CN214441346U - Ultrasonic cleaning equipment for cleaning cut crystal bar - Google Patents

Abstract

The utility model provides ultrasonic cleaning equipment for cleaning cut crystal bars, which comprises a first ultrasonic cleaning tank, a second ultrasonic cleaning tank and a pure water cleaning tank which are adjacent in sequence; the first ultrasonic cleaning tank comprises a first tank body, a first ultrasonic vibration plate and a first ultrasonic generator; the second ultrasonic cleaning tank comprises a second tank body, a second ultrasonic vibration plate and a second ultrasonic generator, wherein the first tank body and the second tank body are both provided with a support frame, and the first tank body and the second tank body are both provided with a water inlet and a water outlet; the pure water cleaning tank comprises a third tank body, and a water inlet is formed in the third tank body; in the cleaning operation process, the crystal bar is completely immersed by pure water in different tanks and is sequentially cleaned by the ultrasonic cleaning of the first ultrasonic cleaning tank and the second ultrasonic cleaning tank and the overflow cleaning of the pure water cleaning tank. Adopt the utility model discloses an ultrasonic cleaning equipment can need not to use chemicals such as surfactant active, can effectively reduce the cleaning cost and reduce the pollution to the environment.

Description

Ultrasonic cleaning equipment for cleaning cut crystal bar

Technical Field

The utility model relates to a wafer preparation technical field especially relates to an ultrasonic cleaning equipment for rinsing crystal bar (slotted ingot) after the cutting.

Background

Wafers are an important raw material for forming semiconductor devices, which are formed on the surface of the wafer. As device integration is increasing, device feature sizes are shrinking, and thus, the impact of contaminants on wafer surfaces on yield and/or device performance and reliability is increasing. Meanwhile, as the integration degree of the device is increased, the processing morphology of structures such as grooves in the device is complicated, so that the removal of pollutants is difficult. Surface contaminants introduced during wafer processing and device fabrication can be largely classified into particle contamination, inorganic contamination, organic contamination, and microbial contamination, while surface contaminants can be largely classified into particle adhesion or adsorption, and a thin film generated on the wafer surface due to reaction.

Therefore, if such contaminants can be completely and effectively removed during wafer fabrication, including ingot slicing and surface processing, and cleaning processes, high integration of devices can be facilitated. In a wafer processing process, from the viewpoint of contaminants, if the contaminants generated in a wire cutting process for cutting a wafer from a grown ingot cannot be completely removed, large and deep defects may be generated, and the contaminants may be difficult to completely remove in subsequent processes of rough grinding, finish grinding, polishing and cleaning, thereby easily causing fatal defects of devices.

The wire cutting method adopted during the crystal bar cutting is a crystal bar cutting method which is characterized in that a coolant is added into silicon carbide powder to prepare a liquid grinding liquid which is sprayed onto a cutting wire, and grinding particles in the grinding liquid induce friction between the crystal bar and the cutting wire, so that the cutting effect is generated. The wafers immediately after dicing are not yet delaminated, and they are still adhered to each other and still in a smectic rod (i.e., a sliced ingot composed of a plurality of wafers), and impurities such as silicon particles, organic oil, abrasive particles, graphite powder, and resin remain on the wafer surfaces. These impurities can be undesirable for subsequent processing and must be removed by cleaning.

The existing method for cleaning the cut crystal bar adopts pure water and surfactant to clean in a cleaning device, so that the wafers are separated from each other while the pollutants on the surfaces of the wafers are removed. However, the existing cleaning method is difficult to effectively remove various pollutants (such as silicon particles, organic oil, abrasive particles, graphite powder, resin, and the like) adsorbed on the surface of the wafer, so that the removal amount of the surface of the wafer in the subsequent process is increased, and the specific gravity of chemicals needs to be increased during the RCA cleaning, thereby causing problems of increased production cost, environmental pollution, and the like.

SUMMERY OF THE UTILITY MODEL

In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide an ultrasonic cleaning apparatus for cleaning a sliced boule, which is used to solve the problems in the prior art that the cleaning method for the sliced boule employs pure water and surfactant, which is difficult to effectively remove various contaminants (such as silicon particles, organic oil, abrasive particles, graphite powder, resin, etc.) adsorbed on the surface of a wafer, so that the amount of removal of the surface of the wafer in the subsequent process is increased, and the specific gravity of chemicals needs to be increased during RCA cleaning, thereby increasing the production cost and bringing about environmental pollution.

In order to achieve the above objects and other related objects, the present invention provides an ultrasonic cleaning apparatus for cleaning a cut ingot, including a first ultrasonic cleaning tank, a second ultrasonic cleaning tank and a pure water cleaning tank which are adjacent in sequence; the first ultrasonic cleaning tank comprises a first tank body, a first ultrasonic vibration plate and a first ultrasonic generator, wherein the first ultrasonic generator is used for driving the first ultrasonic vibration plate; the second ultrasonic cleaning tank comprises a second tank body, a second ultrasonic vibration plate and a second ultrasonic generator for driving the second ultrasonic vibration plate, the second ultrasonic vibration plate is positioned in the second tank body, the first tank body and the second tank body are both provided with a support frame, and the first tank body and the second tank body are both provided with a water inlet and a water outlet; the pure water cleaning tank comprises a third tank body, and a water inlet is formed in the third tank body; in the cleaning operation process, the crystal bar is completely immersed by pure water in different tanks and is sequentially subjected to ultrasonic cleaning by the first ultrasonic cleaning tank and the second ultrasonic cleaning tank and overflow cleaning by the pure water cleaning tank.

Optionally, heaters are disposed on both the first ultrasonic cleaning tank and the second ultrasonic cleaning tank to heat the pure water in the tank body.

Optionally, the first ultrasonic cleaning tank and the second ultrasonic cleaning tank are both provided with a temperature control device, and the temperature control devices are connected with the heater.

Optionally, the first ultrasonic vibration plate and the second ultrasonic vibration plate are both multiple, extend along the length direction of the corresponding groove body, and are symmetrically distributed on two opposite sides of the corresponding groove body by taking the crystal bar as the center.

Optionally, the lower parts of the first tank body and the second tank body are both in a trapezoidal funnel structure, and the water outlet is located at the bottom of the corresponding tank body.

Optionally, the ultrasonic cleaning apparatus further includes an inert gas supply device, which is communicated with the first tank, the second tank, and the third tank, so as to introduce inert gas into each tank.

Optionally, the ultrasonic cleaning apparatus further comprises a recovery device, and the recovery device is connected with the third tank body to recycle pure water overflowing from the third tank body.

Optionally, the first groove body and the second groove body are both provided with a sealing cover.

Optionally, the ultrasonic cleaning apparatus further includes a loading stack, the loading stack is disposed adjacent to the first ultrasonic cleaning tank, and the cut crystal bar is loaded to the first ultrasonic cleaning tank through the loading stack.

As above, the utility model discloses an ultrasonic cleaning equipment for rinsing crystal bar after the cutting has following beneficial effect: the utility model discloses through the structural design who improves, crystal bar (slotted inget) after the multi-thread cutting is earlier through many times ultrasonic cleaning, utilize the ultrasonic wave because nonlinear action can produce the cavitation when propagating in the liquid, the shock wave that sends when cavitation bubble closes suddenly can produce thousands of atmospheric pressure around the wafer in order to directly strike repeatedly the wafer surface, destroy pollutant and the absorption on wafer surface and reach the cleaning performance from this, later through ultrapure water overflow cleaning again, in order to improve the cleaning quality. Adopt the utility model discloses an ultrasonic cleaning equipment can need not to use chemicals such as surfactant active, not only can effectively reduce the cleaning cost, can reduce the pollution to the environment simultaneously.

Drawings

Fig. 1 is a schematic view showing the connection relationship between the ingot and the workpiece plate (a schematic view along the radial direction of the ingot), and fig. 2 is a schematic view showing the multi-wire cut ingot still connected to the workpiece plate through the resin plate (a schematic view along the length direction of the ingot).

Fig. 3 shows a schematic structural diagram of the ultrasonic cleaning apparatus provided by the present invention.

Fig. 4 is a schematic view showing a cross-sectional structure of the first tank along the vertical length direction of the ingot.

Description of the element reference numerals

11 first ultrasonic cleaning tank

111 first trough body

112 first ultrasonic vibration plate

113 support frame

12 second ultrasonic cleaning tank

121 second trough body

122 second ultrasonic vibration plate

123 support

13 pure water cleaning tank

131 third groove body

14 isolation layer

15 load Stack

21 workpiece plate

22 resin plate

23 crystal bar

231 wafer

Detailed Description

The following description is provided for illustrative purposes, and other advantages and features of the present invention will become apparent to those skilled in the art from the following detailed description.

Please refer to fig. 1 to 4. It should be understood that the structure, ratio, size and the like shown in the drawings attached to the present specification are only used for matching with the content disclosed in the specification, so as to be known and read by those skilled in the art, and are not used for limiting the limit conditions that the present invention can be implemented, so that the present invention has no technical essential meaning, and any structure modification, ratio relationship change or size adjustment should still fall within the scope covered by the technical content disclosed in the present invention without affecting the function and the achievable purpose of the present invention. Meanwhile, the terms such as "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for convenience of description, and are not intended to limit the scope of the present invention, and changes or adjustments of the relative relationship thereof may be made without substantial technical changes.

Wafers are one of the most basic and important raw materials in the semiconductor chip manufacturing process, and the manufacturing process generally includes a crystal pulling step of pulling a polycrystalline silicon material into a high-quality ingot by Czochralski (Czochralski) pulling, a barrel-grinding step of dividing the ingot into a plurality of stages while grinding the outer diameter of the ingot and machining notch grooves, a slicing step of dividing the ingot into silicon wafers, and a step of improving the flatness of the surface of the silicon wafers by grinding. The conventional process of cutting the crystal bar 23 into wafers generally includes adhering the crystal bar 23 to the resin plate 22, fixing the resin plate 22 to the workpiece plate 21, and then cutting the crystal bar 23 by wire cutting. After the wire cutting, the wafers 231 are still adhered to each other, so that the whole wafer 231 still assumes the state of the crystal bar 23 (i.e. the sliced soot formed by the wafers 231), as shown in fig. 1 and fig. 2, after the wire cutting, the crystal bar 23 and the workpiece plate 21 are required to be moved to a cleaning device for cleaning, so as to remove the adhesive from the wafers 231 one by one and clean the surfaces of the wafers 231 at the same time. However, in the prior art, pure water, a surfactant and the like are mostly adopted for cleaning, and it is difficult to effectively remove various contaminants (such as silicon particles, organic oil, abrasive particles, graphite powder, resin and the like) adsorbed on the surface of the wafer, so that the removal amount of the surface of the wafer in the subsequent process is increased, and the specific gravity of chemicals needs to be increased during RCA cleaning, thereby causing problems of increased production cost, environmental pollution and the like. The present application thus proposes an improvement countermeasure.

Specifically, as shown in fig. 3, the utility model provides an ultrasonic cleaning device for cleaning a cut crystal bar, which comprises a first ultrasonic cleaning tank 11, a second ultrasonic cleaning tank 12 and a pure water cleaning tank 13 which are adjacent in sequence; the first ultrasonic cleaning tank 11 comprises a first tank body 111, a first ultrasonic vibration plate 112 positioned in the first tank body 111, and a first ultrasonic generator for driving the first ultrasonic vibration plate 112; the second ultrasonic cleaning tank 12 includes a second tank body 121, a second ultrasonic vibration plate 122 and a second ultrasonic generator for driving the second ultrasonic vibration plate 122, the second ultrasonic vibration plate 122 is located in the second tank body 121, the first tank body 111 and the second tank body 121 are both provided with support frames (113 and 123) for supporting and placing a crystal bar 23 fixed by a bearing frame (for example, as shown in fig. 1, a plurality of cut wafers 231 are still fixed on the workpiece plate 21 by a resin plate 22, so that the workpiece plate 21 can be erected on the support frames, the crystal bar 23 is immersed in pure water downwards), and the first tank body 111 and the second tank body 121 are both provided with water inlets and water outlets, pure water is supplied into the corresponding tank bodies through the water inlets, and the pure water is usually ultrapure water, and the cleaned liquid containing particle impurities is discharged through the water outlets; the pure water cleaning tank 13 comprises a third tank body 131, and a water inlet is arranged on the third tank body 131 so as to supply pure water, which is usually ultrapure water, into the third tank body 131; in the cleaning operation, the cut crystal bar 23 is completely immersed in pure water in different tanks, and is sequentially subjected to the ultrasonic cleaning by the first ultrasonic cleaning tank 11 and the second ultrasonic cleaning tank 12 and the overflow cleaning by the pure water cleaning tank 13.

Contaminants are typically firmly attached to the wafer surface by strong forces such as Capillary forces (Capillary Action), van der waals forces (van der waals's London attachment), Electrical Double-Layer forces (electric Double-Layer Force), and electrostatic adsorption forces (electrostatic adsorption Force). The capillary attraction and van der waals force account for more than 83% of the total adsorption force, and ultrasonic cleaning is to utilize ultrasonic waves to strongly permeate into pollutants with geometrical shapes attached to the surface of a cleaned piece with a complex surface form and various structures so as to destroy the bonding force between the pollutants and the wafer and between the pollutants, so that the pollutants fall off from the surface of the wafer and flow out of a tank body along with the discharge of pure water. The utility model discloses through the structural design who improves, crystal bar (slotted inget) after the multi-thread cutting is earlier through many times ultrasonic cleaning, utilize the ultrasonic wave because nonlinear action can produce the cavitation when propagating in the liquid, the shock wave that sends when cavitation bubble closes suddenly can produce thousands of atmospheric pressure around the wafer in order to directly strike repeatedly the wafer surface, destroy pollutant and the absorption on wafer surface and reach the cleaning performance from this, later through ultrapure water overflow cleaning again, in order to improve the cleaning quality. Adopt the utility model discloses an ultrasonic cleaning equipment can need not to use chemicals such as surfactant active, not only can effectively reduce the cleaning cost, can reduce the pollution to the environment simultaneously.

By way of example, the upper portions of the first tank 111, the second tank 121 and the third tank 131 are preferably rectangular (i.e. have rectangular openings) to facilitate the placement of the crystal ingot 23, the crystal ingot 23 needs to be completely immersed in pure water in each tank, and the volume of the crystal ingot 23 is preferably not more than 20% of the volume of each tank. The material of each tank is preferably transparent, such as ptfe (polytetrafluoroethylene), and a sealing cover (not shown) may be disposed on the first tank 111 and the second tank 121. The ultrasonic cleaning equipment can be provided with a shell to contain the tank bodies so as to improve the cleanliness of the inside of the equipment, the shell is preferably a transparent shell (also can be made of PTEE material) so as to be convenient for observation, and isolation layers 14 can be arranged between the tank bodies so as to avoid mutual interference. In one example, the ultrasonic cleaning apparatus further includes an inert gas supply device, which is in communication with the first tank 111, the second tank 121, and the third tank 131, so as to introduce an inert gas, such as nitrogen, into each tank, so that the corresponding cleaning tank operates under an inert gas atmosphere, thereby preventing the crystal bar 23 from contacting with the outside atmosphere to cause surface oxidation contamination (especially before the crystal bar 23 is put into the tank and after the crystal bar 23 is taken out of the tank). Of course, in other examples, the ultrasonic cleaning apparatus may also include a vacuum pump connected to each tank body, so that each tank body works under a vacuum condition, which is not strictly limited in this embodiment.

As an example, heaters are disposed on the first ultrasonic cleaning tank 11 and the second ultrasonic cleaning tank 12, and are used for heating pure water in the tanks, so as to facilitate softening and dropping of pollutants, and simultaneously facilitate enhancing cavitation of ultrasonic waves to improve cleaning effect. The heater includes but is not limited to a resistance heater, and can be directly placed in pure water or placed on the lower surface of the corresponding tank body. Preferably, the working temperature in the first tank 111 and the second tank 121 is preferably 50-70 ℃, so to ensure that the ultrasonic cleaning tank works under the optimal temperature condition, in a further example, the first ultrasonic cleaning tank 11 and the second ultrasonic cleaning tank 12 are both provided with temperature control devices, and the temperature control devices are connected with a heater to control the temperature within a required range.

In order to ensure that the ultrasonic waves can be uniformly applied to each surface of the ingot, the first ultrasonic vibration plate 112 and the second ultrasonic vibration plate 122 are, for example, a plurality of plates, each of which extends along the length direction of the corresponding tank and is symmetrically distributed around the ingot 23 on opposite sides of the corresponding tank. For example, as shown in fig. 3, 2 ultrasonic vibration plates are disposed in each tank, and the length of each ultrasonic vibration plate is preferably not less than the length of the ingot 23, the 2 ultrasonic vibration plates are symmetrically distributed on two sides of the ingot 23 and can be attached to the inner sides of the tank walls of the corresponding tank, and the ultrasonic generator is usually disposed outside the tank and even outside the apparatus.

As an example, the lower portions of the first tank 111 and the second tank 121 are each in a trapezoidal funnel structure, that is, the lower opening is smaller than the upper opening so that the cross section perpendicular to the length direction of the ingot 23 is in a trapezoidal structure, and the drain port is located at the bottom of the corresponding tank, as shown in fig. 3 (fig. 3 illustrates the cross-sectional structure of the first tank 111, and the second tank 121 and the third tank 131 may have the same structure). And the length of the water outlet can be the same or substantially the same as the length of the crystal bar 23, which helps the contaminants in the liquid to be discharged along the inclined surface at the bottom, and prevents the particle impurities from being re-attached to the surface of the wafer 231 due to agitation.

Since the third tank 131 works in the overflow state, theoretically, the third tank 131 is only provided with a water inlet. In one example, the bottom of the third tank 131 is provided with a drain opening, the bottom of the third tank 131 can be similarly provided with a trapezoidal funnel structure similar to that of fig. 4, and the drain opening can be also provided at the bottom of the tank to facilitate discharging of particulate impurities in the liquid.

In an example, the ultrasonic cleaning apparatus further includes a recycling device (not shown) connected to the third tank 131 to recycle pure water overflowing from the third tank 131. The recovery device may include a recovery tank and a filter, the recovery tank may be disposed at the periphery of the third tank 131, the filter is disposed in the recovery tank, and pure water filtered by the filter may be re-delivered into the third tank 131, or may be delivered into the first tank 111 and/or the second tank 121 (considering that the third tank 131 is finally cleaned, the requirement for purity of pure water is higher, and therefore, the recovered pure water is preferably delivered into the first tank 111 and/or the second tank 121).

The ultrasonic cleaning frequency of the two ultrasonic cleaning tanks can be the same or different, and is not limited in this embodiment, depending on the process. The ultrasonic cleaning is to remove particles by using energy generated by cavitation, and the force generated after the micro-pores formed in the fluid are broken by ultrasonic waves with the frequency of 20-100 KHZ impacts pollutants, so that the pollutants fall off from the surface of the wafer. The smaller the particle impurities on the wafer surface, the higher the ultrasonic frequency is, the better the cleaning effect can be achieved, and especially when the particle impurities below 0.5 μm are to be removed, the ultrasonic wave (or even megasonic wave) of 100KHZ to 200MHZ is preferably used. If the contamination on the surface of the ingot 23 (wafer) after dicing is 5 μm or more, a lower frequency ultrasonic wave is used.

As an example, the ultrasonic cleaning apparatus further includes a loading stack 15, the loading stack 15 is disposed adjacent to the first ultrasonic cleaning bath 11, and the cut ingot 23 is loaded to the first ultrasonic cleaning bath 11 through the loading stack 15. The loading stack 15 may also be disposed in the housing of the apparatus to isolate the ingot 23 to be cleaned from the external environment, thereby preventing the oxidation of the surface of the ingot 23 caused by the oxygen in the air. An air filtration device (not shown), such as an FFU fan filter bank, may be disposed within the load stack 15. Further, a moving device (not shown) such as a crown block provided at the top of the loading stack 15 may be provided in the loading stack 15 to move the structure shown in fig. 1 to the first ultrasonic cleaning bath 11 by the moving device.

The parameters of the cleaning time in different cleaning tanks, the ultrasonic frequency of the first ultrasonic cleaning and the ultrasonic frequency of the second ultrasonic cleaning and the like can be set according to the cleaning requirements, no specific limitation is made in the embodiment, and different tank bodies can be used for cleaning different crystal bars simultaneously. If after the first ultrasonic cleaning tank is used for cleaning, the glue on the surface of the crystal bar drops more seriously, a receiving frame (not shown) is required to be arranged at the bottom of the crystal bar, a plurality of clamping grooves can be uniformly arranged on the receiving frame at intervals, the degummed wafers are embedded into the corresponding clamping grooves in a one-to-one correspondence manner, and then the wafers are moved to the next cleaning tank by the receiving frame.

In summary, the utility model provides an ultrasonic cleaning device for cleaning cut crystal bars, which comprises a first ultrasonic cleaning tank, a second ultrasonic cleaning tank and a pure water cleaning tank which are adjacent in sequence; the first ultrasonic cleaning tank comprises a first tank body, a first ultrasonic vibration plate and a first ultrasonic generator, wherein the first ultrasonic generator is used for driving the first ultrasonic vibration plate; the second ultrasonic cleaning tank comprises a second tank body, a second ultrasonic vibration plate and a second ultrasonic generator for driving the second ultrasonic vibration plate, the second ultrasonic vibration plate is positioned in the second tank body, the first tank body and the second tank body are both provided with a support frame, and the first tank body and the second tank body are both provided with a water inlet and a water outlet; the pure water cleaning tank comprises a third tank body, and a water inlet is formed in the third tank body; in the cleaning operation process, the cut crystal bars are completely immersed by pure water in different tanks and are sequentially subjected to ultrasonic cleaning by the first ultrasonic cleaning tank and the second ultrasonic cleaning tank and overflow cleaning by the pure water cleaning tank. The utility model discloses through the structural design who improves, crystal bar (slotted inget) after the multi-thread cutting is earlier through many times ultrasonic cleaning, utilize the ultrasonic wave because nonlinear action can produce the cavitation when propagating in the liquid, the shock wave that sends when cavitation bubble closes suddenly can produce thousands of atmospheric pressure around the wafer in order to directly strike repeatedly the wafer surface, destroy pollutant and the absorption on wafer surface and reach the cleaning performance from this, later through ultrapure water overflow cleaning again, in order to improve the cleaning quality. Adopt the utility model discloses an ultrasonic cleaning equipment can need not to use chemicals such as surfactant active, not only can effectively reduce the cleaning cost, can reduce the pollution to the environment simultaneously. Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.

The above embodiments are merely illustrative of the principles and effects of the present invention, and are not to be construed as limiting the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (9)

1. An ultrasonic cleaning device for cleaning a cut crystal bar is characterized by comprising a first ultrasonic cleaning tank, a second ultrasonic cleaning tank and a pure water cleaning tank which are adjacent in sequence; the first ultrasonic cleaning tank comprises a first tank body, a first ultrasonic vibration plate and a first ultrasonic generator, wherein the first ultrasonic generator is used for driving the first ultrasonic vibration plate; the second ultrasonic cleaning tank comprises a second tank body, a second ultrasonic vibration plate and a second ultrasonic generator for driving the second ultrasonic vibration plate, the second ultrasonic vibration plate is positioned in the second tank body, the first tank body and the second tank body are both provided with a support frame, and the first tank body and the second tank body are both provided with a water inlet and a water outlet; the pure water cleaning tank comprises a third tank body, and a water inlet is formed in the third tank body; in the cleaning operation process, the cut crystal bars are completely immersed by pure water in different tanks and are sequentially subjected to ultrasonic cleaning by the first ultrasonic cleaning tank and the second ultrasonic cleaning tank and overflow cleaning by the pure water cleaning tank.

2. The ultrasonic cleaning apparatus according to claim 1, wherein heaters are provided on both the first ultrasonic cleaning tank and the second ultrasonic cleaning tank to heat pure water in the tanks.

3. The ultrasonic cleaning apparatus according to claim 2, wherein the first ultrasonic cleaning tank and the second ultrasonic cleaning tank are each provided with a temperature control device, and the temperature control device is connected to the heater.

4. The ultrasonic cleaning device according to claim 1, wherein the first ultrasonic vibration plate and the second ultrasonic vibration plate are a plurality of plates, and each of the plates extends along a length direction of the corresponding tank body and is symmetrically distributed on two opposite sides of the corresponding tank body with the crystal bar as a center.

5. The ultrasonic cleaning equipment as claimed in claim 1, wherein the lower parts of the first tank body and the second tank body are both in a trapezoidal funnel structure, and the water outlet is positioned at the bottom of the corresponding tank body.

6. The ultrasonic cleaning device of claim 1, further comprising an inert gas supply device in communication with the first tank, the second tank, and the third tank to introduce inert gas into each tank.

7. The ultrasonic cleaning apparatus according to claim 1, further comprising a recovery device connected to the third tank for recovering pure water overflowing from the third tank.

8. The ultrasonic cleaning device of claim 1, wherein the first tank and the second tank are provided with sealing covers.

9. The ultrasonic cleaning apparatus according to any one of claims 1 to 8, further comprising a loading stack disposed adjacent to the first ultrasonic cleaning tank, through which the cut ingot is loaded to the first ultrasonic cleaning tank.

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