CN213337994U - Optimized magnetoresistive sensor and magnetoresistive sensing structure - Google Patents
Optimized magnetoresistive sensor and magnetoresistive sensing structure Download PDFInfo
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- CN213337994U CN213337994U CN202022371023.7U CN202022371023U CN213337994U CN 213337994 U CN213337994 U CN 213337994U CN 202022371023 U CN202022371023 U CN 202022371023U CN 213337994 U CN213337994 U CN 213337994U
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Abstract
The utility model relates to a sensor technical field especially relates to a magnetic resistance sensor and magnetic resistance sensing structure, wherein, include: the plane of the substrate is provided with at least one inclined groove, the inclined groove comprises two inclined planes, each inclined plane is provided with a plurality of magnetoresistive sensing units connected in series, and each magnetoresistive sensing unit is provided with a plurality of conductor units to form at least one bridge arm; the plurality of conductor units and the plurality of magneto-resistive-sensing units each extend to the plane of the base and the bottom plane of the slope. Has the advantages that: the magnetic component in the vertical direction and/or the magnetic component in the horizontal direction can be conveniently sensed, the problem of low sensitivity caused by inclined plane etching deviation when the inclined plane angle is larger can be solved, the process error is made up, the measurement precision of a magnetic field is improved, and the overall yield of a product is improved.
Description
Technical Field
The utility model relates to a sensor technology field especially relates to a magnetoresistive sensor and magnetic resistance sensing structure of optimizing.
Background
The magnetic resistance principle refers to that the self resistance value of the magnetic induction structure changes due to the strength and direction changes of a magnetic field in a space environment, and then the strength and direction of the magnetic field in the space environment can be measured according to the variation of the resistance value. Magnetic induction structures which are usually distributed in a plane can only measure the magnetic field component in the plane in which they are located, but do not sense the measurement of the magnetic field component perpendicular thereto.
In the prior art, a method is usually adopted in which a planar magnetoresistive chip is vertically erected on a package to detect a magnetic field component in a vertical direction, as shown in fig. 1, however, in the technical scheme, an angle error exists in a packaging process, a process routing is relatively complex, and the cost is high; the other method is that a vertical groove or an inclined groove is arranged on the surface of a chip, and can be integrated with an application-specific integrated circuit into a single-chip structure, or can be combined into a double-chip structure by packaging and routing, the core technology of the technical scheme is that the vertical groove or the inclined groove is arranged on the surface of the chip, and magnetoresistive materials and the like are distributed to detect the vertical component of a magnetic field, wherein the vertical groove is arranged on the surface of the chip, as shown in fig. 2, the defect is that the deposition rate of the magnetic material on the surface is greater than the deposition shrinkage rate on the side wall, so that the thickness of the side wall magnetoresistive is smaller than that of the surface magnetoresistive, the manufacturing process is limited, and the thickness of the magnetoresistive on the side wall is difficult to continue to; or, as shown in fig. 3, the inclined trench is disposed on the surface of the chip, and has a defect that if the angle of the inclined trench is small, the sensitivity of detecting the perpendicular magnetic resistance component is low, and if the angle of the inclined trench is large, the difficulty of the process is increased. Therefore, the above problems are difficult problems to be solved by those skilled in the art.
Disclosure of Invention
In view of the above problems in the prior art, an optimized magnetoresistive sensor and magnetoresistive sensing structure are provided.
The specific technical scheme is as follows:
the utility model provides an optimized magnetic resistance sensor, wherein, include:
the plane of the substrate is provided with at least one inclined groove, the inclined groove comprises two inclined planes, each inclined plane is provided with a plurality of magnetoresistive sensing units connected in series, and each magnetoresistive sensing unit is provided with a plurality of conductor units to form at least one bridge arm;
the plurality of conductor units and the plurality of magnetoresistive sensing units each extend to a plane of the base and a bottom plane of the slope.
Preferably, each of said inclined surfaces has an angle with said bottom plane in the range of 15 ° to 85 °.
Preferably, the included angle between each inclined surface and the plane of the substrate is in the range of 15-85 degrees.
Preferably, the angle between the magnetoresistive sensing unit and the conductor unit is in the range of 15-45 °.
Preferably, a magnetic resistance sensor for sensing only a vertical magnetic field component or only a horizontal magnetic field component is obtained by changing the orientation angle of the conductor unit, the initial magnetization direction and/or the current direction of the magnetic resistance sensing unit, and the positions of the conductor unit and the magnetic resistance sensing unit on the inclined plane.
Preferably, the bridge arm connections are in the form of wheatstone bridges.
The utility model also provides an optimized magnetic resistance sensing structure, wherein, including a plurality of as above-mentioned magnetic resistance sensor, magnetic resistance sensing structure includes:
the plurality of first direction sensors are distributed in the plane and/or the inclined plane of a substrate to detect the magnetic field component in the first direction; and/or
A plurality of second direction sensors distributed in the plane and/or the inclined plane of the substrate to detect magnetic field components in a second direction; and/or
And a plurality of third direction sensors distributed in the inclined plane to detect components of the magnetic field in a third direction.
Preferably, the first direction sensor is an X-axis sensor, the second direction sensor is a Y-axis sensor, and the third direction sensor is a Z-axis sensor.
Preferably, a single chip is formed with an application specific integrated circuit process and a CMOS circuit; or
And forming a multi-chip with the CMOS chip by a packaging integration process.
The technical scheme has the following advantages or beneficial effects: the magnetic resistance sensor is formed by arranging a plurality of series-connected magnetic resistance sensing units and a plurality of conductor units on the inclined plane of the inclined groove, and the plurality of series-connected magnetic resistance sensing units and the plurality of conductor units extend to the plane of the substrate and the bottom plane of the inclined plane, so that the problem of low sensitivity caused by inclined plane etching deviation when the angle of the inclined plane is larger can be solved, the measurement precision of a magnetic field is improved, and the stability of the process and the overall yield of products are improved.
Drawings
Embodiments of the present invention will now be described more fully hereinafter with reference to the accompanying drawings. The drawings are, however, to be regarded as illustrative and explanatory only and are not restrictive of the scope of the invention.
Fig. 1 is a schematic structural diagram of a vertical magnetic resistance component of a prior art detection chip according to the present invention;
fig. 2 is a schematic structural diagram of another prior art vertical direction magnetic resistance component of the chip detected by setting a vertical trench according to the present invention;
FIG. 3 is a schematic diagram of another prior art structure for detecting a vertical magnetic resistance component of a chip by providing an inclined groove according to the present invention;
fig. 4 is a schematic structural diagram of a magnetoresistive sensor according to an embodiment of the present invention;
fig. 5 is a schematic diagram of the magnetic sensing unit and the conductor unit distributed on both sides of the inclined groove according to the embodiment of the present invention;
fig. 6 is a schematic view illustrating magnetization simulation of the magnetic resistance sensing unit on the inclined plane by an external detection magnetic field according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a first directional sensor and a third directional sensor of a magnetoresistive sensing structure according to an embodiment of the invention;
fig. 8 is a schematic diagram of a second directional sensor and a third directional sensor of a magnetoresistive sensing structure according to an embodiment of the invention;
fig. 9 is a schematic diagram of a first direction sensor of a magnetoresistive sensing structure according to an embodiment of the invention;
fig. 10 is a schematic diagram of a second direction sensor of a magnetoresistive sensing configuration according to an embodiment of the invention;
fig. 11 is a schematic structural diagram of a magnetoresistive sensing structure according to an embodiment of the present invention;
fig. 12 is another schematic structural diagram of a magnetoresistive sensing structure according to an embodiment of the invention.
The above reference numerals denote descriptions:
a substrate 1; the inclined groove 2; a bevel 20; a bottom plane 200; a magnetoresistive sensing unit 3; a conductor unit 4.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that, in the present invention, the embodiments and features of the embodiments may be combined with each other without conflict.
The present invention will be further described with reference to the accompanying drawings and specific embodiments, but the present invention is not limited thereto.
The utility model provides a magnetic resistance sensor, wherein, combine and show 4-6, include:
the magnetic sensor comprises a substrate 1, wherein at least one inclined groove 2 is arranged on the plane of the substrate 1, the inclined groove 2 comprises two inclined planes 20, each inclined plane 20 is provided with a plurality of magnetoresistive sensing units 3 connected in series, and each magnetoresistive sensing unit 3 is provided with a plurality of conductor units 4 to form at least one bridge arm;
the plurality of conductor elements 4 and the plurality of magneto resistive sensing elements 3 each extend to the plane 10 of the base 1 and the bottom plane 200 of the ramp 20.
In this embodiment, an inclined groove 2 is disposed on the plane of the substrate 1, a plurality of series-connected magnetoresistive sensing units 3 and a plurality of series-connected conductor units 4 are distributed on the inclined plane 20 of the inclined groove 2, and the plane of the substrate 1 and the bottom plane 200 of the inclined plane 20 connected to both ends of the inclined plane 20, so that the magnetoresistive sensing units 3 and the conductor units 4 on the inclined plane 20 can convert the magnetic field part in the vertical direction into the plane of the substrate 1 and the bottom plane 200, and the signals after the conversion of the part are measured by the magnetoresistive sensing units 3 and the conductor units 4 located in the plane of the substrate 1 and the bottom plane 200, so as to increase the sensitivity for detecting the magnetic component in the vertical direction, sense and sense the magnetic component in the vertical direction and/or the magnetic component in the horizontal direction, thereby reducing the problem of sensitivity reduction caused by the etching deviation of the inclined plane when the angle of the inclined plane is larger, making up the process error, and the overall yield of the product is improved.
In addition, it should be noted that, through simulation analysis, the sensitivity is increased by about 30% by the structure in which the magneto-resistive sensing unit 3 and the conductor unit 4 are distributed on the slope 20 of the inclined trench 2, and the plane of the base 1 connected to both ends of the slope 20 and the bottom plane 200 of the slope 20, compared with the structure in which the magneto-resistive sensing unit 3 and the conductor unit 4 are distributed only on the slope.
In a preferred embodiment, each ramp is angled in the range of 15-85 ° from the plane of the base.
Specifically, in the present embodiment, the angle between each inclined surface 20 and the bottom plane 200 may be set to be in the range of 15 ° to 85 °.
In a preferred embodiment, each bevel 20 is angled in the range of 15-85 ° relative to the plane of the substrate 1.
Specifically, in the present embodiment, the angle between each inclined surface 20 and the plane of the base 1 may be set in the range of 15 ° to 85 °.
In a preferred embodiment, the magnetoresistive sensing unit 3 is angled with respect to the conductor unit 4 in the range of 15-45.
Specifically, in this embodiment, an included angle between the magnetoresistive sensing unit 3 and the conductor unit 4 is set to about 45 °, so that an included angle between a current direction on the magnetoresistive sensing unit 3 and an initial magnetization direction thereof is 45 ° or 135 °, thereby obtaining an optimal linear measurement range and improving measurement accuracy of a magnetic field.
In a preferred embodiment, only the perpendicular magnetic field component of the substrate is sensed by changing the orientation angle of the conductor unit 4, the initial magnetization direction and/or current direction of the magneto-resistive sensing unit 3, and the positions of the conductor unit 4 and the magneto-resistive sensing unit 3 on the inclined plane 20; or
Only the horizontal direction magnetic field component of the bottom plane of the substrate or the inclined plane is sensed.
Specifically, at least one bridge arm formed by a plurality of magnetoresistive sensing units 3 and a plurality of conductor units 4 connected in series in the above technical solution is respectively arranged on two sides of a slope 20 with a tilt angle of 15 ° to 85 °, and in a plane of the substrate 1 and a bottom plane 200 of the slope 20 connected to two ends of the slope 20, and an orientation angle of the conductor unit 4, an initial magnetization direction and \ or a current direction of the magnetoresistive sensing unit 3, and positions of the conductor units 4 and the magnetoresistive sensing units 3 on the slope 20 are simultaneously changed, so that the bridge arm formed by the plurality of magnetoresistive sensing units 3 and the plurality of conductor units 4 connected in series only measures a vertical magnetic field component of the substrate 1 and \ or only measures a horizontal magnetic field component in the plane of the substrate 1, as shown in fig. 7 and 8.
In a preferred embodiment, the bridge arm connections are in the form of Wheatstone bridges.
Specifically, at least one bridge arm formed by a plurality of magnetoresistive sensing units 3 and a plurality of conductor units 4 connected in series in the above technical solution may be connected to form a wheatstone bridge.
The utility model also provides an optimized magnetic resistance sensing structure, wherein, including a plurality of as foretell magnetic resistance sensors, magnetic resistance sensing structure includes:
a plurality of first direction sensors distributed in the plane of a substrate 1 and/or in a slope 20 to detect magnetic field components in a first direction; and/or
A plurality of second direction sensors distributed in the plane of the substrate 1 and/or in the inclined plane 20 to detect magnetic field components in a second direction; and/or
And a plurality of third direction sensors distributed in the slope 20 to detect components of the magnetic field in the third direction.
Specifically, in the present embodiment, the bridge arm formed by the plurality of magnetoresistive sensing units 3 and the plurality of conductor units 4 arranged in the horizontal direction in the plane and/or the bottom plane 200 of the base body 1 only measures the horizontal magnetic field component in the plane of the base body 1, as shown in the first direction sensor and the second direction sensor in fig. 9 and 10.
In the present embodiment, as shown in fig. 7-10, a single/multiple axis magnetoresistance sensing structure can be formed by disposing the first direction sensor, the second direction sensor and the third direction sensor formed by the plurality of magnetoresistance sensing units 3 and the plurality of conductor units 4 connected in series on the same substrate 1, as shown in fig. 11, the first direction sensor and the second direction sensor are respectively distributed in the plane of the substrate 1 to sense the magnetic field component in the horizontal direction, the third direction sensor is distributed on the inclined groove 2 and extends into the plane of the substrate 1 and/or the bottom plane 200 of the inclined plane 20, and at least one set of the third direction sensors can be used to sense the magnetic field component in the vertical direction; as shown in fig. 12, the first direction sensor, the second direction sensor and the third direction sensor are distributed on the inclined groove 2 and extend into the plane of the substrate 1 or the bottom plane 200 of the inclined plane 20 to sense the magnetic field components in the horizontal and vertical directions.
In a preferred embodiment, the magnetoresistive sensing structures shown in FIGS. 11 and 12 are formed as a single chip with an ASIC process and CMOS circuitry or as multiple chips with a CMOS chip by a package IC process. In addition, the first direction sensor in the above technical scheme is an X-axis sensor, the second direction sensor is a Y-axis sensor, and the third direction sensor is a Z-axis sensor.
The technical scheme has the following advantages or beneficial effects: the single-shaft or multi-shaft magnetic resistance sensor is formed by arranging the plurality of series-connected magnetic resistance sensing units and the plurality of conductor units on the inclined plane of the inclined groove, and the plurality of series-connected magnetic resistance sensing units and the plurality of conductor units extend to the plane of the base body and the bottom plane of the inclined plane, so that the problem of low sensitivity caused by inclined plane etching deviation when the angle of the inclined plane is larger can be solved, the process error is made up, the measurement precision of a magnetic field is improved, and the overall yield of products is improved.
The above description is only an example of the preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and those skilled in the art should be able to realize the equivalent alternatives and obvious variations of the present invention.
Claims (9)
1. An optimized magnetoresistive sensor, comprising:
the plane of the substrate is provided with at least one inclined groove, the inclined groove comprises two inclined planes, each inclined plane is provided with a plurality of magnetoresistive sensing units connected in series, and each magnetoresistive sensing unit is provided with a plurality of conductor units to form at least one bridge arm;
the plurality of conductor units and the plurality of magnetoresistive sensing units each extend to a plane of the base and a bottom plane of the slope.
2. A magnetoresistive sensor as in claim 1 wherein each of the slopes has an angle in a range of 15 ° to 85 ° with respect to the bottom plane.
3. A magnetoresistive sensor as in claim 1 wherein each of the angled surfaces is at an angle in the range of 15 ° to 85 ° with respect to the plane of the substrate.
4. A magnetoresistive sensor as in claim 1 wherein the magnetoresistive sensing cell is angled with respect to the conductor cell in a range of 15 ° -45 °.
5. A magnetoresistive sensor according to claim 1, characterized in that only the perpendicular-direction magnetic field component of the substrate is sensed by changing the orientation angle of the conductor unit, the initial magnetization direction and/or the current direction of the magnetoresistive sensing unit and the position of the conductor unit and the magnetoresistive sensing unit on the slope; or
Only the horizontal direction magnetic field component of the bottom plane of the substrate or the inclined plane is sensed.
6. Magnetoresistive sensor according to claim 1, characterized in that the bridge arm connections are in the form of a wheatstone bridge.
7. An optimized magnetoresistive sensing structure comprising a plurality of magnetoresistive sensors according to any of claims 1-6 above, the magnetoresistive sensing structure comprising:
the plurality of first direction sensors are distributed in the plane and/or the inclined plane of a substrate to detect the magnetic field component in the first direction; and/or
A plurality of second direction sensors distributed in the plane and/or the inclined plane of the substrate to detect the magnetic field component in a second direction; and/or
And a plurality of third direction sensors distributed in the inclined plane to detect components of the magnetic field in a third direction.
8. A magnetoresistive sensing structure as in claim 7 wherein the first direction sensor is an X-axis sensor, the second direction sensor is a Y-axis sensor, and the third direction sensor is a Z-axis sensor.
9. The structure of claim 7, wherein the structure is formed in a single chip with an asic process and CMOS circuitry; or
And forming a multi-chip with the CMOS chip by a packaging integration process.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022371023.7U CN213337994U (en) | 2020-10-22 | 2020-10-22 | Optimized magnetoresistive sensor and magnetoresistive sensing structure |
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| CN202022371023.7U CN213337994U (en) | 2020-10-22 | 2020-10-22 | Optimized magnetoresistive sensor and magnetoresistive sensing structure |
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| CN213337994U true CN213337994U (en) | 2021-06-01 |
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| GR01 | Patent grant | ||
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Address after: Room 307, 3rd floor, 1328 Dingxi Road, Changning District, Shanghai 200050 Patentee after: Shanghai Sirui Technology Co.,Ltd. Address before: Floor 1, building 2, No. 235, Chengbei Road, Jiading District, Shanghai, 201800 Patentee before: QST Corp. |
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| CP03 | Change of name, title or address | ||
| CB03 | Change of inventor or designer information |
Inventor after: Guo Huifang Inventor after: Qiu Jin Inventor before: Guo Huifang |
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| CB03 | Change of inventor or designer information |