CN213816126U - Semiconductor packaging substrate structure - Google Patents
Semiconductor packaging substrate structure Download PDFInfo
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- CN213816126U CN213816126U CN202022861022.0U CN202022861022U CN213816126U CN 213816126 U CN213816126 U CN 213816126U CN 202022861022 U CN202022861022 U CN 202022861022U CN 213816126 U CN213816126 U CN 213816126U
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- vertical part
- strip
- heat dissipation
- insulating layer
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Abstract
The utility model discloses a semiconductor packaging substrate structure, which comprises a substrate body, wherein the bottom of the substrate body is provided with an insulating layer, the bottom of the insulating layer is provided with a heat dissipation structure, the heat dissipation structure is connected with the insulating layer through a heat-conducting silica gel layer, and the heat dissipation structure comprises a flat plate part and a strip-shaped heat dissipation belt which are arranged by being attached to the insulating layer; the strip-shaped heat dissipation belt comprises a first vertical part, a first connecting part, a second vertical part, a flat part, a third vertical part, a second connecting part and a fourth vertical part which are sequentially connected, and the top ends of the first vertical part and the fourth vertical part are connected with the flat plate part; the first vertical part and the fourth vertical part are attached, and a strip-shaped cavity is formed between the second vertical part and the third vertical part. The utility model discloses a heat radiation structure of integral type to carry out redesign to heat radiation structure, not only the bulk strength is high, has further increased heat radiation structure's heat radiating area moreover, great improvement the radiating efficiency, guarantee that semiconductor package substrate can realize high-efficient heat dissipation, make it be in a stable operational environment.
Description
Technical Field
The utility model relates to a semiconductor package substrate technical field especially relates to a semiconductor package substrate structure.
Background
The semiconductor package is a process of processing a wafer passing through a test according to a product model and a functional requirement to obtain an independent chip, wherein a semiconductor package substrate can provide functions of electrical connection, support, protection and the like for the chip, and the low heat dissipation efficiency is always a problem which is difficult to solve for the semiconductor package substrate, a specific heat dissipation structure is disclosed in a utility model patent specification with a publication number of 'CN 211182189U', as shown in figure 1, the heat dissipation structure comprises a substrate body 1-1, an insulating layer 1-2 is arranged at the bottom of the substrate body 1-1, a heat conduction plate 1-3 is arranged at the bottom of the insulating layer 1-2, heat dissipation fins 1-4 are uniformly arranged at the bottom of the heat conduction plate 1-3, the heat conduction plate 1-3 is connected with the insulating layer 1-2 through a heat conduction silica gel layer 1-5, the heat dissipation efficiency can be really improved to a certain extent by increasing the heat dissipation area, however, the improvement degree is limited, and there is still room for improvement, and the heat sink 1-4 needs to be connected to the heat conducting plate 1-3 by soldering, so the manufacturing process is complicated, and the cost is high, so that it is urgently needed to develop a semiconductor package substrate with a more excellent heat dissipation structure.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to avoid prior art's weak point, provide a semiconductor package substrate structure to effectively solve the weak point that exists among the prior art.
In order to achieve the above purpose, the utility model adopts the following technical scheme: the utility model provides a semiconductor package substrate structure, includes the base plate body, and the bottom of base plate body is provided with the insulating layer, and the bottom of insulating layer is provided with heat radiation structure, and heat radiation structure passes through heat conduction silica gel layer with the insulating layer to be connected its characterized in that: the heat dissipation structure comprises a flat plate part which is attached to the insulating layer and a plurality of strip-shaped heat dissipation belts which are uniformly arranged at the bottom of the flat plate part at intervals;
the strip-shaped heat dissipation belt comprises a first vertical part, a first connecting part, a second vertical part, a flat part, a third vertical part, a second connecting part and a fourth vertical part which are sequentially connected, and the top ends of the first vertical part and the fourth vertical part are connected with the flat plate part;
the first vertical part and the fourth vertical part are attached, and a strip-shaped cavity is formed between the second vertical part and the third vertical part;
the flat portion is provided with a first through groove used for communicating the long-strip-shaped cavity with outside air.
Further, a second through groove and a third through groove for communicating the long-strip-shaped cavity with the outside air are respectively arranged on the second vertical portion and the third vertical portion.
Furthermore, the first through groove, the second through groove and the third through groove are uniformly arranged at a plurality of positions at intervals along the length direction of the strip-shaped heat dissipation belt.
Furthermore, the flat plate part and the strip-shaped heat dissipation belt are of an integrally formed structure.
Further, first perpendicular portion, fourth perpendicular portion are connected with the flat plate portion through first arc portion, second arc portion respectively, form the holding tank that is used for holding heat conduction silica gel between first arc portion and the second arc portion.
Further, the strip-shaped chamber is of a structure with two open ends.
Further, the first vertical portion and the fourth vertical portion are fixedly connected in a spot welding mode.
The above technical scheme of the utility model following beneficial effect has: the utility model discloses a heat radiation structure of integral type to carry out redesign to heat radiation structure, not only the bulk strength is high, has further increased heat radiation structure's heat radiating area moreover, great improvement the radiating efficiency, guarantee that semiconductor package substrate can realize high-efficient heat dissipation, make it be in a stable suitable operational environment.
Drawings
FIG. 1 is a schematic diagram of a semiconductor package substrate according to the prior art;
FIG. 2 is a schematic structural diagram of an embodiment of the present invention;
FIG. 3 is an enlarged view of a portion of FIG. 2 at A;
fig. 4 is a perspective view of a heat dissipation structure according to an embodiment of the present invention;
fig. 5 is a perspective view of a heat dissipation structure according to an embodiment of the present invention.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings and examples. The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.
In the description of the present invention, "a plurality" means two or more unless otherwise specified; the terms "upper", "lower", "left", "right", "inner", "outer", "front", "rear", "head", "tail", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are merely for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 2-5, the substrate structure for semiconductor package according to this embodiment includes a substrate body 1, an insulating layer 2 is disposed at the bottom of the substrate body 1, a heat dissipation structure 3 is disposed at the bottom of the insulating layer 2, the heat dissipation structure 3 is connected to the insulating layer 2 through a thermal conductive silicone adhesive layer 4, and the heat dissipation structure 3 includes a flat plate portion 301 attached to the insulating layer 2 and a plurality of strip-shaped heat dissipation bands uniformly spaced at the bottom of the flat plate portion 301;
the strip-shaped heat dissipation strip comprises a first vertical portion 302, a first connecting portion 303, a second vertical portion 304, a flat portion 305, a third vertical portion 306, a second connecting portion 307 and a fourth vertical portion 308 which are sequentially connected, and the top ends of the first vertical portion 302 and the fourth vertical portion 308 are connected with the flat plate portion 301;
the first vertical portion 302 and the fourth vertical portion 308 are attached to each other, and the second vertical portion 304 and the third vertical portion 306 form a strip-shaped chamber 309 therebetween, so that the heat dissipation area of the heat dissipation structure 3 is increased, and the overall mechanical strength is ensured.
The flat portion 305 is provided with a first through groove 3051 for communicating the long strip-shaped chamber 309 with the external air, the second vertical portion 304 and the third vertical portion 306 are respectively provided with a second through groove 3041 and a third through groove 3061 for communicating the long strip-shaped chamber 309 with the external air, the first through groove 3051, the second through groove 3041 and the third through groove 3061 are uniformly arranged at intervals along the length direction of the strip-shaped heat dissipation strip, and through the arrangement of the three through groove structures, the rapid dissipation of hot air in the long strip-shaped chamber 309 can be ensured, and the situation of heat accumulation is avoided.
The flat plate part 301 and the strip-shaped heat dissipation belt are of an integrally formed structure, specifically, the heat dissipation structure 3 is integrally formed by integrally punching and forming plates, and in the forming stage, the use of a welding process is avoided, so that the manufacturing process is simpler, and the overall strength is higher.
First perpendicular portion 302, fourth perpendicular portion 308 is connected through first arc portion 310 respectively, second arc portion 311 and flat plate portion 301, form the holding tank 312 that is used for holding heat conduction silica gel between first arc portion 310 and the second arc portion 311, through setting up holding tank 312, make heat radiation structure 3 when bonding through heat conduction silica gel layer 4 with insulating layer 2, can make in heat conduction silica gel flows into holding tank 312, like this after heat conduction silica gel mummification, great increase heat radiation structure 3 and insulating layer 2's bonding strength.
The strip-shaped chamber 309 is of a structure with two open ends, and the through groove structure is matched, so that the radiating efficiency of hot gas in the strip-shaped chamber 309 is further improved.
The first vertical portion 302 and the fourth vertical portion 308 are fixedly connected by spot welding.
The embodiments of the present invention have been presented for purposes of illustration and description, and are not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.
Claims (7)
1. The utility model provides a semiconductor package substrate structure, includes the base plate body, and the bottom of base plate body is provided with the insulating layer, and the bottom of insulating layer is provided with heat radiation structure, and heat radiation structure passes through heat conduction silica gel layer with the insulating layer to be connected its characterized in that: the heat dissipation structure comprises a flat plate part which is attached to the insulating layer and a plurality of strip-shaped heat dissipation belts which are uniformly arranged at the bottom of the flat plate part at intervals;
the strip-shaped heat dissipation belt comprises a first vertical part, a first connecting part, a second vertical part, a flat part, a third vertical part, a second connecting part and a fourth vertical part which are sequentially connected, and the top ends of the first vertical part and the fourth vertical part are connected with the flat plate part;
the first vertical part and the fourth vertical part are attached, and a strip-shaped cavity is formed between the second vertical part and the third vertical part;
the flat portion is provided with a first through groove used for communicating the long-strip-shaped cavity with outside air.
2. The semiconductor package substrate structure of claim 1, wherein: and a second through groove and a third through groove which are used for communicating the long-strip-shaped cavity with the outside air are respectively arranged on the second vertical part and the third vertical part.
3. The semiconductor package substrate structure of claim 2, wherein: the first through groove, the second through groove and the third through groove are uniformly arranged at a plurality of positions at intervals along the length direction of the strip-shaped heat dissipation belt.
4. The semiconductor package substrate structure of claim 1, wherein: the flat plate part and the strip-shaped heat dissipation belt are of an integrally formed structure.
5. The semiconductor package substrate structure of claim 1, wherein: first perpendicular portion, fourth are erected the portion and are connected with the flat board portion through first arc portion, second arc portion respectively, form the holding tank that is used for holding heat conduction silica gel between first arc portion and the second arc portion.
6. The semiconductor package substrate structure of claim 1, wherein: the strip-shaped cavity is of a structure with two open ends.
7. The semiconductor package substrate structure of claim 1, wherein: the first vertical portion and the fourth vertical portion are fixedly connected in a spot welding mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022861022.0U CN213816126U (en) | 2020-12-03 | 2020-12-03 | Semiconductor packaging substrate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022861022.0U CN213816126U (en) | 2020-12-03 | 2020-12-03 | Semiconductor packaging substrate structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213816126U true CN213816126U (en) | 2021-07-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022861022.0U Active CN213816126U (en) | 2020-12-03 | 2020-12-03 | Semiconductor packaging substrate structure |
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| Country | Link |
|---|---|
| CN (1) | CN213816126U (en) |
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- 2020-12-03 CN CN202022861022.0U patent/CN213816126U/en active Active
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