CN214437715U - Vapor deposition furnace tail gas recovery device and vapor deposition furnace system - Google Patents
Vapor deposition furnace tail gas recovery device and vapor deposition furnace system Download PDFInfo
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- CN214437715U CN214437715U CN202023289168.9U CN202023289168U CN214437715U CN 214437715 U CN214437715 U CN 214437715U CN 202023289168 U CN202023289168 U CN 202023289168U CN 214437715 U CN214437715 U CN 214437715U
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Abstract
The utility model provides a recovery unit and vapour deposition stove system of vapour deposition stove tail gas, vapour deposition stove tail gas include hydrogen selenide and argon gas mist, and recovery unit includes buffer tank, compressor, condenser, adsorber, clarifier and gas holder. The first air inlet of buffer tank is used for receiving hydrogen selenide and argon gas mist that come from the vapour deposition stove, the first gas outlet of buffer tank links to each other with the first import of compressor, the first export of compressor links to each other with the second air inlet of condenser, the second gas outlet of condenser links to each other with the second import of adsorber, the second export of adsorber links to each other with the third air inlet of clarifier, the third gas outlet of clarifier links to each other with the fourth air inlet of gas holder, thereby realize retrieving hydrogen selenide and argon gas effective separation respectively, can improve the recovery efficiency and the recycle ratio of argon gas and hydrogen selenide. The vapor deposition furnace system comprises a hydrogen selenide-argon mixer, a vapor deposition furnace and a vapor deposition furnace tail gas recovery device.
Description
Technical Field
The disclosure relates to the field of gas recovery, in particular to a recovery device for tail gas of a vapor deposition furnace and a vapor deposition furnace system.
Background
Hydrogen selenide is an important electron gas and is typically used in admixture with argon gas. Most of the hydrogen selenide is consumed after the mixed gas of the hydrogen selenide and the argon gas passes through the vapor deposition furnace, and the argon gas does not participate in the reaction. The mixed gas of argon and unreacted hydrogen selenide is discharged from the vapor deposition furnace, and the recovery of the mixed gas of argon and hydrogen selenide is generally low in utilization rate and efficiency.
SUMMERY OF THE UTILITY MODEL
In view of the defects in the prior art, the present disclosure is directed to provide a recovery device for a vapor deposition furnace tail gas and a vapor deposition furnace system, which can improve the recovery efficiency and the recovery utilization rate of argon and hydrogen selenide.
In order to achieve the above objects, in one aspect, the present disclosure provides a recovery apparatus of a vapor deposition furnace tail gas, the vapor deposition furnace tail gas including a hydrogen selenide and argon gas mixed gas, the recovery apparatus including a buffer tank, a compressor, a condenser, an adsorber, a purifier, and a gas storage tank. The first air inlet of buffer tank is used for receiving hydrogen selenide and argon gas mixture from the vapor deposition furnace, the first gas outlet of buffer tank with the first import of compressor links to each other, the first export of compressor with the second air inlet of condenser links to each other, the second gas outlet of condenser with the second import of adsorber links to each other, the second export of adsorber with the third air inlet of clarifier links to each other, the third gas outlet of clarifier with the fourth air inlet of gas holder links to each other.
In one embodiment, the condenser is provided with a liquid recovery port, and the liquid recovery port is arranged at the bottom of the condenser.
In one embodiment, the top of the gas storage tank is provided with a gas recovery port.
In an embodiment, the first inlet and the first outlet of the compressor are located at the top of the condenser.
In one embodiment, the second inlet of the adsorber is located at the top of the adsorber and the second outlet of the adsorber is located at the bottom of the adsorber.
In one embodiment, the third gas inlet of the purifier is located at the top of the purifier, and the third gas outlet of the purifier is located at the bottom of the purifier.
In order to achieve the above objects, in another aspect, the present disclosure provides a vapor deposition furnace system including a hydrogen selenide-argon mixer, a vapor deposition furnace, and the aforementioned recovery apparatus of the vapor deposition furnace off-gas. The gas storage tank of the recovery device is provided with a gas recovery port, the gas recovery port is connected with the gas inlet end of the hydrogen selenide-argon mixer, and the gas outlet end of the hydrogen selenide-argon mixer, the vapor deposition furnace and the first gas inlet of the buffer tank of the recovery device are sequentially connected.
The beneficial effects of this disclosure are as follows:
in the recovery unit according to this disclosure vapour deposition stove tail gas, hydrogen selenide and argon gas mist pass through buffer tank steady pressure, get into the condenser after rethread compressor pressurization, hydrogen selenide and argon gas mist and low temperature refrigerant effect in the condenser, the hydrogen selenide condensation is hydrogen selenide liquid, the bottom of condenser is collected to the hydrogen selenide liquid, argon gas still exists with the gas form, and argon gas adsorbs the purification through the adsorber, the argon gas through adsorbing the purification gets into the clarifier purification, finally by the gas holder collection, thereby realize retrieving hydrogen selenide and argon gas respectively with the effective separation of argon gas, the hydrogen selenide and the argon gas quality of retrieving are higher, and recovery unit is simple to be convenient for operate and control, consequently, can improve the recovery efficiency and the recycle ratio of argon gas and hydrogen selenide.
In the vapor deposition furnace system according to this disclosure, through recovery unit with hydrogen selenide and argon gas mist separation recovery, the argon gas that the separation obtained can return to the inlet end of hydrogen selenide-argon gas blender, directly uses as the feed gas of vapor deposition furnace to improve recovery efficiency and recycle rate.
Drawings
Fig. 1 is a schematic view of a vapor deposition furnace tail gas recovery apparatus according to the present disclosure.
FIG. 2 is a schematic view of a vapor deposition furnace system according to the present disclosure.
Wherein the reference numerals are as follows:
100 recovery device 4 adsorber
1 second inlet of buffer tank 41
11 first air inlet 42 second outlet
12 first outlet 5 purifier
2 third air inlet of compressor 51
21 first inlet 52 third air outlet
22 first outlet 6 gas storage tank
3 fourth air intake of condenser 61
31 second gas inlet 62 gas recovery port
32 second outlet 200 hydrogen selenide-argon mixer
33 vapor deposition furnace with liquid recovery port 300
Detailed Description
The accompanying drawings illustrate embodiments of the present disclosure and it is to be understood that the disclosed embodiments are merely examples of the disclosure, which can be embodied in various forms, and therefore, specific details disclosed herein are not to be interpreted as limiting, but merely as a basis for the claims and as a representative basis for teaching one skilled in the art to variously employ the present disclosure.
To make the objects, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to the drawings in the embodiments of the present disclosure, and it is obvious that the described embodiments are some, but not all embodiments of the present disclosure.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs; the terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure; the terms "including" and "having," and any variations thereof, in the description and claims of this disclosure and the description of the above figures are intended to cover non-exclusive inclusions. In the description of the present disclosure, unless otherwise explicitly specified or limited, the terms "first," "second," "third," and the like in the description and claims of the present disclosure or in the above-described drawings are used for distinguishing between different objects, and not for describing a particular sequential or primary-secondary relationship, nor are they to be construed as indicating or implying relative importance. The terms "connected" and "coupled" are used broadly and include, for example, "connected" and "coupled" as well as both fixed and removable or integral or electrical or signal connections; "connected" may be directly connected or indirectly connected through an intermediate. The specific meaning of the above terms in the present disclosure can be understood by those of ordinary skill in the art as appropriate.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the disclosure. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
The term "and/or" herein is merely an association describing an associated object, meaning that three relationships may exist, e.g., a and/or B, may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
The presence of "a plurality" in this disclosure means more than two (including two).
The following describes in detail a recovery apparatus of a vapor deposition furnace off-gas and a vapor deposition furnace system according to the present disclosure with reference to the accompanying drawings.
Referring to fig. 1 and 2, a recovery apparatus of a vapor deposition furnace offgas according to the present disclosure includes a hydrogen selenide and argon mixed gas. The recovery apparatus 100 includes a buffer tank 1, a compressor 2, a condenser 3, an adsorber 4, a purifier 5, and a gas tank 6. The first gas inlet 11 of the buffer tank 1 is used for receiving the hydrogen selenide and argon gas mixed gas from the vapor deposition furnace 300, the first gas outlet 12 of the buffer tank 1 is connected with the first inlet 21 of the compressor 2, the first outlet 22 of the compressor 2 is connected with the second gas inlet 31 of the condenser 3, the second gas outlet 32 of the condenser 3 is connected with the second inlet 41 of the adsorber 4, the second outlet 42 of the adsorber 4 is connected with the third gas inlet 51 of the purifier 5, and the third gas outlet 52 of the purifier 5 is connected with the fourth gas inlet 61 of the gas storage tank 6.
In the recovery unit according to this disclosure vapour deposition stove tail gas, hydrogen selenide and argon gas mist pass through 1 surge tank, get into condenser 3 after 2 pressurizations through the compressor again, hydrogen selenide and argon gas mist and low temperature refrigerant effect in condenser 3, the hydrogen selenide condensation is hydrogen selenide liquid, the bottom of condenser 3 is collected to the hydrogen selenide liquid, argon gas still exists with the gas form, and argon gas is through 4 absorption purifications of adsorber, the argon gas through absorption purifications gets into 5 purifiers, finally by gas holder 6 collections, thereby realize retrieving hydrogen selenide and argon gas effective separation respectively, the hydrogen selenide and the argon gas quality of retrieving are higher, and recovery unit is simple to be convenient for operate and control, consequently, can improve the recovery efficiency and the recycle ratio of argon gas and hydrogen selenide.
Referring to the example shown in fig. 1 and 2, the buffer tank 1, the compressor 2, the condenser 3, the adsorber 4, the purifier 5, and the gas holder 6 may be sequentially connected by pipes.
Referring to fig. 1 and 2, in some embodiments, in order to recover the hydrogen selenide and argon gas mixture, the hydrogen selenide and argon gas mixture needs to be pressurized, so that the buffer tank 1 and the compressor 2 are used, the pressure is stabilized by the buffer tank 1, the pressure of the hydrogen selenide and argon gas mixture is stabilized at 0-1 atm, and then the pressure is pressurized to 3-5 atm by the compressor 2.
Referring to fig. 1 and 2, in some embodiments, the first inlet 21 and the first outlet 22 of the compressor 2 are located at the top of the compressor 2.
Referring to fig. 1 and 2, in order to realize effective separation of hydrogen selenide and argon gas mixed gas, the hydrogen selenide and argon gas mixed gas and a low-temperature refrigerant exchange heat through a condenser 3, so that separation of the hydrogen selenide and the argon gas is realized, and the method is quick and convenient, and thereby the recovery efficiency is improved. Wherein the temperature in the condenser 3 can be set to-40 to-80 ℃, and the pressure in the condenser can be 3 to 5 atmospheric pressures. As shown in fig. 1 and 2, in some embodiments, the condenser 3 is provided with a liquid recovery port 33, and the liquid recovery port 33 is provided at the bottom of the condenser 3. The hydrogen selenide and argon gas mixed gas acts with a low-temperature refrigerant through the condenser 3, wherein the hydrogen selenide is condensed into liquid, the argon gas cannot be condensed, and the argon gas continuously exists in a gas form, so that the separation of the hydrogen selenide and argon gas mixed gas is realized, the hydrogen selenide liquid obtained by separation can be discharged through the liquid recovery port 33 to be collected, and the collected hydrogen selenide liquid can be used as a raw material of a vapor deposition furnace. For example, hydrogen selenide liquid can be filled into a gas cylinder to be used as raw material gas of a vapor deposition furnace, so that the hydrogen selenide liquid is recycled, and the recycling rate can be improved.
Referring to fig. 1 and 2, a mixed gas of hydrogen selenide and argon gas is obtained by separating hydrogen selenide and argon gas through a condenser 3, purifying the argon gas through an absorber 4, purifying the argon gas through a purifier 5 to improve the quality of the argon gas, and finally collecting the argon gas with higher quality through a gas storage tank 6.
Referring to fig. 1 and 2, in some embodiments, the second inlet 41 of the adsorber 4 is located at the top of the adsorber 4 and the second outlet 42 of the adsorber 4 is located at the bottom of the adsorber 4.
Referring to fig. 1 and 2, in some embodiments, third gas inlet 51 of purifier 5 is located at the top of purifier 5 and third gas outlet 52 of purifier 5 is located at the bottom of purifier 5.
As shown in fig. 1 and fig. 2, in some embodiments, a gas recovery port 62 is disposed at the top of the gas holder 6, and the purified argon is discharged and collected through the gas recovery port 62 of the gas holder 6, and can be used as a raw material gas of the vapor deposition furnace to achieve recycling, so that the recycling rate can be improved.
Referring to fig. 1 and 2, a vapor deposition furnace system according to the present disclosure includes a hydrogen selenide-argon mixer 200, a vapor deposition furnace 300, and a recovery apparatus 100 of a vapor deposition furnace off-gas according to the present disclosure. The gas recovery port 62 provided in the gas storage tank 6 of the recovery apparatus 100 may be connected to the gas inlet 200a of the hydrogen selenide-argon mixer 200, and the gas outlet 200b of the hydrogen selenide-argon mixer 200, the vapor deposition furnace 300, and the first gas inlet 11 of the buffer tank 1 of the recovery apparatus 100 are sequentially connected. Wherein, the gas outlet end 200b of the hydrogen selenide-argon mixer 200, the vapor deposition furnace 300 and the first gas inlet 11 of the buffer tank 1 of the recovery device 100 can be connected in sequence through pipelines; the gas recovery port 62 of the gas container 6 of the recovery apparatus 100 may be connected to the gas inlet end 200a of the hydrogen selenide-argon gas mixer 200 through a pipe.
In the vapor deposition furnace system according to the present disclosure, the hydrogen selenide and argon gas mixture is separated and recovered by the recovery device 100, and the separated argon gas may be returned to the gas inlet end 200a of the hydrogen selenide-argon gas mixer 200 and directly used as a raw material gas of the vapor deposition furnace, thereby improving the recovery efficiency and the recovery utilization rate.
Generally, a vapor deposition furnace uses 8 tons of hydrogen selenide and 100 tons of argon gas every year, hydrogen selenide is discharged to a spray tower 1 ton every year, and the argon gas is discharged to the atmosphere after being washed by the spray tower. In an embodiment of the vapor deposition furnace system according to the present disclosure, the recovery device 100 for the vapor deposition furnace tail gas according to the present disclosure is used, the vapor deposition furnace tail gas enters the condenser 3 after passing through the buffer tank 1 and the compressor 2, the condenser 3 uses a nitrogen expander for refrigeration, hydrogen selenide is condensed and collected and then is recycled by filling the gas cylinder, uncondensed argon gas enters the adsorber 4 for adsorption and impurity removal, the adsorbed argon gas enters the purifier 5 for deep purification for purification, and the argon gas purified by the adsorber 4 and the purifier 5 enters the gas storage tank 6 for storage. The gas recovery port 62 of the gas holder 6 is connected to the gas inlet 200a of the hydrogen selenide-argon gas mixer 200 through a pipe, so that the argon gas in the gas holder 6 enters the hydrogen selenide-argon gas mixer 200 as the raw material gas of the vapor deposition furnace 300, and is mixed with fresh argon gas and hydrogen selenide through the hydrogen selenide-argon gas mixer 200, thereby completing the argon gas recycling. Through the recovery device 100 for the tail gas of the vapor deposition furnace and the vapor deposition furnace system, the annual argon gas usage of the vapor deposition furnace 300 is reduced to be within 10 tons, the argon gas cost is greatly saved, the hydrogen selenide recovery amount reaches 500 plus materials per year, and meanwhile, the usage amount of a washing agent required by the operation of a hydrogen selenide spray tower and the wastewater generation amount are reduced, so that the recovery utilization rate is improved, the cost is saved, the recovery device 100 for the tail gas of the vapor deposition furnace and the vapor deposition furnace system are simple and easy to control in structure, and the hydrogen selenide and the argon gas can be effectively separated and recovered, so that the recovery efficiency is improved. In addition, use this disclosed recovery unit 100 and gaseous phase deposition stove system of vapour phase deposition stove tail gas can retrieve more than 80% with the hydrogen selenide that will discharge originally in the spray column, and the argon gas is retrieved more than 90% to reduce the emission of harmful waste gas, also reduced the production volume of handling the danger useless that the hydrogen selenide caused, thereby reduce the harm that causes biology, environment and human body and realize the effective recycle of resource.
The above detailed description describes exemplary embodiments, but is not intended to limit the combinations explicitly disclosed herein. Thus, unless otherwise specified, various features disclosed herein can be combined together to form a number of additional combinations that are not shown for the sake of brevity.
The above description is only a preferred embodiment of the present disclosure and is not intended to limit the present disclosure, and various modifications and changes may be made to the present disclosure by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.
Claims (7)
1. A recovery device for tail gas of a vapor deposition furnace comprises hydrogen selenide and argon mixed gas and is characterized in that the recovery device (100) comprises a buffer tank (1), a compressor (2), a condenser (3), an adsorber (4), a purifier (5) and a gas storage tank (6);
the first gas inlet (11) of buffer tank (1) is used for receiving hydrogen selenide and argon gas mixture from vapor deposition furnace (300), the first gas outlet (12) of buffer tank (1) with the first import (21) of compressor (2) link to each other, the first export (22) of compressor (2) with the second gas inlet (31) of condenser (3) link to each other, the second gas outlet (32) of condenser (3) with the second import (41) of adsorber (4) link to each other, the second export (42) of adsorber (4) with the third gas inlet (51) of clarifier (5) link to each other, the third gas outlet (52) of clarifier (5) with the fourth gas inlet (61) of gas holder (6) link to each other.
2. The recycling apparatus of the tail gas of the vapor deposition furnace according to the claim 1, characterized in that the condenser (3) is provided with a liquid recycling port (33), and the liquid recycling port (33) is provided at the bottom of the condenser (3).
3. The recycling apparatus of the tail gas of the vapor deposition furnace according to claim 1, wherein the gas storage tank (6) is provided with a gas recycling port (62) at the top.
4. The apparatus for recycling of off-gas of a vapor deposition furnace according to claim 1, characterized in that the first inlet (21) and the first outlet (22) of the compressor (2) are located at the top of the compressor (2).
5. The apparatus for recycling the off-gas of a vapor deposition furnace according to claim 1, wherein the second inlet (41) of the adsorber (4) is located at the top of the adsorber (4) and the second outlet (42) of the adsorber (4) is located at the bottom of the adsorber (4).
6. The recycling apparatus of the off-gas of the vapor deposition furnace according to claim 1, wherein the third gas inlet (51) of the purifier (5) is located at the top of the purifier (5), and the third gas outlet (52) of the purifier (5) is located at the bottom of the purifier (5).
7. A vapor deposition furnace system, characterized in that it comprises a hydrogen selenide-argon mixer (200), a vapor deposition furnace (300) and a vapor deposition furnace off-gas recovery device (100) according to any of claims 1-6;
gas holder (6) of recovery unit (100) are provided with gas recovery mouth (62), gas recovery mouth (62) with inlet end (200a) of hydrogen selenide-argon gas blender (200) are connected, just end (200b) of giving vent to anger of hydrogen selenide-argon gas blender (200) vapor deposition stove (300) and first air inlet (11) of buffer tank (1) of recovery unit (100) connect gradually.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023289168.9U CN214437715U (en) | 2020-12-30 | 2020-12-30 | Vapor deposition furnace tail gas recovery device and vapor deposition furnace system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023289168.9U CN214437715U (en) | 2020-12-30 | 2020-12-30 | Vapor deposition furnace tail gas recovery device and vapor deposition furnace system |
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| CN214437715U true CN214437715U (en) | 2021-10-22 |
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| CN202023289168.9U Active CN214437715U (en) | 2020-12-30 | 2020-12-30 | Vapor deposition furnace tail gas recovery device and vapor deposition furnace system |
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Effective date of registration: 20211214 Address after: 511517 workshop a, No.16, Chuangxing Third Road, high tech Zone, Qingyuan City, Guangdong Province Patentee after: Guangdong lead Microelectronics Technology Co.,Ltd. Address before: 511517 Qingyuan 27-9 high tech Industrial Park, Guangdong Patentee before: FIRST RARE MATERIALS Co.,Ltd. |
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