CN215148068U - Chemical mechanical polishing system - Google Patents
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- CN215148068U CN215148068U CN202121628617.XU CN202121628617U CN215148068U CN 215148068 U CN215148068 U CN 215148068U CN 202121628617 U CN202121628617 U CN 202121628617U CN 215148068 U CN215148068 U CN 215148068U
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- 238000005498 polishing Methods 0.000 title claims abstract description 214
- 239000000126 substance Substances 0.000 title claims abstract description 36
- 239000002002 slurry Substances 0.000 claims abstract description 134
- 239000007788 liquid Substances 0.000 claims abstract description 61
- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 238000000227 grinding Methods 0.000 claims abstract description 48
- 238000004364 calculation method Methods 0.000 claims description 11
- 229910003460 diamond Inorganic materials 0.000 claims description 9
- 239000010432 diamond Substances 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 5
- 238000011084 recovery Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 51
- 238000007517 polishing process Methods 0.000 description 21
- 230000001276 controlling effect Effects 0.000 description 17
- 230000000694 effects Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A chemical mechanical polishing system for introducing a polishing slurry to planarize semiconductor devices includes a rotatable polishing pad, a holding device for holding a semiconductor device, and a slurry supply device. The slurry supply device is provided with a storage tank unit for storing the grinding slurry, a liquid supply pipeline unit which is communicated with the storage tank unit and can lead the grinding slurry out to the grinding pad, and a temperature control unit which is used for controlling the temperature of the grinding slurry. The utility model discloses utilize this temperature control unit control to derive the temperature to the grinding thick liquids on this grinding pad, and make the ambient temperature in the grinding processing procedure maintain stably, and then accurately control this semiconductor element's planarization degree.
Description
Technical Field
The present invention relates to a semiconductor device planarization apparatus, and more particularly to a chemical mechanical polishing system.
Background
Chemical Mechanical Planarization (CMP) is a method in which a semiconductor device is mounted on a rotatable polishing pad in a face-down manner, a polishing slurry comprising a plurality of polishing particles and a polishing solution is introduced onto the polishing pad, and then the polishing pad is rotated to make the polishing pad cooperate with the polishing slurry to planarize the semiconductor device by mechanical polishing and chemical etching.
The CMP process generally controls the planarization endpoint of the semiconductor device by adjusting the process time or detecting the thickness, however, the temperature between the semiconductor device and the polishing slurry and the polishing pad is increased due to heat generated by friction between the semiconductor device and the polishing slurry during the process, so that the polishing rate is changed, and the planarization degree of the semiconductor device deviates from the expected degree at a predetermined process time, and the expected surface property cannot be precisely achieved.
Disclosure of Invention
An object of the utility model is to provide a chemical mechanical polishing system can accurately control the effect of grinding semiconductor element.
The utility model discloses chemical mechanical polishing system supplies to be used for leading-in grinding thick liquids to carry out the planarization to at least a semiconductor component, contain base, fixing device, and thick liquids feeding mechanism.
The base is provided with a grinding pad which is positioned on the top surface and can rotate.
The fixing device is arranged above the grinding pad and used for fixing the at least one semiconductor element and driving the at least one semiconductor element to rotate relative to the grinding pad.
The slurry supply device is used for supplying the grinding slurry to the grinding pad so as to grind the at least one semiconductor element, and is provided with a storage tank unit for storing the grinding slurry, a liquid supply pipeline unit which is communicated with the storage tank unit and can lead the grinding slurry out to the grinding pad, and a temperature control unit which is used for controlling the temperature of the grinding slurry led out from the storage tank unit.
Preferably, the chemical mechanical polishing system of the present invention, wherein the temperature control unit has at least one temperature regulator for controlling the temperature of the polishing slurry.
Preferably, the chemical mechanical polishing system of the present invention, wherein the storage tank unit has at least one storage tank for storing the polishing slurry and communicating with the liquid supply pipeline unit, and the at least one temperature adjuster is disposed in the liquid supply pipeline unit for controlling the temperature of the polishing slurry flowing through the liquid supply pipeline unit.
Preferably, the chemical mechanical polishing system, wherein the liquid supply line unit has a plurality of liquid supply lines, the storage tank unit has a plurality of storage tanks for storing the polishing slurry, one end of each liquid supply line communicates with one of the corresponding storage tanks and can supply the polishing slurry to the polishing pad, the temperature control unit has a plurality of temperature regulators and a plurality of flow controllers, the temperature regulators are respectively and correspondingly disposed on the storage tanks or the liquid supply lines, so that the polishing slurry derived from the storage tanks has at least two temperatures, and the flow controllers are respectively and correspondingly disposed on the storage tanks or the liquid supply lines for respectively controlling the flow rates of the polishing slurry from different storage tanks, so that the mixed polishing slurry has a predetermined temperature.
Preferably, the chemical mechanical polishing system of the present invention, wherein the liquid supply pipeline unit further has a main liquid supply pipeline, one end of the main liquid supply pipeline is connected to the liquid supply pipeline, and the polishing slurry mixed by the main liquid supply pipeline flowing into the liquid supply pipeline can be supplied to the polishing pad.
Preferably, the chemical mechanical polishing system of the present invention further comprises a measuring and calculating device for measuring at least one of the temperature of the polishing pad, the temperature of the semiconductor device, the interface temperature of the semiconductor device and the polishing pad, the temperature of the polishing slurry discharged from the polishing pad, and the temperature of the polishing slurry recycling liquid after polishing.
Preferably, the chemical mechanical polishing system of the present invention further comprises a diamond disc located above the polishing pad for trimming the polishing pad, the fixing device has a fixed turntable for fixing the at least one semiconductor device, the measuring and calculating device includes a temperature sensor, and the temperature sensor is disposed on the base, the diamond disc, the fixed turntable, or is independently disposed.
Preferably, the chemical mechanical polishing system of the present invention further comprises an input device in signal connection with the temperature control unit, wherein the input device is used for a user to input command signals.
The utility model discloses a profitable effect lies in: the temperature of the grinding slurry is controlled by the temperature control unit to be guided to the grinding pad, so that the temperature of the grinding slurry is maintained stable in the whole grinding process, and the control method of the utility model can further adjust the temperature of the grinding slurry along with the advance of the process time, thereby ensuring that the grinding effect of the semiconductor element accords with the expectation and accurately controlling the planarization degree of the semiconductor element.
Drawings
FIG. 1 is a flow chart illustrating a method of controlling a first embodiment of a chemical mechanical polishing system according to the present invention;
FIG. 2 is a schematic view illustrating a chemical mechanical polishing system suitable for use in the first embodiment;
FIG. 3 is a schematic diagram illustrating another embodiment of the chemical mechanical polishing system;
FIG. 4 is a schematic view illustrating another embodiment of the chemical mechanical polishing system;
FIG. 5 is a flowchart illustrating a method of controlling a second embodiment of the chemical mechanical polishing system of the present invention; and
FIG. 6 is a schematic view illustrating a CMP system suitable for use in the second embodiment.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and examples. It should be noted that the drawings of the present invention are merely for showing the relative relationship between the structures and positions of the elements, and do not relate to the actual sizes of the elements.
Referring to fig. 1 and 2, a first embodiment of a chemical mechanical polishing system 100 for controlling a polishing process for planarizing a semiconductor device 2 is shown.
Referring to fig. 2, the cmp system 100 includes a base 3, a holding device 4, a conditioning device 5, and a slurry supply device 6.
The base 3 has a polishing pad 31 on its top surface that is rotatable and can be used to carry polishing slurry 1. Since the detailed structure of the polishing pad 31 is well known to those skilled in the art and can be varied according to requirements, it will not be described further.
The fixing device 4 is disposed above the polishing pad 31, and has a fixing turntable 41 for fixing at least one semiconductor device 2, and the surface of the at least one semiconductor device 2 to be polished is located above the polishing pad 31 in a manner facing the polishing pad 31, and can drive the at least one semiconductor device 2 to rotate relative to the polishing pad 31. Since the related structure of the fixed turntable 41 is the existing structure of a general chemical mechanical polishing system, it will not be described further herein. In addition, in the present embodiment, only one fixing plate 41 is used to fix one semiconductor element 2, but in practice, the number of fixing plates 41 used to fix each semiconductor element 2 is not limited to this number.
The dressing device 5 has a diamond plate 51 and a rotary holder 52 for holding the diamond plate 51 and driving the diamond plate 51 to rotate. The diamond disk 51 may be used to condition the polishing pad 31 to maintain the efficiency of the polishing process of the polishing pad 31. Since the detailed structure of the trimming device 5 is well known to those skilled in the art and is not the focus of the present invention, further description is omitted here.
The slurry supply device 6 is used for supplying the polishing slurry 1 to the polishing pad 31 for polishing the semiconductor device 2, and has a reservoir unit 61, a liquid supply pipe unit 62, and a temperature control unit 63.
The storage tank unit 61 has at least one storage tank 611 for storing the polishing slurry 1. The liquid supply line unit 62 has at least one supply line 621 which communicates with the corresponding storage tank 611 and can lead the polishing slurry 1 out to the polishing pad 31. The temperature control unit 63 is used for controlling the temperature of the polishing slurry 1 guided from the at least one storage tank 611, and has at least one temperature regulator 631 for controlling the temperature of the polishing slurry 1 and at least one flow controller 632 for controlling the flow rate of the polishing slurry 1.
The input device 7 is in signal connection with the temperature control unit 63, and has an input unit 71 and a display unit 72. The input unit 71 and the display unit 72 may be integrated, such as a touch display device, or may be separate devices, such as the display unit 72 may be a separate display, and the input unit 71 may be a mouse, a keyboard, etc. commonly used for input.
The input unit 71 is in signal connection with at least one temperature adjuster 631 of the temperature control unit 63 for a user to input command signals and transmit the command signals to the temperature control unit 63, and the display unit 72 is used for displaying various input results and displaying relevant parameters and results related to the manufacturing process. The temperature control unit 63 can control the at least one temperature adjuster 631 according to the received command signal to adjust the temperature of the polishing slurry 1 output to the polishing pad 31, for example: the predetermined temperature of the polishing slurry 1, the duration of the predetermined temperature, the upper and lower limits of the predetermined temperature, the temperature difference, etc.
Referring to fig. 2 again, in fig. 2, the slurry supply device 6 is illustrated by the storage tank unit 61 having a storage tank 611, the liquid supply line unit 62 having a liquid supply line 621 communicating with the storage tank 611, the temperature control unit 63 having a temperature regulator 631, and a flow controller 632, wherein the temperature regulator 631 is a temperature-controllable heat exchanger disposed on the liquid supply line 621 for regulating the temperature of the polishing slurry 1 flowing through the liquid supply line 621; the flow controller 632 is disposed at the junction of the storage tank 611 and the liquid supply pipeline 621, and is used for controlling the flow rate of the polishing slurry 1 flowing through the liquid supply pipeline 621, so that the polishing slurry 1 can be guided to the polishing pad 31 at a predetermined initial temperature after flowing through the liquid supply pipeline 621.
It should be noted that the flow controller 632 is intended to control the flow rate of the polishing slurry 1 led out to the polishing pad 31, and therefore, may be disposed on the liquid supply line 621 in addition to the junction between the storage tank 611 and the liquid supply line 621 as described above, and the disposition position thereof is not particularly limited as long as the flow rate of the polishing slurry 1 led out to the polishing pad 31 can be controlled.
It should be noted that the temperature regulator 631 may be disposed on the storage tank 611 as needed, that is, the temperature regulator 631 may be a temperature control coil, a heating pack, or the like directly connected to the storage tank 611, and may directly control the temperature of the polishing slurry 1 stored in the storage tank 611, and the position and the form of the disposition thereof are not particularly limited as long as the temperature of the polishing slurry 1 introduced into the polishing pad 31 can be controlled.
In some embodiments, the storage tank unit 61 may be provided in the form of a plurality of storage tanks 611, and the temperature control unit 63 may have a plurality of temperature regulators 631 respectively disposed in the liquid supply pipe 621 or the storage tanks 611, so as to respectively control the polishing slurry 1 stored in different storage tanks 611 to have at least two temperatures when being discharged. For example, the polishing slurry 1 may have two temperatures, i.e., a temperature lower than room temperature and a temperature lower than room temperature, or a temperature higher than room temperature and at least one temperature not greater than room temperature, respectively, so as to facilitate the subsequent adjustment of the temperature by mixing the polishing slurries 1 at different temperatures. In fig. 3, the temperature regulator 631 is correspondingly disposed in the corresponding storage tank 611, but in practice, the temperature regulator 631 may also be correspondingly disposed in the corresponding liquid supply pipeline 621, and the disclosure is not limited thereto.
As described above, when the reservoir unit 61 has a plurality of storage tanks 611, the liquid supply line unit 62 has a plurality of liquid supply lines 621 corresponding to each storage tank 611, and a main liquid supply line 622 communicating with the liquid supply lines 621, one end of the main liquid supply line 622 communicates with the liquid supply lines 621, and the polishing slurry 1 flowing from the liquid supply lines 621 into the main liquid supply line 622 and mixed to have a predetermined temperature is supplied to the polishing pad 31. The flow controller 632 is disposed on the main liquid supply pipeline 622, and is used for controlling the flow rate of the pre-mixed polishing slurry 1 with a predetermined temperature flowing onto the polishing pad 31.
It should be noted that the temperature control unit 63 may further include a plurality of flow controllers 632 respectively disposed at the junctions of the liquid supply pipelines 621 and the corresponding storage tanks 611, so that the flow controllers 632 can control the flow rates of the polishing slurries 1 from different storage tanks 611 and having different temperatures, and mix the polishing slurries 1 in the main liquid supply pipeline 622, thereby controlling the temperature of the mixed polishing slurry 1.
Referring to fig. 4, in some embodiments, the main liquid supply line 622 may not be needed, and the flow rates of the polishing slurries 1 from different storage tanks 611 may be directly controlled by the flow rate controllers 632 corresponding to each storage tank 611, so that the polishing slurries 1 with different temperatures are directly introduced into the polishing pad 31 and then mixed, or the polishing slurries 1 may have a predetermined temperature.
In the CMP process, the semiconductor device 2 is fixed to the fixed turntable 41 in a face-down manner, the polishing slurry 1 is introduced into the polishing pad 31, and the surface of the semiconductor device 2 is planarized by the polishing slurry 1 by rotating the polishing pad 31. The control method of the present invention can utilize the slurry supply device 6 of the chemical mechanical polishing system 100 to control the temperature of the polishing slurry 1 used in the CMP process, so as to further control the CMP process.
Referring again to fig. 1 and 2, a method for controlling a polishing process of the semiconductor device 2 using a first embodiment of the cmp system 100 of the present invention will now be described.
The control method includes a slurry supply step S1 and a slurry temperature adjustment step S2.
The slurry supply step S1 is to input a command signal through the input device 7, and the slurry supply device 6 can supply the polishing slurry 1 at the initial predetermined temperature associated with the command signal to the polishing pad 31 according to the command signal.
In some embodiments, the initial predetermined temperature is related to a predetermined temperature of a polishing process.
The command signal may be a process predetermined temperature of the polishing slurry 1, a duration of the process predetermined temperature, a threshold of the process predetermined temperature, a temperature difference, etc.
The slurry temperature adjusting step S2 adjusts the temperature of the polishing slurry 1 supplied to the polishing pad 31 according to the predetermined polishing process temperature.
In some embodiments, the slurry temperature adjustment step S2 controls the temperature of the polishing slurry 1 supplied to the polishing pad 31 to be based on the initial predetermined temperature and to vary with the polishing process time.
The CMP process time is generally preset to a process time and a process temperature according to the type of the semiconductor device 2 and the polishing slurry 1, and the expected polishing surface thickness and material of the semiconductor device 2. However, the CMP process is also affected by the temperature during the polishing process, which affects the overall polishing result. For example, the temperature of the polishing slurry 1 increases with the polishing time during the polishing process, and when the polishing etching reaction is an endothermic reaction, the temperature increase will increase the polishing variation and affect the control of the polishing precision; and when grinding the etching reaction for exothermic reaction, then the temperature rise can reduce the grinding speed, and increase whole processing procedure time, consequently, the utility model discloses a control method is through the in-process at the grinding promptly, carries out temperature control to this grinding thick liquids 1, offsets the temperature rise effect that the grinding process produced heat energy because of the friction, maintains the temperature balance of this grinding thick liquids 1 in the grinding process, reaches its grinding temperature's uniformity around the processing procedure to promote the precision that this CMP processing procedure ground to this semiconductor component 2.
Specifically, for example, the slurry supplying step S1 may be performed by inputting an initial predetermined temperature for allowing the highest temperature for the CMP process in advance through the input unit 71, and then the slurry temperature adjusting step S2 may be performed to control the temperature of the polishing slurry 1 introduced into the polishing pad 31 to be gradually lower than the initial predetermined temperature as the process time advances, and to control the polishing slurry 1 on the polishing pad 31 to maintain a higher operating temperature throughout the polishing process; or, the polishing slurry 1 with the initial predetermined temperature being room temperature is introduced at the initial stage of the CMP process, and then the temperature of the polishing slurry 1 introduced into the polishing pad 31 is controlled as the process time advances, so that the polishing slurry 1 on the polishing pad 31 can be maintained at the initial predetermined temperature or at room temperature throughout the polishing process; alternatively, the initial predetermined temperature of the polishing slurry 1 may be the lowest temperature allowed by the process, and then the polishing slurry 1 with the lower temperature is continuously introduced into the polishing pad 31 as the process time advances, so that the temperature rise effect of the polishing process is counteracted by the polishing slurry 1, and the lower operation temperature of the whole polishing process can be maintained, thereby improving the polishing precision control of the whole CMP process and obtaining a better planarization result.
Referring to fig. 5 and 6, the second embodiment of the chemical mechanical polishing system 200 of the present invention is similar to the first embodiment and is also used for controlling the polishing process for planarizing the semiconductor device 2. The cmp system 200 is substantially different from the cmp system 100 in terms of the device structure, in that the cmp system 200 further comprises a metrology computing device 8.
The measurement and calculation device 8 is used for measuring at least one of the temperature of the polishing pad 31, the temperature of the semiconductor device 2, the interface temperature of the semiconductor device 2 and the polishing pad 31, the temperature of the polishing slurry 1 discharged from the polishing pad 31, and the temperature of the recovered slurry of the polished polishing slurry 1, and obtaining a temperature adjustment signal according to the temperature, so that the temperature adjuster 631 of the temperature control unit 63 receives the temperature adjustment signal and controls the temperature of the polishing slurry 1 supplied to the polishing pad 31 accordingly.
In the second embodiment, the measurement calculation device 8 is disposed adjacent to the fixing device 4 and the semiconductor element 2, and has a temperature sensor 81, and a calculation controller 82. The temperature sensor 81 may be disposed on the base 3, the fixed turntable 41, the diamond disk 51, or independently, and may be a contact or non-contact temperature sensor (e.g., thermocouple, infrared temperature sensor) for measuring the interface temperature between the semiconductor device 2 and the polishing pad 31, the temperature of the polishing slurry 1 discharged from the polishing pad 31, or the temperature of the recovered polishing slurry 1 after polishing to obtain a temperature signal. The calculation controller 82 is in signal connection with the temperature sensor 81 and the temperature adjuster 631 of the temperature control unit 63, receives the temperature signal and analyzes the temperature signal to obtain the temperature adjustment signal, and transmits the temperature adjustment signal to the temperature adjuster 631 of the temperature control unit 63 to adjust the temperature of the polishing slurry 1.
In addition, in some embodiments, the measurement calculating device 8 can also be in signal connection with the input device 7 as required, so that the display unit 72 can also receive and display the temperature signal from the temperature sensor 81, which is beneficial for a user to input the command signal through the input unit 71 according to the measured temperature signal and transmit the command signal to the calculation controller 82 during a polishing process, so that the calculation controller 82 can perform analysis calculation according to the temperature signal and the command signal to obtain a temperature adjusting signal.
The control method of the chemical mechanical polishing system 200 of the present invention is substantially the same as the control method of the first embodiment, except that the control method of the second embodiment further includes a temperature measurement step S3. The temperature measuring step S3 measures at least one of the temperature of the polishing pad 31, the interface temperature between the semiconductor device 2 and the polishing pad 31, the temperature of the polishing slurry 1 discharged from the polishing pad 31, and the temperature of the recovered polishing slurry 1 after polishing to obtain a temperature signal.
The slurry temperature adjusting step S2 and the temperature measuring step S3 are performed in cooperation, and the slurry temperature adjusting step S2 obtains a temperature adjusting signal according to the process-determined temperature and the temperature signal measured in the temperature measuring step S3, and adjusts the temperature of the polishing slurry 1 supplied to the polishing pad 31 according to the temperature adjusting signal.
In detail, the slurry supplying step S1 is performed by first supplying the polishing slurry 1 having a predetermined initial temperature onto the polishing pad 31 by the slurry supplying device 6.
Then, the slurry temperature adjusting step S2 and the temperature measuring step S3 are executed in cooperation, in the temperature measuring step S3, the temperature sensor 81 of the measuring and calculating device 8 senses the temperature of the polishing pad 31, the temperature of the polishing surface of the semiconductor device 2, the interface temperature of the polishing pad 31 and the semiconductor device 2, the temperature of the polishing slurry 1 discharged from the polishing pad 31, or the temperature of the recovered slurry of the polished polishing slurry 1 in real time to obtain the temperature signal, and transmits the temperature signal to the calculation controller 82, the calculation controller 82 compares the received temperature signal with the default process temperature of the CMP process to obtain the temperature adjusting signal, and transmits the temperature adjusting signal to the temperature adjuster 631 of the temperature control unit 63; the slurry temperature adjusting step S2 is to further adjust the temperature of the polishing slurry 1 supplied to the polishing pad 31 according to the temperature adjusting signal, so as to more stably control the temperature of the polishing slurry 1 required in the CMP process.
The temperature measuring step S3 obtains the temperature adjusting signal according to the temperature signal and the process default temperature, so that the temperature adjuster 631 can adjust the temperature of the polishing slurry 1 flowing through the liquid supply pipe 621 in real time according to the temperature change of the polishing slurry 1 during the polishing process, so that the temperature rising effect of heat energy generated by friction during the polishing process can be counteracted by the polishing slurry 1 introduced into the polishing pad 31, the temperature balance of the polishing slurry 1 during the polishing process is maintained, the uniformity of the polishing temperature before and after the process is achieved, the polishing effect of the semiconductor device 2 is not affected by heat generated during the polishing process, and better stability is maintained.
To sum up, the present invention discloses the chemical mechanical polishing system 100, 200 utilizes the temperature control unit 63 to control the temperature and flow rate of the polishing slurry 1 during the polishing process, and can adjust the temperature of the polishing slurry 1 introduced into the polishing pad 31 along with the progress of the process time according to the process requirement, so as to maintain the temperature balance of the polishing slurry 1 during the polishing process, and to maintain the better stability of the polishing of the semiconductor device 2 by the chemical mechanical polishing system 100, 200, thereby accurately controlling the planarization degree thereof. In addition, the chemical mechanical polishing system 200 can also sense the temperature of the whole CMP process (e.g., the temperature of the polishing pad 31, the temperature of the semiconductor device 2, the interface temperature between the polishing pad 31 and the semiconductor device 2, the temperature of the polishing slurry 1 discharged from the polishing pad 31, or the temperature of the recovered slurry of the polishing slurry 1 after polishing) through the measurement and calculation device 8, calculate and analyze the relationship with the predetermined process temperature to obtain the temperature adjustment signal, and then control the temperature of the polishing slurry 1 led out to the polishing pad 31 in real time by using the temperature control unit 63 according to the obtained temperature adjustment signal, so as to more effectively maintain the temperature balance of the polishing slurry 1 during the polishing process, and more facilitate the control of the polishing result of the semiconductor device 2 during the CMP process, thereby achieving the objective of the present invention.
Claims (8)
1. A chemical mechanical polishing system for introducing a polishing slurry to planarize at least one semiconductor device, comprising: comprises the following steps:
a base having a rotatable polishing pad on a top surface;
the fixing device is arranged above the grinding pad and used for fixing the at least one semiconductor element and driving the at least one semiconductor element to rotate relative to the grinding pad; and
the slurry supply device is used for supplying the grinding slurry to the grinding pad so as to grind the at least one semiconductor element, and is provided with a storage tank unit for storing the grinding slurry, a liquid supply pipeline unit which is communicated with the storage tank unit and can lead the grinding slurry out to the grinding pad, and a temperature control unit which is used for controlling the temperature of the grinding slurry led out from the storage tank unit.
2. The chemical mechanical polishing system of claim 1, wherein: the temperature control unit is provided with at least one temperature regulator for controlling the temperature of the grinding slurry.
3. The chemical mechanical polishing system of claim 2, wherein: the storage tank unit is provided with at least one storage tank for storing the grinding slurry and communicating with the liquid supply pipeline unit, and the at least one temperature regulator is arranged on the liquid supply pipeline unit and used for controlling the temperature of the grinding slurry flowing through the liquid supply pipeline unit.
4. The chemical mechanical polishing system of claim 2, wherein: the temperature control unit is provided with a plurality of temperature regulators and a plurality of flow controllers, wherein the temperature regulators are respectively and correspondingly arranged on the storage tank or the liquid supply pipeline, so that the grinding slurry led out from the storage tank has at least two temperatures, and the flow controllers are respectively and correspondingly arranged on the storage tank or the liquid supply pipeline and are used for respectively controlling the flow of the grinding slurry from different storage tanks, so that the mixed grinding slurry has a preset temperature.
5. The chemical mechanical polishing system of claim 4, wherein: the liquid supply pipeline unit is also provided with a main liquid supply pipeline, one end of the main liquid supply pipeline is communicated with the liquid supply pipeline, and the grinding slurry mixed by the liquid supply pipeline flowing into the main liquid supply pipeline can be supplied to the grinding pad.
6. The chemical mechanical polishing system of claim 1, wherein: the polishing apparatus further comprises a measurement calculation device for measuring at least one of the temperature of the polishing pad, the temperature of the semiconductor device, the interface temperature of the semiconductor device and the polishing pad, the temperature of the polishing slurry discharged from the polishing pad, and the temperature of the polishing slurry recovery liquid after polishing.
7. The chemical mechanical polishing system of claim 6, wherein: the chemical mechanical polishing system further comprises a diamond disk positioned above the polishing pad for dressing the polishing pad, the fixing device is provided with a fixed turntable for fixing the at least one semiconductor element, and the measuring and calculating device comprises a temperature sensor which is arranged on the base, the diamond disk, the fixed turntable or is independently arranged.
8. The chemical mechanical polishing system of claim 1, wherein: the temperature control unit is connected with the power supply and the power supply through a power supply, and the temperature control unit is connected with the power supply through a power supply.
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| Application Number | Priority Date | Filing Date | Title |
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| TW110200522 | 2021-01-15 | ||
| TW110200522U TWM611042U (en) | 2021-01-15 | 2021-01-15 | Chemical mechanical polishing system |
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| CN215148068U true CN215148068U (en) | 2021-12-14 |
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| TW (1) | TWM611042U (en) |
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