CN114197056A - Semiconductor material annealing device and annealing method - Google Patents
Semiconductor material annealing device and annealing method Download PDFInfo
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- CN114197056A CN114197056A CN202210044062.7A CN202210044062A CN114197056A CN 114197056 A CN114197056 A CN 114197056A CN 202210044062 A CN202210044062 A CN 202210044062A CN 114197056 A CN114197056 A CN 114197056A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000010438 heat treatment Methods 0.000 claims abstract description 227
- 238000001816 cooling Methods 0.000 claims abstract description 96
- 238000012546 transfer Methods 0.000 claims abstract description 71
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Abstract
The invention discloses a semiconductor material annealing device and an annealing method, which relate to the technical field of semiconductor manufacturing, wherein the semiconductor material annealing device comprises: the transfer chamber is internally provided with a sample carrying table and is movably provided with a sample conveying device; the first heating chamber is communicated with the transfer chamber; the second heating chamber is communicated with the transfer chamber; the cooling chamber is communicated with the transfer chamber; and the rotary lifting mechanism is connected with the sample carrying platform and is used for driving the sample carrying platform and carrying the sample to be switched among the first heating chamber, the second heating chamber and the cooling chamber. The annealing device not only can realize continuous heating, need not to carry out repeated intensification cooling operation, effectively reduces the working process energy consumption and improves annealing efficiency, and every room both can the cooperation work, also can work alone, has further reduced manufacturing cost.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor material annealing device and an annealing method.
Background
In the semiconductor industry, heat treatment of semiconductor materials is indispensable, and the main purposes of the heat treatment are to release internal stress, increase the ductility of the materials, reduce deformation and crack tendency, and simultaneously, change the crystal phase structure of the surface or the interior of the semiconductor materials, eliminate defects and the like, and obtain the required specific properties. In practical production, annealing is one of the most common means in the heat treatment process of semiconductor materials.
Currently available annealing apparatuses generally include two chambers, i.e., a heating chamber and a cooling chamber; the heating chamber is used for heating and heating the semiconductor material and preserving heat for specific time to carry out annealing treatment, the cooling chamber is used for cooling the semiconductor material after the annealing treatment, and the position of the two chambers is changed by the conveying device. However, when the conventional annealing device is used for annealing, each working process can only anneal a limited number of units of semiconductor materials, and each working process needs to be subjected to multiple temperature rise and drop operations, so that the whole annealing device consumes more energy and has lower annealing efficiency in use.
Disclosure of Invention
1. Technical problem to be solved by the invention
The invention provides a semiconductor material annealing device and an annealing method, aiming at the technical problems of more energy consumption and lower annealing efficiency caused by multiple temperature rising and reducing operations when the existing annealing device is used.
2. Technical scheme
In order to solve the problems, the technical scheme provided by the invention is as follows:
an apparatus for annealing semiconductor material, comprising: the sample transfer chamber is internally provided with a sample carrying table, and is movably provided with a sample conveying device which is used for placing and moving out a sample on the sample carrying table; a first heating chamber in communication with the transfer chamber, the first heating chamber for pyrolysis treatment of a sample; the second heating chamber is communicated with the transfer chamber and is used for carrying out annealing treatment on the sample; a cooling chamber communicated with the transfer chamber, wherein the cooling chamber is used for cooling the sample processed by the first heating chamber or the second heating chamber; and the rotary lifting mechanism is connected with the sample carrying platform and is used for driving the sample carrying platform to carry samples to be switched among the first heating chamber, the second heating chamber and the cooling chamber.
In the application, a sample is placed on a sample carrying table in a transfer chamber through a sample conveying device, at the moment, a rotary lifting mechanism is started to rotate and lift, and the sample carrying table is connected with the rotary lifting mechanism, so that the sample carrying table is driven by the rotary lifting mechanism to carry out low-temperature heating and pyrolysis treatment by driving the sample to enter a first heating chamber from the transfer chamber; after pyrolysis is finished, the rotary lifting mechanism transfers the sample in the first heating chamber into the second heating chamber for high-temperature heating and annealing treatment; after the annealing is finished, transferring the sample into the first heating chamber again through the rotary lifting mechanism to remove the carbon film on the surface of the sample; and finally, transferring the sample to a cooling chamber for cooling treatment, and removing the cooled sample from the transfer chamber through a sample conveying device. The above steps may then be repeated for the next sample annealing process. Meanwhile, in the present application, each chamber may be operated independently, and if the first heating chamber is used as a muffle furnace, low-temperature heating processing is performed. Therefore, compared with the existing annealing device, the annealing device can realize continuous heating, does not need repeated heating and cooling operation, effectively reduces the energy consumption of the working process and improves the annealing efficiency, can work in a matched mode in each chamber, can work independently, and further reduces the cost.
Optionally, centers of the first heating chamber, the second heating chamber and the cooling chamber are projected onto the same plane, and centers of the first heating chamber, the second heating chamber and the cooling chamber are uniformly distributed in a concentric circle manner.
Optionally, the rotary lifting mechanism includes a vertical supporting structure and a horizontal supporting structure, the vertical supporting structure is vertically connected with the horizontal supporting structure, the vertical supporting structure is located at the circle center position of the concentric circle between the centers of the first heating chamber, the second heating chamber and the cooling chamber, the sample carrying platform is located on the horizontal supporting structure, and the position of the sample carrying platform on the horizontal supporting structure corresponds to the center of the first heating chamber, the second heating chamber and the cooling chamber.
Optionally, a partition plate valve is arranged between the first heating chamber and the transfer chamber, a partition plate valve is arranged between the second heating chamber and the transfer chamber, and a partition plate valve is arranged between the cooling chamber and the transfer chamber.
Optionally, the heating device further comprises a plasma generator, and the plasma generator is arranged on each of the first heating chamber and the second heating chamber.
Optionally, the cooling chamber is located on the same side as the sample transport device, and the sample transport device is located above the cooling chamber.
Optionally, the transfer chamber, the first heating chamber, the second heating chamber and the cooling chamber are all communicated with the vacuum-pumping device.
Optionally, the heating device further comprises a first gas supply device, and the first gas supply device is used for supplying protective gas to the first heating chamber and the second heating chamber.
Optionally, the heating system further comprises a second gas supply device, wherein the second gas supply device is used for supplying reaction atmosphere to the first heating chamber and the second heating chamber.
Meanwhile, the application also provides a semiconductor material annealing method, which is realized by the annealing device and comprises the following steps:
s1, conveying the sample to be processed into a first heating chamber through a rotary lifting mechanism for pyrolysis treatment;
s2, transferring the sample processed in the step S1 from the first heating chamber to the second heating chamber through a rotary lifting mechanism to carry out annealing treatment;
s3, transferring the sample processed in the step S2 from the second heating chamber into the first heating chamber through a rotary lifting mechanism, and heating to remove the carbon film on the surface of the sample;
and S4, transferring the sample processed in the step S3 from the first heating chamber into a cooling chamber through a rotary lifting mechanism for cooling treatment, and after cooling is finished, moving the sample out of the transfer chamber.
3. Advantageous effects
Compared with the prior art, the technical scheme provided by the invention has the following beneficial effects:
(1) the semiconductor material annealing device is simple in structure, a sample is placed on the sample carrying table in the transfer chamber through the sample conveying device, at the moment, the rotary lifting mechanism is started to rotate and lift, and the sample carrying table is connected with the rotary lifting mechanism, so that the sample carrying table is driven by the rotary lifting mechanism to carry out low-temperature heating and pyrolysis treatment on the sample entering the first heating chamber from the transfer chamber; after pyrolysis is finished, the rotary lifting mechanism transfers the sample in the first heating chamber into the second heating chamber for high-temperature heating and annealing treatment; after the annealing is finished, transferring the sample into the first heating chamber again through the rotary lifting mechanism to remove the carbon film on the surface of the sample; and finally, transferring the sample to a cooling chamber for cooling treatment, and removing the cooled sample from the transfer chamber through a sample conveying device. Thereafter, the above steps may be repeated to continue the annealing process for the next sample. Meanwhile, in the present application, each chamber may be operated independently, and if the first heating chamber is used as a muffle furnace, low-temperature heating processing is performed. Therefore, compared with the existing annealing device, the annealing device can realize continuous heating, does not need repeated heating and cooling operation, effectively reduces the energy consumption of the working process and improves the annealing efficiency, can work in a matched mode in each chamber, can work independently, and further reduces the cost.
(2) According to the semiconductor material annealing device provided by the embodiment of the application, the centers of the first heating chamber, the second heating chamber and the cooling chamber are arranged to be projected onto the same plane, and the centers of the first heating chamber, the second heating chamber and the cooling chamber are uniformly distributed in a concentric circle mode, so that the rotating angle of the rotary lifting mechanism between every two adjacent chambers can be fixed to be 120 degrees, the accuracy of rotary positioning of the rotary lifting mechanism is ensured, and the positioning error is reduced; and the arrangement ensures that a certain effective interval is kept between the chambers, thereby effectively avoiding the mutual interference of the processes of the chambers.
(3) The semiconductor material annealing device provided by the embodiment of the application has the advantages that through the arrangement of the vertical supporting structure and the horizontal supporting structure, the vertical support structure may be used as a center of a circle, the horizontal support structure may be used as an extension distance between the center of the circle and the centers of the first heating chamber, the second heating chamber and the cooling chamber, the centers of the first heating chamber, the second heating chamber and the cooling chamber are projected on the same plane and are uniformly distributed in a concentric circle mode, the arrangement can ensure that the vertical supporting structure can rotate 120 degrees under the rotation action to realize the transfer of the sample on the sample loading platform of the horizontal supporting structure between the adjacent chambers, and the position of the sample rotated to each chamber just corresponds to the center in each chamber, then, the samples on the sample carrying platforms are placed in corresponding chambers through lifting, the processing effect of the samples in each chamber is guaranteed, and the whole annealing effect is further improved.
(4) According to the semiconductor material annealing device provided by the embodiment of the application, the first heating chamber, the second heating chamber, the cooling chamber and the transfer chamber can be communicated and separated by arranging the partition plate valve (not shown in the figure), so that the cooperation work among all the chambers can be ensured, the independent work of all the chambers can be ensured, and the mutual influence of processes among all the chambers can be avoided.
(5) The embodiment of the application provides a semiconductor material annealing device, through setting up the cooling chamber with sample conveyer is located same one side, just sample conveyer is located the top of cooling chamber when rotatory elevating system drives and carries the appearance platform and shift to the cooling chamber top, and the sample conveyer of being convenient for will carry the quick cooling of putting into of the sample bench in the cooling chamber, and the back is accomplished in the cooling, can be quick with the sample follow the cooling chamber in shift out, further improves annealing efficiency.
(6) According to the semiconductor material annealing device provided by the embodiment of the application, the vacuumizing device is arranged for providing a vacuum environment for the transfer chamber, the first heating chamber, the second heating chamber and the cooling chamber, so that the cleanness of the interior of the whole annealing device can be ensured, and the explosion caused by the high-temperature oxidation of the reaction atmosphere (such as process gas CH4 and the like) introduced into the first heating chamber and the second heating chamber subsequently can be prevented; meanwhile, the first gas supply device is arranged, so that the whole annealing device is filled with protective gas, and the sample can be effectively prevented from being oxidized in the annealing process.
(7) According to the semiconductor material annealing device provided by the embodiment of the application, the second gas supply device is arranged, and the reaction atmosphere is filled into the corresponding heating chamber, so that a sample can be subjected to pyrolysis reaction in the first heating chamber, a carbon film is formed on the surface of the sample, annealing treatment is performed in the second heating chamber, and the annealing efficiency is further improved.
(8) According to the semiconductor material annealing method provided by the embodiment of the application, the temperatures in the first heating chamber and the second heating chamber are required to be increased to the corresponding target temperatures only when the annealing treatment is carried out for the first time, the annealing treatment process does not need to be carried out for a long time, only the target temperatures need to be finely adjusted according to actual requirements, the operation that the temperature of the existing annealing device needs to be frequently increased and decreased is avoided, the energy consumption is reduced, and the working efficiency is improved. In a word, the annealing method can effectively shorten the annealing treatment time, improve the annealing treatment efficiency and improve the energy utilization rate of the annealing treatment.
Drawings
Fig. 1 is a structural frame diagram of an annealing apparatus for semiconductor material according to an embodiment of the present invention.
Fig. 2 is a top view of a semiconductor material annealing apparatus according to an embodiment of the present invention, wherein the first heating chamber, the second heating chamber, the cooling chamber, and the rotary elevating mechanism are disposed therebetween.
Detailed Description
For a further understanding of the present invention, reference will now be made in detail to the embodiments illustrated in the drawings.
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and not restrictive of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings. The terms first, second, and the like in the present invention are provided for convenience of describing the technical solution of the present invention, and have no specific limiting effect, but are all generic terms, and do not limit the technical solution of the present invention. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are intended to be inclusive and mean, for example, that they may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1
With reference to fig. 1-2, the present embodiment provides an annealing apparatus for semiconductor material, comprising: the sample transfer device comprises a transfer chamber 1, wherein a sample carrying table 3 is arranged in the transfer chamber 1, a sample conveying device 2 is movably arranged on the transfer chamber 1, and the sample conveying device 2 is used for placing and moving out a sample 9 on the sample carrying table 3; a first heating chamber 4, the first heating chamber 4 being in communication with the transfer chamber 1, the first heating chamber 4 being for performing pyrolysis treatment on a sample 9; a second heating chamber 5, wherein the second heating chamber 5 is communicated with the transfer chamber 1, and the second heating chamber 5 is used for annealing a sample 9; a cooling chamber 6, wherein the cooling chamber 6 is communicated with the transfer chamber 1, and the cooling chamber 6 is used for cooling the sample 9 processed by the first heating chamber 4 or the second heating chamber 5; and the rotary lifting mechanism is connected with the sample carrying platform 3 and is used for driving the sample carrying platform 3 to carry the sample 9 to be switched among the first heating chamber 4, the second heating chamber 5 and the cooling chamber 6.
In the application, a sample 9 is placed on a sample carrying platform 3 in a transfer chamber 1 through a sample conveying device 2, at the moment, a rotary lifting mechanism is started to rotate and lift, and the sample carrying platform 3 is connected with the rotary lifting mechanism, so that the sample carrying platform 3 is driven by the rotary lifting mechanism to carry out low-temperature heating and pyrolysis treatment on the sample 9 entering a first heating chamber 4 from the transfer chamber 1; after pyrolysis is finished, the rotary lifting mechanism transfers the sample 9 in the first heating chamber 4 into the second heating chamber 5 for high-temperature heating and annealing treatment; after the annealing is finished, transferring the sample 9 into the first heating chamber 4 again through the rotary lifting mechanism to remove the carbon film on the surface of the sample 9; finally, the sample 9 is transferred to the cooling chamber 6 for cooling treatment, and the cooled sample 9 is removed from the transfer chamber 1 by the sample transfer device 2. Thereafter, the above steps may be repeated to continue the annealing process for the next sample. Meanwhile, in the present application, each chamber may be operated independently, and for example, the first heating chamber 4 may be used as a muffle furnace to perform a low-temperature heating process. Therefore, compared with the existing annealing device, the annealing device can realize continuous heating, does not need repeated heating and cooling operation, effectively reduces the energy consumption of the working process and improves the annealing efficiency, can work in a matched mode in each chamber, can work independently, and further reduces the cost.
In practice, the sample transfer device 2 is a sample transfer rod. In practical applications, heating devices are disposed in both the first heating chamber 4 and the second heating chamber 5. In practical application, the lifting device further comprises a driving mechanism, and the driving mechanism is used for driving the rotary lifting mechanism to rotate and lift. In practical application, the annealing device also comprises a control system which is used for controlling the operation of each part in the whole annealing device.
In practical application, the cooling chamber 6 is arranged in the transfer chamber 1, and the refrigerant 10 is arranged in the cooling chamber 6, so that the whole device is more compact, and the occupied space is reduced; at the same time, a refrigerant 10 was provided for cooling of the sample 9.
In practical application, the temperature of the first heating chamber 4 is lower than that of the second heating chamber 5, and the heating temperature in the first heating chamber 4 is 300-1200 ℃; the heating temperature in the second heating chamber 5 is 600-2500 ℃.
In practice, sample 9 can be a SiC wafer or ingot.
Example 2
With reference to fig. 2, compared with the technical solution of embodiment 1, the semiconductor material annealing apparatus of this embodiment has the centers of the first heating chamber 4, the second heating chamber 5 and the cooling chamber 6 projected on the same plane, and the centers of the first heating chamber 4, the second heating chamber 5 and the cooling chamber 6 are uniformly distributed in a concentric circle manner.
As shown in fig. 2, when viewed from top to bottom, the centers of the first heating chamber 4, the second heating chamber 5 and the cooling chamber 6 are projected on the same plane and uniformly distributed in a concentric circle manner, so that the rotation angle of the rotary lifting mechanism between every two adjacent chambers can be fixed to 120 °, thereby ensuring the accuracy of the rotary positioning of the rotary lifting mechanism and reducing the positioning error; and the arrangement ensures that a certain effective interval is kept between the chambers, thereby effectively avoiding the mutual interference of the processes of the chambers.
Example 3
With reference to fig. 1-2, compared with the technical solution of embodiment 2, the semiconductor material annealing apparatus of this embodiment, the rotary lifting mechanism includes a vertical supporting structure 7 and a horizontal supporting structure 8, the vertical supporting structure 7 is vertically connected to the horizontal supporting structure 8, the vertical supporting structure 7 is located at a center of a concentric circle between centers of the first heating chamber 4, the second heating chamber 5 and the cooling chamber 6, the sample loading table 3 is located on the horizontal supporting structure 8, and a position of the sample loading table 3 on the horizontal supporting structure 8 corresponds to centers of the first heating chamber 4, the second heating chamber 5 and the cooling chamber 6.
As shown in fig. 2, when viewed from the top down, the extending distance (i.e. radius) from the center of the vertical supporting structure 7 to the center of the first heating chamber 4, the second heating chamber 5 and the cooling chamber 6 is determined by the horizontal supporting structure 8, the centers of the first heating chamber 4, the second heating chamber 5 and the cooling chamber 6 are projected on the same plane and are uniformly distributed in a concentric circle manner, the arrangement can ensure that the vertical supporting structure 7 rotates 120 degrees under the rotation action to realize the transfer of the sample 9 on the sample stage 3 on the horizontal supporting structure 8 between the adjacent chambers, and the position of the sample 9 rotated to each chamber just corresponds to the center in each chamber, then, the samples 9 on the sample carrying platforms 3 are placed in corresponding chambers through lifting, so that the treatment effect of the samples 9 in each chamber is ensured, and the whole annealing effect is further improved. In practice, the vertical support structure 7 and the horizontal support structure 8 are integrally formed. The horizontal support structure 8 is formed by extending the end of the vertical support structure 7 outwards, and the arrangement is convenient for production.
In practical applications, the vertical supporting structure 7 may be a vertical supporting shaft, the horizontal supporting structure 8 may be a horizontal supporting shaft, and the center position of the sample stage 3 on the horizontal supporting shaft corresponds to the center of the first heating chamber 4, the second heating chamber 5 and the cooling chamber 6.
Example 4
In the annealing apparatus for semiconductor material according to the present embodiment, in comparison with the embodiment of embodiment 1, a partition valve is provided between the first heating chamber 4 and the transfer chamber 1, a partition valve is provided between the second heating chamber 5 and the transfer chamber 1, and a partition valve is provided between the cooling chamber 6 and the transfer chamber 1. The first heating chamber 4, the second heating chamber 5 and the cooling chamber 6 can be communicated and separated from the transfer chamber 1 by arranging partition plate valves (not shown in the figure), and particularly, when the first vacuum pumping is carried out, all the partition plate valves are opened, so that the first heating chamber 4, the second heating chamber 6, the cooling chamber 6 and the transfer chamber 1 can be ensured to jointly form a whole through chamber, and the aim of vacuumizing the whole chamber is fulfilled; starting from the next annealing process of the sample, the vacuum degrees of the first heating chamber 4, the second heating chamber 5 and the cooling chamber 6 can be maintained only by closing the partition plate valves, and the subsequent work process can be started only by vacuumizing the transfer chamber 1 after the sample is loaded in the transfer chamber 1. Therefore, the arrangement of the partition plate valve can ensure the cooperation work among all the chambers and also ensure the independent work of all the chambers, and the mutual influence of the processes among all the chambers is avoided.
Example 5
Compared with the technical solution of embodiment 1, the semiconductor material annealing apparatus of this embodiment further includes a plasma generator, and the plasma generator is disposed on each of the first heating chamber 4 and the second heating chamber 5, and a plasma process treatment can be performed on a sample 9 by disposing the plasma generator (not shown in the figure).
In practical application, the first heating chamber 4 and the second heating chamber 5 are communicated with and separated from the corresponding plasma generator through a partition plate valve.
Example 6
In the annealing device for semiconductor material of this embodiment, compared with the solution of embodiment 1, the cooling chamber 6 is located on the same side as the sample transfer device 2, and the sample transfer device 2 is located above the cooling chamber 6. In the practical application, cooling chamber 6 with sample conveyer 2 is located the same one side of transfer chamber 1, and when rotatory elevating system drove year appearance platform 3 and transferred to cooling chamber 2 top, the sample conveyer 2 of being convenient for will carry the sample on the appearance platform 3 quick putting into cooling chamber 6 and cool off, after the cooling is accomplished, can be quick with the sample follow cooling chamber 6 in shift out, then shift out transfer chamber 1, further improve annealing efficiency.
Example 7
Compared with the technical scheme of embodiment 1, the semiconductor material annealing device of the present embodiment further includes a vacuum pumping device, and the transfer chamber 1, the first heating chamber 4, the second heating chamber 5, and the cooling chamber 6 are all communicated with the vacuum pumping device. By providing the vacuum pumping device for providing a vacuum environment for the annealing device formed by the transfer chamber 1, the first heating chamber 4, the second heating chamber 5 and the cooling chamber 6, the cleanness of the interior of the whole annealing device can be ensured, and explosion caused by high-temperature oxidation of the reaction atmosphere (such as CH 4) introduced into the first heating chamber 4 and the second heating chamber 5 subsequently can be prevented.
In practical application, evacuating device includes vacuum pump, bleed-off pipeline, exhaust duct and vacuum detector, bleed-off pipeline's one end is linked together with transfer chamber 1, bleed-off pipeline's the other end with the vacuum pump is connected, exhaust duct with the vacuum pump is connected, be equipped with valve, preceding valve, aperture governing valve and push-pull valve in advance on the bleed-off pipeline, vacuum detector is used for detecting the inside vacuum degree of the annealing device that transfer chamber 1, first heating chamber 4, second heating chamber 5 and cooling chamber 6 constitute. The arrangement is convenient for monitoring and controlling the vacuum degree in the whole annealing device.
Example 8
Compared with the technical solution of embodiment 7, the annealing device for semiconductor materials of this embodiment further includes a first gas supply device, and the first gas supply device is configured to supply shielding gas to the first heating chamber 4 and the second heating chamber 5. In practice, the protective gas is an inert gas, such as argon, and a first gas supply device (not shown) is provided for supplying the protective gas, so as to effectively prevent the sample 9 from being oxidized during the annealing process.
Example 9
Compared with the technical solution of embodiment 7, the annealing device for semiconductor materials of this embodiment further includes a second gas supply device, and the second gas supply device is configured to provide a reaction atmosphere to the first heating chamber 4 and the second heating chamber 5.
In practice, the reaction atmosphere may be N2、H2、CH4、SiH4By arranging the second gas supply device and filling the reaction atmosphere into the corresponding heating chamber, the sample can be subjected to pyrolysis reaction in the first heating chamber 4, a carbon film is formed on the surface of the sample, and annealing treatment is performed in the second heating chamber 5, so that the annealing efficiency is further improved.
In practical application, the second air supply device (not shown in the figure) comprises an air inlet pipe and a plurality of branch pipes, one end of the air inlet pipe is communicated with the first heating chamber 4 or the second heating chamber 5, the other end of the air inlet pipe is respectively communicated with the plurality of branch pipes, each branch pipe is introduced with different types of reaction atmospheres, a control valve and an air mass flow controller are respectively and correspondingly arranged between the air inlet pipe and the plurality of branch pipes, the branch pipes are switched on and off through the switches of the control valves, and then different types of reaction atmospheres can be selected according to actual requirements; meanwhile, the mass and the flow of the reaction atmosphere can be monitored and controlled through the gas mass flow controller, and can be adjusted and controlled according to requirements, so that the annealing efficiency is improved.
Example 10
The annealing method for a semiconductor material according to this embodiment is implemented by the annealing apparatus according to any one of embodiments 1 to 9, and includes the following steps:
s1, conveying the sample to be processed into a first heating chamber through a rotary lifting mechanism for pyrolysis treatment;
s2, transferring the sample processed in the step S1 from the first heating chamber to the second heating chamber through a rotary lifting mechanism to carry out annealing treatment;
s3, transferring the sample processed in the step S2 from the second heating chamber into the first heating chamber through a rotary lifting mechanism, and heating to remove the carbon film on the surface of the sample;
and S4, transferring the sample processed in the step S3 from the first heating chamber into a cooling chamber through a rotary lifting mechanism for cooling treatment, and after cooling is finished, moving the sample out of the transfer chamber.
In the present application, the steps of the semiconductor material annealing method are specifically as follows:
in step S1, specifically, the sample is placed on the sample platform 3 in the transfer chamber 1 by the sample transfer device 2, the rotary lifting mechanism is rotated to place the sample platform 3 right under the first heating chamber 4, the position of the sample on the sample platform 3 is adjusted, and then the rotary lifting mechanism is rotated to lift the sample on the sample platform 3 and place the sample in the first heating chamber 4, and then the sample is stopped; opening all baffle valves in the device, performing vacuum pumping operation inside the annealing device chamber, and introducing protective gas such as Ar when the vacuum degree in the chamber is less than 0.1mbar, wherein the protective gas is mainly used for cleaning the chamber; wherein the introducing speed of the protective gas is 100-900 mL/min, and the air pressure in the first heating chamber 4 is controlled at 500-700 mbar; in practical application, the protective gas is Ar, the ventilation rate is 500mL/min, and the ventilation is carried out until the air pressure in the first heating chamber 4 reaches 600 mbar; then, starting heating, when the vacuum degree in the first heating chamber 4 reaches 5E-6mbar and the temperature in the first heating chamber 4 is heated to 700-1200 ℃, introducing a reaction atmosphere such as CH4, and carrying out a pyrolysis reaction for 3 hours to form a carbon film on the surface of the sample;
in practical application, the heating rate in the first heating chamber 4 is 60 ℃/min, the target temperature is 1100 ℃, the ventilation rate of the process gas is set to be 200mL/min, the process gas is introduced until the air pressure in the first heating chamber 4 reaches 1mbar, and the pyrolysis reaction is carried out for 3 hours; in practical applications, the vacuum-pumping operation needs to be continued during the entire heating process in the first heating chamber 4 to ensure the cleanliness of the first heating chamber 4 and to prevent the process gas such as CH4 from exploding due to high-temperature oxidation.
In step S2, specifically, after the pyrolysis reaction of the sample in the first heating chamber 4 is completed, the rotary lifting mechanism drives the sample carrier 3 to descend to the initial height, and then rotates clockwise by 120 ° to move to a position right below the second heating chamber 5, the rotary lifting mechanism drives the sample carrier 3 to ascend and enter a proper position in the second heating chamber 5 to stop, and the annealing process is started; wherein the temperature in the second heating chamber 5 is 600-2500 ℃; in practical application, the air pressure in the second heating chamber 5 is constant at 1mbar, the heating rate is 100 ℃/min, the target temperature in the second heating chamber 5 is 2100 ℃, and the annealing treatment is carried out for 40min by heat preservation.
In step S3, specifically, after the sample is annealed in the second heating chamber 5, the rotary lifting mechanism drives the sample loading platform 3 to descend to the initial height, then rotates 120 ° counterclockwise to move to the position right below the first heating chamber 4 again, and rises to a proper position in the first heating chamber 4 to stop, and the sample is heated to 600-900 ℃ to remove the carbon film.
In step S4, specifically, after the carbon film on the surface of the sample is removed in the first heating chamber 4, the sample stage 3 is driven by the rotary lifting mechanism to descend to the initial height, and then rotates clockwise by 240 ° to a position right above the cooling chamber, the sample transfer device 2 rapidly transfers the sample into the cooling chamber 6, closes the partition valve, starts the cooling process, and after the sample is cooled in the cooling chamber 6, the sample is removed from the transfer chamber 1 by the sample transfer device 2, and then the steps S1-S4 are repeated to perform the annealing process for the next sample.
Therefore, the annealing method realized by the annealing device provided by the application has the advantages that the temperatures in the first heating chamber and the second heating chamber are required to be increased to the corresponding target temperatures only when the annealing treatment is carried out for the first time, the temperature is not required to be increased or decreased for a long time in the later annealing treatment process, the target temperatures are required to be finely adjusted according to actual requirements, the frequent temperature increasing or decreasing operation of the existing annealing device is avoided, the energy consumption is reduced, and the working efficiency is improved. In a word, the annealing method can effectively shorten the annealing treatment time, improve the annealing treatment efficiency and improve the energy utilization rate of the annealing treatment.
The present invention and its embodiments have been described above schematically, without limitation, and what is shown in the drawings is only one of the embodiments of the present invention, and the actual structure is not limited thereto. Therefore, if the person skilled in the art receives the teaching, without departing from the spirit of the invention, the person skilled in the art shall not inventively design the similar structural modes and embodiments to the technical solution, but shall fall within the scope of the invention.
Claims (10)
1. An apparatus for annealing a semiconductor material, comprising:
the sample transfer chamber is internally provided with a sample carrying table, and is movably provided with a sample conveying device which is used for placing and moving out a sample on the sample carrying table;
a first heating chamber in communication with the transfer chamber, the first heating chamber for pyrolysis treatment of a sample;
the second heating chamber is communicated with the transfer chamber and is used for carrying out annealing treatment on the sample;
a cooling chamber communicated with the transfer chamber, wherein the cooling chamber is used for cooling the sample processed by the first heating chamber or the second heating chamber;
and the rotary lifting mechanism is connected with the sample carrying platform and is used for driving the sample carrying platform to carry samples to be switched among the first heating chamber, the second heating chamber and the cooling chamber.
2. The semiconductor material annealing apparatus according to claim 1, wherein centers of the first heating chamber, the second heating chamber and the cooling chamber are projected on the same plane, and are uniformly distributed in concentric circles among the centers of the first heating chamber, the second heating chamber and the cooling chamber.
3. The semiconductor material annealing device according to claim 2, wherein the rotary lifting mechanism includes a vertical support structure and a horizontal support structure, the vertical support structure is vertically connected to the horizontal support structure, the vertical support structure is located at a center of a concentric circle between centers of the first heating chamber, the second heating chamber and the cooling chamber, the sample stage is located on the horizontal support structure, and a position of the sample stage on the horizontal support structure corresponds to centers of the first heating chamber, the second heating chamber and the cooling chamber.
4. The apparatus of claim 1, wherein a partition valve is disposed between the first heating chamber and the transfer chamber, a partition valve is disposed between the second heating chamber and the transfer chamber, and a partition valve is disposed between the cooling chamber and the transfer chamber.
5. The semiconductor material annealing apparatus according to claim 1, further comprising a plasma generator, the plasma generator being provided on each of the first heating chamber and the second heating chamber.
6. The semiconductor material annealing device of claim 1, wherein the cooling chamber is on the same side as the sample transport device, and the sample transport device is above the cooling chamber.
7. The semiconductor material annealing device according to claim 1, further comprising a vacuum evacuation device, the transfer chamber, the first heating chamber, the second heating chamber, and the cooling chamber each communicating with the vacuum evacuation device.
8. The semiconductor material annealing device according to claim 7, further comprising a first gas supply device for supplying a shielding gas to the first heating chamber and the second heating chamber.
9. The semiconductor material annealing device according to claim 7, further comprising a second gas supply device for supplying a reaction atmosphere to the first heating chamber and the second heating chamber.
10. A semiconductor material annealing method, which is realized by the semiconductor material annealing apparatus according to any one of claims 1 to 9, comprising the steps of:
s1, conveying the sample to be processed into a first heating chamber through a rotary lifting mechanism for pyrolysis treatment;
s2, transferring the sample processed in the step S1 from the first heating chamber to the second heating chamber through a rotary lifting mechanism to carry out annealing treatment;
s3, transferring the sample processed in the step S2 from the second heating chamber into the first heating chamber through a rotary lifting mechanism, and heating to remove the carbon film on the surface of the sample;
and S4, transferring the sample processed in the step S3 from the first heating chamber into a cooling chamber through a rotary lifting mechanism for cooling treatment, and after cooling is finished, moving the sample out of the transfer chamber.
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