CN214625041U - LED packaging structure - Google Patents
LED packaging structure Download PDFInfo
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- CN214625041U CN214625041U CN202120546234.1U CN202120546234U CN214625041U CN 214625041 U CN214625041 U CN 214625041U CN 202120546234 U CN202120546234 U CN 202120546234U CN 214625041 U CN214625041 U CN 214625041U
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Abstract
The application discloses an LED packaging structure, which relates to the technical field of semiconductors and comprises a substrate, wherein a first circuit comprising an LED chip and a second circuit comprising a Zener diode are formed on the mounting surface of the substrate; the first circuit and the second circuit are connected in parallel; the first circuit also comprises a resistor connected with the LED chip in series; the resistance enables the first circuit and the second circuit to satisfy: when the working voltage is smaller than the threshold value, the impedance of the first circuit is smaller than that of the second circuit; when the operating voltage is greater than the threshold, the impedance of the first circuit is greater than the impedance of the second circuit. This application utilizes resistance adjustment first circuit's impedance for when this LED packaging structure carries out the forward electrostatic discharge test, the impedance of first circuit is greater than the impedance of second circuit, guarantees that the second circuit that zener diode belongs to works earlier than the first circuit that LED chip belongs to, so that zener diode can play the effect of protection LED chip, avoids LED chip to damage.
Description
Technical Field
The application relates to the technical field of semiconductor correlation, in particular to an LED packaging structure.
Background
The LED chip has the characteristics of high luminous efficiency, long service life, small size and the like, is widely applied to a plurality of fields, and can be subjected to electrostatic damage in the manufacturing, transporting, assembling and using processes, so that the quality of the LED chip is influenced. Therefore, the LED chip needs to be tested for electrostatic discharge to perform electrostatic protection, so as to ensure the quality of the LED chip.
In the existing LED packaging structure, a Zener diode is connected with an LED chip in parallel to carry out reverse protection on the LED chip, so that the reverse antistatic capacity of the LED chip is improved. However, in the forward electrostatic discharge test, the LED chip is started before the zener diode under the forward test voltage, so that the zener diode cannot protect the LED chip, the LED chip is easily damaged, and the quality of the LED chip is affected.
SUMMERY OF THE UTILITY MODEL
The utility model provides a LED packaging structure can guarantee zener diode and work before the LED chip when it carries out forward electrostatic discharge test to make zener diode play the effect of protection LED chip.
In a first aspect, an embodiment of the present application provides an LED package structure, which includes:
a substrate having at least one mounting surface formed with a first circuit including an LED chip and a second circuit including a zener diode; the first circuit and the second circuit are connected in parallel;
the first circuit also comprises a resistor connected with the LED chip in series; the resistance enables the first circuit and the second circuit to satisfy: when the working voltage is smaller than the threshold value, the impedance of the first circuit is smaller than that of the second circuit; when the operating voltage is greater than the threshold, the impedance of the first circuit is greater than the impedance of the second circuit.
In the implementation process, the resistor is connected in series with the LED chip to form a first circuit, that is, the resistor is used to adjust the impedance of the first circuit, so that when the operating voltage is greater than the threshold value, the impedance of the first circuit is greater than the impedance of the second circuit. When the LED packaging structure is used for carrying out a forward electrostatic discharge test, the impedance of the first circuit is larger than that of the second circuit, and the second circuit where the Zener diode is located works before the first circuit where the LED chip is located, so that the Zener diode can play a role in protecting the LED chip and avoid the LED chip from being damaged.
In one possible embodiment, the resistance of the resistor is less than 1 Ω.
In one possible embodiment, the threshold is between 20 and 100V.
In one possible embodiment, the mounting surface is formed with first electrodes, second electrodes and conductive electrodes arranged at intervals; the LED chip is connected between the first electrode and the conducting electrode, the resistor is connected between the conducting electrode and the second electrode, and the Zener diode is connected between the first electrode and the second electrode.
In one possible embodiment, the mounting surface is formed with first electrodes, second electrodes and conductive electrodes arranged at intervals; the resistor is connected between the first electrode and the conducting electrode, the LED chip is connected between the conducting electrode and the second electrode, and the Zener diode is connected between the first electrode and the second electrode.
In one possible embodiment, the mounting surface is divided into a solid crystal region and a non-solid crystal region surrounding the periphery of the solid crystal region; the solid crystal area is provided with a first circuit and a second circuit, and the non-solid crystal area is connected with a bracket surrounding the periphery of the solid crystal area; the height of the upper surface of the LED chip is equal to or less than that of the upper surface of the bracket.
In a possible embodiment, the support is surrounded on the circumference of the base plate to form an annular region, and a transparent cover plate is arranged above the annular region, and the size of the transparent cover plate is at least larger than the minimum size of the annular region.
In a possible embodiment, the support is circumferentially enclosed in an annular region on the substrate, and an encapsulation layer is formed inside the annular region and used for encapsulating the LED chip, the resistor and the Zener diode.
In one possible embodiment, the support is a continuous structure surrounding the periphery of the solid crystal region;
or the support is a discrete structure surrounding the periphery of the solid crystal area.
In one possible embodiment, the mounting surface is divided into a solid crystal region and a non-solid crystal region surrounding the periphery of the solid crystal region; the solid crystal area is provided with a first circuit and a second circuit; the surfaces and the side parts of the LED chip, the resistor and the Zener diode are covered with packaging layers.
In one possible embodiment, the LED chip has a wavelength of less than 400 nm.
Compared with the prior art, the beneficial effects of this application are as follows at least:
the first circuit is formed by connecting the resistor and the LED chip in series, namely the impedance of the first circuit is adjusted by the resistor, so that when the working voltage is larger than a threshold value, the impedance of the first circuit is larger than that of the second circuit. When the LED packaging structure is used for carrying out a forward electrostatic discharge test, the impedance of the first circuit is larger than that of the second circuit, and the second circuit where the Zener diode is located works before the first circuit where the LED chip is located, so that the Zener diode can play a role in protecting the LED chip and avoid the LED chip from being damaged.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a top view of an LED package structure according to an embodiment of the present application;
FIG. 2 is a top view of an LED package structure according to an embodiment of the present application;
FIG. 3 is a schematic cross-sectional view taken along line A-A of the LED package structure shown in FIG. 1 or FIG. 2;
FIG. 4 is a variation of the LED package structure shown in FIG. 3;
FIG. 5 is a variation of the LED package structure shown in FIG. 3;
FIG. 6 is a variation of the LED package structure shown in FIG. 3;
fig. 7 is a circuit diagram illustrating an LED package structure according to an embodiment of the present application;
fig. 8 is a graph showing current-voltage characteristics of a circuit formed by the LED chip, the first circuit and the second circuit in an alternating current circuit according to the embodiment of the present application.
Illustration of the drawings:
100 a substrate; 110 mounting surfaces; 120 a first electrode; 130 a second electrode; 140 a conductive electrode; 150 via holes; 200LED chips; 300 resistance; a 400 zener diode; 500, supporting by a bracket; 600 bonding pads; 700 a transparent cover plate; 800 encapsulating the layers.
Detailed Description
The following description of the embodiments of the present application is provided by way of specific examples, and other advantages and effects of the present application will be readily apparent to those skilled in the art from the disclosure herein. The present application is capable of other and different embodiments and its several details are capable of modifications and variations in various respects, all without departing from the spirit of the present application.
In the description of the present application, it should be noted that the terms "upper", "lower", "inner" and "outer" and the like refer to orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships conventionally found in use of products of the application, and are used for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present application. Furthermore, the terms "first" and "second," etc. are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
In the existing LED package structure, an LED chip is connected in parallel with a zener diode, and the impedance of the LED chip is lower than that of the zener diode, that is, the starting voltage of the LED chip is lower than that of the zener diode, and the LED chip is started before the zener diode during a forward electrostatic discharge test. For the LED chip with the wavelength less than 400nm, the testing voltage when the LED chip is subjected to the forward electrostatic discharge test is more than 1000V, high working current can be generated in the testing process, and if the LED chip is started before the Zener diode, the LED chip can be damaged, and the quality of the LED chip is influenced. Therefore, the LED packaging structure is designed, the impedance of a circuit where the LED chip is located is adjusted by using the resistor, so that the impedance of the circuit where the LED chip is located is larger than that of a circuit where the Zener diode is located when the working voltage is larger than 1000V, and the problem existing in the existing LED packaging structure is solved.
According to one aspect of the present application, an LED package structure is provided. Referring to fig. 1 and 7, the LED package structure includes a substrate 100, an LED chip 200, a resistor 300, and a zener diode 400. The substrate 100 has at least one mounting surface 110, and the mounting surface 110 is formed with a first circuit including the LED chip 200 and a second circuit including the zener diode 400, the first circuit and the second circuit being connected in parallel. The first circuit further comprises a resistor 300 connected in series with the LED chip 200, wherein the resistor 300 enables the first circuit and the second circuit to satisfy: when the working voltage is smaller than the threshold value, the impedance of the first circuit is smaller than that of the second circuit; when the operating voltage is greater than the threshold, the impedance of the first circuit is greater than the impedance of the second circuit. The value of the threshold is between 20 and 100V.
The resistor 300 is connected in series with the LED chip 200 to form a first circuit, that is, the resistor 300 is used to adjust the impedance of the first circuit, and when the operating voltage is greater than the threshold value, the impedance of the first circuit is greater than the impedance of the second circuit. When the LED package structure performs a forward electrostatic discharge test, the operating voltage is greater than 1000V, the impedance of the first circuit is greater than the impedance of the second circuit, and the second circuit where the zener diode 400 is located operates before the first circuit where the LED chip 200 is located, so that the zener diode 400 can protect the LED chip 200 and prevent the LED chip 200 from being damaged.
In the present embodiment, the wavelength of the LED chip 200 is less than 400 nm.
The following describes a specific implementation structure of the LED package structure:
example 1
Referring to fig. 1 and 3, the LED package structure includes a substrate 100, an LED chip 200 and a resistor 300 connected in series, and a zener diode 400. The substrate 100 has at least a mounting surface 110, and the mounting surface 110 has a first electrode 120, a second electrode 130 and a conductive electrode 140 disposed at intervals. The surface of the substrate 100 opposite to the mounting surface 110 is provided with a bonding pad 600, and the bonding pad 600 is electrically connected to the first electrode 120 or the second electrode 130 through the via hole 150. The LED chip 200 and the resistor 300 constitute a first circuit, and the zener diode 400 constitutes a second circuit; the second circuit is connected in parallel with the first circuit, and the electrical signals in the first circuit and the second circuit are transmitted in the direction from the first electrode 120 to the second electrode 130.
Preferably, referring to fig. 1, the LED chip 200 is connected between the first electrode 120 and the conductive electrode 140, the resistor 300 is connected between the conductive electrode 140 and the second electrode 130, and the zener diode 400 is connected between the first electrode 120 and the second electrode 130. The electric signal transmission direction in the first circuit is as follows: from the first electrode 120, the light passes through the LED chip 200, then the resistor 300, and finally the second electrode 130.
As an alternative embodiment, the resistor 300 is connected between the first electrode 120 and the conductive electrode 140, the LED chip 200 is connected between the conductive electrode 140 and the second electrode 130, and the zener diode 400 is connected between the first electrode 120 and the second electrode 130. The electric signal transmission direction in the first circuit is as follows: from the first electrode 120, through the resistor 300, through the LED chip 200, and to the second electrode 130.
The conductive electrode 140 arranged at a distance from the first electrode 120 and the second electrode 130 is additionally arranged on the mounting surface 110, so that the conductive electrode 140 is connected with the LED chip 200 and the resistor 300 in series, the LED chip 200 and the resistor 300 form a first circuit, and therefore when the working voltage is larger than a threshold value, the impedance of the first circuit where the LED chip 200 is located is ensured to be larger than the impedance of the second circuit where the Zener diode 400 is located.
In one embodiment, the resistance of the resistor 300 is less than 1 Ω, and in this embodiment, the resistance of the resistor 300 is not affected by the LED chip 200 or the zener diode 400.
FIG. 8 shows a circuit formed by only LED chips, a first circuit and a second circuit in an AC circuitThe first circuit includes the LED chip 200 and the resistor 300 connected in series, and the second circuit includes the zener diode 400; the current value of the circuit formed by the LED chip is I0(ii) a The first circuit has a current value of I1(ii) a The current value of the second circuit is I2(ii) a A is the intersection point of the first circuit and the second circuit, and the voltage value corresponding to the intersection point is VA。VAThe value of (1) is the threshold value, and the threshold value is between 20 and 100V.
As can be seen from FIG. 8, when the voltage is less than VAThen, the current value I of a first circuit formed by connecting the LED chip and the resistor in series1Greater than the current value I of the second circuit formed by the Zener diode2That is, the impedance of the first circuit is smaller than that of the second circuit, the LED chip 200 operates before the zener diode 400; at a voltage greater than VAThen, the current value I of a first circuit formed by connecting the LED chip and the resistor in series1Less than the current value I of the second circuit formed by the Zener diode2I.e., the impedance of the first circuit is greater than the impedance of the second circuit, the zener diode 400 operates prior to the LED chip 200. When the LED packaging structure is used for a forward electrostatic discharge test, the working voltage is larger than 1000V, the impedance of the first circuit is larger than that of the second circuit, the Zener diode 400 works before the LED chip 200, and the LED chip 200 is prevented from being damaged.
Therefore, the resistor 300 with a resistance value smaller than 1 Ω is connected in series with the LED chip 200 to form a first circuit, which can ensure that the zener diode 400 works before the LED chip 200 during the forward electrostatic discharge test on the basis of not affecting the light emitting efficiency of the LED chip 200, so that the zener diode 400 plays a role in protecting the LED chip 200.
It should be noted that the resistance of the resistor 300 is only exemplary, the resistance of the resistor 300 may also be 0.1 to 1 Ω, or the resistance of the resistor 300 is between 1 to 2 Ω or 2 to 4 Ω, and when the forward electrostatic discharge test can be implemented on the basis of not affecting the light emitting efficiency of the LED chip 200, the resistance of the zener diode 400 working before the LED chip 200 falls within the protection range of the present application.
In one embodiment, referring to fig. 3, the upper surface of the substrate 100 is a mounting surface 110, and the mounting surface 110 is divided into a solid crystal region for forming a first circuit and a second circuit and an amorphous region surrounding the solid crystal region. The first electrode 120, the second electrode 130 and the conductive electrode 140 are formed on the solid crystal region at intervals, and the total area of the first electrode 120, the second electrode 130, the conductive electrode 140 and the interval regions among the three is 80-100% of the area of the solid crystal region. The amorphous region is connected to a support 500 surrounding the periphery of the amorphous region. The height of the upper surface of the LED chip 200 is equal to or less than the height of the upper surface of the support 500.
The support 500 is a continuous structure surrounding the periphery of the die bonding region (fig. 1); alternatively, the support 500 is a discrete structure surrounding the periphery of the die attach region (fig. 2). The support 500 is formed to surround an annular region along the circumferential direction of the substrate, and the minimum area of the annular region is larger than the area of the die bonding region and smaller than the area of the upper surface of the substrate 100. The holder 500 may be integrally formed with the substrate 100 or may be separately formed.
In one embodiment, a transparent cover 700 is overlapped above the annular region formed by the support 500, and the size of the transparent cover 700 is at least larger than the minimum size of the annular region, so that the transparent cover 700 encapsulates the LED chip 200, the resistor 300 and the zener diode 400 in the annular region formed by the support 500 in the circumferential direction of the substrate.
Preferably, the transparent cover plate 700 is connected to the upper surface of the bracket 500 by an adhesive layer. The preparation material of the bonding layer is organic glue material such as silica gel or epoxy resin, tin paste or nano silver glue.
Preferably, referring to fig. 3 and 4, the inner sidewall of the bracket 500 is a vertical sidewall or an inclined sidewall.
As an alternative embodiment, referring to fig. 5, the support 500 is formed with an encapsulation layer 800 inside an annular region formed at the circumference of the substrate, the encapsulation layer 800 covers the upper surface of the die attach region and the upper surface of the encapsulation layer 800 is flush with the upper surface of the support 500, so as to encapsulate the LED chip 200, the resistor 300 and the zener diode 400 within the annular region formed at the circumference of the substrate by the support 500. The packaging layer 800 is made of fluorine-containing resin.
Example 2
This embodiment has many features in common with embodiment 1, and is different from embodiment 1 in that: the LED package structure does not include the support 500. Here, the same features are not described one by one, and only differences are described.
Referring to fig. 6, the upper surface of the substrate 100 is a mounting surface 110, and the mounting surface 110 is divided into a die bonding region for forming a first circuit and a second circuit and an amorphous region surrounding the die bonding region. The encapsulation layer 800 is at least located in the amorphous region and covers the LED chip 200, the resistor 300, and the zener diode 400. The packaging layer 800 is made of fluorine-containing resin.
As can be seen from the above technical solutions, in the present application, the resistor 300 is connected in series with the LED chip 200 to form a first circuit, that is, the resistor 300 is used to adjust the impedance of the first circuit, so that when the operating voltage is greater than the threshold value, the impedance of the first circuit is greater than the impedance of the second circuit. When the LED package structure performs a forward esd test, the impedance of the first circuit is greater than the impedance of the second circuit, and the second circuit where the zener diode 400 is located operates before the first circuit where the LED chip 200 is located, so that the zener diode 400 can protect the LED chip 200 and prevent the LED chip 200 from being damaged.
The foregoing is only a preferred embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and substitutions can be made without departing from the technical principle of the present application, and these modifications and substitutions should also be regarded as the protection scope of the present application.
Claims (11)
1. An LED package structure, comprising:
a substrate having at least one mounting surface formed with a first circuit including an LED chip and a second circuit including a zener diode; the first circuit and the second circuit are connected in parallel;
the first circuit also comprises a resistor connected with the LED chip in series; the resistance enables the first circuit and the second circuit to satisfy: when the working voltage is smaller than the threshold value, the impedance of the first circuit is smaller than the impedance of the second circuit; when the working voltage is larger than the threshold value, the impedance of the first circuit is larger than that of the second circuit.
2. The LED package structure of claim 1, wherein the resistance of the resistor is less than 1 Ω.
3. The LED package structure of claim 1, wherein the threshold is between 20-100V.
4. The LED packaging structure according to any one of claims 1 to 3, wherein the mounting surface is formed with first electrodes, second electrodes and conductive electrodes arranged at intervals; the LED chip is connected between the first electrode and the conducting electrode, the resistor is connected between the conducting electrode and the second electrode, and the Zener diode is connected between the first electrode and the second electrode.
5. The LED packaging structure according to any one of claims 1 to 3, wherein the mounting surface is formed with first electrodes, second electrodes and conductive electrodes arranged at intervals; the resistance is connected between the first electrode and the conducting electrode, the LED chip is connected between the conducting electrode and the second electrode, and the Zener diode is connected between the first electrode and the second electrode.
6. The LED package structure of claim 1, wherein the mounting surface is divided into a die attach region and an amorphous region surrounding the die attach region; the first circuit and the second circuit are formed in the solid crystal area, and the non-solid crystal area is connected with a bracket surrounding the periphery of the solid crystal area; the height of the upper surface of the LED chip is equal to or less than that of the upper surface of the bracket.
7. The LED package structure of claim 6, wherein the frame circumferentially surrounds the substrate to form an annular region, and a transparent cover is superimposed over the annular region, the transparent cover having a size at least larger than a minimum size of the annular region.
8. The LED package structure of claim 6, wherein the support is circumferentially surrounded by a substrate to form an annular region, and an encapsulation layer is formed inside the annular region and is used for encapsulating the LED chip, the resistor and the Zener diode.
9. The LED package structure of claim 6, wherein the support is a continuous structure surrounding the periphery of the die attach region;
or the support is a discrete structure surrounding the periphery of the solid crystal region.
10. The LED package structure of claim 1, wherein the mounting surface is divided into a die attach region and an amorphous region surrounding the die attach region; the first circuit and the second circuit are formed in the die bonding area; and the surfaces and the side parts of the LED chip, the resistor and the Zener diode are covered with packaging layers.
11. The LED package structure of claim 1, wherein the LED chip has a wavelength of less than 400 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120546234.1U CN214625041U (en) | 2021-03-17 | 2021-03-17 | LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120546234.1U CN214625041U (en) | 2021-03-17 | 2021-03-17 | LED packaging structure |
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| CN214625041U true CN214625041U (en) | 2021-11-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116879702A (en) * | 2023-07-11 | 2023-10-13 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Online diagnosis method, system and device for power cycle degradation mechanism of SiC MOSFET |
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2021
- 2021-03-17 CN CN202120546234.1U patent/CN214625041U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116879702A (en) * | 2023-07-11 | 2023-10-13 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Online diagnosis method, system and device for power cycle degradation mechanism of SiC MOSFET |
| CN116879702B (en) * | 2023-07-11 | 2024-04-23 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Online diagnosis method, system and device for power cycle degradation mechanism of SiC MOSFET |
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