CN213660384U

CN213660384U - IGBT module power terminal structure

Info

Publication number: CN213660384U
Application number: CN202022958518.XU
Authority: CN
Inventors: 温世达; 高远; 曹新明
Original assignee: Anhui Ruidi Microelectronics Co ltd
Current assignee: Anhui Ruidi Microelectronics Co ltd
Priority date: 2020-12-09
Filing date: 2020-12-09
Publication date: 2021-07-09
Anticipated expiration: 2030-12-09

Abstract

The utility model discloses a IGBT module power terminal structure, including the N terminal, range upon range of insulating material layer and the P terminal of range upon range of on insulating material layer on the N terminal, the shaping of bending as an organic whole is arranged electric capacity to N terminal and P terminal and female. The utility model discloses a IGBT module power terminal structure combines the terminal and female arranging as a whole to all take stromatolite structure, the at utmost has reduced stray inductance.

Description

IGBT module power terminal structure

Technical Field

The utility model belongs to the technical field of the semiconductor product, specifically speaking, the utility model relates to a IGBT module power terminal structure.

Background

When the existing IGBT module works normally, components such as an external busbar, a driving unit, a radiator and the like need to be connected, and functions such as inversion, chopping and rectification can be completed. When being connected with an external busbar, most of the adopted busbar structures are provided with two connecting ends which are respectively connected with the P and N terminals of the module and are fastened by screws. The connection mode is simple and easy, and a lot of workload is saved for both a module manufacturer and a terminal user.

The existing bus bar connection mode is simple and feasible, but has certain defects. In the connection mode, due to the requirement of insulation, the connection end extending out of the busbar and the P and N ends of the module form a loop, and the middle of the loop has a larger area. It is known that the larger the area enclosed by the loop, the higher the stray inductance of the loop. While stray inductance is one of the important parameters affecting the use of the module. The larger the stray inductance, the higher the spike voltage generated and the greater the risk of voltage breakdown failure of the module. If the stray inductance is too high, the module sometimes has to take voltage derating measures.

SUMMERY OF THE UTILITY MODEL

The utility model discloses aim at solving one of the technical problem that exists among the prior art at least. Therefore, the utility model provides a IGBT module power terminal structure, the purpose reduces stray inductance.

In order to realize the purpose, the utility model discloses the technical scheme who takes does: the IGBT module power terminal structure comprises an N terminal, an insulating material layer stacked on the N terminal and a P terminal stacked on the insulating material layer, wherein the N terminal, the P terminal and a busbar capacitor are integrally bent and formed.

The insulating material layer is an insulating glue film made of a plastic material.

The N terminal and the P terminal are made of metal materials.

The N terminal and the P terminal are made of copper materials.

The utility model discloses a IGBT module power terminal structure combines the terminal and female arranging as a whole to all take stromatolite structure, the at utmost has reduced stray inductance.

Drawings

The description includes the following figures, the contents shown are respectively:

fig. 1 is a cross-sectional view of the IGBT module power terminal structure of the present invention;

fig. 2 is a top view of the IGBT module power terminal structure of the present invention;

fig. 3 is a bottom view of the IGBT module power terminal structure of the present invention;

fig. 4 is a side view of the IGBT module power terminal structure of the present invention;

fig. 5 is a front view of the IGBT module power terminal structure of the present invention;

labeled as: 1. a bus capacitor; 2. a P terminal; 3. an N terminal; 4. a module housing; 5. a copper base plate; 6. a module upper cover; 7. and a module terminal.

Detailed Description

The following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings, for the purpose of helping those skilled in the art to understand more completely, accurately and deeply the conception and technical solution of the present invention, and to facilitate its implementation.

As shown in fig. 1 to 5, the utility model provides a IGBT module power terminal structure, including N terminal 3, range upon range of insulating material layer on N terminal 3 and range upon range of P terminal 2 on insulating material layer, N terminal 3 and P terminal 2 and female the forming of bending as an organic whole of arranging electric capacity 1 of arranging are combined as a whole with female the arranging with the terminal to adopt laminated structure, inlay in the module. With the structure, stray inductance generated by connecting the module and the busbar is reduced to a very low level, and normal use of the module is ensured.

Specifically, as shown in fig. 1 to 5, the N terminal 3 and the P terminal 2 are parallel, the insulating material layer is sandwiched between the N terminal 3 and the P terminal 2, the insulating material layer is an insulating film made of a plastic material, and the N terminal 3 and the P terminal 2 are made of a metal material, so that the stray inductance is reduced to the maximum extent while the insulating strength is ensured.

The most important factor for generating the stray inductance is the area surrounded by the loop, and the larger the area is, the larger the stray inductance is. The structure realizes that the positive end and the negative end are overlapped as much as possible, thereby reducing the loop area to the maximum extent and reducing the stray inductance.

The invention has been described above by way of example with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited by the above-described manner. Various insubstantial improvements are made by adopting the method conception and the technical proposal of the utility model; or without improvement, the above conception and technical solution of the present invention can be directly applied to other occasions, all within the protection scope of the present invention.

Claims

1. The utility model provides a IGBT module power terminal structure which characterized in that: the bus bar comprises an N terminal, an insulating material layer stacked on the N terminal and a P terminal stacked on the insulating material layer, wherein the N terminal, the P terminal and the bus bar capacitor are integrally bent and formed.

2. The IGBT module power terminal structure according to claim 1, characterized in that: the insulating material layer is an insulating glue film made of a plastic material.

3. The IGBT module power terminal structure according to claim 1 or 2, characterized in that: the N terminal and the P terminal are made of metal materials.

4. The IGBT module power terminal structure according to claim 3, characterized in that: the N terminal and the P terminal are made of copper materials.