CN214279629U - Conductive film and electronic device - Google Patents
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- CN214279629U CN214279629U CN202022866075.1U CN202022866075U CN214279629U CN 214279629 U CN214279629 U CN 214279629U CN 202022866075 U CN202022866075 U CN 202022866075U CN 214279629 U CN214279629 U CN 214279629U
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Abstract
The embodiment of the application discloses a conductive film and an electronic device. The conductive film includes: a substrate layer; at least one organic water vapor barrier layer; and at least one conductive layer, each layer of the conductive film being sequentially stacked. Make the conducting film possess the performance of preventing steam through setting up organic steam barrier layer, organic steam barrier layer's internal stress is less, not only self is difficult for taking place the warpage, take place ageing back in the material of conducting layer, organic steam barrier layer's internal stress is also not enough to drive the conducting layer and takes place the warpage, and then reduced organic steam barrier layer and taken place cracked possibility under the effect of conducting layer warpage, make organic steam barrier layer's life longer, be of value to the life who prolongs whole conducting film, also can indirectly prolong the life who has the electronic device of the conducting film of this application embodiment, to electronic device, still have the frequency that reduces follow-up change conducting film, advantages such as reduction maintenance cost.
Description
Technical Field
The present disclosure relates to the field of inductive devices, and more particularly, to a conductive film and an electronic device.
Background
This section provides background information related to the present disclosure only and is not necessarily prior art.
The transparent conductive film is a thin film having good conductivity and high transmittance in the visible light band. At present, the transparent conductive film is widely applied to the application fields of solar cell back panels, electrochromic screens, display devices, touch screens and the like.
In the correlation technique, in order to make the conducting film have waterproof vapour performance, can set up inorganic steam barrier layer on the conducting film usually, the inorganic steam barrier layer of current conducting film mostly has the great problem of in situ stress, when the material of the conducting layer of conducting film takes place to age, the warping just takes place easily under the effect of the internal stress of inorganic steam barrier layer for the conducting layer to arouse inorganic steam barrier layer warping thereupon and then lead to inorganic steam barrier layer to split a crack, cause the steam separation performance to reduce.
SUMMERY OF THE UTILITY MODEL
The embodiment of the application provides a conductive film and an electronic device, which can solve the problems that the conductive layer is easy to warp and the water vapor barrier property is reduced. The technical scheme is as follows:
in a first aspect, an embodiment of the present application provides a conductive film, including:
a substrate layer;
at least one organic water vapor barrier layer; and
and at least one conductive layer, wherein the conductive layers are sequentially stacked.
The light projection device of this application embodiment makes the conducting film possess the performance of preventing steam through setting up organic steam barrier layer, compares with current inorganic steam barrier layer, and the internal stress of organic steam barrier layer is less, and not only self is difficult for taking place the warpage, takes place ageing back at the material of conducting layer, and the internal stress of organic steam barrier layer is also not enough to drive the conducting layer and takes place the warpage, and then has reduced the organic steam barrier layer and has taken place cracked possibility under the effect of conducting layer warpage. Therefore, the service life of the organic water vapor barrier layer is longer, and the service life of the whole conductive film is prolonged beneficially. Therefore, the conductive film has stable water vapor resistance and long service life, so that the service life of an electronic device with the conductive film can be indirectly prolonged, and the conductive film has the advantages of reducing the frequency of subsequent replacement of the conductive film, reducing the maintenance cost and the like for the electronic device.
In some of these embodiments, the organic moisture barrier layer is an EVOH resin layer or a polymeric layer containing phosphonic acid groups.
Based on the embodiment, the water vapor barrier property of the EVOH resin layer or the polymer layer containing phosphonic acid groups is utilized, so that the whole conductive film has good water vapor barrier property. Meanwhile, the EVOH resin layer or the resin layer containing phosphonic acid groups also has better flexibility and durability, is not easy to damage after long-term use and is beneficial to prolonging the service life of the whole conductive film.
In some of these embodiments, the organic water vapor barrier layer is filled with inorganic particles.
Based on the embodiment, the inorganic particles are added in the resin layer, so that the path through which water vapor passes is reduced, and the water vapor transmittance is reduced; the thin resin layer can be prevented from deforming under subsequent high-temperature processing, the processing performance of the organic water vapor blocking layer is improved, and meanwhile, the strength, hardness and wear resistance of the organic water vapor blocking layer are improved, so that the conductive film can be widely applied to the application fields of solar cell backboards, electrochromic films, display devices, touch screens and the like. In addition, the resin layer filled with inorganic particles is selected as a barrier layer, so that the whole conductive film has excellent corrosion resistance, chemical resistance, hardness and flexibility.
In some of these embodiments, the inorganic particles comprise TiO2、Al2O3、SiO2At least one of (1).
Based on the above examples, TiO is used2、Al2O3、SiO2Stability of the granules, adding TiO2、Al2O3、SiO2The organic water vapor blocking layer has a better water vapor isolation effect, and the defects of other components caused by water vapor permeation are avoided; moreover, the organic water vapor barrier layer added with the particles has good corrosion resistance, is not easy to corrode, and is beneficial to prolonging the service life of the conductive film.
In some of these embodiments, the inorganic particles have a particle size of 5nm to 50 nm.
Based on the above-described embodiment, when the particle diameter of the inorganic particles is less than 5nm, it is not sufficient to reduce the path of moisture passing through the resin layer, and when the particle diameter of the inorganic particles is greater than 50nm, it is easy to affect the light transmittance of the resin layer.
In some of the embodiments, the organic moisture barrier layer is disposed on a surface of one side of the substrate layer, and the conductive layer is disposed on a surface of the organic moisture barrier layer on a side away from the substrate layer.
Based on above-mentioned embodiment, be integrated as an organic whole with conducting layer, organic steam barrier layer and substrate layer, and each layer all only sets up the one deck, with as few layer structure as possible, guaranteed performances such as barrier property, electric conductivity, transmissivity of conducting film, have material saving, reduction in production cost's advantage, and the conducting film that finally makes is more frivolous, and because of the number of piles is few simultaneously, is favorable to reducing processing step, improves production efficiency, saves manufacturing cost for the enterprise.
In some embodiments, the number of the organic water vapor blocking layers is two, the two organic water vapor blocking layers are respectively arranged on the two side surfaces of the substrate layer, and the conductive layer is arranged on one side surface, far away from the substrate layer, of one organic water vapor blocking layer; or, the quantity of organic steam barrier layer is two-layer, two-layer the organic steam barrier layer sets up respectively the both sides of substrate layer are on the surface, the quantity of conducting layer is two-layer, one of them layer the conducting layer sets up keeping away from of one of them layer organic steam barrier layer one side of substrate layer is on the surface, another layer the conducting layer sets up keeping away from of another layer organic steam barrier layer one side of substrate layer is on the surface.
According to the light projection device, the double-layer organic water vapor blocking layer is arranged, so that the two side surfaces of the substrate layer are covered, the water vapor blocking effect of the conductive film is increased beneficially, the functional influence of water vapor on an electronic device is reduced, and the service life of the electronic device is prolonged indirectly; through setting up double-deck organic steam barrier layer and double-deck conducting layer, guaranteed characteristics such as the separation nature of conducting film, electric conductivity, transmissivity, still make the both sides of conducting film all can use, increase the usable floor area of conducting film, the two sides alternative use of conducting film can prolong the life of conducting film indirectly.
In some embodiments, the thickness of the single organic water vapor barrier layer in the direction perpendicular to the substrate layer is 0.5um to 10um, and/or the thickness of the substrate layer is 5um to 300 um; and/or the thickness of the conductive layer is 10 nm-3 um.
Based on the embodiment, when the thickness of the organic water vapor blocking layer is less than 0.5um, the substrate layer cannot be flattened due to too thin thickness, the water vapor blocking effect is poor, and when the thickness is more than 10um, the thickness is too thick, the adhesive force is poor, and the product is not light and thin; the thickness of the base material layer is larger than 300um, so that the thickness of the whole conductive film is increased, the thickness of the base material layer is smaller than 5um, so that the base material layer is too thin, the base material layer is not rigid enough and is easy to damage in the processing process, and the material waste is caused; the thickness of conducting layer is less than 10nm, and the resistance is big, and the thickness of conducting layer is greater than 3um, is unfavorable for the product frivolousization.
In some of these embodiments, the conductive layer is a thin film layer containing indium tin oxide, an IAI (ITO-AG-ITO) structure, or a metal grid, wherein the IAI structure includes a layer of indium tin oxide material, a layer of silver metal wire material, and a layer of indium tin oxide material in a stacked arrangement.
Based on the embodiment, the indium tin oxide material has the characteristic of high temperature resistance, so that the ITO conductive layer can be annealed and crystallized at a higher temperature, and the square resistance of the ITO conductive layer is reduced; the conductive layer containing an IAI structure or a metal grid improves the conductive performance and the flexibility effect of the conductive film on the basis of the original performance, and can be expanded to the field of flexible application; meanwhile, the raw materials are wide in source, convenient to obtain and low in price, and the manufacturing cost of the conductive film is favorably reduced.
In a second aspect, an embodiment of the present application provides an electronic device, which includes an electronic device body and the conductive film of any of the above embodiments, where the conductive film is mounted on the electronic device body.
Based on this application embodiment in the electron device, its conducting film is stable and long service life in the steam separation performance in the use, and inside steam was difficult for getting into the electron device body, was of value to extension electron device's life, still had the frequency that reduces the follow-up change conducting film of electron device body, advantages such as reduction maintenance cost.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a conductive film provided in an embodiment of the present application;
fig. 2 is a schematic structural diagram of a conductive film provided in the second embodiment of the present application;
fig. 3 is a schematic structural diagram of a conductive film provided in the third embodiment of the present application.
Fig. 4 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings.
When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the application, as detailed in the appended claims.
The embodiment of the present application provides a conductive film 10, referring to fig. 1 to 3, the conductive film 10 includes a substrate layer 100, a conductive layer 300 and an organic water vapor barrier layer 200, wherein the number of the conductive layer 300 may be one or more layers, that is, at least one layer, and the number of the organic water vapor barrier layer 200 may also be one or more layers, that is, at least one layer, and each layer of the conductive film 10 is sequentially stacked.
The inorganic water vapor blocking layer of the existing conductive film mostly has the problem of large in-layer stress, and when the material of the conductive layer of the conductive film is aged, the conductive layer is easy to warp under the effect of the in-layer stress of the inorganic water vapor blocking layer, so that the inorganic water vapor blocking layer is warped along with the conductive layer, and the inorganic water vapor blocking layer is cracked, and the water vapor blocking performance is reduced.
The conducting film 10 of this application embodiment, make conducting film 10 possess the performance of preventing steam through setting up organic steam barrier layer 200, compare with current inorganic steam barrier layer, organic steam barrier layer 200's internal stress is less, not only self is difficult for taking place the warpage, take place ageing back at the material of conducting layer 300, organic steam barrier layer 200's internal stress is also not enough to drive conducting layer 300 and takes place the warpage, and then has reduced organic steam barrier layer 200 and has taken place cracked possibility under the effect of conducting layer 300 warpage. Therefore, the service life of the organic moisture barrier layer 200 is longer, which is beneficial to prolonging the service life of the whole conductive film 10. It can be seen that the conductive film 10 of the embodiment of the present application has stable moisture-proof performance and a long service life, and thus, the service life of the electronic device having the conductive film 10 of the embodiment of the present application can also be indirectly prolonged, and for the electronic device, the conductive film 10 of the embodiment of the present application also has the advantages of reducing the frequency of subsequently replacing the conductive film 10, reducing the maintenance cost, and the like.
In some embodiments, the organic water vapor barrier layer 200 is a resin layer, and the water vapor barrier property of the resin layer is utilized to make the whole conductive film 10 have good water vapor barrier property. Meanwhile, the resin layer has better flexibility and durability, is not easy to damage after long-term use, and is beneficial to prolonging the service life of the whole conductive film 10. In addition, the resin layer also has certain elasticity, feels good, is favorable to reinforcing user's touch experience sense.
Specifically, the resin layer can be made of resin materials such as EVOH (ethylene-vinyl alcohol copolymer) resin and polymers containing phosphonic acid groups, and the resin layer can meet the requirement of water vapor barrier and has the advantages of easiness in processing, low raw material cost and the like.
Specifically, the resin layer may be formed on the surface of the base material layer 100 by vacuum coating. Adopt the mode preparation resin layer of vacuum coating, be convenient for accurately control the thickness and the degree of consistency of resin layer, and adopt above-mentioned mode preparation resin layer, the adhesion force on resin layer is high, and the relation of connection between organic steam barrier layer 200 and the substrate layer 100 is inseparabler, firm, and whole conductive film 10 wholeness is stronger, and then can be stable play performances such as electrically conductive, steam separation.
In other embodiments, the organic moisture barrier layer 200 is filled with inorganic particles. Increase inorganic granule in the resin layer, reduce the route that steam passes through to reduce the steam transmissivity, with the further effect that hinders that separates of mechanical steam barrier layer 200 to steam that improves. In addition, the inorganic particles can be filled to prevent the thin resin layer from deforming in subsequent high-temperature processing, so that the processing performance of the organic water vapor blocking layer 200 is improved, and the strength, hardness and wear resistance of the organic water vapor blocking layer 200 are improved, so that the conductive film 10 can be widely applied to the application fields of solar cell backplanes, electrochromic films, display devices, touch screens and the like. Further, the use of the inorganic particle-filled resin layer as a barrier layer can provide the entire conductive film 10 with excellent corrosion resistance, chemical resistance, hardness, and flexibility.
Further, the resin layer may be made of EVOH (ethylene vinyl alcohol) resin, phosphonic acid-containing polymer, or the like, in which the filled inorganic particles may be selected from one or more of TiO2, Al2O3, SiO2, or the like. In addition, the addition amount of TiO2, SiO2 and Al2O3 can be 5 wt% -15 wt%, and the particle size is 5nm-50 nm. Specifically, the resin layer may be attached to the surface of the substrate layer 100 by vacuum coating, and then the inorganic particles may be grown on the surface of the resin layer by evaporation, sputtering, chemical vapor deposition, or atomic layer deposition.
By utilizing the stability of TiO2, Al2O3 and SiO2 particles, the organic water vapor barrier layer 200 added with TiO2, Al2O3 and SiO2 has better water vapor isolation effect, and avoids the poor performance of other components caused by water vapor permeation; moreover, the organic moisture barrier layer 200 added with the particles has good corrosion resistance and is not easy to corrode, which is beneficial to prolonging the service life of the conductive film 10.
Further, the thickness of the single organic moisture barrier layer 200 is between 0.5um and 10um, preferably 1.0um, in the direction perpendicular to the substrate layer 100.
When the thickness of organic steam barrier layer 200 is less than 0.5um, the unable planarization substrate layer 100 of thickness is too thin, and steam separation effect is poor, and when thickness was greater than 10um, thickness was too thick, and the adhesive force is not good, and is unfavorable for the product frivolousization. The application selects 1.0um for the thickness of organic vapor barrier layer 200, just in time falls into the within range of 0.5um ~ 10um, makes organic vapor barrier layer 200 can enough flatten the adhesive force that substrate layer 100 can possess the preferred again, and then can be stable, firm attached to substrate layer 100 surface, and whole conductive film 10's wholeness is better, and organic vapor barrier layer 200 is difficult for following substrate layer 100 and drops.
Specifically, the thickness of the substrate layer 100 is set to be 5um to 300um in a direction perpendicular to the substrate layer 100, and the substrate layer 100 is preferably made of a flexible transparent polymer material layer having a thickness of 50um, and the polymer material is selected from Cyclic Olefin Polymer (COP), Cyclic Olefin Copolymer (COC), Polyethylene terephthalate (PET), Polyarylate (PAR), Polycarbonate (PC), polyimide (CPI), Polyethylene (PE), Polyethylene terephthalate (PEN), and the like.
The thickness of the substrate layer 100 is larger than 300um, which causes the thickness of the whole conductive film 10 to be larger, and is not beneficial to thinning; the thickness of the substrate layer 100 smaller than 5um may cause the substrate layer 100 to be too thin and to be easily broken due to insufficient rigidity. Therefore, the thickness of the substrate layer 100 is set to be 50um, and the substrate layer 100 just falls into the range of 5 um-300 um, so that the substrate layer 100 has enough rigidity, and the damage rate in the processing process is reduced as far as possible on the premise of ensuring lightness and thinness.
Specifically, the conductive layer 300 may be prepared on the surface of the organic water vapor barrier layer 200 by magnetron sputtering (magnetron sputtering coating, which is a coating technique in which a target material is used as a target cathode, argon ions are used to bombard the target material to generate cathode sputtering, and target material atoms are sputtered onto a workpiece to form a deposition layer). The conductive layer 300 prepared by the method is convenient for accurately controlling the sputtering coating process, is easy to obtain a uniform high-precision conductive layer 300, and has the advantages of high coating speed, compact film layer and good adhesiveness.
In some embodiments, the conductive layer 300 may be a thin film layer containing Indium Tin Oxide (ITO), wherein the ITO refers to a single-layer ITO line subjected to an aging treatment, and has a thickness of 10nm to 100nm, and preferably 38 nm.
The ITO material has the characteristic of high temperature resistance, so that the ITO conductive layer can be annealed and crystallized at a higher temperature, and the square resistance of the ITO conductive layer is reduced; the thickness of the conductive layer 300 is less than 10nm, the resistance is large, and the thickness of the conductive layer 300 is greater than 100um, which is not beneficial to product lightening and thinning.
In other embodiments, the conductive layer 300 may also be a thin film layer containing a metal wire composite material such as a nano silver wire, a nano gold wire, a nano copper wire, etc., and the thickness thereof may be 10nm to 1000 nm.
In other embodiments, the conductive layer 300 may also be a thin film layer containing an IAI structure, which is a three-layer composite circuit, and may have a thickness of 60nm to 150 nm. Wherein the IAI structure comprises a layer of Indium Tin Oxide (ITO) material, a layer of silver (AG) metal wire material, and a layer of Indium Tin Oxide (ITO) material in a stacked arrangement.
The ITO of individual layer is for reaching the square resistance requirement before the use and need carry out ageing treatment, and the square resistance reduces after the ITO ages, but its pliability descends, and the crackle appears easily when buckling and leads to badly, so the touch-control field still can replace the ITO of individual layer with this three layer construction (IAI) and be regarded as the conducting wire, and the ITO of this three layer construction need not pass through ageing treatment, can satisfy the square resistance simultaneously and the requirement of bendability, simplifies manufacturing procedure, improves production efficiency.
In other embodiments, the conductive layer 300 may also be a thin film layer containing a metal mesh, which may have a thickness of 40nm to 3000 nm.
In different embodiments, the conductive layer 300 is made of metal wire composite materials such as nano silver wires, nano gold wires, nano copper wires, etc., or an IAI structure or a metal grid, which is beneficial to improving the conductive performance and the flexibility of the conductive film 10, and meanwhile, the raw materials are wide in source, convenient to obtain, low in price, and beneficial to reducing the manufacturing cost of the conductive film 10.
The following are some specific examples to illustrate the beneficial effects of the present application:
example one: an organic vapor barrier layer 200 with the thickness of 1.0um is used as a barrier layer, a flexible transparent polymer material layer with the thickness of 50um is used as a substrate layer 100, and a thin film layer containing Indium Tin Oxide (ITO) and with the thickness of 38nm is used as a conductive layer 300. The finally prepared conductive film 10 has a Water Vapor Transmission Rate (WVTR) of 6.4 x 10^ (-4) g/m2 day, the warpage of ITO after aging is less than or equal to 1mm/mm, the ITO after aging has no crack, the WVTR attenuation is less than or equal to 5% under the condition of 85 ℃/85 RH% for 500h, and the light transmittance (T.T%) is 89.3%.
Example two: the organic Water Vapor barrier layer 200 with the thickness of 1.0um is used as a barrier layer, the flexible transparent polymer material layer with the thickness of 50um is used as a substrate layer 100, the thin film layer containing the nano silver wire composite material and having the thickness of 10nm-1000nm is used as a conducting layer 300, the Water Vapor Transmission Rate (WVTR) of the finally prepared conducting film 10 can reach 7.4 x 10 (-4) g/m2 day, the bending resistance phi is 4mm and 20 ten thousand times, the WVTR attenuation is less than or equal to 5% under the condition of 85 ℃/85 RH% 500h, and the light transmittance (T.T%) is 88.0%.
Example three: the organic Water Vapor barrier layer 200 with the thickness of 1.0um is used as a barrier layer, the flexible transparent polymer material layer with the thickness of 50um is used as a substrate layer 100, the thin film layer with the thickness of 60nm-150nm of an IAI structure is used as a conductive layer 300, the Water Vapor Transmission Rate (WVTR) of the finally prepared conductive film 10 can reach 7.8 x 10-4g/m2 day, the bending resistance is phi 4mm20 ten thousand times, the WVTR attenuation is less than or equal to 5% under the condition of 85 ℃/85 RH% 500h, and the light transmittance (T.T%) is 84.0%.
In some embodiments, referring to fig. 1, the conductive layer 300 and the organic moisture barrier layer 200 are both one layer in number, specifically, the organic moisture barrier layer 200 is disposed on one side surface of the substrate layer 100, and the conductive layer 300 is disposed on one side surface of the organic moisture barrier layer 200 away from the substrate layer 100.
The conducting film 10 in the embodiment of the application integrates the conducting layer 300, the organic water vapor blocking layer 200 and the substrate layer 100, and each layer is only provided with one layer, and the properties of the conducting film 10, such as blocking property, conductivity and transmittance, are ensured by using the layer structure as few as possible, so that the conducting film has the advantages of saving materials and reducing production cost, and the finally manufactured conducting film 10 is thinner and lighter, and meanwhile, the number of processing layers is less, so that the processing steps are reduced, the production efficiency is improved, and the production cost is saved for enterprises.
In other embodiments, referring to fig. 2, the number of the organic moisture barrier layers 200 is two, two organic moisture barrier layers 200 are respectively disposed on two side surfaces of the substrate layer 100, and the conductive layer 300 is disposed on one side surface of one of the organic moisture barrier layers 200 away from the substrate layer 100.
The conducting film 10 in the embodiment of the application, double-deck organic steam barrier layer 200 sets up, all covers the both sides surface of substrate layer 100, is of value to the steam separation effect that increases conducting film 10, reduces the functional influence that steam caused electronic device, indirect extension electronic device's life.
In some other embodiments, referring to fig. 3, the number of the organic water vapor blocking layer 200 and the number of the conductive layer 300 are two, the two organic water vapor blocking layers 200 are respectively disposed on two side surfaces of the substrate layer 100, one of the conductive layers 300 is disposed on one side surface of one of the organic water vapor blocking layers 200 away from the substrate layer 100, and the other conductive layer 300 is disposed on one side surface of the other organic water vapor blocking layer 200 away from the substrate layer 100.
The conducting film 10 in the embodiment of the application is provided with the double-layer organic water vapor blocking layer 200 and the double-layer conducting layer 300, so that the characteristics of the conducting film 10, such as blocking property, conductivity and transmittance, are guaranteed, two sides of the conducting film 10 can be used, the using area of the conducting film 10 is increased, the two sides of the conducting film 10 are used alternately, and the service life of the conducting film 10 can be indirectly prolonged.
It is understood that the number of the organic water vapor barrier layer 200 and/or the conductive layer 300 may also exceed two, and the specific number of the layers may be set according to actual needs, which is not limited in this application.
In a second aspect, referring to fig. 4, an embodiment of the present application provides an electronic device 1, including an electronic device body 20 and the conductive film 10 of any of the embodiments, where the conductive film 10 is mounted on the electronic device body 20. The electronic device 1 may be an electronic device with a conductive film such as a touch panel, a fingerprint recognition device, a solar cell panel, or a display device.
Based on this application embodiment in electronic device 1, its conductive film 10 is stable and long service life in the use, and inside steam was difficult for getting into electronic device body 20, was of value to extension electronic device 1's life, still had the frequency that reduces the follow-up change conductive film 10 of electronic device body 20, advantages such as reduction maintenance cost.
In the description of the present application, it is to be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art. Further, in the description of the present application, "a plurality" means two or more unless otherwise specified. "and/or" describes the association relationship of the associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a exists alone, A and B exist simultaneously, and B exists alone. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship.
The above disclosure is only for the purpose of illustrating the preferred embodiments of the present application and is not to be construed as limiting the scope of the present application, so that the present application is not limited thereto, and all equivalent variations and modifications can be made to the present application.
Claims (10)
1. A conductive film, comprising:
a substrate layer;
at least one organic water vapor barrier layer; and
and at least one conductive layer, wherein the conductive layers are sequentially stacked.
2. The conductive film of claim 1 wherein the organic moisture barrier layer is an EVOH resin layer or a polymeric layer containing phosphonic acid groups.
3. The conductive film of claim 1 wherein the organic water vapor barrier layer is filled with inorganic particles.
4. The conductive film of claim 3 wherein the inorganic particles comprise TiO2、Al2O3、SiO2At least one of (1).
5. The conductive film according to claim 3, wherein the inorganic particles have a particle size of 5nm to 50 nm.
6. The conductive film of claim 1 wherein the organic moisture barrier layer is disposed on a surface of one side of the substrate layer and the conductive layer is disposed on a surface of the organic moisture barrier layer on a side remote from the substrate layer.
7. The conductive film of claim 1 wherein the number of the organic water vapor blocking layers is two, the two organic water vapor blocking layers are respectively disposed on the two side surfaces of the substrate layer, and the conductive layer is disposed on one side surface of one of the organic water vapor blocking layers away from the substrate layer; or the like, or, alternatively,
the quantity of organic steam barrier layer is two-layer, two-layer the organic steam barrier layer sets up respectively the both sides of substrate layer are on the surface, the quantity of conducting layer is two-layer, one of them layer the conducting layer sets up keeping away from of one of them layer organic steam barrier layer one side of substrate layer is on the surface, another layer the conducting layer sets up keeping away from of another layer organic steam barrier layer one side of substrate layer is on the surface.
8. The conductive film of claim 1 wherein the thickness of the single layer of the organic water vapor barrier layer is from 0.5um to 10um in a direction perpendicular to the substrate layer; and/or the thickness of the substrate layer is 5 um-300 um; and/or the thickness of the conductive layer is 10 nm-3 um.
9. The conductive film of any of claims 1-8, wherein the conductive layer is a thin film layer comprising indium tin oxide, an IAI structure, or a metal grid, wherein the IAI structure is a layer of indium tin oxide material, a layer of silver metal wire material, and a layer of indium tin oxide material in a stacked arrangement.
10. An electronic device, comprising an electronic device body and the conductive film according to any one of claims 1 to 9, the conductive film being mounted on the electronic device body.
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| CN202022866075.1U CN214279629U (en) | 2020-12-03 | 2020-12-03 | Conductive film and electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114340265A (en) * | 2021-12-30 | 2022-04-12 | Oppo广东移动通信有限公司 | Shell assembly, preparation method thereof and electronic equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114340265A (en) * | 2021-12-30 | 2022-04-12 | Oppo广东移动通信有限公司 | Shell assembly, preparation method thereof and electronic equipment |
| CN114340265B (en) * | 2021-12-30 | 2024-04-16 | Oppo广东移动通信有限公司 | Shell assembly, manufacturing method thereof and electronic equipment |
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