232U - Tubular PECVD device - Google Patents
Tubular PECVD device Download PDFInfo
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- CN206902232U CN206902232U CN201720555046.9U CN201720555046U CN206902232U CN 206902232 U CN206902232 U CN 206902232U CN 201720555046 U CN201720555046 U CN 201720555046U CN 206902232 U CN206902232 U CN 206902232U
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- stuck point
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- pecvd device
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a kind of Tubular PECVD device, including wafer loading area, body of heater, special gas storage tank, vacuum system, control system and graphite boat, wherein, the graphite boat is used to load and unload silicon chip, and the graphite boat includes stuck point, and the stuck point includes stuck point axle, stuck point cap and stuck point base, the stuck point axle is arranged on stuck point base, the stuck point cap and stuck point axis connection, form stuck point groove, the depth of stuck point groove is 0.5 1mm between the stuck point axle and stuck point cap, stuck point base.Simple in construction using the utility model, obtained battery outward appearance yield and EL yields are high, solve the problems, such as to scratch and/or around plating.
Description
Technical field
It the utility model is related to area of solar cell, more particularly to a kind of Tubular PECVD device.
Background technology
Crystal silicon solar batteries are a kind of effectively absorption solar radiant energies, and electricity is converted optical energy into using photovoltaic effect
Can device, when solar irradiation is in semiconductor P-N junction, form new hole-electron pair, it is empty in the presence of P-N junction electric field
Cave flows to P areas by N areas, and electronics flows to N areas by P areas, and electric current is just formed after connecting circuit.
Conventional crystalline silicon solar cell substantially only with front passivating technique, is sunk in front side of silicon wafer with PECVD mode
One layer of silicon nitride of product, recombination rate of few son on preceding surface is reduced, can significantly lift the open-circuit voltage of crystal silicon battery and short
Road electric current, so as to lift the photoelectric transformation efficiency of crystal silicon solar battery.
With the requirement more and more higher of the photoelectric transformation efficiency to crystal silicon battery, people, which begin one's study, carries on the back passivating solar battery
Technology.The way of main flow is that back side coating film, board-like PECVD are made up of different chambers using board-like PECVD at present, each
Chamber plates a tunic, once equipment is fixed, the number of plies of composite membrane has just been fixed, thus the shortcomings that board-like PECVD be can not spirit
The combination of regulation composite membrane living, it is impossible to the preferably passivation effect of optimization back side film, so as to limit the photoelectric transformation efficiency of battery.
Meanwhile board-like PECVD uses indirect plasma method, the passivation effect of film layer is not ideal.Board-like PECVD also has
The shortcomings that uptime is low, and maintenance time is long, influence production capacity and yield.
The utility model deposits composite membrane using tubular type PECVD technique in silicon chip back side, makes the efficient sun of two-sided PERC
Can battery.Because tubular type PECVD technique is using direct plasma method, again can with the combination of flexible modulation composite membrane and into
Divide, the good passivation effect of film layer, the photoelectric transformation efficiency of PERC solar cells can be substantially improved.Tubular type PECVD technique it is excellent
The flexibility of elegant inactivating performance and technique with the thickness of relative reduction alundum (Al2O3) film layer, can reduce TMA consumption, together
When, tubular type PERC technologies easily safeguard that uptime is high.In summary many factors, compared with board-like PECVD technique, tubular type
PECVD technique, which makes efficient PERC batteries, significant integrated cost advantage.
Nevertheless, tubular type PECVD technique is due to existing around plating and scratch this pair problems to condition each other, outward appearance yield
With EL yields always than relatively low, the scale of mass production of the technology is influenceed.
Tubular type PECVD filming equipments are by the way that silicon chip inserted into graphite boat, then graphite boat feeding quartz ampoule are done into plated film and sunk
Product.Silicon chip is fixed on graphite boat wall by graphite boat by 3 stuck points, and the one side of silicon chip contacts with graphite boat wall, in silicon chip
The upper depositional coating of one side in addition.In order to ensure the uniformity of plated film, silicon chip will be adjacent to graphite boat wall, therefore, the width of stuck point groove
Smaller, about 0.25mm is set.Tubular type PECVD plated films have two shortcomings：1, during inserted sheet, silicon chip can be sent out with graphite boat wall
Raw friction, silicon chip is caused to produce scuffing by the one side of graphite boat wall.2, in deposition process, due to silicon chip and graphite boat wall it
Between gap inevitably be present, the gap especially at stuck point is larger, and process gas can be diffused into the another side of silicon chip, another
Simultaneously form the deposition of film, i.e., it is more serious around plating at plating, stuck point.
The front plated film of conventional solar cell is made of tubular type PECVD, scratches and resultant battery will not be produced not around plating
Good influence, reason are：1, silicon chip back side does not have PN junction and plated film, and cut does not interfere with the electrical property and EL yields of battery.2,
The back side of conventional batteries does not have plated film, relatively thin around the film layer for being plated to dorsal edge, it appears that unobvious, does not influence outward appearance yield.
But the back side film of PERC batteries is made of tubular type PECVD, scratch and have a strong impact on the qualified of resultant battery around plating
Rate, problem are：1, back side film, can be around positive edge be plated to, because PERC batteries are double-sided coatings, just in deposition process
The coating film thickness at face edge is thicker to cause battery front side edge boat tooth print and aberration occur, influences outward appearance yield.2, inserted sheet to stone
During Mo Zhou, the front of silicon chip can contact graphite boat wall, and front PN junction is scratched, and cause EL tests cut occur, influence
The electrical property of battery.
Utility model content
Technical problem to be solved in the utility model also resides in, there is provided a kind of Tubular PECVD device, simple in construction, system
The battery outward appearance yield and EL yields obtained is high, solves the problems, such as to scratch and/or around plating.
In order to solve the above-mentioned technical problem, the utility model provides a kind of Tubular PECVD device, including wafer-load
Area, body of heater, special gas storage tank, vacuum system, control system and graphite boat, the graphite boat are used to load and unload silicon chip, the graphite boat
Including stuck point, the stuck point includes stuck point axle, stuck point cap and stuck point base, and the stuck point axle is arranged on stuck point base, described
Stuck point cap and stuck point axis connection, form stuck point groove between the stuck point axle and stuck point cap, stuck point base, the depth of stuck point groove is
0.5-1mm。
As the improvement of above-mentioned technical proposal, the depth of the stuck point groove is 0.6-0.8mm.
As the improvement of above-mentioned technical proposal, the depth of the stuck point groove is 0.7mm.
As the improvement of above-mentioned technical proposal, a diameter of 6-15mm of the stuck point base.
As the improvement of above-mentioned technical proposal, a diameter of 9-12mm of the stuck point base.
As the improvement of above-mentioned technical proposal, the bevel angle of the stuck point cap is 35-45 degree.
As the improvement of above-mentioned technical proposal, the bevel angle of the stuck point cap is 40-45 degree.
As the improvement of above-mentioned technical proposal, the thickness of the stuck point cap is 1-1.3mm.
As the improvement of above-mentioned technical proposal, the thickness of the stuck point cap is 1.2-1.3mm.
As the improvement of above-mentioned technical proposal, the special gas storage tank is provided with the first gas pipeline for being used to be passed through silane, is used for
It is passed through the second gas pipeline of ammonia, the third gas pipeline for being passed through trimethyl aluminium and the 4th gas for being passed through laughing gas
Body pipeline.
Implement the utility model, have the advantages that：
The utility model Tubular PECVD device include wafer loading area, body of heater, special gas storage tank, vacuum system, control system with
And graphite boat, the graphite boat include stuck point, the stuck point includes stuck point axle, stuck point cap and stuck point base, stuck point axle and stuck point
Stuck point groove is formed between cap, stuck point base, the depth of stuck point groove is 0.5-1mm.The utility model is by reducing on the inside of stuck point groove
Depth, so as to reduce the gap size at stuck point between silicon chip and stuck point base, and then reduce air-flow around being plated to silicon chip back side,
The ratio of battery front side edge boat tooth print is greatly reduced.Moreover, angle and stuck point cap by suitably increasing stuck point cap inclined-plane
Thickness, by adjusting automatic slice inserting machine, when being slightly increased inserted sheet silicon chip from graphite boat wall with a distance from, reduce the ratio of scuffing, together
When reduce silicon chip slide when with graphite boat wall impact, reduce fragment rate.
The special gas storage tank be provided be used to being passed through the first gas pipeline of silane, the second gas pipeline for being passed through ammonia,
For being passed through the third gas pipeline of trimethyl aluminium and the 4th gas piping for being passed through laughing gas.Four gas pipings
Act on alone or in combination, for forming di-aluminium trioxide film, silicon dioxide film, silicon oxynitride film, silicon nitride film.Silane, ammonia,
Four trimethyl aluminium, laughing gas gas pipings can be by using different combination of gases, different gas flow ratios, and difference
Sedimentation time form different film layers, for silicon nitride film or silicon oxynitride film, by adjusting gas flow ratio, can obtain
The silicon nitride film or silicon oxynitride film of heterogeneity ratio and refractive index.The composition of the built-up sequence of composite membrane, thickness and film can
With flexible modulation, therefore, the utility model production process is flexibly controllable, reduces cost, and yield is big.
To sum up, the utility model is simple in construction, and cost is low, and yield is big, high yield rate, obtained battery outward appearance yield and EL
Yield is high, solves the problems, such as to scratch and/or around plating.
Brief description of the drawings
Fig. 1 is the schematic diagram of the utility model Tubular PECVD device.
Fig. 2 is the schematic diagram of graphite boat shown in Fig. 1；
Fig. 3 is the schematic diagram of the stuck point of graphite boat shown in Fig. 2.
Embodiment
It is new to this practicality below in conjunction with accompanying drawing to make the purpose of this utility model, technical scheme and advantage clearer
Type is described in further detail.
As shown in figure 1, a kind of Tubular PECVD device, including wafer loading area 1, body of heater 2, spy is also disclosed in the utility model
Gas holder 3, vacuum system 4, control system 5 and graphite boat 6.The wafer loading area 1 is used to load and unload silicon chip, and it connects with body of heater 2
Connect.The special gas storage tank 3 is used to be passed through gas, and it is connected with body of heater 2.The vacuum system 4 is connected with body of heater 2, for stove
Body realizes vacuumize process.The control system 5 is connected with body of heater 2, special gas storage tank 3, vacuum system 4, is automated for realizing
Control.The function of the control system 5 includes but is not limited to：Control the temperature of body of heater, the gas flow that control special gas storage tank is passed through
And the time, control vacuum and the pumpdown time of vacuum system.
As shown in Figures 2 and 3, the graphite boat 6 is used to load and unload silicon chip, is placed in body of heater 2.The graphite boat 6 includes stuck point
60, the stuck point 60 includes stuck point axle 61, stuck point cap 62 and stuck point base 63, and the stuck point axle 61 is arranged on stuck point base 63
On, the stuck point cap 62 is connected with stuck point axle 61, and stuck point groove is formed between the stuck point axle 61 and stuck point cap 62, stuck point base 63
64, as shown in figure 3, the depth of the stuck point groove 64 is h, h 0.5-1mm, a diameter of D of stuck point base 63, D 6-15mm,
The bevel angle of stuck point cap 62 is α, and α is 35-45 degree, and the thickness of stuck point cap 62 is a, a 1-1.3mm.
Preferably, the depth h of the stuck point groove 64 is 0.6-0.8mm, and the diameter D of stuck point base 63 is 9-12mm, stuck point
The bevel angle α of cap 62 is 40-45 degree, and the thickness a of stuck point cap 62 is 1.2-1.3mm.
More preferably, the depth h of the stuck point groove 64 is 0.7mm, and the diameter D of stuck point base 63 is 9mm, stuck point cap 62 it is oblique
Face angle [alpha] is 40 degree, and the thickness a of stuck point cap 62 is 1.2mm.
It should be noted that the depth h of the stuck point groove refers to the depth on the inside of stuck point groove, be primarily referred to as stuck point axle 61 with
The depth of the side of the angle of stuck point base 63.The depth h of stuck point groove=（Stuck point base diameter-stuck point shaft diameter）/2.Stuck point
The bevel angle of cap is α, refers to the inclined-plane of stuck point cap and the angle of vertical direction.
The depth h of existing stuck point groove is 1.75mm, and the diameter D of stuck point base is 9mm, and the bevel angle α of stuck point cap is
30 degree, the thickness a of stuck point cap is 1mm.The depth of existing stuck point groove is big, causes the gap mistake of silicon chip and stuck point base at stuck point
Greatly, it is so that more around the gas for being plated to silicon chip back side, cause the boat tooth print ratio at battery front side edge very high.The angle of stuck point cap
It is small, thickness is small, causes the adjustment space of automatic slice inserting machine small, the ratio of scuffing can not be reduced effectively.
Notacoria deposition is done for tubular type PECVD, is scratched and is conflict around plating.By adjusting automatic slice inserting machine, silicon is allowed
Piece inserts stuck point groove in the state of not contacting graphite boat wall, silicon chip and graphite boat and maintaining a certain distance, and avoids silicon chip and stone
Mo Zhoubi rubs.If the distance of silicon chip and graphite boat piece is excessive, scuffing ratio is few, but silicon chip is just not easy to be adjacent to boat
Wall, it will increase around plating ratio.If distance is too big, silicon chip is possible to that stuck point groove can not be inserted, and produces the possibility of piece；If
The distance of silicon chip and graphite boat piece is too small, and silicon chip is more adjacent to graphite boat piece, and the ratio around plating is small, and the ratio of scuffing will increase.
Battery front side edge boat tooth print it is corresponding with the stuck point of PECVD back side coating films, be due to air-flow at stuck point around
It is plated to battery front side and is formed.Because the thickness of stuck point base is slightly less than the thickness of graphite boat piece, cause silicon chip at stuck point with
Gap be present between stuck point base, when plating notacoria, air-flow enters gap from the lower section both sides of stuck point axle, makes the positive side of silicon chip
Edge forms the deposition of film layer, that is, produces semicircular boat tooth print.
The utility model reduces the depth on the inside of stuck point groove by adjusting stuck point base diameter D and stuck point shaft diameter size
H is spent, so as to reduce the gap size at stuck point between silicon chip and stuck point base, and then reduces air-flow around silicon chip back side is plated to, greatly
Width reduces the ratio of front edge boat tooth print.
By adjusting automatic slice inserting machine, when silicon chip inserts position certain in graphite boat, sucker release vacuum, silicon chip is fallen into
On the inclined-plane α of stuck point cap, by gravity, silicon chip is slid to being adjacent to graphite boat wall from inclined-plane.This contactless inserted sheet mode, use
To reduce the scuffing ratio of silicon chip.
The utility model is by suitably increasing the angle [alpha] on stuck point cap inclined-plane and the thickness a of stuck point cap, by adjusting automatic insert
Piece machine, when being slightly increased inserted sheet silicon chip from graphite boat wall with a distance from, reduce the ratio of scuffing, the bevel angle of increase stuck point cap subtracts
With the impact of graphite boat wall when few silicon chip slides, fragment rate is reduced.
It should be noted that in the prior art, opposing connection plating is typically all by remedying to complete afterwards, such as is applied
Number：Alkali polishing method in PERC crystal silicon solar energy batteries production disclosed in 201510945459.3, nitrogen is plated in positive PECVD
After SiClx membrane process, etched using belt drive mode and remove back surface and edge around plating silicon nitride, solve current front side films
Layer around plating cause back surface passivation ineffective the problems such as.However, the utility model tubular type PERC batteries are back side coating films around plating
To front, there is PN junction in front, if polishing mode using the alkali of above patent, can destroy positive PN junction.The utility model leads to
Cross adjustment coating process and coating structure so that avoid the generation around plating in production process can, inherently solve around
The problem of plating.Without increasing by a procedure in addition, simplify process, save cost., the utility model is extremely quick for cost
The photovoltaic solar industry of sense, has great importance.Moreover, the utility model also solves the problem of scuffing.
Further, the special gas storage tank 3, which is provided with, is used to be passed through the first gas pipeline of silane, the second gas for being passed through ammonia
Body pipeline, the third gas pipeline for being passed through trimethyl aluminium and the 4th gas piping for being passed through laughing gas, first gas
Pipeline, second gas pipeline, third gas pipeline, the 4th gas piping are located at the inside of special gas storage tank 3, not shown in figure.Institute
State four gas pipings to act on alone or in combination, for forming di-aluminium trioxide film, silicon dioxide film, silicon oxynitride film, nitridation
Silicon fiml.Four silane, ammonia, trimethyl aluminium, laughing gas gas pipings can be by using different combination of gases, different gases
Flow-rate ratio, and different sedimentation times form different film layers, for silicon nitride film or silicon oxynitride film, by adjusting gas
Flow-rate ratio, the silicon nitride film or silicon oxynitride film of heterogeneity ratio and refractive index can be obtained.Built-up sequence, the thickness of composite membrane
The composition of degree and film can be with flexible modulation, and therefore, the utility model production process is flexibly controllable, reduces cost, and yield is big.This reality
Back side composite membrane is deposited in silicon chip back side using Tubular PECVD device with new, tubular type PERC equipment uses direct plasma method,
Plasma is directly bombarded silicon chip surface, and the passivation effect of film layer is notable, to improve the opto-electronic conversion of solar cell effect
Rate lays the foundation.
To sum up, the utility model is simple in construction, and cost is low, and yield is big, high yield rate, obtained battery outward appearance yield and EL
Yield is high, solves the problems, such as to scratch and/or around plating.
Finally, it should be noted that above example is only illustrating the technical solution of the utility model rather than to this reality
With the limitation of novel protected scope, although being explained in detail with reference to preferred embodiment to the utility model, this area it is common
It will be appreciated by the skilled person that the technical solution of the utility model can be modified or equivalent substitution, without departing from this reality
With the spirit and scope of new technique scheme.
Claims (10)
1. a kind of Tubular PECVD device, it is characterised in that including wafer loading area, body of heater, special gas storage tank, vacuum system, control system
System and graphite boat, wherein, the graphite boat is used to load and unload silicon chip, and the graphite boat includes stuck point, and the stuck point includes stuck point
Axle, stuck point cap and stuck point base, the stuck point axle are arranged on stuck point base, the stuck point cap and stuck point axis connection, the card
Stuck point groove is formed between point axle and stuck point cap, stuck point base, the depth of stuck point groove is 0.5-1mm.
2. Tubular PECVD device as claimed in claim 1, it is characterised in that the depth of the stuck point groove is 0.6-0.8mm.
3. Tubular PECVD device as claimed in claim 2, it is characterised in that the depth of the stuck point groove is 0.7mm.
4. Tubular PECVD device as claimed in claim 1, it is characterised in that a diameter of 6-15mm of the stuck point base.
5. Tubular PECVD device as claimed in claim 4, it is characterised in that a diameter of 9-12mm of the stuck point base.
6. Tubular PECVD device as claimed in claim 1, it is characterised in that the bevel angle of the stuck point cap is 35-45
Degree.
7. Tubular PECVD device as claimed in claim 6, it is characterised in that the bevel angle of the stuck point cap is 40-45
Degree.
8. Tubular PECVD device as claimed in claim 1, it is characterised in that the thickness of the stuck point cap is 1-1.3mm.
9. Tubular PECVD device as claimed in claim 8, it is characterised in that the thickness of the stuck point cap is 1.2-1.3mm.
10. Tubular PECVD device as claimed in claim 1, it is characterised in that the special gas storage tank, which is provided with, to be used to be passed through silane
First gas pipeline, the second gas pipeline for being passed through ammonia, the third gas pipeline for being passed through trimethyl aluminium and use
In the 4th gas piping for being passed through laughing gas.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720555046.9U CN206902232U (en) | 2017-05-18 | 2017-05-18 | Tubular PECVD device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720555046.9U CN206902232U (en) | 2017-05-18 | 2017-05-18 | Tubular PECVD device |
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| CN206902232U true CN206902232U (en) | 2018-01-19 |
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ID=61287992
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244020A (en) * | 2018-11-06 | 2019-01-18 | 通威太阳能（安徽）有限公司 | A kind of novel pipe PECD graphite boat stuck point |
-
2017
- 2017-05-18 CN CN201720555046.9U patent/CN206902232U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244020A (en) * | 2018-11-06 | 2019-01-18 | 通威太阳能（安徽）有限公司 | A kind of novel pipe PECD graphite boat stuck point |
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