CN213184963U

CN213184963U - High-power semiconductor laser

Info

Publication number: CN213184963U
Application number: CN202022579527.8U
Authority: CN
Inventors: 周虎
Original assignee: Wuhan Xinguangxun Photoelectric Technology Co ltd
Current assignee: Wuhan Xinguangxun Photoelectric Technology Co ltd
Priority date: 2020-11-10
Filing date: 2020-11-10
Publication date: 2021-05-11
Anticipated expiration: 2030-11-10

Abstract

The utility model relates to a semiconductor laser technical field just discloses a semiconductor laser of high power, which comprises a housin, the inside fixed mounting of casing has one end to extend to the left laser body of casing, the left side threaded connection of casing has the lens cone that is located the laser body outside, the top and the equal fixedly connected with semiconductor refrigeration piece in bottom of laser body, two the equal fixedly connected with water cover in the back of the body one side of the back of the body of semiconductor refrigeration piece, two the equal fixedly connected with quantity in back of the body one side of the back of the body of semiconductor refrigeration piece is a plurality of and one end extends to the inside conducting strip of water cover, two the drain pipe in the water cover outside is extended to the equal fixedly connected with one end in inside of water cover, the inside fixed mounting of casing has the water pump that is located laser body bottom. The high-power semiconductor laser solves the problem that the existing high-power semiconductor laser is difficult to work stably for a long time due to the common heat dissipation effect.

Description

High-power semiconductor laser

Technical Field

The utility model relates to a semiconductor laser technical field specifically is a semiconductor laser of high power.

Background

The semiconductor laser is a laser using semiconductor material as working substance, the common working substance is gallium arsenide, cadmium sulfide, indium phosphide and the like, the excitation mode is three modes of electric injection, electron beam excitation and optical pumping, and the semiconductor laser is widely applied to the aspects of laser communication, optical storage, optical gyroscope, laser printing, beauty, distance measurement, radar, medical treatment and the like.

The prior high-power semiconductor laser has a plurality of types, wherein the high-power semiconductor laser is widely applied, but the prior high-power semiconductor laser has a common heat dissipation effect, so that the prior high-power semiconductor laser is difficult to work stably for a long time, and the prior high-power semiconductor laser is provided to solve the problem.

SUMMERY OF THE UTILITY MODEL

Technical problem to be solved

Not enough to prior art, the utility model provides a semiconductor laser of high power possesses the good advantage of radiating effect, and the radiating effect of having solved current high power semiconductor laser is general, leads to its problem that is difficult to long-time stable work.

(II) technical scheme

For the purpose that realizes above-mentioned radiating effect is good, the utility model provides a following technical scheme: a high-power semiconductor laser comprises a shell, wherein a laser body with one end extending to the left side of the shell is fixedly arranged in the shell, the left side of the shell is in threaded connection with a lens cone positioned outside the laser body, semiconductor refrigeration sheets are fixedly connected to the top and the bottom of the laser body, water covers are fixedly connected to the opposite sides of the two semiconductor refrigeration sheets, a plurality of heat conduction sheets are fixedly connected to the opposite sides of the two semiconductor refrigeration sheets, one end of each heat conduction sheet extends to the inside of the water cover, liquid outlet pipes with one ends extending to the outside of the water covers are fixedly connected to the inside of the two water covers, a water pump positioned at the bottom of the laser body is fixedly arranged in the shell, one ends of the two liquid outlet pipes, far away from the water covers, are communicated with the input end of the water pump, and the output end of the water pump is communicated with a connecting pipe with one, the inside fixedly connected with quantity of casing is two and is located the cooling tube on laser body right side and two cooling tubes all with the connecting pipe one end intercommunication of keeping away from the water pump, two the one end that the connecting pipe was kept away from to the cooling tube all communicates the liquid return pipe that has and two water cover intercommunications, the inside fixed mounting of casing has the motor that is located laser body and the relative one side of cooling tube, the output fixedly connected with fan of motor, the right side of casing is inlayed and is equipped with the dust cover, the front and the back of casing all inlay and be equipped with the air inlet cover.

Preferably, the heat conducting fins are T-shaped, the heat conducting fins are copper sheets, and the number of the heat conducting fins is not less than ten.

Preferably, the cold end of the semiconductor refrigeration piece is in contact with the outer side of the laser body, and the area of the bottom of the semiconductor refrigeration piece is not smaller than half of the area of the top of the laser body.

Preferably, the radiating pipe is U-shaped, and the radiating pipe is a copper pipe.

Preferably, the outer side of the motor is fixedly connected with a support, one end of the support is fixedly connected with the inner side wall of the shell, and the motor is fixedly arranged in the shell through the support.

Preferably, the inside of water cover, drain pipe, connecting pipe, cooling tube and liquid return pipe all is filled with deionized water, dust cover and air inlet cover all are netted.

(III) advantageous effects

Compared with the prior art, the utility model provides a semiconductor laser of high power possesses following beneficial effect:

the high-power semiconductor laser device is characterized in that the radiating pipe is arranged, when the semiconductor laser device works, heat generated by the laser device body is conveyed to one side of the laser device body away from the laser device body by the semiconductor refrigeration sheet, then the heat is transmitted to deionized water in the water cover through the plurality of heat-conducting sheets, the deionized water flows in the water cover, the drain pipe, the water pump, the connecting pipe, the radiating pipe and the liquid return pipe under the action of the water pump, absorbs the heat transmitted by the heat-conducting sheets and brings the heat to the radiating pipe when the deionized water flows through the U-shaped copper radiating pipe, the heat is transmitted out of the radiating pipe and is quickly dissipated to the air under the action of air flow formed by the rotation of the fan and is taken out of the shell by the air flow, the cooled deionized water flowing out of the radiating pipe flows into the water cover again through the liquid return pipe, and flows in a circulating mode, and the heat generated by, thereby achieving the purpose of good heat dissipation effect.

Drawings

FIG. 1 is a schematic structural view of the present invention;

fig. 2 is a front view of the present invention;

fig. 3 is an enlarged view of a portion a in fig. 1 according to the present invention.

In the figure: 1. a housing; 2. a laser body; 3. a lens barrel; 4. a semiconductor refrigeration sheet; 5. a water shield; 6. a heat conductive sheet; 7. a liquid outlet pipe; 8. a water pump; 9. a connecting pipe; 10. a radiating pipe; 11. a liquid return pipe; 12. a motor; 13. a fan; 14. a dust cover; 15. and an air inlet cover.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-3, a high power semiconductor laser includes a housing 1, a laser body 2 having one end extending to the left side of the housing 1 is fixedly installed inside the housing 1, a lens barrel 3 located outside the laser body 2 is connected to the left side of the housing 1 through a screw thread, semiconductor cooling fins 4 are fixedly connected to the top and the bottom of the laser body 2, the cold ends of the semiconductor cooling fins 4 contact with the outside of the laser body 2, the area of the bottom of the semiconductor cooling fins 4 is not less than half of the area of the top of the laser body 2, water covers 5 are fixedly connected to the opposite sides of the two semiconductor cooling fins 4, a plurality of heat conduction fins 6 are fixedly connected to the opposite sides of the two semiconductor cooling fins 4, one end of each heat conduction fin 6 extends to the inside of the water cover 5, the heat conduction fins 6 are T-shaped, the heat conduction fins 6 are copper sheets, and the number of the heat conduction fins, liquid outlet pipes 7 with one ends extending to the outer sides of the water covers 5 are fixedly connected inside the two water covers 5, a water pump 8 positioned at the bottom of the laser body 2 is fixedly installed inside the shell 1, the type of the water pump 8 can be DSL2-12-374, the ends, far away from the water covers 5, of the two liquid outlet pipes 7 are both communicated with the input end of the water pump 8, the output end of the water pump 8 is communicated with a connecting pipe 9 with one end extending to the right side of the laser body 2, two radiating pipes 10 which are positioned at the right side of the laser body 2 are fixedly connected inside the shell 1, the radiating pipes 10 are U-shaped, the radiating pipes 10 are copper pipes, the two radiating pipes 10 are both communicated with one ends, far away from the water pump 8, of the connecting pipe 9, liquid return pipes 11 communicated with the two water covers 5 are both communicated with one ends, far away from the connecting pipe 9, a motor 12 positioned at one, the model of the motor 12 can be RS-385SA-2073, the outside fixedly connected with one end of the motor 12 and the support of the inside wall fixed connection of the casing 1, the motor 12 is fixedly installed in the casing 1 through the support, the output end fixedly connected with fan 13 of the motor 12, the dust cover 14 is embedded on the right side of the casing 1, the air inlet cover 15 is embedded on the front and the back of the casing 1, the water cover 5, the liquid outlet pipe 7, the connecting pipe 9, the radiating pipe 10 and the liquid return pipe 11 are filled with deionized water, and the dust cover 14 and the air inlet cover 15 are both net-shaped.

In summary, in the high power semiconductor laser, by providing the heat dissipation tube 10, when the semiconductor laser is operated, the heat generated by the laser body 2 is transferred to the side away from the laser body 2 by the semiconductor cooling plate 4, and then transferred to the deionized water inside the water cover 5 by the plurality of heat conduction plates 6, the deionized water circulates inside the water cover 5, the liquid outlet pipe 7, the water pump 8, the connection pipe 9, the heat dissipation tube 10 and the liquid return pipe 11 under the action of the water pump 8, absorbs the heat transferred by the heat conduction plates 6 when passing through the water cover 5, and carries the heat to the heat dissipation tube 10, when passing through the inside of the U-shaped copper heat dissipation tube 10, the heat permeates out of the heat dissipation tube 10 and is rapidly dissipated to the air under the action of the air flow formed by the rotation of the fan 13, and is carried out of the housing 1 by the air flow, the cooled deionized water flowing out of the heat dissipation tube 10 flows into the inside of the water cover, the heat generated by the laser body 2 can be continuously discharged due to the circular flow, so that the purpose of good heat dissipation effect is achieved, and the problem that the conventional high-power semiconductor laser is difficult to work stably for a long time due to the common heat dissipation effect is solved.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A high power semiconductor laser comprising a housing (1), characterized in that: the laser device comprises a shell (1), wherein a laser device body (2) with one end extending to the left side of the shell (1) is fixedly installed in the shell (1), a lens cone (3) positioned on the outer side of the laser device body (2) is in threaded connection with the left side of the shell (1), semiconductor refrigerating sheets (4) are fixedly connected to the top and the bottom of the laser device body (2), water covers (5) are fixedly connected to the back sides of the two semiconductor refrigerating sheets (4), a plurality of heat conducting sheets (6) are fixedly connected to the back sides of the two semiconductor refrigerating sheets (4), one end of each heat conducting sheet extends to the inside of each water cover (5), liquid outlet pipes (7) with one ends extending to the outer sides of the water covers (5) are fixedly connected to the inside of the two water covers (5), a water pump (8) positioned at the bottom of the laser device body (2) is fixedly installed in the shell (1), and the ends, far away from the water covers (5), of the two liquid outlet pipes (7, the output end of the water pump (8) is communicated with a connecting pipe (9) one end of which extends to the right side of the laser body (2), the interior of the shell (1) is fixedly connected with two radiating pipes (10) which are arranged on the right side of the laser body (2) in quantity, the two radiating pipes (10) are communicated with one end of the connecting pipe (9) far away from the water pump (8), one ends of the two radiating pipes (10) far away from the connecting pipe (9) are communicated with liquid return pipes (11) communicated with the two water covers (5), a motor (12) which is positioned at one side of the laser body (2) opposite to the radiating pipe (10) is fixedly arranged in the shell (1), the output end of the motor (12) is fixedly connected with a fan (13), the right side of the shell (1) is embedded with a dust cover (14), the front and the back of the shell (1) are both embedded with air inlet covers (15).

2. A high power semiconductor laser as claimed in claim 1 wherein: the heat conducting fins (6) are T-shaped, the heat conducting fins (6) are copper sheets, and the number of the heat conducting fins (6) is not less than ten.

3. A high power semiconductor laser as claimed in claim 1 wherein: the cold end of semiconductor refrigeration piece (4) contacts with the outside of laser body (2), the area of semiconductor refrigeration piece (4) bottom is not less than the half of laser body (2) top area.

4. A high power semiconductor laser as claimed in claim 1 wherein: the radiating pipe (10) is U-shaped, and the radiating pipe (10) is a copper pipe.

5. A high power semiconductor laser as claimed in claim 1 wherein: the outer side of the motor (12) is fixedly connected with a support with one end fixedly connected with the inner side wall of the shell (1), and the motor (12) is fixedly installed inside the shell (1) through the support.

6. A high power semiconductor laser as claimed in claim 1 wherein: the inside of water cover (5), drain pipe (7), connecting pipe (9), cooling tube (10) and liquid return pipe (11) all is filled with deionized water, dust cover (14) and air inlet cover (15) all are netted.