CN213596397U

CN213596397U - Chemical plating device for IC carrier plate

Info

Publication number: CN213596397U
Application number: CN202020995878.4U
Authority: CN
Inventors: 董光义; 王兴平; 田东培; 王爱臣; 王芳
Original assignee: Cookson Enthone Chemistry Shanghai Co Ltd
Current assignee: Alent Enthone Chemistry Shanghai Co Ltd
Priority date: 2020-06-03
Filing date: 2020-06-03
Publication date: 2021-07-02
Anticipated expiration: 2030-06-03

Abstract

The utility model provides a chemical plating device for IC support plate, the device includes the chemical plating groove, plating bath circulating device and plating bath jet subassembly, plating bath jet subassembly is placed in the inside of chemical plating groove, plating bath jet subassembly includes two jet flow boxes, every jet flow box has a side that is provided with a plurality of jet flow holes, treat that to plate the IC support plate hangs between two jet flow boxes have the side of a plurality of jet flow holes, plating bath circulating device includes the pump, the pipeline, provide "H" shape top open slot part of plating bath entry and the part that provides the plating bath export, "H" shape top open slot part is located the perpendicular below of treating to plate the IC support plate, and two vertical open slots are on a parallel with the plane at treating to plate support plate IC place basically. The device can form an effective vacuum siphon effect, promote the problem of uneven local deposition thickness caused by solution exchange in tiny holes of the IC carrier plate to be plated and concentration difference on the surface of a workpiece, ensure the stable deposition rate of chemical metal (such as copper) and improve the reliability of products.

Description

Chemical plating device for IC carrier plate

Technical Field

The utility model relates to a chemical plating device, more specifically say and relate to a chemical plating device for IC support plate, mainly is used for the test of laboratory scale IC support plate chemical plating.

Background

At present, the development of the electronic industry is very rapid, and the requirement of the industry on the complexity of electronic products is higher and higher. The development direction of electronic products is higher integration level, stronger function and lower energy consumption, and consumer electronic products also have the trend of small, light and thin. Taking a smart phone as an example, since more and more functions are added and larger screens are equipped, reducing power consumption becomes a key point, and reducing size and increasing integration level are effective ways to realize multifunction and low power consumption. Reducing the feature size of the PCB is a key technology, and more integration needs to be achieved in a fixed area. In the past, PCBs were used to implement the interconnection of chips and end products, but are now becoming integrated solutions. Slp (substrate Like pcb), a production technology of carrier boards, is one of the solutions to meet the large-scale demands today. Today's "circuit boards" have obscured the definition between PCB and IC carrier boards, SLP is therefore so named.

The main difference between the conventional PCB and IC carrier is line width and line spacing (L/S), and the similar carrier can shorten the line width/line spacing from 40/50 micrometers of HDI (high density interconnect circuit board) to 20/35 micrometers, i.e. the minimum line width/line spacing is shortened from 40 micrometers of HDI to 30 micrometers of SLP. The SLP board for the intelligent mobile phone has the advantages that the bearing quantity of electronic components in the same area can be more than twice of that of HDI. Class carrier boards are the trend for next generation PCB hardboards.

Due to the reduction of the line width/line distance, the used materials are thinner and the size of the via hole is smaller. The processing technology of the IC carrier plate is imperative. SAP (semi-additive) and mSAP (modified semi-additive) are commonly used processes in IC carrier production, which can fill the gap between IC and PCB manufacturing capabilities. Both the SAP and mSAP processes begin with a core dielectric and a thin copper layer during PCB production. One of the fundamental differences between these two process flows is the thickness of the seed copper layer. Typically, the SAP process starts with a thin chemical copper layer (less than 1.5mm), while the mSAP starts with a thin laminated copper foil (greater than 1.5 mm). Whichever process is chosen, a uniform layer of electroless copper is a fundamental guarantee for achieving subsequent finer line processing.

The chemical copper plating device used for the SAP or mSAP process of the IC carrier plate in the market is mostly produced in a large scale and is suitable for mass production. A general electroless copper plating apparatus includes a plurality of jet pipes, an electroless plating tank, and an electroless plating solution circulating apparatus. The plurality of independent jet flow pipes are used for circularly stirring the plating solution, and simultaneously, the high-speed jet flow mode also enhances the solution exchange of the plating solution on the surface and in the holes of the carrier plate, so that the uniformity of the plating layer is better. Each jet pipe is respectively connected with a pipeline of the chemical plating solution circulating device. One or more uniformly arranged round holes are arranged at the bottom of the chemical plating tank and are used as inlets of plating solution entering the pipeline of the circulating device. In practical applications, before a new product is used in the SAP process or the mSAP process, the effect of the process needs to be verified in the laboratory to determine whether the process can be stably used in subsequent mass production and achieve the expected effect. At present, no chemical plating device which is suitable for being used in a laboratory and used for verifying the effect of the SAP process or the mSAP process of the IC carrier plate exists, so that the laboratory-scale process verification cannot be completed.

Disclosure of Invention

The utility model aims at providing a plating bath circulating device for IC support plate chemical plating can realize the even chemical plating process test and the aassessment that is fit for the IC support plate in the laboratory. Such as precision chemical copper process testing of IC carriers.

In order to achieve the above purpose, the technical scheme of the utility model is as follows:

an electroless plating device for an IC carrier plate comprises an electroless plating tank, a plating solution circulating device and a plating solution jet assembly. The plating solution jet assembly is placed in the chemical plating tank and comprises two jet boxes, each jet box is provided with a side face provided with a plurality of jet holes, and the IC carrier plate to be plated is hung between the side faces of the two jet boxes with the plurality of jet holes. The plating solution circulating device comprises a pump, a pipeline, an H-shaped top open slot component and a plating solution outlet component, wherein the H-shaped top open slot component is used for providing a plating solution inlet, the H-shaped top open slot component is positioned vertically below an IC (integrated circuit) support plate to be plated, the H-shaped top open slot component comprises a left vertical top open slot, a right vertical top open slot and a transverse top open slot positioned between the left vertical top open slot and the right vertical top open slot, and the left vertical top open slot and the right vertical top open slot are parallel to a plane where the IC support plate to be plated is.

Preferably, the component for providing the plating solution outlet is connected with the jet flow box, and a filter screen is arranged inside the component for filtering impurities in the plating solution to prevent the impurities from entering the jet flow box to block the jet flow hole.

Preferably, the H-shaped open top groove part is fixedly arranged at the bottom of the chemical plating tank, so that plating solution in the chemical plating tank can only enter a pipeline of the circulating device through a plating solution inlet provided by the H-shaped open top groove part.

Preferably, the opening widths of the left vertical top opening groove and the right vertical top opening groove are larger than the opening width of the horizontal top opening groove.

Preferably, the opening width of the left vertical top open slot and the opening width of the right vertical top open slot are 3-5 mm, and the opening width of the horizontal top open slot is 2-4 mm.

Preferably, the left vertical top opening groove and the right vertical top opening groove are respectively positioned vertically below the side surfaces of the two jet boxes, which are provided with the plurality of jet holes.

Preferably, the opening of the "H" shaped open topped channel section is spaced from the bottoms of the two jet boxes.

Preferably, the distance between the opening of the H-shaped open top groove part and the bottoms of the two jet boxes is 4-6 mm.

Preferably, the plating solution circulating device further comprises a pressure gauge and a flow meter.

Preferably, the plating solution circulating device further comprises a pressure regulating valve and a flow regulating valve.

The utility model discloses a chemical plating device is including the plating bath circulating device who has "H" shape top open slot part and the plating bath jet assembly who has two jet boxes, "H" shape top open slot part provides the entry that the plating bath got into circulating device's pipeline, when the suction plating bath, this kind of "H" shape entry can form the negative pressure near the bottom of two jet box looks of plating bath jet assembly, cooperate two jet boxes in the negative pressure that the plating bath accessory formed of injection plating bath in-process, form effectual vacuum siphon effect, promote the local deposit thickness problem that the small downthehole solution exchange of waiting to plate IC support plate and the concentration difference on workpiece surface lead to, ensured chemical metal (for example, copper) deposition rate is stable, improve the reliability of product.

The utility model discloses this kind of a chemical plating device for IC support plate that provides for the first time can realize the even chemical plating of IC support plate in the laboratory for the laboratory research of SAP or the mSAP technology of IC support plate provides reliable technological parameter and data for follow-up volume production.

Drawings

In order to illustrate the embodiments of the invention more clearly, reference will now be made briefly to the attached drawings of embodiments, it being understood that the drawings described below are only examples of some embodiments of the invention, and that other drawings may be derived from these drawings by a person skilled in the art without the inventive step in the forerunner.

Fig. 1 schematically shows the structure of an electroless plating apparatus for an IC carrier according to an embodiment of the present invention.

FIG. 2 schematically shows the structure of a plating solution circulating apparatus of the electroless plating apparatus of FIG. 1.

Fig. 3 schematically shows a three-dimensional structure of an "H" -shaped open-topped trough part of the plating solution circulating apparatus.

FIG. 4 is a plan view of an "H" -shaped open-topped trough member of the plating solution circulating apparatus of the electroless plating apparatus of FIG. 1.

FIG. 5 schematically illustrates the operation of the "H" shape open topped trough section in cooperation with a plating bath jet assembly.

Detailed Description

The utility model discloses an in the description, chemical plating bath is used for holding the plating solution and have sufficient space to make plating solution jet assembly place wherein, jet assembly can spray the plating solution and form strong stirring again simultaneously thereby ensured going on of chemical plating evenly, continuously and stably. The plating tank may be made of any material suitable for containing a plating solution, such as a PVC material. The electroless plating bath may be of any shape suitable for housing a plating bath jet assembly. For example, rectangular parallelepiped, square, cylindrical, etc.

In the context of the present invention, the jet box of the plating bath jet assembly may be made of any material suitable for containing the plating bath, such as a PVC material. When the rear surface of the jet flow cartridge is provided with the transparent window, the transparent window may be made of a transparent acrylic plate, and when the entire rear surface of the jet flow cartridge is a transparent material, the entire rear surface may be made of a transparent acrylic plate.

In the description of the present invention, the material of the part providing the plating solution inlet may be the same as that of the electroless plating tank, for example, PVC material.

In order to make the technical means, creation features, achievement purposes and effects of the present invention easy to understand and understand, the present invention is further explained below with reference to the accompanying drawings.

As shown in FIG. 1, an electroless plating apparatus 1 for IC carrier plates of the present invention comprises an electroless plating tank 10, a plating solution circulation device 11 and a plating solution jet assembly 12. In the example shown in the figure, the electroless plating bath 10 is a cylindrical shape with an open upper end, and the plating bath spout assembly 12 is placed inside but does not contact the bottom surface of the cylindrical electroless plating bath 10. The plating solution circulating means 11 for drawing the plating solution from the bottom of the chemical plating tank 10 into each of the flow cells of the plating solution flow jet assembly 12 includes a circulating pump 111, a pipe 112, an "H" -shaped open-topped trough part 113 providing an inlet for the plating solution, a part providing an outlet for the plating solution, and a control valve 115 (see fig. 2).

The plating solution jet assembly 12 comprises a jet box 12A and a jet box 12B, and the IC carrier plate 100 to be plated is suspended between the jet box 12A and the jet box 12B. In the example shown in the figure, the jet flow box 12A and the jet flow box 12B are rectangular parallelepiped shapes, matching the shape of the IC carrier board 100 to be plated, and the front surfaces of the jet flow box 12A and the jet flow box 12B are respectively provided with a plurality of jet holes for jetting the plating solution to the IC carrier board 100 to be plated. Of course, the jet flow cartridge 12A and the jet flow cartridge 12B may have other shapes, and it is possible to use the shape of the side surface provided with the plurality of jet holes and the shape of the IC carrier 100 to be matched so as to uniformly spray the plating solution.

The "H" shaped open-topped trough member 113 is fixedly mounted (e.g., mounted) on the bottom of the electroless plating bath 10, providing an "H" shaped bath inlet, so that the bath in the electroless plating bath can only enter the pipe 112 of the circulation device 11 through the "H" shaped inlet. Referring to fig. 3, the "H" shaped top open groove component 113 that provides the plating solution inlet includes a left vertical top open groove 1131, a middle transverse top open groove 1132 and a right vertical top open groove 1133, the middle transverse top open groove 1132 located between the left vertical top open groove 1131 and the right vertical top open groove 1133. The bottom of the middle transverse top open slot 1132 has a port 1134 that connects to the pipe 112 so that plating solution flowing into the left vertical top open slot 1131, the middle transverse top open slot 1132 and the right vertical top open slot 1133 eventually enters the pipe 112 through the port 1134.

The "H" -shaped open-top slot component 113 is located vertically below the IC carrier board 110 to be plated, and when viewed vertically downward from above in fig. 1, the left vertical open-top slot 1131 and the right vertical open-top slot 1133 substantially overlap the front faces of the

jet flow boxes

12A and 12B, respectively, where the jet flow boxes are provided with a plurality of jet holes. That is, the distance between the left vertical top open slot 1131 and the right vertical top open slot 1133 is substantially equal to the distance between the jet box 12A and the front face of the jet box 12B. The opening of the "H" -shaped open-topped trough part 113 is spaced from the bottoms of the two

jet boxes

12A and 12B by a distance, for example, 4 to 6 mm. In order to ensure that the surface of the IC carrier board 100 to be plated between the jet box 12A and the jet box 12B is uniformly sprayed with the plating solution, the spraying surface area of the IC carrier board 100 is smaller than the front surfaces of the jet box 12A and the jet box 12B having the spraying holes, so that the distance from the bottom of the IC carrier board 100 to the opening of the "H" -shaped open-top groove part 113 is generally greater than the distance from the opening of the "H" -shaped open-top groove part 113 to the bottoms of the two

jet boxes

12A and 12B.

As shown in FIG. 4, the left and right vertical top

open slots

1131, 1133 of the "H" -shaped top open slot component 113 have an opening width that is greater than the opening width of the middle transverse top open slot 1132. For example, the opening widths of the left vertical top open slot 1131 and the right vertical top open slot 1133 are both 4mm, and the opening width of the middle horizontal top open slot 1132 is 3 mm.

The means for providing a plating solution outlet includes means for providing a plating solution outlet 114A and means for providing a plating solution outlet 114B. In the example shown in fig. 1, the

components

114A and 114B are cylindrical in shape and are attached to the upper portions of the

jet box

12A and 12B, respectively. The

parts

114A and 114B for providing outlets for the plating solution are provided with filter screens inside thereof for filtering impurities in the plating solution to prevent the impurities from entering the jet flow cartridge 12A and the jet flow cartridge 12B to block the jet flow holes.

The bath circulation device 11 may also include other components for further precisely controlling the circulation flow rate, such as a pressure gauge, a flow meter, a pressure regulating valve, and the like.

The utility model discloses a working method of system as follows:

when the electroplating device is used, the power supply is turned on, the plating solution circulating device 11 starts to work, the circulating pump 111 makes the plating solution in the chemical plating tank 10 sequentially pass through the H-shaped open-top groove part 113, the pipeline 112, the

parts

114A and 114B (filtered by the filter screens in the

parts

114A and 114B) and enter the jet flow box 12A and the jet flow box 12B, and then the jet flow box 12A and the jet flow box 12B spray the plating solution to the surface of the IC carrier plate to be plated hung between the parts through the jet flow holes. When the chemical plating device works, the plating solution circulating device 11 pumps the plating solution through the H-shaped plating solution inlet provided by the H-shaped open top groove part 113, and because the H-shaped plating solution inlet is positioned right below the front surfaces of the jet flow box 12A and the jet flow box 12B, negative pressure is formed below the jet flow box 12A and the jet flow box 12B in the plating solution pumping process, and the negative pressure is matched with the negative pressure formed by the two jet flow boxes around the plating solution flow in the plating solution spraying process, a vacuum siphon effect can be effectively formed (the specific principle is shown in figure 5), the problem of uneven local deposition thickness caused by solution exchange in a tiny hole of the IC carrier plate to be plated and concentration difference on the surface of a workpiece is promoted, the stable deposition rate of chemical metal (such as copper) is ensured, and the reliability of the product is improved.

Through the above description, it can be seen that compared with the existing chemical plating device for IC carrier plate, the circulation device for chemical plating device for IC carrier plate of the present invention and the plating solution jet assembly including two jet boxes are used in combination to form a vacuum siphon effect, thereby promoting the solution exchange in the tiny holes of the IC carrier plate to be plated and the uneven local deposition thickness caused by the concentration difference on the surface of the workpiece, ensuring the stable deposition rate of chemical metal (e.g. copper) and improving the reliability of the product. The uniform chemical plating of the IC carrier plate can be realized in a laboratory, and the method is used for laboratory research of SAP or mSAP process of the IC carrier plate and provides reliable process parameters and data for subsequent mass production.

The basic principles and the main features of the invention and the advantages of the invention have been shown and described above. It will be understood by those skilled in the art that the present invention is not limited to the above embodiments, and that the foregoing embodiments and descriptions are provided only to illustrate the principles of the present invention without departing from the spirit and scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims

1. The utility model provides a chemical plating device for IC support plate, the chemical plating device includes chemical plating bath, plating solution circulating device and plating solution jet subassembly, plating solution jet subassembly is placed the inside of chemical plating bath, a serial communication port, plating solution jet subassembly includes two jet boxes, and every jet box has a side that is provided with a plurality of jet holes, and the IC support plate that waits to plate hangs between two jet boxes have the side of a plurality of jet holes, plating solution circulating device includes pump, pipeline, provides "H" shape top open slot part of plating bath entry and the part that provides the plating solution export, "H" shape top open slot part is located the perpendicular below of waiting to plate the IC support plate, and "H" shape top open slot part includes vertical top open slot in left side, the vertical top open slot in right side and is located the horizontal top open slot between them, the vertical top open slot in left side with the vertical top open slot in right side is on a parallel with the IC support plate that waits to plate is located And (4) a plane.

2. The electroless plating apparatus for an IC carrier according to claim 1, wherein the component providing the plating solution outlet is connected to the jet flow box, and a filter screen is disposed inside the component for filtering impurities in the plating solution to prevent the impurities from entering the jet flow box and blocking the jet flow hole.

3. The electroless plating apparatus for an IC carrier according to claim 1 or 2, wherein the "H" shaped open top slot assembly is fixedly installed at the bottom of the electroless plating tank, so that the plating solution in the electroless plating tank can only enter the pipeline of the circulation device through the plating solution inlet provided by the "H" shaped open top slot assembly.

4. The electroless plating apparatus for IC carrier plates according to claim 1 or 2, wherein the opening widths of the left vertical top open slot and the right vertical top open slot are greater than the opening width of the horizontal top open slot.

5. The electroless plating device for the IC carrier plate according to claim 4, wherein the opening widths of the left vertical top open slot and the right vertical top open slot are 3-5 mm, and the opening width of the horizontal top open slot is 2-4 mm.

6. The electroless plating apparatus for IC carrier plates according to claim 1 or 2, wherein the left vertical top opening groove and the right vertical top opening groove are respectively located vertically below the side surfaces of the two jet boxes where the plurality of jet holes are provided.

7. The electroless plating apparatus for IC carrier plates according to claim 1 or 2, wherein the openings of the H-shaped open top slot part are spaced from the bottoms of the two jet boxes.

8. The electroless plating apparatus for IC carrier plate according to claim 7, wherein the distance between the opening of the H-shaped open top slot part and the bottom of the two jet boxes is 4-6 mm.

9. The electroless plating apparatus for the IC carrier according to claim 1 or 2, wherein the plating solution circulating device further comprises a pressure gauge and a flow meter.

10. The electroless plating apparatus for an IC carrier according to claim 9, wherein the plating solution circulating apparatus further comprises a pressure regulating valve and a flow regulating valve.