CN214252546U - Novel TMR magnetic field sensor - Google Patents
Novel TMR magnetic field sensor Download PDFInfo
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- CN214252546U CN214252546U CN202022980052.3U CN202022980052U CN214252546U CN 214252546 U CN214252546 U CN 214252546U CN 202022980052 U CN202022980052 U CN 202022980052U CN 214252546 U CN214252546 U CN 214252546U
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Abstract
Novel TMR magnetic field sensor includes: the TMR magnetic sensor chip is obliquely arranged relative to the surface of the substrate, and an included angle exists between the easy axis direction of the TMR magnetic sensor chip and the direction of an external magnetic field to be measured. The utility model discloses a sensing is the component of outer magnetic field, has bigger dynamic measurement scope, concentrates on easy axle and the Z axle of TMR magnetic sensor chip through making outer magnetic field component moreover, and TMR magnetic sensor chip mainly senses the easy epaxial component and measures, compares in the TMR magnetic sensor who concentrates on easy axle and difficult axle outer magnetic field component and has better linearity.
Description
Technical Field
The utility model belongs to the technical field of the sensor is measured, indicate especially to relate to a TMR magnetic field sensor.
Background
The TMR element is a novel magnetoresistive effect sensor element, and has been widely used in industrial environments because of its advantages such as a larger resistance change rate, better temperature characteristics and linearity compared with AMR elements and GMR elements. The TMR magnetic field sensor has a measurable magnetic field range within which the output of the TMR magnetic field sensor is linear, and beyond which the output of the TMR magnetic field sensor tends to saturate. The measurable magnetic field range of the TMR magnetic field sensor is mainly influenced by factors such as the formula, the thickness and the shape of a sensing layer. But the effect of expanding the measurable magnetic field range by changing the sensing layer formulation, thickness or shape is less significant and requires a significant investment in cost. Therefore, it is expected that the measurable magnetic field range of the TMR magnetic field sensor can be improved while maintaining the structural design of the original TMR magnetic sensor.
It has been proposed to extend the field measurement range of TMR magnetic field sensors by means of flux concentrators constructed in TMR magnetic field sensors using soft magnetic materials, the external magnetic field passing through the flux concentrator producing a distorted magnetic field component, the distortion of the external magnetic field being altered by altering the geometry of the flux concentrator. The TMR sensing layer achieves the purpose of increasing the magnetic field measuring range by measuring the external magnetic field component distorted by the flux concentrator on the easy axis. However, due to the addition of the soft magnetic material, the method not only can increase the magnetic hysteresis of the TMR magnetic field sensor, but also increases the difficulty of the preparation process of the TMR magnetic field sensor and increases the cost.
It has also been proposed to extend the magnetic field measurement range of a TMR magnetic field sensor by means of self-measuring current wires, which add one or more self-measuring current wires to the TMR magnetic field sensor, passing a current through the self-measuring current wires to generate a magnetic field in a direction opposite to that of the external magnetic field when the magnitude of the external magnetic field reaches the measurement threshold of the TMR magnetic field sensor, thereby ensuring that the net magnetic field is within the measurement range of the TMR magnetic field sensor. The direction and the magnitude of the magnetic field generated by the self-test current wire can be controlled by changing the connection mode of the self-test current wire and the magnitude of the current in the self-test current wire. However, since the self-test current is added in the method, the power consumption of the TMR magnetic field sensor is increased, the manufacturing process difficulty of the magnetic field sensor is increased, and the cost is increased.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a low-cost multiplicable magnetic field measurement range's TMR magnetic field sensor.
In order to achieve the above object, the present invention adopts the following technical solutions:
novel TMR magnetic field sensor includes: the TMR magnetic sensor chip is obliquely arranged relative to the surface of the substrate, and an included angle exists between the easy axis direction of the TMR magnetic sensor chip and the direction of an external magnetic field to be measured.
As a specific embodiment of the utility model discloses TMR magnetic field sensor, be provided with on the substrate from its surface inwards sunken recess, the recess has and is used for fixing TMR magnetic sensor chip's inclined plane, pack in the recess and cover TMR magnetic sensor chip's plastic envelope layer.
As a specific embodiment of the TMR magnetic field sensor of the present invention, the vertical cross-sectional shape of the groove is an isosceles triangle or an isosceles trapezoid.
As a specific implementation manner of the utility model discloses TMR magnetic field sensor, be provided with first TMR magnetic sensor chip and second TMR magnetic sensor chip on the substrate, the easy axis positive direction of first TMR magnetic sensor chip with the easy axis positive direction of second TMR magnetic sensor chip is opposite, first TMR magnetic sensor chip and second TMR magnetic sensor chip connect into full-bridge circuit structure.
As a specific implementation of the utility model discloses TMR magnetic field sensor, the substrate bottom surface is provided with the rewiring layer, the rewiring layer is through following the substrate bottom surface run through to the metal plug of the chip pad of TMR magnetic sensor chip with the TMR magnetic sensor chip links to each other, the bottom surface of rewiring layer is provided with the external pad of sensor that is used for TMR magnetic field sensor's power supply and signal output.
As a specific embodiment of the present invention, the TMR magnetic field sensor is provided with a first groove and a second groove which are recessed from the surface of the substrate, the first groove has a first inclined plane for fixing the first TMR magnetic sensor chip, the second groove has a fourth inclined plane for fixing the second TMR magnetic sensor chip.
As a specific embodiment of the TMR magnetic field sensor of the present invention, the inclination angle of the first inclined plane with respect to the substrate surface is the same as the inclination angle of the fourth inclined plane with respect to the substrate surface, or the inclination angle of the first inclined plane with respect to the substrate surface and the inclination angle of the fourth inclined plane with respect to the substrate surface differ by 90 °.
As a specific embodiment of the TMR magnetic field sensor of the present invention, further comprises a metal layer covering the substrate surface.
As a specific embodiment of the utility model discloses TMR magnetic field sensor, when setting up a plurality of TMR magnetic sensor chips on the substrate, all TMR magnetic sensor chips set up in same height.
As a specific implementation of the TMR magnetic sensor of the present invention, the TMR magnetic sensor chip is in operation, and the sensing external magnetic field is in the magnetic field component in the easy axis direction of the TMR magnetic sensor chip.
According to the above technical scheme, the utility model discloses set up TMR magnetic sensor chip slope on the polar plate, make it form the contained angle with the outer magnetic field that awaits measuring, the realization concentrates on the easy axle and the Z axle of TMR magnetic sensor chip with the component of outer magnetic field, what TMR magnetic sensor chip sensed is the component of outer magnetic field, consequently, compare the TMR magnetic sensor who places in the level and have bigger dynamic measurement scope, and through making outer magnetic field component concentrate on the easy axle and the Z axle of TMR magnetic sensor chip, TMR magnetic sensor chip mainly senses the epaxial component of ease and measures, compare in the TMR magnetic sensor who concentrates on easy axle and difficult axle outer magnetic field component and have better linearity. In a more specific technical scheme, the push-pull full-bridge connection of the tunnel junction magneto resistance is realized by adopting a rewiring technology, so that the sensitivity of the sensor can be further improved.
Drawings
In order to illustrate the embodiments of the present invention more clearly, the drawings that are needed in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained by those skilled in the art without inventive effort.
Fig. 1 is a schematic structural diagram of an embodiment of the present invention;
fig. 2 to 8 are schematic views of steps in the preparation process of embodiment 1 of the present invention;
fig. 9 is a schematic diagram of the magnetic field component of the external magnetic field in the first TMR magnetic sensor chip according to the present invention;
fig. 10 is a schematic structural view of embodiment 2 of the present invention.
Detailed Description
In order to make the above and other objects, features and advantages of the present invention more apparent, the following embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Example 1
As shown in fig. 1, the TMR magnetic field sensor of the present embodiment includes a substrate 1, on which a first TMR magnetic sensor chip 7 and a second TMR magnetic sensor chip 9 are provided, both the first and second magnetic sensor chips being disposed obliquely with respect to the surface (external magnetic field direction) of the substrate 1. This embodiment provides two grooves on the substrate 1: a first recess (not numbered) and a second recess (not numbered) for mounting the TMR magnetic sensor chip. The vertical cross-sectional shapes of the two grooves of the present embodiment are all isosceles triangles, that is, each groove has two oppositely arranged inclined planes, and the two inclined planes are axisymmetric. Two grooves have 4 slopes in total: the first inclined plane 2 and the second inclined plane 3 are oppositely arranged and located in the first groove, and the third inclined plane 4 and the fourth inclined plane 5 are oppositely arranged and located in the second groove. First TMR magnetic sensor chip 7 sets up on first inclined plane 2, and second TMR magnetic sensor chip 9 sets up on fourth inclined plane 5, and two TMR magnetic sensor chips set up the height the same. By arranging the TMR magnetic sensor chip obliquely relative to the substrate, an included angle exists between the easy axis direction of the TMR magnetic sensor chip and the external magnetic field direction (the direction shown by an arrow 6 in fig. 1), so that a magnetic field component exists in the easy axis direction of the TMR magnetic sensor chip 7 by the external magnetic field, and the TMR magnetic sensor chip outputs voltage information related to the external magnetic field by sensing the component on the external magnetic field on the easy axis.
In order to improve the sensitivity of the sensor, the first TMR magnetic sensor chip 7 and the second TMR magnetic sensor chip 9 of the present embodiment are connected to form a push-pull full bridge circuit structure, and the resistance value of the first TMR magnetic sensor chip 7 and the resistance value of the second TMR magnetic sensor chip 9 have opposite variation trends with an external magnetic field. In order to form a full bridge circuit, the two TMR magnetic sensor chips are disposed in different recesses in this embodiment, but in other embodiments, the two TMR magnetic sensor chips may be disposed on opposite slopes of the same recess. In addition, except that the TMR magnetic sensor chip can be installed by adopting a groove inclined plane inclined towards the inside of the substrate 1, the TMR magnetic sensor chip can also be installed by adopting an inclined plane protruding towards the outside of the substrate, as long as the easy axis direction of the TMR magnetic sensor chip is inclined with the external magnetic field direction to be measured to form an included angle. The installation structure of the groove is adopted, so that the surface structure of the substrate is smooth, and the packaging is convenient. The utility model discloses a change TMR magnetic sensor chip's installation direction, make TMR magnetic sensor chip during operation, outer magnetic field component is concentrated in easy axle and easy axle, the difficult axle looks vertically Z of TMR sensing unit epaxially, and Z axle perpendicular to is easy axle and difficult axle place plane promptly. The TMR magnetic sensor chip provided on the substrate may be one or more, and when there are a plurality of TMR magnetic sensor chips, these magnetic sensor chips may be connected in a full bridge circuit structure or a half bridge circuit structure. The TMR magnetic sensor chip can be arranged on the same inclined plane or different inclined planes, and when the TMR magnetic sensor chip is arranged on the same inclined plane, the magnetic sensor chips are located at the same height.
The first and second grooves are filled with a first plastic package layer 12 and a second plastic package layer 13 respectively, which cover the first TMR magnetic sensor chip 7 and the second TMR magnetic sensor chip 9. The plastic packaging layer can be made of materials such as silica gel, silicon oxide and silicon nitride, and plays a role in filling and fixing. Preferably, the surface of the substrate 1 is covered with a metal layer 14, the metal layer 14 may be made of nonmagnetic metal or alloy, such as gold, titanium, etc., and the metal layer 14 plays a role of structural reinforcement and heat dissipation. A rewiring layer 17 is provided on the bottom surface of the substrate 1, and the rewiring layer 17 is electrically connected to the TMR magnetic sensor chip through the metal plug 15. The sensor external pads 18 are provided on the bottom surface of the redistribution layer 17, and in the present embodiment, a total of 8 sensor external pads 18 are provided. The number of sensor external pads 18 may be set as desired.
The following describes the preparation process of the TMR magnetic field sensor of this embodiment with reference to fig. 2 to 8:
as shown in fig. 2, first, a substrate 1 is provided, and a first groove and a second groove are processed on the surface of the substrate 1 by cutting, etching, and other processes, so as to form an inclined plane for mounting a TMR magnetic sensor chip, where an included angle between a first inclined plane 2 and a second inclined plane 3 is 90 °, and an included angle between a third inclined plane 4 and a fourth inclined plane 5 is 90 °; the inclination angle of the inclined plane, namely the included angle between the inclined plane and the surface (horizontal plane) of the substrate is not limited, and the included angle between two crossed inclined planes can be other angles;
as shown in fig. 3, a first TMR magnetic sensor chip 7 and a second TMR magnetic sensor chip 9 are respectively disposed on the first inclined plane 2 and the fourth inclined plane 5, the TMR magnetic sensor chip is prepared by magnetron sputtering, annealing, and the like, each magnetic sensor chip has a chip pad 8 (fig. 4); in the embodiment, a DAF film adhesive 11 is adopted to fix a first TMR magnetic sensor chip 7 and a second TMR magnetic sensor chip 9 on a first inclined plane 2 and a fourth inclined plane 5 respectively, and the two TMR magnetic sensor chips are arranged at the same height; the positive direction of the easy axis of the first TMR magnetic sensor chip 7 is made to go up or down along the first inclined plane 2 (figure 9), the positive direction of the easy axis of the second TMR magnetic sensor chip 9 is opposite to the positive direction of the easy axis of the first TMR magnetic sensor chip 7, if the positive direction of the easy axis of the first TMR magnetic sensor chip 7 goes down along the first inclined plane 2, the positive direction of the easy axis of the second TMR magnetic sensor chip 9 goes up along the fourth inclined plane 5, so that when an external magnetic field in the direction shown by an arrow 6 in figure 3 is applied, the resistance values of TMR magneto-resistance elements in the first TMR magnetic sensor chip 7 and the second TMR magnetic sensor chip 9 have opposite trends along with the change of the external magnetic field;
as shown in fig. 5, glue is filled in the first groove and the second groove to form a first plastic package layer 12 and a second plastic package layer 13, and then a metal layer 14 covering the surface of the pole piece 1 is formed on the surface of the substrate 1 by adopting processes such as deposition, electroplating and the like;
as shown in fig. 6, a through hole penetrating to a chip pad 8 of a TMR magnetic sensor chip is processed on the bottom surface of a substrate 1, the through hole can be prepared by processes such as dry etching, laser drilling, etc., a metal plug 15 is formed in the through hole by methods such as Physical Vapor Deposition (PVD), electroplating or chemical plating, etc., the metal plug 15 is used for realizing electrical connection between the TMR magnetic sensor chip and a heavy wiring layer, one end of the metal plug 15 is connected with the chip pad 8 of the TMR magnetic sensor chip, and the other end forms a plug pad 16 connected with the heavy wiring layer;
as shown in fig. 7, a rewiring layer 17 is formed on the bottom surface of the substrate 1 by adopting a rewiring technology, the rewiring layer 17 rewires the plug pads 16 and forms external connection pads 18, and the TMR magnetoresistive cells in the first TMR magnetic sensor chip 7 and the second TMR magnetic sensor chip 9 realize a circuit structure of push-pull full bridge connection through the chip pads 8, the metal plugs 15, the plug pads 16 and the rewiring layer 17;
cutting and injection molding are carried out on the substrate 1 to form the TMR magnetic field sensor, and the magnetic field sensor of the embodiment has 8 external connection pads (figure 8): 18-1, 18-2, 18-3, 18-4, 18-5, 18-6, 18-7 and 18-8, wherein 18-1, 18-2, 18-5 and 18-6 are empty pins, and 18-3, 18-5, 18-7 and 18-8 are respectively used for power supply and signal output of the TMR magnetic field sensor.
The working principle of the embodiment is as follows:
because the TMR magnetic sensor chip is disposed obliquely, there is an angle between the easy axis direction and the external magnetic field direction to be measured, taking the first TMR magnetic sensor chip as an example, as shown in fig. 9, the external magnetic field 6 will have a magnetic field component 28 in the easy axis direction (direction 29 in fig. 9) of the first TMR magnetic sensor chip 7, and another magnetic field component 27 in the Z axis direction (direction 26 in fig. 9), the first TMR magnetic sensor chip (the second magnetic sensor chip 9 is the same as above) outputs voltage information related to the external magnetic field by sensing the component of the external magnetic field in the easy axis direction, so as to achieve the purpose of extending the measurement magnetic field range. The utility model discloses a TMR magnetic sensor chip is outer magnetic field when measuring does not have the magnetic field component on difficult axle, and magnetic field variation only changes on easy axle and Z axle plane all the time, because the epaxial magnetic field component of Z can not influence the linearity of magnetic sensor chip to avoided the difficult epaxial magnetic field component of traditional TMR magnetic sensor chip to lead to the condition of the linearity variation of magnetic sensor chip output, consequently had less hysteresis lag and linearity. And by connecting the first TMR magnetic sensor chip 7 and the second TMR magnetic sensor chip 9 into a push-pull full-bridge circuit structure, the sensitivity is higher compared with a half-bridge structure.
Example 2
As shown in fig. 10, this embodiment is different from embodiment 1 in that: the second TMR magnetic sensor chip 9 is installed on the third inclined plane 4 of the substrate 1, the first TMR magnetic sensor chip 7 and the second TMR secondary long ampere new chip 9 are installed in a mutually reversed mode, the positive direction of the easy axis of the first TMR magnetic sensor chip 7 is opposite to the positive direction of the easy axis of the second TMR magnetic sensor chip 9, one positive direction of the easy axis is upward along the inclined plane, the other positive direction of the easy axis is downward along the inclined plane, the resistance values of TMR magneto-resistor elements in the first TMR magnetic sensor chip 7 and the second TMR magnetic sensor chip 9 change along with the external magnetic field in a reverse trend, TMR magneto-resistor units in the first TMR magnetic sensor chip 7 and the second TMR magnetic sensor chip 9 realize a circuit structure of push-pull full-bridge connection through a chip bonding pad, a metal plug, a plug bonding pad and a heavy wiring layer. The preparation process and the working principle of the embodiment 1 and the embodiment 2 are the same, and the detailed description is omitted here.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. Novel TMR magnetic field sensor includes: the TMR magnetic sensor comprises a substrate and one or more TMR magnetic sensor chips arranged on the substrate, and is characterized in that: the TMR magnetic sensor chip is obliquely arranged relative to the surface of the substrate, and an included angle exists between the easy axis direction of the TMR magnetic sensor chip and the direction of an external magnetic field to be measured.
2. A novel TMR magnetic field sensor as claimed in claim 1, wherein: the TMR magnetic sensor chip comprises a substrate and is characterized in that a groove which is sunken inwards from the surface of the substrate is arranged on the substrate, the groove is provided with an inclined plane for fixing the TMR magnetic sensor chip, and a plastic packaging layer which covers the TMR magnetic sensor chip is filled in the groove.
3. A novel TMR magnetic field sensor as claimed in claim 2, wherein: the vertical section of the groove is in the shape of an isosceles triangle or an isosceles trapezoid.
4. A novel TMR magnetic field sensor as claimed in claim 1, wherein: be provided with first TMR magnetic sensor chip and second TMR magnetic sensor chip on the substrate, the easy axle positive direction of first TMR magnetic sensor chip with the easy axle positive direction of second TMR magnetic sensor chip is opposite, first TMR magnetic sensor chip and second TMR magnetic sensor chip connect into full-bridge circuit structure.
5. A novel TMR magnetic field sensor as claimed in claim 1 or 4, wherein: the bottom surface of the substrate is provided with a rewiring layer, the rewiring layer is connected with the TMR magnetic sensor chip through a metal plug penetrating from the bottom surface of the substrate to a chip bonding pad of the TMR magnetic sensor chip, and the bottom surface of the rewiring layer is provided with a sensor external bonding pad used for power supply and signal output of the TMR magnetic sensor.
6. A novel TMR magnetic field sensor according to claim 4, characterised in that: the substrate is provided with a first groove and a second groove which are inwards sunken from the surface of the substrate, the first groove is provided with a first inclined plane used for fixing the first TMR magnetic sensor chip, and the second groove is provided with a fourth inclined plane used for fixing the second TMR magnetic sensor chip.
7. A novel TMR magnetic field sensor as claimed in claim 6, wherein: the first slope and the fourth slope are inclined at the same angle with respect to the substrate surface, or the first slope and the fourth slope are inclined at an angle different by 90 ° with respect to the substrate surface.
8. A novel TMR magnetic field sensor as claimed in claim 1, wherein: also included is a metal layer overlying the substrate surface.
9. A novel TMR magnetic field sensor as claimed in claim 1, wherein: when a plurality of TMR magnetic sensor chips are arranged on the substrate, all the TMR magnetic sensor chips are arranged at the same height.
10. A novel TMR magnetic field sensor as claimed in claim 1, wherein: when the TMR magnetic sensor chip works, the magnetic field component of an external magnetic field in the easy axis direction of the TMR magnetic sensor chip is sensed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022980052.3U CN214252546U (en) | 2020-12-10 | 2020-12-10 | Novel TMR magnetic field sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022980052.3U CN214252546U (en) | 2020-12-10 | 2020-12-10 | Novel TMR magnetic field sensor |
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| CN214252546U true CN214252546U (en) | 2021-09-21 |
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| CN202022980052.3U Active CN214252546U (en) | 2020-12-10 | 2020-12-10 | Novel TMR magnetic field sensor |
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| CN (1) | CN214252546U (en) |
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