CN213439058U

CN213439058U - Plane grinding device for semiconductor material

Info

Publication number: CN213439058U
Application number: CN202021836964.7U
Authority: CN
Inventors: 谢华伟
Original assignee: Suzhou Rhenium Platinum Electromechanical Technology Co ltd
Current assignee: Suzhou Rhenium Platinum Electromechanical Technology Co ltd
Priority date: 2020-08-28
Filing date: 2020-08-28
Publication date: 2021-06-15
Anticipated expiration: 2030-08-28

Abstract

The utility model discloses a semiconductor material's plane grinder, including abrasive disc, semiconductor material anchor clamps and spacing swing arm, the abrasive disc is by drive arrangement drive rotation, the top surface of abrasive disc is equipped with diamond grinding layer, diamond grinding layer surface is equipped with a plurality of radial guide slots, the lower part of semiconductor material anchor clamps is the cylinder form, semiconductor material anchor clamps eccentric arrange in on the diamond grinding layer, spacing swing arm includes half month yoke, the both ends of half month yoke are equipped with the anchor clamps gyro wheel respectively, the axis perpendicular to of anchor clamps gyro wheel the forked type plane of half month yoke, the outer disc of lower part of semiconductor material anchor clamps with the contact of anchor clamps gyro wheel. The utility model discloses can improve and grind the speed of getting rid of, do not need the abrasive material moreover, reduce greatly and grind time, raise the efficiency.

Description

Plane grinding device for semiconductor material

Technical Field

The utility model relates to a grinder especially relates to a semiconductor material's plane grinder.

Background

During the processing of semiconductor wafers or materials, thinning and polishing processes are required to the wafers or materials. Thinning is to subtract the thickness of the wafer to remove a certain thickness of material, so as to thin the wafer or the material, thereby facilitating heat dissipation or subsequent processing (such as polishing, scribing, epitaxy, packaging, etc.). The polishing process is to treat the surface damage layer generated by grinding, improve the surface smoothness, and achieve the surface quality (roughness, cleanliness, damage layer thickness) meeting the requirements and the like. The existing semiconductor thinning processing technology mainly adopts vertical feeding grinding type thinning and horizontal grinding type thinning by adopting grinding materials.

The grinding type thinning of vertical feeding uses a grinding tool to vertically move up and down along a main shaft and rotate, the processed wafer/device/material is fixed on a lower horizontal sucker, and the sucker rotates at a certain speed, so that the feeding effect of the grinding tool is utilized to grind the wafer/material/device convex part.

The horizontal grinding type thinning of the grinding material is adopted, a clamp which passively follows a grinding disc to rotate is used for absorbing a processed wafer/device/material and other samples, and then the processed wafer/device/material and other samples are placed on the rotatable grinding disc in an inverted mode, the grinding material is dripped onto the grinding disc through a material liquid system, and therefore the contact surface of the wafer/material/device is removed in a grinding mode through the grinding material and the grinding disc.

The grinding type thinning process grinding tool with vertical feeding has high rotating speed and high removal rate, but the machine is expensive, accessories and later maintenance are expensive, the machine operation needs strict training to be operated, and visible marks exist on the surface after grinding. And the horizontal grinding type thinning needs additional grinding materials to be matched for use, the cast iron and the glass grinding disc are easy to wear, and the grinding efficiency is low.

SUMMERY OF THE UTILITY MODEL

To the above-mentioned prior art defect, the utility model aims to provide a semiconductor material's plane grinder improves the grinding efficiency that the level ground, increases output.

The utility model discloses technical scheme as follows: the plane grinding device for the semiconductor material comprises a grinding disc, a semiconductor material clamp and a limiting swing arm, wherein the grinding disc is driven to rotate by a driving device, a diamond grinding layer is arranged on the top surface of the grinding disc, a plurality of radial guide grooves are formed in the surface of the diamond grinding layer, the lower portion of the semiconductor material clamp is cylindrical, the semiconductor material clamp is eccentrically arranged on the diamond grinding layer, the limiting swing arm comprises a half-moon-shaped fork arm, clamp rollers are arranged at two ends of the half-moon-shaped fork arm respectively, the axis of each clamp roller is perpendicular to a forked plane of the half-moon-shaped fork arm, and the outer circular surface of the lower portion of the semiconductor material clamp is in contact with the clamp rollers.

Further, the grinding disc is provided with a central through hole, and the radial guide grooves extend from the central through hole to the outer peripheral edge of the diamond grinding layer to divide the diamond grinding layer into a plurality of sector blocks.

Furthermore, one end of the half-moon fork arm is provided with a power source for driving the clamp roller to rotate.

Further, the power source is a motor, the motor is connected with a driving roller, and the driving roller drives the clamp roller through a cord O-shaped ring.

Furthermore, the outer circular surface of the clamp roller is provided with a polyurethane friction contact layer.

Compared with the prior art, the utility model the advantage lie in: the grinding disc with the diamond grinding layer is matched with the guide grooves which are radially arranged, grinding can be completed only by using water as a medium, and materials which are ground and removed can be taken away quickly. Compared with the existing horizontal grinding process data, the grinding removal rate of the same material can be at least doubled, and an abrasive is not needed. The grinding time can be greatly shortened, and the efficiency is improved. And the parameters of the surface quality, the flatness and the like of the ground sample can meet the requirements of related indexes. The spacing swing arm of the specific initiative drive anchor clamps gyro wheel is adopted, can guarantee that the wafer rotates steadily to improve the roughness of wafer abrasive polishing, and can accelerate anchor clamps rotation through swing arm control, increase the friction speed of wafer and diamond abrasive layer, further improve the efficiency of grinding.

Drawings

FIG. 1 is a schematic perspective view of a flat polishing apparatus for semiconductor materials.

FIG. 2 is a schematic view of a polishing disk.

Fig. 3 is a schematic diagram of a limiting swing arm structure.

Detailed Description

The present invention will be further described with reference to the following examples, which should not be construed as limiting the invention.

In order to better understand the present invention, please refer to fig. 1 and 2, the plane grinding device for semiconductor material according to the present embodiment includes a grinding disc 1, a semiconductor material clamp 2 and a limit swing arm 3, the grinding disc 1 is driven by a grinding motor 4 to rotate horizontally, the top surface of the grinding disc 1 is provided with a diamond grinding layer 11, the surface of the diamond grinding layer 11 is provided with a plurality of radial guide grooves 12, the radial guide grooves 12 are equally distributed according to the circumference, the grinding disc 1 is provided with a central through hole 13, and the radial guide grooves 12 are formed by dividing the diamond grinding layer 11 into a plurality of equal sector blocks by extending the central through hole 13 to the periphery edge of the diamond grinding layer 11. The function of the channel 12 is to keep a certain amount of water during grinding to lubricate between the grinding disc 1 and the material to be ground, improving the surface quality, and on the other hand to discharge the waste material produced by grinding through the channel 12. The semiconductor material clamp 2 is placed on the diamond grinding layer 11 at an eccentric position, the semiconductor material clamp 2 is completely placed on one side of the midpoint of the grinding disc 1, the lower part of the semiconductor material clamp 2 is a cylinder, and a suction disc for absorbing the material to be ground is arranged on the bottom surface of the cylinder. The position of the semiconductor material clamp 2 on the surface of the grinding disc 1 is determined by the limiting swing arm 3, the limiting swing arm 3 comprises a semicircular half-moon-shaped fork arm 31, clamp rollers 32 are respectively installed at two ends of the half-moon-shaped fork arm 31, the clamp rollers 32 can freely rotate, and rotating shafts of the two clamp rollers 32 are parallel to each other and are perpendicular to a fork-shaped plane of the half-moon-shaped fork arm 31. One end of the half-moon yoke 31 is provided with a speed-adjustable brushless DC motor 33 as a power source, a rotating shaft of the brushless DC motor 33 is connected with a driving roller 34, and a rotating shaft of the driving roller 4 is also a fork-shaped plane vertical to the half-moon yoke 31. The driving roller 34 and the clamp roller 32 are connected by a string O-ring 35, and a polyurethane frictional contact layer 32a is provided on an outer circumferential surface of the clamp roller 32 in order to increase friction between the clamp roller 32 and the semiconductor material clamp 2.

GaAs was processed using the plane polishing apparatus for semiconductor material of this example. Experiment 1 set the rotation speed of the grinding disc to 25 rpm, the down pressure to 1.2KG, no abrasive, only water. The processing time was 13 minutes and the average removal was 238.4 microns. The removal rate was 18.3 microns/min. The surface TTV (total thickness variation) after machining was 2 μm. Experiment 2 set diamond millstone rotating speed 35 revolutions per minute, lower pressure 1.5KG, no abrasive, only water. The processing time was 7.5 minutes and the average removal was 216.4 microns. The removal rate was 28.9 microns/min. The surface TTV (total thickness variation) after machining was 2 μm.

And the glass disc in the prior art is used as a grinding disc to carry out comparative experiment, the rotating speed of the glass grinding disc is set to be 40 r/min, the lower pressure is set to be 1.5KG, and 9 micron alumina powder is used as the grinding material. The processing time was 26 minutes and the average removal was 234.8 microns. The removal rate was 9 μm/min. The surface TTV (total thickness variation) after machining was 2 μm.

It is found with the comparison example experiment contrast, adopt the utility model discloses the grinding experiment that the device goes on is close and the same pressure at the rotational speed, and the rate is got rid of to the triple that can obtain the comparison example experiment and process time reduces two thirds. The machining rate is greatly improved, and the surface TTV effect is the same.

Claims

1. The plane grinding device for the semiconductor material comprises a grinding disc, a semiconductor material clamp and a limiting swing arm, wherein the grinding disc is driven to rotate by a driving device.

2. The apparatus of claim 1, wherein the polishing disk is provided with a central through hole, and the radial guide grooves extend from the central through hole to the outer peripheral edge of the diamond polishing layer to divide the diamond polishing layer into sectors.

3. The apparatus of claim 1, wherein the half-moon-shaped fork arm is provided at one end thereof with a power source for rotating the chuck roller.

4. The apparatus as claimed in claim 3, wherein the power source is a motor, and the motor is connected to a driving roller, and the driving roller drives the clamp roller through a wire O-ring.

5. The apparatus of claim 1, wherein the outer circumferential surface of the chuck roller is provided with a polyurethane frictional contact layer.