CN214176058U - High-voltage insulation LED chip - Google Patents

Abstract

The utility model provides a high-voltage insulation LED chip, substrate (13) of wafer (1) adopt insulating material, just adorn and set up in wafer window (21) of wafer carrier plate (2), circuit (3) and lead wire pad (31), power input pad (32) or power input lead wire dish (33) all set up at wafer carrier plate (2) leading flank, lead wire pad (31) are direct to be connected with electrode pad (12) of wafer, whole border gap (22) between wafer (1) and wafer window (21) are filled with insulating glue (81) that dielectric strength is greater than 1500V, realize encapsulating chip high-voltage insulation, simple structure, with low costs height.

Description

High-voltage insulation LED chip

Technical Field

The utility model belongs to the technical field of the LED, in particular to packaging structure of LED wick.

Background

In the existing LED chip packaging, no matter a chip containing a single wafer or a module chip containing a plurality of wafers, the problem of realizing high-voltage insulation in the LED chip packaging is not considered, and a scheme for solving the contradiction between the high-voltage insulation and the heat transfer is lacked; in addition, the supports manufactured by hardware stamping and injection molding processes are required, and the packaging process comprises the processes of die bonding, dispensing, routing and the like one by one, so that the efficiency is low and the cost is high.

Disclosure of Invention

The utility model aims at providing a brand-new simple structure, its production efficiency is high, and is with low costs to LED chip package, realized high-voltage insulation in LED chip package.

The technical scheme of the utility model: the LED chip comprises a wafer and a wafer carrier, wherein the substrate of the wafer is made of an insulating material (such as sapphire); the wafer bearing sheet is made of an insulating sheet material and is provided with a wafer window, the wafer is arranged in the wafer window, and the working layer of the wafer faces forwards (also called as a forward mounting structure); the chip bearing sheet is provided with a circuit, the circuit is provided with a lead bonding pad, the lead bonding pad is close to an electrode bonding pad on the chip, and the lead bonding pad is directly welded and communicated with the electrode bonding pad on the chip through a lead or solder; the front side surface of the wafer bearing sheet is provided with a power input bonding pad or a power input lead plate or a power input terminal; the whole peripheral gap between the wafer and the wafer window is filled with insulating sealant, so as to form an insulating sealing structure with the front and rear side insulating strength of the whole peripheral gap larger than 1500V (direct current voltage DC).

The chip carrier is preferably made of high temperature resistant polyester film, the circuit on the chip carrier is usually printed circuit, several chips are spliced to form a chip carrier splicing board, and the chip positioning splicing board is made by printed circuit process. The utility model discloses do not have the support that the five metals punching press and the technology of moulding plastics made, the substrate of wafer is utilized in high-voltage insulation.

The utility model discloses well illumination direction definition of LED wafer is preceding, and the opposite is the back.

Drawings

The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown and described, and in which embodiments of the invention are shown by way of illustration, and not by way of limitation.

Fig. 1 is a schematic diagram of a characteristic profile of an LED chip according to the present invention, showing the basic features of the present invention.

Fig. 2 is a schematic plan view of the rear side of an LED chip according to the present invention.

Fig. 3-5 are schematic diagrams of characteristic profiles of three LED chips according to the present invention.

Fig. 6 to 9 are schematic characteristic cross-sectional views of four LED chips of the present invention having a plurality of wafers, respectively.

FIGS. 10 and 11 are schematic views showing two different features of the wafer carrier plate assembly of the present invention.

In the figure: 1. the chip comprises a chip, 11, an operating layer, 12, electrode pads, 13, a substrate, 14, a heat conducting pad, 2, a chip carrier, 21, a chip window, 22, a gap, 201, a chip carrier splicing plate, 3, a circuit, 31, a lead pad, 32, a power input pad, 33, a power input lead pad, 34, a power input window, 35, a power input terminal, 36, an IC, 37, an insulating edge, 4, a lead, 5, front sealing glue, 51, a front gasket, 511, a window, 6, solder, 7, a light transmitting sheet, 71, a lens plate, 72, a lens, 81, insulating sealing glue, 82, glue, 9, a fixing pad, 10, a metal heat conducting sheet, 101, a screw hole, 102, a connecting terminal, 103 and a screw.

Detailed Description

In the LED chip of the present invention shown in fig. 1, the substrate 13 of the wafer 1 is made of an insulating material (such as sapphire); the wafer 1 is arranged in the wafer window 21 of the wafer bearing sheet 2, the working layer 11 of the wafer 1 faces forwards, the thickness of the wafer bearing sheet 2 is equivalent to that of the wafer 1 (the thickness of the wafer 1 can be larger than or equal to or smaller than that of the wafer bearing sheet 2), the wafer bearing sheet 2 is provided with a circuit 3, the circuit 3 is provided with a lead bonding pad 31, and the electrode bonding pad 12 on the wafer 1 is welded and communicated with the lead bonding pad 31 close to the electrode bonding pad by adopting a lead 4; the front side of the wafer 1 and the wires 4, the lead pads 31 and part of the circuits 3 are covered by a front encapsulation 5, and fluorescent materials can be added into the front encapsulation 5: two power input bonding pads 32 are arranged on the front side surface of the wafer bearing sheet 2, the power input bonding pads 32 are communicated with the circuit 3, the electricity for driving the wafer 1 to work by light emitting is input through the power input bonding pads 32, and generally, the power input is realized by welding a lead with the power input bonding pads 32. The back side of the wafer 1 can be directly attached to a metal heat sink by soldering or bonding (a heat conductive adhesive, such as silver adhesive).

It is shown that the gap 22 between the wafer 1 and the wafer window 21 is filled with the insulating paste 81, and in connection with fig. 2, the entire peripheral gap 22 between the wafer 1 and the wafer window 21 is filled with the insulating paste 81, so as to form an insulating sealing structure on the front and rear sides of the entire peripheral gap 22, and the insulating strength of the insulating sealing structure should be greater than 1500V (direct current voltage DC). The thickness of the wafer 1 should be greater than 0.15 mm.

In the LED chip of the present invention shown in fig. 3, the lead pad 31 on the wafer carrier 2 and the electrode pad 12 on the wafer close to the lead pad are directly connected to each other by soldering material 6 (such as tin or conductive adhesive); the shortest distance B between the power input pads 32 and the outer edge of the wafer carrier 2, here called the insulating edge 37, should be greater than 4mm, preferably greater than 6 mm.

The LED chip of the present invention shown in fig. 4 is different from that shown in fig. 1 in that: the front side of the wafer carrier 2 is pasted with a front gasket 51 through an adhesive 82, the front gasket 51 is made of an insulating material, the front gasket 51 is provided with a window 511, light emitted by the wafer 1 is emitted through the window 511, and a front sealing adhesive 5 is arranged in the window 511; the front pad 51 is also opened with a power input window 34 so that the power input pad 32 is exposed.

The LED chip of the present invention shown in fig. 5 is different from that shown in fig. 3 in that: 1) the front side surface of the wafer bearing sheet 2 is pasted with a light-transmitting sheet 7 through an adhesive 82, the light-transmitting sheet 7 is made of an insulating material, the wafer 1 is covered by the light-transmitting sheet 7, no front adhesive is used, and the light-transmitting sheet 7 can be designed to be provided with a fluorescent material; the light-transmitting sheet 7 is provided with a power input window 34 so that the power input pad 32 is exposed. The outer edge of the light transmissive sheet 7 is larger than the wafer carrier 2, and thus, the insulating edge 37 is the outer edge of the light transmissive sheet 7; 2) the back side of the wafer 1 is provided with a heat conducting bonding pad 14, the back sides of the wafer 1 and the wafer bearing sheet 2 are adhered with a metal heat conducting sheet 10, the back side of the wafer 1 is welded with the metal heat conducting sheet 10 through the heat conducting bonding pad 14, and the heat of the LED chip is transmitted out through the heat conducting bonding pad. The metal heat conducting strip 10 is generally made of copper material, aluminum material, or copper-aluminum composite material.

Fig. 6 shows an LED chip of the present invention, which includes a plurality of chips 1, wherein a heat conducting pad 14 is disposed on a rear side surface of each chip 1; the back side of the wafer carrier 2 is provided with a fixed bonding pad 9, the fixed bonding pad 9 can be designed into a plurality of point-like or linear shapes, and the fixed bonding pad 9 surrounds the wafer in a circle, namely, the fixed bonding pad 9 can adopt a structure that the fixed bonding pad surrounds the wafer 1 in a circle. If the anchor pads 9 are continuous in shape and are continuous around the wafer, the back side of the wafer 1 is sealed off after the anchor pads 9 are soldered (e.g., soldered) to the heat sink member (e.g., heat conductive plate) of the LED chip. The figure shows that three wafers 1 are arranged in a wafer carrier 2, and the wafer carrier 2 can be designed to be provided with a plurality of (not less than two) wafer windows to form an LED module chip containing a plurality of wafers.

Fig. 7 shows an LED chip of the present invention, which includes a plurality of chips 1, wherein an IC 36 is disposed on the front side of the chip carrier 2 for driving/controlling the chip 1; the front side of the wafer carrier 2 is provided with a power input terminal 35 for inputting power, and the front side of the wafer carrier 2 must be provided with a power input pad 32 by providing the power input terminal 35.

In the LED chip of the present invention shown in fig. 8, the power input end of the chip is connected to the power input lead pad 33 by a power input lead pad 33, and the wiring terminal 102 with a wire is connected to the power input lead pad 33 by a screw 103 (shown by a dotted line); in the figure, a metal heat conducting sheet 10 is adhered to the back side surfaces of the wafer 1 and the wafer carrier 2, a screw hole 101 is arranged on the metal heat conducting sheet 10, the LED chip can be mounted and fixed through the screw hole 101, and the screw hole 101 can be designed into an open slot shape (as shown by the screw hole 101 on the left side in the figure).

In the LED chip of the present invention shown in fig. 9, a lens plate 71 containing a plurality of lenses 72 is attached to the front side of the wafer (1) and the wafer carrier 2 by adhesive (the adhesive is not shown in the figure), and the front side of the wafer 1 and the solder 6 are covered by the lens plate 71. The lenses 72 in the figure are of a condensing type, one lens 72 being provided per wafer 1. The lens 72 may be designed in other shapes (for example, an astigmatic type) as necessary, or may be shared by a plurality of wafers 1. The lens plate 71 may be designed with a fluorescent material.

Fig. 10 and 11 show two kinds of the jointed wafer carrier plates in the production process of the present invention, fig. 9 shows that the LED chip contains a single wafer, and the wafer carrier plates 2 are arranged in an array in the jointed wafer carrier plate 201. After the chip is arranged in the chip window process, the connection welding process of the lead bonding pad and the electrode bonding pad, the testing process, the glue sealing process and the like are finished, the required LED chip can be obtained by cutting according to the dotted line in the figure. The jointed board of the chip bearing piece is manufactured by adopting a printed circuit process, the chip window 21 adopts a punching process, the efficiency is high, the cost is low, the lead bonding pad and the electrode bonding pad are connected by adopting a solder for welding, and the process without gold wires is realized.

Fig. 11 shows a wafer carrier plate for an LED module chip having a plurality of wafers, one wafer carrier 2 having 6 wafer windows 21 therein, and dotted lines indicating cutting lines of the wafer carrier 2.

The circuit 3 on the wafer carrier 2 of the present invention may be in a simple block shape, may also be in a slender shape, and may also be in a bent shape, and the circuit in fig. 10 should adopt a simple block shape.

In order to improve the light-emitting rate, a reflective film is disposed on the outer surface of the wafer carrier to reflect the light reflected to the surface of the wafer carrier.

Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.

Claims (10)

1. An LED chip comprises a wafer (1) and a wafer bearing sheet (2), and is characterized in that: the substrate (13) of the wafer (1) is made of an insulating material; the wafer bearing sheet (2) is made of an insulating sheet material and is provided with a wafer window (21), the wafer (1) is arranged in the wafer window (21), and the working layer (11) of the wafer (1) faces forwards; the front side surface of the wafer bearing sheet (2) is provided with a circuit (3), the circuit (3) is provided with a lead bonding pad (31), and the lead bonding pad (31) is directly welded and communicated with the electrode bonding pad (12) through a lead (4) or a solder (6); the front side surface of the chip bearing sheet (2) is provided with a power input bonding pad (32), a power input lead plate (33) or a power input terminal (35); the whole peripheral gap (22) between the wafer (1) and the wafer window (21) is filled with insulating sealant (81), and an insulating sealing structure with the front and rear side insulating strength of the whole peripheral gap (22) larger than 1500V is formed.

2. The LED chip of claim 1, wherein: the thickness of the substrate (13) of the wafer (1) is greater than 0.15 mm.

3. The LED chip of claim 1, wherein: the shortest distance B between the power input pad (32) and the insulating edge (37) is greater than 4 mm.

4. The LED chip of claim 1, wherein: the rear side of the wafer (1) is provided with a heat conducting pad (14).

5. The LED chip of claim 4, wherein: the back side of the wafer bearing sheet (2) is provided with a fixed welding disc (9).

6. The LED chip of claim 5, wherein: the fixed bonding pad (9) is configured to surround the wafer (1) in a circle.

7. The LED chip of claim 1 or 2 or 3 or 4 or 5 or 6, wherein: a light transmitting sheet (7) or a lens plate (71) is attached to the front side surfaces of the wafer (1) and the wafer carrier (2) by an adhesive (82).

8. The LED chip of claim 1 or 2 or 3 or 4 or 5 or 6, wherein: a front pad (51) is attached to the front side of the wafer carrier (2) through an adhesive (82), and a window (511) is formed in the front pad (51).

9. The LED chip of claim 1 or 2 or 3 or 4 or 5 or 6, wherein: the front side of the chip bearing sheet (2) is provided with an IC (36).

10. The LED chip of claim 1 or 2 or 3 or 4 or 5 or 6, wherein: the rear side surfaces of the wafer (1) and the wafer bearing sheet (2) are adhered with metal heat conducting sheets (10), and the metal heat conducting sheets (10) are provided with screw holes (101).

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