CN214151517U - Atomizing device and heating circuit thereof - Google Patents

Atomizing device and heating circuit thereof Download PDF

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Publication number
CN214151517U
CN214151517U CN202023298846.8U CN202023298846U CN214151517U CN 214151517 U CN214151517 U CN 214151517U CN 202023298846 U CN202023298846 U CN 202023298846U CN 214151517 U CN214151517 U CN 214151517U
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resistor
mcu
heating element
port
triode
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李亚飞
李祥忠
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Jiangmen Moore Technology Ltd
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Jiangmen Moore Technology Ltd
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Priority to CN202023298846.8U priority Critical patent/CN214151517U/en
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Publication of CN214151517U publication Critical patent/CN214151517U/en
Priority to JP2023514756A priority patent/JP7564341B2/en
Priority to EP21913776.7A priority patent/EP4212982A4/en
Priority to KR1020237008288A priority patent/KR20230049697A/en
Priority to PCT/CN2021/136079 priority patent/WO2022143035A1/en
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00Control of temperature
    • G05D23/19Control of temperature characterised by the use of electric means
    • G05D23/20Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00Control of temperature
    • G05D23/19Control of temperature characterised by the use of electric means
    • G05D23/20Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • G05D23/24Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
    • G05D23/2401Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor using a heating element as a sensing element
    • AHUMAN NECESSITIES
    • A24TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24FSMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/50Control or monitoring
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00Control of temperature
    • G05D23/19Control of temperature characterised by the use of electric means
    • G05D23/1906Control of temperature characterised by the use of electric means using an analogue comparing device
    • G05D23/1909Control of temperature characterised by the use of electric means using an analogue comparing device whose output amplitude can only take two discrete values
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00Details of electric heating devices
    • H05B1/02Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227Applications
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/0019Circuit arrangements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Resistance Heating (AREA)
  • Measurement Of Resistance Or Impedance (AREA)

Abstract

The utility model relates to an atomizing device and heating circuit thereof, this heating circuit include heat-generating body resistance, MCU, still include: the MCU controls the first driving unit through a corresponding IO port in a first period of a PWM cycle to enable a battery power supply to supply power only for the heating element resistor; and the MCU controls the second driving unit to enable the battery power supply to be in series connection with the sampling resistor and the heating element resistor through the corresponding IO ports of the MCU in the second period of the PWM period, collects the voltage of the heating element resistor and the voltage of the sampling resistor through the corresponding IO ports of the MCU respectively, and calculates the resistance value of the heating element resistor according to the resistance value of the sampling resistor and the collected voltage. Implement the technical scheme of the utility model, the resistance that can improve the heat-generating body resistance detects the precision than higher, moreover, reduce cost.

Description

Atomizing device and heating circuit thereof
Technical Field
The utility model relates to an atomization plant field especially relates to an atomizing device and heating circuit thereof.
Background
In the atomization device, the core element is the heating element, the core technology is the temperature control of the heating element, and the key for carrying out the temperature control is to measure the temperature of the heating element. The heating element is usually a heating element resistor, and generates heat by supplying power to the heating element resistor, thereby heating the atomized substrate to raise the temperature of the atomized substrate and generate the aerosol or aerosol. In the current heating circuit, a sampling resistor is connected in series on a heating loop to detect the resistance of a heating element resistor, then the voltage drop on the sampling resistor is amplified by an operational amplifier and then is collected and calculated by an MCU (microprogrammed control unit), and the MCU obtains current through I ═ U/R. Because the MCU voltage is usually obtained after being stepped down by the LDO, the voltage that the MCU can collect is smaller than the voltage of the heating power supply (battery), so the voltage on the heating element resistor needs to be collected by the MCU after being divided by the sampling resistor, and then the resistance of the heating element resistor is calculated by R ═ U/I. In this way, since the sampling resistor is connected in series to the heating circuit, the sampling resistance value needs to be very small (in the order of m Ω) so as not to affect the heating efficiency, and the voltage drop of the sampling resistor needs to be amplified by adding the operational amplifier because the voltage drop of the sampling resistor is very small. Because the sampling resistance is very little, the precision of resistance itself is difficult to accomplish very high, in addition there is the error of operational amplifier itself, and the current error of sampling just is bigger like this, and in addition the precision error of sampling resistance makes the voltage on the heat-generating body resistance of gathering also have the error, thereby the resistance error of heat-generating body resistance that calculates through R ═ U/I is just bigger, owing to need increase operational amplifier, the cost is higher moreover.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model lies in, to the big, with high costs defect of error that prior art exists, provide an atomizing device and heating circuit thereof.
The utility model provides a technical scheme that its technical problem adopted is: construct an atomizing device's heating circuit, including heat-generating body resistance, MCU, still include: a first drive unit, a second drive unit, and a sampling resistor having a resistance value larger than that of the heating element resistor,
the MCU controls the first driving unit through the corresponding IO port in a first time period of a PWM cycle to enable a battery power supply to supply power only for the heating element resistor;
and the MCU controls the second driving unit to enable the battery power supply to be in series connection with the sampling resistor and the heating element resistor through the corresponding IO ports of the MCU in the second period of the PWM period, collects the voltage of the heating element resistor and the voltage of the sampling resistor through the corresponding IO ports of the MCU respectively, and calculates the resistance value of the heating element resistor according to the resistance value of the sampling resistor and the collected voltage.
Preferably, the first driving unit includes a PMOS transistor, a switch device, a third resistor and a fourth resistor, wherein, the first IO port of the MCU is connected to the control terminal of the switch device and the first terminal of the fourth resistor, the first terminal of the switch device and the second terminal of the fourth resistor are grounded, the second terminal of the switch device is connected to the gate of the PMOS transistor and the first terminal of the third resistor, the source of the PMOS transistor and the second terminal of the third resistor are connected to the battery power source, the drain of the PMOS transistor is connected to the first terminal of the heating element resistor, and the second terminal of the heating element resistor is grounded.
Preferably, the second drive unit includes first triode, moreover, the base of first triode is connected MCU's second IO mouth, the battery power is connected to the collecting electrode of first triode, the projecting pole of first triode is connected respectively sampling resistor's first end reaches MCU's third IO mouth, sampling resistor's second end is connected respectively heating body resistor's first end reaches MCU's fourth IO mouth.
Preferably, the switching device includes an NMOS transistor, a gate of the NMOS transistor is connected to the first IO port of the MCU, a source of the NMOS transistor is grounded, and a drain of the NMOS transistor is connected to the gate of the PMOS transistor and the first end of the third resistor, respectively.
Preferably, the switching device includes a second triode and a fifth resistor, wherein a base of the second triode is connected to a first end of the fourth resistor and a first end of the fifth resistor respectively, a collector of the second triode is connected to a gate of the PMOS transistor and a first end of the third resistor respectively, an emitter of the second triode and a second end of the fourth resistor are grounded respectively, and a second end of the fifth resistor is connected to the first IO port of the MCU.
The utility model discloses still construct an atomizing device, its characterized in that, including above heating circuit.
The utility model provides a technical scheme, except setting up heating circuit among atomizing device's the heating circuit, still additionally increased detection circuit all the way, and MCU adopts PWM drive mode to realize heating control, promptly, timesharing control heating circuit and detection circuit work, specifically: in the first time period of the PWM cycle, the MCU controls the first driving unit to enable the battery power supply to supply power only for the heating element resistor, namely, the heating loop is controlled to work; and in the second time interval of the PWM cycle, the MCU controls the second driving unit to enable the battery power supply to supply power for the sampling resistor and the heating element resistor which are connected in series, namely, the detection loop is controlled to work. In the heating circuit, the sampling resistor works only during the resistance detection of the heating element resistor (in the second period of the PWM cycle) and does not work at other moments, so that the sampling resistor can select a resistor with a larger resistance value; on the other hand, the voltage on the sampling resistor can be directly sampled through a corresponding IO port (ADC port) of the MCU, and amplification by using an operational amplifier is not needed, so that the voltage sampling precision can be improved, the resistance value detection precision of the heating element resistor is improved, and meanwhile, the cost can be reduced because the operational amplifier is not needed.
Drawings
In order to illustrate the embodiments of the present invention more clearly, the drawings that are needed in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and that other drawings can be obtained by those skilled in the art without inventive work. In the drawings:
fig. 1 is a circuit diagram of a first embodiment of a heating circuit of an atomizing device according to the present invention;
fig. 2 is a circuit diagram of a second embodiment of the heating circuit of the atomizing device of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The technical problem to current heating circuit that the detection precision that has the heat-generating body resistance is not high, the cost is great, the utility model discloses construct an atomizing device's heating circuit, this heating circuit includes MCU, heat-generating body resistance, sampling resistor, first drive unit and second drive unit, and the resistance of sampling resistor is greater than the resistance of heat-generating body resistance, for example, the sampling resistor chooses for use the resistance to be omega hierarchical high accuracy resistance. In addition, the MCU controls the first driving unit through the corresponding IO port in the first time period of the PWM cycle to enable the battery power supply to supply power only for the heating element resistor; and in the second period, the MCU respectively collects the voltage of the heating body resistor and the voltage of the sampling resistor through the corresponding IO ports and calculates the resistance value of the heating body resistor according to the resistance value of the sampling resistor and the collected voltage. It should be understood that the PWM period is equal to the sum of the first period and the second period.
In this embodiment, the heating circuit is additionally provided with a detection circuit in addition to the heating circuit, and the MCU realizes heating control by PWM driving, that is, the heating circuit and the detection circuit are controlled in time-division, specifically: in the first time period of the PWM cycle, the MCU controls the first driving unit to enable the battery power supply to supply power only for the heating element resistor, namely, the heating loop is controlled to work; and in the second time interval of the PWM cycle, the MCU controls the second driving unit to enable the battery power supply to supply power for the sampling resistor and the heating element resistor which are connected in series, namely, the detection loop is controlled to work. In the heating circuit of this embodiment, since the sampling resistor operates only when detecting the resistance value of the heating element resistor (in the second period of the PWM cycle) and does not operate at other times, the sampling resistor can be a resistor with a larger resistance value, so that, on the one hand, the accuracy of the sampling resistor with a larger resistance value can be higher, so that the accuracy of detecting the resistance value of the heating element resistor can be improved; on the other hand, the voltage on the sampling resistor can be directly sampled through a corresponding IO port (ADC port) of the MCU, and amplification by using an operational amplifier is not needed, so that the voltage sampling precision can be improved, the resistance value detection precision of the heating element resistor is improved, and meanwhile, the cost can be reduced because the operational amplifier is not needed.
Fig. 1 is a circuit diagram of a first embodiment of the heating circuit of the atomizing device of the present invention, the heating circuit of this embodiment includes MCU U1, heating element resistor R2, sampling resistor R1, first driving unit and second driving unit, and the resistance of sampling resistor R1 is greater than the resistance of heating element resistor R2.
The first driving unit comprises a PMOS tube Q1, an NMOS tube Q3, a third resistor R3 and a fourth resistor R4, wherein a first IO Port (PMOS) of the MCU U1 is respectively connected with a grid of the NMOS tube Q3 and a first end of the fourth resistor R4, a source of the NMOS tube Q3 and a second end of the fourth resistor R4 are respectively grounded, a drain of the NMOS tube Q3 is respectively connected with a grid of the PMOS tube Q1 and a first end of the third resistor R3, a source of the PMOS tube Q1 and a second end of the third resistor R3 are respectively connected with a battery power supply (BAT), a drain of the PMOS tube Q1 is connected with a first end of the heating element resistor R2, and a second end of the heating element resistor R2 is grounded.
The second driving unit comprises a first triode Q2, the base of the first triode Q2 IS connected with a second IO port (ISEN) of the MCU U1, the collector of the first triode Q2 IS connected with a battery power supply (BAT), the emitter of the first triode Q2 IS respectively connected with the first end of the sampling resistor R1 and a third IO port (IS1) of the MCU U1, the second end of the sampling resistor R1 IS respectively connected with the first end of the heating element resistor R2 and a fourth IO port (IS2) of the MCU, and it should be understood that the third IO port (IS1) and the fourth IO port (IS2) of the MCU U1 are AD ports.
The working principle of the heating circuit is explained below:
in the first period of each PWM cycle, the first IO Port (PMOS) of the MCU U1 outputs a high level, and the NMOS transistor Q3 is turned on, so that the PMOS transistor Q1 is turned on. Meanwhile, the second IO port (ISEN) of the MCU U1 outputs a low level, and the first transistor Q2 is turned off. At this time, the voltage of the battery power supply (VBAT) is directly applied to the heater resistor R2 through the PMOS transistor Q1, and the heater resistor R2 starts to operate normally;
in the second period of each PWM cycle, the first IO Port (PMOS) of the MCU U1 outputs a low level, and the NMOS transistor Q3 is turned off, so that the PMOS transistor Q1 is turned off, and the heater resistor R2 stops heating. Meanwhile, the second IO port (ISEN) of the MCU U1 outputs a high level, and the first transistor Q2 is turned on. At this time, the current flows from the battery power supply (VBAT) to the ground via the first transistor Q2, the sampling resistor R1, and the heater resistor R2. Moreover, the base voltage of the first transistor Q2 IS the high level of the IO port of the MCU U1, and the emitter voltage of the first transistor Q2 IS slightly smaller than the base voltage thereof when the first transistor Q2 IS turned on due to the clamping effect of the base voltage, so that the voltages of the third and fourth IO ports (IS1, IS2) of the MCU U1 are both smaller than the high level of the IO port of the MCU U1, so the third and fourth IO ports (IS1, IS2) of the MCU U1 can be directly sampled with the voltage sampled by the third IO port of the MCU U1 being VIS1 and the voltage sampled by the fourth IO port of the MCU U1 being VIS2, and then the current I of the detection loop IS calculated according to the following formula: i ═ VIS1-VIS2)/R1Wherein R is1The resistance value R of the heating element resistor R2 is calculated according to the following formula after the resistance value of the sampling resistor R1 is sampled2:R2=VIS2/I=R1*VIS2/(VIS1-VIS2)。
Fig. 2 is a circuit diagram of a second embodiment of a heating circuit of the atomizing device of the present invention, which is different from the embodiment shown in fig. 1 only in that: the switching device is replaced by an NMOS transistor Q3 and is a second triode Q4 and a fifth resistor R5, a base of the second triode Q4 is connected to a first end of a fourth resistor R4 and a first end of a fifth resistor R5, a collector of the second triode Q4 is connected to a gate of a PMOS transistor Q1 and a first end of a third resistor R3, an emitter of the second triode Q4 and a second end of the fourth resistor R4 are grounded, and a second end of the fifth resistor R5 is connected to a first IO Port (PMOS) of the MCU U1. Other similar parts are not described in detail herein.
The working principle of the heating circuit is explained below:
in the first period of each PWM cycle, the first IO Port (PMOS) of the MCU U1 outputs a high level, and the second transistor Q4 is turned on, so that the PMOS transistor Q1 is turned on. Meanwhile, the second IO port (ISEN) of the MCU U1 outputs a low level, and the first transistor Q2 is turned off. At this time, the voltage of the battery power supply (VBAT) is directly applied to the heater resistor R2 through the PMOS transistor Q1, and the heater resistor R2 starts to operate normally;
in the second period of each PWM cycle, the first IO Port (PMOS) of the MCU U1 outputs a low level, and the second transistor Q4 is turned off, so that the PMOS transistor Q1 is turned off, and the heater resistor R2 stops heating. Meanwhile, the second IO port (ISEN) of the MCU U1 outputs a high level, and the first transistor Q2 is turned on. At this time, the current flows from the battery power supply (VBAT) to the ground via the first transistor Q2, the sampling resistor R1, and the heater resistor R2. Moreover, the base voltage of the first transistor Q2 IS the high level of the IO port of the MCU U1, and the emitter voltage of the first transistor Q2 IS slightly smaller than the base voltage thereof when the first transistor Q2 IS turned on due to the clamping effect of the base voltage, so that the voltages of the third and fourth IO ports (IS1, IS2) of the MCU U1 are both smaller than the high level of the IO port of the MCU U1, so the third and fourth IO ports (IS1, IS2) of the MCU U1 can be directly sampled with the voltage sampled by the third IO port of the MCU U1 being VIS1 and the voltage sampled by the fourth IO port of the MCU U1 being VIS2, and then the current I of the detection loop IS calculated according to the following formula: i ═ VIS1-VIS2)/R1Wherein R is1The resistance value R of the heating element resistor R2 is calculated according to the following formula after the resistance value of the sampling resistor R1 is sampled2:R2=VIS2/I=R1*VIS2/(VIS1-VIS2)。
The utility model discloses still construct an atomizing device, this atomizing device includes heating circuit, and this heating circuit's structure can refer to foreland the above.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any tampering, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.

Claims (6)

1. The utility model provides an atomizing device's heating circuit, includes heat-generating body resistance, MCU, its characterized in that still includes: a first drive unit, a second drive unit, and a sampling resistor having a resistance value larger than that of the heating element resistor,
the MCU controls the first driving unit through the corresponding IO port in a first time period of a PWM cycle to enable a battery power supply to supply power only for the heating element resistor;
and the MCU controls the second driving unit to enable the battery power supply to be in series connection with the sampling resistor and the heating element resistor through the corresponding IO ports of the MCU in the second period of the PWM period, collects the voltage of the heating element resistor and the voltage of the sampling resistor through the corresponding IO ports of the MCU respectively, and calculates the resistance value of the heating element resistor according to the resistance value of the sampling resistor and the collected voltage.
2. The heating circuit of the atomizing device according to claim 1, wherein the first driving unit includes a PMOS transistor, a switching device, a third resistor and a fourth resistor, wherein the first IO port of the MCU is connected to the control terminal of the switching device and the first terminal of the fourth resistor, respectively, the first terminal of the switching device and the second terminal of the fourth resistor are grounded, respectively, the second terminal of the switching device is connected to the gate of the PMOS transistor and the first terminal of the third resistor, respectively, the source of the PMOS transistor and the second terminal of the third resistor are connected to a battery power source, respectively, the drain of the PMOS transistor is connected to the first terminal of the heating element resistor, and the second terminal of the heating element resistor is grounded.
3. The heating circuit of the atomizing device according to claim 2, wherein the second driving unit includes a first triode, a base of the first triode is connected to the second IO port of the MCU, a collector of the first triode is connected to the battery power supply, an emitter of the first triode is connected to the first end of the sampling resistor and the third IO port of the MCU, and a second end of the sampling resistor is connected to the first end of the heating resistor and the fourth IO port of the MCU.
4. The heating circuit of the atomizing device according to claim 2, wherein the switching device comprises an NMOS transistor, a gate of the NMOS transistor is connected to the first IO port of the MCU, a source of the NMOS transistor is grounded, and a drain of the NMOS transistor is connected to a gate of the PMOS transistor and the first end of the third resistor, respectively.
5. The heating circuit of the atomizing device according to claim 2, wherein the switching device comprises a second triode and a fifth resistor, wherein a base of the second triode is connected to a first end of the fourth resistor and a first end of the fifth resistor, a collector of the second triode is connected to a gate of the PMOS transistor and a first end of the third resistor, an emitter of the second triode and a second end of the fourth resistor are grounded, respectively, and a second end of the fifth resistor is connected to the first IO port of the MCU.
6. An atomising device comprising a heating circuit according to any of the claims 1 to 5.
CN202023298846.8U 2020-12-30 2020-12-30 Atomizing device and heating circuit thereof Active CN214151517U (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN202023298846.8U CN214151517U (en) 2020-12-30 2020-12-30 Atomizing device and heating circuit thereof
JP2023514756A JP7564341B2 (en) 2020-12-30 2021-12-07 Atomization device, heating electric circuit, method, readable storage medium
EP21913776.7A EP4212982A4 (en) 2020-12-30 2021-12-07 Atomization device, heating circuit, method, and readable storage medium
KR1020237008288A KR20230049697A (en) 2020-12-30 2021-12-07 Atomization device, heating electric circuit, method and readable storage medium
PCT/CN2021/136079 WO2022143035A1 (en) 2020-12-30 2021-12-07 Atomization device, heating circuit, method, and readable storage medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202023298846.8U CN214151517U (en) 2020-12-30 2020-12-30 Atomizing device and heating circuit thereof

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CN214151517U true CN214151517U (en) 2021-09-07

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EP (1) EP4212982A4 (en)
JP (1) JP7564341B2 (en)
KR (1) KR20230049697A (en)
CN (1) CN214151517U (en)
WO (1) WO2022143035A1 (en)

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WO2022143035A1 (en) * 2020-12-30 2022-07-07 江门摩尔科技有限公司 Atomization device, heating circuit, method, and readable storage medium
CN115813026A (en) * 2022-12-23 2023-03-21 深圳美众联科技有限公司 Electronic cigarette with double atomizing cores and heat balance control method thereof

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CN108873976B (en) * 2018-06-25 2020-07-07 深圳市丽福科技有限责任公司 Temperature control system of electronic cigarette
CN109567280A (en) * 2019-01-16 2019-04-05 深圳市海派特光伏科技有限公司 Atomizer resistance value detection circuit and electronic cigarette
CN109656283B (en) * 2019-01-22 2024-03-19 河南中烟工业有限责任公司 Temperature control circuit and temperature control method for heating wire based on time-sharing processing
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CN111436668A (en) * 2020-03-27 2020-07-24 河南中烟工业有限责任公司 Control circuit of electron atomizing cigarette
CN214151517U (en) * 2020-12-30 2021-09-07 江门摩尔科技有限公司 Atomizing device and heating circuit thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022143035A1 (en) * 2020-12-30 2022-07-07 江门摩尔科技有限公司 Atomization device, heating circuit, method, and readable storage medium
CN115813026A (en) * 2022-12-23 2023-03-21 深圳美众联科技有限公司 Electronic cigarette with double atomizing cores and heat balance control method thereof
CN115813026B (en) * 2022-12-23 2024-01-02 深圳美众联科技有限公司 Electronic cigarette with double atomization cores and heat balance control method thereof

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EP4212982A4 (en) 2024-03-13
WO2022143035A1 (en) 2022-07-07
EP4212982A1 (en) 2023-07-19
JP7564341B2 (en) 2024-10-08
KR20230049697A (en) 2023-04-13
JP2023549004A (en) 2023-11-22

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