CN214327876U - Normal pressure chemical vapor deposition equipment - Google Patents
Normal pressure chemical vapor deposition equipment Download PDFInfo
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- CN214327876U CN214327876U CN202023214794.1U CN202023214794U CN214327876U CN 214327876 U CN214327876 U CN 214327876U CN 202023214794 U CN202023214794 U CN 202023214794U CN 214327876 U CN214327876 U CN 214327876U
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- chemical vapor
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Abstract
The utility model discloses a normal pressure chemical vapor deposition device, which relates to the technical field of normal pressure chemical vapor deposition and comprises an air inlet box, a diffusion head, a heating body component, a cross arm, a turntable, a manipulator, a loading and carrying platform, a wafer skip car, a fan filter unit and a vacuum system; the fan filter unit is arranged above the loading carrying platform; the manipulator is arranged between the loading and carrying platform and the rotary table; the cross arm is slidably arranged on one side of the rotary table, which is far away from the manipulator, and the heating body assembly is arranged above the cross arm; the diffusion head is arranged right below the heating body assembly, and the air inlet box is communicated with the diffusion head; the vacuum system is used for providing a vacuum environment for the manipulator and the heating body assembly. The utility model provides a normal pressure chemical vapor deposition equipment can the multiple film of normal pressure chemical vapor deposition to can effectively improve equipment integration level, reduce the automation degree of difficulty, reduce area, improve equipment productivity.
Description
Technical Field
The utility model relates to an ordinary pressure chemical deposition technical field especially relates to an ordinary pressure chemical vapor deposition equipment.
Background
APCVD, atmospheric pressure chemical vapor deposition, refers to a method of chemical vapor deposition performed at atmospheric pressure, which was originally used for chemical vapor deposition. The system required by the process is simple, the reaction speed is high, but the uniformity is poor, the step coverage capability is poor, and therefore the process is generally used for thick medium deposition.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model provides a normal pressure chemical vapor deposition equipment to improve the homogeneity of deposit film.
In order to achieve the above object, the utility model provides a following scheme:
the utility model provides a normal pressure chemical vapor deposition device, which comprises an air inlet box, a diffusion head, a heating body component, a cross arm, a rotary table, a mechanical arm, a loading and carrying platform, a wafer skip car, a fan filter unit and a vacuum system; the fan filter unit is arranged above the loading carrying platform; the manipulator is arranged between the loading and carrying platform and the rotary table; the cross arm is slidably arranged on one side of the rotary table, which is far away from the manipulator, and the heating body is arranged above the cross arm; the diffusion head is arranged right below the heating body assembly, and the air inlet box is communicated with the diffusion head; the air inlet box is also communicated with the heating body assembly; the vacuum system is used for providing a vacuum environment for the manipulator and the heating body assembly.
Optionally, the robot comprises a chuck clamp for transferring wafers between the loading platform and the turntable.
Optionally, the turntable comprises two supporting plates which are symmetrically arranged, and the two supporting plates rotate around an intermediate shaft of the turntable.
Optionally, a wafer skip car is arranged at the bottom of the supporting plate, on the side of the turntable, which is close to the heating body, and the wafer skip car is used for lifting the wafer on the supporting plate.
Optionally, an adsorption port is arranged at the bottom of the heating body assembly, the adsorption port is communicated with the vacuum system, and the adsorption port is communicated with the air inlet box.
Optionally, a non-metal gasket is arranged at the adsorption port.
Optionally, the diffusion head is communicated with a cooling water pipeline.
Optionally, a plurality of magazines are provided on the charge carrier platform.
Optionally, the heating range of the heating body assembly is room temperature to 1300 ℃.
The utility model discloses for prior art gain following technological effect:
the utility model provides a normal pressure chemical vapor deposition equipment can the multiple film of normal pressure chemical vapor deposition to can effectively improve equipment integration level, reduce the automation degree of difficulty, reduce area, improve equipment productivity.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a side view of a wafer in a wafer deposition state according to an embodiment of the present invention;
fig. 2 is a top view of a wafer in a deposition state according to an embodiment of the present invention;
fig. 3 is a side view of an embodiment of the present invention in a complete deposition wafer unload state or a wait deposition wafer installation state.
Description of reference numerals: 1. an air intake box; 2. a heating body assembly; 3. a cross arm; 4. a diffusion head; 5. a turntable; 6. a wafer skip car; 7. a cooling water inlet pipe; 8. a cooling water outlet pipe; 9. an exhaust duct; 10. an exhaust valve; 11. a dry pump; 12. a manipulator; 131. a first magazine; 132. a second magazine; 14. a carrying platform; 15. a wafer; 16. a first electric sliding table; 17. a second electric sliding table; 18. a linear guide rail; 19. fan filter unit.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
As shown in fig. 1, the embodiment provides an atmospheric pressure chemical vapor deposition apparatus, which includes an air inlet box 1, a diffusion head 4, a heating body assembly 2, a cross arm 3, a turntable 5, a manipulator 12, a loading carrying platform 14, a fan filter unit 19, a frame and a vacuum system; the fan filter unit 19 is arranged above the loading carrying platform 14; the manipulator 12 is arranged between the loading carrying platform 14 and the turntable 5; the cross arm 3 is slidably arranged on one side of the rotary table 5 far away from the manipulator 12, and the heating body assembly 2 is arranged above the cross arm 3; the diffusion head 4 is arranged right below the heating body assembly 2, and the air inlet box 1 is communicated with the diffusion head 4; the air inlet box 1 is also communicated with a heating body assembly 2; the vacuum system is used to provide a vacuum environment for the robot arm 12 and the heating body assembly 2.
In this embodiment, the carrying platform 14 is provided with a first magazine 131 and a second magazine 132, and the first magazine 131 and the second magazine 132 are used for holding the wafers 15 to be deposited or holding the wafers 15 already deposited.
The manipulator 12 is a three-axis or above-three-axis manipulator, a sucker clamp is arranged at the motion tail end, and a vacuum system provides a vacuum environment for the sucker clamp. The chuck clamp can move to the standard space range specified by the manipulator through the positioning of the manipulator, and can suck, grab or place the wafer 1 from the first magazine 131, the second magazine 132 and the tray of the turntable 5 on the side close to the manipulator.
Two supporting plates are symmetrically arranged on two sides of the central shaft of the turntable 5, and the supporting plates comprise quartz supporting pieces, so that the wafer 15 can be prevented from being directly contacted with metal and being polluted.
Be provided with a wafer skip 6 under the layer board that revolving stage 5 is close to heating body subassembly 2 one side, wafer skip 6 includes the electronic slip table 17 of second, be provided with a connecting rod on the slider of the electronic slip table 17 of second, the connecting rod top is provided with the tray that contains the quartzy material supporting pad, this tray is located revolving stage 5 and is close to under the layer board of heating body subassembly 2 one side, the electronic slip table 17 drive tray of accessible second rises and falls, make it pass the layer board that revolving stage 5 is close to heating body subassembly 2 one side, lift wafer 15 from the layer board to heating body subassembly 2 bottom surface and adsorb fixedly, or from heating body subassembly 2 on the bearing to the layer board.
The turntable 5 also has the function of cooling the wafer 15, because the temperature of the wafer 15 is higher in the process of depositing the film, the temperature of the wafer 15 after depositing the film is still higher, when the wafer 15 is deposited and placed on the supporting plate of the turntable 5, the wafer 15 can be naturally cooled in the air or a cooling fan is additionally arranged to forcibly cool the wafer 15.
The heating body assembly 2 comprises an adsorption port communicated with the vacuum system and the air inlet box 1, and the part of the adsorption port, which is in contact with the wafer 15, is a non-metal gasket, in the embodiment, the non-metal gasket is made of non-metal materials such as SiC and the like, so that the wafer 15 is prevented from being polluted by metal, and the wafer 15 can be corrected in a vacuum adsorption fixing mode.
The heater 2 can heat the wafer 15 to 1300 ℃ and the normal use temperature is 450 ℃.
The cross arm 3 comprises a first electric sliding table 16 and a linear guide rail 18 which are arranged in parallel, and the diffusion head 4 and the rotary table 5 are arranged between the first electric sliding table 16 and the linear guide rail 18; one end of the cross arm 3 is arranged on a sliding block of the first electric sliding table 16, the other end of the cross arm is arranged on the linear guide rail 18 in a sliding mode, and the cross arm 3 drives the heating body assembly 2 to move linearly through driving of the first electric sliding table 16.
The diffusion head 4 is communicated with the cooling water inlet pipe 7 and the cooling water outlet pipe 8 to realize the flow of cooling water, so that the diffusion head 4 is cooled, and the film quality is prevented from being influenced by the overhigh temperature of the diffusion head 4 in the film deposition process.
The vacuum system includes a dry pump and an on-off valve, which are communicated with each other through a pipe. The vacuum system is used for providing vacuum suction for the suction port of the sucker clamp box heating body assembly 2 of the manipulator 12.
The fan filter unit 19 provides clean air to the entire apparatus and places the entire apparatus in an environment slightly above atmospheric pressure.
The operation flow of the atmospheric pressure chemical vapor deposition equipment in the embodiment is as follows:
a, the manipulator 12 adsorbs a wafer 15 needing to deposit a film from the first material box 131;
b, the mechanical arm 12 transfers the wafer 15 needing to deposit the film to one side of the turntable 5 close to the mechanical arm;
c. the turntable 5 rotates 180 degrees, the wafer 15 needing to deposit the film is transferred to one side of the turntable 5 close to the heating body assembly 2, and the manipulator 12 transfers another wafer 15 needing to deposit the film from the first material box 131 to one side of the turntable 5 close to the manipulator;
d, the cross arm 3 drives the upper heating body assembly 2 to move to a position right above the wafer skip car 6 and is concentric with the left supporting plate of the turntable 5;
e. the wafer skip car 6 moves upwards, and the wafer 15 needing to deposit the film on the supporting plate on one side of the turntable 5 close to the heating body is lifted to the bottom surface of the heating body component 2;
f. the dry pump 11 provides a vacuum environment, and controls the on-off of the vacuum-pumping pipeline through an on-off valve, so as to provide the vacuum environment for the heating body assembly 2, and the heating body assembly 2 adsorbs the wafer 15 needing to deposit the film;
g. the wafer skip car 6 moves downwards and returns to the initial position, and then the cross arm 3 drives the upper heating body assembly 2 to return to the position right above the initial diffusion head 4;
h. the heating body assembly 2 starts to heat;
i. the gas inlet box 1 starts to provide necessary process gas for the diffusion head 4;
j. the diffusion head 4 starts to spray process gas on one side of the wafer 15 needing to deposit the film, and the wafer 15 starts to deposit the film;
k. after the deposition is completed, the gas inlet box 1 stops the supply of the process gas;
l, the cross arm 3 drives the upper heating body assembly 2 to move to a position right above the wafer material trolley 6, the position is concentric with a tray on one side of the turntable 5 close to the heating body assembly 2, and the wafer material trolley 6 moves upwards until contacting or approaching a wafer 15 which finishes film deposition;
m, closing a shut-off valve in the vacuum system, and inflating through an air inlet box to ensure that the adsorption force of the heating body assembly 2 is invalid, so as to finish the separation of the wafer 15 deposited by the film from the heating body 2;
n, the wafer skip car 6 moves downwards to transfer the wafer 15 which finishes the film deposition to a supporting plate on one side of the turntable 5 close to the heating body component 2;
rotating the turntable 5 by 180 degrees, transferring the wafer 15 on which the film deposition is finished to the right side of the turntable 5, rotating the other wafer 15 on which the film deposition is required to the left side of the turntable 5, and repeating the step e-n;
p, the robot 12 transfers the wafer 15 with the film deposition completed to the vacant positions of the first magazine 131 and the second magazine 132, so as to complete the film deposition of one wafer 15.
It should be noted that, as is obvious to a person skilled in the art, the invention is not limited to details of the above-described exemplary embodiments, but can be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
The principle and the implementation mode of the present invention are explained by applying specific examples in the present specification, and the above descriptions of the examples are only used to help understanding the method and the core idea of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the concrete implementation and the application scope. In summary, the content of the present specification should not be construed as a limitation of the present invention.
Claims (9)
1. The atmospheric pressure chemical vapor deposition equipment is characterized by comprising an air inlet box, a diffusion head, a heating body assembly, a cross arm, a rotary table, a mechanical arm, a loading and carrying platform, a wafer skip car, a fan filter unit and a vacuum system; the fan filter unit is arranged above the loading carrying platform; the manipulator is arranged between the loading and carrying platform and the rotary table; the cross arm is slidably arranged on one side of the rotary table, which is far away from the manipulator, and the heating body is arranged above the cross arm; the diffusion head is arranged right below the heating body assembly, and the air inlet box is communicated with the diffusion head; the air inlet box is also communicated with the heating body assembly; the vacuum system is used for providing a vacuum environment for the manipulator and the heating body assembly.
2. An atmospheric pressure chemical vapor deposition apparatus as recited in claim 1, wherein the robot includes a chuck clamp for transferring wafers between the load carrier platform and the turntable.
3. The atmospheric-pressure chemical vapor deposition apparatus according to claim 1, wherein the turntable includes two pallets symmetrically disposed, the two pallets rotating about an intermediate axis of the turntable.
4. An atmospheric pressure chemical vapor deposition apparatus according to claim 3, wherein a wafer trolley is disposed at a bottom of the supporting plate on a side of the turntable close to the heating body, and the wafer trolley is used for lifting the wafer on the supporting plate.
5. The atmospheric-pressure chemical vapor deposition apparatus according to claim 1, wherein an adsorption port is disposed at a bottom of the heating body assembly, the adsorption port is communicated with the vacuum system, and the adsorption port is communicated with the air inlet box.
6. An atmospheric pressure chemical vapor deposition apparatus as recited in claim 5, wherein a non-metallic gasket is disposed at the adsorption port.
7. The atmospheric pressure chemical vapor deposition apparatus according to claim 1, wherein the diffusion head is in communication with a cooling water line.
8. An atmospheric pressure chemical vapor deposition apparatus according to claim 1, wherein a plurality of magazines are provided on the load carrier platform.
9. The atmospheric-pressure chemical vapor deposition apparatus according to claim 1, wherein the heating body assembly is heated in a range of room temperature to 1300 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023214794.1U CN214327876U (en) | 2020-12-28 | 2020-12-28 | Normal pressure chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023214794.1U CN214327876U (en) | 2020-12-28 | 2020-12-28 | Normal pressure chemical vapor deposition equipment |
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| CN214327876U true CN214327876U (en) | 2021-10-01 |
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| CN202023214794.1U Active CN214327876U (en) | 2020-12-28 | 2020-12-28 | Normal pressure chemical vapor deposition equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112522681A (en) * | 2020-12-28 | 2021-03-19 | 宁波恒普真空技术有限公司 | Normal pressure chemical vapor deposition equipment |
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- 2020-12-28 CN CN202023214794.1U patent/CN214327876U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112522681A (en) * | 2020-12-28 | 2021-03-19 | 宁波恒普真空技术有限公司 | Normal pressure chemical vapor deposition equipment |
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Address after: No. 365, Xinxing 1st Road, Cixi hi tech Industrial Development Zone, Ningbo City, Zhejiang Province, 315300 Patentee after: Ningbo Hengpu Technology Co.,Ltd. Address before: No. 365, Xinxing 1st Road, Cixi hi tech Industrial Development Zone, Ningbo City, Zhejiang Province, 315300 Patentee before: Ningbo Hengpu Vacuum Technology Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |