CN1299336C - Grinding process for back of wafer - Google Patents
Grinding process for back of wafer Download PDFInfo
- Publication number
- CN1299336C CN1299336C CNB031500099A CN03150009A CN1299336C CN 1299336 C CN1299336 C CN 1299336C CN B031500099 A CNB031500099 A CN B031500099A CN 03150009 A CN03150009 A CN 03150009A CN 1299336 C CN1299336 C CN 1299336C
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- Prior art keywords
- wafer
- keeper
- grinding
- abrasive disk
- back side
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- 238000000227 grinding Methods 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000002390 adhesive tape Substances 0.000 claims description 24
- 238000005520 cutting process Methods 0.000 claims description 23
- 238000005516 engineering process Methods 0.000 claims description 21
- 238000010521 absorption reaction Methods 0.000 claims description 19
- 230000001681 protective effect Effects 0.000 claims description 6
- 238000012423 maintenance Methods 0.000 claims description 5
- 238000001125 extrusion Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000001179 sorption measurement Methods 0.000 abstract 3
- 238000005336 cracking Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 181
- 238000010586 diagram Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 6
- 230000010354 integration Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The present invention relates to a manufacture process for grinding the back of a wafer, which is proposed for providing a semiconductor manufacture process with the advantages of integrating the manufacture process, reducing move operation, preventing the wafer from warping and cracking, and absolutely positioning. The present invention comprises a wafer providing step for providing a wafer provided with an active face and a back, a wafer assembling step for assembling the wafer to a grinding disc in an adsorption fixing mode and making the back of the wafer exposed outside the assembled wafer, a wafer grinding step for grinding the back of the wafer on the grinding disc, a positioning member pasting step for pasting positioning members to the back of the ground wafer, and a wafer disassembling step for making the wafer disengaged from the grinding disc by removing the adsorption force of the grinding disc, wherein the grinding disc keeps the adsorption force to the wafer in the positioning member pasting step, and the positioning members are used as a loading device to move the wafer in the wafer disassembling step.
Description
Technical field
The invention belongs to semiconductor technology, particularly a kind of wafer reverse side grinding technology.
Background technology
Along with the thinning trend of semiconductor package, the wafer in the package assembling also needs to meet thinner thickness.So propose wafer reverse side grinding technology.Known wafer reverse side grinding technology reaches before the wafer cutting technique after being performed on the integrated circuit manufacture craft, so that a plurality of wafers can once be finished the thinning processing on the wafer.
As shown in Figure 1 and Figure 2, traditional wafer reverse side grinding technology and wafer cutting technique comprise the steps:
Wafer is provided
Provide to have the wafer 20 that forms the integrated circuit active surface 21 and the corresponding back side 22, attach protective tapes 23 at wafer 20 active surfaces 21 usually.
Step 2
Load wafer
Adopt the vacuum suction mode, in the mode of wafer active surface 21 wafer 20 absorption are fixed on the abrasive disk 31 towards abrasive disk (grinding chuck) 31, wafer 20 is loaded on traditional wafer reverse side grinding equipment, at this moment, the back side 22 of wafer 20 appears.
Step 3
Grind wafer
With the back side 22 of grinding head 32 grinding wafers 20, with the back side 221 after the thinner grinding of formation.
Step 4
Unload wafer
With the back side 221 after 20 grindings of adsorbent equipment contact wafer, wafer 20 is taken out by milling apparatus.
Step 5
Remove adhesive tape
The wafer 20 that takes out is moved to adhesive tape removal microscope carrier, to remove protective tapes 23.
Step 6
The cutting crystal wafer prelocalization
Paste another locating adhesive tape at wafer 20 back sides 221.
Step 7
Cutting crystal wafer
Wafer 20 is moved to the wafer cutting equipment, wafer 20 is cut.
As mentioned above, the step 4 that unloads wafer certainly needs multiple tracks to move action between the step 7 of cutting crystal wafer, carries out the conversion of board.Because known small size, angularity (wafer war page) as wafer behind 4in or the 6in wafer reverse side grinding is still not obvious, especially can received scope, but increasing along with wafer size, more than 6in, or the thickness that grinds more is strict with, as 12 Mills when following, as shown in Figure 2, the warpage of grinding back wafer 20 is quite obvious, the generation of this warpage more becomes especially serious because of wafer integrated circuit technology residual stress and as the thinning of base semiconductors such as silicon, to such an extent as to all very easily cause the cracked of wafer 20 in step 4 that unloads wafer or follow-up carrying step.
Disclosed wafer cutting technique is a cutting crystal wafer in advance before grinding, the back side of wafer is to paste first to paste band, pasting second in its active surface behind the cutting crystal wafer pastes band and removes the first subsides band, grind the back wafer and promptly form a plurality of wafers, the back side is pasted the 3rd subsides band and is removed second and paste band after a plurality of wafer wear downs again, therefore, upset is quite frequent with the number of times of carrying, the positioning correcting of wafer needs to be strict with, in addition, when the needs overmastication, the wafer that has separated at the second subsides band may produce offset deviation or collide damage when grinding because of adhesive force is not enough.
Summary of the invention
The purpose of this invention is to provide a kind of process integration, reduce the carrying action, prevent the wafer reverse side grinding technology that silicon wafer warpage is cracked, the location is certain.
The present invention includes provide have active surface and back side wafer the wafer step is provided, with the absorption fixed form with wafer load on the abrasive disk and make loading wafer step that wafer rear manifests, the keeper that attaches keeper at the grinding wafer step of on the abrasive disk chip back surface being ground, the back side behind grinding wafer attaches step and unload the wafer step by what remove that the abrasive disk absorption affinity makes that wafer breaks away from abrasive disk; Grind in the step that wafer step and keeper attach all be with wafer load on abrasive disk, and attach in the step abrasive disk maintenance to the absorption affinity of wafer at keeper; Unloading in the wafer step is to move wafer with keeper as carrier.
Wherein:
Provide that the active surface in wafer is pasted with the stickiness protective tapes in the wafer step.
Provide the size of wafer in the wafer step to can be 8in or 12in.
Grind the wafer step and divide into rough lapping and fine lapping.
The thickness that grinds wafer in the wafer step is to be ground to below 12 Mills.
The keeper that keeper attaches step comprises locating ring and locating adhesive tape, and locating ring has the opening greater than wafer size; Locating adhesive tape is to be attached at locating ring and to be attached at the back side behind the grinding wafer via opening.
It is earlier the locating ring of keeper to be arranged on the abrasive disk that keeper attaches step, in the roll extrusion mode locating adhesive tape is attached at the back side behind locating ring and the grinding wafer simultaneously again.
A kind of wafer reverse side grinding technology, it comprise with the absorption fixed form with wafer load on the abrasive disk and make loading wafer step that wafer rear manifests, the keeper that attaches keeper at the grinding wafer step of on the abrasive disk chip back surface being ground and the back side behind grinding wafer attaches step; Grind in the step that wafer step and keeper attach all be with wafer load on abrasive disk, and keeper attach abrasive disk maintenance in the step to the absorption affinity of wafer so that keeper is smooth be attached at grinding wafer after the back side.
Keeper comprises locating ring and locating adhesive tape in the keeper attaching step, and locating ring has the opening greater than wafer size; Locating adhesive tape is to be attached at locating ring and to be attached at the back side behind the grinding wafer via opening, so that do not need to contact the back side behind the grinding wafer in the follow-up handling process.
Keeper is the keeper that is applicable to the wafer cutting technique in the keeper attaching step.
Since the present invention includes provide have active surface and back side wafer the wafer step is provided, with the absorption fixed form with wafer load on the abrasive disk and make loading wafer step that wafer rear manifests, the keeper that attaches keeper at the grinding wafer step of on the abrasive disk chip back surface being ground, the back side behind grinding wafer attaches step and unload the wafer step by what remove that the abrasive disk absorption affinity makes that wafer breaks away from abrasive disk; Grind in the step that wafer step and keeper attach all be with wafer load on abrasive disk, and attach in the step abrasive disk maintenance to the absorption affinity of wafer at keeper; Unloading in the wafer step is to move wafer with keeper as carrier.In wafer back-grinding equipment, wafer be adsorbed on the abrasive disk with same abrasive disk load wafer, grind wafer, keeper attaches, unload step such as wafer, after grinding, wafer is to be attached on the locating adhesive tape of keeper, in the carrying action of unloading wafer step and subsequent step, can utilize the carrier of keeper as wafer, and do not need to contact the back side behind the grinding wafer, wafer sticks up and produces cracked effect thereby have process integration, reduce the carrying action and prevent to grind afterwards, is specially adapted to the ultra-thin grinding of large scale wafer.Not only process integration, minimizing carrying action, and prevent that silicon wafer warpage is cracked, the location is certain, thus reach purpose of the present invention.
Description of drawings
Fig. 1, be traditional wafer reverse side grinding and cutting technique flow diagram.
Fig. 2, be traditional wafer reverse side grinding process schematic representation.
Fig. 3, for flow diagram of the present invention.
Fig. 4, for step 1 schematic diagram of the present invention.
Fig. 5, for step 2 schematic diagram of the present invention.
Fig. 6, for step 3 schematic diagram of the present invention.
Fig. 7, for step 4 schematic diagram of the present invention.
Fig. 8, for step 5 schematic diagram of the present invention.
Fig. 9, for step 6 schematic diagram of the present invention.
Figure 10, for step 7 schematic diagram of the present invention.
Figure 11, for schematic flow sheet of the present invention.
Figure 12, use the equipment schematic diagram for the present invention.
Embodiment
As Fig. 3, Figure 11, shown in Figure 12, the present invention includes following steps:
Wafer is provided
As shown in Figure 4, prepare to have the wafer 50 at the active surface 51 and the corresponding back side 52, finished integrated circuit on the active surface 51 and made, as the integrated circuit of microprocessor, microcontroller, memory body or special applications.Preferably, wafer 50 is the high frequency memory body, as random access memories such as DDR, Rambus, TDR or QDR.The size of wafer can be 4in, 5in, 6in, 8in or 12in, and preferably, wafer is 8in or 12in; Preferably the active surface 51 at wafer 50 is pasted with peelable stickiness protective tapes 53.
Step 2
Load wafer
As shown in Figure 5, with absorption fixed forms such as vacuum suction or Electrostatic Absorption wafer 50 is loaded (loading) on the abrasive disk (grinding chuck) 61 of wafer reverse side grinding equipment 90, and make the back side 52 of wafer 50 appear.
Step 3
Grind wafer
As Figure 11, shown in Figure 12, abrasive disk 61 is that the loading work station 91 at wafer reverse side grinding equipment 90 utilizes moving of loading arm 911, wafer 50 is put to abrasive disk 61, and afterwards, abrasive disk 61 is to grind to grinding 92 pairs of wafers 50 of work station along the axle center turn.
Grinding wafer area is divided in the rough lapping operation of rough lapping work station 92 execution and the fine lapping operation of carrying out in fine lapping work station 93; As shown in Figure 6, in abrasive disk 61 running fixes after rough lapping work station 92 or fine lapping work station 93, as shown in Figure 6, with the back side 52 that suitable grinding head 62 grinds wafer 50, grind the back side 521, back to form, according to the thickness requirement difference, the thickness that grinds back wafer 50 can reach below 12 Mills (mil), because technology of the present invention can not need to consider the angularity of wafer 50, grinds the thickness of back wafer 50 even can reach 6 Mills, 4 Mills or lower.
Step 4
Keeper attaches
As Figure 11, shown in Figure 12, abrasive disk 61 turns to keeper attaches work station 94.As shown in Figure 7, on abrasive disk 61, keeper 70 is attached at wafer 50 and grinds the back side 521, back, in the attaching process, abrasive disk 61 still keeps the absorption affinity to wafer 50, make wafer 50 flatly be arranged on the abrasive disk 61, be beneficial to the keeper 70 smooth wafers 50 that are attached at and grind the back side 521, back.Keeper 70 comprises locating ring 71 and locating adhesive tape 73, and locating ring 71 has greater than wafer 50 sized opening 72, and generally speaking, locating ring 71 is the hard metal ring; Locating adhesive tape 73 is to be attached at locating ring 71 and to be attached at wafer 50 via opening 72 to grind the back side 521, back; Preferably keeper 70 is applicable to the keeper of wafer cutting technique.As Fig. 7, shown in Figure 12, keeper attaches work station 94 rolling device 63 is set, and it can be the roller that is coated with soft rubber.When keeper attaches operation, be behind abrasive disk 61 location, locating ring 71 with keeper 70 is arranged on the abrasive disk 61 earlier, relend by rolling device 63 in the roll extrusion mode 73 roll extrusion of large tracts of land locating adhesive tape in the locating ring 71 and wafer 50 back sides, make locating adhesive tape 73 be attached at the locating ring 71 and wafer 50 back sides simultaneously, suitable again cutting locating adhesive tape 73 sticks in wafer 50 with formation and grinds the keeper 70 at the back side 521, back.
Step 5
Unload wafer
As Fig. 8, Figure 11, shown in Figure 12, abrasive disk 61 turns are to unloading work station 95; Preferably unload work station 95 and be integrated into same work station with loading work station 91; promptly allay the absorption affinity of abrasive disk 61 earlier; make the wafer 50 of having finished grinding can break away from abrasive disk 61; wafer 50 warpage slightly usually when no absorption affinity; move wafer 50 by keeper 70; promptly unload underarm 912 or other device stationary positioned ring 71 with what unload work station 95; and need not contact the back side 521 after wafer 50 grinds; just wafer 50 can be unloaded (unloading) by wafer reverse side grinding equipment 90, for subsequent step.
Step 6
Remove adhesive tape
As shown in Figure 9, the wafer 50 that takes out is moved to adhesive tape removal microscope carrier 81, to remove protective tapes 53 as the carrier of wafer 50 with keeper 70.
Step 7
Cutting crystal wafer
As shown in figure 10, as the carrier of wafer 50 wafer 50 is carried to the wafer cutting equipment with keeper 70, the locating adhesive tape 73 of keeper 70 is the cutting beds 82 that adhere on the wafer cutting equipment, with cutting tool 83 wafer 50 is cut into a plurality of wafers 54.
Therefore, according to the present invention, in wafer back-grinding equipment, wafer 50 is to be adsorbed on the abrasive disk 61 to load wafer with same abrasive disk 61, grind wafer, keeper attaches, unload steps such as wafer, after grinding, wafer 50 is to be attached on the locating adhesive tape 73 of keeper 70, in the carrying action of unloading wafer step and subsequent step, can utilize keeper to do 70 and be the carrier of wafer 50, and do not need to contact the back side 521 after wafer 50 grinds, keeper 70 is applicable to wafer reverse side grinding equipment and wafer cutting equipment, the locating adhesive tape 73 of keeper 70 is the cutting beds 82 that adhere on the wafer cutting equipment, with cutting tool 83 wafer 50 is cut into a plurality of wafers 54, therefore, the present invention has process integration, reduce the carrying action and prevent to grind the back wafer and stick up and produce cracked effect, be specially adapted to the ultra-thin grinding of large scale wafer.
Claims (10)
1, a kind of wafer reverse side grinding technology, it comprise provide have active surface and back side wafer the wafer step is provided, with the absorption fixed form with wafer load on the abrasive disk and make the loading wafer step that wafer rear manifests, the grinding wafer step of on abrasive disk, chip back surface being ground and unload the wafer step by what remove that the abrasive disk absorption affinity makes that wafer breaks away from abrasive disk; It is characterized in that described grinding wafer step and unload the keeper attaching step that the back side that is provided with between the wafer step behind grinding wafer attaches keeper; Grind in the step that wafer step and keeper attach all be with wafer load on abrasive disk, and attach in the step abrasive disk maintenance to the absorption affinity of wafer at keeper; Unloading in the wafer step is to move wafer with keeper as carrier.
2, wafer reverse side grinding technology according to claim 1 is characterized in that describedly providing that the active surface in wafer is pasted with the stickiness protective tapes in the wafer step.
3, wafer reverse side grinding technology according to claim 1 is characterized in that the described size of wafer in the wafer step that provides can be 8in or 12in.
4, wafer reverse side grinding technology according to claim 1 is characterized in that described grinding wafer step divides into rough lapping and fine lapping.
5,, it is characterized in that the thickness of wafer in the described grinding wafer step is to be ground to below 12 Mills according to claim 1 or 4 described wafer reverse side grinding technologies.
6, wafer reverse side grinding technology according to claim 1 is characterized in that the keeper of described keeper attaching step comprises locating ring and locating adhesive tape, and locating ring has the opening greater than wafer size; Locating adhesive tape is to be attached at locating ring and to be attached at the back side behind the grinding wafer via opening.
7, wafer reverse side grinding technology according to claim 6, it is characterized in that it is earlier the locating ring of keeper to be arranged on the abrasive disk that described keeper attaches step, in the roll extrusion mode locating adhesive tape is attached at the back side behind locating ring and the grinding wafer simultaneously again.
8, a kind of wafer reverse side grinding technology, it comprises with the absorption fixed form wafer load on the abrasive disk and make loading wafer step that wafer rear manifests and the grinding wafer step of on abrasive disk chip back surface being ground; It is characterized in that being provided with after the described grinding wafer step keeper that the back side behind grinding wafer attaches keeper and attach step; Grind in the step that wafer step and keeper attach all be with wafer load on abrasive disk, and keeper attach abrasive disk maintenance in the step to the absorption affinity of wafer so that keeper is smooth be attached at grinding wafer after the back side.
9, wafer reverse side grinding technology according to claim 8 is characterized in that keeper comprises locating ring and locating adhesive tape in the described keeper attaching step, and locating ring has the opening greater than wafer size; Locating adhesive tape is to be attached at locating ring and to be attached at the back side behind the grinding wafer via opening, so that do not need to contact the back side behind the grinding wafer in the follow-up handling process.
10, wafer reverse side grinding technology according to claim 8 is characterized in that keeper is the keeper that is applicable to the wafer cutting technique in the described keeper attaching step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031500099A CN1299336C (en) | 2003-07-29 | 2003-07-29 | Grinding process for back of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031500099A CN1299336C (en) | 2003-07-29 | 2003-07-29 | Grinding process for back of wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1577756A CN1577756A (en) | 2005-02-09 |
| CN1299336C true CN1299336C (en) | 2007-02-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031500099A Expired - Fee Related CN1299336C (en) | 2003-07-29 | 2003-07-29 | Grinding process for back of wafer |
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| Country | Link |
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| CN (1) | CN1299336C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101367192B (en) * | 2007-08-17 | 2011-05-11 | 中芯国际集成电路制造(上海)有限公司 | Wafer reverse side grinding method |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108500826A (en) * | 2017-02-27 | 2018-09-07 | 东莞新科技术研究开发有限公司 | Wafer reverse side grinding method |
| CN110039382A (en) * | 2018-10-16 | 2019-07-23 | 天通控股股份有限公司 | A kind of thining method of large-size ultra-thin lithium tantalate wafer |
| CN109560034A (en) * | 2018-11-05 | 2019-04-02 | 紫光宏茂微电子(上海)有限公司 | The technique of chip attachment |
| CN110270891B (en) * | 2019-07-17 | 2020-06-19 | 浙江台佳电子信息科技有限公司 | Production process of wafer-level glass substrate for VR projection display |
| CN113649859A (en) * | 2021-08-17 | 2021-11-16 | 顺芯科技有限公司 | Method for accelerating metabolism of wafer grinding waste |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000117624A (en) * | 1998-10-09 | 2000-04-25 | Speedfam-Ipec Co Ltd | Backing sheet and grinding device using the sheet |
| EP1263026A2 (en) * | 2001-05-21 | 2002-12-04 | Tokyo Seimitsu Co.,Ltd. | Wafer planarization apparatus |
| JP2003147300A (en) * | 2001-11-12 | 2003-05-21 | Lintec Corp | Surface protecting sheet in grinding wafer rear and method for producing semiconductor chip |
-
2003
- 2003-07-29 CN CNB031500099A patent/CN1299336C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000117624A (en) * | 1998-10-09 | 2000-04-25 | Speedfam-Ipec Co Ltd | Backing sheet and grinding device using the sheet |
| EP1263026A2 (en) * | 2001-05-21 | 2002-12-04 | Tokyo Seimitsu Co.,Ltd. | Wafer planarization apparatus |
| JP2003147300A (en) * | 2001-11-12 | 2003-05-21 | Lintec Corp | Surface protecting sheet in grinding wafer rear and method for producing semiconductor chip |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101367192B (en) * | 2007-08-17 | 2011-05-11 | 中芯国际集成电路制造(上海)有限公司 | Wafer reverse side grinding method |
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| Publication number | Publication date |
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| CN1577756A (en) | 2005-02-09 |
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