CN213708546U - Special-shaped PBN and quartz combined crucible - Google Patents
Special-shaped PBN and quartz combined crucible Download PDFInfo
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- CN213708546U CN213708546U CN202022183332.1U CN202022183332U CN213708546U CN 213708546 U CN213708546 U CN 213708546U CN 202022183332 U CN202022183332 U CN 202022183332U CN 213708546 U CN213708546 U CN 213708546U
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Abstract
The utility model relates to the technical field of semiconductor material production, a special-shaped PBN and quartz combined crucible is disclosed, comprising a quartz crucible, a PBN crucible and a quartz cap, wherein the quartz crucible comprises a coating cavity and a quartz crucible seed crystal cavity, the PBN crucible comprises a raw material cavity and a PBN crucible seed crystal cavity, the PBN crucible and the quartz cap are both arranged in the inner cavity of the quartz crucible, the quartz cap is arranged at one end close to the opening of the quartz crucible, and the opening of the quartz cap faces the PBN crucible; the quartz crucible seed crystal cavity comprises a first seed crystal cavity section and a second seed crystal cavity section, the second seed crystal cavity section is tightly attached to the outer wall of the PBN crucible seed crystal cavity, and spacing regions are arranged between the first seed crystal cavity section of the quartz crucible and the PBN crucible as well as between the coating cavity and the PBN crucible. The utility model discloses can make semiconductor material obtain even growth interface and effectively improve crystal thermal stress concentration phenomenon, obtain jumbo size, low dislocation density height, the good crystal of homogeneity.
Description
Technical Field
The utility model relates to a semiconductor material produces technical field, especially relates to a dysmorphism PBN and quartzy combination crucible.
Background
The vertical temperature gradient freezing method (VGF) and the vertical Bridgman method (VB) are the most important production modes for producing compound semiconductor gallium arsenide (GaAs) and indium phosphide (InP) materials on the market at present, and after long-term development, a PBN crucible and a quartz crucible are used in the current production process, wherein the thermal conductivity of the PBN crucible along the direction of a crucible wall is 62.8W/(m.K)-1The high thermal conductivity results in the gap between the PBN crucible and the quartz crucible having a large influence on the thermal conduction of the thermal field.
When the PBN crucible and the quartz crucible are similar in shape and fit closely, a large amount of heat flow is conducted away through the PBN crucible wall and the quartz crucible, resulting in a larger radial heat flow, resulting in a concave growth interface shape for the semiconductor material. The depressed growth interface of the semiconductor material is easy to generate fine twin crystals at the edge, which is not beneficial to growing large-size crystals; in addition, the impurity concentration of the substrate obtained by the crystal in the same horizontal plane is distributed in a concentric circle, the uniformity is poor, and the PBN crucible and the quartz crucible are subjected to larger thermal stress from the seed crystal cavity to the inflection point of the conical part, so that the crystal bar and the processed substrate are easy to crack and fragment, the concentration of the thermal stress is easy to generate polycrystal, and the dislocation density is high; when the two are completely separated, the phase change latent heat becomes a main factor influencing the shape of a growth interface, the growth interface also takes a concave melt shape, but the PBN crucible and the quartz crucible are completely separated, and the overall thermal stress is relatively average; when the positions of the seed crystal cavities of the PBN crucible and the quartz crucible are tightly attached and the cone angle and the equal diameter position are separated, the growth interface tends to be flat, which is beneficial to obtaining large-size crystals with low dislocation density and high uniformity, but the problem of stress concentration at the positions of the seed crystal cavities and the cone angle is still difficult to solve.
However, the gap between the PBN crucible and the quartz crucible is not considered in the industrial mass production of GaAs and InP materials in the market at present, the shapes of the PBN crucible and the quartz crucible are basically similar, and the gap between the PBN crucible and the quartz crucible cannot be well controlled.
SUMMERY OF THE UTILITY MODEL
In view of the above, the present invention provides a special-shaped combination crucible of PBN and quartz, which is characterized in that a vacuum area is formed around the position from the beginning of the initial seed crystal fusion to the end of the crystal growth during the growth of the compound semiconductor crystal by the combination of the special-shaped quartz crucible and the PBN crucible, so that the semiconductor material can obtain a flat growth interface and effectively improve the thermal stress concentration of the crystal, thereby obtaining a large-sized crystal with low dislocation density and good uniformity.
The utility model discloses an above-mentioned technical problem is solved to following technical means:
a special-shaped PBN and quartz combined crucible comprises a quartz crucible, a PBN crucible and a quartz cap, wherein the quartz crucible comprises a coating cavity and a quartz crucible seed crystal cavity, the PBN crucible comprises a raw material cavity and a PBN crucible seed crystal cavity, the PBN crucible and the quartz cap are both arranged in an inner cavity of the quartz crucible, the quartz cap is arranged at one end close to an opening of the quartz crucible, and the opening of the quartz cap faces the PBN crucible; the quartz crucible seed crystal cavity comprises a first seed crystal cavity section and a second seed crystal cavity section, the second seed crystal cavity section is tightly attached to the outer wall of the PBN crucible seed crystal cavity, and spacing regions are arranged between the first seed crystal cavity section of the quartz crucible and the PBN crucible as well as between the coating cavity and the PBN crucible.
The utility model discloses an inner wall in second seed crystal chamber section closely laminates with the outer wall in PBN crucible seed crystal chamber, can in time lead away the phase transition latent heat in the crystal growth process, mould suitable temperature gradient, the seed melting degree of depth is in the position that PBN crucible seed crystal chamber is relative with the first seed crystal chamber section of quartz crucible, be provided with the compartment between quartz crucible's first seed crystal chamber section and cladding chamber and the PBN crucible, after the evacuation, be vacuum state between the quartz crucible of compartment position and the PBN crucible, guarantee that initial growth interface is to the radial heat exchange of the end of growth with giving first place to in the seed crystal butt fusion process, heat exchange is few, heat conduction efficiency is low; the heat is mainly formed in the axial direction to form a heat exchange system which takes a melt → a growth interface → a crystal → a seed crystal → a low-temperature zone at the bottom of the single crystal furnace as a leading part, so that the growth interface is flat in the growth process and the overall thermal stress is average, and the semiconductor material crystal with large size, low dislocation density, good uniformity and average thermal stress can be obtained.
Further, a first step is arranged on the inner wall of the quartz crucible, a second step is arranged on the inner wall of the PBN crucible, and the outer wall of the second step is tightly attached to the inner wall of the first step. The first step and the second step are tightly attached, the PBN crucible can be placed on the inner wall of the quartz crucible to bear the PBN crucible, and an annular sealing belt can be formed between the inner wall of the quartz crucible and the outer wall of the PBN crucible, so that a partition area is formed between the outer wall of a raw material cavity of the PBN crucible and the inner part of the quartz crucible.
Further, the coating cavity of the quartz crucible comprises a first quartz crucible section and a second quartz crucible section, the first quartz crucible section, the second quartz crucible section, the first seed crystal cavity section and the second seed crystal cavity section are sequentially connected and have diameters which are sequentially reduced, and the first step is arranged at the connection position of the first quartz crucible section and the second quartz crucible section; the PBN crucible also comprises a first PBN crucible section, the raw material cavity and the PBN crucible seed crystal cavity are sequentially connected, the diameters of the first PBN crucible section, the raw material cavity and the PBN crucible seed crystal cavity are sequentially reduced, and the second step is arranged at the joint of the first PBN crucible section and the raw material cavity. The shape is similar to the shapes of the PBN crucible and the quartz crucible in the prior art, and is beneficial to the growth of crystals.
Furthermore, a quartz crucible conical section is arranged between the second quartz crucible section and the first seed crystal cavity section, and a PBN crucible seed conical section is arranged between the raw material cavity and the PBN crucible seed crystal cavity. The shape is similar to the shapes of the PBN crucible and the quartz crucible in the prior art, and is beneficial to the growth of crystals.
Further, the height of the first PBN crucible section is smaller than the height of the first quartz crucible section. Therefore, a space is reserved in the quartz crucible for placing the quartz cap.
Further, the outer diameter of the quartz cap is larger than the inner diameter of the PBN crucible. Therefore, the damage of the PBN crucible by the quartz cap in the vacuum-pumping process can be avoided.
Further, the PBN crucible is movably arranged in the quartz crucible. Therefore, the PBN crucible can be detached from the quartz crucible, and the cleaning and the recycling are convenient.
The utility model has the advantages that:
the utility model discloses an inner wall in second seed crystal chamber section closely laminates with the outer wall in PBN crucible seed crystal chamber, can in time lead away the phase transition latent heat in the crystal growth process, mould suitable temperature gradient, the seed melting degree of depth is in the position that PBN crucible seed crystal chamber is relative with the first seed crystal chamber section of quartz crucible, be provided with the compartment between quartz crucible's first seed crystal chamber section and cladding chamber and the PBN crucible, after the evacuation, be vacuum state between the quartz crucible of compartment position and the PBN crucible, guarantee that initial growth interface is to the radial heat exchange of the end of growth with giving first place to in the seed crystal butt fusion process, heat exchange is few, heat conduction efficiency is low; compared with the prior art, the utility model discloses can effectively improve the sunken degree of crystal growth in-process growth interface, obtain relatively flat growth interface, reduce the tiny twin crystal of crystal edge and seed crystal and the polycrystalline production probability in crystal pyramis inflection point position, improve crystallization rate and crystal homogeneity, improve the thermal stress distribution state of crystal simultaneously, reduce the production probability of collapsing piece, piece etc. in the substrate course of working, obtain jumbo size, the high crystal of low dislocation density.
Drawings
FIG. 1 is a schematic structural diagram of a special-shaped PBN and quartz combined crucible of the present invention.
The device comprises a quartz crucible 1, a PBN crucible 2, a quartz cap 3, a first quartz crucible section 101, a second quartz crucible section 102, a quartz crucible conical section 103, a first seed crystal cavity section 104, a second seed crystal cavity section 105, a first PBN crucible section 201, a raw material cavity 202, a PBN crucible seed conical section 203, a PBN crucible seed crystal cavity 204, a sealing ring 4 and a spacer region 5.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings:
as shown in fig. 1:
a special-shaped PBN and quartz combined PBN crucible comprises a quartz crucible 1, a PBN crucible 2 and a quartz cap 3, wherein the PBN crucible 2 and the quartz cap 3 are movably arranged in an inner cavity of the quartz crucible 1; the quartz crucible 1 comprises a first quartz crucible section 101, a second quartz crucible section 102, a quartz crucible conical section 103, a first seed crystal cavity section 104 and a second seed crystal cavity section 105 which are integrally formed in sequence from top to bottom, and the diameters of the first quartz crucible section 101, the second quartz crucible section 102, the first seed crystal cavity section 104 and the second seed crystal cavity section 105 are reduced in sequence; the PBN crucible 2 comprises a first PBN crucible section 201, a raw material cavity 202, a PBN crucible seed conical section 203 and a PBN crucible seed crystal cavity 204 which are integrally formed in sequence from top to bottom, and the diameters of the first PBN crucible section 201, the raw material cavity 202 and the PBN crucible seed crystal cavity 204 are reduced in sequence.
A first step is formed at the joint of the first quartz crucible section 101 and the second quartz crucible section 102 of the quartz crucible 1, a second step is formed at the joint of the first PBN crucible section 201 and the raw material cavity 202 of the PBN crucible 2, and the outer wall of the second step is tightly attached to the inner wall of the first step to form a sealing ring 4; the quartz cap 3 is arranged at one end close to the opening of the quartz crucible 1, the opening of the quartz cap 3 faces downwards, and the outer diameter of the quartz cap 3 is larger than the inner diameter of the PBN crucible 2.
The inner wall of the second seed crystal cavity section 105 of the quartz crucible 1 is tightly attached to the outer wall of the seed crystal cavity 204 of the PBN crucible, and a spacer 5 is arranged among the first seed crystal cavity section 104 of the quartz crucible 1, the conical section 103 of the quartz crucible, the second quartz crucible section 102 and the outer wall of the PBN crucible 2.
The utility model discloses a use method as follows:
when the device is used, firstly, the quartz crucible 1, the quartz cap 3, the PBN crucible 2, the raw materials, the seed crystals and the like are cleaned, then the quartz crucible 1 is horizontally arranged, the PBN crucible 2 is placed into the quartz crucible 1, and when the PBN crucible 2 is placed, the quartz crucible 1 is in a horizontal state and is combined with the PBN crucible 2, so that the damage of the PBN crucible 2 caused by the combination after charging is avoided.
Then, the seed crystal is put into a PBN crucible seed crystal chamber 204 of the PBN crucible 2, the raw material is put into a raw material chamber 202 of the PBN crucible 2, the quartz cap 3 is put into the quartz crucible 1, and after the vacuum pumping, the quartz crucible 1 and the quartz cap 3 are sealed by welding with oxyhydrogen flame. And then the PBN crucible 2 formed by combining the quartz crucible 1 and the PBN crucible 2 is placed in a single crystal furnace, the heating element of the single crystal furnace is controlled to be heated to completely melt the raw materials, the seed crystals start to be welded after the temperature is stable, and the depth of the seed crystals is between the second seed crystal cavity sections 105. The utility model discloses an inner wall of second seed crystal chamber section 105 closely laminates with the outer wall of PBN crucible seed crystal chamber 204, can in time lead away the phase transition latent heat in the crystal growth process, mould suitable temperature gradient, the seed-melting degree of depth is in the position that PBN crucible seed crystal chamber 204 is relative with first seed crystal chamber section 104 of quartz crucible 1, quartz crucible toper section 103, be provided with compartment 5 between second quartz crucible section 102 and the PBN crucible 2, after the evacuation, be vacuum state between quartz crucible 1 and the PBN crucible 2 of compartment 5 position, guarantee to grow radial heat exchange of interface to the end of growth and use the heat radiation to give first place to in the seed crystal butt fusion in-fusion process, the heat exchange is few, heat conduction efficiency is low; the heat is mainly formed in the axial direction to form a heat exchange system which takes a melt → a growth interface → a crystal → a seed crystal → a low-temperature zone at the bottom of the single crystal furnace as a leading part, so that the growth interface is flat in the growth process and the overall thermal stress is average, and the semiconductor material crystal with large size, low dislocation density, good uniformity and average thermal stress can be obtained.
And finally, starting to grow the single crystal after keeping the temperature for a period of time, and cooling and discharging after the growth is finished.
Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art will understand that the present invention can be modified or replaced with other embodiments without departing from the spirit and scope of the present invention, which should be construed as limited only by the appended claims. The technology, shape and construction parts which are not described in detail in the present invention are all known technology.
Claims (7)
1. The utility model provides a dysmorphism PBN and quartzy combination crucible, includes quartz crucible, PBN crucible and quartz cap, quartz crucible includes cladding chamber and quartz crucible seed crystal chamber, the PBN crucible includes raw materials chamber and PBN crucible seed crystal chamber, its characterized in that: the PBN crucible and the quartz cap are both arranged in an inner cavity of the quartz crucible, the quartz cap is arranged at one end close to an opening of the quartz crucible, and the opening of the quartz cap faces the PBN crucible; the quartz crucible seed crystal cavity comprises a first seed crystal cavity section and a second seed crystal cavity section, the second seed crystal cavity section is tightly attached to the outer wall of the PBN crucible seed crystal cavity, and spacing regions are arranged between the first seed crystal cavity section of the quartz crucible and the PBN crucible as well as between the coating cavity and the PBN crucible.
2. The combination profiled PBN and quartz crucible of claim 1, wherein: the inner wall of the quartz crucible is provided with a first step, the inner wall of the PBN crucible is provided with a second step, and the outer wall of the second step is tightly attached to the inner wall of the first step.
3. A shaped PBN and quartz combination crucible as claimed in claim 2, wherein: the coating cavity of the quartz crucible comprises a first quartz crucible section and a second quartz crucible section, the first quartz crucible section, the second quartz crucible section, the first seed crystal cavity section and the second seed crystal cavity section are sequentially connected and have diameters which are sequentially reduced, and the first step is arranged at the connection position of the first quartz crucible section and the second quartz crucible section; the PBN crucible also comprises a first PBN crucible section, the raw material cavity and the PBN crucible seed crystal cavity are sequentially connected, the diameters of the first PBN crucible section, the raw material cavity and the PBN crucible seed crystal cavity are sequentially reduced, and the second step is arranged at the joint of the first PBN crucible section and the raw material cavity.
4. A shaped PBN and quartz combination crucible as claimed in claim 3, wherein: a quartz crucible conical section is arranged between the second quartz crucible section and the first seed crystal cavity section, and a PBN crucible seed conical section is arranged between the raw material cavity and the PBN crucible seed crystal cavity.
5. The combination profiled PBN and quartz crucible as claimed in claim 4, wherein: the height of the first PBN crucible section is smaller than that of the first quartz crucible section.
6. The combination profiled PBN and quartz crucible as claimed in claim 5, wherein: the outer diameter of the quartz cap is larger than the inner diameter of the PBN crucible.
7. The combination profiled PBN and quartz crucible of claim 6, wherein: the PBN crucible is movably arranged in the quartz crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022183332.1U CN213708546U (en) | 2020-09-29 | 2020-09-29 | Special-shaped PBN and quartz combined crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022183332.1U CN213708546U (en) | 2020-09-29 | 2020-09-29 | Special-shaped PBN and quartz combined crucible |
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| Publication Number | Publication Date |
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| CN213708546U true CN213708546U (en) | 2021-07-16 |
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| CN202022183332.1U Active CN213708546U (en) | 2020-09-29 | 2020-09-29 | Special-shaped PBN and quartz combined crucible |
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