CN206385275U - Two-dimensional material Van der Waals epitaxy grows and modification system - Google Patents
Two-dimensional material Van der Waals epitaxy grows and modification system Download PDFInfo
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- CN206385275U CN206385275U CN201720018837.8U CN201720018837U CN206385275U CN 206385275 U CN206385275 U CN 206385275U CN 201720018837 U CN201720018837 U CN 201720018837U CN 206385275 U CN206385275 U CN 206385275U
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Abstract
The utility model is related to the growth of two-dimensional material Van der Waals epitaxy and modification system.Conventional two-dimensional material growing system is expensive, and feature is single.Two-dimensional material Van der Waals epitaxy growth of the present utility model includes body and the multi-temperature zone constant temperature oven of the part around the body with modification system, the plasma producing apparatus for being arranged on the part around the body in multi-temperature zone constant temperature oven downstream can also be included, multiple source carrier gas interfaces are provided with upstream closure disk at the upstream open of body, so as to introduce many introduces a collection carrier gas into body.System of the present utility model has relatively low cost, and operation and maintenance is all very convenient, can be applied to growth and the modification of two-dimensional material.
Description
Technical field
The utility model relates generally to field of material preparation, more specifically it relates to a kind of two-dimensional material Van der Waals
Epitaxial growth and modification system, it has relatively low cost, and operation and maintenance is all very convenient.
Background technology
In recent years, two-dimensional material increasingly attracts the interest of researcher due to its unique property.Two-dimensional material is
Refer to electronics only can in two non-nanos level dimensions (>100nm) material of free movement (plane motion), such as graphene, MoS2
Deng.Many new physical phenomenons are presented in two-dimensional material, thus new material, device etc. can be developed again.With two-dimentional material
Expect also to turn into study hotspot therewith for the hetero-junctions of base unit.Traditionally, the growth of heterojunction structure mainly uses molecular beam
Epitaxial deposition equipment (MBE) is carried out, and this equipment typically relies on ultrahigh vacuum growing environment, very expensive, and growth chamber
Maintenance it is time-consuming and complicated.Similar equipment also includes organic Metal chemical vapor deposition equipment (MOCVD), and it also has these to lack
Fall into.
Utility model content
Accordingly, it is desired to provide a kind of material Preparation equipment, it can prepare the film or heterojunction structure of two-dimensional material, and
And with relatively low cost, operation and maintenance is all very convenient.It is also desirable that the equipment can have a variety of functions, such as to sample
Original position doping and phase transformation etc., with the scientific research for meeting two-dimensional material or industrial various needs.
An exemplary embodiment of the present utility model provides a kind of two-dimensional material Van der Waals epitaxy growth
System, including：Body, it, which has to be welded with upstream open and downstream opening, upstream open at upstream flange, downstream opening, welds
There is downstream flange, the body is supported on pipe body support；Upstream blocks disk, for being connected to the upstream flange to seal
There are multiple source gas-carrier pipeline interfaces on the body, the upstream closure disk；Downstream blocks disk, for being connected to the downstream
Flange vacuumizes interface and sample support rod interface to seal to have on the body, the downstream closure disk；And multi-temperature zone
Constant temperature oven, around to heat a part for the body, the multi-temperature zone constant temperature oven at least has along the extension side of the body
To the first warm area and the second warm area of setting.
In one example, the system also includes：Plasma producing apparatus, is arranged on the downstream of the multi-temperature zone constant temperature oven
And around a part for the body.
In one example, the plasma producing apparatus is included around the coil of the body and for fixing the line
The coil brace of circle, the coil brace includes Part I and Part II, in the Part I and the Part II
Surfaces opposite to each other on there are multiple depressions for corresponding to each other so that when the Part I and the Part II are fixed
To together when, the coil is clamped and fixed in the depression.
In one example, the multi-temperature zone constant temperature oven and the plasma producing apparatus are all supported on guide rail, are made
Obtaining the multi-temperature zone constant temperature oven and the plasma producing apparatus can slide independently along the bearing of trend of the body.
In one example, the multi-temperature zone constant temperature oven includes Part I and Part II, and the Part II passes through hinge
Chain is connected to the Part I so as to be rotated around the axle of the hinge, the phase of the Part I and the Part II
To surface on have depression with accommodate be provided with heating element heater in the body, the depression with formed first warm area and
Second warm area, is separated between first warm area and second warm area by heat-barrier material.
In one example, second warm area has many sub- warm areas that the bearing of trend along the body is set, each
There is independent heating element heater and temperature control equipment to realize independent temperature control for sub- warm area and first warm area.
In one example, the system also includes：Many root gas-carrier pipelines, it is clamped respectively is connected to the multiple source load
In air pipe interface and extend in the body；And sample support rod, it is clamped and is connected to the sample support rod
In interface and extend in the body.
In one example, the body is columnar quartz ampoule, and the upstream flange and the downstream flange are all stone
Great Britain and France are blue, and the upstream closure disk and downstream closure disk are all metal closure disk, the upstream closure disk and the upstream
Between the flange and downstream is blocked to be additionally provided with O-ring to realize sealing therebetween between disk and the downstream flange
Connection, the source gas-carrier pipeline is quartz ampoule, and the sample support rod is quartz ampoule or quartz rod.
In one example, the system also includes：Upstream for supporting the upstream closure disk blocks disc carrier；And use
Disc carrier is blocked in the downstream for supporting the downstream closure disk.
In one example, each of upstream closure disc carrier and downstream closure disc carrier be arranged on guide rail with
It can be slided along the bearing of trend of the body.
Two-dimensional material Van der Waals epitaxy growth of the present utility model can be used for two-dimensional material such as stone with modification system
Black alkene, MoS2Deng growth and modification, can be used in making the heterojunction structure for including two-dimensional material, and cost is low,
Operation and maintenance is convenient, therefore with very high application value.
Brief description of the drawings
Fig. 1 be grown according to the two-dimensional material Van der Waals epitaxy of the embodiment of the utility model one it is whole with modification system
Body structural representation.
Fig. 2 is the schematic diagram being connected between quartz ampoule and upstream and downstream closure disk according to the embodiment of the utility model one.
Fig. 3 is the schematic diagram of the quartzy pipe holder according to the embodiment of the utility model one.
Fig. 4 is the diagrammatic cross-section of the multi-temperature zone constant temperature oven according to the embodiment of the utility model one.
Fig. 5 is the schematic cross sectional views of the coil brace according to the embodiment of the utility model one.
Fig. 6 is the schematic diagram that disk and downstream closure disc carrier are blocked according to the downstream of the embodiment of the utility model one.
Fig. 7 is the schematic diagram that disk is blocked according to the downstream of the embodiment of the utility model one, shows sample mounted thereto
Product support rod and the sample stage supported by the sample support rod.
Fig. 8 is the schematic diagram that disk and upstream closure disc carrier are blocked according to the upstream of the embodiment of the utility model one.
Fig. 9 is the schematic diagram of the clamping interface according to the embodiment of the utility model one.
Embodiment
Exemplary embodiment of the present utility model described below with reference to accompanying drawings.
Fig. 1 shows to be grown and modification system according to the two-dimensional material Van der Waals epitaxy of the embodiment of the utility model one
Overall structure diagram.As shown in figure 1, the system includes body 10, it can have a drum, thus with upstream open and
Solderable be connected to solderable at upstream flange 11, downstream opening is connected to downstream flange 12 at downstream opening, upstream open.It should be understood that pipe
Material of the body 10 preferably by high temperature resistant and with high leakproofness is made.In a preferred embodiment of the present utility model, body 10
Can be the quartz ampoule of drum, upstream and downstream flange 11 and 12 can be welded onto the quartz flange on quartz ampoule 10, below
It will be described as example.However, it is understood that body 10 can also be the body of other materials, and there can be other shapes
Shape, such as square barrel shape, generally rectangular barrel shape, oval barrel shape.Quartz ampoule 10 can be supported in the He of pipe body support 13
On 14, pipe body support 13 and 14 can be respectively positioned at the upstream end of quartz ampoule 10 nearby and near downstream.It should be understood that can be with
Including greater number of pipe body support to support quartz ampoule 10.
The upstream open and downstream opening of quartz ampoule 10 can block disk 15 by upstream respectively and downstream blocks disk 16 close
Envelope.Fig. 2 shows the example being tightly connected between up/down trip closure disk 15/16 and up/down trip flange 11/12.Such as Fig. 2 institutes
Show, being swum in face of up/down for up/down trip closure disk 15/16 could be formed with recess R, O-ring (Fig. 2 on the surface of flange 11/12
In be shown as " O ") can be entrapped in the recess R, O-ring and up/down trip flange 11/12 between can scribble vacuum grease.Work as quartz ampoule
When being evacuated in 10, external atmosphere pressure is compressed between up/down trip closure disk 15/16 and up/down being swum flange 11/12, from
And play sealed effect.In further embodiments, up/down can also be swum using the fastener of such as fixture etc and blocked
Disk 15/16 is fastened on up/down trip flange 11/12.
With continued reference to Fig. 1, there are multiple source gas-carrier pipeline interfaces on upstream closure disk 15.Multiple source gas-carrier pipelines, its
It can be quartz ampoule, can be clamped and be installed in these interfaces and extend to inside quartz ampoule 10.Source carrier gas quartz ampoule
The one end being deep into quartz ampoule 10 can be mounted with possible solid source materials, for growth deposition process.In some quartz ampoules 10
It can also can be used for what modification or etching were generated without possible solid source materials, such as the source gas-carrier pipeline for hydrogen, hydrogen
Two-dimensional material.On the other hand, can be with sample support rod interface, sample support rod on downstream closure disk 16, it can be stone
English pipe or quartz rod, can be clamped and be installed in sample support rod interface and extend to inside quartz ampoule 10.Sample is supported
One end being deep into quartz ampoule 10 of bar can be supported with sample stage, and the wafer for growing two-dimensional material can be placed in the sample
In sample platform.
In certain embodiments, closure disk 15 in upstream can be supported by upstream closure disc carrier 17, and downstream closure disk 16 can
To be supported by downstream closure disc carrier 18, support 17 and 18 will be described in detail later.
Multi-temperature zone constant temperature is also included according to two-dimensional material Van der Waals epitaxy of the present utility model growth and modification system
Stove 19, it can surround quartz ampoule 10 and the possible solid source materials region in heated quarty tube 10 and sample area.Multi-temperature zone is permanent
Warm stove 19 has at least two warm areas, i.e. the first warm area and the second warm area, and it will be described in more detail below.
Plasma producing apparatus 20 is also provided with the downstream of multi-temperature zone constant temperature oven 19, it includes surrounding quartz ampoule
10 coil, such as copper coil.Plasma producing apparatus 20 can be not only used for the growth depositional phase of two-dimensional material, for example
For growing and adulterating, but also can be after growth is completed, the inwall for cleaning quartz ampoule 10 for example passes through hydrogen, argon
The material that plasma is deposited on the inwall to remove quartz ampoule 10.
In certain embodiments, multi-temperature zone constant temperature oven 19 and plasma producing apparatus 20 may be mounted at rail plate 21
On so that they can be slided independently along quartz ampoule 10.For example, during loading sample and taking out sample, multi-temperature zone constant temperature
Stove 19 can slide into side so that operating personnel observe sample, and after completing to load sample, multi-temperature zone constant temperature oven 19 can be with
Sample position is slided into be heated.The slip of plasma producing apparatus 20 can adjust it the distance between with sample,
So as to adjust plasmon power to growth or the influence of modification.On the other hand, the slip of plasma producing apparatus 20
Also help with plasma to clean the various pieces of quartz ampoule 10.In addition, upstream closure disc carrier 17 and downstream closure disk
Support 18 may be mounted on rail plate 22, so as to the mobile upstream and downstream closure disk on the bearing of trend of quartz ampoule 10,
In order to which it is installed and uninstalled.
Fig. 3 is the schematic diagram of the quartzy pipe holder according to the embodiment of the utility model one, and it can be used for the quartz shown in Fig. 1
Pipe holder 13 and 14.As shown in figure 3, quartzy pipe holder may include upper fixture 23 and lower clamp 24, opened with circle therebetween
Mouthful so that quartz ampoule 10 to be gripped wherein.Upper fixture 23 and lower clamp 24 can be supported in many (such as two) pillars
On 25, the lower end of pillar 25 can be threadably connected on base 26, and base 26 can be placed on ground.Upper fixture 23 and lower clamp
24 can be fastened on pillar 25 by nut, and its upper-lower height can be adjusted by nut position.It is appreciated that
Previously described rail plate 21,22 can also be fixed on base plate 26, and damping is also provided between base 26 and ground
Device such as rubber blanket.
Fig. 4 is the diagrammatic cross-section of the multi-temperature zone constant temperature oven according to the embodiment of the utility model one, and it can be shown in Fig. 1
Multi-temperature zone constant temperature oven 19.As shown in figure 4, multi-temperature zone constant temperature oven may include to be provided with heat-insulating heat-preserving material in housing 27, housing
28.Although it is not shown, housing 27 and insulation material 28 can be divided into above and below two parts, and pass through up and down between two parts
Hinge (such as loose-leaf) connection can the rotation of around hinge axle so as to upper part.There can be semicircle on two-part relative surface up and down
The depression of shape, so as to when upper part is buckled on lower part, form circular channel to accommodate quartz ampoule 10.Semi-cylindrical canyon it is interior
Heating element heater such as resistance wire can be provided with wall with heated quarty tube 10.In the example depicted in fig. 4, heating element heater is set
In two warm areas of multi-temperature zone constant temperature oven, i.e. the first warm area 29 and the second warm area 30 pass through therebetween heat-barrier material part
31 separate.Wherein, the second warm area 30 can have many sub- warm areas again, such as first, second, and third son temperature shown in Fig. 4
Area 32,33 and 34.Each warm area or sub- warm area can have single heating element heater such as resistance wire, and can be by single temperature
Control device is controlled, such as with single thermocouple 35.
It is appreciated that the first warm area 29 and the second warm area 30 can correspond to different temperature ranges.For example, the first warm area
29 can keep constant temperature, the second warm area 30 to keep permanent in the range of being spent 0 to 1200 in the range of 0 to 700 degree Celsius
Temperature.For example operationally, some temperature that the first warm area 29 can be in 100 to 250 degrees Celsius of scope keeps constant temperature, second
Three sub- warm areas of warm area 30 can keep constant temperature in identical or different temperature spot in 450 to 950 degree Celsius ranges.In fortune
During row, the temperature difference that the first warm area 29 may be between the second warm area 30 is larger, and such as the first warm area 29 corresponds to low-temperature space, and the
Two warm areas 30 correspond to high-temperature region, so being separated with heat-barrier material part 31 therebetween.And three sons of the second warm area 30
Warm area is due to all in high-temperature region, although in different temperature, but need not be separated with heat-barrier material.It should also be understood that
Although Fig. 1 shows that possible solid source materials are arranged in the first warm area 29, sample stage is arranged on the second sub- warm area of the second warm area 30
In 33, but the utility model not limited to this.For example, a variety of different possible solid source materials can be placed in different warm areas or son
In warm area.Certainly, sample stage should be arranged on the downstream of possible solid source materials, consequently facilitating performing deposition process.
Fig. 5 is the schematic cross sectional views of the coil brace according to the embodiment of the utility model one, and the coil brace can be used for
With fixed coil in plasma producing apparatus 20.As it was previously stated, the coil of plasma producing apparatus 20 may because of by
Heat and deform upon, so as to change the inductance of coil, and then the power of the plasma produced by influenceing.Reference picture 5, the coil
Support may include to have between two parts 36 and 37 relative to each other, two parts equidistant circle cavity to accommodate and fixing line
Circle.It can be fixed by screw together between two parts 36 and 37, and coil brace can be further secured to by screw
On the housing of gas ions generating means 20.Coil brace can be made up of insulation heat proof material, for example, can be made up of bakelite.
Fig. 6 is the schematic diagram that disk and downstream closure disc carrier are blocked according to the downstream of the embodiment of the utility model one.Such as Fig. 6
Shown, downstream blocks disk 16 and supported by downstream closure disc carrier 18, and is sealably coupled to downstream flange 12.Downstream support 18
Including the sliding block 39 on guide rail 22 and the pillar on sliding block 39 38, sliding block 39 can be slided on guide rail 22,
It can also be fixed by screw on guide rail 22.The upper end of pillar 38 has fine adjustment stage 40, and closure tries to get to the heart of a matter seat 41 installed in micro-
On leveling platform 40, downstream closure disk 16 is tried to get to the heart of a matter on seat 41 installed in closure.Fine adjustment stage 40 can adjust downstream closure disk 16
Height and the angle of pitch, this fine adjustment stage 40 are that known to association area, its internal detailed construction is not detailed herein.
Fig. 7 is the schematic diagram that disk 16 is blocked according to the downstream of the embodiment of the utility model one, is shown mounted thereto
Sample support rod 45 and the sample stage 47 supported by the sample support rod 45.As shown in fig. 7, solderable on downstream closure disk 16
Vacuumize interface 42, measurement interface 43 and sample support rod interface 44.It can be example to vacuumize interface 42 and measurement interface 43
Such as standard K F interface, such as KF25 interfaces, it can be attached or seal by standard clip, joint, blind plate etc..Vacuumize and connect
Mouth 42 can be connected to vaccum-pumping equipment, such as vavuum pump for example, by bellows.Measurement interface 43 can connect various measurements
Equipment, such as vacuum meter.Sample support rod interface 44 can be clamping interface, and it will come further in detail below in reference to Fig. 9
Thin description.Sample support rod 45 can be clamped in sample support rod interface 44 and extend in quartz ampoule 10.Sample
Product support rod 45 can be quartz ampoule or quartz rod, and its one end being deep into quartz ampoule 10 can have frosted male plug head 46,
It, which may be inserted into, is connected in the shank of sample stage 47.Sample stage 47 includes shank and is connected to the round plate of shank, round plate
On can place the wafer for depositing two-dimensional material, such as sapphire wafer.
Fig. 8 is the schematic diagram that disk 15 and upstream closure disc carrier 17 are blocked according to the upstream of the embodiment of the utility model one.
As shown in figure 8, closure disc carrier 17 in upstream can be arranged on rail plate 22 by sliding block 48, sliding block 48 can be on guide rail 22
Slide, can also be fixed by screw on guide rail 22.Upstream closure disc carrier 17 may include the underframe 49 for being installed to sliding block 48,
Two pillars 50 can be installed on underframe 49 and the liter of pillar 50 can for example be controlled with screw with lifting moving
Drop.The upper end of pillar 50 is supported with upper frame 51, and closure is provided with thereon and is tried to get to the heart of a matter seat 52, and upstream closure disk 15 can be installed by screw
Tried to get to the heart of a matter seat 52 to closure.
The peripheral region of upstream closure disk 15, which has, sets O-ring " O " in a groove to ensure between upstream flange 11
It is tightly connected.Multiple interfaces are also provided with upstream closure disk 15, for example, measures interface 53, vacuum breaker and air pressure adjustment and connects
Mouth 54 and multiple source carrier gas interfaces 55.Measurement interface 53 can be used for for example connecting vacuum measuring device, and vacuum breaker is adjusted with air pressure
Section interface 54 can connect air pressure adjustment pipeline.Around source carrier gas interface 55 may include a central source carrier gas interface 55g and be multiple
Source carrier gas interface 55a to 55f, for being passed through similar and different source carrier gas by multiple individual passages.Different source carrier gas
It can be used for different purposes, such as growth, doping, modification, therefore system of the present utility model can realize abundant work(
Energy.It should be understood that upstream closure disk 15 can include more or less source carrier gas interfaces.Carrier gas interface in source can also be that clamping connects
Mouthful.
Fig. 9 is the schematic diagram of the clamping interface according to the embodiment of the utility model one, and it can be applied to be such as, but not limited to
Source carrier gas interface 55 shown in sample support rod 45, Fig. 8 shown in Fig. 7 etc..As shown in figure 9, clamping interface may include tubulose base
Seat 56, its through hole peripheral region that can be soldered on such as upstream and downstream closure disk, the distal end (non-solder end) of tubular base 56 can
There is screw thread with car.During installation, such as the quartz ampoule for source gas-carrier pipeline can be plugged into tubular base 56, and O-ring can cover
On quartz ampoule, then O-ring positioning support 57 can also be enclosed on quartz ampoule, and nut 58 may be screwed to the screw thread of tubular base 56
On end, to the extruding O-ring positioning support 57 of tubular base 56, and then extruded towards the gap between quartz ampoule and tubular base 56
O-ring so that between O-ring and quartz ampoule, O-ring and positioning support 57 between and O-ring and tubular base 56 between
It is in sealing contact.When quartz ampoule is used as source gas-carrier pipeline, positioning support 57 can have the through hole passed through for quartz ampoule, such as Fig. 9
As shown；When quartz ampoule is used as the sample support rod shown in Fig. 7, the outer end of positioning support 57 can be integral hermetic,
So as to realize sealed interface.
Some embodiments of the present utility model are described above.It should be understood that the utility model is not limited to these implementations
Example, but various modifications, change can be carried out and substituted.For example, interface described above can use various in the prior art
Suitable interface, as long as meeting the requirement of sealing or ventilation.Scope of the present utility model is by appended claims and its waits
Valency thing is defined.
Claims (10)
1. a kind of two-dimensional material Van der Waals epitaxy growth and modification system, it is characterised in that the system includes：
Body, it, which has to be welded with upstream open and downstream opening, upstream open at upstream flange, downstream opening, is welded with down
Flange is swum, the body is supported on pipe body support；
Upstream blocks disk, and for being connected to the upstream flange to seal the body, the upstream is blocked on disk with multiple
Source gas-carrier pipeline interface；
Downstream blocks disk, takes out true for being connected to the downstream flange to seal to have on the body, the downstream closure disk
Null interface and sample support rod interface；And
Multi-temperature zone constant temperature oven, around to heat a part for the body, the multi-temperature zone constant temperature oven at least has along the pipe
The first warm area and the second warm area that the bearing of trend of body is set.
2. two-dimensional material Van der Waals epitaxy growth as claimed in claim 1 and modification system, it is characterised in that the system
Also include：
Plasma producing apparatus, is arranged on the downstream of the multi-temperature zone constant temperature oven and around a part for the body.
3. two-dimensional material Van der Waals epitaxy growth as claimed in claim 2 and modification system, it is characterised in that described etc.
Gas ions generating means includes around the coil of the body and the coil brace for fixing the coil, the coil brace
Including Part I and Part II, have each other in the surfaces opposite to each other of the Part I and the Part II
Corresponding multiple depressions, so that when the Part I and the Part II are secured together, the coil is clamped solid
It is scheduled in the depression.
4. two-dimensional material Van der Waals epitaxy growth as claimed in claim 2 and modification system, it is characterised in that described many
Warm area constant temperature oven and the plasma producing apparatus are all supported on guide rail so that the multi-temperature zone constant temperature oven and described etc.
Gas ions generating means can be slided independently along the bearing of trend of the body.
5. two-dimensional material Van der Waals epitaxy growth as claimed in claim 1 and modification system, it is characterised in that described many
Warm area constant temperature oven include Part I and Part II, the Part II be hinged to the Part I so as to
Enough axles around the hinge rotate, and have depression on the relative surface of the Part I and the Part II to accommodate
State and be provided with heating element heater in body, the depression to form first warm area and second warm area, first warm area
Separated between second warm area by heat-barrier material.
6. two-dimensional material Van der Waals epitaxy as claimed in claim 5 growth and modification system, it is characterised in that described the
Two warm areas have many sub- warm areas that the bearing of trend along the body is set, and every sub- warm area and first warm area have only
Vertical heating element heater and temperature control equipment are to realize independent temperature control.
7. two-dimensional material Van der Waals epitaxy growth as claimed in claim 1 and modification system, it is characterised in that the system
Also include：
Many root gas-carrier pipelines, it is clamped and is connected in the multiple source gas-carrier pipeline interface and extends to the pipe respectively
In body；And
Sample support rod, it is clamped and is connected in the sample support rod interface and extends in the body.
8. two-dimensional material Van der Waals epitaxy growth as claimed in claim 7 and modification system, it is characterised in that the pipe
Body is columnar quartz ampoule, and the upstream flange and the downstream flange are all quartz flanges, the upstream closure disk and institute
It is all metal closure disk to state downstream closure disk, and the upstream is blocked between disk and the upstream flange and downstream closure disk
O-ring is additionally provided between the downstream flange to realize being tightly connected therebetween, the source gas-carrier pipeline is quartz
Pipe, the sample support rod is quartz ampoule or quartz rod.
9. two-dimensional material Van der Waals epitaxy growth as claimed in claim 1 and modification system, it is characterised in that the system
Also include：
Upstream for supporting the upstream closure disk blocks disc carrier；And
Downstream for supporting the downstream closure disk blocks disc carrier.
10. two-dimensional material Van der Waals epitaxy growth as claimed in claim 1 and modification system, it is characterised in that described
Upstream blocks disc carrier and downstream closure each of disc carrier is arranged on guide rail with can be along the extension side of the body
To slip.
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| CN201720018837.8U CN206385275U (en) | 2017-01-09 | 2017-01-09 | Two-dimensional material Van der Waals epitaxy grows and modification system |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107655929A (en) * | 2017-08-10 | 2018-02-02 | 全球能源互联网研究院 | A kind of multi-temperature zone tube furnace |
| WO2019184747A1 (en) * | 2018-03-26 | 2019-10-03 | 湖南大学 | Reaction chamber device for dual-gasflow growth of two-dimensional material |
| CN110331442A (en) * | 2019-08-07 | 2019-10-15 | 深圳市中科墨磷科技有限公司 | A kind of additional thermal field device of aided two-dimensional black phosphorus crystal growth and its application |
| TWI839916B (en) * | 2022-08-24 | 2024-04-21 | 大陸商西安奕斯偉材料科技股份有限公司 | A method for epitaxial growth and epitaxial wafer |
-
2017
- 2017-01-09 CN CN201720018837.8U patent/CN206385275U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107655929A (en) * | 2017-08-10 | 2018-02-02 | 全球能源互联网研究院 | A kind of multi-temperature zone tube furnace |
| WO2019184747A1 (en) * | 2018-03-26 | 2019-10-03 | 湖南大学 | Reaction chamber device for dual-gasflow growth of two-dimensional material |
| CN110331442A (en) * | 2019-08-07 | 2019-10-15 | 深圳市中科墨磷科技有限公司 | A kind of additional thermal field device of aided two-dimensional black phosphorus crystal growth and its application |
| TWI839916B (en) * | 2022-08-24 | 2024-04-21 | 大陸商西安奕斯偉材料科技股份有限公司 | A method for epitaxial growth and epitaxial wafer |
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