CN214584850U - Wafer R-axis fine setting device - Google Patents
Wafer R-axis fine setting device Download PDFInfo
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- CN214584850U CN214584850U CN202120893136.5U CN202120893136U CN214584850U CN 214584850 U CN214584850 U CN 214584850U CN 202120893136 U CN202120893136 U CN 202120893136U CN 214584850 U CN214584850 U CN 214584850U
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Abstract
The utility model relates to a precious stone wafer processing technology field especially relates to a wafer R axle fine setting device. The wafer R-axis fine-tuning device comprises a light transmission supporting part, a light source, an observation part, a first polarizer and a second polarizer, wherein the light transmission direction of the first polarizer is parallel to the vibration transmission direction of the second polarizer. The light transmission support part is provided with a first identification part and supports the bottom surface of the gem wafer, and the gem wafer can move on the light transmission support part; the light source is arranged at the bottom side of the light-transmitting support part; the first polaroid is arranged between the light-transmitting support part and the light source, and the second polaroid is arranged on the top side of the gem wafer at intervals; the observation part is arranged on the top side of the second polaroid for observing the light transmission condition of the second polaroid. The wafer R-axis fine-tuning device is a jig for searching and verifying the R-axis direction of a gem wafer, has a simple structure, is convenient to manufacture, has low cost and is beneficial to popularization and use.
Description
Technical Field
The utility model relates to a precious stone wafer processing technology field especially relates to a wafer R axle fine setting device.
Background
The corundum crystal of red, sapphire or colorless sapphire and the like belongs to the same genus, and the main chemical component of the matrix of the corundum crystal is Al2O3The most common mirror surface of the sapphire crystal mainly comprises c, a, m and r surfaces, wherein the a and m surfaces are vertical to the c surface, the included angle between the adjacent a surface and the m surface is 30 degrees, the included angle between the r surface and the c surface is 57 degrees 36 degrees, and the included angle between the r surface and the m surface is 32 degrees 24 degrees.
The R surface is a nonpolar surface in the gem crystal, the direction of the R axis is the normal direction of the R surface, and the direction of the R axis needs to be known in the installation and application of finished gem wafer products so as to meet the installation and application requirements of gem wafer slicing. Thus, it is necessary to find the R-axis direction of the piece of gemstone wafer and label it.
However, in the related art, the R-axis direction of the crystal bar can only be tested and calibrated by a professional optical detection device, and in the subsequent step of calibration, the crystal bar usually needs to be subjected to white glass processing to obtain a gem wafer. In addition, the existing professional optical detection equipment can only test the sapphire crystal bar in the R-axis direction, but cannot test the sapphire wafer in the R-axis direction, so that the R-axis of the sapphire wafer is difficult to be determined.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a wafer R axle accurate setting device to solve the technical problem of precious stone crystal finished product R axle accurate difficulty among the prior art to a certain extent.
In order to achieve the above object, the present invention provides the following technical solutions;
based on the above-mentioned purpose, the utility model provides a wafer R axle is accurate decides device, include:
a light-transmitting support having a first identification portion, the light-transmitting support for supporting a bottom surface of the gemstone wafer, the gemstone wafer being movable on the light-transmitting support;
the light source is arranged on the bottom side of the light-transmitting support part;
the observation part is arranged on the top side of the light transmission support part at intervals and used for observing the light transmission condition of the gem wafer;
the first polaroid and the second polaroid are parallel in the transmission direction, the first polaroid is arranged between the transmission supporting part and the light source, and the second polaroid is arranged between the gem wafer and the observation part.
In any of the above technical solutions, optionally, the wafer R-axis fine-tuning device further includes a mounting main body:
the mounting main body comprises a light box, an observation platform, a support piece and a working platform, wherein the observation platform is arranged at the top of the light box, and the support piece is supported between the working platform and the observation platform so as to enable the observation platform to be arranged at the top side of the working platform at intervals;
the printing opacity supporting part set up in work platform, the observation part set up in observation platform, first polaroid subsides are located the bottom of observation part, the second polaroid set up in the basal surface of printing opacity supporting part, the light source set up in the lamp house.
In any of the above technical solutions, optionally, the observation portion includes an observation tube and an observation hole;
the observation tube is connected to the observation platform, and the observation hole penetrates through the observation tube along the axial direction of the observation tube;
the first polaroid is covered at one end, close to the working platform, of the observation hole in a sealing mode.
In any of the above solutions, optionally, the wafer R-axis fine-tuning apparatus further includes:
the pad pasting, the pad pasting include the protection film with set up in the second identification portion of protection film, the protection film is used for pasting the top surface of precious stone wafer, just second identification portion corresponds to first identification portion.
In any of the above embodiments, optionally, the outline of the protection film is retracted by a first predetermined gap compared to the outline of the gemstone wafer.
In any of the above technical solutions, optionally, the working platform is provided with a receiving hole for receiving the gemstone wafer, and the light-transmitting support portion covers the bottom of the receiving hole.
In any of the above technical solutions, optionally, the light-transmitting support portion includes a support main body and a first identification ear connected to the support main body and extending to an outer side of the support main body, and the first identification portion is the first identification ear;
the accommodating hole comprises an accommodating hole part and an identification hole part which is communicated with the side wall of the accommodating hole part, the accommodating hole part is positioned at the top of the support main body, and the identification hole part is positioned at the top of the first identification ear;
the second identification part is a second identification ear which is connected with the protective film and extends towards the outer side of the protective film.
In any of the above technical solutions, optionally, the depth of the accommodating hole is not less than the sum of the thickness of the gemstone wafer and the thickness of the adhesive film;
the outline of the second mark part is retracted by a second preset gap compared with the outline of the mark hole part.
In any of the above technical solutions, optionally, the lamp box, the working platform and the observation platform are made of transparent materials respectively.
In any of the above solutions, optionally, the light source is an incandescent lamp.
Adopt above-mentioned technical scheme, the beneficial effects of the utility model are that:
the utility model provides a wafer R axle fine setting device, including printing opacity supporting part, light source, observation part and the first polaroid and the second polaroid that the direction of shaking thoroughly is parallel to each other. The transmission support part is used for supporting the bottom surface of the gem wafer, the light source is arranged at the bottom side of the transmission support part, the observation part is arranged at the top side of the transmission support part at intervals, the first polaroid is arranged between the transmission support part and the light source, the second polaroid is arranged at the top side of the gem wafer at intervals, the observation part is arranged at the top side of the second polaroid, the natural light emitted by the light source reaches the observation part after being filtered by the first polaroid, refracted by the gem wafer and filtered by the second polaroid, the observation part is used for observing the transmission condition of the second polaroid, the gem wafer can move on the transmission support part, the transmission condition of the second polaroid can be changed along with the movement of the gem wafer in the R axis direction, so that the transmission condition of the second polaroid can be known by observing the transmission condition of the second polaroid, when the transmission condition of the second polaroid is dark and light-tight, the R-axis direction of the gemstone wafer is a direction that is deflected by a predetermined angle in a counterclockwise direction from the first marker.
That is, the wafer R-axis fine-tuning device is a tool for finding and verifying the R-axis direction of the gemstone wafer. On the first hand, by regularly moving the gem wafer relative to the light-transmitting support part, when dark and light-proof are observed, the R axis direction is marked in the direction of deflecting a preset angle from the first identification part to the counterclockwise direction, the R axis direction is quickly found, the test searching method is simple, and the worker can conveniently master and operate the method, so that the R axis of the gem wafer is not required to be accurately determined by testing the R axis direction of the gem crystal bar by professional optical equipment, and various risks such as screen printing fuzziness, deviation, loss, reworking ink and incapability of retesting the R axis direction by the professional optical equipment after the gem bar is processed into the gem wafer are not required.
In the second aspect, the wafer R-axis fine-positioning device is simple in structure, convenient to manufacture, low in cost and beneficial to popularization and use.
In a third aspect, for some gemstones of which the R axis direction has been calibrated, especially gemstones of which there is a high possibility of deviation after the calibration of the R axis direction is completed, there is usually a need for verifying whether the calibration of the R axis direction is accurate, the gemstones of which the R axis direction has been calibrated are placed on the light-transmitting support in a posture of deflecting a predetermined angle in a counterclockwise direction of the first marking part, if a phenomenon of dark and dark opacity is observed by the observation part, the calibrated R axis direction is qualified, and if a phenomenon of dark and dark opacity is not observed by the observation part, the calibrated R axis direction is unqualified.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic view of a first structure of an R-axis wafer-sizing apparatus according to an embodiment of the present invention;
fig. 2 is a second schematic structural diagram of a wafer R-axis fine-tuning device according to an embodiment of the present invention;
fig. 3 is a schematic view of a first structure of a gem wafer after being refined by a wafer R-axis refining device according to an embodiment of the present invention;
fig. 4 is a second schematic structural diagram of a gem wafer after being refined by the wafer R-axis refining device according to an embodiment of the present invention.
Icon: 1-wafer R-axis fine-tuning device; 10-a mounting body; 100-a light box; 101-a working platform; 102-a viewing platform; 103-a support; 11-a receiving hole; 110-a receiving bore portion; 111-mark hole parts; 12-a first polarizer; 13-a second polarizer; 14-a light source; 15-a light transmissive support; 16-film pasting; 160-protective film; 161-a second identification ear; 2-a gemstone wafer; 17-R axis direction; 18-A axis direction; 19-an observation section; 190-a viewing aperture; 191-observation cylinder; 20-predetermined angle.
Detailed Description
The technical solution of the present invention will be described clearly and completely with reference to the accompanying drawings, and obviously, the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example one
Referring to fig. 1 to 4, the present embodiment provides a wafer R-axis refining apparatus 1 for refining the R-axis of a sapphire wafer 2 having an a-axis. Here, the gem wafer 2 having the axis direction a 18 means the gem wafer 2 in which the thickness direction of the gem wafer 2 is identical to the a axis direction 18 of the gem wafer 2 itself. One of the end faces of the gemstone wafer 2 along the axial direction is a bottom face, and the other end face is a top face. Optionally, the thickness of the gemstone wafer 2 is 3-7mm, for example, the thickness of the gemstone wafer 2 is 3mm, 4mm, 5mm, 6mm or 7 mm.
The wafer R-axis fine-tuning device 1 provided in this embodiment includes a light-transmitting support 15, a light source 14, an observation portion, a first polarizing plate 12, a second polarizing plate 13, a mounting body 10, and a film 16.
Hereinafter, the above-described components of the wafer R-axis fine adjustment device 1 will be specifically described.
In this embodiment, the light-transmitting support 15 is used to support the bottom surface of the gemstone wafer 2, the light source 14 is disposed at the bottom side of the light-transmitting support 15, the light source 14 can emit natural light to the light-transmitting support 15, and the light-transmitting support 15 has light-transmitting property, so that light can enter the gemstone wafer 2 through the light-transmitting support 15.
The transmission directions of the first polarizing plate 12 and the second polarizing plate 13 are parallel to each other, that is, both allow polarized light of the same vibration direction to be transmitted. The first polarizer 12 is disposed between the light transmissive support 15 and the light source 14, and the second polarizer 13 is disposed at an interval on the top side of the light transmissive support 15, such that the interval is used to accommodate the gemstone wafer 2 by having an interval between the second polarizer 13 and the light transmissive support 15. The natural light emitted from the light source 14 becomes a first polarized light beam through the filtering action of the first polarizer 12, the first polarized light beam becomes a second polarized light beam through the light-transmitting support portion 15 and the gemstone wafer 2, and the second polarized light beam becomes a third polarized light beam through the second polarizer 13.
The observation portion 19 is disposed on the top side of the second polarizer 13 to observe the light transmission of the second polarizer 13, and the light transmission observed in the observation portion 19 is the third polarized light beam, that is, the light transmission specifically refers to the brightness of the third polarized light beam. Alternatively, the observation section 19 is observed by human eyes so that the operator can move the gemstone wafer 2 while observing the brightness of the third polarized light beam.
Alternatively, the same type of polarizer is used for the first polarizer 12 and the second polarizer 13, and the transmission directions of the first polarizer 12 and the second polarizer 13 may be ensured to be parallel to each other by installing the first polarizer 12 and the second polarizer 13 in parallel to each other.
The gem wafer 2 can move on the light-transmitting support part 15, the R-axis direction 17 can also move along with the movement of the gem wafer 2, the second polarized light beam can change along with the change of the R-axis direction 17, and meanwhile, the brightness of the third polarized light beam can also change along with the change of the brightness, so that the direction characteristics of the R axis can be observed and judged through the brightness of the third polarized light beam.
The light-transmitting support 15 has a first mark portion, and the position of the first mark portion is fixed and does not change with the movement of the gemstone wafer 2. In view of this, when the brightness of the third polarized light beam is zero, the direction of the R axis is defined with reference to the first marker. That is, when the observation unit 19 observes that the light transmission of the gemstone wafer 2 is dark and opaque, the R-axis direction 17 of the gemstone wafer 2 can be determined to be a direction that is deflected by a predetermined angle 20 in the counterclockwise direction from the first marker.
Optionally, the first identification portion may be any structure capable of playing a role of identification, such as printing, protrusion, notch, and the like.
It is worth explaining that the size of the predetermined angle 20 is related to the position of the first marker and the kind of gemstone. The predetermined angle 20 will be different for the same gemstone wafer 2, with the position of the first mark being chosen differently. For the first mark portion at the same position, the predetermined angle 20 will be different if the kind of the gemstone wafer 2 is different.
In general, before the wafer R-axis measuring apparatus 1 measures the R-axis of a batch of gemstone wafers 2, the predetermined angle 20 is measured by: one gemstone wafer 2 in which the R axis has been accurately calibrated is extracted from the batch of gemstone wafers 2, the gemstone wafer 2 is used as a measurement gemstone wafer 2, the measurement gemstone wafer 2 is placed on the light-transmitting support 15, the light source 14 is turned on, the measurement gemstone wafer 2 is moved on the light-transmitting support 15, the light transmission of the measurement gemstone wafer 2 is observed through the observation unit 19 until the light transmission of the measurement gemstone wafer 2 is dark and opaque, the angle of the known R axis of the measurement gemstone wafer 2 deflected counterclockwise with respect to the first marker is measured, and the measured angle is the predetermined angle 20.
It will be understood that the cross-section defined as a section perpendicular to the axial direction is not limited to the cross-sectional shape of the gemstone 2, and may be circular, polygonal, or other regular or irregular shape.
In an alternative of the present embodiment, the adhesive film 16 includes a protective film 160 and a second identification portion provided to the protective film 160. The protective film 160 is attached to the top surface of the gemstone 2 and the second mark corresponds to the first mark, so that the top surface of the gemstone 2 can be protected by attaching the protective film 160 to the top surface of the gemstone 2 in the first aspect.
The second aspect can be on protective film 160 silk screen printing fine R axle direction 17 to avoid because silk screen printing causes stained to gem wafer 2, and then in gem wafer 2's use and installation, need not to clear up the silk screen printing vestige, be favorable to improving efficiency and the convenience that the customer used and installed gem wafer 2.
In a third aspect, the second identification portion is generally used for silk-screen logo or model information, and the second identification portion corresponds to the first identification portion, so that the directional pasting operation of the pasting film 16 can be completed quickly and accurately.
In the present embodiment, the outline of the protection film 160 is retracted by a first predetermined gap compared to the outline of the gemstone 2, so that the protection film 160 can be attached to the top surface of the gemstone 2 more smoothly. Optionally, the protection film 160 has a back adhesive so that the protection film 160 can be firmly attached to the top surface of the gemstone wafer 2.
In an alternative of the present embodiment, the mounting body 10 provides mounting positions for the light-transmitting support 15, the light source 14, the observation portion 19, the first polarizing plate 12, and the second polarizing plate 13 to stabilize the structure of the wafer R-axis fine adjustment apparatus 1.
The installation body 10 includes a light box 100, an observation platform 102, a support member 103 and a working platform 101, wherein the observation platform 102 is disposed on the top of the light box 100, and the support member 103 is supported between the working platform 101 and the observation platform 102, so that the observation platform 102 is disposed on the top side of the working platform 101 at intervals.
In this embodiment, optionally, the observation platform 102 and the top plate of the light box 100 are integrally formed, the working platform 101 is a plate parallel to the top plate of the light box 100, and the supporting member 103 is a supporting plate supported at the edge of the observation platform 102 and the edge of the working platform 101, so that a U-shaped working space is defined by the observation platform 102, the supporting member 103 and the working platform 101, so that a worker can conveniently take and place, move and attach the film 16 to the gemstone wafer 2 through the U-shaped working space.
Optionally, the lamp box 100, the observation platform 102, the supporting member 103 and the working platform 101 are made of transparent materials, so that other components required to have light transmittance properties can be integrally formed with the mounting body 10, specifically, the light transmittance supporting portion 15 and the working platform 101 can be integrally formed, at least a portion of the observation portion 19 can be integrally formed with the observation platform 102, and the overall structure of the wafer R axis fine-tuning device 1 can be simplified to a certain extent.
The transparent supporting part 15 is arranged on the working platform 101, the observation part 19 is arranged on the observation platform 102, the second polarizer 13 is attached to the bottom end of the observation part 19, the first polarizer 12 is arranged on the bottom surface of the transparent supporting part 15, and the light sources 14 are all arranged in the light box 100, so that the observation part 19, the second polarizer 13, the transparent supporting part 15, the first polarizer 12 and the light sources are sequentially arranged from the top to the bottom of the installation main body.
Optionally, an access window is opened at a side portion of the lamp box 100, so that a worker can complete the access and dismounting operations of the light source 14 and the first polarizer 12 through the access window.
Alternatively, the light source 14 is an incandescent lamp, and a rechargeable incandescent lamp may be used as the light source 14 in order to simplify the wiring of the incandescent lamp.
As shown in fig. 3 and 4, when the sapphire wafer 2 is a sapphire wafer and the first marker is directed forward of the work table, the predetermined angle 20 is 135 °.
In an alternative of this embodiment, the observation unit 19 includes an observation tube 191 and an observation hole 190, the observation tube 191 is connected to the observation platform 102, and the observation hole 190 penetrates the observation tube 191 in the axial direction of the observation tube 191. The connection position between the observation tube 191 and the observation platform 102 corresponds to the position of the transparent support 15, so as to align the transparent support 15 to observe the position of the gemstone 2.
The first polarizer 12 covers one end of the observation hole 190 close to the working platform 101, so that it can be ensured that all the light beams with the third polarization are within the range of the visual field obtained by the human eye through the observation tube 191, and the second polarization light beam is prevented from appearing within the visual field, thereby eliminating the influence of other light except the third polarization light beam on the observation result.
In this embodiment, one end of the observation tube 191 close to the working platform 101 may be connected to the top surface of the observation platform 102, the first polarizer 12 is attached to the top surface of the observation platform 102 corresponding to the observation tube 191, and if the observation platform 102 is made of a transparent material, the second polarized light beam can pass through the observation platform 102 and enter the first polarizer; if the viewing platform 102 is made of a non-transparent material, the viewing aperture 190 may also need to extend through the top and bottom surfaces of the viewing platform 102, so that the second polarized light beam can enter the first polarized light sheet after passing through the portion of the viewing aperture 190 corresponding to the viewing platform 102.
In an alternative of this embodiment, the work platform 101 is provided with a receiving hole 11 for receiving the gemstone wafer 2, the top opening of the receiving hole 11 communicates with the U-shaped working space, and the light-transmitting support 15 covers the bottom of the receiving hole 11.
In the present embodiment, the receiving hole 11 is configured to receive at least one rotation of the gemstone 2 in the a-axis direction 18, so as to ensure that the worker can smoothly move the gemstone 2 during the R-axis calibration process, thereby more efficiently completing the R-axis calibration.
In the present embodiment, in order to ensure that the attachment film 16 can be placed in the accommodation hole 11, the depth of the accommodation hole 11 is not less than the sum of the thickness of the gemstone wafer 2 and the thickness of the attachment film 16, and thus the alignment efficiency and accuracy of the attachment film 16 and the gemstone wafer 2 can be improved.
In an alternative of this embodiment, the light-transmitting support part 15 includes a support main body and a first identification ear connected to the support main body and extending to the outside of the support main body, and the first identification part is the first identification ear. The receiving hole 11 includes a receiving hole portion 110 and an identification hole portion 111 penetrating through a sidewall of the receiving hole portion 110, the receiving hole portion 110 is positioned at the top of the support body, and the identification hole portion 111 is positioned at the top of the first identification ear so that the identification hole portion 111 can fittingly receive the second identification ear 161.
The second mark part is a second mark lug 161 which is connected with the protective film 160 and extends towards the outer side of the protective film 160, on the one hand, the structure of the adhesive film 16 consisting of the second mark lug 161 and the protective film 160 is relatively flat, and the flatness of the adhesive film 16 adhered to the gem wafer 2 is ensured, on the other hand, the second mark lug 161 extends to the outer side of the protective film 160, so that in an adhering state, the second mark lug 161 also extends to the outer side of the gem wafer 2, and in a subsequent film tearing process, the second mark lug 161 can be used as a film tearing handle, and the film tearing efficiency is improved.
In the present embodiment, the contour of the second mark portion is retracted by a second predetermined gap compared to the contour of the mark hole portion 111 to ensure the accuracy of the film 16.
Optionally, the width of the first predetermined gap is 2-5mm and the width of the second predetermined gap is 0.03-0.2 mm.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention. Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. For example, any of the claimed embodiments may be used in any combination. The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information constitutes prior art already known to a person skilled in the art.
Claims (10)
1. An R-axis wafer-sizing device for sizing an R-axis direction of a sapphire wafer having an A-axis as an axial direction, comprising:
a light-transmitting support having a first identification portion, the light-transmitting support for supporting a bottom surface of the gemstone wafer, the gemstone wafer being movable on the light-transmitting support;
the light source is arranged on the bottom side of the light-transmitting support part;
the first polaroid and the second polaroid are parallel to each other in the transmission direction, the first polaroid is arranged between the transmission supporting part and the light source, and the second polaroid is arranged on the top side of the gem wafer at intervals;
and the observation part is arranged on the top side of the second polaroid and is used for observing the light transmission condition of the second polaroid.
2. The wafer R-axis refining device according to claim 1, further comprising a mounting body:
the mounting main body comprises a light box, an observation platform, a support piece and a working platform, wherein the observation platform is arranged at the top of the light box, and the support piece is supported between the working platform and the observation platform so as to enable the observation platform to be arranged at the top side of the working platform at intervals;
the printing opacity supporting part set up in work platform, the observation part set up in observation platform, first polaroid subsides are located the bottom of observation part, the second polaroid set up in the basal surface of printing opacity supporting part, the light source set up in the lamp house.
3. A wafer R-axis fine-tuning device as claimed in claim 2, wherein the observation portion includes an observation cylinder and an observation hole;
the observation tube is connected to the observation platform, and the observation hole penetrates through the observation tube along the axial direction of the observation tube;
the first polaroid is covered at one end, close to the working platform, of the observation hole in a sealing mode.
4. The wafer R-axis fine-tuning device of claim 2, further comprising:
the pad pasting, the pad pasting include the protection film with set up in the second identification portion of protection film, the protection film is used for pasting the top surface of precious stone wafer, just second identification portion corresponds to first identification portion.
5. The wafer R-axis refining device of claim 4, wherein the profile of the protective film is recessed by a first predetermined gap compared to the profile of the gemstone wafer.
6. The R-axis wafer sizing device as recited in claim 4, wherein the work table is provided with a receiving hole for receiving the gem wafer, and the light-transmitting support is covered at the bottom of the receiving hole.
7. The wafer R-axis fine-tuning device of claim 6, wherein the light-transmitting support comprises a support body and a first identification ear connected to the support body and extending to an outer side of the support body, the first identification portion being the first identification ear;
the accommodating hole comprises an accommodating hole part and an identification hole part which is communicated with the side wall of the accommodating hole part, the accommodating hole part is positioned at the top of the support main body, and the identification hole part is positioned at the top of the first identification ear;
the second identification part is a second identification ear which is connected with the protective film and extends towards the outer side of the protective film.
8. The wafer R-axis fine-tuning device according to claim 7, wherein the depth of the accommodating hole is not less than the sum of the thickness of the gem wafer and the thickness of the film;
the outline of the second mark part is retracted by a second preset gap compared with the outline of the mark hole part.
9. The R-axis wafer-sizing device as claimed in claim 2, wherein the lamp box, the working platform and the observation platform are made of transparent materials.
10. The wafer R-axis refining device of claim 1, wherein the light source is an incandescent lamp.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120893136.5U CN214584850U (en) | 2021-04-27 | 2021-04-27 | Wafer R-axis fine setting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120893136.5U CN214584850U (en) | 2021-04-27 | 2021-04-27 | Wafer R-axis fine setting device |
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| Publication Number | Publication Date |
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| CN214584850U true CN214584850U (en) | 2021-11-02 |
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| CN202120893136.5U Active CN214584850U (en) | 2021-04-27 | 2021-04-27 | Wafer R-axis fine setting device |
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| CN (1) | CN214584850U (en) |
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2021
- 2021-04-27 CN CN202120893136.5U patent/CN214584850U/en active Active
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