CN214505533U

CN214505533U - LED chip with good heat dissipation effect

Info

Publication number: CN214505533U
Application number: CN202120537787.0U
Authority: CN
Inventors: 张洪安; 陈慧秋; 武杰; 易翰翔; 李玉珠
Original assignee: Guangdong Deli Photoelectric Co ltd
Current assignee: Guangdong Deli Photoelectric Co ltd
Priority date: 2021-03-15
Filing date: 2021-03-15
Publication date: 2021-10-26
Anticipated expiration: 2031-03-15

Abstract

The utility model relates to a LED chip technical field discloses a LED chip that radiating effect is good, which comprises a substrate, the N type layer of setting on the substrate, the MQW layer of setting on one side of N type layer, the P type layer of setting on the MQW layer, the transparent conducting layer of setting on the P type layer, and set up the DBR structure on one side of transparent conducting layer, all be provided with first PAD layer on the opposite side of N type layer and on the opposite side of transparent conducting layer, be provided with second PAD layer on the first PAD layer, the DBR structure includes from the lower supreme DBR + Al that sets gradually₂O₃Layer, Al layer and Al₂O₃+ DBR layer. The utility model discloses a DBR structure passes throughFrom supreme DBR + Al that sets gradually down₂O₃Layer, Al layer and Al₂O₃The design of the DBR layer greatly improves the heat dissipation efficiency, has an excellent heat dissipation effect, effectively prevents the UVC chip from being overheated due to low efficiency and large heat, can be applied to high-reflectivity films, and is wide in application range.

Description

LED chip with good heat dissipation effect

Technical Field

The utility model relates to a LED chip technical field especially relates to a LED chip that the radiating effect is good.

Background

UVC flip-chip LED generally uses similar blue light flip-chip LED chip manufacturing technology, for improving luminous efficiency, can add the reflection stratum in flip-chip. However, the UVC flip-chip LED has a short wavelength, can form few films with good emission effect, generally only has DBR and metal Al, the DBR reflectivity of the conventional TiO2 is extremely low, and other metal oxide materials are required to be used; in addition, the DBR is slow in heat dissipation, so that the UVC chip is low in efficiency and large in heat, and overheating is easy to occur; however, since Al is hard to form ohmic contact with the P-type layer, it is difficult to apply a high-reflectivity film to a UVC flip chip.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the problem that a LED chip that the radiating effect is good is provided, and the radiating efficiency is high, and the radiating effect is good, more is favorable to using the high reflectivity film in UVC flip-chip LED chip, and application scope is wide.

In order to solve the technical problem, the utility model provides a LED chip that radiating effect is good, be in including substrate, setting N type layer on the substrate, setting are in MQW layer, setting on one side of N type layer are in P type layer, setting on the MQW layer are in transparent conducting layer and setting on the P type layer are in DBR structure on one side of transparent conducting layer, on the opposite side of N type layer with all be provided with first PAD layer on the opposite side of transparent conducting layer, be provided with second PAD layer on the first PAD layer, DBR structure includes from following supreme DBR + Al that sets gradually₂O₃Layer, Al layer and Al₂O₃+ DBR layer.

As the preferred scheme of the utility model, DBR + Al₂O₃The layer is in contact with a first PAD layer located on the transparent conductive layer.

As a preferred embodiment of the present invention, Al is₂O₃+ DBR layer located in the DBR + Al₂O₃A layer and the Al layer filled above the DBR + Al layer₂O₃And a layer and the Al layer.

As the preferred scheme of the utility model, the material of first PAD layer is Cr, Al, Ti, Pt, Au.

As the preferred scheme of the utility model, the material of second PAD layer is Cr, Al, Ti, Pt, Au, AuSn.

As a preferred embodiment of the present invention, Al is₂O₃+ Al in DBR layer₂O₃The thickness of (A) is 0.05 μm to 0.1. mu.m.

Implement the utility model discloses a LED chip that the radiating effect is good compares with prior art, has following beneficial effect:

the utility model discloses a LED chip passes through the design that the supreme DBR + Al2O3 layer, Al layer and Al2O3+ DBR layer of setting gradually down of DBR structure, has improved the radiating efficiency greatly, has good radiating effect, prevents effectively that UVC chip inefficiency heat is big and take place overheated, makes the LED chip more be favorable to using the high reflectivity film in UVC flip-chip LED chip, and application scope is wide.

Drawings

In order to more clearly illustrate the technical solution of the embodiments of the present invention, the drawings of the embodiments will be briefly described below.

Fig. 1 is a schematic structural diagram of an LED chip with a good heat dissipation effect.

In the figure: 1. substrate, 2, N-type layer, 3, MQW layer, 4, P-type layer, 5, transparent conductive layer, 6, DBR structure, 61, DBR + Al₂O₃Layer 62, Al layer 63,Al₂O₃+ DBR layer, 7, first PAD layer, 8, second PAD layer.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, are used herein to indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience of description and to simplify the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

Referring to fig. 1, a preferred embodiment of the present invention is an LED chip with good heat dissipation effect, including a substrate 1, an N-type layer 2 disposed on the substrate 1, an MQW layer 3 disposed on one side of the N-type layer 2, a P-type layer 4 disposed on the MQW layer 3, a transparent conductive layer 5 disposed on the P-type layer 4, and a DBR structure 6 disposed on one side of the transparent conductive layer 5, wherein a first PAD layer 7 is disposed on the other side of the N-type layer 2 and on the other side of the transparent conductive layer 5, a second PAD layer 8 is disposed on the first PAD layer 7, and the DBR structure 6 includes a DBR + Al2O3 layer 61, an Al layer 62, and an Al2O3+ DBR layer 63 which are sequentially disposed from bottom to top.

The utility model discloses a design that LED chip passed through DBR structure 6 from supreme DBR + Al2O3 layer 61, Al layer 62 and Al2O3+ DBR layer 63 of setting gradually down has improved the radiating efficiency greatly, has good radiating effect, prevents effectively that UVC chip inefficiency heat is big and take place overheated, makes the LED chip more be favorable to using the high reflectivity film in UVC flip-chip LED chip, and application scope is wide.

Illustratively, the DBR + Al2O3 layer 61 is in contact with the first PAD layer 7 on the transparent conductive layer 5, and the Al2O3+ DBR layer 63 is located above the DBR + Al2O3 layer 61 and the Al layer 62 and filled between the DBR + Al2O3 layer 61 and the Al layer 62.

Illustratively, the material of the first PAD layer 7 is Cr, Al, Ti, Pt, Au.

Illustratively, the material of the second PAD layer 8 is Cr, Al, Ti, Pt, Au, AuSn.

Illustratively, the Al2O3+ Al in the DBR layer 63₂O₃The thickness of (A) is 0.05 μm to 0.1. mu.m.

In the description of the present invention, it is to be understood that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are used in a generic sense, e.g., fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the scope of the invention, therefore, the invention is not limited thereto.

Claims

1. The LED chip with good heat dissipation effect is characterized by comprising a substrate and a heat dissipation layer arranged on the substrateLast N type layer, set up and be in MQW layer, setting on one side of N type layer are in P type layer, setting on the MQW layer are in transparent conducting layer and setting on the P type layer are in DBR structure on one side of transparent conducting layer, on the opposite side of N type layer with all be provided with first PAD layer on the opposite side of transparent conducting layer, be provided with second PAD layer on the first PAD layer, the DBR structure includes from supreme DBR + Al that sets gradually down₂O₃Layer, Al layer and Al₂O₃+ DBR layer.

2. The LED chip with good heat dissipation effect as claimed in claim 1, wherein the DBR + Al is₂O₃The layer is in contact with a first PAD layer located on the transparent conductive layer.

3. The LED chip with good heat dissipation effect as claimed in claim 1, wherein the Al is selected from the group consisting of Al, Cu, and Al₂O₃+ DBR layer located in the DBR + Al₂O₃A layer and the Al layer filled above the DBR + Al layer₂O₃And a layer and the Al layer.

4. The LED chip with good heat dissipation effect as defined in claim 1, wherein the first PAD layer is made of Cr, Al, Ti, Pt or Au.

5. The LED chip with good heat dissipation effect as defined in claim 1, wherein the second PAD layer is made of Cr, Al, Ti, Pt, Au, or AuSn.

6. The LED chip with good heat dissipation effect as claimed in claim 1, wherein the Al is selected from the group consisting of Al, Cu, and Al₂O₃+ Al in DBR layer₂O₃The thickness of (A) is 0.05 μm to 0.1. mu.m.

7. The LED chip with good heat dissipation effect as claimed in claim 1, wherein the Al is selected from the group consisting of Al, Cu, and Al₂O₃+ Al in DBR layer₂O₃Has a thickness of0.05μm－0.1μm。