CN214418505U - Silicon chip thinning and purifying workpiece - Google Patents
Silicon chip thinning and purifying workpiece Download PDFInfo
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- CN214418505U CN214418505U CN202120023038.6U CN202120023038U CN214418505U CN 214418505 U CN214418505 U CN 214418505U CN 202120023038 U CN202120023038 U CN 202120023038U CN 214418505 U CN214418505 U CN 214418505U
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- silicon wafer
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- table top
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 67
- 239000010703 silicon Substances 0.000 title claims abstract description 67
- 238000001179 sorption measurement Methods 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000000746 purification Methods 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000008187 granular material Substances 0.000 abstract description 8
- 230000003749 cleanliness Effects 0.000 abstract description 5
- 235000013312 flour Nutrition 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 239000002245 particle Substances 0.000 description 17
- 239000012535 impurity Substances 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 239000011863 silicon-based powder Substances 0.000 description 7
- 238000005299 abrasion Methods 0.000 description 3
- 239000003463 adsorbent Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 241000251468 Actinopterygii Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The utility model provides a silicon wafer thinning and purifying workpiece, which is used for purifying one side surface of a placing table surface close to a silicon wafer to be ground and comprises a substrate and an adsorption layer arranged on one side of the substrate; the side surface of the substrate is connected with the adsorption layer, and the structure of the substrate is matched with that of the adsorption layer; the side of the adsorption layer, which is far away from the substrate, is a plane, the area of the adsorption layer is not smaller than that of the silicon wafer to be ground, and the side of the adsorption layer, which is far away from the substrate, has viscosity. The utility model discloses the attenuate purifies the work piece, simple structure and easily operation can be fast with place the mesa cooperation of being ground the silicon chip, through the rotatory period back of vacancy, can adsorb away the grinding granule on the mesa completely, still can adsorb other silica flour granules on the mesa simultaneously, purify the mesa completely and the surface of being ground the silicon chip contact, guarantee the mesa cleanliness factor, improve the wafer grinding quality, improve grinding efficiency.
Description
Technical Field
The utility model belongs to the technical field of semiconductor silicon chip processing, especially, relate to a silicon chip attenuate purifies work piece.
Background
In the process of thinning the semiconductor silicon wafer, the edge of the table top is abraded due to abrasion of the grinding wheel and the silicon wafer due to long-time grinding of the silicon wafer, and the situation that the geometric parameters of the surface of the silicon wafer are subjected to edge collapse is caused, namely the abrasion degree of the edge of the wafer relative to the middle position of the wafer is large; and the side of the silicon wafer in contact with the mesa was found to be scratched. Inspection has revealed that the mesa has a large number of ceramic pores, into which these abraded particulate impurities can enter during the grinding process, and a part of which adheres to the mesa surface. During the thinning of the silicon wafer, the granularity on the table top is reduced as much as possible, and the phenomenon that the particles scratch the surface of the silicon wafer so that the quality of the surface of the silicon wafer is scratched or damaged seriously is avoided. Therefore, the particle impurities on the table top need to be purified and cleaned regularly to keep the cleanliness of the table top and ensure the grinding quality of the silicon wafer.
The existing cleaning method is to directly bubble towards the ceramic holes, increase the air pressure when the ceramic holes bubble, discharge particle impurities in the ceramic holes as soon as possible, polish the table top by using oilstone, and finally scrape the particles on the surface by using a blade once and again.
SUMMERY OF THE UTILITY MODEL
The utility model provides a silicon chip attenuate purifies work piece especially is applicable to semiconductor silicon chip attenuate production, has solved among the prior art easy remaining grinding granule of attenuate mesa, leads to the silicon chip surface to be easily by the technical problem of granule fish tail.
In order to solve the technical problem, the utility model discloses a technical scheme is:
a silicon chip thinning purification workpiece is used for purifying one side surface of a placing table surface close to a silicon chip to be ground and comprises a substrate and an adsorption layer arranged on one side of the substrate; the side surface of the substrate is connected with the adsorption layer, and the structure of the substrate is matched with that of the adsorption layer; the side of the adsorption layer, which is far away from the substrate, is a plane, the area of the adsorption layer is not smaller than that of the silicon wafer to be ground, and the side of the adsorption layer, which is far away from the substrate, has viscosity.
Preferably, the adsorption layer has a circular structure.
Preferably, the diameter of the adsorption layer is smaller than the diameter of the mesa.
Preferably, the thickness of the adsorption layer is smaller than the thickness of the substrate.
Preferably, the thickness of the adsorption layer is 30-100 um.
Preferably, the substrate has a thickness of 700-.
Preferably, the substrate is circular.
Preferably, the substrate has the same diameter as the silicon wafer being ground.
Preferably, the diameter of the adsorption layer is the same as the diameter of the substrate.
Preferably, the adsorption layer is a structure made of a UV film or a PVC blue film.
Adopt the utility model discloses a silicon chip attenuate purifies work piece, simple structure and easily operation can be fast with place the mesa cooperation of being ground the silicon chip, through idle rotatory a period after, can adsorb away the grinding granule on the mesa completely, still can adsorb other silica flour granules on the mesa simultaneously, purify the mesa completely and the surface of being ground the silicon chip contact, guarantee the mesa cleanliness factor, improve the wafer grinding quality, improve grinding efficiency.
Drawings
Fig. 1 is a schematic structural diagram of a silicon wafer thinning and purifying workpiece according to an embodiment of the present invention.
In the figure:
10. table top 20, workpiece 21 and substrate
22. Adsorption layer
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The embodiment provides a silicon wafer thinning and purifying workpiece 20, as shown in fig. 1, which is used for purifying a side surface of a table top 10 close to a silicon wafer to be ground, most of the conventional table top 10 is made of a ceramic material, and not only has high hardness and is convenient to process, but also has a plurality of ceramic holes on the surface of the table top 10, and particle impurities or silicon powder generated by abrasion is easily adhered to the surface of the table top 10, the workpiece 20 is mainly arranged to be attached to the table top 10, and the table top 10 is rotated in an idle state to drive the workpiece 20, so that the particle impurities or silicon powder in the ceramic holes of the table top 10 penetrate out and are adsorbed and adhered by the workpiece 20 in a rotating process, and the adhesive workpiece 20 can adhere to and adsorb the particle impurities or silicon powder and can ensure that the workpiece 20 is not easily displaced when adhering the particle impurities or silicon powder.
The workpiece 20 comprises a substrate 21 and an adsorption layer 22 arranged on one side of the substrate 21, the side face of the substrate 21 is integrally connected with the adsorption layer 22, the structure of the workpiece is matched with that of the adsorption layer 22, and the substrate 21 and the adjacent side of the adsorption layer 22 are at least ensured to be comprehensively adhered and arranged, so that the full area of the adsorption layer 22 is ensured to be pressed by the substrate 21 such as a silicon wafer to be ground and completely contacted with the table top 10 during no-load rotation. One side of the adsorption layer 22, which is far away from the substrate 21 of the table 2, is a plane, and is arranged in a manner of being tightly attached to the table top 10, so that particle impurities embedded into ceramic holes in the surface of the table top 10 can be adsorbed conveniently; and the area of the adsorption layer 22 is not smaller than that of the silicon wafer to be ground, so that at least the placing surface of the area where the silicon wafer to be ground is placed is completely cleaned. And the side of the adsorption layer 22 far away from the substrate 21 has viscosity, so that the particle impurities on the table top 10 can be adsorbed by the side which is not close to the table top 10 and has adhesion, and the particles can not be dissociated or moved in the adsorption process, and are completely and quickly adhered and cleaned by the adsorption layer 22, thereby ensuring the cleanness of the table top 10. The adsorption layer 22 is a film having adhesion on one side, such as a UV film or a PVC blue film.
Preferably, the adsorption layer 22 is circular in structure and has a diameter smaller than that of the placing table 10, so as to ensure that the silicon wafer to be ground is completely placed in the placing area of the table 10 and the adsorption area of the adsorption layer 22 completely covers the area of the silicon wafer to be ground.
Preferably, the thickness of the adsorption layer 22 is smaller than that of the substrate 21, so that the substrate 21 can completely cover the adsorption layer 22, and the adsorption layer 22 can be stably attached to the table top 10 under the heavy pressure of the substrate 21 during the purification process, thereby ensuring the purification effect. And the thickness of the adsorption layer 22 is 30-100 um.
Preferably, the substrate 21 is selected as a debug silicon wafer, the external structure and size of which are the same as those of the silicon wafer to be polished, and the thickness of the substrate 21 is 700- & gt 1000 μm.
Preferably, the substrate 21 is circular and has the same diameter as the silicon wafer being polished.
Preferably, the diameter of the adsorption layer 22 is the same as the diameter of the substrate 21.
In the actual cleaning process, only the rotation of the table top 10 needs to be controlled, and the rotation direction of the table top 10 is ensured to be consistent with the rotation direction of the table top 10 in the actual grinding process; preferably, the table top 10 is rotated at the same rate as the actual grinding rotation.
The utility model discloses the operating mode condition that uses actual grinding is the benchmark, makes the external diameter of substrate 21 and adsorbed layer 22 the same and laminate completely, and unanimous with by the silicon chip diameter of grinding, can adsorb completely and fall granular impurity and silica flour in placing the district on mesa 10 to clean mesa 10 surface. The fixed cooperation of substrate 21 and adsorbed layer 22 is changeed in the cooperation of operation work piece 20 and mesa 10, also can guarantee simultaneously that ultra-thin adsorbed layer 22 is difficult to be deformed or the fold, guarantees that adsorbed layer 22 laminates mesa 10 cooperation completely to the region that adsorbed layer 22 and mesa 10 laminated does not have the bubble, guarantees adsorbed quality and clear effect.
The thinning purification process for purifying the workpiece 20 comprises the following steps:
the first embodiment is as follows:
and stopping grinding the silicon wafer after continuously grinding the silicon wafer for a certain time. The workpiece 20 is placed on the table top 10, the workpiece 20 is concentrically arranged with the table top 10, and the adsorption layer 22 is closely attached to the table top 10.
The table top 10 is controlled to drive the workpiece 20 to have no other external load, and the rotating direction of the table top 10 is ensured to be consistent with the rotating direction of the table top 10 during actual grinding, namely, during grinding of a silicon wafer; the rotation speed of the table top 10 is the same as that of the ground silicon wafer; and after the table top 10 drives the workpiece 20 to rotate for at least 1-3h, the rotation is stopped, and the particle impurities and the silicon powder adhered on the surface of the table top 10 can be completely removed.
For the frequency of cleaning the table 10 each time the wafer is continuously ground, a frequency of 1-2 times per week is used, and 1-3 hours each time.
The workpiece 20 is then removed and the adsorbent layer 22 is detached from the substrate 21. If the table-board 10 is cleaned again, an adsorption layer 22 is arranged on one side of the substrate 21, and the steps are repeated.
Directly bubbling the ceramic holes in the prior art, adjusting the air pressure when the ceramic holes are bubbled to discharge particle impurities in the ceramic holes as soon as possible, polishing the table top by using oilstone, and finally scraping particles on the surface by using a blade for one time; the table top 10 is cleaned by the cleaning process of the present embodiment, the cleaning time and the surface cleanliness of the table top 10 are compared with each other, and the obtained data are shown in table 1, and the following comparison conditions are the same. As can be seen from the following table, the purification process of the invention has the advantages of short purification time and good purification effect.
TABLE 1 comparison of test results
Example two:
and after the grinding wheel for grinding the silicon wafer is replaced, stopping grinding the silicon wafer. The workpiece 20 is placed on the table top 10, the workpiece 20 is concentrically arranged with the table top 10, and the adsorption layer 22 is closely attached to the table top 10.
The table top 10 is controlled to drive the workpiece 20 to have no other external load, and the rotating direction of the table top 10 is ensured to be consistent with the rotating direction of the table top 10 during actual grinding, namely, during grinding of a silicon wafer; the rotation speed of the table top 10 is the same as that of the ground silicon wafer; and after the table top 10 drives the workpiece 20 to rotate for at least 1-3h, the rotation is stopped, and the particle impurities and the silicon powder adhered on the surface of the table top 10 can be completely removed.
Because the grinding wheel is replaced, the grinding wheel and the silicon wafer are ground for the first time, and the table top 10 also needs to be cleaned again.
The frequency of cleaning the table top 10 each time the grinding wheel is changed is 1-2 times per week and 1-3 hours each time.
The workpiece 20 is then removed and the adsorbent layer 22 is detached from the substrate 21. If the table-board 10 is cleaned again, an adsorption layer 22 is arranged on one side of the substrate 21, and the steps are repeated.
The table top 10 was cleaned by the cleaning process proposed in the prior art and the present example, and the cleaning time and cleaning effect were compared, and the obtained data are shown in table 2. As can be seen from the following table, the purification time is saved by nearly 1.5h by adopting the purification process disclosed by the invention, and the purification effect is better.
TABLE 2 comparison of test results
Example three:
when the top 10 is modified, the top 10 needs to be further cleaned due to the high amount of particles and impurities that wear out of the top 10.
Specifically, the workpiece 20 is placed on the table top 10, the workpiece 20 is concentrically arranged with the table top 10, and the adsorption layer 22 is closely attached to the table top 10.
Controlling the table top 10 to drive the workpiece 20 to have no other external load, and ensuring that the rotating direction of the table top 10 is consistent with the rotating direction of the table top 10 when the silicon wafer is ground; the rotation speed of the table top 10 is the same as that of the ground silicon wafer; and after the table top 10 drives the workpiece 20 to rotate for at least 10-14h, the rotation is stopped, and the particle impurities and the silicon powder adhered on the surface of the table top 10 can be completely removed.
For the cleaning frequency of the table top 10 for each correction of the table top, the frequency of cleaning treatment for each correction is adopted, and each time is 10-14 h.
The workpiece 20 is then removed and the adsorbent layer 22 is detached from the substrate 21. If the table-board 10 is cleaned again, an adsorption layer 22 is arranged on one side of the substrate 21, and the steps are repeated.
The table top 10 was cleaned by the cleaning process proposed in the prior art and the present example, and the cleaning time and cleaning effect were compared, and the data obtained are shown in table 3. As can be seen from the following table, the purification time is improved by about 65% by adopting the purification process of the invention, and the purification effect is better.
TABLE 3 comparison of test results
According to the above, adopt the utility model relates to a silicon chip attenuate purifies work piece and adopts attenuate purification technology of this work piece, simple structure and easily operation, can be fast with place the mesa cooperation of being ground the silicon chip, through idle rotatory a period after, can adsorb away the grinding granule on the mesa completely, still can adsorb other silica flour granules on the mesa simultaneously, purify the mesa and the surface of being ground the silicon chip contact completely, guarantee the mesa cleanliness factor, improve the wafer grinding quality, improve grinding efficiency.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention, and should not be construed as limiting the scope of the present invention. All the equivalent changes and improvements made according to the application scope of the present invention should still fall within the patent coverage of the present invention.
Claims (10)
1. A silicon chip thinning purification workpiece is used for purifying one side surface of a placing table surface close to a silicon chip to be ground and is characterized by comprising a substrate and an adsorption layer arranged on one side of the substrate; the side surface of the substrate is connected with the adsorption layer, and the structure of the substrate is matched with that of the adsorption layer; the side of the adsorption layer, which is far away from the substrate, is a plane, the area of the adsorption layer is not smaller than that of the silicon wafer to be ground, and the side of the adsorption layer, which is far away from the substrate, has viscosity.
2. The silicon wafer thinning purification workpiece as claimed in claim 1, wherein the adsorption layer is of a circular structure.
3. The silicon wafer thinning purification workpiece as claimed in claim 2, wherein the diameter of the adsorption layer is smaller than the diameter of the mesa.
4. The silicon wafer thinning purification workpiece as claimed in any one of claims 1 to 3, wherein the thickness of the adsorption layer is smaller than the thickness of the substrate.
5. The silicon wafer thinning purification workpiece according to claim 4, wherein the thickness of the adsorption layer is 30-100 um.
6. The silicon wafer thinning purification workpiece as claimed in claim 5, wherein the substrate thickness is 700- & 1000 μm.
7. The silicon wafer thinning purification workpiece as claimed in any one of claims 1 to 3 and 5 to 6, wherein the substrate is circular.
8. The silicon wafer thinning purification workpiece as claimed in claim 7, wherein said substrate has the same diameter as said silicon wafer being polished.
9. The silicon wafer thinning purification workpiece as claimed in claim 8, wherein the diameter of the adsorption layer is the same as the diameter of the substrate.
10. The silicon wafer thinning purification workpiece as claimed in any one of claims 1 to 3, 5 to 6 and 8 to 9, wherein the adsorption layer is a structure made of a UV film or a PVC blue film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120023038.6U CN214418505U (en) | 2021-01-06 | 2021-01-06 | Silicon chip thinning and purifying workpiece |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120023038.6U CN214418505U (en) | 2021-01-06 | 2021-01-06 | Silicon chip thinning and purifying workpiece |
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| Publication Number | Publication Date |
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| CN214418505U true CN214418505U (en) | 2021-10-19 |
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| CN202120023038.6U Active CN214418505U (en) | 2021-01-06 | 2021-01-06 | Silicon chip thinning and purifying workpiece |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112792729A (en) * | 2021-01-06 | 2021-05-14 | 天津中环领先材料技术有限公司 | Silicon wafer thinning and purifying workpiece and thinning and purifying process adopting same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112792729A (en) * | 2021-01-06 | 2021-05-14 | 天津中环领先材料技术有限公司 | Silicon wafer thinning and purifying workpiece and thinning and purifying process adopting same |
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Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 inside. Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: No.12 Haitai East Road, Huayuan Industrial Zone, Binhai New Area, Tianjin Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region before: China Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. |
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| CP03 | Change of name, title or address |