CN214428601U

CN214428601U - Detection apparatus for wafer warpage

Info

Publication number: CN214428601U
Application number: CN202120893553.XU
Authority: CN
Inventors: 卢盈; 郭伟; 曾旭
Original assignee: Guangzhou Yuexin Semiconductor Technology Co Ltd
Current assignee: Yuexin Semiconductor Technology Co.,Ltd.
Priority date: 2021-04-27
Filing date: 2021-04-27
Publication date: 2021-10-19
Anticipated expiration: 2031-04-27

Abstract

The utility model provides a detection apparatus for wafer angularity, include: the cross section of the base is circular; the side wall is connected to the base, the side wall is arranged along the edge of the base and surrounds the base, and scale marks are arranged on the side wall; and a clamping groove ring is arranged on the inner wall of the side wall and used for placing the wafer. Put the wafer on the draw-in groove ring, whether the scale mark that corresponds through the warpage of observing on the wafer exceeds the control line of settlement, if exceed, then think that the angularity exceeds standard to this detects the angularity of wafer, the utility model discloses a detection device simple structure, it is with low costs to easy operation can judge whether the angularity of wafer exceeds standard fast.

Description

Detection apparatus for wafer warpage

Technical Field

The utility model belongs to the technical field of the semiconductor technology and specifically relates to a detection apparatus for wafer angularity is related to.

Background

With the rapid development of semiconductor chip manufacturing technology, the size of a wafer is larger, the number of chips manufactured on a single wafer is larger, and the integration density of devices is also larger, which leads to the problem of warpage (warp) of the wafer to be more and more prominent. The warpage of the wafer surface is caused by many reasons, for example, because the chip manufacturing process is complicated, tens of or even hundreds of thin films need to be stacked and deposited on the wafer surface, and the wafer is warped to different degrees due to the imbalance of stress between the thin films. In addition, the trench process is widely used in the chip manufacturing process, and the trench causes the warpage problem of the wafer to be aggravated. The warping of the wafer not only causes the reduction of the pattern registration precision among different films, which leads to the reduction of the production yield, but also causes the increase of the adsorption difficulty of the wafer, which leads to the stagnation of the production operation caused by the difficulty of the moving operation of the wafer; meanwhile, the existence of the warpage can generate large stress on the wafer itself, so that the wafer is easy to crack in the process of carrying or dicing, which is especially prominent in the process of packaging in the rear section. With the continuous increase of wafer size and the increasing integration of devices, improving the warpage of the wafer, i.e. reducing the adverse effect of the warpage of the wafer on the process, is a problem to be solved in the semiconductor factory. During the production, the wafer is broken due to the excessive warpage caused by the wafer stress. Especially, the wafer slice is often abnormal in warpage after being ground.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a detection device of wafer angularity can conveniently test out whether up to standard of the angularity of wafer fast to select unqualified wafer, and then improve the quality of wafer.

In order to achieve the above object, the utility model provides a detection device of wafer angularity, include:

the cross section of the base is circular;

the side wall is connected to the base, the side wall is arranged along the edge of the base and surrounds the base, and scale marks are arranged on the side wall;

and a clamping groove ring is arranged on the inner wall of the side wall and used for placing the wafer.

Optionally, in the apparatus for detecting wafer warpage, the sidewall is provided with at least one window, the window has a first edge and a second edge, the first edge is close to the base, the second edge is far from the base, and a length of the first edge is smaller than a length of the second edge.

Optionally, in the device for detecting wafer warpage, the window is in an inverted trapezoid shape, an upper bottom is a second side, and a lower bottom is a first side.

Optionally, in the apparatus for detecting wafer warpage, the sidewall is perpendicular to the surface of the base.

Optionally, in the device for detecting wafer warpage, the slot clamping ring is circular.

Optionally, in the apparatus for detecting wafer warpage, a surface of the slot ring is parallel to a surface of the base.

Optionally, in the device for detecting wafer warpage, a certain distance is provided between the slot-locking ring and the base.

Optionally, in the device for detecting wafer warpage, a certain distance is provided between the slot clamping ring and the top of the sidewall.

Optionally, in the device for detecting wafer warpage, a scale value of the scale mark gradually increases from bottom to top along the sidewall.

Optionally, in the device for detecting wafer warpage, the scale lines include gauge lines and tubing lines.

The utility model provides an among the detection device of wafer angularity, include: the cross section of the base is circular; the side wall is connected to the base, the side wall is arranged along the edge of the base and surrounds the base, and scale marks are arranged on the side wall; and a clamping groove ring is arranged on the inner wall of the side wall and used for placing the wafer. Put the wafer on the draw-in groove ring, whether the scale mark that corresponds through the warpage of observing on the wafer exceeds the control line of settlement, if exceed, then think that the angularity exceeds standard to this detects the angularity of wafer, the utility model discloses a detection device simple structure, it is with low costs to easy operation can judge whether the angularity of wafer exceeds standard fast.

Drawings

Fig. 1 is a schematic view of a device for detecting wafer warpage according to an embodiment of the present invention;

in the figure: 110-base, 120-side wall, 130-graduation line, 131-specification line, 132-tube line, 140-clamping groove ring and 150-window.

Detailed Description

The following description of the embodiments of the present invention will be described in more detail with reference to the drawings. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in simplified form and are not to precise scale, and are provided for convenience and clarity in order to facilitate the description of the embodiments of the present invention.

In the following, the terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances. Similarly, if the method described herein comprises a series of steps, the order in which these steps are presented herein is not necessarily the only order in which these steps may be performed, and some of the described steps may be omitted and/or some other steps not described herein may be added to the method.

Referring to fig. 1, the present invention provides a device for detecting warpage of a wafer, including:

a base 110, the base 110 having a circular cross-section;

a sidewall 120 connected to the base 110, the sidewall 120 being disposed along an edge of the base 110 and surrounding the base 110, the sidewall 120 having a graduation mark 130;

a slot ring 140 is disposed on an inner wall of the sidewall 120, and the slot ring 140 is used for placing a wafer.

Further, at least one window 150 has been opened on the side wall 120, in the embodiment of the present invention, one window 150 has been opened, in other embodiments of the present invention, two or more windows 150 can be opened, if two or more windows 150 are opened, the size of the window 150 is equal or unequal. The embodiment of the utility model provides a window 150 has first limit and second limit, first limit is close to base 110, the second limit is kept away from base 110, the length on first limit is less than the length on second limit. The sidewall 120 is made of a transparent material, and may be made of transparent glass, transparent resin, or transparent plastic, for example. The transparent material is adopted to facilitate observation of the wafer placement condition in the chamber, and more importantly, the warping degree of the wafer can be observed. And the inner and outer surfaces of the sidewall 120 are polished smooth, which not only facilitates the observation of the warping degree by the operator, but also prevents the wafer from being scratched. A window 150 is formed in the sidewall 120 to facilitate access to the wafer, for example, when the wafer is placed in the chamber, the wafer can be clamped from the top of the sidewall 120 down to the notch ring 140 in the chamber, and the tool for clamping the wafer can enter and exit from the window 150. The diameter of base 110 is 306mm, and the cavity that lateral wall 120 formed is cylindrical, and the diameter of the cross section of the cavity that lateral wall 120 formed also is 306mm, in other embodiments of the utility model, the diameter of base 110.

Preferably, the window 150 has an inverted trapezoid shape, the upper bottom is the second side, and the lower bottom is the first side. That is to say, the upper bottom of the trapezoid is close to the base 110, and the lower bottom is far from the base 110, and the length of the waist is not limited, so that the trapezoid may be an isosceles trapezoid or not. Specifically, the length of the lower bottom of the trapezoid is 80mm, the length of the upper bottom is 60mm, and the height is 80 mm. In other embodiments of the present invention, the length of the upper base, the length of the lower base and the height of the trapezoid can be other values.

In the embodiment of the present invention, the sidewall 120 is perpendicular to the surface of the base 110. That is, the included angle formed between the sidewall 120 and the base 110 is 90 degrees, the scale mark 130 circles around the sidewall 120, and the scale mark 130 is parallel to the surface of the base 110, so that the warpage of the wafer can be read more accurately.

In the embodiment of the present invention, the slot ring 140 is a circular ring. The snap ring 140 may be fixed to the side wall 120, for example, when the testing device is manufactured, the snap ring 140 and the side wall 120 are integrally formed, or the snap ring 140 is fixed to the side wall 120 by adhesion after the side wall 120 is formed. Meanwhile, the slot ring 140 may also be detachably connected to the sidewall 120, for example, it may be connected to the inner wall of the sidewall 120 by a movable connection manner such as a snap. Since the snap ring 120 is circular, it is natural that the middle of the snap ring 140 is hollow and has an outer circle and an inner circle, where the difference between the radius of the outer circle and the radius of the inner circle of the snap ring 140 is 6mm, the edge portion of the wafer is placed on the snap ring 140, specifically, about 3mm of the edge of the wafer is placed on the snap ring 140, and the middle portion is suspended. Since the wafer is thin and the testing time is short, no deformation is caused. The ring is made into a shape, so that the wafer can be conveniently taken and placed. In other embodiments of the present invention, the difference between the radius of the outer circle and the radius of the inner circle of the snap ring can be other values, and the size of the wafer placed on the snap ring can also be other values. The outer circle of the snap ring 140 is the size of the cavity surrounded by the side wall, and is almost the size of the circle of the base 110.

In the embodiment of the present invention, the surface of the slot ring 140 is parallel to the surface of the base 120. The surface of the snap ring 140 is parallel to the surface of the base 110 and then parallel to the graduation mark 130, so that the test can be more accurate. Since the base 110 is theoretically certainly located on a horizontal plane, the surface of the base 110 is theoretically smooth and flat, and thus the surface of the base 110 is also parallel to the horizontal plane, when the surfaces of the notch ring 140 and the base 110 are parallel, and when a wafer is placed on the notch ring 140, the surface of the wafer is also located on the horizontal plane, so that the size of the warp on the wafer can be easily read, and at the same time, the surface of the notch ring 140 is also smoothly shaped so as not to damage the wafer.

In the embodiment of the present invention, the slot ring 140 has a certain distance from the base 110. Meanwhile, the snap ring 140 has a certain distance from the top of the sidewall 110. The distance of the snap ring 140 from the top of the sidewall 110 is 50mm, and in other embodiments of the present invention, the distance of the snap ring 140 from the top can be other values.

In the embodiment of the present invention, the scale value of the scale mark 130 is gradually increased along the sidewall 120 from bottom to top. The line from the intersection of the base 110 and the sidewall 120 is set to 0, and a scale is set at intervals from the intersection line up the sidewall 120 away from the base 120.

In the embodiment of the present invention, the graduation marks 130 include a gauge mark 131 and a control mark 132. Of course, the calibration lines 130 may not be provided from the intersection line of the base 110 and the sidewall 120, or even a plurality of calibration lines 130 may not be provided, and the gauge lines 131 and the tubing lines 132 may be provided directly according to the data and experience of a plurality of wafers before, for example, the gauge lines 131 are provided at a distance of nm from the chuck ring 140, the tubing lines 132 are provided at a distance of nm from the chuck ring 140, where the tubing lines 132 are below the gauge lines 131, and the scale value of the tubing lines 132 is smaller than that of the gauge lines 131, that is, the tubing lines 132 are closer to the chuck ring 140. When the warpage of the wafer is within the specification line 131, the warpage of the wafer is considered to be passed, and when the warpage of the wafer exceeds the control line 132, the warpage of the wafer is considered to be too large, the wafer is not qualified, and the warpage of the wafer can be improved, so that the quality of the wafer is improved. When the warpage of the wafer is read, the size of the warpage can be read by a manual reading method or a tool reading method, for example, if the warpage is read manually, the wafer can be leveled with the scale lines by eyes, and the scale lines corresponding to the tilted positions of the wafer can be observed. It is more accurate if the reading is done by a tool, and the reading is done in various ways, for example, by emitting a laser, which passes right through the location of the warp and strikes the corresponding graduation mark 130, the size of the warp can be known to determine whether the warp is within the specification line 131 or exceeds the control line 132. And the utility model discloses can also have a more convenient example, no matter read through the manual work or the instrument reads, as long as the method of reading remains unchanged, the specific position (can not have the scale interval) of having set up specification line 131 and control line 132 again, the place of direct observation wafer perk has or not in specification line 131 or exceed control line 132 just can, if have and exceed control line 132, then prove that the angularity has exceeded, this wafer is unqualified. In a word, whether the warping degree of the wafer reaches the standard or not can be tested very quickly, simply and conveniently by adopting the testing device and the testing method. The device is simple and saves money, and the test is simple and quick. Also, the gauge line 132 and gauge line 131 may be color coded so that an operator can quickly see if the warp is within the gauge line 131 or exceeds the gauge line 132, e.g., the gauge line 131 may be marked in yellow and the gauge line 132 may be marked in red.

To sum up, in the embodiment of the present invention provides a wafer warpage detection device, include: the cross section of the base is circular; the side wall is connected to the base, the side wall is arranged along the edge of the base and surrounds the base, and scale marks are arranged on the side wall; and a clamping groove ring is arranged on the inner wall of the side wall and used for placing the wafer. Put the wafer on the draw-in groove ring, whether the scale mark that corresponds through the warpage of observing on the wafer exceeds the control line of settlement, if exceed, then think that the angularity exceeds standard to this detects the angularity of wafer, the utility model discloses a detection device simple structure, it is with low costs to easy operation can judge whether the angularity of wafer exceeds standard fast.

The above description is only for the preferred embodiment of the present invention, and does not limit the present invention. Any technical personnel who belongs to the technical field, in the scope that does not deviate from the technical scheme of the utility model, to the technical scheme and the technical content that the utility model discloses expose do the change such as the equivalent replacement of any form or modification, all belong to the content that does not break away from the technical scheme of the utility model, still belong to within the scope of protection of the utility model.

Claims

1. A wafer warpage detection device, includes:

the cross section of the base is circular;

2. The apparatus for detecting wafer warpage as claimed in claim 1, wherein the sidewall has at least one window formed therein, the window having a first edge and a second edge, the first edge being close to the base, the second edge being far from the base, the first edge having a length less than the second edge.

3. The apparatus for detecting wafer warpage as claimed in claim 2, wherein the window has an inverted trapezoidal shape, the upper bottom is the second side, and the lower bottom is the first side.

4. The apparatus for detecting wafer warpage as claimed in claim 1, wherein the sidewall is perpendicular to the surface of the base.

5. The apparatus according to claim 1, wherein the notch ring has a circular ring shape.

6. The apparatus of claim 1, wherein a surface of the notch ring is parallel to a surface of the base.

7. The apparatus of claim 1, wherein a distance is provided between the notch ring and the base.

8. The apparatus of claim 1, wherein the notch ring is spaced apart from a top of the sidewall.

9. The apparatus for detecting wafer warpage as claimed in claim 1, wherein the scale marks have a scale value gradually increasing from bottom to top along the sidewall.

10. The apparatus for detecting wafer warpage as claimed in claim 1, wherein the scribe lines include gauge lines and gauge lines.