CN214477403U - Heat radiator - Google Patents

Abstract

The utility model discloses a heat abstractor relates to semiconductor technology field. The heat dissipation device comprises a shell, a heat pipe and a turbulence column, wherein one side surface of the shell is used for bearing a semiconductor device, a heat dissipation cavity used for circulating a cooling medium is arranged in the shell, one end of the turbulence column is close to the heat dissipation cavity, the first side wall of the semiconductor device is connected, the other end of the semiconductor device faces the inside of the heat dissipation cavity, and the heat dissipation cavity is arranged between the semiconductor device and is internally provided with the heat pipe. The heat pipe guides heat into the heat dissipation cavity, the heat dissipation cavity is internally provided with the turbulence columns and the flowing cooling medium, and the flowing cooling medium is fully contacted with the turbulence columns to rapidly take out the heat in the heat dissipation cavity. The heat dissipation device adopts multiple heat dissipation means to be used together, heat generated by the semiconductor device can be quickly dissipated, the heat dissipation efficiency is high, the size of a heat dissipation structure of the semiconductor device is not increased, and the requirement of miniaturization of the device can be met.

Description

Heat radiator

Technical Field

The utility model relates to the field of semiconductor technology, particularly, relate to a heat abstractor.

Background

With the further development of technology, the advanced technical fields of semiconductor technology, information technology, etc. are developing towards high power, high integration and miniaturization, so that the amount of heat dissipated by the system is continuously increasing, and the limit of the heat dissipation system is continuously challenged by the high power density semiconductor devices inside the system.

In the prior art, a simple air-cooled or liquid-cooled heat dissipation system is generally adopted to cool a semiconductor device, the heat dissipation efficiency of the heat dissipation system is low, the liquid-cooled heat dissipation system generally has a plurality of component structures, contact interfaces can be arranged between different component structures, the contact interfaces have large thermal resistance, heat is easy to gather at the contact interfaces, and the heat dissipation is greatly influenced. With the continuous reduction of the size of the semiconductor device, the working temperature of the semiconductor device is increased in a linear trend along with the increase of power, so that the heat flux density of the semiconductor device is increased rapidly and the temperature distribution is uneven, further the semiconductor device is failed, and the high-efficiency, stable and safe operation and the service life of the semiconductor device are seriously influenced.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a heat abstractor to among the solution prior art, the lower technical problem of radiating efficiency of semiconductor device's cooling system.

The embodiment of the utility model is realized like this:

the embodiment of the utility model provides an aspect provides a heat abstractor, including casing, heat pipe and vortex post, a side surface of casing is used for bearing semiconductor device, is equipped with the heat dissipation cavity that is used for circulating coolant in the casing, and the one end of vortex post is close to semiconductor device with the heat dissipation cavity first lateral wall connection, the other end extends towards the heat dissipation cavity, is equipped with the heat pipe in the casing between heat dissipation cavity and the semiconductor device.

Optionally, the casing, the pipe wall of the heat pipe, and the spoiler column are of an integral structure.

Optionally, an inlet and an outlet are respectively disposed on two side walls of the heat dissipation cavity connected to the first side wall, and the cooling medium flows into the housing through the inlet and flows out of the housing through the outlet.

Optionally, the heat pipe is in a flat plate shape, and a plate surface of the heat pipe is horizontally arranged or parallel to a surface of the housing for bearing the semiconductor device.

Optionally, the end of the turbulence column connected to the first sidewall is equidistant from the plate surface of the heat pipe.

Optionally, the end of the heat pipe facing the semiconductor device is equidistant from a surface of the housing for supporting the semiconductor device.

Optionally, a wire mesh structure is arranged inside the heat pipe, and the wire mesh structure is used for enabling a heat exchange medium in the heat pipe to realize microcirculation inside the heat pipe, or a micro-groove structure is arranged inside the heat pipe and is used for enabling the heat exchange medium in the heat pipe to realize microcirculation inside the heat pipe.

Optionally, the surface of the housing for carrying the semiconductor device is arranged in a step along the heat dissipation cavity.

Optionally, the cross-section of the turbulence column is circular or elliptical.

Optionally, an opening is formed on a side of the heat dissipation cavity opposite to the first side wall, and the housing further includes a cover body for sealing and covering the opening.

The utility model discloses beneficial effect includes:

the embodiment of the utility model provides a heat abstractor includes casing, heat pipe and vortex post, and a side surface of casing is used for bearing semiconductor device, is equipped with the heat dissipation cavity that is used for circulating coolant in the casing, and the one end of vortex post extends towards the heat dissipation cavity with the first lateral wall connection that the heat dissipation cavity is close to semiconductor device, the other end, is equipped with the heat pipe in the casing between heat dissipation cavity and the semiconductor device. The heat absorption rate of heat pipe is the last thousand times of heat conduction metal, can siphon away the heat that semiconductor device produced in the work rapidly, and derive the heat through the heat dissipation cavity of below, the coolant that has vortex post and flow in the heat dissipation cavity, the coolant that flows can fully with heat dissipation cavity and its inside vortex post contact, the quick derivation of the heat in the cavity that will dispel the heat, the vortex post can make the coolant velocity of flow in the heat dissipation cavity slow down, make the dwell time of coolant in the heat dissipation cavity increase, and increased the contact area of coolant and heat dissipation cavity inside, the coolant of unit volume can be more take away the heat. The heat dissipation device adopts multiple heat dissipation means to be used together, heat generated by the semiconductor device can be quickly dissipated, the heat dissipation efficiency is high, the size of a heat dissipation structure of the semiconductor device is not increased, and the requirement of miniaturization of the device can be met.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

Fig. 1 is a schematic structural diagram of a heat dissipation device according to an embodiment of the present invention;

fig. 2 is a second schematic structural view of a heat dissipation device according to an embodiment of the present invention;

fig. 3 is a third schematic structural view of a heat dissipation device according to an embodiment of the present invention;

fig. 4 is a fourth schematic structural view of a heat dissipation device according to an embodiment of the present invention;

fig. 5 is a fifth schematic structural view of a heat dissipation device according to an embodiment of the present invention;

fig. 6 is a partially enlarged view of a portion a in fig. 4.

Icon: 100-a heat sink; 110-a housing; 111-a first surface; 112-a heat dissipation cavity; 1121 — a first side wall; 113-an inlet; 114-an outlet; 115-a cap; 120-a heat pipe; 121-wire mesh construction; 130-turbulence column.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the accompanying drawings, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

In the description of the present invention, it should be noted that the terms "center", "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. The terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Referring to fig. 1 and fig. 2, the present embodiment provides a heat dissipation apparatus 100, including a housing 110, a heat pipe 120 and a turbulence column 130, wherein a side surface of the housing 110 is used for carrying a semiconductor device, a heat dissipation cavity 112 for circulating a cooling medium is disposed in the housing 110, one end of the turbulence column 130 is connected to a first side wall 1121 of the heat dissipation cavity 112 close to the semiconductor device, and the other end extends into the heat dissipation cavity 112, and the heat pipe 120 is disposed in the housing 110 between the heat dissipation cavity 112 and the semiconductor device to be cooled.

The housing 110 has a first surface 111 and a second surface opposite to each other, the first surface 111 is used for carrying a semiconductor device to be heat dissipated, the housing 110 is made of a material capable of transferring heat, and after the semiconductor device is fixed on the housing 110, heat generated by the semiconductor device is transferred through the housing 110 and transferred from the surface of the housing 110 to the inside of the housing 110. A heat dissipation cavity 112 is disposed in the casing 110 near the second surface, and a heat pipe 120 is further disposed inside the casing 110 and between the semiconductor device and the heat dissipation cavity 112, and the heat conduction efficiency of the heat pipe 120 is much higher than that of a common heat dissipation metal (for example, the heat dissipation efficiency of the heat pipe 120 is 80-1000 times that of copper), so that heat generated by the semiconductor device can be quickly absorbed. The heat pipe 120 has an evaporation end and a condensation end, the evaporation end of the heat pipe 120 is disposed toward the semiconductor device for absorbing heat generated by the semiconductor device, and the heat absorbed by the evaporation end is transferred inside the heat pipe 120 to the condensation end of the heat pipe 120. The condensation end of the heat pipe 120 is disposed toward the first sidewall 1121 of the heat dissipation cavity 112, a plurality of turbulence columns 130 are disposed in the heat dissipation cavity 112, heat at the condensation end is transferred to the heat dissipation cavity 112 and the turbulence columns 130 via the housing 110, and a cooling medium flows in the heat dissipation cavity 112 and absorbs and guides the heat after passing through the turbulence columns 130.

The extending direction of the turbulence column 130 is perpendicular to the flowing direction of the cooling medium in the heat dissipation cavity 112, so that the flow velocity of the cooling medium can be reduced, the retention time of the cooling medium in the heat dissipation cavity 112 is prolonged, and meanwhile, the contact area between the cooling medium and the inside of the heat dissipation cavity 112 is further increased, so that the cooling medium in unit volume can take away more heat, and the heat dissipation effect is improved. In addition, one end of the turbulence column 130 is connected to the first sidewall 1121 of the heat dissipation cavity 112, and the other end of the turbulence column 130 can be abutted against a second sidewall opposite to the first sidewall 1121 in the heat dissipation cavity 112, at this time, the turbulence column 130 can also play a good role in supporting the heat pipe 120, the heat dissipation cavity 112 and the semiconductor device on the housing 110, so as to prevent the heat pipe 120 and the heat dissipation cavity 112 from deforming under the action of high temperature.

It should be understood that the shape of the case 110 is not limited as long as it has the first surface 111 and the second surface opposite to each other and is capable of disposing the heat pipe 120 and the heat dissipation cavity 112 inside thereof. The first surface 111 and the second surface may be disposed in parallel or may form a predetermined included angle, but a certain distance is formed between the first surface 111 and the second surface for disposing the heat pipe 120 and the spoiler column 130. The first surface 111 may be a single plane, or may be formed by interconnecting a plurality of sub-planes having different distances from the second surface. Illustratively, the housing 110 is rectangular, an upper surface of the rectangular housing 110 is processed into an inclined first surface 111, a horizontal lower surface is a second surface, a preset included angle is formed between the first surface 111 and the second surface, and the heat pipe 120 and the spoiler column 130 are sequentially disposed between the first surface 111 and the second surface.

The turbulence column 130 is also made of a material capable of transferring heat, and the heat of the semiconductor device is finally transferred from the housing 110 to the turbulence column 130 through the heat pipe 120. The number of the turbulence columns 130 may be one, two, or more, and the turbulence columns 130 are disposed in the heat dissipation cavity 112, so that on one hand, heat in the heat pipe 120 can be quickly led out, and on the other hand, the turbulence columns 130 can prolong a flow path and time of a cooling medium in the heat dissipation cavity 112, so as to better take away heat in the heat pipe 120 and the heat dissipation cavity 112, and further improve the heat dissipation effect of the heat dissipation apparatus 100. When the number of the turbulence columns 130 is multiple, the multiple turbulence columns 130 may be uniformly distributed in the heat dissipation cavity 112, so that the heat transfer is more uniform, the flowing time of the cooling medium at different positions of the heat dissipation cavity 112 is substantially consistent, and the uniformity of heat dissipation of the heat dissipation device 100 is improved.

The flowing cooling medium is located inside the casing 110 of the heat dissipation device 100, so that on one hand, the heat transferred from the heat pipe 120 to the heat dissipation cavity 112 can be quickly conducted out through the cooling medium, and on the other hand, the volume of the heat dissipation device 100 can be reduced, and no additional heat dissipation pipeline is needed for heat dissipation. The cooling medium may be a cooling liquid, a cooling gas, or the like.

In summary, the heat dissipation apparatus 100 includes a housing 110, a heat pipe 120, and a spoiler column 130, wherein a side surface of the housing 110 is used for carrying a semiconductor device, a heat dissipation cavity 112 for circulating a cooling medium is disposed in the housing 110, one end of the spoiler column 130 is connected to the first sidewall 1121 of the heat dissipation cavity 112 close to the semiconductor device, and the other end extends toward the heat dissipation cavity 112, and the heat pipe 120 is disposed in the housing 110 between the heat dissipation cavity 112 and the semiconductor device to be cooled. The heat absorption rate of the heat pipe 120 is thousands of times of that of heat-conducting metal, heat generated in the operation of a semiconductor device can be quickly absorbed, the heat is led out through the heat dissipation cavity 112 below, the heat dissipation cavity 112 is internally provided with the turbulence column 130 and flowing cooling medium, the flowing cooling medium can be fully contacted with the heat dissipation cavity 112 and the turbulence column 130 inside the heat dissipation cavity 112, the heat in the heat dissipation cavity 112 is quickly led out, the turbulence column 130 can slow down the flow rate of the cooling medium in the heat dissipation cavity 112, the retention time of the cooling medium in the heat dissipation cavity 112 is prolonged, the contact area between the cooling medium and the inside of the heat dissipation cavity 112 is increased, and the cooling medium in unit volume can take away more heat. The heat dissipation device 100 can quickly dissipate heat generated by the semiconductor device by adopting a plurality of heat dissipation means, has high heat dissipation efficiency, does not increase the volume of a heat dissipation structure of the semiconductor device, and can meet the requirement of miniaturization of the device.

Optionally, the housing 110, the wall of the heat pipe 120, and the turbulator 130 are an integral structure.

The heat pipe 120 is directly formed inside the housing 110, a pipe wall of the heat pipe 120 is the housing 110, and there is no interface between the heat pipe 120 and the housing 110, so that there is no thermal resistance between interfaces, and heat can be conducted faster without being hindered by the interface between the pipe wall of the heat pipe 120 and the housing 110. Similarly, the spoiler column 130 is also directly formed inside the housing 110, and is integrated with the housing 110, so that no interface exists between the housing 110, the heat pipe 120 and the spoiler column 130, and the heat can be transferred between the three without being blocked, and can be rapidly conducted to the spoiler column 130 and then taken away by the cooling medium, thereby improving the heat dissipation efficiency of the heat dissipation device 100.

Alternatively, the two sidewalls of the heat dissipation cavity 112 connected to the first sidewall 1121 are respectively provided with an inlet 113 and an outlet 114, and the cooling medium flows into the housing 110 through the inlet 113 and flows out of the housing 110 through the outlet 114.

The inlet 113 and the outlet 114 are used for flowing in and out of the cooling medium, so that the cooling medium in the heat dissipation cavity 112 is in a circulating state, and the heat absorbed by the cooling medium can be taken out of the heat dissipation cavity 112 in time. The inlet 113 and the outlet 114 are respectively disposed on two sidewalls connected to the first sidewall 1121 in the heat dissipation cavity 112, and the two sidewalls may be connected to each other or disposed opposite to each other. Preferably, the inlet 113 and the outlet 114 are respectively disposed on two opposite sidewalls along the direction in which the semiconductor device is sequentially disposed, so that the cooling medium can be ensured to flow in from one end of the heat dissipation cavity 112 and flow out from the other end of the heat dissipation cavity 112 after flowing through the whole heat dissipation cavity 112, and the flow path and the flow time of the cooling medium in the heat dissipation cavity 112 can be prolonged as much as possible by the arrangement of the turbulence column 130, so that the cooling medium absorbs more heat, and the heat dissipation effect of the heat dissipation apparatus 100 is effectively improved.

Referring to fig. 1 to fig. 5, optionally, the heat pipe 120 is a flat plate, and a plate surface of the heat pipe 120 is horizontally disposed or parallel to a surface of the housing 110 for carrying the semiconductor device.

Two opposite plate surfaces of the flat-plate heat pipe 120 face the first surface 111 and the heat dissipation cavity 112 of the housing 110, respectively, an upper plate surface of the heat pipe 120 is an evaporation end for absorbing heat transferred from the first surface 111, and a lower plate surface of the heat pipe 120 is a condensation end for transferring heat transferred from the upper plate surface to the first sidewall 1121 of the heat dissipation cavity 112, and further transferring the heat to the turbulence column 130. The flat heat pipe 120 is formed inside the casing 110, and has a better heat conduction effect compared with a metal layer with the same volume, and the volume of the heat dissipation device is not increased, so that the heat dissipation effect is effectively improved.

It is to be understood that the number of the flat plate-like heat pipes 120 may be one, two, or more. When the number of the flat-plate heat pipes 120 is one, in order to better transfer heat and achieve heat dissipation to all the semiconductor devices on the first surface 111 at the same time, the area of the plate surface of the heat pipe 120 should be greater than or equal to the projection area of the first surface 111 on the plate surface of the heat pipe 120. At this time, the evaporation end of the heat pipe 120 has a larger area and a better heat dissipation effect. When the number of the flat-plate-shaped heat pipes 120 is at least two, the at least two heat pipes 120 are sequentially arranged at intervals along the extending direction of the first surface 111 (i.e., the sequential arrangement direction of the semiconductor devices on the first surface 111). Also, in order to better transfer heat and achieve heat dissipation to all semiconductor devices on the first surface 111 at the same time, the extension length of the plate surfaces of at least two heat pipes 120 should be greater than or equal to the projection length of the first surface 111 in the extension direction of the heat pipes 120.

The plate surface of the heat pipe 120 may be disposed horizontally, or may be disposed parallel to the surface (i.e., the first surface 111) of the housing 110 for carrying the semiconductor device. When the plate surfaces of the heat pipes 120 are horizontally arranged, if the number of the heat pipes 120 is at least two, the plate surfaces of at least two heat pipes 120 are horizontally arranged and located on the same horizontal plane, or the plate surfaces of at least two heat pipes 120 are horizontally arranged and integrally distributed in an inclined manner. When the plate surface of the heat pipe 120 is parallel to the surface of the housing 110 for carrying the semiconductor devices, the distances between the evaporation end of the heat pipe 120 and the respective semiconductor devices on the first surface 111 are always kept consistent.

For example, referring to fig. 1, the number of the flat-plate heat pipes 120 is multiple, the upper plate surfaces and the lower plate surfaces of the flat-plate heat pipes 120 are both horizontally distributed and located on the same horizontal plane, and the flat-plate heat pipes 120 may be respectively disposed corresponding to the mounting positions of the semiconductor devices on the first surface 111, so as to improve the heat dissipation effect. Referring to fig. 2, the number of the flat heat pipes 120 is one, and the upper plate surface and the lower plate surface of one flat heat pipe 120 are both horizontally distributed. Referring to fig. 3, the number of the flat heat pipes 120 is one, and the upper plate surface and the lower plate surface of one flat heat pipe 120 are both parallel to the first surface 111, so that the distances between the evaporation end of the heat pipe 120 and each semiconductor device on the first surface 111 can be always kept consistent, and the heat dissipation effect is better. Referring to fig. 4, the number of the flat heat pipes 120 is plural, and the upper plate surface and the lower plate surface of the plurality of flat heat pipes 120 are both horizontally distributed but are integrally distributed in an inclined manner and are parallel to the first surface 111, so that a good heat dissipation effect can be achieved. Referring to fig. 5, the number of the flat-plate heat pipes 120 is multiple, and the upper plate surfaces and the lower plate surfaces of the flat-plate heat pipes 120 are both distributed horizontally, but the upper plate surfaces of the flat-plate heat pipes 120 are integrally distributed obliquely and parallel to the first surface 111, and the lower surfaces of the flat-plate heat pipes 120 are integrally distributed horizontally, that is, the thicknesses of the flat-plate heat pipes 120 along the oblique direction of the first surface 111 are gradually reduced, the arrangement makes the distances between the evaporation ends of the heat pipes 120 and the semiconductor devices consistent all the time, and the distances between the condensation ends and the turbulence columns 130 consistent all the time, thereby effectively improving the heat dissipation effect.

Optionally, the distance between the end of the turbulence column 130 connected to the first sidewall 1121 and the plate surface of the heat pipe 120 is equal.

The distances between the tops of the turbulence columns 130 (the ends connected to the first sidewalls 1121) and the heat pipes 120 are equal, which is beneficial to releasing heat in the heat pipes 120, so that the heat dissipation effect of the heat dissipation apparatus 100 is better. It should be understood that if the flat heat pipe 120 is horizontally disposed, the top ends of the plurality of turbulence columns 130 are located on the same horizontal plane, that is, the first side wall 1121 of the heat dissipation cavity 112 is also horizontally disposed, and the heights of the plurality of turbulence columns 130 are equal; if the flat heat pipe 120 is inclined, the top ends of the plurality of turbulence columns 130 are located on the same inclined plane, that is, the first side wall 1121 of the heat dissipation cavity 112 is also inclined, and the heights of the plurality of turbulence columns 130 decrease in sequence along the downward inclination direction of the flat heat pipe 120.

Alternatively, the end of the heat pipe 120 facing the semiconductor device is equidistant from the surface of the housing 110 for carrying the semiconductor device.

The distances between the evaporation end of the heat pipe 120 and each semiconductor device on the first surface 111 are always kept consistent, and the heat dissipation effect is better.

Referring to fig. 6, optionally, a wire mesh structure 121 is disposed inside the heat pipe 120, and the wire mesh structure 121 is used to enable a heat exchange medium inside the heat pipe 120 to realize micro-circulation inside the heat pipe 120, or a micro-groove structure is disposed inside the heat pipe 120 and is used to enable the heat exchange medium inside the heat pipe 120 to realize micro-circulation inside the heat pipe 120.

In this embodiment, the mesh structure 121 or the micro-groove structure is not limited as long as the heat exchange medium can realize micro-circulation inside the heat pipe 120. Illustratively, the wire mesh structures 121 or the micro-groove structures are disposed on the upper and lower sides of the pipe wall of the heat pipe 120, a coating layer having a hydrophobic effect is coated on the surface of the wire mesh structure 121 or the micro-groove structure on the upper side, and a coating layer having a hydrophilic effect is coated on the surface of the wire mesh structure 121 or the micro-groove structure on the lower side, so as to realize micro-circulation of vapor and liquid inside the heat pipe 120.

Referring to fig. 1 and fig. 2 again, optionally, the surface of the housing 110 for carrying the semiconductor device is arranged in a step along the heat dissipation cavity 112.

The first surface 111 is formed in a step shape by connecting a plurality of sub-step surfaces having different heights to each other, each of the sub-step surfaces carrying a semiconductor device. The first surface 111 is arranged in a step shape, so that a plurality of semiconductor devices arranged on the first surface 111 are located at different heights, heat diffusion is facilitated, meanwhile, if the semiconductor devices are light-emitting devices, mutual shielding among the semiconductor devices can be avoided, and light emitted by the light-emitting devices can be combined.

Optionally, the cross-section of the spoiler post 130 is circular or elliptical.

The turbulence columns 130 with the arc-shaped or circular side walls generate less resistance to the cooling medium and do not generate larger obstruction to the cooling medium.

Optionally, the housing 110 is made of a tungsten copper surface gold plated material.

The gold-plated material on the surface of the tungsten-copper has good heat conductivity and thermal expansion coefficient similar to that of the semiconductor device, so that the semiconductor device is not easy to crack when being welded on the bearing surface 111.

Optionally, an opening is formed on a side of the heat dissipation cavity 112 opposite to the first side wall 1121, and the housing 110 further includes a cover 115, where the cover 115 is used to seal and cover the opening.

The cover 115 and the housing 110 may be of an integral structure or a separate structure, as long as the cover 115 can seal the opening of the heat dissipation cavity 112 in the housing 110. If the cover 115 and the housing 110 are integrally formed, the cover 115 and the housing 110 are processed together. If the cover 115 and the housing 110 are separate structures, the cover 115 and the housing 110 are separately processed and then fixedly connected; the cover 115 and the housing 110 may be connected by bolts or welding, but the connection is not limited thereto.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. The utility model provides a heat abstractor, its characterized in that, includes casing, heat pipe and vortex post, a side surface of casing is used for bearing semiconductor device, be equipped with the heat dissipation cavity that is used for circulating coolant in the casing, the one end of vortex post with the heat dissipation cavity is close to semiconductor device's first lateral wall is connected, the other end orientation extend in the heat dissipation cavity, the heat dissipation cavity with between the semiconductor device be equipped with in the casing the heat pipe.

2. The heat dissipating device of claim 1, wherein the housing, the wall of the heat pipe, and the turbulence column are a unitary structure.

3. The heat dissipating device of claim 1, wherein the heat dissipating cavity has an inlet and an outlet on each of two side walls connected to the first side wall, and the cooling medium flows into the housing through the inlet and flows out of the housing through the outlet.

4. The heat dissipating device of claim 1, wherein the heat pipe is a flat plate, and a surface of the heat pipe is horizontally disposed or parallel to a surface of the housing for supporting the semiconductor device.

5. The heat dissipating device of claim 4, wherein the end of the turbulence column connected to the first sidewall is equidistant from the plate surface of the heat pipe.

6. The heat dissipating device of claim 1, wherein an end of the heat pipe facing the semiconductor device is equidistant from a surface of the housing on which the semiconductor device is carried.

7. The heat dissipation device of claim 1, wherein a wire mesh structure is disposed inside the heat pipe, and the wire mesh structure is used for micro-circulating the heat exchange medium inside the heat pipe, or a micro-groove structure is disposed inside the heat pipe, and the micro-groove structure is used for micro-circulating the heat exchange medium inside the heat pipe.

8. The heat dissipating device of any one of claims 1 to 7, wherein the surface of the housing for carrying the semiconductor device is stepped along the heat dissipating cavity.

9. The heat dissipating device of any of claims 1 to 7, wherein the cross-section of the turbulence column is circular or elliptical.

10. The heat dissipating device of any one of claims 1 to 7, wherein an opening is formed in the heat dissipating cavity on a side opposite to the first side wall, and the housing further comprises a cover for hermetically covering the opening.

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