CN212367131U

CN212367131U - Boost topology circuit

Info

Publication number: CN212367131U
Application number: CN202021029280.6U
Authority: CN
Inventors: 赖金铃; 雷添财; 卢晓
Original assignee: Fuzhou Snowman New Energy Technology Co ltd
Current assignee: Fujian Snowman Hydrogen Technology Co.,Ltd.
Priority date: 2020-06-08
Filing date: 2020-06-08
Publication date: 2021-01-15
Anticipated expiration: 2030-06-08

Abstract

The utility model relates to a topological circuit technical field steps up, in particular to topological circuit steps up, including inductance Ls, transistor IGBT1, transistor IGBT2, load and fuel cell pile, transistor IGBT 1's projecting pole is connected with inductance Ls's one end and transistor IGBT 2's collecting electrode electricity respectively, transistor IGBT 1's collecting electrode and the anodal electric connection of load, transistor IGBT 2's projecting pole respectively with the negative pole of fuel cell pile and the negative pole electric connection of load, inductance Ls's the other end is connected with the anodal electricity of fuel cell pile, through setting up inductance Ls, transistor IGBT1, transistor IGBT2, load and fuel cell pile, make the state of opening at transistor IGBT1 and transistor IGBT2 approximate zero voltage open, thereby transistor IGBT1 and transistor IGBT 2's the loss of opening has been reduced, the holistic efficiency of circuit has been improved.

Description

Boost topology circuit

Technical Field

The utility model relates to a topological circuit technical field, in particular to topological circuit steps up.

Background

Hydrogen fuel cell vehicles are receiving wide attention worldwide as an important direction for new energy vehicles. Because the output electrical characteristics of the hydrogen fuel cell are softer, and the output voltage is low and the current is high under the condition of high-power output, a direct-current converter with high voltage boosting transformation ratio is needed.

At present, a BOOST DC-DC direct current converter adopts a non-isolated BOOST topology, a BOOST inductor, a transistor IGBT, a diode, a capacitor and the like are required in the BOOST topology, although the topology is simple, the overall efficiency is not high, and the main reason is that the turn-on and turn-off loss of the transistor IGBT is serious.

SUMMERY OF THE UTILITY MODEL

In order to overcome the defects of the prior art, the utility model aims to solve the technical problems that: provided is a boost topology circuit capable of reducing the turn-on loss of a transistor IGBT.

In order to solve the technical problem, the utility model discloses a technical scheme be:

a boost topology circuit comprises an inductor Ls, a transistor IGBT1, a transistor IGBT2, a load and a fuel cell stack, wherein an emitter electrode of the transistor IGBT1 is electrically connected with one end of the inductor Ls and a collector electrode of the transistor IGBT2 respectively, a collector electrode of the transistor IGBT1 is electrically connected with an anode electrode of the load, an emitter electrode of the transistor IGBT2 is electrically connected with a cathode electrode of the fuel cell stack and a cathode electrode of the load respectively, and the other end of the inductor Ls is electrically connected with the anode electrode of the fuel cell stack.

And further, the fuel cell stack further comprises an inductor L, wherein one end of the inductor L is electrically connected with the anode of the fuel cell stack, and the other end of the inductor L is electrically connected with the other end of the inductor Ls.

Further, the inductor L is a boost inductor.

Further, the device further comprises a capacitor C1, one end of the capacitor C1 is electrically connected with the collector of the transistor IGBT1 and the positive electrode of the load, and the other end of the capacitor C1 is electrically connected with the emitter of the transistor IGBT2 and the negative electrode of the load.

Further, the inductor Ls is a saturated inductor.

The beneficial effects of the utility model reside in that:

by arranging the inductor Ls, the transistor IGBT1, the transistor IGBT2, the load and the fuel cell stack, the switch-on state of the transistor IGBT1 and the transistor IGBT2 is approximately zero voltage, so that the switch-on loss of the transistor IGBT1 and the transistor IGBT2 is reduced, and the overall efficiency of the circuit is improved.

Drawings

Fig. 1 shows a topology of a boost topology according to the present invention;

description of reference numerals:

1. a load; 2. a fuel cell stack.

Detailed Description

In order to explain the technical content, the objects and the effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.

Referring to fig. 1, the technical solution provided by the present invention is:

From the above description, the beneficial effects of the present invention are:

As is apparent from the above description, by providing the inductance L, the turn-on loss of the transistor IGBT1 and the transistor IGBT2 can be further reduced, and the efficiency of the entire circuit can be improved.

Further, the inductor L is a boost inductor.

As is apparent from the above description, by providing the capacitor C1, the output voltage of the circuit can be smoothly filtered, the influence of voltage overshoot and instantaneous overvoltage on the transistor IGBT1 and the transistor IGBT2 can be prevented, and the voltage on the dc bus can also be stabilized.

Further, the inductor Ls is a saturated inductor.

From the above description, it can be known that the inductor Ls is a saturated inductor, which can improve the efficiency of the whole machine.

Referring to fig. 1, a first embodiment of the present invention is:

referring to fig. 1, a boost topology circuit includes an inductor Ls (with an inductance value of mH), a transistor IGBT1 (model number FF600R12ME4, manufacturer number infinenon), a transistor IGBT2 (model number FF600R12ME4, manufacturer number infinenon), a load 1 and a fuel cell stack 2 (using a fuel cell stack with a power of 30KW, manufacturer number hydrodynamics), an emitter of the transistor IGBT1 is electrically connected to one end of the inductor Ls and a collector of the transistor IGBT2, a collector of the transistor IGBT1 is electrically connected to an anode of the load 1, an emitter of the transistor IGBT2 is electrically connected to a cathode of the fuel cell stack 2 and a cathode of the load 1, respectively, and the other end of the inductor Ls is electrically connected to an anode of the fuel cell stack 2.

Referring to fig. 1, the boost topology circuit further includes an inductor L (with an inductance value of 180uH), one end of the inductor L is electrically connected to the anode of the fuel cell stack 2, and the other end of the inductor L is electrically connected to the other end of the inductor Ls; the inductor L is a boosting inductor.

Referring to fig. 1, the boost topology circuit further includes a capacitor C1 (with a capacitance value of 500uF), one end of the capacitor C1 is electrically connected to the collector of the transistor IGBT1 and the positive electrode of the load 1, and the other end of the capacitor C1 is electrically connected to the emitter of the transistor IGBT2 and the negative electrode of the load 1.

The inductor Ls is a saturated inductor.

The working principle of the boost topology circuit is as follows:

the operation process of the whole circuit is further explained by explaining the operation process of the transistor IGBT1 in detail;

at stage 0-t 1: this phase is the initial state of transistor IGBT1, when the gate of transistor IGBT1 is at a negative voltage, the voltage between the collector and emitter of transistor IGBT1 (denoted Vce) is equal to the input voltage (Vin), when the current through transistor IGBT1 (denoted Ic) is zero;

at stage t1-t 2: at this stage, the transistor IGBT1 is turned on, at this time, since the gate of the transistor IGBT1 is at a high level, the gate of the transistor IGBT1 starts to open, Vce starts to decrease, and at this time, since the initial permeability of the inductor Ls is very high, the inductance value of the inductor Ls in the initial state is very high; since the inductance of the inductor Ls is very high, the current is approximately broken after passing through the inductor L and the inductor Ls, so Ic is almost zero;

at stage t2-t 3: the stage is in the turn-on process of the transistor IGBT1, Ic gradually increases as the inductance value of the inductor Ls becomes smaller, and when the current of the inductor Ls reaches the saturation current value, the inductor Ls is immediately saturated, and at this time, the transistor IGBT1 is in a zero-voltage turn-on (ZVS) state, and the turn-on loss of the transistor IGBT1 is zero.

At stage t3-t 4: the stage is in a switching-on state of the transistor IGBT1, the transistor IGBT1 is completely switched on, and the inductor L is charged and stored with the input voltage;

at stage t4-t 5: the stage is a turn-off process of the transistor IGBT1, at the moment, the gate of the transistor IGBT1 is driven at a negative voltage, the current Ic flowing through the transistor IGBT1 is gradually reduced, and Vce is gradually increased to an output voltage;

at stage t5-t 6: at this stage, the transistor IGBT1 is in an off state, at which time the transistor IGBT1 is completely turned off, and the current Ic flowing through the transistor IGBT1 is zero;

in summary, the steady-state operation of the whole circuit is the process of t1-t6 cycle, the turn-on process of the transistor IGBT1 can be turned on at the stage of t1-t3 and is approximately zero voltage, and the turn-on loss is almost zero, so that the whole efficiency of the circuit is improved.

To sum up, the utility model provides a pair of topological circuit steps up through setting up inductance Ls, transistor IGBT1, transistor IGBT2, load and fuel cell pile for the on-state at transistor IGBT1 and transistor IGBT2 is close zero voltage and is switched on, thereby has reduced the loss of opening of transistor IGBT1 and transistor IGBT2, has improved the holistic efficiency of circuit.

The above mentioned is only the embodiment of the present invention, and not the limitation of the patent scope of the present invention, all the equivalent transformations made by the contents of the specification and the drawings, or the direct or indirect application in the related technical field, are included in the patent protection scope of the present invention.

Claims

1. A boost topology circuit is characterized by comprising an inductor Ls, a transistor IGBT1, a transistor IGBT2, a load and a fuel cell stack, wherein an emitter of the transistor IGBT1 is electrically connected with one end of the inductor Ls and a collector of the transistor IGBT2 respectively, a collector of the transistor IGBT1 is electrically connected with an anode of the load, an emitter of the transistor IGBT2 is electrically connected with a cathode of the fuel cell stack and a cathode of the load respectively, and the other end of the inductor Ls is electrically connected with an anode of the fuel cell stack.

2. The boost topology circuit of claim 1, further comprising an inductor L, one end of the inductor L being electrically connected to the anode of the fuel cell stack, the other end of the inductor L being electrically connected to the other end of the inductor Ls.

3. The boost topology circuit of claim 2, wherein the inductor L is a boost inductor.

4. The boost topology circuit according to claim 1, further comprising a capacitor C1, wherein one end of the capacitor C1 is electrically connected to the collector of the transistor IGBT1 and the positive electrode of the load, respectively, and the other end of the capacitor C1 is electrically connected to the emitter of the transistor IGBT2 and the negative electrode of the load, respectively.

5. The boost topology circuit of claim 1, wherein the inductor Ls is a saturated inductor.