CN214327882U - Gas path transmission system suitable for process for preparing oxide layer by PECVD (plasma enhanced chemical vapor deposition) equipment - Google Patents
Gas path transmission system suitable for process for preparing oxide layer by PECVD (plasma enhanced chemical vapor deposition) equipment Download PDFInfo
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- CN214327882U CN214327882U CN202120111015.0U CN202120111015U CN214327882U CN 214327882 U CN214327882 U CN 214327882U CN 202120111015 U CN202120111015 U CN 202120111015U CN 214327882 U CN214327882 U CN 214327882U
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Abstract
A gas path transmission system suitable for a process for preparing an oxide layer by PECVD equipment belongs to the technical field of process equipment for preparing the oxide layer by tubular PECVD equipment. Specifically speaking, the utility model provides a can be on the deposition base member chemisorption and reaction form the deposit membrane to can prepare the gas circuit transmission system who is applicable to PECVD equipment preparation oxide layer technology of thin and homogeneity, oxidation layer membrane that the uniformity is good. The utility model is characterized in that: the special gas circuit comprises a source pipeline, a first pipeline, a second pipeline, a nitrogen pipeline and an oxygen pipeline. The gas source gas circuit comprises a nitrogen gas source, an oxygen gas source and an argon gas source. The nitrogen source is connected with the reaction cavity through a nitrogen pipeline of the special gas path; the oxygen source is connected with the reaction cavity through an oxygen pipeline of the special gas path; the argon gas source is connected with the reaction cavity through a source pipeline of the special gas path, and the tail end of the reaction cavity is provided with a vacuum pump.
Description
Technical Field
The utility model belongs to the technical field of tubular PECVD equipment preparation oxide layer process equipment. More specifically, the utility model relates to a gas circuit transmission system suitable for PECVD equipment preparation oxide layer technology.
Background
The solar cell is a semiconductor device with a light-electricity conversion characteristic, which directly converts solar radiation energy into direct current, and is the most basic unit for photovoltaic electricity collection, in the process of collecting and converting solar energy, sunlight irradiates on a silicon wafer of the solar cell, wherein a part of sunlight can be reflected, even if the silicon surface is designed into a suede surface, although incident light can be reflected for multiple times to increase the light absorption rate, a part of sunlight can be reflected, according to measurement and calculation, the reflection loss rate of light on the silicon surface reaches about 35%, the anti-reflection film can greatly improve the utilization rate of the solar cell to the sunlight, and is beneficial to improving the photo-generated current density, thereby improving the conversion efficiency, and meanwhile, the passivation of hydrogen in the film on the surface of the cell reduces the surface recombination rate of an emitting junction, reduces dark current and improves open-circuit voltage, the photoelectric conversion efficiency is improved; the high temperature flash annealing in the burn-through process breaks some of the Si-H, N-H bonds and the liberated H further enhances the passivation of the cell.
With the development of solar cells, more and more film spreading processes are adopted, and common oxide layer film spreading processes comprise laughing gas oxidation, ozone oxidation and hot oxygen. However, the traditional oxidation process has defects of poor film spreading quality and uniformity, and the thickness of the spread film is required to be larger because of poor uniformity, so that the cost and the quality of the cell are influenced. In view of the above, it is necessary to develop a gas transmission system suitable for the oxide layer preparation process of PECVD equipment to develop a new oxide layer process.
Disclosure of Invention
The utility model discloses just to above-mentioned problem, provide one kind and can be on the deposition base member chemisorption and reaction form the deposit membrane to can prepare the gas circuit transmission system who is applicable to PECVD equipment preparation oxide layer technology of thin and homogeneity, the good oxide layer membrane of uniformity.
In order to realize the above object of the utility model, the utility model discloses a following technical scheme, the utility model discloses a special gas circuit, air supply gas circuit, reaction chamber and liquid source bottle, the reaction chamber afterbody is provided with vacuum pump, its characterized in that:
the special gas path comprises a source pipeline, a first pipeline, a second pipeline, a nitrogen pipeline and an oxygen pipeline.
The gas source gas circuit comprises a nitrogen gas source, an oxygen gas source and an argon gas source.
The nitrogen source is connected with the reaction cavity through a nitrogen pipeline of the special gas path; the oxygen source is connected with the reaction cavity through an oxygen pipeline of the special gas path; the argon gas source is connected with the reaction cavity through a source pipeline of the special gas path, and the tail end of the reaction cavity is provided with a vacuum pump.
The inlet of the first pipeline is connected with the source pipeline, and the outlet of the first pipeline is connected with the liquid source bottle; the inlet of the second pipeline is connected with the liquid source bottle, and the outlet of the second pipeline is connected with the source pipeline; an opening and closing valve is arranged between the connection points of the first pipeline and the source pipeline and the connection points of the second pipeline and the source pipeline; the first pipeline and the second pipeline are also provided with an opening and closing valve.
As a preferable scheme of the utility model, a communicating pipeline with an open/close valve is arranged between the first pipeline and the second pipeline, and the open/close valve is arranged at the front end and the rear end of the connecting point of the communicating pipeline and the first pipeline; the front end and the rear end of the connection point of the communicating pipeline and the second pipeline are both provided with an opening and closing valve; the second pipeline is provided with a branch bypass between the two opening and closing valves, the branch bypass is provided with an opening and closing valve, and the tail end of the branch bypass is connected with the vacuum pump.
The utility model has the advantages that: the utility model discloses a bubbling principle utilizes argon gas to carry out the propelling movement to liquid source liquid steam, can use the open and close valve to nitrogen gas, oxygen, argon gas and carry the source gas and carry out pulse control, through letting in the reaction chamber with gaseous phase precursor pulse in turn, thereby chemisorption and reaction form the oxide film that the preparation is thinner and the homogeneity uniformity is better on the deposition base member.
The utility model discloses a set up branch's bypass, cooperation intercommunication pipeline and vacuum pump can realize that inert gas sweeps to first pipeline, second pipeline and source pipeline, and inert gas does not pass through the reaction chamber, and is efficient, can not influence follow-up process flow.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Figure 2 is an illustration of a manual diaphragm valve.
Figure 3 is an illustration of a pneumatically actuated diaphragm valve.
In the figure, 1 is a special gas path 11, a gas path 12, a liquid source bottle 13, a reaction chamber 14, a vacuum pump 15, a manual diaphragm valve 101, a filter 102, a pressure regulating valve 103, a barometer 104, a flowmeter 105, a pneumatic diaphragm valve 106, a gas pressure sensor 107, a one-way valve 108, a nitrogen gas source 111, an oxygen gas source 112, an argon gas source 113, a source pipeline 121, a first pipeline 122, a second pipeline 123, a nitrogen pipeline 124, an oxygen pipeline 125 and a branch bypass 126.
Detailed Description
The utility model discloses a special gas circuit 11, air supply gas circuit 12, reaction chamber 14 and liquid source bottle 13, 14 afterbody in reaction chamber are provided with vacuum pump 15, its characterized in that:
the special gas circuit 11 includes a source pipe 121, a first pipe 122, a second pipe 123, a nitrogen pipe 124, and an oxygen pipe 125.
The gas source circuit 12 includes a nitrogen gas source 111, an oxygen gas source 112, and an argon gas source 113.
The nitrogen gas source 111 is connected with the reaction chamber 14 through a nitrogen gas pipeline 124 of the special gas path 11; the oxygen gas source 112 is connected with the reaction chamber 14 through an oxygen pipeline 125 of the special gas circuit 11; the argon gas source 113 is connected with the reaction cavity 14 through a source pipeline 121 of the special gas path 11, and the tail end of the reaction cavity 14 is provided with a vacuum pump 15.
The inlet of the first pipeline 122 is connected with the source pipeline 121, and the outlet of the first pipeline 122 is connected with the liquid source bottle 13; the inlet of the second pipeline 123 is connected with the liquid source bottle 13, and the outlet of the second pipeline 123 is connected with the source pipeline 121; an opening and closing valve is provided between the connection points of the first and second pipes 122 and 123 and the source pipe 121; the first pipe 122 and the second pipe 123 are also provided with an opening and closing valve.
As a preferable scheme of the present invention, a communication pipeline having an on-off valve is disposed between the first pipeline 122 and the second pipeline 123, and the on-off valve is disposed at both the front end and the rear end of the connection point of the communication pipeline and the first pipeline 122; the front end and the rear end of the connection point of the communication pipeline and the second pipeline 123 are both provided with an opening and closing valve; the second pipe 123 is provided with a branch bypass 126 between the two opening/closing valves, the branch bypass 126 is provided with an opening/closing valve, and the end of the branch bypass 126 is connected to the vacuum pump 15.
The on-off valve is a pneumatic diaphragm valve 106.
Example (b): the utility model discloses a: an air source air path 11; the special gas path 12 is connected to the gas source path 11; and a liquid source bottle 13 which is also connected to the special gas path 12; and the gas source gas circuit 11 of the reaction chamber 14 comprises a nitrogen gas source 111, an oxygen gas source 112 and an argon gas source 113.
The special gas circuit 12 includes an active pipe 121, a first pipe 122, a second pipe 123, a nitrogen pipe 124, an oxygen pipe 125, and a branch bypass 126.
Each of the nitrogen gas source 111, the oxygen gas source 112 and the argon gas source 113 comprises: a manual diaphragm valve 101, a filter 102, a pressure regulating valve 103, a barometer 104 and a flow meter 105.
Wherein, the connection order is in turn: the air source is connected into a manual diaphragm valve 101, then a filter 102, then a pressure regulating valve 103, then a barometer 104 and a flowmeter 105.
The source pipe 121 includes: a one-way valve 108, a pneumatic diaphragm valve 106, and a flow meter 105.
Wherein, the connection order is in turn: argon gas source 113 is connected to one-way valve 108, then to pneumatic diaphragm valve 106, and then to flow meter 105.
The first duct 122 includes: two pneumatic diaphragm valves 106, a gas pressure sensor 107, and a flow meter 105.
The conduit inlet is connected between the one-way valve 108 of the source conduit 121 and the pneumatic diaphragm valve 106; the outlet of the pipeline is connected with a liquid source bottle 13.
Wherein, the connection order is in turn: a pneumatic diaphragm valve 106 is connected to the source pipeline 121, then connected to the flowmeter 105, and then connected to the pneumatic diaphragm valve 106; a gas pressure sensor 107 is connected after the flow meter 105 before the pneumatic diaphragm valve 106.
The second pipe 123 includes: two pneumatic diaphragm valves 106 and a gas pressure sensor 107.
The pipe inlet is connected to the liquid source bottle 13 and the pipe outlet is connected to the source pipe 121 after the flow meter 105.
Wherein, the connection order is in turn: a pneumatic diaphragm valve 106 is connected from the liquid source bottle 13 and then connected with one pneumatic diaphragm valve 106; a gas pressure sensor 107 is connected between the two diaphragm valves.
The nitrogen line 124 and the oxygen line 125 each include a pneumatic diaphragm valve 106.
The inlets of the two pipelines are respectively connected to the nitrogen gas source 111 and the oxygen gas source 112, and after the outlets converge together, the outlets converge with the source pipeline 121 again to be connected to the inlet of the reaction chamber 14.
The inlet and the outlet of the liquid source bottle 13 are respectively connected with a hand-operated diaphragm valve 101.
The inlet pipeline of the liquid source bottle 13 is inserted below the liquid in the source bottle and close to the bottom of the source bottle, and the outlet is positioned above the liquid level in the liquid source bottle and close to the top of the source bottle.
The branched bypass 126 of the second pipe 123 is connected to the vacuum pump at the outlet of the reaction chamber 14.
Wherein, the inlet of the branch bypass 126 is connected between the two pneumatic diaphragm valves 106 of the second pipeline 123, and the outlet is connected with the outlet of the reaction chamber 14 and is converged into the vacuum pump.
Wherein, the first pipeline 122 and the second pipeline 123 are connected with each other through a communication pipeline with one pneumatic diaphragm valve 106, the inlet of the communication pipeline is positioned behind the flowmeter 105 and in front of the pneumatic diaphragm valve 106, and the outlet of the communication pipeline is positioned between the two pneumatic diaphragm valves 106.
The system uses inert gas to push the precursor gas, meaning that the source line 121 and nitrogen line 124 are always open when the system is in operation.
First, a gas pulse of a first precursor which pushes liquid vapor of a liquid source by argon gas is controlled by a pneumatic diaphragm valve, which means that a first pipeline 122 and a second pipeline 123 are opened to be chemically adsorbed with the surface of a substrate to form a saturated new surface (I).
The first conduit 122 and the second conduit 123 are then controlled to close by means of pneumatic diaphragm valves, and the abatement chamber is purged with an inert gas.
Then, the gas pulse using oxygen as a second precursor is controlled by a pneumatic diaphragm valve, which means that the oxygen pipeline 125 is opened to perform chemical reaction with the surface I to form another new surface II.
Finally, the inert gas is used for purifying and flushing the provincial region through a pneumatic diaphragm valve, which means that the oxygen pipeline 125 is closed, and the provincial region is purified and flushed by the inert gas and is ready to enter the next process cycle.
It should be understood that the above detailed description of the present invention is only for illustrating the present invention and is not limited by the technical solutions described in the embodiments of the present invention, and those skilled in the art should understand that the present invention can still be modified or equivalently replaced to achieve the same technical effects; as long as the use requirement is satisfied, the utility model is within the protection scope.
Claims (2)
1. The utility model provides a gas circuit transmission system suitable for PECVD equipment preparation oxide layer technology, includes special gas circuit, air supply gas circuit, reaction chamber and liquid source bottle, the reaction chamber afterbody is provided with vacuum pump, its characterized in that:
the special gas path comprises a source pipeline, a first pipeline, a second pipeline, a nitrogen pipeline and an oxygen pipeline;
the gas source gas circuit comprises a nitrogen gas source, an oxygen gas source and an argon gas source;
the nitrogen source is connected with the reaction cavity through a nitrogen pipeline of the special gas path; the oxygen source is connected with the reaction cavity through an oxygen pipeline of the special gas path; the argon gas source is connected with the reaction cavity through a source pipeline of the special gas path, and the tail end of the reaction cavity is provided with a vacuum pump;
the inlet of the first pipeline is connected with the source pipeline, and the outlet of the first pipeline is connected with the liquid source bottle; the inlet of the second pipeline is connected with the liquid source bottle, and the outlet of the second pipeline is connected with the source pipeline; an opening and closing valve is arranged between the connection points of the first pipeline and the source pipeline and the connection points of the second pipeline and the source pipeline; the first pipeline and the second pipeline are also provided with an opening and closing valve.
2. The gas path transmission system suitable for the process of preparing the oxide layer by the PECVD equipment as recited in claim 1, wherein: a communicating pipeline with an opening and closing valve is arranged between the first pipeline and the second pipeline, and the opening and closing valve is arranged at the front end and the rear end of the connecting point of the communicating pipeline and the first pipeline; the front end and the rear end of the connection point of the communicating pipeline and the second pipeline are both provided with an opening and closing valve; the second pipeline is provided with a branch bypass between the two opening and closing valves, the branch bypass is provided with an opening and closing valve, and the tail end of the branch bypass is connected with the vacuum pump.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120111015.0U CN214327882U (en) | 2021-01-15 | 2021-01-15 | Gas path transmission system suitable for process for preparing oxide layer by PECVD (plasma enhanced chemical vapor deposition) equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120111015.0U CN214327882U (en) | 2021-01-15 | 2021-01-15 | Gas path transmission system suitable for process for preparing oxide layer by PECVD (plasma enhanced chemical vapor deposition) equipment |
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| CN214327882U true CN214327882U (en) | 2021-10-01 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116575014A (en) * | 2023-05-10 | 2023-08-11 | 上海良薇机电工程有限公司 | Bubbling device, liquid source bubbling system, method and semiconductor process system |
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2021
- 2021-01-15 CN CN202120111015.0U patent/CN214327882U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116575014A (en) * | 2023-05-10 | 2023-08-11 | 上海良薇机电工程有限公司 | Bubbling device, liquid source bubbling system, method and semiconductor process system |
| CN116575014B (en) * | 2023-05-10 | 2024-02-27 | 上海良薇机电工程有限公司 | Bubbling device, liquid source bubbling system, method and semiconductor process system |
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