CN214529317U - Adjustable temperature measuring device for silicon carbide crystal growth furnace - Google Patents
Adjustable temperature measuring device for silicon carbide crystal growth furnace Download PDFInfo
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- CN214529317U CN214529317U CN202120730140.XU CN202120730140U CN214529317U CN 214529317 U CN214529317 U CN 214529317U CN 202120730140 U CN202120730140 U CN 202120730140U CN 214529317 U CN214529317 U CN 214529317U
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Abstract
An adjustable temperature measuring device for a silicon carbide crystal growth furnace relates to a temperature measuring device. The utility model aims to solve the technical problems that the prior infrared thermometer is time-consuming and labor-consuming in fixed adjustment, the temperature measuring point cannot be changed and the measuring error is large when monitoring the temperature in the process of growing silicon carbide single crystal by PVT method, and the adjustable temperature measuring device of the utility model comprises a base, an electric rotating device, a connecting bracket, a steering rod, a steering motor and an infrared thermometer; wherein the electric rotating device is fixed on the base; the connecting bracket is fixed on the electric rotating device and is two hollow pipes, and the connecting bracket can rotate along with the electric rotating device; one end of the steering rod is connected with a steering motor, the steering motor is arranged in one hollow tube of the connecting bracket, the other end of the steering rod penetrates into the other hollow tube of the connecting bracket, and the steering rod can be controlled to rotate by the steering motor; the infrared thermometer is fixed in the center of the steering rod. The measuring point of the device can be adjusted on the graphite crucible cover at will, and the device is used in the field of temperature measurement.
Description
Technical Field
The utility model relates to a temperature measuring device.
Background
In the prior art, silicon carbide as a novel wide bandgap semiconductor material has excellent physical and electrical properties, is particularly suitable for manufacturing high-temperature, high-frequency, high-power, anti-radiation, short-wavelength light-emitting and photoelectric integrated devices, and has excellent application prospects in the fields of microelectronics and photoelectronics.
The physical vapor transport method is a common method for growing silicon carbide single crystals, and the growth method is realized by the following steps: the silicon carbide seed crystal and the silicon carbide source powder are respectively arranged at the top and the bottom of the same closed crucible, the silicon carbide source powder at the bottom is in a high-temperature area, the silicon carbide seed crystal at the top is in a low-temperature area, the silicon carbide source powder at the bottom is sublimated and upwards transported at the high temperature of over 2200 ℃, and the silicon carbide seed crystal is crystallized at the low-temperature silicon carbide seed crystal. The temperature monitoring in the process of growing the silicon carbide single crystal by the physical vapor transport method is carried out by adopting an infrared thermometer, the temperature is measured by a skylight at the top of the furnace, the infrared thermometer is fixed at the top of the reaction furnace by using a caliper and other devices, the angle of the caliper is readjusted after the crucible is placed every time, or the angle of a front reflector of the infrared thermometer is adjusted to find the central point of the graphite crucible cover for measuring the temperature. The mode wastes time and labor when the calipers are manually adjusted every time, and the temperature measuring point cannot be changed in the reaction process after the adjustment is finished, so that the temperature monitoring is not favorable; meanwhile, the incidence angle is adjusted by utilizing the reflector, and the infrared rays pass through the reflector and generate errors on the measured temperature.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a when solving the temperature of current infrared radiation thermometer control physics gaseous phase transmission method long carborundum single crystal in-process, waste time and energy, can not change the technical problem that temperature measurement point, measuring error are big during fixed adjustment, and provide an adjustable temperature measuring device for the long brilliant stove of carborundum.
The utility model discloses an adjustable temperature measuring device for a silicon carbide crystal growth furnace, which comprises a base 1, an electric rotating device 2, a connecting bracket 3, a steering rod 4, a steering motor 5 and an infrared thermometer 6;
wherein the electric rotating device 2 is fixed on the base 1; the connecting bracket 3 is fixed on the electric rotating device 2, the connecting bracket 3 is two hollow pipes, and the connecting bracket 3 can rotate 360 degrees in the horizontal plane along with the electric rotating device 2;
one end of a steering rod 4 is connected with a steering motor 5, the steering motor 5 is arranged in one hollow tube of the connecting bracket 3, the other end of the steering rod 4 penetrates into the other hollow tube of the connecting bracket 3, and the steering rod 4 can be controlled by the steering motor 5 to rotate; the infrared thermometer 6 is fixed in the center of the steering rod 4.
Further, the steering motor 5 is a micro motor;
furthermore, the connecting bracket 3 may also be a solid tube, which is grooved at the position where it contacts the steering rod 4, and one side is used for mounting the steering motor 5 and the other side is used for carrying the steering rod 4.
The utility model discloses an adjustable temperature measuring device's application method for long brilliant stove of carborundum, place this temperature measuring device in the top of the temperature measurement window 8 of the long brilliant stove glass casing 7 of PVT, rotate through steering column 4 and drive infrared thermometer 6 in vertical plane 90 degrees rotations, electric rotary device 2 drives infrared thermometer 6 in the horizontal plane 360 degrees rotations simultaneously, make infrared ray 11 that infrared thermometer jetted out pass temperature measurement window 8 and shine each position at graphite crucible 9 top, reach the purpose that electric regulation made 6 temperature measurement angles of infrared thermometer, also can automatically regulated in the reaction process, conveniently change the measuring point position, make the measuring point cover arbitrary adjustment at graphite crucible, record each point temperature. The utility model discloses an adjustable temperature measuring device for long brilliant stove of carborundum has saved the speculum, has avoided the error that the regulation speculum produced, can accurate temperature measurement, realizes infrared thermoscope multi-angle temperature measurement, has improved the control precision to crystal growth process.
The utility model discloses an adjustable temperature measuring device for long brilliant stove of carborundum can realize the regulation to the thermoscope through electric control, need not dismantle labour saving and time saving at every turn. Through measuring the temperature of each point of the graphite crucible cover, the temperature field information of the graphite crucible cover can be formed to guide temperature regulation, compared with the original mode of measuring the temperature of one point of the center of the graphite crucible, the method has the advantages that the monitoring of the growth process is more accurate, and the crystal growth quality is improved.
The utility model discloses an adjustable temperature measuring device for long brilliant stove of carborundum can be used to the temperature monitoring field.
Drawings
FIG. 1 is a schematic structural view of an adjustable temperature measuring device for a silicon carbide crystal growth furnace according to the present invention;
FIG. 2 is a schematic view of the connection structure of a connecting bracket 3, which is partially cut open, a steering rod 4 and a steering motor 5 in the adjustable temperature measuring device for the silicon carbide crystal growth furnace of the present invention;
FIG. 3 is a state diagram of an adjustable temperature measuring device for a silicon carbide crystal growth furnace in use;
the device comprises a base 1, an electric rotating device 2, a connecting support 3, a steering rod 4, a steering motor 5, an infrared thermometer 6, a PVT crystal growth furnace glass cover 7, a temperature measurement window 8, a graphite crucible 9, a graphite crucible base 10 and infrared rays emitted by the infrared thermometer 11.
Detailed Description
The beneficial effects of the present invention are verified with the following examples:
example 1: the utility model discloses an adjustable temperature measuring device for a silicon carbide crystal growth furnace, which comprises a base 1, an electric rotating device 2, a connecting bracket 3, a steering rod 4, a steering motor 5 and an infrared thermometer 6;
wherein the electric rotating device 2 is fixed on the base 1; the connecting bracket 3 is fixed on the electric rotating device 2, the connecting bracket 3 is two hollow pipes, and the connecting bracket 3 can rotate 360 degrees in the horizontal plane along with the electric rotating device 2;
the steering motor 5 is a micro motor; one end of the steering rod 4 is connected with a steering motor 5, and a hollow pipe of the connecting bracket 3 is provided with a hole at a position corresponding to the steering rod 4 and used for bearing the steering rod 4; another hollow pipe of the connecting bracket 3 is provided with a hole at the position corresponding to the steering motor 5 and is used for fixedly installing the steering motor 5, and the steering rod 4 can be controlled by the steering motor 5 to rotate; the infrared thermometer 6 is fixed in the center of the steering rod 4.
The method for measuring the temperature of the crystal growth furnace by using the adjustable temperature measuring device for the silicon carbide crystal growth furnace in the embodiment 1 comprises the following steps: the temperature measuring device is placed above a temperature measuring window 8 of a PVT crystal growth furnace glass cover 7, an electric rotating device 2 is started to rotate within the range of 360 degrees in the horizontal plane, a steering motor 5 is started to drive a steering rod 4 to rotate within a vertical plane by 90 degrees, so that an infrared thermometer 6 is controlled to rotate within the vertical plane by 90 degrees, infrared rays 11 emitted by the infrared thermometer penetrate through the temperature measuring window 8 to irradiate each position of the top of a graphite crucible 9, the purpose of electrically adjusting the temperature measuring angle of the infrared thermometer 6 is achieved, automatic adjustment can be achieved in the reaction process, the position of a measuring point is convenient to change, the measuring point can be adjusted on the graphite crucible cover at will, and the temperature of each point is measured. The utility model discloses an adjustable temperature measuring device for long brilliant stove of carborundum has saved the speculum, has avoided the error that the regulation speculum produced, can accurate temperature measurement, realizes infrared thermoscope multi-angle temperature measurement, has improved the control precision to crystal growth process.
The adjustable temperature measuring device for the silicon carbide crystal growth furnace can realize accurate temperature control of the silicon carbide crystal growth furnace, and improves the control level of the crystal growth process, thereby improving the quality of crystal growth.
Claims (3)
1. An adjustable temperature measuring device for a silicon carbide crystal growth furnace is characterized by comprising a base (1), an electric rotating device (2), a connecting support (3), a steering rod (4), a steering motor (5) and an infrared thermometer (6);
wherein the electric rotating device (2) is fixed on the base (1); the connecting support (3) is fixed on the electric rotating device (2), the connecting support (3) is two hollow pipes, and the connecting support (3) can rotate 360 degrees in the horizontal plane along with the electric rotating device (2);
one end of the steering rod (4) is connected with a steering motor (5), the steering motor (5) is arranged in one hollow tube of the connecting support (3), the other end of the steering rod (4) penetrates into the other hollow tube of the connecting support (3), and the steering rod (4) can be controlled by the steering motor (5) to rotate; the infrared thermometer (6) is fixed in the center of the steering rod (4).
2. The adjustable temperature measuring device for the silicon carbide crystal growth furnace according to claim 1, wherein the steering motor (5) is a micro motor.
3. The adjustable temperature measuring device for the silicon carbide crystal growth furnace according to claim 1 or 2, characterized in that the connecting bracket (3) is a solid tube, is slotted at the position contacted with the steering rod (4), and is used for installing the steering motor (5) at one side and bearing the steering rod (4) at the other side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120730140.XU CN214529317U (en) | 2021-04-12 | 2021-04-12 | Adjustable temperature measuring device for silicon carbide crystal growth furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120730140.XU CN214529317U (en) | 2021-04-12 | 2021-04-12 | Adjustable temperature measuring device for silicon carbide crystal growth furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214529317U true CN214529317U (en) | 2021-10-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120730140.XU Active CN214529317U (en) | 2021-04-12 | 2021-04-12 | Adjustable temperature measuring device for silicon carbide crystal growth furnace |
Country Status (1)
| Country | Link |
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| CN (1) | CN214529317U (en) |
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2021
- 2021-04-12 CN CN202120730140.XU patent/CN214529317U/en active Active
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