CN214736082U - Linear PECVD (plasma enhanced chemical vapor deposition) equipment with optimized cavity setting - Google Patents
Linear PECVD (plasma enhanced chemical vapor deposition) equipment with optimized cavity setting Download PDFInfo
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- CN214736082U CN214736082U CN202120705369.8U CN202120705369U CN214736082U CN 214736082 U CN214736082 U CN 214736082U CN 202120705369 U CN202120705369 U CN 202120705369U CN 214736082 U CN214736082 U CN 214736082U
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Abstract
The utility model relates to a linear PECVD device with optimized cavity arrangement, which comprises a preheating chamber, a reaction chamber connected with the discharge end of the preheating chamber and a cooling chamber connected with the discharge end of the reaction chamber; the feed end of the preheating chamber is provided with a first sealing partition component of the preheating chamber; a first sealing partition component of the reaction chamber is arranged between the preheating chamber and the reaction chamber; a first sealing partition component of the cooling chamber is arranged between the reaction chamber and the cooling chamber; a second sealing partition component of the cooling chamber is arranged at the discharge end of the cooling chamber; the preheating chamber is composed of more than two preheating cavities which are connected in sequence; a second sealing partition component of the preheating chamber is arranged between the adjacent preheating cavities. An object of the utility model is to provide an optimize line formula PECVD equipment that cavity set up, shorten the time of placing treating that the deposit substrate exposes in the air on the support plate, make the linking beat of each cavity obtain the adjustment, the whole productivity of lifting means.
Description
Technical Field
The utility model relates to an optimize line formula PECVD equipment that cavity set up.
Background
In the preparation process of the HJT equipment product, a silicon wafer is required to be placed on a carrier plate, enters CVD vapor deposition equipment through the carrier plate to carry out plasma chemical vapor deposition reaction, ionizes gas and attaches a film on the silicon wafer. The current devices have the following problems: 1. the silicon wafer needs longer waiting time before entering CVD vapor deposition equipment, and the silicon wafer is exposed in the air for too long time, so that the overall performance of the product is influenced; 2, the working time of each chamber of the CVD vapor deposition equipment is inconsistent, so that the productivity of the whole line is influenced; 3. the plasma and by-products from different deposition chambers cross-contaminate each other, affecting product quality and performance.
Disclosure of Invention
An object of the utility model is to provide an optimize line formula PECVD equipment that cavity set up, shorten the time of placing treating that the deposit substrate exposes in the air on the support plate, make the linking beat of each cavity obtain the adjustment, the whole productivity of lifting means.
The purpose of the utility model is realized through the following technical scheme:
a linear PECVD device with optimized chamber arrangement comprises a preheating chamber, a reaction chamber connected with the discharge end of the preheating chamber and a cooling chamber connected with the discharge end of the reaction chamber; the feed end of the preheating chamber is provided with a first sealing partition component of the preheating chamber; a first sealing partition component of the reaction chamber is arranged between the preheating chamber and the reaction chamber; a first sealing partition component of the cooling chamber is arranged between the reaction chamber and the cooling chamber; a second sealing partition component of the cooling chamber is arranged at the discharge end of the cooling chamber; the preheating chamber is composed of more than two preheating cavities which are connected in sequence; a second sealing partition component of the preheating chamber is arranged between the adjacent preheating cavities.
Compare prior art, the utility model has the advantages of:
(1) through setting up the preheating chamber into a plurality of independent cavities, the structure is more reasonable, shortens the joining latency between preheating chamber and the reaction chamber, promotes the whole productivity of equipment.
(2) Through setting up the cooling chamber into a plurality of independent cavities, the structure is more reasonable, shortens the linking latency between reaction chamber and the cooling chamber, promotes the whole productivity of equipment.
(3) The buffer chamber is arranged between the reaction chambers for carrying out different deposition reactions, so that the cross contamination of plasma and byproducts is avoided, and the quality and the performance of products are improved.
Drawings
Fig. 1 is a schematic diagram of an embodiment of an in-line PECVD apparatus for optimizing chamber settings according to the present invention.
Description of reference numerals:
1-front amorphous silicon intrinsic layer loading platform I2-front amorphous silicon intrinsic layer loading platform II
3-front amorphous silicon intrinsic layer preheating cavity I and 4-front amorphous silicon intrinsic layer preheating cavity II
5-front amorphous silicon intrinsic layer reaction chamber I6-front amorphous silicon intrinsic layer reaction chamber II
7-front amorphous silicon intrinsic layer cooling cavity I8-front amorphous silicon intrinsic layer cooling cavity II
9-front amorphous silicon intrinsic layer discharging table 10-front amorphous silicon intrinsic layer unloading table
11-carrier plate transition table 12-reverse amorphous silicon intrinsic layer loading table I
13-reverse amorphous silicon intrinsic layer loading platform II 14-reverse amorphous silicon intrinsic layer preheating cavity I
15-reverse amorphous silicon intrinsic layer preheating cavity II 16-reverse amorphous silicon intrinsic layer reaction cavity I
17-reverse amorphous silicon intrinsic layer reaction cavity and two 18-reverse amorphous silicon intrinsic layer buffer cavities
19-N type film silicon layer reaction chamber 20-N type film silicon layer cooling chamber I
Two 21-N type film silicon layer cooling cavities and two 22-N type film silicon layer discharging tables
23-N type thin film silicon layer unloading platform 24-carrier plate transition platform
25-P type thin film silicon layer loading platform I26-P type thin film silicon layer loading platform II
27-P type thin film silicon layer preheating cavity I28-P type thin film silicon layer preheating cavity II
29-P type film silicon layer reaction chamber 30-P type film silicon layer cooling chamber I
Two 31-P type film silicon layer cooling cavities and two 32-P type film silicon layer discharging tables
33-P type thin film silicon layer unloading platform 41-front surface intrinsic layer first partition valve
42-front intrinsic layer second partition valve 43-front intrinsic layer third partition valve
44-fourth partition valve of front intrinsic layer 45-fifth partition valve of front intrinsic layer
46-front intrinsic layer sixth partition valve 47-front intrinsic layer seventh partition valve
51-reverse intrinsic layer first partition valve 52-reverse intrinsic layer second partition valve
53-third partition valve of intrinsic layer on reverse side 54-fourth partition valve of intrinsic layer on reverse side
55-N type thin film silicon layer fifth partition valve 56-N type thin film silicon layer sixth partition valve
57-N type thin film silicon layer seventh partition valve 58-N type thin film silicon layer seventh partition valve
59-N type thin film silicon layer seventh partition valve 61-P type thin film silicon layer first partition valve
62-P type thin film silicon layer second partition valve 63-P type thin film silicon layer third partition valve
64-P type thin film silicon layer fourth partition valve 65-P type thin film silicon layer fifth partition valve
Sixth partition valve of 66-P type thin film silicon layer
Detailed Description
A linear PECVD device with optimized chamber arrangement comprises a preheating chamber, a reaction chamber connected with the discharge end of the preheating chamber and a cooling chamber connected with the discharge end of the reaction chamber; the feed end of the preheating chamber is provided with a first sealing partition component of the preheating chamber; a first sealing partition component of the reaction chamber is arranged between the preheating chamber and the reaction chamber; a first sealing partition component of the cooling chamber is arranged between the reaction chamber and the cooling chamber; a second sealing partition component of the cooling chamber is arranged at the discharge end of the cooling chamber; the preheating chamber is composed of more than two preheating cavities which are connected in sequence; a second sealing partition component of the preheating chamber is arranged between the adjacent preheating cavities.
Each preheating cavity is provided with an independently controlled preheating device.
The cooling chamber is composed of more than two cooling cavities which are connected in sequence; and a third sealing partition component of the cooling chamber is arranged between the adjacent cooling cavities.
The reaction chamber is composed of more than two reaction cavities which are connected in sequence; a second sealing partition component of the reaction chamber is arranged between the adjacent reaction cavities.
When two adjacent reaction chambers carry out different deposition reactions, a buffer chamber is arranged between the two reaction chambers; a first sealing partition component of the buffer chamber is arranged at the feed end of the buffer chamber; and a buffer chamber second sealing partition component is arranged at the discharge end of the buffer chamber.
Each chamber is additionally controlled by an independent sealing partition assembly, so that on one hand, the functions of each chamber can be independently operated; on the other hand, in the CVD plasma sputtering process, residual gas byproducts are generated, and the pollution among all chambers can be avoided by adding the independent sealing partition assembly.
The invention is described in detail below with reference to the drawings and examples of the specification:
fig. 1 is a schematic view of an embodiment of an in-line PECVD apparatus for optimizing chamber settings according to the present invention.
An in-line PECVD device for optimizing chamber arrangement comprises a first deposition device, a second deposition device and a third deposition device; a first substrate turnover transfer device for turnover and transfer of the substrate is arranged between the first deposition device and the second deposition device, and a second substrate turnover transfer device for turnover and transfer of the substrate is arranged between the second deposition device and the third deposition device; a first carrier plate rotating device (namely a carrier plate transition table 11) for lifting and rotating the substrate carrier plate is arranged between the first deposition device and the second deposition device, and a second carrier plate rotating device (namely a carrier plate transition table 24) for lifting and rotating the substrate carrier plate is arranged between the second deposition device and the third deposition device.
The first deposition equipment comprises a first support plate lifting device, a first loading assembly connected with the discharge end of the first support plate lifting device, a first preheating chamber connected with the discharge end of the first loading assembly, a first reaction chamber connected with the discharge end of the first preheating chamber, a first cooling chamber connected with the discharge end of the first reaction chamber, and a first sheet discharging assembly connected with the discharge end of the first cooling chamber; the feeding end of the first preheating chamber is provided with a preheating chamber first sealing partition component (namely a front intrinsic layer first partition valve 41); a first sealing partition component (namely a third partition valve 43 of the front intrinsic layer) of the reaction chamber is arranged between the first preheating chamber and the first reaction chamber; a first sealing partition component (namely a fifth partition valve 45 of the front intrinsic layer) of the cooling chamber is arranged between the first reaction chamber and the first cooling chamber; and a second sealing partition component (namely a seventh partition valve 47 of the front intrinsic layer) of the cooling chamber is arranged at the discharge end of the first cooling chamber.
The first preheating chamber is composed of more than two preheating cavities (namely a front amorphous silicon intrinsic layer preheating cavity I3 and a front amorphous silicon intrinsic layer preheating cavity II 4) which are connected in sequence; a second sealing partition component (namely a second partition valve 42 of the front intrinsic layer) of the preheating chamber is arranged between the adjacent preheating cavities.
Each preheating cavity is provided with an independently controlled preheating device.
The first cooling chamber is composed of more than two cooling cavities (namely a first cooling cavity 7 of the front amorphous silicon intrinsic layer and a second cooling cavity 8 of the front amorphous silicon intrinsic layer) which are connected in sequence; and a third sealing partition assembly (namely a sixth partition valve 46 of the front intrinsic layer) of the cooling chamber is arranged between the adjacent cooling cavities.
The first reaction chamber is composed of more than two reaction cavities (namely a first reaction cavity 5 of the front amorphous silicon intrinsic layer and a second reaction cavity 6 of the front amorphous silicon intrinsic layer) which are connected in sequence; a second sealing partition component (namely a fourth partition valve 44 of the front intrinsic layer) of the reaction chamber is arranged between the adjacent reaction chambers.
The first loading assembly comprises a front amorphous silicon intrinsic layer loading table I1 and a front amorphous silicon intrinsic layer loading table II 2 which are sequentially connected.
The first wafer discharging assembly comprises a first discharging mechanism (namely a front amorphous silicon intrinsic layer discharging table 8) and a first discharging mechanism (namely a front amorphous silicon intrinsic layer discharging table 9) which are sequentially connected.
The substrate is a silicon wafer 73 on which an intrinsic layer is to be deposited.
The second deposition equipment comprises a second loading assembly, a second preheating chamber connected with the discharge end of the second loading assembly, a second reaction chamber connected with the discharge end of the second preheating chamber, a second cooling chamber connected with the discharge end of the second reaction chamber, and a second sheet discharging assembly connected with the discharge end of the second cooling chamber; the feeding end of the second preheating chamber is provided with a preheating chamber first sealing partition component (namely a reverse intrinsic layer first partition valve 51); a first sealing partition component (namely a third partition valve 53 of the reverse intrinsic layer) of the reaction chamber is arranged between the second preheating chamber and the second reaction chamber; a first sealing partition component (namely a seventh partition valve 57 of the N-type thin film silicon layer) of the cooling chamber is arranged between the second reaction chamber and the second cooling chamber; and a second sealing partition component (namely a ninth partition valve 59 of the N-type thin film silicon layer) of the cooling chamber is arranged at the discharge end of the second cooling chamber.
The second preheating chamber is composed of more than two preheating cavities (namely a first preheating cavity 14 of the reverse amorphous silicon intrinsic layer and a second preheating cavity 15 of the reverse amorphous silicon intrinsic layer) which are connected in sequence; a second sealing partition component (namely a second partition valve 52 of the reverse intrinsic layer) of the preheating chamber is arranged between the adjacent preheating cavities.
Each preheating cavity is provided with an independently controlled preheating device.
The second cooling chamber is composed of more than two cooling cavities (namely an N-type film silicon layer cooling cavity I20 and an N-type film silicon layer cooling cavity II 21) which are connected in sequence; and a third sealing partition assembly (namely a sixth partition valve 46 of the front intrinsic layer) of the cooling chamber is arranged between the adjacent cooling cavities.
The second reaction chamber is composed of more than two reaction cavities (namely a first reverse amorphous silicon intrinsic layer reaction cavity 16, a second reverse amorphous silicon intrinsic layer reaction cavity 17 and an N-type thin film silicon layer reaction cavity 19) which are connected in sequence; a second sealing partition component (namely a fourth partition valve 54 of the reverse intrinsic layer) of the reaction chamber is arranged between the adjacent reaction chambers.
When two adjacent reaction cavities carry out different deposition reactions, a buffer chamber (namely a reverse amorphous silicon intrinsic layer buffer cavity 18) is arranged between the two reaction cavities (namely a reverse amorphous silicon intrinsic layer reaction cavity II 17 and an N-type thin film silicon layer reaction cavity 19); a first sealing partition component (namely a fifth partition valve 55 of the N-type thin film silicon layer) of the buffer chamber is arranged at the feed end of the buffer chamber; and a buffer chamber second sealing partition component (namely a sixth partition valve 56 of the N-type thin film silicon layer) is arranged at the discharge end of the buffer chamber.
The second loading assembly comprises a first reverse amorphous silicon intrinsic layer loading table 12 and a second reverse amorphous silicon intrinsic layer loading table 13 which are sequentially connected.
The second discharging component comprises a second discharging mechanism (namely an N-type thin film silicon layer discharging table 22) and a second discharging mechanism (namely an N-type thin film silicon layer discharging table 23) which are connected in sequence.
The third deposition equipment comprises a third loading assembly, a third preheating chamber connected with the discharge end of the third loading assembly, a third reaction chamber connected with the discharge end of the third preheating chamber, a third cooling chamber connected with the discharge end of the third reaction chamber, a third sheet discharging assembly connected with the discharge end of the third cooling chamber, and a third carrier plate rotating device connected with the third sheet discharging assembly and used for descending and rotating the substrate carrier plate; the feed end of the third preheating chamber is provided with a preheating chamber first sealing partition component (namely a P-type thin film silicon layer first partition valve 61); a reaction chamber first sealing partition component (namely a third partition valve 63 of the P-type thin film silicon layer) is arranged between the third preheating chamber and the third reaction chamber; a first sealing partition component (namely a third partition valve 63 of the P-type thin film silicon layer) of the cooling chamber is arranged between the third reaction chamber and the third cooling chamber; and a discharge end of the third cooling chamber is provided with a second sealing partition assembly (namely a sixth partition valve 66 of the P-type thin film silicon layer) of the cooling chamber.
The third preheating chamber is composed of more than two preheating cavities (namely a first preheating cavity 27 of a P-type thin film silicon layer and a second preheating cavity 28 of the P-type thin film silicon layer) which are connected in sequence; a second sealing partition component (namely a second partition valve 62 of the P-type thin film silicon layer) of the preheating chamber is arranged between the adjacent preheating cavities.
Each preheating cavity is provided with an independently controlled preheating device.
The third cooling chamber is composed of more than two cooling cavities (namely a first P-type film silicon layer cooling cavity 30 and a second P-type film silicon layer cooling cavity 31) which are connected in sequence; and a third sealing partition assembly (namely a fifth partition valve 65 of the P-type thin film silicon layer) of the cooling chamber is arranged between the adjacent cooling cavities.
The third loading assembly comprises a first P-type thin film silicon layer loading platform 25 and a second P-type thin film silicon layer loading platform 26 which are connected in sequence.
The third discharging assembly comprises a third discharging mechanism (namely a P-type film silicon layer discharging platform 32) and a third discharging mechanism (namely a P-type film silicon layer discharging platform 33) which are connected in sequence.
The invention has the following characteristics:
1. the preheating chamber and the cooling chamber have high structural similarity, the design can be directly applied, and the design period can be shortened.
2. The preheating chamber and the cooling chamber are designed with more than two independent chambers, so that the preheating and cooling effects are improved, the preheating and cooling time of the reaction chamber is shortened, the running rhythm of the whole production line is improved, the production line runs more smoothly and reasonably, the process requirements are met, and the performance quality of products is improved; and the utilization rate of equipment is improved, the energy consumption is reduced, and the cost is saved.
3. The buffer chamber is arranged between the reaction chambers of different deposition reactions, so that the effect of isolation and buffering is achieved, cross contamination between plasma and byproducts is avoided, and the quality and performance of products are improved.
Claims (5)
1. A line type PECVD equipment for optimizing chamber setting is characterized in that: the device comprises a preheating chamber, a reaction chamber connected with the discharge end of the preheating chamber and a cooling chamber connected with the discharge end of the reaction chamber; the feed end of the preheating chamber is provided with a first sealing partition component of the preheating chamber; a first sealing partition component of the reaction chamber is arranged between the preheating chamber and the reaction chamber; a first sealing partition component of the cooling chamber is arranged between the reaction chamber and the cooling chamber; a second sealing partition component of the cooling chamber is arranged at the discharge end of the cooling chamber; the preheating chamber is composed of more than two preheating cavities which are connected in sequence; a second sealing partition component of the preheating chamber is arranged between the adjacent preheating cavities.
2. An in-line PECVD apparatus for optimizing chamber settings according to claim 1, characterized by: each preheating cavity is provided with an independently controlled preheating device.
3. An in-line PECVD apparatus for optimizing chamber settings according to claim 1, characterized by: the cooling chamber is composed of more than two cooling cavities which are connected in sequence; and a third sealing partition component of the cooling chamber is arranged between the adjacent cooling cavities.
4. An in-line PECVD apparatus for optimizing chamber settings according to any of claims 1-3, characterized in that: the reaction chamber is composed of more than two reaction cavities which are connected in sequence; a second sealing partition component of the reaction chamber is arranged between the adjacent reaction cavities.
5. An in-line PECVD apparatus for optimizing chamber settings according to claim 4, characterized in that: when two adjacent reaction chambers carry out different deposition reactions, a buffer chamber is arranged between the two reaction chambers; a first sealing partition component of the buffer chamber is arranged at the feed end of the buffer chamber; and a buffer chamber second sealing partition component is arranged at the discharge end of the buffer chamber.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120286090 | 2021-02-01 | ||
| CN202120285566 | 2021-02-01 | ||
| CN2021202860900 | 2021-02-01 | ||
| CN2021202855669 | 2021-02-01 |
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| CN202120705369.8U Active CN214736082U (en) | 2021-02-01 | 2021-04-07 | Linear PECVD (plasma enhanced chemical vapor deposition) equipment with optimized cavity setting |
| CN202120705691.0U Active CN214736083U (en) | 2021-02-01 | 2021-04-07 | Linear PECVD (plasma enhanced chemical vapor deposition) equipment for optimizing deposition cavity |
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| CN202120705691.0U Active CN214736083U (en) | 2021-02-01 | 2021-04-07 | Linear PECVD (plasma enhanced chemical vapor deposition) equipment for optimizing deposition cavity |
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| CN114672768A (en) * | 2022-03-29 | 2022-06-28 | 江苏微导纳米科技股份有限公司 | Thin film deposition apparatus |
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