CN109904059A - The preparation method and applications of precious metal chemical complex - Google Patents
The preparation method and applications of precious metal chemical complex Download PDFInfo
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- CN109904059A CN109904059A CN201910040118.XA CN201910040118A CN109904059A CN 109904059 A CN109904059 A CN 109904059A CN 201910040118 A CN201910040118 A CN 201910040118A CN 109904059 A CN109904059 A CN 109904059A
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Abstract
This application involves materials science field more particularly to a kind of preparation method and applications of precious metal chemical complex.The preparation method of the precious metal chemical complex includes providing substrate, in the surface depositing noble metal film of the substrate, to form first intermediate product with flat surface.Selenylation reaction or telluride reaction are carried out on the surface of first intermediate product, to form precious metal chemical complex.The structural formula of the precious metal chemical complex is AB or AB2.Wherein A is one of gold, silver, platinum, ruthenium, rhodium, palladium, osmium or iridium or a variety of, and B is selenium element or tellurium element.The precious metal chemical complex of the method preparation can be detached from limitation when preparing precious metal chemical complex in the prior art for substrate material.That is, the method can prepare the precious metal chemical complex on arbitrary substrate material.In addition, the method can prepare large-sized precious metal chemical complex, the size of the precious metal chemical complex can satisfy the demand of industrial application.
Description
Technical field
This application involves materials science field more particularly to a kind of preparation method and applications of precious metal chemical complex.
Background technique
Stratiform transition-metal sulphides are due to its interesting physical property and potential photoelectricity, spintronics devices
Using the attention for having attracted numerous researchers.It had spread in recent years about the research of transition-metal sulphides except common
Semiconductive compound, such as MoS2、MoSe2Or WSe2, in addition to this further include the Ⅹth race's metal sulfide of metallicity such as
PtTe2Or PtSe2。PtTe2Or PtSe2With good electrology characteristic.
However, traditional preparation PtTe2Or PtSe2The method of film rests on laboratory stage, can not directly, batch
Amount prepares large-sized PtTe2Or PtSe2Film.To be pushed further into PtTe2、PtSe2The research of this kind of material and convenient for real
Border application, is badly in need of a kind of convenience and effective growing large-size PtTe2、PtSe2The method of film.
Summary of the invention
Based on this, it is necessary to for current problem, provide a kind of preparation method and applications of precious metal chemical complex.
A kind of preparation method of precious metal chemical complex, comprising the following steps:
S100 provides substrate, in the surface depositing noble metal film of the substrate, to form first with flat surface
Intermediate product, the noble metal are one of gold, silver, platinum, ruthenium, rhodium, palladium, osmium or iridium or a variety of；
S200 carries out selenylation reaction or telluride reaction on the surface of first intermediate product, to form noble metal
Object is closed, wherein using selenium in the selenylation reaction or adulterating the mixture of tellurium based on selenium, is used in the telluride reaction
Perhaps the structural formula of the mixture of the doped selenium precious metal chemical complex is AB or AB to tellurium based on tellurium2, wherein A be gold,
One of silver, platinum, ruthenium, rhodium, palladium, osmium or iridium are a variety of, and B is selenium element or tellurium element.
In one embodiment, the step S200 is specifically included:
S210, in the range of 360 DEG C -420 DEG C, gaseous environment is that the normal atmosphere of argon gas is depressed, in described first
Between product surface carry out selenylation reaction or telluride reaction, to form structural formula as the precious metal chemical complex of AB；
S220 carries out at annealing the precious metal chemical complex that structural formula is AB in the range of 430 DEG C -500 DEG C
Reason, to form structural formula as AB2The precious metal chemical complex.
In one embodiment, the noble metal film is deposited using ion sputtering method in the step S100；
It is anti-using surface progress selenizing of the equipment with accommodating chamber to first intermediate product in the step S200
It answers or telluride is reacted, reaction process is monitored by the window of the accommodating chamber during the reaction, to test data
It is characterized.
In one embodiment, the substrate is ceramic substrate, silicon substrate, glass substrate, metal substrate, polymer substrate
Or one of water-soluble substrate.
In one embodiment, the surface area of the precious metal chemical complex is -20 square centimeters of 10 square micron.
In one embodiment, the noble metal film with a thickness of 2 nanometers to 80 nanometers.
In one embodiment, in the step S100, in the range of 200 DEG C -500 DEG C, gaseous environment is argon gas
Normal atmosphere pressure uses ion sputtering method in the surface of substrate deposition to form the noble metal film, sputtering frequency
Rate is in 0.5J/cm2To 5J/cm2In the range of.
In one embodiment, the precious metal chemical complex is PtTe2、PtSe2、PdTe2、PdSe2Or PtTe is at least
It is a kind of.
A kind of application of precious metal chemical complex, uses structural formula for AB2Precious metal chemical complex, make field effect transistor
One of pipe, infrared photoelectric detector part, Two-dimensional electron device or topological electronics device, wherein A be gold, silver, platinum,
One of ruthenium, rhodium, palladium, osmium or iridium are a variety of, and B is selenium element or tellurium element.
A kind of application of precious metal chemical complex, uses structural formula for the precious metal chemical complex of AB, makes nanomorphic support type
Catalyst, wherein A is one of gold, silver, platinum, ruthenium, rhodium, palladium, osmium or iridium or a variety of, and B is tellurium element.
This application involves materials science field more particularly to a kind of preparation method and applications of precious metal chemical complex.Institute
The preparation method for stating precious metal chemical complex includes providing substrate, in the surface depositing noble metal film of the substrate, to form tool
There is the first intermediate product of flat surface, the noble metal is one of gold, silver, platinum, ruthenium, rhodium, palladium, osmium or iridium or a variety of.
Selenylation reaction or telluride reaction are carried out on the surface of first intermediate product, to form precious metal chemical complex, wherein described
Selenium is used in selenylation reaction or the mixture of tellurium is adulterated based on selenium.Tellurium is used in the telluride reaction or based on tellurium
The mixture of body doped selenium, the structural formula of the precious metal chemical complex are AB or AB2.Wherein A be gold, silver, platinum, ruthenium, rhodium,
One of palladium, osmium or iridium are a variety of, and B is selenium element or tellurium element.The precious metal chemical complex of the method preparation can
Limitation when preparing precious metal chemical complex in the prior art to be detached from for substrate material.That is, the method can be arbitrary
The precious metal chemical complex is prepared on substrate material.In addition, the method can prepare large-sized precious metal chemical complex,
The size of the precious metal chemical complex can satisfy the demand of industrial application.
Detailed description of the invention
Fig. 1 is the preparation method flow chart of the precious metal chemical complex provided in the application one embodiment；
Fig. 2 is the warm table that preparation process uses in the application one embodiment；
Fig. 3 is in the application one embodiment with PtTe and PtTe2For film grow flow diagram；
Fig. 4 is in the application one embodiment with PtTe2The side view and top view of lattice structure；
Fig. 5 is in the application one embodiment with the side view and top view of PtTe lattice structure；
Fig. 6 is PtTe in the application one embodiment2Raman Vibration Mode schematic diagram；
Fig. 7 is the Raman Vibration Mode schematic diagram of PtTe in the application one embodiment；
Fig. 8 is the Raman of the telluride platinum film obtained under different temperatures in alumina substrate in the application one embodiment
Spectrum；
Fig. 9 is the Raman of the telluride platinum film obtained under different temperatures on strontium titanates substrate in the application one embodiment
Spectrum；
Figure 10 is corresponding telluride platinum film Raman spectrum under tellurium source concentration different in the application one embodiment；
Figure 11 is the Raman of the selenizing platinum film obtained under different temperatures in alumina substrate in the application one embodiment
Spectrum；
Figure 12 is the PtTe grown on various substrates in the application one embodiment2The Raman spectrum of film；
Figure 13 is the PtSe grown on various substrates in the application one embodiment2The Raman spectrum of film；
Figure 14 is the PtTe grown in alumina substrate in the application one embodiment using the preparation method2It is thin
Film, PtSe2Film, PdTe2Film, PdSe2The Raman spectrum of film；
Figure 15 is the PtTe of the different-thickness grown using this method in alumina substrate in the application one embodiment2It is thin
Raman spectrum corresponding to film；
Figure 16 is the PtTe of the different-thickness grown using this method in alumina substrate in the application one embodiment2It is thin
The spatial distribution map at Characteristic Raman peak corresponding to film；
Figure 17 is the PtSe of the different-thickness grown using this method in alumina substrate in the application one embodiment2It is thin
Raman spectrum corresponding to film；
Figure 18 is the PtSe of the different-thickness grown using this method in alumina substrate in the application one embodiment2It is thin
The spatial distribution map at Characteristic Raman peak corresponding to film；
Figure 19 is the PtTe for the different-thickness being grown in the application one embodiment using this method in alumina substrate2
Film resistor variation with temperature relational graph；
Figure 20 is 5 nanometer thickness PtTe in the application one embodiment2The electron type Hall resistance of film；
Figure 21 is the different-thickness being grown in the application one embodiment using the preparation method in alumina substrate
PtTe2Film resistor variation with temperature relational graph；
Figure 22 is 5 nanometer thickness PtSe in the application one embodiment2The cavity type Hall resistance of film.
Specific embodiment
It is right with reference to the accompanying drawings and embodiments in order to which the objects, technical solutions and advantages of the application are more clearly understood
The preparation method and applications of precious metal chemical complex provided by the present application are further elaborated.It should be appreciated that this place
The specific embodiment of description only to explain the application, is not used to limit the application.
The method of traditional growth precious metal chemical complex includes: directly raw in Pt (111) the substrate surface selenizing of noble metal platinum
At PtSe2Film；PtSe is grown using hot auxiliary law2Film；PtSe is grown using molecular beam epitaxy2Film；Using chemical gas
Phase sedimentation grows PtSe2Film and PtTe2Film or from PtSe2PtSe is obtained using mechanical stripping method on body material2It is thin
It is transferred on substrate after layer.
The above method can not achieve the growth preparation of large scale precious metal chemical complex.The application provides a kind of noble metal
Close the preparation method and applications of object.It can the controllable noble metal of simple and effective growth thickness using method provided by the present application
Compound.The structural formula of the precious metal chemical complex is AB or AB2, wherein A is in gold, silver, platinum, ruthenium, rhodium, palladium, osmium or iridium
It is one or more, B be selenium element or tellurium element.Preparation PtSe is provided in following description2Film, PtTe2Film and
The specific embodiment of PtTe film.
The preparation method of the precious metal chemical complex provided by the present application can be widely applied to various substrates.Such as
The precious metal chemical complex can be grown on soluble NaCl substrate, the NaCl substrate be dissolved to obtain independently depositing
The precious metal chemical complex film.The preparation method mentioned in the application while it can extend to other precious metal materials
Selenide thin film, tellurides film growth in, such as growth PdSe2Film and PdTe2Film.Growing the noble metal
During closing object, the generating process with Raman characterization sample can be monitored in real time by transparent window.In preparation side
Method provides new approach to synthesize large-sized precious metal chemical complex film, to study the precious metal chemical complex film
Physical property provide new chance.
Referring to Fig. 1, providing a kind of preparation method of precious metal chemical complex in the application one embodiment, including following step
It is rapid:
S100 provides substrate, in the surface depositing noble metal film of the substrate, to form first with flat surface
Intermediate product, the noble metal are one of gold, silver, platinum, ruthenium, rhodium, palladium, osmium or iridium or a variety of.
In this step, first intermediate product refers to one layer of noble metal film of growth on any substrate.Your gold
The thickness for belonging to film is controllable.The noble metal film can be any one in gold, silver, platinum, ruthenium, rhodium, palladium, osmium or iridium.Institute
Stating noble metal film can be what two or more in gold, silver, platinum, ruthenium, rhodium, palladium, osmium or iridium was mixed with arbitrary proportion
Noble metal film.The preparation method of the noble metal film can be using pulsed laser deposition, magnetron sputtering method, outside molecular beam
Prolong method or chemical vapour deposition technique.In this step, it is subsequent that there is first intermediate product of flat surface to facilitate for formation
The precious metal chemical complex of good performance is generated in selenylation reaction or telluride reaction.
S200 carries out selenylation reaction or telluride reaction on the surface of first intermediate product, to form noble metal
Object is closed, wherein using selenium in the selenylation reaction or adulterating the mixture of tellurium based on selenium, is used in the telluride reaction
Perhaps the structural formula of the mixture of the doped selenium precious metal chemical complex is AB or AB to tellurium based on tellurium2, wherein A be gold,
One of silver, platinum, ruthenium, rhodium, palladium, osmium or iridium are a variety of, and B is selenium element or tellurium element.
In this step, the precious metal chemical complex for using this method to prepare can be PtSe2Film, PtTe2Film,
PdSe2Film, PdTe2Film and PtTe film.Its volatilization can be made using selenium source in the selenylation reaction or selenium is
The mixture of body-dopant tellurium prepares the precious metal chemical complex.Selenylation reaction is carried out on the surface of first intermediate product
Or PtSe may be generated after telluride reactionMTeNOr PdSeMTeN, wherein 0 < M <, 2,0 < N < 2, M+N=2.Separately
Outer, the noble metal can also be gold, silver, ruthenium, rhodium, osmium or iridium, the preparation method can also prepare generation such as AgTe,
IrSe2, RhTe or RhSe2Precious metal chemical complex.
In the present embodiment, the precious metal chemical complex of the method preparation can be detached from prepares noble metal in the prior art
For the limitation of substrate material when compound.That is, the method can prepare the noble metal on arbitrary substrate material
Close object.In addition, the method can prepare large-sized precious metal chemical complex, the size of the precious metal chemical complex can
Meets the needs of industrial application.
In one embodiment, the step S200 is specifically included:
S210, in the range of 360 DEG C -420 DEG C, gaseous environment is that the normal atmosphere of argon gas is depressed, in described first
Between product surface carry out selenylation reaction or telluride reaction, to form structural formula as the precious metal chemical complex of AB.
S220 carries out at annealing the precious metal chemical complex that structural formula is AB in the range of 430 DEG C -500 DEG C
Reason, to form structural formula as AB2The precious metal chemical complex.
In the present embodiment, the formation condition of the precious metal chemical complex of two kinds of different structure formulas is provided, it is main poor
The difference of the present heating temperature of complicated variant.Specifically which kind of range preparation structure formula be AB the precious metal chemical complex can root
It is selected according to specific experimental condition and test process.
In one embodiment, the noble metal film is deposited using ion sputtering method in the step S100；
It is anti-using surface progress selenizing of the equipment with accommodating chamber to first intermediate product in the step S200
It answers or telluride is reacted, reaction process is monitored by the window of the accommodating chamber during the reaction, to test data
It is characterized.
In the present embodiment, the preparation method can with the growth of precious metal chemical complex film described in situ real-time control, than
Optical microscope inspection growth course can such as be passed through.The preparation method can also be realized in growth course in situ, to institute
It states precious metal chemical complex film and carries out Raman Characterization.
In the present embodiment, noble metal selenide thin film or expensive can be prepared using linkam warm table on different substrates
Metal telluride film, and its growth of in-situ monitoring and characterization.Linkam warm table is independent.It is plated in ion sputtering instrument
After the film of complete noble metal, taking-up, which is put into warm table, to be grown.Then can during the growth process, in-situ characterization.
It does not need to be electrically connected between linkam warm table and optical microscopy and Raman spectrum tester.Optical microscopy and Raman light
Spectrum tester is all the optical signalling that sample is collected from the window on warm table top.
In one embodiment, the substrate is ceramic substrate, silicon substrate, glass substrate, metal substrate, polymer substrate
Or one of water-soluble substrate.
In the present embodiment, the substrate is unlimited, can be ceramic substrate, silicon substrate, glass substrate, metal substrate, polymerization
Object substrate.The substrate can be alumina substrate, chloric acid lanthanum substrate or strontium titanates substrate.The substrate can also be water-soluble
Property NaCl substrate.In the surface depositing noble metal film of NaCl substrate.After depositing noble metal film, among described first
Product dissolves NaCl substrate, the noble metal film of available stand alone type (freestanding) in water.In another reality
It applies in example, NaCl substrate is provided, in the surface depositing noble metal film of the substrate, to be formed in first with flat surface
Between product, the noble metal is one of gold, silver, platinum, ruthenium, rhodium, palladium, osmium or iridium or a variety of.In first intermediate product
Surface carry out selenylation reaction or telluride reaction, to form precious metal chemical complex.Carrying out selenylation reaction or telluride reaction
Afterwards, reaction product is put and dissolves NaCl substrate in water, directly formd on the surface of the ultra-thin noble metal film
Structural formula is AB or AB2The precious metal chemical complex.
In one embodiment, the surface area of the precious metal chemical complex is -20 square centimeters of 10 square micron.
In the present embodiment, uniform large-sized noble metal film can be obtained on substrate using ion sputtering instrument, then
Precious metal chemical complex can be formed after selenizing or telluride in thermal station.Preparation method preparation provided herein
The size of the precious metal chemical complex can arrive Centimeter Level, such as -20 square centimeters of 10 square microns.Traditional method, which uses, divides
Beamlet epitaxy or the chemical vapour deposition technique also larger precious metal chemical complex film of available size, but make
Standby complex process, high production cost.
In one embodiment, the noble metal film with a thickness of 2 nanometers to 80 nanometers.In the present embodiment, preparation
The thickness of the noble metal film may influence whether the subsequent surface parameter for preparing the precious metal chemical complex or comprehensive
Energy.The noble metal film with a thickness of in the range of 2 nanometers to 80 nanometers, it is ensured that the electricity of the precious metal chemical complex
Performance.Such as the thickness of the noble metal film can for 5 nanometers, 15 nanometers, 24 nanometers, 30 nanometers, 45 nanometers, 53 nanometers,
62 nanometers or 76 nanometers.
In one embodiment, in the step S100, in the range of 200 DEG C -500 DEG C, gaseous environment is argon gas
Normal atmosphere pressure uses ion sputtering method in the surface of substrate deposition to form the noble metal film, sputtering frequency
Rate is in 0.5J/cm2To 5J/cm2In the range of.In the present embodiment, the noble metal film is prepared using ion sputtering method, is had
Body can choose the higher precious metal simple substance of purity as sputtering source.The purity of precious metal simple substance as sputtering source can be selected
Take 95%-99.99%.
In one embodiment, the precious metal chemical complex is PtTe2、PtSe2、PdTe2、PdSe2Or PtTe is at least
It is a kind of.The preparation method of the application is used to be prepared for structural formula as PtTe2、PtSe2、PdTe2、PdSe2With your gold of PtTe
Belong to compound, detailed elaboration can be specifically provided in following description.
Please refer to Fig. 2 and Fig. 3, in the particular embodiment, a kind of noble metal selenium, tellurides film preparation method and its
Using, comprising the following steps:
(1) one layer is deposited on substrate using ion sputtering instrument (model of ion sputtering instrument can be KYKY SBC-12)
Noble metal (platinum or palladium may be selected) film, film thickness can be controlled by sedimentation time.The material of substrate is.The size of substrate
It can be 2 square centimeters -5 square centimeters.
(2) substrate for depositing noble metal (platinum or palladium) is placed on the warm table as shown in Figure 2 (type of the warm table
Number can be Linkam THCELL-600) in, and selenium block or tellurium block are placed as source far from the position of the warm table in substrate
(99.99%).Then load onto the warm table lid sealing with transparent window.
The temperature of the warm table setting is adjustable.The adjustable temperature range of the warm table can achieve -196 DEG C and arrive
600℃.The heating rate of the warm table can reach 0.1 DEG C/min to 150 DEG C/min.The precision of the warm table can reach entirely
0.1 DEG C of journey and stability can reach less than 0.01 DEG C.Key component thermal station in the warm table is by silver heat block, thermometric member
Part and airtight chamber's composition.Substrate can be placed on the coverslip of 0.17mm thickness, and coverslip is placed on press polished silver
On matter heating element.Silver heating element ensure that splendid heat transmitting and temperature measurement.Platinum resistance of the precision higher than 0.1 DEG C passes
Sensor provides very accurate and stable temperature signal.The chamber of the warm table be it is airtight, gas trap can control chamber
Indoor environment, i.e. inert gas or humidity.
(3) it is passed through argon stream from the air inlet of warm table, uses flowmeter (Beijing seven-star can be selected) coutroi velocity
For 100 standard milliliters/minute.
(4) control heating platen temperature reach make selenium or tellurium source volatilize and with air-flow reach on substrate with plate on substrate before
Platinum or palladium reaction, generate noble metal selen-tellurjum compound film.
(5) it can be monitored in real time from warm table upper window during the reaction and carry out Raman Characterization
(6) after reaction, turn off air-flow, after Temperature fall to room temperature, film is taken out.
According to the specific steps of above-mentioned preparation method, applicant has done a large amount of replication experiment, with reference to attached drawing below
Provide detailed description.
Fig. 3 is with PtTe and PtTe2For film grow flow diagram.Fig. 4 is PtTe2The side view of lattice structure
And top view, Fig. 5 are the side view and top view of PtTe lattice structure.Fig. 6 is PtTe2Raman Vibration Mode schematic diagram.Fig. 7
For the Raman Vibration Mode schematic diagram of PtTe.
Fig. 8 is the Raman spectrum of the telluride platinum film obtained under different temperatures in alumina substrate.Wherein grown at 400 DEG C
The available PtTe film of temperature, in 450 DEG C of available PtTe of growth temperature2Film.Fig. 9 is different on strontium titanates substrate
At a temperature of the obtained Raman spectrum of telluride platinum film.The curve obtained under 350 DEG C of growth temperature in Fig. 8 and Fig. 9 is as ginseng
It examines, does not obtain PtTe film or PtTe under 350 DEG C of growth temperature2Film.
Figure 10 is using corresponding telluride platinum film Raman spectrum under different tellurium source concentration.The knot of reference experiment process and Figure 10
Fruit is it follows that the high place of tellurium vapour concentration, that is, the place available PtTe close apart from tellurium source2, tellurium vapour concentration
Low place, that is, the place available PtTe remote apart from tellurium source.The right side of Raman spectrum is and left side Raman spectrum in Figure 10
Growth schematic diagram under the conditions of corresponding various concentration, lower layer's square represent substrate, upper layer correspond to different product PtTe or
PtTe2。
Figure 11 is the Raman spectrum of the selenizing platinum film obtained under different temperatures in alumina substrate.Exist as seen from Figure 11
Within the temperature range of 250 DEG C -450 DEG C, that different growth temperatures obtain is all PtSe2Film.
Figure 12 is the PtTe grown on different substrates2The Raman spectrum of film.Figure 13 is grown on different substrates
PtSe2The Raman spectrum of film.The preparation method that can be seen that the application by Figure 12 and Figure 13 is extensive for different substrates
Applicable.
Figure 14 is the PtTe grown in alumina substrate using the preparation method of the application2Film, PtSe2Film,
PdTe2Film, PdSe2It is thin to illustrate that the growing method can extend to the selenium of other noble metal, tellurides for the Raman spectrum of film
In film growth.
Figure 15 and Figure 16 is the PtTe of the different-thickness grown using the preparation method of the application in alumina substrate2Film
The spatial distribution map of corresponding Raman spectrum and Characteristic Raman peak.Figure 15 is the PtTe of different-thickness2The corresponding drawing of film
Graceful spectrum.Figure 16 is PtTe2The spatial distribution map at film Eg Characteristic Raman peak, shows PtTe2The surface of film is very uniform.
Figure 17 and Figure 18 is the PtSe of the different-thickness grown using the preparation method of the application in alumina substrate2Film
The spatial distribution map of corresponding Raman spectrum and Characteristic Raman peak.Figure 17 is the PtSe of different-thickness2The corresponding drawing of film
Graceful spectrum.Figure 18 is PtSe2The spatial distribution map at film Eg Characteristic Raman peak, shows PtSe2The surface of film is very uniform.
Figure 19 is the PtTe that the different-thickness in alumina substrate is grown in using the preparation method of the application2Film resistor
Variation with temperature relational graph shows thin layer PtTe2Film is metal.Figure 21 is to be grown in oxygen using the preparation method of the application
Change the PtTe of the different-thickness on aluminium substrate2Film resistor variation with temperature relational graph, shows thin layer PtSe2Film is partly to lead
Body.
Figure 20 is the PtTe for 5 nanometer thickness that the preparation method of the application is grown2The electron type Hall resistance of film.Figure 22 is
5 nanometer thickness PtSe of the preparation method growth of the application2The cavity type Hall resistance of film.Hall resistance is by seeing the oblique of it
Material is the carrier of electron type (n-type) or the carrier of cavity type (p-type) from the point of view of rate is positive and negative.Different carriers
The material of type can be applied on different devices.
A kind of application of precious metal chemical complex, uses structural formula for AB2Precious metal chemical complex, make field effect transistor
One of pipe, infrared photoelectric detector part, Two-dimensional electron device or topological electronics device, wherein A be gold, silver, platinum,
One of ruthenium, rhodium, palladium, osmium or iridium are a variety of, and B is selenium element or tellurium element.
It is claimed in the present embodiment, structural formula AB2The precious metal chemical complex as field effect transistor, infrared
The application of photoelectric detector, Two-dimensional electron device or topological electronics device.For example, single layer PtSe2Film has spiral
The spin structure of type.Single layer PtSe2The mobility of film is highest in transition-metal sulphides.Single layer PtSe2Film
Mobility can be comparable with the mobility of black phosphorus.PtSe2Film also has good semiconductor properties, for example has very high
Electron mobility and on-off ratio can be used for the production of semiconductor devices, such as field effect transistor.PtSe2Film also has
Wide gap tunable can expand near infrared region even mid infrared region, and there is bloom to ring infrared optics stimulation
Ying Xing can be used for infrared photoelectric detector part.PtSe2Film and PdSe2Film can show relatively good air-stable
Property, possibility is provided for practical application.By PdSe2Field effect transistor made of film shows tunable bipolar charge distribution current-carrying
Son conduction and high electronics field-effect mobility, show it is this there is anisotropy, the material of air-stable can be used for two-dimentional electricity
Sub- device.Other than above-mentioned characteristic, PtSe2Film can also be used in nanoelectronics, photocatalysis and gas sensitive device.And PtTe2With
PdTe2It is the second class topology dirac semimetal, in energy band there is inclined dirac to bore dispersion, it can be in topological electronics device
It is applied in part.
A kind of application of precious metal chemical complex, uses structural formula for the precious metal chemical complex of AB, makes nanomorphic support type
Catalyst, wherein A is one of gold, silver, platinum, ruthenium, rhodium, palladium, osmium or iridium or a variety of, and B is tellurium element.
It is claimed in the present embodiment, structural formula is the precious metal chemical complex of AB as nanomorphic loaded catalyst
Application.Specifically, Pt base ordered intermetallic compound has good Electrocatalytic Oxidation of Methanol activity, selectivity and stabilization
Property.Therefore, PtTe film has preferable Electrocatalytic Oxidation of Methanol Activity and stabill, can be used to make nanomorphic support type and urge
Agent.
The several embodiments of the application above described embodiment only expresses, with the description thereof is more specific and detailed, but
It cannot be understood as the limitations to patent of invention range.It should be pointed out that for those of ordinary skill in the art
For, without departing from the concept of this application, various modifications and improvements can be made, these belong to the guarantor of the application
Protect range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (10)
1. a kind of preparation method of precious metal chemical complex, which comprises the following steps:
S100 provides substrate, in the surface depositing noble metal film of the substrate, to be formed among first with flat surface
Product, the noble metal are one of gold, silver, platinum, ruthenium, rhodium, palladium, osmium or iridium or a variety of；
S200 carries out selenylation reaction or telluride reaction on the surface of first intermediate product, to form precious metal chemical complex,
Wherein used in the selenylation reaction selenium perhaps adulterated based on selenium in the mixture telluride reaction of tellurium using tellurium or
The mixture of doped selenium based on tellurium, the structural formula of the precious metal chemical complex are AB or AB2, wherein A be gold, silver, platinum,
One of ruthenium, rhodium, palladium, osmium or iridium are a variety of, and B is selenium element or tellurium element.
2. preparation method as described in claim 1, which is characterized in that the step S200 is specifically included:
S210, in the range of 360 DEG C -420 DEG C, gaseous environment is that the normal atmosphere of argon gas is depressed, and is produced among described first
The surface of object carries out selenylation reaction or telluride reaction, to form structural formula as the precious metal chemical complex of AB；
S220 makes annealing treatment the precious metal chemical complex that structural formula is AB in the range of 430 DEG C -500 DEG C, with
Formation structural formula is AB2The precious metal chemical complex.
3. preparation method as stated in claim 1 or 2, which is characterized in that use ion sputtering side in the step S100
Method deposits the noble metal film；
In the step S200 using the equipment with accommodating chamber to the surface of first intermediate product carry out selenylation reaction or
The reaction of person's telluride, is during the reaction monitored reaction process by the window of the accommodating chamber, carries out to test data
Characterization.
4. preparation method as claimed in claim 3, which is characterized in that the substrate is ceramic substrate, silicon substrate, glass lined
One of bottom, metal substrate, polymer substrate or water-soluble substrate.
5. preparation method as claimed in claim 4, which is characterized in that the surface area of the precious metal chemical complex is 10 squares micro-
- 20 square centimeters of rice.
6. preparation method as claimed in claim 4, which is characterized in that the noble metal film is received with a thickness of 2 nanometers to 80
Rice.
7. preparation method as claimed in claim 4, which is characterized in that in the step S100, in 200 DEG C -500 DEG C of range
Interior, gaseous environment is that the normal atmosphere of argon gas is depressed, and ion sputtering method is used to deposit on the surface of the substrate to be formed
Noble metal film is stated, sputters frequency in 0.5J/cm2To 5J/cm2In the range of.
8. preparation method as described in claim 1, which is characterized in that the precious metal chemical complex is PtTe2、PtSe2、
PdTe2、PdSe2Or at least one of PtTe.
9. a kind of application of precious metal chemical complex, which is characterized in that use structural formula for AB2Precious metal chemical complex, fabricating yard effect
Answer one of transistor, infrared photoelectric detector part, Two-dimensional electron device or topological electronics device, wherein A be gold,
One of silver, platinum, ruthenium, rhodium, palladium, osmium or iridium are a variety of, and B is selenium element or tellurium element.
10. a kind of application of precious metal chemical complex, which is characterized in that use structural formula for the precious metal chemical complex of AB, production is received
Rice state loaded catalyst, wherein A is one of gold, silver, platinum, ruthenium, rhodium, palladium, osmium or iridium or a variety of, and B is tellurium element.
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| CN111939946A (en) * | 2020-08-28 | 2020-11-17 | 台州学院 | RhSe2 three-dimensional electrocatalyst with four active surfaces |
| CN112310238A (en) * | 2020-10-27 | 2021-02-02 | 合肥工业大学 | Self-driven Schottky junction type ultra-wide band photoelectric detector based on two-dimensional platinum telluride nano film and silicon and preparation method thereof |
| CN113823703A (en) * | 2021-11-24 | 2021-12-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Room-temperature platinum telluride array terahertz detector and preparation method thereof |
| CN114672767A (en) * | 2022-04-14 | 2022-06-28 | 南京大学 | Chemical vapor deposition preparation method of large-size platinum ditelluride |
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