CN213692001U - Novel discrete power semiconductor device - Google Patents
Novel discrete power semiconductor device Download PDFInfo
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- CN213692001U CN213692001U CN202022490543.XU CN202022490543U CN213692001U CN 213692001 U CN213692001 U CN 213692001U CN 202022490543 U CN202022490543 U CN 202022490543U CN 213692001 U CN213692001 U CN 213692001U
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Abstract
The utility model relates to a novel power semiconductor discrete device, including switch tube, first diode, second diode, base plate, first pin, second pin, third pin, fourth pin and the plastic-sealed body, switch tube, first diode and second diode all set up on the base plate, first diode and second diode and switch tube connection. The novel power semiconductor discrete device jointly encapsulates two diodes in the same discrete device, can save layout space, reduces loop stray inductance, optimizes lead inductance between devices, improves circuit working performance, and lays a foundation for improving power density. When the method is applied to buck or boost circuits, the requirement of topology on the switching tube can be met only by selecting one device, the number and the size of electronic components are reduced, the power density of the converter can be further improved, and the lead inductance connected between the devices can be effectively reduced.
Description
Technical Field
The utility model relates to a power semiconductor device makes technical field, especially relates to a novel power semiconductor discrete device.
Background
With the development of power semiconductor manufacturing technology, power electronic converters are continuously pursuing higher power density, and in single-switch main power circuits such as buck and boost, a switching tube and two diodes are generally required, wherein one diode provides a freewheeling circuit for the switching-off of the switching tube, and the other diode keeps the circuit operating normally. As shown in fig. 1 and 2, a product that jointly packages a switching tube and a diode in the same discrete device is available at present, the package type is TO247, the switching tube and the diode are vertically arranged on a copper substrate, an anode of the diode is connected with an emitter of the switching tube, a cathode of the diode is connected with a collector of the switching tube, the diode is a freewheeling device, the switching tube is generally an IGBT or MOSFET, if the device is applied TO a buck or boost type circuit, a diode is additionally arranged TO ensure the circuit topology integrity, firstly, the number and volume of electronic components are increased, which is not favorable for improving the power density of the converter, and lead inductance connected between the devices is increased.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a save overall arrangement space, reduce the novel power semiconductor discrete device of return circuit stray inductance.
The utility model provides a technical scheme does: a novel power semiconductor discrete device comprises a switch tube, a first diode, a second diode, a substrate, a first pin, a second pin, a third pin and a fourth pin, wherein the switch tube, the first diode and the second diode are all arranged on the substrate, a gate pole of the switch tube is connected with the first pin, an emitter is connected with the second pin, and a collector is connected with the third pin; the first diode and the second diode are connected with the switch tube.
The anode of the first diode is connected with the emitter of the switching tube, and the cathode of the first diode is connected with the collector of the switching tube; the anode of the second diode is connected with the fourth pin, and the cathode of the second diode is connected with the emitter of the switch tube, or the anode of the second diode is connected with the collector of the switch tube, and the cathode of the second diode is connected with the fourth pin.
Wherein the first diode and the second diode are arranged side by side on the upper part of the substrate, and the switch tube is arranged on the lower part of the substrate.
When the anode of the second diode is connected with the fourth pin and the cathode of the second diode is connected with the emitter of the switching tube, the four pins are arranged in a mode of sequentially forming a third pin, a second pin, a fourth pin and a first pin from left to right.
When the anode of the second diode is connected with the collector of the switching tube and the cathode of the second diode is connected with the fourth pin, the four pins are arranged in a manner of sequentially forming a first pin, a third pin, a fourth pin and a second pin from left to right.
The first diode and the second diode are common diodes, fast recovery diodes, Schottky diodes or wide bandgap semiconductor diodes.
Wherein, the switch tube is IGBT or MOSFET.
The novel power semiconductor discrete device further comprises a plastic package body, and the plastic package body is used for packaging the switch tube, the first diode, the second diode and the substrate.
The utility model has the advantages that: the novel power semiconductor discrete device jointly encapsulates two diodes in the same discrete device, can save layout space, reduces loop stray inductance, optimizes lead inductance between devices, improves circuit working performance, and lays a foundation for improving power density. When the method is applied to buck or boost circuits, the requirement of topology on the switching tube can be met only by selecting one device, the number and the size of electronic components are reduced, the power density of the converter can be further improved, and the lead inductance connected between the devices can be effectively reduced.
Drawings
Fig. 1 is a schematic diagram of a power semiconductor discrete device in the prior art;
FIG. 2 is a circuit schematic of the power semiconductor discrete device of FIG. 1;
fig. 3 is a schematic structural diagram of a first embodiment of the novel power semiconductor discrete device according to the present invention;
FIG. 4 is a circuit schematic of the power semiconductor discrete device of FIG. 3;
fig. 5 is a circuit diagram of an application of the novel power semiconductor discrete device embodiment of the present invention to a buck circuit;
fig. 6 is a schematic structural diagram of a second embodiment of the novel power semiconductor discrete device according to the present invention;
fig. 7 is a circuit schematic of the power semiconductor discrete device of fig. 6;
fig. 8 is a circuit diagram of a boost circuit to which the second embodiment of the novel power semiconductor discrete device of the present invention is applied.
Wherein, 1, a switch tube; 2. a first diode; 3. a second diode; 4. a substrate; 5. a first pin; 6. a second pin; 7. a third pin; 8. a fourth pin; 9. and (7) molding the body.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As an embodiment one of the novel power semiconductor discrete device of the present invention, as shown in fig. 3 to fig. 5, the power semiconductor discrete device includes a switch tube 1, a first diode 2, a second diode 3, a substrate 4, a first pin 5, a second pin 6, a third pin 7, and a fourth pin 8, the switch tube 1, the first diode 2, and the second diode 3 are all disposed on the substrate 4, a gate G (also called a gate) of the switch tube 1 is connected to the first pin 5, an emitter E is connected to the second pin 6, and a collector C is connected to the third pin 7; the first diode 2 and the second diode 3 are connected with the switching tube 1.
In this embodiment, the anode of the first diode 2 is connected to the emitter E of the switching tube 1, and the cathode is connected to the collector C of the switching tube 1 (the first diode 2 and the switching tube 1 are connected in anti-parallel); the anode of the second diode 3 is connected with the fourth pin 8, and the cathode of the second diode is connected with the emitter E of the switching tube 1; the plastic package body 9 is used for packaging the switching tube 1, the first diode 2, the second diode 3 and the substrate 4.
In this embodiment, the novel power semiconductor discrete device further includes a plastic package body 9, and the plastic package body 9 is used for packaging the switching tube 1, the first diode 2, the second diode 3 and the substrate 4.
In this embodiment, the novel power semiconductor discrete device adopts a TO247-4 package structure, and the arrangement of the four pins sequentially includes a third pin 7, a second pin 6, a fourth pin 8 and a first pin 5 from left TO right.
In this embodiment, the switch tube 1 may be an IGBT or an MOSFET, and the pin connection relationships are all completely the same.
In the present embodiment, the first diode 2 and the second diode 3 are arranged side by side on the upper portion of the substrate 4, and the switch tube 1 is arranged on the lower portion of the substrate 4, so that the whole power semiconductor discrete device looks more square.
As shown in fig. 5, in order to apply the embodiment of the novel power semiconductor discrete device of the present invention to a circuit diagram of a buck circuit, which is a classic dc step-down circuit and is also one of the application topologies of the present embodiment, the anode of the second diode 3 is connected to an external circuit, and the gate of the switching tube 1 is connected to an external driving circuit; vin is a dc input power supply, Vout is a dc output power supply, L1 is an inductor, C1 is a capacitor, and the device in the dashed circle is the device in the first embodiment. The first diode 2 can provide a follow current loop at the turn-off moment of the switch tube 1 to prevent the switch tube 1 from being damaged by overvoltage, and the second diode 3 is used for keeping the circuit normally operating; the combined packaging structure can effectively reduce lead inductance connected between the switching devices and is easy for layout and connection of external circuits.
The novel power semiconductor discrete device jointly encapsulates two diodes in the same discrete device, can save layout space, reduces loop stray inductance, optimizes lead inductance between devices, improves circuit working performance, and lays a foundation for improving power density. When the method is applied to buck or boost circuits, the requirement of topology on the switching tube can be met only by selecting one device, the number and the size of electronic components are reduced, the power density of the converter can be further improved, and the lead inductance connected between the devices can be effectively reduced.
As an embodiment two of the novel power semiconductor discrete device of the present invention, as shown in fig. 6 to fig. 8, the difference from the embodiment one lies in that the connection mode of the second diode 3 is different, and this embodiment is that the anode of the second diode 3 is connected with the collector of the switch tube 1, and the cathode is connected with the fourth pin 8.
In this embodiment, the novel power semiconductor discrete device adopts a TO247-4 packaging structure, and the arrangement of the four pins sequentially includes a first pin 5, a third pin 7, a fourth pin 8 and a second pin 6 from left TO right.
As shown in fig. 8, for the novel discrete power semiconductor device of the present invention, an embodiment of the circuit diagram applied to a boost circuit is a classic dc boost circuit, which is also one of the application topologies of the present embodiment, the cathode of the second diode 3 is connected to an external circuit, the gate of the switching tube 1 is connected to an external driving circuit, Vin is a dc input power supply, Vout is a dc output power supply, L1 is an inductor, C1 is an electric capacitor, and the device in the dashed circle frame is the device in the second embodiment. The first diode 2 can provide a follow current loop at the turn-off moment of the switch tube 1 to prevent the switch tube 1 from being damaged by overvoltage, and the second diode 3 is used for keeping the circuit normally operating; the combined packaging structure can effectively reduce lead inductance connected between the switching devices and is easy for layout and connection of external circuits.
In the present invention, the first diode 2 and the second diode 3 may be a general diode, a fast recovery diode, a schottky diode, or a wide bandgap semiconductor diode, including SiC and GaN.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (8)
1. A novel power semiconductor discrete device is characterized by comprising a switch tube, a first diode, a second diode, a substrate, a first pin, a second pin, a third pin and a fourth pin, wherein the switch tube, the first diode and the second diode are all arranged on the substrate, a gate pole of the switch tube is connected with the first pin, an emitter of the switch tube is connected with the second pin, and a collector of the switch tube is connected with the third pin; the first diode and the second diode are connected with the switch tube.
2. The novel power semiconductor discrete device as claimed in claim 1, wherein the anode of the first diode is connected to the emitter of the switching tube, and the cathode is connected to the collector of the switching tube; the anode of the second diode is connected with the fourth pin, and the cathode of the second diode is connected with the emitter of the switch tube, or the anode of the second diode is connected with the collector of the switch tube, and the cathode of the second diode is connected with the fourth pin.
3. The novel power semiconductor discrete device as claimed in claim 1, wherein the first diode and the second diode are arranged side by side on the upper portion of the substrate, and the switching tube is arranged on the lower portion of the substrate.
4. The novel power semiconductor discrete device as claimed in claim 2, wherein when the anode of the second diode is connected to the fourth pin and the cathode is connected to the emitter of the switching tube, the four pins are arranged from left to right as the third pin, the second pin, the fourth pin and the first pin.
5. The novel power semiconductor discrete device as claimed in claim 2, wherein when the anode of the second diode is connected to the collector of the switching tube and the cathode is connected to the fourth pin, the four pins are arranged from left to right as the first pin, the third pin, the fourth pin and the second pin.
6. The novel power semiconductor discrete device as claimed in claim 1, wherein the first and second diodes are normal diodes, fast recovery diodes, schottky diodes or wide bandgap semiconductor diodes.
7. The novel power semiconductor discrete device as claimed in claim 1, wherein the switching tube is an IGBT or a MOSFET.
8. The novel power semiconductor discrete device as claimed in claim 1, further comprising a molding compound for encapsulating the switching tube, the first diode, the second diode and the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022490543.XU CN213692001U (en) | 2020-11-02 | 2020-11-02 | Novel discrete power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022490543.XU CN213692001U (en) | 2020-11-02 | 2020-11-02 | Novel discrete power semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213692001U true CN213692001U (en) | 2021-07-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022490543.XU Active CN213692001U (en) | 2020-11-02 | 2020-11-02 | Novel discrete power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213692001U (en) |
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2020
- 2020-11-02 CN CN202022490543.XU patent/CN213692001U/en active Active
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