CN202798478U - High-voltage frequency-converter power unit based on film capacitor - Google Patents
High-voltage frequency-converter power unit based on film capacitor Download PDFInfo
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- CN202798478U CN202798478U CN 201220362863 CN201220362863U CN202798478U CN 202798478 U CN202798478 U CN 202798478U CN 201220362863 CN201220362863 CN 201220362863 CN 201220362863 U CN201220362863 U CN 201220362863U CN 202798478 U CN202798478 U CN 202798478U
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Abstract
A high-voltage inverter power unit based on three film capacitors is characterized in that a rectification diode (2), bypass controllable silicon (10) and an IGBT power module (11) are arranged on a radiator (1); the film capacitors (6) mounted on a left side of the radiator (1) are connected with each other in parallel, are connected with an input terminal of the IGBT power module (11) and maintains electrical connection with the rectification diode (2) by a rectification bus (3); an input power terminal (4) is taken as power supply input of the rectification diode (2); and an output terminal of the IGBT power module (11) outputs toward outside of a housing (5) by an output power terminal (12). The film capacitors are adopted to be a rectified DC link and conventional manners of multi-capacitor series connection and using equal resistors are avoided, thereby simplifying electrical composition and the reducing busbar use amount. Compared with the conventional scheme, cost is saved by about 25%.
Description
Technical field
The utility model belongs to the semiconductor switch technical field, particularly a kind of high voltage transducer power unit of based thin film electric capacity.
Background technology
The circuit topological structure of power cell is illustrated in accompanying drawing 1.The Alternating Current Power Supply of outside three-phase is via diode rectifier, become direct current ingoing power unit, and the capacitor group charged, realize voltage stabilizing, the direct voltage of gained offers the single-phase H shape bridge inverter main circuit that is comprised of IGBT after the voltage stabilizing, inversion becomes the output voltage of given frequency, is used further to the series connection output with other power cell.Traditional capacitance group tandem plan, the complexity of circuit, the fault point is more, and manufacturing cost is high.
The utility model content
The utility model is for above deficiency, provide a kind of circuit simple, fault is few, lower-cost power unit cascade multi-level frequency conversion device and a horizontally-mounted power cell that designs, its characteristics are: adopt thin-film capacitor as the DC voltage-stabilizing link, avoid the series connection of capacitance group and the use of grading resistor; Adopt stacked bus, to reduce the impact on the IGBT power model of stray inductance in the circuit.
The utility model content
Given this, the utility model has designed the horizontally-mounted high voltage converter unit cabinet of a power cell cabinet body structure.
The technical scheme that its technical problem that solves the utility model adopts is as follows:
A kind of high voltage transducer power unit of based thin film electric capacity, comprise, radiator, rectifier diode, the rectification bus, the input power terminal, housing, thin-film capacitor, bus, bus insulating plate, hospital bus bar, the bypass controllable silicon, IGBT power model and power output terminal, wherein, rectifier diode, bypass controllable silicon and IGBT power model all are installed on the radiator, the thin-film capacitor that is positioned over the radiator left side carries out parallel connection by bus, bus insulating plate is every between bus, play the effect of insulation, the bus opposite side is connected in the input of IGBT power model, keep electrical connection by rectification bus and rectifier diode simultaneously, rectifier diode is inputted as its power supply with the input power terminal, the output of IGBT power model is exported outside housing by the power output terminal, and hospital bus bar is connected the power output terminal with the bypass controllable silicon.
The high voltage transducer power unit of a kind of based thin film electric capacity of the utility model, wherein, the number of thin-film capacitor is 3.
The high voltage transducer power unit of a kind of based thin film electric capacity of the utility model, wherein, bus is stacked bus.Electrical connection between the utility model thin-film capacitor and the IGBT power model is by stacked bus, and this implementation can strengthen stray inductance parasitic in the minimizing circuit of degree, reduces harmonic wave in the circuit to the impact of IGBT power model
The high voltage transducer power unit of a kind of based thin film electric capacity of the utility model, wherein, bus adopts copper coin boss-punching moulding process, this technique at first forms boss at bus, punch at boss, the boss height of this moulding is bus thickness and bus insulation plate thickness sum again, thereby has solved the problem that exists difference in height to be not easy to install when stacked bus is connected with thin-film capacitor, so that the binding post of thin-film capacitor can directly be connected with stacked bus by bolt, be convenient to install.
Advantage of the present utility model is:
Different from traditional capacitance group tandem plan, direct current after the utility model adopts thin-film capacitor to rectification carries out voltage stabilizing, because thin-film capacitor has higher voltage endurance capability, therefore can capacitance group not connected, also needn't use grading resistor that electric capacity is all pressed.Thereby greatly reduce the complexity of circuit, reduced the fault point, so that power cell structure is more compact, is conducive to assembling, transportation and safeguards the saving manufacturing cost.Adopt the DC link after thin-film capacitor serves as rectification, avoided the traditional approach of many capacitances in series and use grading resistor, simplified electric formation, reduced the busbar use amount, save cost about 25% than traditional scheme.
Description of drawings
Fig. 1 is the circuit topological structure figure of power cell.
Fig. 2 is stereogram of the present utility model.
Fig. 3 is the end view in boss of the present utility model-punching technology gained hole.
Embodiment
As described in Figure 2, a kind of high voltage transducer power unit of based thin film electric capacity, comprise, radiator 1, rectifier diode 2, rectification bus 3, input power terminal 4, housing 5,3 thin-film capacitors 6, bus 7, bus insulating plate 8, hospital bus bar 9, bypass controllable silicon 10, IGBT power model 11 and power output terminal 12, wherein, rectifier diode 2, bypass controllable silicon 10 and IGBT power model 11 all are installed on the radiator 1, the thin-film capacitor 6 that is positioned over radiator 1 left side carries out parallel connection by bus 7, bus 7 is stacked bus, bus insulating plate 8 is every between bus 7, play the effect of insulation, bus 7 opposite sides are connected in the input of IGBT power model 11, keep electrical connection by rectification bus 3 and rectifier diode 2 simultaneously, rectifier diode 2 is inputted as its power supply with input power terminal 4, to housing 5 outer outputs, hospital bus bar 9 is connected connection with power output terminal 12 to the output of IGBT power model 11 with the bypass controllable silicon by power output terminal 12.As shown in Figure 3, bus 7 adopts copper coin boss-punching moulding process punching, bus 7 adopts copper coin boss-punching moulding process, this technique at first forms boss at bus, punch at boss again, the boss height of this moulding is bus thickness and bus insulation plate thickness sum, such hole of getting so that the binding post of thin-film capacitor can directly be connected with stacked bus by bolt.
More than describing is to explanation of the present utility model, is not the restriction to utility model, and the utility model limited range is referring to claim, and in the situation of spirit of the present utility model, the utility model can be done any type of modification.
Claims (4)
1. the high voltage transducer power unit of a based thin film electric capacity, comprise, radiator (1), rectifier diode (2), rectification bus (3), input power terminal (4), housing (5), thin-film capacitor (6), bus (7), bus insulating plate (8), hospital bus bar (9), bypass controllable silicon (10), IGBT power model (11) and power output terminal (12), it is characterized in that, described rectifier diode (2), bypass controllable silicon (10) and IGBT power model (11) all are installed on the radiator (1), the thin-film capacitor (6) that is positioned over radiator (1) left side carries out parallel connection by bus (7), bus insulating plate (8) is every between bus (7), play the effect of insulation, bus (7) opposite side is connected in the input of IGBT power model (11), keep electrical connection by rectification bus (3) and rectifier diode (2) simultaneously, rectifier diode (2) is inputted as its power supply with input power terminal (4), the output of IGBT power model (11) is exported outside housing (5) by power output terminal (12), and hospital bus bar (9) is connected 10 with power output terminal (12) with the bypass controllable silicon) connect.
2. the high voltage transducer power unit of a kind of based thin film electric capacity as claimed in claim 1 is characterized in that, the number of described thin-film capacitor (6) is 3.
3. the high voltage transducer power unit of a kind of based thin film electric capacity as claimed in claim 2 is characterized in that, described bus (7) is stacked bus.
4. the high voltage transducer power unit of a kind of based thin film electric capacity as claimed in claim 3, it is characterized in that, described bus (7) adopts the punching of copper coin boss one punching moulding process, described hole so that the binding post of thin-film capacitor can directly be connected with bus (7) by bolt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220362863 CN202798478U (en) | 2012-07-25 | 2012-07-25 | High-voltage frequency-converter power unit based on film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220362863 CN202798478U (en) | 2012-07-25 | 2012-07-25 | High-voltage frequency-converter power unit based on film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202798478U true CN202798478U (en) | 2013-03-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220362863 Expired - Lifetime CN202798478U (en) | 2012-07-25 | 2012-07-25 | High-voltage frequency-converter power unit based on film capacitor |
Country Status (1)
| Country | Link |
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| CN (1) | CN202798478U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105490508A (en) * | 2016-01-15 | 2016-04-13 | 洛阳中重自动化工程有限责任公司 | High-voltage frequency converter power unit |
-
2012
- 2012-07-25 CN CN 201220362863 patent/CN202798478U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105490508A (en) * | 2016-01-15 | 2016-04-13 | 洛阳中重自动化工程有限责任公司 | High-voltage frequency converter power unit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130313 |