CN213835624U - Single crystal seed crystal clamping structure - Google Patents
Single crystal seed crystal clamping structure Download PDFInfo
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- CN213835624U CN213835624U CN202022966534.3U CN202022966534U CN213835624U CN 213835624 U CN213835624 U CN 213835624U CN 202022966534 U CN202022966534 U CN 202022966534U CN 213835624 U CN213835624 U CN 213835624U
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- seed crystal
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- shaped
- clamping groove
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- 239000013078 crystal Substances 0.000 title claims abstract description 195
- 229910000831 Steel Inorganic materials 0.000 claims description 8
- 239000010959 steel Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 17
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000009434 installation Methods 0.000 abstract description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 11
- 229910001195 gallium oxide Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Abstract
The utility model discloses a single crystal seed crystal clamping structure, include: a seed rod; t-shaped seed crystal; the pin is used for fixing the T-shaped seed crystal; the top of the seed crystal clamping device is connected with the bottom of the seed crystal rod, the bottom of the seed crystal clamping device is provided with an avoidance hole for inserting a T-shaped end of a T-shaped seed crystal from bottom to top, the top of the avoidance hole is provided with a clamping groove matched with the T-shaped end of the T-shaped seed crystal, the clamping groove is communicated with the avoidance hole and intersected to form an included angle, a cavity for rotating the T-shaped end of the T-shaped seed crystal is arranged above the clamping groove, and the cavity is communicated with the avoidance hole and the clamping groove; the seed crystal clamping device is also provided with a bolt hole which is matched with the pin and used for inserting the pin at the top end of the clamping groove. The utility model discloses simple structure, the installation is dismantled conveniently, can effectively fix the seed crystal, not only does benefit to and keeps the seed crystal at crucible and insulation material center, can also accomplish the installation and take out the convenient characteristics of seed crystal, especially relates to and is used for pulling method and kyropoulos method.
Description
Technical Field
The utility model relates to a gallium oxide crystal growth equipment technical field, concretely relates to single crystal seed crystal clamping structure.
Background
The gallium oxide material is a new generation of ultra-wide bandgap semiconductor material, has the characteristics of larger band gap, higher breakdown field strength, lower energy consumption and the like compared with the wide bandgap semiconductor materials of silicon carbide and gallium nitride which have been industrialized in large scale in recent years, and has great application value in the field of high-voltage high-power semiconductor devices.
In addition, gallium oxide single crystals are few semiconductor materials that can be grown by a melt method, and are expected to be produced in large quantities at low cost. At present, the most commonly used melt method for growing bulk gallium oxide single crystals is a pulling method and a guiding method, and the principle of the method is that gallium oxide raw materials are heated and melted to form a melt, and then a single crystal seed crystal is contacted with the surface of the melt to be pulled upwards, so that the melt is solidified along the crystal orientation of the single crystal seed crystal to form a bulk single crystal.
The single crystal seed crystal is one of the key factors for growing the gallium oxide pulling method and the guided mode method, and has great influence on the quality of the obtained crystal, so the stability of the seed crystal fixation is very important. Gallium oxide crystals have high hardness and cleavage planes, and are very likely to crack and break during processing.
At present, most seed crystals are fixed by notching the seed crystals and binding the seed crystals on a hard-axis seed crystal rod by using a metal wire; or a through hole is drilled on the seed crystal, and the seed crystal is fixed on the hard shaft seed crystal rod by using a metal bolt. On one hand, the hard axis seed crystal fixing modes easily cause that the seed crystal is not concentric with the crucible and the heat insulation material, so that the crystal deviates in the growth process; on the other hand, the contact surface between the seed crystal punch and the seed crystal chuck is small, so that larger stress is easy to generate, and the crystal is likely to break in the growth process, thereby causing the failure of crystal growth.
Therefore, it is of great significance to design a suitable seed holding structure to fix the gallium oxide seed.
SUMMERY OF THE UTILITY MODEL
In order to overcome the instability that current seed crystal fixed technology exists, easy fracture, the not high scheduling problem of growing crystal quality, the utility model provides a single crystal seed crystal clamping structure, simple structure, the installation is dismantled conveniently, can effectively fix the seed crystal, not only does benefit to and keeps the seed crystal at crucible and insulation material center, can also accomplish the installation and take out the convenient characteristics of seed crystal, especially relates to and is used for pulling method and kyropoulos method.
A single crystal seed crystal holding structure comprising:
a seed rod;
t-shaped seed crystal;
the pin is used for fixing the T-shaped seed crystal;
the top of the seed crystal clamping device is connected with the bottom of the seed crystal rod, the bottom of the seed crystal clamping device is provided with an avoidance hole for inserting the T-shaped end of the T-shaped seed crystal from bottom to top, the top of the avoidance hole is provided with a clamping groove matched with the T-shaped end of the T-shaped seed crystal, the clamping groove is communicated with the avoidance hole and intersected to form an included angle, a cavity for rotating the T-shaped end of the T-shaped seed crystal is arranged above the clamping groove, and the cavity is communicated with the avoidance hole and the clamping groove; the seed crystal clamping device is positioned at the top end of the clamping groove and is also provided with a bolt hole which is matched with the pin and used for inserting the pin.
During the use, the top of seed rod can be fixed on the pulling device, inserts the T type end of T type seed crystal through dodging the hole and inserting seed crystal clamping device from bottom to top until the T type end is located the chamber, and rotatory T type seed crystal makes T type end correspond with the draw-in groove and imbeds in the draw-in groove, thereby inserts the pin bolt hole, thereby the T type end of pin bottom compaction draw-in groove is fixed T type seed crystal.
And after the crystal grows, taking out the pin, pulling or pushing the T-shaped seed crystal and the growing crystal upwards to enable the T-shaped end to leave the clamping groove and enter the cavity, rotating the T-shaped seed crystal to enable the T-shaped end to correspond to the avoiding hole, and moving the T-shaped seed crystal downwards to completely take out the T-shaped seed crystal and the growing crystal.
Preferably, the top of the seed crystal holding device is open and communicated with the chamber, and the bottom of the seed rod extends into the opening and is internally connected with the seed crystal holding device.
Preferably, the top of the seed crystal clamping device is in threaded connection with the bottom of the seed crystal rod.
Preferably, the clamping groove and the avoiding hole are vertically arranged, and the clamping groove is more stable.
Preferably, the upper end of the seed crystal rod is fixed on the flexible shaft steel wire rope. The soft shaft steel wire rope is used as a lifting mode, the tail end of the seed crystal can be quickly aligned to the center of a crucible by using the weight of the seed crystal rod, the seed crystal clamping device and the seed crystal, and the problems that the position of the seed crystal needs to be adjusted for a long time in the preparation process by the hard shaft lifting rod and the growth of the crystal is influenced by the circle drawing of the tail end of the seed crystal in the growth process are solved.
Preferably, the other end of the T-shaped seed crystal is cylindrical or polygonal columnar and can be obtained by integral cutting.
Preferably, the bolt hole is a through hole, penetrates through the chamber and is parallel to the clamping groove, and the T-shaped seed crystal can be better fixed after the pin is inserted.
Preferably, the seed rod main body is of a hollow round tube structure.
Preferably, the seed crystal holding device is cylindrical in shape.
Preferably, the seed rod, the seed crystal clamping device and the pin are made of iridium.
Compared with the prior art, the utility model, main advantage includes:
the seed crystal clamping device has the advantages of being simple and novel in structure, convenient to install before growing crystals, capable of taking out seed crystals from the clamping device easily after the crystals are grown, and free of cutting the seed crystals or disassembling the seed crystal clamping device.
And secondly, a flexible shaft steel wire rope is used as a lifting mode, the tail end of the seed crystal can be quickly aligned to the center of the crucible by utilizing the weight of the seed crystal rod, the seed crystal clamping device and the seed crystal, and the problems that the position of the seed crystal needs to be adjusted for a long time in the preparation process by a hard shaft lifting rod and the growth of the crystal is influenced by the drawing of a circle at the tail end of the seed crystal in the growth process are solved.
And thirdly, the seed crystal is in surface contact with the clamping groove of the seed crystal clamping device through the T-shaped part, the stress is uniform, and the problem of seed crystal fracture can be effectively avoided. And the pin passes through the seed crystal clamping device, so that the seed crystal is further fixed, and the problem of seed crystal shaking is avoided.
Drawings
FIG. 1 is a schematic view of the overall structure of a single crystal seed holding structure of an embodiment;
FIG. 2 is a schematic view showing the structure of a seed rod in the single crystal seed holding structure according to the embodiment;
FIGS. 3a and 3b are a schematic bottom view and a schematic sectional view A-A of a seed holding device in a single crystal seed holding structure according to an embodiment;
FIG. 4 is a schematic view of the structure of a pin in the single crystal seed holding structure of the embodiment;
FIG. 5 is a schematic view of a T-shaped seed crystal in a single crystal seed holding configuration of an embodiment;
in the figure: 1-seed rod, 11-upper end of seed rod, 12-bottom of seed rod, 2-seed crystal clamping device, 21-chamber, 22-bolt hole, 23-clamping groove, 24-avoiding hole, 3-pin, 4-T type seed crystal, 41-T type end, and 42-T type seed crystal lower end.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific embodiments. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. The following examples are conducted under conditions not specified, usually according to conventional conditions, or according to conditions recommended by the manufacturer.
As shown in fig. 1 to 5, the single crystal seed crystal holding structure of the present embodiment is a gallium oxide single crystal seed crystal holding structure, and includes a seed rod 1, a T-shaped seed crystal 4, a pin 3, and a seed crystal holding device 2. The seed rod 1, the seed crystal clamping device 2 and the pin 3 are made of iridium.
As shown in figure 2, the seed rod 1 is of a hollow circular tube structure, and the upper end 11 is connected to a flexible shaft steel wire rope through a bolt. The soft shaft steel wire rope is used as a lifting mode, the tail end of the seed crystal can be quickly aligned to the center of a crucible by using the weight of the seed crystal rod, the seed crystal clamping device and the seed crystal, and the problems that the position of the seed crystal needs to be adjusted for a long time in the preparation process by the hard shaft lifting rod and the growth of the crystal is influenced by the circle drawing of the tail end of the seed crystal in the growth process are solved. Because the melting point of gallium oxide reaches 1820 ℃, the temperature in the heat-insulating material is still high, a long iridium seed rod is left to extend into the heat-insulating material, and the steel wire rope is prevented from being melted due to high temperature. The lower end 12 of the seed rod is of a threaded structure and can be tightly connected with the seed crystal clamping device 2, so that the problem that parts fall off in the crystal growth process is avoided.
As shown in fig. 3a and 3b, the seed crystal holding device 2 is cylindrical, the bottom of the seed crystal holding device is provided with an avoidance hole 24 for inserting the T-shaped end 41 of the T-shaped seed crystal 4 from bottom to top, the top of the avoidance hole 24 is provided with a clamping groove 23 matched with the T-shaped end 41 of the T-shaped seed crystal 4, the clamping groove 23 is communicated with the avoidance hole 24 and is vertical to the avoidance hole 24, a cavity 21 for rotating the T-shaped end 41 of the T-shaped seed crystal 4 is arranged above the clamping groove 23, and the cavity 21 is communicated with both the avoidance hole 24 and the clamping groove 23; the seed holder 2 is open at the top and communicates with the chamber 21, and the seed rod bottom 12 extends into the opening and is threadedly engaged with the seed holder 2. The middle part of the seed crystal holding device 2, which is positioned at the top end of the clamping groove 23, is also provided with a bolt hole 22 which is matched with the pin 3 and is used for inserting the pin 3. The latch hole 22 is a through hole, penetrates the cavity 21, and is parallel to the card slot 23.
As shown in FIG. 4, the pin 3 has a cylindrical shape, and has a diameter and a length matching those of the pin hole 22 in the seed crystal holding unit 2.
As shown in fig. 5, the T-shaped seed crystal 4 is a gallium oxide single crystal, and is cut into a head portion having a T-shaped end 41 and a lower end 42 having a quadrangular prism structure by a wire cutter.
When the single crystal seed crystal clamping structure is used, the top of the seed crystal rod 1 is fixed on the flexible shaft steel wire rope, the T-shaped end 41 of the T-shaped seed crystal 4 is inserted into the seed crystal clamping device 2 from bottom to top through the avoiding hole 24 until the T-shaped end 41 is positioned in the cavity 21, the T-shaped seed crystal 490 is rotated to enable the T-shaped end 41 to correspond to the clamping groove 23, the T-shaped seed crystal 4 is put down, the T-shaped end 41 is embedded into the clamping groove 23, the pin 3 is inserted into the pin hole 22, and the bottom of the pin 3 compresses the T-shaped end 41 in the clamping groove 23 to fix the T-shaped seed crystal 4. The T-shaped seed crystal 4 can not move upwards, and the T-shaped end 41 is matched with the clamping groove 23 in size, so that the T-shaped seed crystal 4 can be firmly fixed in the clamping groove 23. When the seed rod 1 rotates and is pulled, the T-shaped seed crystal 4 does not shake.
After the crystal growth is finished and the furnace is completely cooled, the single crystal seed crystal clamping structure of the embodiment can conveniently take out the crystal. The pin 3 is taken out firstly, the T-shaped seed crystal 4 and the growing crystal are pulled or pushed upwards to enable the T-shaped end 41 to leave the clamping groove 23 and enter the cavity 21, then the T-shaped seed crystal 490 degrees is rotated to enable the T-shaped end 41 to correspond to the avoiding hole 24, and the T-shaped seed crystal 4 is moved downwards to take out the T-shaped seed crystal 4 and the growing crystal completely.
Furthermore, it should be understood that various changes and modifications of the present invention may be made by those skilled in the art after reading the above description of the present invention, and such equivalents also fall within the scope of the appended claims.
Claims (9)
1. A single crystal seed crystal holding structure, comprising:
a seed rod;
t-shaped seed crystal;
the pin is used for fixing the T-shaped seed crystal;
the top of the seed crystal clamping device is connected with the bottom of the seed crystal rod, the bottom of the seed crystal clamping device is provided with an avoidance hole for inserting the T-shaped end of the T-shaped seed crystal from bottom to top, the top of the avoidance hole is provided with a clamping groove matched with the T-shaped end of the T-shaped seed crystal, the clamping groove is communicated with the avoidance hole and intersected to form an included angle, a cavity for rotating the T-shaped end of the T-shaped seed crystal is arranged above the clamping groove, and the cavity is communicated with the avoidance hole and the clamping groove; the seed crystal clamping device is positioned at the top end of the clamping groove and is also provided with a bolt hole which is matched with the pin and used for inserting the pin.
2. A single crystal seed holding structure as set forth in claim 1 wherein the seed holding device is open at the top and communicates with the chamber, and the bottom of the seed shaft extends into the opening and is inscribed in the seed holding device.
3. A single crystal seed crystal holding structure as set forth in claim 1 or 2 wherein the top of the seed crystal holding apparatus is threadedly connected to the bottom of the seed shaft.
4. A single crystal seed crystal holding structure as claimed in claim 1, wherein the clamping groove is disposed perpendicular to the avoiding hole.
5. A single crystal seed crystal clamping structure as claimed in claim 1, wherein the upper end of the seed crystal rod is fixed on a flexible shaft steel wire rope.
6. A single crystal seed crystal holding structure as set forth in claim 1, wherein the other end of the T-shaped seed crystal is cylindrical or polygonal columnar.
7. A single crystal seed crystal holding structure as claimed in claim 1, wherein the pin hole is a through hole, penetrates the cavity, and is parallel to the chucking groove.
8. A single crystal seed crystal holding structure as set forth in claim 1 wherein the seed rod body is a hollow circular tube structure.
9. A single crystal seed holding structure as set forth in claim 1 wherein the seed holding device is cylindrical in shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022966534.3U CN213835624U (en) | 2020-12-10 | 2020-12-10 | Single crystal seed crystal clamping structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022966534.3U CN213835624U (en) | 2020-12-10 | 2020-12-10 | Single crystal seed crystal clamping structure |
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| CN213835624U true CN213835624U (en) | 2021-07-30 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114232070A (en) * | 2021-11-05 | 2022-03-25 | 浙江大学杭州国际科创中心 | Double-cavity structure and method for growing gallium oxide crystal by Czochralski method |
-
2020
- 2020-12-10 CN CN202022966534.3U patent/CN213835624U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114232070A (en) * | 2021-11-05 | 2022-03-25 | 浙江大学杭州国际科创中心 | Double-cavity structure and method for growing gallium oxide crystal by Czochralski method |
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