CN113649859A - Method for accelerating metabolism of wafer grinding waste - Google Patents
Method for accelerating metabolism of wafer grinding waste Download PDFInfo
- Publication number
- CN113649859A CN113649859A CN202110943871.7A CN202110943871A CN113649859A CN 113649859 A CN113649859 A CN 113649859A CN 202110943871 A CN202110943871 A CN 202110943871A CN 113649859 A CN113649859 A CN 113649859A
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- Prior art keywords
- grinding
- wafer
- nozzle
- polishing
- water
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000002699 waste material Substances 0.000 title claims abstract description 18
- 230000004060 metabolic process Effects 0.000 title claims abstract description 13
- 230000007246 mechanism Effects 0.000 claims abstract description 8
- 239000000853 adhesive Substances 0.000 claims abstract description 5
- 230000001070 adhesive effect Effects 0.000 claims abstract description 5
- 230000001681 protective effect Effects 0.000 claims abstract description 5
- 230000002503 metabolic effect Effects 0.000 claims abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 239000007921 spray Substances 0.000 claims description 16
- 238000005498 polishing Methods 0.000 claims description 15
- 206010006514 bruxism Diseases 0.000 claims description 11
- 238000004804 winding Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000012634 fragment Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 6
- 239000002390 adhesive tape Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a method for accelerating the grinding of metabolic wafers, which comprises the steps of providing a wafer, wherein the wafer is provided with a front surface and a back surface of an integrated circuit, a protective adhesive is attached to the front surface of the wafer, and then the wafer is sent into a grinding mechanism of a machine table to be operated so as to reach a set thickness; the invention not only can effectively achieve the thinning result, but also can effectively reduce the quality abnormity of the ground fragments and wafers in a mode of accelerating the metabolism of grinding wastes.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a method for accelerating metabolism of wafer grinding waste.
Background
Nowadays, semiconductor technology advances day by day, and future integrated circuit trend is to grind and thin the wafer to achieve the following packaging process to stack and package a plurality of thinned chips, and the wafer thinning can make the chip realize the advantages of low power and low on-resistance, not only effectively prolong the product life, but also more effectively improve the efficiency in use.
In the current wafer polishing technology, most wafer polishing processes are modified by strengthening the function of attaching adhesive tape to the wafer (such as CN101367192A and CN108500862A) or etching process to achieve wafer thinning effect (TW201810400A) in order to avoid wafer breakage abnormality during polishing process, but the above invention and modification need to consume extra cost and equipment improvement to achieve the purpose of wafer thinning.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a method for accelerating the metabolism of wafer grinding wastes. The method can effectively avoid wafer fragment caused by poor metabolism of grinding wastes, greatly reduce deep scraping and knife line abnormity of the wafer during grinding, and effectively improve the productivity and the yield rate of pulling.
The technical scheme of the invention is realized as follows:
a method for accelerating metabolism of wafer polishing waste comprises the following steps:
providing a wafer with the front and back of the integrated circuit, attaching a protective adhesive to the front of the wafer, and then feeding the wafer into a grinding mechanism of a machine to perform operation so as to achieve a set thinness.
Further, the grinding method is divided into coarse grinding and fine grinding.
Further, the ground wafer size may be 4in, 6in, 8in, and 12 in.
Further, the final grinding thickness can reach below 12 mil.
Further, the grinding mechanism comprises a grinding rotating shaft, a grinding wheel, a fixed disc and a windable spray pipe, and the working steps of the grinding machine are as follows: the wafer is first adsorbed and fixed onto the fixing disc in vacuum, and the rotating grinding shaft, the grinding wheel and the fixing disc are used to grind at high speed and the water is sprayed via the winding nozzle to clean the waste.
Further, the optimal rotation speed of the grinding rotating shaft during rough grinding is 2100rpm to 2800rpm, and the rotation direction of the grinding rotating shaft is clockwise.
Further, the optimum rotation speed of the grinding rotating shaft during fine grinding is 1050 rpm-1250 rpm, and the rotation direction is clockwise.
Furthermore, a plurality of grinding teeth are arranged on the grinding wheel.
Furthermore, the fixing plate can be made of ceramic or resin.
Further, the fixed disk vacuum adsorption pressure is at least 65 kpa.
Further, the optimal rotating speed of the fixed disc is 150 rpm-210 rpm, and the rotating direction of the fixed disc is anticlockwise.
Furthermore, the winding type spray pipe is composed of a spray nozzle and a plurality of connecting pieces.
Further, the pure water can be sprayed out from the winding type spray pipe.
Furthermore, one end of the connecting piece is fixedly connected with the machine table, and the other end of the connecting piece is fixedly connected with the nozzle.
Furthermore, the windable nozzle is required to spray water onto the grinding teeth during the grinding operation.
Furthermore, the optimal distance between the winding type spray pipe and the grinding teeth is 2 cm-3 cm.
Further, the optimal distance between the nozzle of the winding type spray pipe and the fixed disc is 1 cm-2 cm.
Furthermore, the optimal water flow rate of the sprayed water during coarse grinding of the windable spray pipe is 9-10 l/min.
Furthermore, the best water flow rate of the spray pipe is 4l/min to 7l/min when the coiled spray pipe is finely ground.
The working principle and the effect of the scheme are as follows:
the invention is different from the prior art in that the prior art largely utilizes the improved adhesive tape to avoid wafer fragmentation and increase etching process to achieve the purpose of wafer thinning, and the invention not only can effectively achieve the thinning result but also can effectively reduce quality abnormity after fragmentation and wafer grinding in a mode of accelerating metabolism grinding waste.
Drawings
Fig. 1 is a schematic structural diagram of embodiment 1 of the present invention.
Reference numerals: grinding shaft 1, grinding wheel 2, windable nozzle 3, wafer 4, fixed disk 5, grinding tooth 21, connecting piece 31, nozzle 32.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as upper, lower, left, right, front and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
Example 1
Referring to fig. 1, a method for accelerating metabolism of wafer polishing waste is disclosed, wherein a protective adhesive is adhered to the front surface of a wafer 4 before the wafer polishing operation, and then the wafer 4 is sent to a polishing mechanism for polishing operation, the polishing operation is divided into two operation modes of coarse polishing and fine polishing according to requirements, the polishing operation is suitable for wafer sizes of 4in, 6in, 8in and 12in, and the thickness of the final wafer product can reach below 12 mil.
Sending the wafer 4 into a machine grinding mechanism, and adsorbing the surface, which is stuck with the protective adhesive, of the front surface of the wafer 4 on the fixed disk 5 by using vacuum, wherein the vacuum adsorption pressure of the fixed disk is at least 65 kpa; under the action of grinding operation, the rotation directions of the grinding rotating shaft 1 and the fixed disk 5 are opposite, and the grinding teeth 21 of the grinding wheel 2 locked on the grinding rotating shaft 1 are used for grinding the wafer 4 with a set thin thickness under the high-speed operation, in the course of coarse grinding and fine grinding operation, because under the high-speed operation, a lot of grinding wastes are produced under the grinding of the grinding teeth 21 and the wafer 4, a large amount of pure water is sprayed onto the grinding teeth 21 at a high speed in the grinding operation by using the winding type spray pipe 3, and by means of high-speed water flow, the wafer wastes can be effectively and quickly metabolized, and the problems that the wafer wastes are remained on the grinding teeth 21 or the wafer 4 is abnormal in knife lines and broken pieces due to insufficient metabolism can be avoided. The optimal distance between the winding spray pipe and the grinding teeth is 2 cm-3 cm. The optimal distance between the nozzle of the winding type spray pipe and the fixed disc is 1 cm-2 cm. The optimal water flow rate of the spraying water during coarse grinding of the windable spray pipe is 9-10 l/min. The optimal water flow rate of the sprayed water is 4-7 l/min when the wound spray pipe is finely ground.
Considering the narrow space inside the grinding mechanism, in order to accelerate the metabolism and grinding of the waste effectively, the connecting member 31 of the flexible nozzle 3 of the present invention can be adjusted and set according to the operation requirement, and can flex in the space, so that a large amount of pure water can be effectively sprayed out from the nozzle 32 to flush the metabolism and grinding of the waste.
Finally, the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all of them should be covered in the claims of the present invention.
Claims (19)
1. A method for accelerating the metabolism of wafer polishing wastes, comprising the steps of: providing a wafer with the front and back of the integrated circuit, attaching a protective adhesive to the front of the wafer, and then feeding the wafer into a grinding mechanism of a machine to perform operation so as to achieve a set thinness.
2. The method as claimed in claim 1, wherein the grinding process is divided into coarse grinding and fine grinding.
3. The method as claimed in claim 2, wherein the wafer size is 4in, 6in, 8in and 12 in.
4. The method as claimed in claim 3, wherein the polishing thickness is up to 12mil or less.
5. The method of claim 4, wherein the grinding mechanism comprises a grinding spindle, a grinding wheel, a fixed disk, and a windable nozzle, and the grinding machine comprises the following steps: the wafer is first adsorbed and fixed onto the fixing disc in vacuum, and the rotating grinding shaft, the grinding wheel and the fixing disc are used to grind at high speed and the water is sprayed via the winding nozzle to clean the waste.
6. The method as claimed in claim 5, wherein the rotation speed of the grinding spindle during rough grinding is between 2100rpm and 2800rpm, and the rotation direction is clockwise.
7. The method as claimed in claim 5, wherein the optimum rotation speed of the grinding spindle during fine grinding is 1050 rpm-1250 rpm, and the rotation direction is clockwise.
8. The method as claimed in claim 5, wherein the grinding wheel has a plurality of grinding teeth.
9. The method as claimed in claim 5, wherein the fixing plate is made of ceramic or resin.
10. The method of claim 5, wherein the pressure of the stationary platen is at least 65 kpa.
11. The method as claimed in claim 5, wherein the rotation speed of the fixed platen is preferably 150rpm to 210rpm, and the rotation direction is counterclockwise.
12. The method of claim 5, wherein the flexible nozzle comprises a nozzle and a plurality of connectors.
13. The method of claim 5, wherein the water is sprayed from the windable nozzle as pure water.
14. The method of claim 12, wherein the connecting member is fixedly connected to the machine at one end and to the nozzle at the other end.
15. A method of accelerating metabolic wafer polishing waste according to claim 8 wherein the flexible nozzle sprays water onto the polishing teeth during the polishing action.
16. The method of claim 15, wherein the distance between the flexible nozzle and the grinding teeth is preferably between 2cm and 3 cm.
17. The method of claim 12, wherein the distance between the nozzle of the flexible nozzle and the stationary platen is preferably between 1cm and 2 cm.
18. The method as claimed in claim 12, wherein the water flow rate of the water jet during rough grinding is 9-10 l/min.
19. The method of claim 12, wherein the water flow rate of the flexible nozzle is 4-7 l/min for fine grinding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110943871.7A CN113649859A (en) | 2021-08-17 | 2021-08-17 | Method for accelerating metabolism of wafer grinding waste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110943871.7A CN113649859A (en) | 2021-08-17 | 2021-08-17 | Method for accelerating metabolism of wafer grinding waste |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113649859A true CN113649859A (en) | 2021-11-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110943871.7A Pending CN113649859A (en) | 2021-08-17 | 2021-08-17 | Method for accelerating metabolism of wafer grinding waste |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113649859A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114211317A (en) * | 2021-12-24 | 2022-03-22 | 滁州钰顺企业管理咨询合伙企业(有限合伙) | Method for reducing wear of grinding wheel |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6468135B1 (en) * | 1999-04-30 | 2002-10-22 | International Business Machines Corporation | Method and apparatus for multiphase chemical mechanical polishing |
| CN1577756A (en) * | 2003-07-29 | 2005-02-09 | 南茂科技股份有限公司 | Grinding process for back of wafer |
| JP2007027488A (en) * | 2005-07-19 | 2007-02-01 | Komatsu Electronic Metals Co Ltd | Method for polishing semiconductor wafer |
| CN103100964A (en) * | 2011-11-11 | 2013-05-15 | 中芯国际集成电路制造(上海)有限公司 | Metal grinding protecting device, metal grinding protecting method and chemical machinery grinding system |
| CN105619239A (en) * | 2016-02-26 | 2016-06-01 | 上海华力微电子有限公司 | Scratching-preventing chemical mechanical grinding device and chemical mechanical grinding method thereof |
-
2021
- 2021-08-17 CN CN202110943871.7A patent/CN113649859A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6468135B1 (en) * | 1999-04-30 | 2002-10-22 | International Business Machines Corporation | Method and apparatus for multiphase chemical mechanical polishing |
| CN1577756A (en) * | 2003-07-29 | 2005-02-09 | 南茂科技股份有限公司 | Grinding process for back of wafer |
| JP2007027488A (en) * | 2005-07-19 | 2007-02-01 | Komatsu Electronic Metals Co Ltd | Method for polishing semiconductor wafer |
| CN103100964A (en) * | 2011-11-11 | 2013-05-15 | 中芯国际集成电路制造(上海)有限公司 | Metal grinding protecting device, metal grinding protecting method and chemical machinery grinding system |
| CN105619239A (en) * | 2016-02-26 | 2016-06-01 | 上海华力微电子有限公司 | Scratching-preventing chemical mechanical grinding device and chemical mechanical grinding method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114211317A (en) * | 2021-12-24 | 2022-03-22 | 滁州钰顺企业管理咨询合伙企业(有限合伙) | Method for reducing wear of grinding wheel |
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