CN213902639U - Single photon detection circuit for avalanche diode - Google Patents
Single photon detection circuit for avalanche diode Download PDFInfo
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- CN213902639U CN213902639U CN202022296420.2U CN202022296420U CN213902639U CN 213902639 U CN213902639 U CN 213902639U CN 202022296420 U CN202022296420 U CN 202022296420U CN 213902639 U CN213902639 U CN 213902639U
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- 238000001514 detection method Methods 0.000 title claims abstract description 29
- 238000010791 quenching Methods 0.000 claims abstract description 40
- 230000000171 quenching effect Effects 0.000 claims abstract description 37
- 230000001629 suppression Effects 0.000 claims abstract description 15
- 238000007493 shaping process Methods 0.000 claims abstract description 8
- 230000003321 amplification Effects 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 230000008030 elimination Effects 0.000 abstract description 4
- 238000003379 elimination reaction Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 2
- 238000013461 design Methods 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000012216 screening Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 1
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- 238000007599 discharging Methods 0.000 description 1
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Abstract
The utility model discloses a single photon detection circuitry with avalanche diode, this circuit include that sinusoidal gate pulse signal source, multiplier circuit, avalanche diode trigger branch road, novel quenching circuit, band elimination filter circuit, leading amplifier circuit, avalanche signal examine with shaping circuit and counting circuit, wherein novel quenching circuit comprises sinusoidal gate control pulse quenching circuit and initiative suppression circuit, and this circuit design's advantage lies in: the sine signal after frequency multiplication is used as a driving electric signal, and the active quenching circuit and the gate control pulse circuit work alternately, so that the dead time of the avalanche diode is effectively shortened, the detection efficiency of the avalanche diode is improved, the defect of slow pressure drop change of the sine signal is overcome, and the detection speed of single photons is improved.
Description
Technical Field
The utility model relates to a trace substance detects the field, especially relates to single photon detection circuitry of quenching circuit integration that single photon detected.
Background
In the field of material detection, the existence of different trace particles can be marked by Raman spectrum, and the existence of the material can be distinguished and the concentration of the particles can be measured more accurately by detecting photons emitted by the particles. Because the light emitted by the particles is very weak, the single photon detection circuit has very important function in the field. The existing single photon detection schemes adopting a gating mode mainly comprise the following two types:
the first scheme is as follows:
1. the avalanche diode operates in the geiger mode at a suitable temperature. The avalanche diode module is driven by sine gate pulses, and the single photon detection circuit converts received single photon signals into voltage signals to be output under the drive of the gate pulses. Meanwhile, the avalanche diode can gradually return to a detection state when the avalanche diode is in a falling edge along with the driving of the gate pulse.
2. The voltage signal output by the single photon induction module passes through the stop band filter circuit to filter spike noise generated in the avalanche diode.
3. The voltage signal processed by the stop band filter circuit is input into a preamplification circuit for amplification.
4. And inputting the amplified signal into an avalanche discrimination and shaping circuit for digital-to-analog conversion, and converting the signal into a square wave signal for output.
5. And inputting the shaped square wave signal into a counting circuit for counting statistics.
Scheme II:
1. the avalanche diode operates in the geiger mode at a suitable temperature. The avalanche diode module is driven by square wave pulses, and the single photon detection circuit converts received single photon signals into voltage signals to be output under the drive of gate pulses.
2. The voltage signal output by the single photon induction module passes through a comparator of the active quenching circuit to filter noise, and the event that the signal of the photon is detected is converted into a voltage signal to quench the avalanche diode, so that the avalanche diode returns to a detection state.
3. The voltage signal is amplified.
4. And inputting the amplified signal into an avalanche discrimination and shaping circuit for digital-to-analog conversion, and converting the signal into a square wave signal for output.
5. And inputting the shaped square wave signal into a counting circuit for counting statistics.
The main disadvantages of the prior art are:
(1): in the first scheme, the rising and the falling of the point position of the sine gate pulse are consumed, so that the recovery time of the avalanche diode is slow, and the detection precision is reduced due to the interference of the rear pulse.
(2): although the square wave gate pulse adopted by the second scheme has a faster recovery speed than that of the avalanche diode, the avalanche diode can generate strong needle point noise, and the strong needle point noise cannot be accurately filtered by the comparator.
The invention content is as follows:
the utility model aims at solving the main shortcoming of above-mentioned circuit, provide an application avalanche diode's single photon detection circuitry for improve the efficiency that single photon detected.
In order to realize the above requirement, the technical scheme of the utility model is as follows:
a single photon detection circuit for an avalanche diode. The circuit comprises a sine gate pulse signal source, a frequency doubling circuit, an avalanche diode triggering branch circuit, a novel quenching circuit, a band elimination filter circuit, a pre-amplification circuit, an avalanche signal screening and shaping circuit and a counting circuit. The novel quenching circuit consists of a sine gate control pulse quenching circuit and an active suppression circuit. The circuit design has the advantages that: the sine signal after frequency multiplication is used as a driving electric signal, and the active quenching circuit and the gate control pulse circuit work alternately, so that the dead time of the avalanche diode is effectively shortened, the detection efficiency of the avalanche diode is improved, the defect of slow pressure drop change of the sine signal is overcome, and the detection efficiency of single photons is improved.
As an optimized technical scheme, the frequency doubling circuit adopts a variable capacitance diode, and the whole frequency doubling circuit is constructed by an LC high-quality factor filter circuit, a variable capacitance diode branch circuit and a band-pass filter circuit.
The quenching circuit is characterized in that a gated pulse quenching circuit is combined with an active suppression quenching circuit, and the active suppression quenching circuit is connected to the vicinity of the anode of an avalanche diode in the gated pulse quenching circuit for control.
As an optimized technical scheme, the gated pulse quenching circuit also adopts a sine signal or a cosine signal as a pulse driving signal.
In order to optimize the technical scheme, the active suppression quenching circuit also adopts a trigger, and the output end of the stop band filter circuit is connected to the trigger to control the voltage at two ends of the avalanche diode.
As an optimized technical scheme, the stop band filter circuit also adopts a double-T type notch filter circuit, the anode of the avalanche diode is connected into the stop band filter circuit, and the output of the stop band filter circuit is connected into the active quenching circuit.
As an optimized technical scheme, the single photon detection circuit outputs a pulse signal which is connected with a counter and used for receiving photoelectrons.
The utility model has the advantages that:
(1): the frequency doubling circuit is adopted to carry out frequency doubling on the sinusoidal signal, and the problem that the voltage of the sinusoidal signal in the single photon detection circuit changes slowly is effectively solved.
(2): the sine-gate pulse quenching circuit and the active suppression quenching circuit are combined. When the sine wave is in rising time delay, the avalanche diode detects photons, and large current is generated in a branch where the avalanche diode is located, so that the anode point position of the avalanche diode is raised. The active suppression quenching circuit detects the signal, and the anode potential of the avalanche diode is rapidly reduced through logic control, so that the avalanche diode rapidly enters a state to be detected, and the dead time is shortened.
(3): the sine gate pulse quenching circuit is combined with the active suppression circuit, and when a photon signal is detected, the active suppression circuit rapidly returns the avalanche diode to a state to be detected through the trigger. The trigger has the function of state maintenance when the trigger does not receive the potential change, so the working state of the avalanche diode is more stable, and the avalanche diode also has certain protection effect, thereby prolonging the practical service life of the circuit and reducing the power consumption of the circuit.
(4): the sinusoidal gate pulse is adopted, noise generated by the avalanche diode is controlled within a single harmonic range, and a more accurate detection result is obtained through subsequent filtering processing.
(5): the whole device covers the whole process of detecting single photon counting from single photon, and all working modules are organically integrated together, so that the single photon detection is more convenient and easier.
Description of the drawings:
fig. 1 is a block diagram of the entire detection circuit.
FIG. 2 is a detailed circuit diagram of the frequency doubling circuit, avalanche diode leg, quenching circuit, and band reject circuit of the detection circuit.
Fig. 3 is a detailed circuit diagram of the active suppression circuit.
The specific implementation mode is as follows:
the invention is described in detail below with reference to the accompanying drawings in the examples of the invention.
As shown in fig. 1, it is a functional block diagram of the single photon detection circuit of the present invention. It includes: the device comprises a sinusoidal signal generator (100), a frequency doubling circuit (200), a gated pulse quenching circuit (300), an avalanche diode (400), a stop band filter circuit (600), an active suppression quenching circuit (500), a preamplifier circuit (700), an avalanche signal screening and shaping circuit (800) and a counting circuit (900). The pre-amplification circuit (700), the avalanche signal screening and shaping circuit (800) and the counting circuit (900) are sequentially connected from the stop band filter circuit (600).
As shown in fig. 2, the specific connection modes of the sinusoidal signal generator (100), the frequency doubling circuit (200), the gated pulse quenching circuit (300), the avalanche diode (400), the stop band filter circuit (600), and the active suppression quenching circuit (500) in fig. 1 are shown. The circuit comprises a sine gate generator (41), a frequency doubling circuit consisting of an inductor (42), an inductor (48), an inductor (51), a capacitor (43), a capacitor (44), a capacitor (47), a capacitor (49), a resistor (50), a resistor (52) and a varactor (46), an avalanche diode (55), a double-T-shaped notch filter circuit consisting of a capacitor (59), a capacitor (60), a capacitor (62), a resistor (57), a resistor (58), a resistor (61), a resistor (65), a resistor (64) and an amplifier (63), and an active suppression quenching circuit consisting of a trigger (66) and a plurality of resistor-capacitor elements.
When the generated sinusoidal signals pass through the frequency doubling circuit, the high-quality factor filter circuit formed by the inductor (42) and the capacitor (43) can accurately select the sinusoidal signals, a series of harmonic signals including fundamental waves are output by a branch circuit where the variable capacitance diode (46) is located, and finally the set frequency doubling sinusoidal signals are selected and output through the band-pass filter circuit formed by the inductor (48), the inductor (51), the capacitor (47), the capacitor (49), the resistor (50) and the resistor (52). When the avalanche diode (55) is operated in the gating mode, spike noise is generated due to the charging and discharging phenomenon of the junction capacitance of the avalanche diode (55), the amplitude of the spike noise is usually much larger than that of the avalanche signal, and therefore the avalanche signal is submerged by the noise. However, unlike the square wave gating signal, the peak noise generated by using the sine wave gating signal is mainly concentrated on the harmonic components with frequencies w, 2w, 3w, etc., and decreases as the harmonic frequencies increase, so the peak noise is easily filtered by the band-stop filter with the corresponding frequency. A double-T-shaped notch filter circuit consisting of a capacitor (59), a capacitor (60), a capacitor (62), a resistor (57), a resistor (58), a resistor (61), a resistor (64), a resistor (65) and an amplifier (63) is an ideal band elimination filter circuit. When the avalanche diode (55) works in a state to be measured and photons are detected, the potential of the anode of the avalanche diode is rapidly increased, a high level is input to the band elimination circuit, and filtering is carried out, so that the amplifier (63) outputs the high level to the trigger (66), and therefore the quenching of the avalanche diode (55) is controlled.
Fig. 3 is a detailed illustration of the active quench suppression circuit. When the avalanche diode (32) is operated in the state to be measured and detects a photon, the anode thereof must generate a high level to be sent to the stop band filter circuit (34), so that the stop band filter circuit (34) outputs the high level. The high level output by the stop band filter circuit is divided into two parts, one part is used for outputting to a subsequent circuit for further processing, and the other part is input to the trigger (35), so that the trigger (35) outputs the low level to reset the avalanche diode (32), and the dead time is shortened.
The utility model discloses the concrete theory of operation of detection circuitry and flow are as above, its main advantage lies in effectively improving the slow problem of sinusoidal signal change, under the condition that does not influence the precision, has improved the efficiency that single photon detected, has shortened avalanche diode's dead time.
Claims (7)
1. The single photon detection circuit for the avalanche diode is provided with a quenching circuit combining gated pulse and active suppression and is characterized by comprising the avalanche diode, a frequency doubling circuit, a quenching circuit, a stop band filter circuit, a pre-amplification circuit, an avalanche discrimination and shaping circuit and a counting circuit.
2. The single photon detection circuit with avalanche diodes according to claim 1, wherein the frequency doubling circuit (b) is a varactor diode, and the whole frequency doubling circuit (b) is constructed by an LC high-quality-factor filter circuit, a varactor diode branch circuit and a band-pass filter circuit.
3. The single photon detector circuit with avalanche diode according to claim 1 wherein the quenching circuit is a gated pulse quenching circuit combined with an active quenching circuit (g) controlled by the gated pulse quenching circuit connected to the vicinity of the anode of the avalanche diode (d).
4. The single photon detector circuit with avalanche diodes of claim 3, wherein the gated pulse quench circuit uses sine or cosine signals as the pulse drive signal.
5. The single photon detector circuit with avalanche diode according to claim 3, wherein the active quenching circuit (g) employs a trigger to connect the output of the stop band filter circuit (f) to the trigger to control the voltage across the avalanche diode (d).
6. The single photon detector circuit with avalanche diode according to claim 1, wherein the stop band filter circuit (f) employs a double T-type notch filter circuit, the anode of the avalanche diode (d) is connected to the stop band filter circuit (f), and the output of the stop band filter circuit (f) is connected to the active quenching circuit (g).
7. The single photon detection circuit with avalanche diode according to claim 1, wherein the signal outputted from the stop band filter circuit passes through the preamplifier circuit (h), the avalanche signal discriminating and shaping circuit (i) and the counter circuit (j) in sequence.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022296420.2U CN213902639U (en) | 2020-10-15 | 2020-10-15 | Single photon detection circuit for avalanche diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022296420.2U CN213902639U (en) | 2020-10-15 | 2020-10-15 | Single photon detection circuit for avalanche diode |
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| Publication Number | Publication Date |
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| CN213902639U true CN213902639U (en) | 2021-08-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202022296420.2U Expired - Fee Related CN213902639U (en) | 2020-10-15 | 2020-10-15 | Single photon detection circuit for avalanche diode |
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| Country | Link |
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| CN (1) | CN213902639U (en) |
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2020
- 2020-10-15 CN CN202022296420.2U patent/CN213902639U/en not_active Expired - Fee Related
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