CN214542202U - Anti-overflow heat dissipation type silicon carbide diode that flows - Google Patents
Anti-overflow heat dissipation type silicon carbide diode that flows Download PDFInfo
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- CN214542202U CN214542202U CN202120544358.6U CN202120544358U CN214542202U CN 214542202 U CN214542202 U CN 214542202U CN 202120544358 U CN202120544358 U CN 202120544358U CN 214542202 U CN214542202 U CN 214542202U
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Abstract
The utility model provides an anti-overflow heat dissipation type silicon carbide diode, which comprises an insulating packaging body, wherein a silicon carbide chip, a first conducting strip and a second conducting strip are arranged in the insulating packaging body, a first ceramic seat is arranged between the silicon carbide chip and the first conducting strip, and a second ceramic seat is arranged between the silicon carbide chip and the second conducting strip; the first ceramic seat is internally provided with a first through hole and a first chip abdicating groove, the opening area of the first chip abdicating groove is larger than that of the first through hole, the silicon carbide chip is limited in the first chip abdicating groove, and a first welding layer is arranged in the first through hole; the second ceramic seat is provided with a second through hole and a second chip abdicating groove, the opening area of the second chip abdicating groove is larger than that of the second through hole, the silicon carbide chip is limited in the second chip abdicating groove, and a second welding layer is arranged in the second through hole. The utility model discloses can effectively improve the radiating effect, convenient operation of counterpointing between silicon carbide chip and the ceramic seat, the difficult overflow that takes place of welding material.
Description
Technical Field
The utility model relates to a diode specifically discloses a heat dissipation type carborundum diode of anti-overflow.
Background
The silicon carbide diode generally refers to a silicon carbide schottky diode, and the basic structure of a silicon carbide diode chip is a bottom ohmic contact layer, a silicon carbide substrate, a silicon carbide epitaxial layer, a schottky contact layer and a top ohmic contact layer.
In the prior art, a silicon carbide diode chip is packaged in an insulating packaging material such as epoxy resin, and the like, and the silicon carbide diode chip can only realize heat dissipation by directly contacting with the insulating packaging material, so that the heat dissipation performance is poor, and the loss generated during working is large; and when the silicon carbide diode is subjected to die bonding, the requirements on the dosage of welding materials and the accuracy of alignment are high, and the production cost is high.
SUMMERY OF THE UTILITY MODEL
Therefore, it is necessary to provide an anti-overflow heat dissipation type silicon carbide diode, which has a small difficulty in die bonding of an internal structure, a stable and reliable overall structure, and good heat dissipation performance, in view of the problems of the prior art.
In order to solve the prior art problem, the utility model discloses an anti-overflow heat dissipation type silicon carbide diode, which comprises an insulating packaging body, wherein a silicon carbide chip is arranged in the insulating packaging body, a first conducting strip and a second conducting strip which run through the insulating packaging body are arranged on the upper side and the lower side of the silicon carbide chip, a first ceramic seat positioned in the insulating packaging body is arranged between the silicon carbide chip and the first conducting strip, and a second ceramic seat positioned in the insulating packaging body is arranged between the silicon carbide chip and the second conducting strip;
a first through hole is formed in the first ceramic seat, one end of the first through hole is connected with a first chip abdicating groove, the opening area of the first chip abdicating groove is larger than that of the first through hole, the bottom of the silicon carbide chip is limited in the first chip abdicating groove, and a first welding layer for connecting the silicon carbide chip and the first conducting strip is arranged in the first through hole;
the second ceramic seat is internally provided with a second through hole, one end of the second through hole is connected with a second chip abdicating groove, the opening area of the second chip abdicating groove is larger than that of the second through hole, the top of the silicon carbide chip is limited in the second chip abdicating groove, and a second welding layer for connecting the silicon carbide chip and the second conducting strip is arranged in the second through hole.
Furthermore, a plurality of first copper particles are arranged in the first welding layer, and a plurality of second copper particles are arranged in the second welding layer.
Further, the first conducting strip comprises a main body portion and a lower convex portion, the main body portion is located in the insulating packaging body, the first welding layer is connected to the main body portion, and the lower convex portion protrudes out of the insulating packaging body.
Further, the second conducting strip comprises a platform part, an inclined part and a contact part, the platform part is located in the insulating packaging body, the second welding layer is connected below the platform part, the inclined part penetrates through the side wall of the insulating packaging body, and the contact part is located outside the insulating packaging body.
Furthermore, the inner wall of the first chip abdicating groove is covered with a first sealing layer, and the inner wall of the second chip abdicating groove is covered with a second sealing layer.
Further, first sealing layer and second sealing layer are heat conduction silica gel layer.
Furthermore, a first U-shaped limiting strip is fixed on one side, away from the silicon carbide chip, of the first ceramic seat, and the first conducting strip is limited in the first U-shaped limiting strip; and a second U-shaped limiting strip is fixed on one side of the second ceramic seat, which is far away from the silicon carbide chip, and a second conducting strip is limited in the second U-shaped limiting strip.
The utility model has the advantages that: the utility model discloses a heat dissipation type silicon carbide diode of anti-overflow flows, both sides at the silicon carbide chip are provided with special ceramic seat structure, can effectively improve the radiating effect of silicon carbide chip during operation, reduce the loss that the during operation produced, can effectively improve the working property of silicon carbide diode, and be provided with in the ceramic seat and step down groove and through-hole structure for the chip, convenient operation of counterpointing between silicon carbide chip and the ceramic seat, difficult emergence overflow when pouring into welding material such as tin cream, the solid brilliant degree of difficulty of inner structure is little, overall structure is reliable and stable.
Drawings
Fig. 1 is a schematic view of the internal structure of the present invention.
Fig. 2 is a schematic perspective view of the first ceramic seat and the second ceramic seat of the present invention.
Fig. 3 is a schematic perspective view of the first ceramic seat and the second ceramic seat of the present invention at another viewing angle.
The reference signs are: the package comprises an insulating package body 10, a silicon carbide chip 20, a first welding layer 21, a first copper particle 211, a second welding layer 22, a second copper particle 221, a first conductive sheet 30, a main body portion 31, a lower convex portion 32, a second conductive sheet 40, a platform portion 41, an inclined portion 42, a contact portion 43, a first ceramic seat 50, a first through hole 51, a first chip abdicating groove 52, a first sealing layer 521, a first U-shaped limiting strip 53, a second ceramic seat 60, a second through hole 61, a second chip abdicating groove 62, a second sealing layer 621 and a second U-shaped limiting strip 63.
Detailed Description
For further understanding of the features and technical means of the present invention, as well as the specific objects and functions attained by the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.
Refer to fig. 1 to 3.
The embodiment of the utility model discloses anti-overflow heat dissipation type silicon carbide diode, including insulating packaging body 10, be equipped with silicon carbide chip 20 in insulating packaging body 10, silicon carbide chip 20 is silicon carbide diode chip, the upper and lower both sides of silicon carbide chip 20 are equipped with first conducting strip 30 and second conducting strip 40 that run through insulating packaging body 10, be equipped with first ceramic seat 50 that is located insulating packaging body 10 between silicon carbide chip 20 and first conducting strip 30, be equipped with second ceramic seat 60 that is located insulating packaging body 10 between silicon carbide chip 20 and second conducting strip 40;
a first through hole 51 is formed in the first ceramic seat 50, one end of the first through hole 51, which is close to the silicon carbide chip 20, is connected with a first chip abdicating groove 52, the opening area of the first chip abdicating groove 52 is larger than that of the first through hole 51, and the central axis of the first chip abdicating groove 52 is collinear with the central axis of the first through hole 51, that is, the cross section of the hole structure formed by the first chip abdicating groove 52 and the first through hole 51 is "T" shaped, so that a reliable tin paste spacing effect can be formed, the bottom of the silicon carbide chip 20 is limited in the first chip abdicating groove 52, the length and width of the silicon carbide chip 20 are equal to those of the first chip abdicating groove 52, a first welding layer 21 for connecting the bottom electrode of the silicon carbide chip 20 and the first chip 30 is arranged in the first through hole 51, and preferably, the first welding layer 21 is a tin layer;
the second ceramic seat 60 is provided with a second through hole 61, one end of the second through hole 61 close to the silicon carbide chip 20 is connected with a second chip abdicating groove 62, the opening area of the second chip abdicating groove 62 is larger than that of the second through hole 61, and the central axis of the second chip abdicating groove 62 is collinear with the central axis of the second through hole 61, that is, the cross section of the hole structure formed by the second chip abdicating groove 62 and the second through hole 61 is inverted "T" shape, so that a reliable tin paste spacing effect can be formed, the top of the silicon carbide chip 20 is limited in the second chip abdicating groove 62, the length and width of the silicon carbide chip 20 is equal to that of the second chip abdicating groove 62, the second through hole 61 is provided with a second welding layer 22 connecting the top electrode of the silicon carbide chip 20 and the second conductive sheet 40, and preferably, the second welding layer 22 is a tin paste layer.
Solid crystal encapsulation the utility model discloses during, place first ceramic seat 50 on first conducting strip 30 earlier, pour into welding material such as tin cream into first through-hole 51 again, then impress silicon carbide chip 20 in first chip groove 52 of stepping down, realize the plastic processing to tin cream in first through-hole 51, form first welding layer 21 after the welding material solidification in first through-hole 51, because first chip groove 52 of stepping down carries out effectual spacing to silicon carbide chip 20, can effectively avoid the tin cream in first through-hole 51 to spill over all around, and silicon carbide chip 20's counterpoint convenient operation, silicon carbide chip 20's bottom can be effectively wrapped up all around by first ceramic seat 50, thereby obtain good insulation and heat dispersion; after the silicon carbide chip 20 and the first conducting plate 30 are connected, the second ceramic base 60 is placed on the silicon carbide chip 20, namely the top of the silicon carbide chip 20 is inserted into the second chip abdicating groove 62, the contraposition operation is convenient, the periphery of the top of the silicon carbide chip 20 can be effectively wrapped by the second ceramic base 60, so that good insulation and heat dissipation performance can be obtained, the periphery of the silicon carbide diode can be effectively limited by the second ceramic base 60, the welding material on the top of the silicon carbide diode can be effectively prevented from overflowing to the bottom, the reliability of an internal conductive structure can be effectively ensured, then welding materials such as tin paste and the like are injected into the second through hole 61, then the second conducting plate 40 is pressed on the second ceramic base 60, the shaping processing of the tin paste in the second through hole 61 is realized, and the welding material in the second through hole 61 is solidified to form the second welding layer 22; and finally, placing the welded structure into an injection mold for injection molding and packaging to obtain the silicon carbide diode with good heat dissipation performance and stable and reliable internal structure.
In this embodiment, the first welding layer 21 is provided with a plurality of first copper grains 211, the second welding layer 22 is provided with a plurality of second copper grains 221, and the first copper grains 211 and the second copper grains 221 are metal copper particles, so that the mechanical strength of the welding layer can be effectively improved, and the heat conduction and the electric conduction performance of the welding layer can be improved.
In the present embodiment, the first conductive sheet 30 includes a main body 31 and a lower protrusion 32 that are integrally formed, the main body 31 is located inside the insulating package 10, the first solder layer 21 is connected to the main body 31, and the lower protrusion 32 protrudes out of the insulating package 10 for connection with a pad of a PCB.
In this embodiment, the second conductive sheet 40 includes a terrace portion 41, an inclined portion 42 and a contact portion 43, which are integrally formed, the terrace portion 41 is located in the insulating package 10, the second solder layer 22 is connected below the terrace portion 41, the inclined portion 42 penetrates through a sidewall of the insulating package 10, and the contact portion 43 is located outside the insulating package 10 and is used for being connected to a pad of a PCB board.
In this embodiment, the inner wall of the first chip abdicating groove 52 is covered with the first sealing layer 521, and the inner wall of the second chip abdicating groove 62 is covered with the second sealing layer 621, so that the overflow of the soldering layer in the molding process can be further avoided by the sealing layer, and the reliability of the internal structure of the silicon carbide diode can be further improved.
Based on the above embodiment, the first sealing layer 521 and the second sealing layer 621 are both heat-conducting silica gel layers, the heat-conducting silica gel has good elasticity, and can effectively ensure the sealing and flow-blocking performance, and the heat-conducting silica gel has good heat-conducting performance, and can effectively ensure the heat dissipation performance of the silicon carbide chip 20.
In this embodiment, a first U-shaped limiting strip 53 is fixed on a side of the first ceramic seat 50 away from the silicon carbide chip 20, preferably, the first U-shaped limiting strip 53 and the first ceramic seat 50 are an integrally formed structure, and have good heat conduction and insulation performance, and the first conducting strip 30 is limited in the first U-shaped limiting strip 53, so that alignment can be conveniently performed, and meanwhile, the heat dissipation performance of the overall structure can be effectively improved; one side of the second ceramic seat 60 far away from the silicon carbide chip 20 is fixed with a second U-shaped limiting strip 63, preferably, the second U-shaped limiting strip 63 and the second ceramic seat 60 are of an integrally formed structure and have good heat conduction and insulation performance, the second conducting strip 40 is limited in the second U-shaped limiting strip 63, alignment can be conveniently carried out, and meanwhile, the heat dissipation performance of the overall structure can be effectively improved.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (7)
1. An overflow-proof heat dissipation type silicon carbide diode comprises an insulating packaging body (10), wherein a silicon carbide chip (20) is arranged in the insulating packaging body (10), a first conducting strip (30) and a second conducting strip (40) which penetrate through the insulating packaging body (10) are arranged on the upper side and the lower side of the silicon carbide chip (20), and the overflow-proof heat dissipation type silicon carbide diode is characterized in that a first ceramic seat (50) which is positioned in the insulating packaging body (10) is arranged between the silicon carbide chip (20) and the first conducting strip (30), and a second ceramic seat (60) which is positioned in the insulating packaging body (10) is arranged between the silicon carbide chip (20) and the second conducting strip (40);
a first through hole (51) is formed in the first ceramic seat (50), one end of the first through hole (51) is connected with a first chip abdicating groove (52), the opening area of the first chip abdicating groove (52) is larger than that of the first through hole (51), the bottom of the silicon carbide chip (20) is limited in the first chip abdicating groove (52), and a first welding layer (21) for connecting the silicon carbide chip (20) and the first conducting strip (30) is arranged in the first through hole (51);
be equipped with second through-hole (61) in second ceramic seat (60), the one end of second through-hole (61) is connected with second chip groove (62) of stepping down, the open area of second chip groove (62) of stepping down is greater than the open area of second through-hole (61), the top of silicon carbide chip (20) spacing in second chip groove (62) of stepping down, be equipped with in second through-hole (61) and connect silicon carbide chip (20) with second welding layer (22) of second conducting strip (40).
2. An anti-overflow heat dissipation silicon carbide diode as recited in claim 1, wherein the first solder layer (21) has a plurality of first copper grains (211) disposed therein, and the second solder layer (22) has a plurality of second copper grains (221) disposed therein.
3. An anti-overflow heat dissipation type silicon carbide diode according to claim 1, wherein the first conductive sheet (30) comprises a main body portion (31) and a lower protrusion (32), the main body portion (31) is located inside the insulating package (10), the first solder layer (21) is connected to the main body portion (31), and the lower protrusion (32) protrudes out of the insulating package (10).
4. The anti-flooding heat dissipation type silicon carbide diode according to claim 1 or 3, wherein the second conductive sheet (40) comprises a terrace portion (41), an inclined portion (42) and a contact portion (43), the terrace portion (41) is located inside the insulating package (10), the second solder layer (22) is connected below the terrace portion (41), the inclined portion (42) penetrates through a sidewall of the insulating package (10), and the contact portion (43) is located outside the insulating package (10).
5. The anti-overflow heat dissipation type silicon carbide diode according to claim 1, wherein an inner wall of the first chip relief groove (52) is covered with a first sealant (521), and an inner wall of the second chip relief groove (62) is covered with a second sealant (621).
6. An anti-overflow heat dissipation type silicon carbide diode according to claim 5, wherein the first sealant layer (521) and the second sealant layer (621) are both heat conductive silicone layers.
7. The anti-overflow heat dissipation type silicon carbide diode of claim 1, wherein a first U-shaped limiting strip (53) is fixed to a side of the first ceramic seat (50) far away from the silicon carbide chip (20), and the first conducting strip (30) is limited in the first U-shaped limiting strip (53); and a second U-shaped limiting strip (63) is fixed on one side of the second ceramic seat (60) far away from the silicon carbide chip (20), and the second conducting strip (40) is limited in the second U-shaped limiting strip (63).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120544358.6U CN214542202U (en) | 2021-03-16 | 2021-03-16 | Anti-overflow heat dissipation type silicon carbide diode that flows |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120544358.6U CN214542202U (en) | 2021-03-16 | 2021-03-16 | Anti-overflow heat dissipation type silicon carbide diode that flows |
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| CN214542202U true CN214542202U (en) | 2021-10-29 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114378388A (en) * | 2022-02-11 | 2022-04-22 | 张云柱 | Method for fully automatically assembling supporting piece in backlight source |
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2021
- 2021-03-16 CN CN202120544358.6U patent/CN214542202U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114378388A (en) * | 2022-02-11 | 2022-04-22 | 张云柱 | Method for fully automatically assembling supporting piece in backlight source |
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