CN214168179U - Vacuum tank device of TSV electroplating equipment - Google Patents
Vacuum tank device of TSV electroplating equipment Download PDFInfo
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- CN214168179U CN214168179U CN202023284771.8U CN202023284771U CN214168179U CN 214168179 U CN214168179 U CN 214168179U CN 202023284771 U CN202023284771 U CN 202023284771U CN 214168179 U CN214168179 U CN 214168179U
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- tank
- pipeline
- liquid storage
- storage tank
- electroplating
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Abstract
The utility model discloses a TSV electroplating equipment vacuum tank device, which comprises a tank body, a first pipeline and a second pipeline, wherein one side of the tank body is provided with a vacuum pump and a liquid storage tank, two ends of the first pipeline are respectively connected with the vacuum pump and the tank body, one end of the second pipeline extends into the liquid storage tank, the other end of the second pipeline extends into the tank body, one side of the liquid storage tank is provided with a pressure mechanism, and the pressure mechanism is connected with the liquid storage tank through a third pipeline; a material rack is arranged in the groove body, a rotary power mechanism is arranged on the outer side of the groove body, and the rotary power mechanism is in transmission connection with the material rack through a transmission mechanism. The utility model discloses can make semiconductor workpiece be the slope form through rotatory work or material rest, then by the leading-in plating solution of cell body bottom, the slow submergence semiconductor workpiece of the ascending in-process of plating solution liquid level, the hole slope on the semiconductor workpiece, during the entering hole that the plating solution can be level and smooth, prevent to remain the bubble, simultaneously, through the vacuum pump extraction cell body air, make cell body internal gas pressure reduce, during the plating solution gets into the cell body more easily, also fill up the hole more easily.
Description
Technical Field
The utility model relates to a semiconductor electroplating process technical field, concretely relates to vacuum tank device of TSV electroplating equipment.
Background
In the process of semiconductor processing, a metal layer is plated on the surface of a semiconductor by an electroplating process, wherein a semiconductor workpiece is electrically connected with a cathode, an electroplating sheet (such as a copper sheet) is electrically connected with an anode, the semiconductor workpiece and the electroplating sheet are placed into an electroplating bath filled with electroplating solution, and the electroplating is finished by electrifying a direct current and standing for a moment.
The existing electroplating bath is a common top-opening bath body, electroplating solution is filled in the electroplating bath in advance, a semiconductor workpiece is vertically placed into the electroplating bath during electroplating, and the electroplating bath has the defects that bubbles are easily remained in holes when the semiconductor workpiece with the holes is electroplated, so that the electroplating solution cannot be completely contacted with the inner walls of the holes, and electroplating blind areas exist on the inner walls of the holes.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a TSV electroplating device vacuum tank device.
In order to realize the purpose of the utility model, the utility model adopts the following technical scheme:
a vacuum groove device of TSV electroplating equipment comprises a groove body, a first pipeline and a second pipeline, wherein a vacuum pump and a liquid storage tank are arranged on one side of the groove body, one end of the first pipeline is connected with the vacuum pump, the other end of the first pipeline extends into the groove body from the upper side to extract air in the groove body, one end of the second pipeline extends into the liquid storage tank, the other end of the second pipeline extends into the groove body from the bottom and is used for inputting electroplating liquid from the bottom of the groove body, a pressure mechanism is arranged on one side of the liquid storage tank to press the electroplating liquid in the liquid storage tank into the groove body, and the pressure mechanism is connected with the liquid storage tank through a third pipeline;
the semiconductor device is characterized in that a material rack is arranged in the groove body to fix the semiconductor workpiece, and a rotary power mechanism is arranged on the outer side of the groove body and is in transmission connection with the material rack through a transmission mechanism to drive the material rack to rotate.
As a further improved technical scheme of the utility model, the liquid storage pot still is connected with the fluid infusion pipe, be equipped with the relief valve on the liquid storage pot.
As a further improved technical proposal of the utility model, the pressure mechanism is a high-pressure gas tank.
As a further improved technical solution of the present invention, the rotary power mechanism is a motor.
As a further improved technical scheme of the utility model, the drive mechanism is gear drive mechanism.
As a further improved technical scheme of the utility model, the bottom of the groove body is connected with a liquid discharge pipe.
Compared with the prior art, the utility model discloses a technological effect lies in:
the utility model discloses can make the semiconductor work piece be the slope form through rotatory work or material rest, then by the leading-in plating solution of cell body bottom, the ascending in-process of plating solution liquid level slowly submerges the semiconductor work piece, the hole slope on the semiconductor work piece, the plating solution can be in the smooth entering hole, prevent to remain the bubble, plating solution and the abundant contact of hole inner wall avoid the hole inner wall to produce and electroplate the blind area, simultaneously, through the vacuum pump extraction internal air of cell, make the internal gas pressure of cell body reduce, the plating solution gets into the cell body more easily, also fill up the hole more easily.
Drawings
FIG. 1 is a schematic structural diagram of a vacuum tank device of a TSV electroplating apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional structural view of a semiconductor workpiece with holes.
Detailed Description
The present invention will be described in detail below with reference to specific embodiments shown in the drawings. However, these embodiments are not intended to limit the present invention, and structural, methodical, or functional changes that may be made by one of ordinary skill in the art based on these embodiments are all included in the scope of the present invention.
Referring to fig. 1 to 2, a vacuum tank device for TSV electroplating equipment comprises a tank body 1, a first pipeline 2 and a second pipeline 3, wherein a vacuum pump 4 and a liquid storage tank 5 are arranged on one side of the tank body 1, one end of the first pipeline 2 is connected with the vacuum pump 4, the other end of the first pipeline 2 extends into the tank body 1 from the upper side to extract air in the tank body 1, one end of the second pipeline 3 extends into the liquid storage tank 5, the other end of the second pipeline 3 extends into the tank body 1 from the bottom to input electroplating solution from the bottom of the tank body 1, a pressure mechanism 6 is arranged on one side of the liquid storage tank 5 to press the electroplating solution in the liquid storage tank 5 into the tank body 1, and the pressure mechanism 6 is connected with the liquid storage tank 5 through a third pipeline 7;
the semiconductor processing device is characterized in that a material rack 8 is arranged in the groove body 1 to fix a semiconductor workpiece 9, a rotary power mechanism 10 is arranged on the outer side of the groove body 1, and the rotary power mechanism 10 is in transmission connection with the material rack 8 through a transmission mechanism to drive the material rack 8 to rotate.
It should be noted that one end of the first pipeline 2 extending into the tank body 1 is located at the top of the tank body 1, and is not contacted with the electroplating solution all the time in the electroplating process.
Air in the groove body 1 is sucked through the vacuum pump 4, so that air pressure in the groove body 1 is reduced, electroplating liquid can conveniently enter the groove body 1, meanwhile, air pressure in the hole 14 of the semiconductor workpiece 9 is also reduced, and the electroplating liquid can easily enter the hole 14.
The utility model discloses in the use, 8 initial positions of work or material rest are perpendicular to cell body 1 bottom, pack into semiconductor workpiece 9 back, rotary power mechanism 10 takes semiconductor workpiece 9 to rotate through drive mechanism drive work or material rest 8, make the hole 14 on the semiconductor workpiece 9 personally submit the tilt state with the level (the entrance to a cave is at the upside), then pressure mechanism 6 impresses the plating solution in the liquid storage pot 5 in cell body 1, the ascending in-process of liquid level in the cell body 1, the plating solution is got into by the entrance to a cave of hole 14, is full of whole hole 14. After the electroplating solution is injected, the rotary power mechanism 10 drives the material rack 8 to rotate and reset, and a subsequent electroplating process is started.
Further, the liquid storage tank 5 is also connected with a liquid replenishing pipe 11, and a pressure release valve 12 is arranged on the liquid storage tank 5. The liquid replenishing pipe 11 is used for replenishing the plating liquid into the liquid storage tank 5, and the pressure relief valve 12 is used for reducing the air pressure in the liquid storage tank 5 during liquid replenishing.
Further, the pressure mechanism 6 is a high-pressure gas tank.
Further, the rotating power mechanism 10 is a motor.
Further, the transmission mechanism is preferably a gear transmission mechanism. The transmission mechanism may be of another type, and is configured to transmit the torque of the rotary power mechanism 10 to the rack 8 to rotate the rack 8. If the assembly through hole of the transmission mechanism and the tank body 1 is lower than the highest liquid level of the electroplating solution in the tank body 1, a rotary sealing element needs to be installed in the assembly through hole to prevent the electroplating solution from leaking.
Further, the bottom of the tank body 1 is connected with a liquid discharge pipe 13. The waste plating liquid can be discharged through the drain pipe 13.
Compared with the prior art, the utility model discloses a technological effect lies in:
the utility model discloses can make semiconductor work piece 9 be the slope form through rotatory work or material rest 8, then by the leading-in plating solution in 1 bottom of cell body, the ascending in-process of plating solution liquid level slowly submerges semiconductor work piece 9, the slope of hole 14 on the semiconductor work piece 9, the plating solution can be in the smooth entering hole 14, prevent to remain the bubble, the plating solution fully contacts with 14 inner walls of hole, avoid 14 inner walls of hole to produce the electroplating blind area, and simultaneously, extract 1 interior air of cell body through vacuum pump 4, make 1 interior atmospheric pressure of cell body reduce, the plating solution gets into in 1 of cell body more easily, also fill up hole 14 more easily.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may be modified or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.
Claims (6)
1. A vacuum tank device of TSV electroplating equipment is characterized by comprising a tank body, a first pipeline and a second pipeline, wherein a vacuum pump and a liquid storage tank are arranged on one side of the tank body, one end of the first pipeline is connected with the vacuum pump, the other end of the first pipeline extends into the tank body from the upper side to extract air in the tank body, one end of the second pipeline extends into the liquid storage tank, the other end of the second pipeline extends into the tank body from the bottom and is used for inputting electroplating liquid from the bottom of the tank body, a pressure mechanism is arranged on one side of the liquid storage tank to press the electroplating liquid in the liquid storage tank into the tank body, and the pressure mechanism is connected with the liquid storage tank through a third pipeline;
the semiconductor device is characterized in that a material rack is arranged in the groove body to fix the semiconductor workpiece, and a rotary power mechanism is arranged on the outer side of the groove body and is in transmission connection with the material rack through a transmission mechanism to drive the material rack to rotate.
2. The vacuum tank device for the TSV electroplating equipment of claim 1, wherein the liquid storage tank is further connected with a liquid replenishing pipe, and a pressure relief valve is arranged on the liquid storage tank.
3. The TSV plating apparatus vacuum tank device of claim 1, wherein the pressure mechanism is a high pressure gas tank.
4. The vacuum tank device for the TSV plating equipment of claim 1, wherein the rotational power mechanism is a motor.
5. The TSV plating apparatus vacuum tank device of claim 1, wherein the transmission mechanism is a gear transmission mechanism.
6. The vacuum tank device for the TSV electroplating equipment as claimed in claim 1, wherein a drain pipe is connected to the bottom of the tank body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023284771.8U CN214168179U (en) | 2020-12-30 | 2020-12-30 | Vacuum tank device of TSV electroplating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023284771.8U CN214168179U (en) | 2020-12-30 | 2020-12-30 | Vacuum tank device of TSV electroplating equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214168179U true CN214168179U (en) | 2021-09-10 |
Family
ID=77610917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023284771.8U Active CN214168179U (en) | 2020-12-30 | 2020-12-30 | Vacuum tank device of TSV electroplating equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214168179U (en) |
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2020
- 2020-12-30 CN CN202023284771.8U patent/CN214168179U/en active Active
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