CN112557972A - TMR magnetic field sensor - Google Patents
TMR magnetic field sensor Download PDFInfo
- Publication number
- CN112557972A CN112557972A CN202011454257.6A CN202011454257A CN112557972A CN 112557972 A CN112557972 A CN 112557972A CN 202011454257 A CN202011454257 A CN 202011454257A CN 112557972 A CN112557972 A CN 112557972A
- Authority
- CN
- China
- Prior art keywords
- tmr magnetic
- magnetic sensor
- sensor chip
- magnetic field
- tmr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/095—Magnetoresistive devices extraordinary magnetoresistance sensors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
A TMR magnetic field sensor, comprising: the TMR magnetic sensor chip is obliquely arranged relative to the surface of the substrate, and an included angle exists between the easy axis direction of the TMR magnetic sensor chip and the direction of an external magnetic field to be measured. The TMR magnetic sensor chip mainly senses the component on the easy axis to perform measurement, and has better linearity compared with the TMR magnetic sensor which concentrates the external magnetic field component on the easy axis and the hard axis.
Description
Technical Field
The invention belongs to the technical field of sensor measurement, and particularly relates to a TMR magnetic field sensor.
Background
The TMR element is a novel magnetoresistive effect sensor element, and has been widely used in industrial environments because of its advantages such as a larger resistance change rate, better temperature characteristics and linearity compared with AMR elements and GMR elements. The TMR magnetic field sensor has a measurable magnetic field range within which the output of the TMR magnetic field sensor is linear, and beyond which the output of the TMR magnetic field sensor tends to saturate. The measurable magnetic field range of the TMR magnetic field sensor is mainly influenced by factors such as the formula, the thickness and the shape of a sensing layer. But the effect of expanding the measurable magnetic field range by changing the sensing layer formulation, thickness or shape is less significant and requires a significant investment in cost. Therefore, it is expected that the measurable magnetic field range of the TMR magnetic field sensor can be improved while maintaining the structural design of the original TMR magnetic sensor.
It has been proposed to extend the field measurement range of TMR magnetic field sensors by means of flux concentrators constructed in TMR magnetic field sensors using soft magnetic materials, the external magnetic field passing through the flux concentrator producing a distorted magnetic field component, the distortion of the external magnetic field being altered by altering the geometry of the flux concentrator. The TMR sensing layer achieves the purpose of increasing the magnetic field measuring range by measuring the external magnetic field component distorted by the flux concentrator on the easy axis. However, due to the addition of the soft magnetic material, the method not only can increase the magnetic hysteresis of the TMR magnetic field sensor, but also increases the difficulty of the preparation process of the TMR magnetic field sensor and increases the cost.
It has also been proposed to extend the magnetic field measurement range of a TMR magnetic field sensor by means of self-measuring current wires, which add one or more self-measuring current wires to the TMR magnetic field sensor, passing a current through the self-measuring current wires to generate a magnetic field in a direction opposite to that of the external magnetic field when the magnitude of the external magnetic field reaches the measurement threshold of the TMR magnetic field sensor, thereby ensuring that the net magnetic field is within the measurement range of the TMR magnetic field sensor. The direction and the magnitude of the magnetic field generated by the self-test current wire can be controlled by changing the connection mode of the self-test current wire and the magnitude of the current in the self-test current wire. However, since the self-test current is added in the method, the power consumption of the TMR magnetic field sensor is increased, the manufacturing process difficulty of the magnetic field sensor is increased, and the cost is increased.
Disclosure of Invention
The invention aims to provide a TMR magnetic field sensor which is low in cost and can increase the magnetic field measurement range.
In order to achieve the purpose, the invention adopts the following technical solutions:
a TMR magnetic field sensor, comprising: the TMR magnetic sensor chip is obliquely arranged relative to the surface of the substrate, and an included angle exists between the easy axis direction of the TMR magnetic sensor chip and the direction of an external magnetic field to be measured.
As a specific embodiment of the TMR magnetic field sensor of the present invention, the substrate is provided with a groove recessed from its surface, the groove has an inclined surface for fixing the TMR magnetic sensor chip, and the groove is filled with a plastic encapsulation layer covering the TMR magnetic sensor chip.
As a specific embodiment of the TMR magnetic field sensor of the present invention, the vertical cross-sectional shape of the groove is an isosceles triangle or an isosceles trapezoid.
As a specific embodiment of the TMR magnetic field sensor of the present invention, the substrate is provided with a first TMR magnetic sensor chip and a second TMR magnetic sensor chip, a positive direction of an easy axis of the first TMR magnetic sensor chip is opposite to a positive direction of an easy axis of the second TMR magnetic sensor chip, and the first TMR magnetic sensor chip and the second TMR magnetic sensor chip are connected to form a full bridge circuit structure.
As a specific embodiment of the TMR magnetic field sensor of the present invention, the bottom surface of the substrate is provided with a rewiring layer connected to the TMR magnetic sensor chip through a metal plug penetrating from the bottom surface of the substrate to a chip pad of the TMR magnetic sensor chip, and the bottom surface of the rewiring layer is provided with a sensor external pad for power supply and signal output of the TMR magnetic field sensor.
As a specific embodiment of the TMR magnetic field sensor of the present invention, the substrate is provided with a first recess and a second recess recessed from the surface thereof, the first recess having a first slope for fixing the first TMR magnetic sensor chip, the second recess having a fourth slope for fixing the second TMR magnetic sensor chip.
As a specific embodiment of the TMR magnetic field sensor of the present invention, the inclination angle of the first slope with respect to the substrate surface and the inclination angle of the fourth slope with respect to the substrate surface are the same, or the inclination angle of the first slope with respect to the substrate surface and the inclination angle of the fourth slope with respect to the substrate surface differ by 90 °.
The TMR magnetic field sensor also comprises a metal layer covering the surface of the substrate.
As a specific embodiment of the TMR magnetic field sensor of the present invention, when a plurality of TMR magnetic sensor chips are disposed on the substrate, all the TMR magnetic sensor chips are disposed at the same height.
As a specific embodiment of the TMR magnetic field sensor of the present invention, the TMR magnetic sensor chip senses a magnetic field component of an external magnetic field in an easy axis direction of the TMR magnetic sensor chip when in operation.
According to the technical scheme, the TMR magnetic sensor chip is obliquely arranged on the pole piece, so that an included angle can be formed between the chip and an external magnetic field to be measured, components of the external magnetic field are concentrated on the easy axis and the Z axis of the TMR magnetic sensor chip, the TMR magnetic sensor chip senses the components of the external magnetic field, and therefore the TMR magnetic sensor chip has a larger dynamic measurement range compared with a TMR magnetic sensor which is horizontally placed. In a more specific technical scheme, the push-pull full-bridge connection of the tunnel junction magneto resistance is realized by adopting a rewiring technology, so that the sensitivity of the sensor can be further improved.
Drawings
In order to illustrate the embodiments of the present invention more clearly, the drawings that are needed in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained by those skilled in the art without inventive effort.
FIG. 1 is a schematic structural diagram of an embodiment of the present invention;
FIGS. 2 to 8 are schematic views of respective steps in the production process of example 1 of the present invention;
FIG. 9 is a schematic diagram of the magnetic field components of the external magnetic field at the first TMR magnetic sensor chip of the present invention;
fig. 10 is a schematic structural diagram of embodiment 2 of the present invention.
Detailed Description
In order to make the aforementioned and other objects, features and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
Example 1
As shown in fig. 1, the TMR magnetic field sensor of the present embodiment includes a substrate 1, on which a first TMR magnetic sensor chip 7 and a second TMR magnetic sensor chip 9 are provided, both the first and second magnetic sensor chips being disposed obliquely with respect to the surface (external magnetic field direction) of the substrate 1. This embodiment provides two grooves on the substrate 1: a first recess (not numbered) and a second recess (not numbered) for mounting the TMR magnetic sensor chip. The vertical cross-sectional shapes of the two grooves of the present embodiment are all isosceles triangles, that is, each groove has two oppositely arranged inclined planes, and the two inclined planes are axisymmetric. Two grooves have 4 slopes in total: the first inclined plane 2 and the second inclined plane 3 are oppositely arranged and located in the first groove, and the third inclined plane 4 and the fourth inclined plane 5 are oppositely arranged and located in the second groove. First TMR magnetic sensor chip 7 sets up on first inclined plane 2, and second TMR magnetic sensor chip 9 sets up on fourth inclined plane 5, and two TMR magnetic sensor chips set up the height the same. By arranging the TMR magnetic sensor chip obliquely relative to the substrate, an included angle exists between the easy axis direction of the TMR magnetic sensor chip and the external magnetic field direction (the direction shown by an arrow 6 in fig. 1), so that a magnetic field component exists in the easy axis direction of the TMR magnetic sensor chip 7 by the external magnetic field, and the TMR magnetic sensor chip outputs voltage information related to the external magnetic field by sensing the component on the external magnetic field on the easy axis.
In order to improve the sensitivity of the sensor, the first TMR magnetic sensor chip 7 and the second TMR magnetic sensor chip 9 of the present embodiment are connected to form a push-pull full bridge circuit structure, and the resistance value of the first TMR magnetic sensor chip 7 and the resistance value of the second TMR magnetic sensor chip 9 have opposite variation trends with an external magnetic field. In order to form a full bridge circuit, the two TMR magnetic sensor chips are disposed in different recesses in this embodiment, but in other embodiments, the two TMR magnetic sensor chips may be disposed on opposite slopes of the same recess. In addition, except that the TMR magnetic sensor chip can be installed by adopting a groove inclined plane inclined towards the inside of the substrate 1, the TMR magnetic sensor chip can also be installed by adopting an inclined plane protruding towards the outside of the substrate, as long as the easy axis direction of the TMR magnetic sensor chip is inclined with the external magnetic field direction to be measured to form an included angle. The installation structure of the groove is adopted, so that the surface structure of the substrate is smooth, and the packaging is convenient. According to the invention, by changing the installation direction of the TMR magnetic sensor chip, when the TMR magnetic sensor chip works, the external magnetic field component is concentrated on the easy axis of the TMR sensing unit and the Z axis vertical to the easy axis and the hard axis, namely the Z axis is vertical to the plane where the easy axis and the hard axis are located. The TMR magnetic sensor chip provided on the substrate may be one or more, and when there are a plurality of TMR magnetic sensor chips, these magnetic sensor chips may be connected in a full bridge circuit structure or a half bridge circuit structure. The TMR magnetic sensor chip can be arranged on the same inclined plane or different inclined planes, and when the TMR magnetic sensor chip is arranged on the same inclined plane, the magnetic sensor chips are located at the same height.
The first and second grooves are filled with a first plastic package layer 12 and a second plastic package layer 13 respectively, which cover the first TMR magnetic sensor chip 7 and the second TMR magnetic sensor chip 9. The plastic packaging layer can be made of materials such as silica gel, silicon oxide and silicon nitride, and plays a role in filling and fixing. Preferably, the surface of the substrate 1 is covered with a metal layer 14, the metal layer 14 may be made of nonmagnetic metal or alloy, such as gold, titanium, etc., and the metal layer 14 plays a role of structural reinforcement and heat dissipation. A rewiring layer 17 is provided on the bottom surface of the substrate 1, and the rewiring layer 17 is electrically connected to the TMR magnetic sensor chip through the metal plug 15. The sensor external pads 18 are provided on the bottom surface of the redistribution layer 17, and in the present embodiment, a total of 8 sensor external pads 18 are provided. The number of sensor external pads 18 may be set as desired.
The following describes the preparation process of the TMR magnetic field sensor of this embodiment with reference to fig. 2 to 8:
as shown in fig. 2, first, a substrate 1 is provided, and a first groove and a second groove are processed on the surface of the substrate 1 by cutting, etching, and other processes, so as to form an inclined plane for mounting a TMR magnetic sensor chip, where an included angle between a first inclined plane 2 and a second inclined plane 3 is 90 °, and an included angle between a third inclined plane 4 and a fourth inclined plane 5 is 90 °; the inclination angle of the inclined plane, namely the included angle between the inclined plane and the surface (horizontal plane) of the substrate is not limited, and the included angle between two crossed inclined planes can be other angles;
as shown in fig. 3, a first TMR magnetic sensor chip 7 and a second TMR magnetic sensor chip 9 are respectively disposed on the first inclined plane 2 and the fourth inclined plane 5, the TMR magnetic sensor chip is prepared by magnetron sputtering, annealing, and the like, each magnetic sensor chip has a chip pad 8 (fig. 4); in the embodiment, a DAF film adhesive 11 is adopted to fix a first TMR magnetic sensor chip 7 and a second TMR magnetic sensor chip 9 on a first inclined plane 2 and a fourth inclined plane 5 respectively, and the two TMR magnetic sensor chips are arranged at the same height; the positive direction of the easy axis of the first TMR magnetic sensor chip 7 is made to go up or down along the first inclined plane 2 (figure 9), the positive direction of the easy axis of the second TMR magnetic sensor chip 9 is opposite to the positive direction of the easy axis of the first TMR magnetic sensor chip 7, if the positive direction of the easy axis of the first TMR magnetic sensor chip 7 goes down along the first inclined plane 2, the positive direction of the easy axis of the second TMR magnetic sensor chip 9 goes up along the fourth inclined plane 5, so that when an external magnetic field in the direction shown by an arrow 6 in figure 3 is applied, the resistance values of TMR magneto-resistance elements in the first TMR magnetic sensor chip 7 and the second TMR magnetic sensor chip 9 have opposite trends along with the change of the external magnetic field;
as shown in fig. 5, glue is filled in the first groove and the second groove to form a first plastic package layer 12 and a second plastic package layer 13, and then a metal layer 14 covering the surface of the pole piece 1 is formed on the surface of the substrate 1 by adopting processes such as deposition, electroplating and the like;
as shown in fig. 6, a through hole penetrating to a chip pad 8 of a TMR magnetic sensor chip is processed on the bottom surface of a substrate 1, the through hole can be prepared by processes such as dry etching, laser drilling, etc., a metal plug 15 is formed in the through hole by methods such as Physical Vapor Deposition (PVD), electroplating or chemical plating, etc., the metal plug 15 is used for realizing electrical connection between the TMR magnetic sensor chip and a heavy wiring layer, one end of the metal plug 15 is connected with the chip pad 8 of the TMR magnetic sensor chip, and the other end forms a plug pad 16 connected with the heavy wiring layer;
as shown in fig. 7, a rewiring layer 17 is formed on the bottom surface of the substrate 1 by adopting a rewiring technology, the rewiring layer 17 rewires the plug pads 16 and forms external connection pads 18, and the TMR magnetoresistive cells in the first TMR magnetic sensor chip 7 and the second TMR magnetic sensor chip 9 realize a circuit structure of push-pull full bridge connection through the chip pads 8, the metal plugs 15, the plug pads 16 and the rewiring layer 17;
cutting and injection molding are carried out on the substrate 1 to form the TMR magnetic field sensor, and the magnetic field sensor of the embodiment has 8 external connection pads (figure 8): 18-1, 18-2, 18-3, 18-4, 18-5, 18-6, 18-7 and 18-8, wherein 18-1, 18-2, 18-5 and 18-6 are empty pins, and 18-3, 18-5, 18-7 and 18-8 are respectively used for power supply and signal output of the TMR magnetic field sensor.
The working principle of the embodiment is as follows:
because the TMR magnetic sensor chip is disposed obliquely, there is an angle between the easy axis direction and the external magnetic field direction to be measured, taking the first TMR magnetic sensor chip as an example, as shown in fig. 9, the external magnetic field 6 will have a magnetic field component 28 in the easy axis direction (direction 29 in fig. 9) of the first TMR magnetic sensor chip 7, and another magnetic field component 27 in the Z axis direction (direction 26 in fig. 9), the first TMR magnetic sensor chip (the second magnetic sensor chip 9 is the same as above) outputs voltage information related to the external magnetic field by sensing the component of the external magnetic field in the easy axis direction, so as to achieve the purpose of extending the measurement magnetic field range. The TMR magnetic sensor chip has the advantages that the external magnetic field has no magnetic field component on the hard axis during measurement, the magnetic field change always only changes on the easy axis and the Z axis plane, and the linearity of the magnetic sensor chip can not be influenced by the magnetic field component on the Z axis, so that the problem that the linearity of the output of the magnetic sensor chip is poor due to the magnetic field component on the hard axis of the traditional TMR magnetic sensor chip is avoided, and the TMR magnetic sensor chip has smaller magnetic hysteresis and linearity. And by connecting the first TMR magnetic sensor chip 7 and the second TMR magnetic sensor chip 9 into a push-pull full-bridge circuit structure, the sensitivity is higher compared with a half-bridge structure.
Example 2
As shown in fig. 10, this embodiment is different from embodiment 1 in that: the second TMR magnetic sensor chip 9 is installed on the third inclined plane 4 of the substrate 1, the first TMR magnetic sensor chip 7 and the second TMR secondary long ampere new chip 9 are installed in a mutually reversed mode, the positive direction of the easy axis of the first TMR magnetic sensor chip 7 is opposite to the positive direction of the easy axis of the second TMR magnetic sensor chip 9, one positive direction of the easy axis is upward along the inclined plane, the other positive direction of the easy axis is downward along the inclined plane, the resistance values of TMR magneto-resistor elements in the first TMR magnetic sensor chip 7 and the second TMR magnetic sensor chip 9 change along with the external magnetic field in a reverse trend, TMR magneto-resistor units in the first TMR magnetic sensor chip 7 and the second TMR magnetic sensor chip 9 realize a circuit structure of push-pull full-bridge connection through a chip bonding pad, a metal plug, a plug bonding pad and. The preparation process and the working principle of the embodiment 1 and the embodiment 2 are the same, and the detailed description is omitted here.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
- A TMR magnetic field sensor, comprising: the TMR magnetic sensor comprises a substrate and one or more TMR magnetic sensor chips arranged on the substrate, and is characterized in that: the TMR magnetic sensor chip is obliquely arranged relative to the surface of the substrate, and an included angle exists between the easy axis direction of the TMR magnetic sensor chip and the direction of an external magnetic field to be measured.
- 2. The TMR magnetic field sensor according to claim 1, wherein: the TMR magnetic sensor chip comprises a substrate and is characterized in that a groove which is sunken inwards from the surface of the substrate is arranged on the substrate, the groove is provided with an inclined plane for fixing the TMR magnetic sensor chip, and a plastic packaging layer which covers the TMR magnetic sensor chip is filled in the groove.
- 3. The TMR magnetic field sensor according to claim 2, wherein: the vertical section of the groove is in the shape of an isosceles triangle or an isosceles trapezoid.
- 4. The TMR magnetic field sensor according to claim 1, wherein: be provided with first TMR magnetic sensor chip and second TMR magnetic sensor chip on the substrate, the easy axle positive direction of first TMR magnetic sensor chip with the easy axle positive direction of second TMR magnetic sensor chip is opposite, first TMR magnetic sensor chip and second TMR magnetic sensor chip connect into full-bridge circuit structure.
- 5. The TMR magnetic field sensor as claimed in claim 1 or 4, wherein: the bottom surface of the substrate is provided with a rewiring layer, the rewiring layer is connected with the TMR magnetic sensor chip through a metal plug penetrating from the bottom surface of the substrate to a chip bonding pad of the TMR magnetic sensor chip, and the bottom surface of the rewiring layer is provided with a sensor external bonding pad used for power supply and signal output of the TMR magnetic sensor.
- 6. The TMR magnetic field sensor according to claim 4, wherein: the substrate is provided with a first groove and a second groove which are inwards sunken from the surface of the substrate, the first groove is provided with a first inclined plane used for fixing the first TMR magnetic sensor chip, and the second groove is provided with a fourth inclined plane used for fixing the second TMR magnetic sensor chip.
- 7. The TMR magnetic field sensor according to claim 6, wherein: the first slope and the fourth slope are inclined at the same angle with respect to the substrate surface, or the first slope and the fourth slope are inclined at an angle different by 90 ° with respect to the substrate surface.
- 8. The TMR magnetic field sensor according to claim 1, wherein: also included is a metal layer overlying the substrate surface.
- 9. The TMR magnetic field sensor according to claim 1, wherein: when a plurality of TMR magnetic sensor chips are arranged on the substrate, all the TMR magnetic sensor chips are arranged at the same height.
- 10. The TMR magnetic field sensor according to claim 1, wherein: when the TMR magnetic sensor chip works, the magnetic field component of an external magnetic field in the easy axis direction of the TMR magnetic sensor chip is sensed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011454257.6A CN112557972A (en) | 2020-12-10 | 2020-12-10 | TMR magnetic field sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011454257.6A CN112557972A (en) | 2020-12-10 | 2020-12-10 | TMR magnetic field sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112557972A true CN112557972A (en) | 2021-03-26 |
Family
ID=75061571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011454257.6A Pending CN112557972A (en) | 2020-12-10 | 2020-12-10 | TMR magnetic field sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112557972A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102022211730A1 (en) | 2022-11-07 | 2024-05-08 | Robert Bosch Gesellschaft mit beschränkter Haftung | Method for manufacturing a magnetic sensor |
-
2020
- 2020-12-10 CN CN202011454257.6A patent/CN112557972A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102022211730A1 (en) | 2022-11-07 | 2024-05-08 | Robert Bosch Gesellschaft mit beschränkter Haftung | Method for manufacturing a magnetic sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6018093B2 (en) | Single package bridge type magnetic angle sensor | |
| JP5965924B2 (en) | Push-pull bridge magnetoresistive sensor | |
| JP6017461B2 (en) | Single package magnetoresistive angle sensor | |
| US9234948B2 (en) | Single-package bridge-type magnetic field sensor | |
| EP3088907B1 (en) | High-sensitivity push-pull bridge magnetic sensor | |
| JP6420821B2 (en) | Push-pull flip chip half-bridge magnetoresistive switch | |
| WO2015035912A1 (en) | Single-chip z-axis linear magnetic resistance sensor | |
| US20140035570A1 (en) | Single-chip push-pull bridge-type magnetic field sensor | |
| CN102969446B (en) | Semiconductor die package and method | |
| CN205720615U (en) | A kind of magnetic resistance sensor with bucking coil | |
| CN107479010A (en) | A kind of magnetic resistance sensor with bucking coil | |
| CN112557972A (en) | TMR magnetic field sensor | |
| US20130127454A1 (en) | Magnetic field sensor including an anisotropic magnetoresistive magnetic sensor and a hall magnetic sensor | |
| CN214252546U (en) | Novel TMR magnetic field sensor | |
| CN104051612B (en) | Single-chip tri-axis anisotropic magnetoresistive sensor and its manufacture method | |
| CN104422905A (en) | Magnetic sensor and preparation technology thereof | |
| CN114497356A (en) | Semiconductor chip, semiconductor packaging structure and manufacturing method thereof | |
| CN104459576B (en) | Magnetic sensing device and its magnetic strength induction method, the preparation technology of magnetic sensing device | |
| CN112130101A (en) | Optimized magnetoresistive sensor and magnetoresistive sensing structure | |
| CN203233390U (en) | Push-pull type half-bridge reluctance switch with overturning chips | |
| CN213337994U (en) | Optimized magnetoresistive sensor and magnetoresistive sensing structure | |
| CN113574403B (en) | Magnetic field sensor | |
| CN201681897U (en) | Non-base island multi-pin static releasing coil packing structure | |
| CN201752006U (en) | Encapsulation structure with base island and multiple circles of pins | |
| CN205580375U (en) | A tunnel junction magnetism resistance gear sensor chip for declining tooth pitch detects |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |