CN213071101U - Diode structure - Google Patents
Diode structure Download PDFInfo
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- CN213071101U CN213071101U CN202021672417.XU CN202021672417U CN213071101U CN 213071101 U CN213071101 U CN 213071101U CN 202021672417 U CN202021672417 U CN 202021672417U CN 213071101 U CN213071101 U CN 213071101U
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Abstract
The utility model discloses a diode structure, which comprises a shell, a first electrode and a second electrode, wherein the first electrode and the second electrode are fixedly arranged in a diode through two ends of the shell, the shell is provided with a radiating groove, the radiating groove is in the shape of a semi-circular arc and is uniformly arranged on the surface of the diode shell, the surface area of the diode shell contacting with the outside is conveniently increased, and the radiating performance of the diode is greatly improved; the utility model discloses in because the radiating groove that sets up on the diode shell is showing the surface area that has increased diode shell and external contact, compare then obviously improved the heat dispersion of diode with ordinary diode, can distribute away the heat of diode core more fast, have the function that obviously reduces diode core temperature, and the temperature that reduces the diode just can effectively protect the diode can not arouse overheated because of the electric breakdown, effectively avoided leading to diode one-way conductivity to be destroyed by the permanence because of overheated.
Description
Technical Field
The utility model relates to a diode specifically is a diode structure.
Background
Diodes are also known as crystal diodes, abbreviated as diodes (diodes), and in addition, early vacuum electronic diodes; it is an electronic device with unidirectional conduction of current. The electronic device has a PN junction and two lead terminals inside a semiconductor diode, and has a unidirectional current conduction characteristic in accordance with the direction of an applied voltage. Generally, a crystal diode is a p-n junction interface formed by sintering a p-type semiconductor and an n-type semiconductor. Space charge layers are formed on two sides of the interface to form a self-established electric field. When the applied voltage is equal to zero, the diffusion current and the drift current caused by the self-established electric field are equal to each other due to the concentration difference of carriers on both sides of the p-n junction, so that the diode is in an electric balance state, and the characteristic is also the diode characteristic in a normal state.
The diode is one of the most commonly used electronic elements, the most characteristic of the diode is unidirectional conduction, namely, current can only flow through the diode in one direction, the diode is provided with a rectifying circuit, a detection circuit, a voltage stabilizing circuit and various modulation circuits which are mainly formed by the diode, the principle of the diode is very simple, just because of the invention of the diode and other elements, the world of colorful electronic information is born, and since the effect of the diode is large, how to detect the element is provided, the fact is very simple, the diode is bad if a reverse resistance is measured by a multimeter by hitting a resistance gear, and the diode is good if the reverse resistance is large.
When a forward voltage is applied to the diode, the forward voltage is small at the initial part of the forward characteristic and is not enough to overcome the blocking effect of an electric field in a PN junction, and the forward current is almost zero, and the section is called a dead zone. This forward voltage that fails to turn on the diode is referred to as the dead band voltage. When the forward voltage is larger than the dead zone voltage, the electric field in the PN junction is overcome, the diode is conducted, and the current rapidly rises along with the increase of the voltage. In the current range normally used, the voltage across the diode remains almost constant when conducting, this voltage being referred to as the forward voltage of the diode.
When the reverse voltage applied to the diode does not exceed a certain range, the current passing through the diode is reverse current formed by the drift motion of minority carriers, and the diode is in a cut-off state because the reverse current is very small. This reverse current is also called reverse saturation current or leakage current, and the reverse saturation current of the diode is greatly affected by temperature. When the applied reverse voltage exceeds a certain value, the reverse current suddenly increases, and this phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the diode reverse breakdown voltage; the diode loses one-way conductivity upon electrical breakdown; if the diode is not overheated due to electric breakdown, the unidirectional conductivity is not always permanently damaged, the performance can still be restored after the external voltage is removed, otherwise, the diode is damaged, and therefore, the phenomenon that the reverse voltage applied to the diode is too high is avoided when the diode is used; because the common diode has simple structure and poor heat dissipation performance, when the diode is not timely dissipated under the condition that the diode is overheated due to electric breakdown, the unidirectional conductivity is permanently damaged with high probability.
Therefore, the inventor provides a diode structure by combining various factors.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a diode structure to solve the problem that proposes among the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme:
the utility model provides a diode structure, includes shell, first electrode and second electrode pass shell both ends fixed mounting in the inside of diode, be provided with the radiating groove on the shell, the radiating groove is half-circular arc and arranges on diode shell's surface uniformly, conveniently increases the surface area of diode shell and external contact to improve the heat dispersion of diode greatly.
When in work: when current passes through the diode through the first electrode and the second electrode, the tube core is heated when the current passes through the tube in the diode, the temperature rises, and when the temperature exceeds an allowable limit, the tube core is overheated and damaged.
As a further aspect of the present invention: a gap is arranged inside the shell; and a P-type semiconductor and an N-type semiconductor are arranged in the gap.
As a further aspect of the present invention: the first electrode in the diode is connected to the P-type semiconductor, the second electrode in the diode is connected to the N-type semiconductor, and a PN junction is arranged between the P-type semiconductor and the N-type semiconductor.
As a further aspect of the present invention: and a gap inside the shell is filled with cooling liquid, and the cooling liquid is insulating liquid, so that the temperature is conveniently reduced, and the short circuit of the diode is prevented.
As a further aspect of the present invention: and sealing rings are arranged between the first electrode and the shell, the second electrode and the shell, so that the leakage of the cooling liquid is prevented conveniently.
As a further aspect of the present invention: the surface of the end part of the shell is provided with a through hole at the side edge of the first electrode, and the through hole is communicated with the inside and the outside of the shell, so that cooling liquid is conveniently injected into a gap in the shell.
As a further aspect of the present invention: install the rubber buffer that has certain elasticity in the through-hole, conveniently block the through-hole, prevent that the coolant liquid from flowing out.
Compared with the prior art, the utility model discloses the beneficial effect of following several aspects has:
1. the utility model provides a diode structure, the structure sets up ingenious and arrange rationally, the utility model discloses in because the radiating groove that sets up on the diode shell is showing the surface area that has increased diode shell and external contact, compare the heat dispersion that then obviously improved the diode with ordinary diode, can distribute away the heat of diode core more fast, have the function that obviously reduces diode core temperature, and the temperature that reduces the diode just can effectively protect the diode can not arouse because of the electric breakdown overheated, effectively avoided leading to diode one-way conductivity to be destroyed by the permanence because of overheated.
2. The utility model discloses the inside space intussuseption of shell of further design is filled with the coolant liquid, the coolant liquid is insulating type liquid, has the cooling and prevents the beneficial effect of diode short circuit.
3. The utility model discloses the shell end surface that further designs is located first electrode side and is provided with the through-hole, and the beneficial effect of coolant liquid is poured into in the space in to the through-hole intercommunication casing inside and outside to the casing.
4. The utility model discloses install the rubber buffer that has certain elasticity in the through-hole of further design, conveniently block the through-hole, have the function that prevents the coolant liquid outflow.
Drawings
Fig. 1 is a schematic structural diagram of a diode structure.
Fig. 2 is a side cross-sectional view of a diode structure.
Fig. 3 is a front partial cross-sectional view of a diode structure.
In the figure: 1. a housing; 2. a first electrode; 3. a second electrode; 4. a heat sink; 5. a P-type semiconductor; 6. a PN junction; 7. an N-type semiconductor; 8. cooling liquid; 9. a seal ring; 10. a rubber plug; 11. and a through hole.
Detailed Description
The technical solution of the present patent will be described in further detail with reference to the following embodiments.
Referring to fig. 1-3, a diode structure includes a housing 1, a first electrode 2 and a second electrode 3, wherein the first electrode 2 and the second electrode 3 are fixedly mounted inside a diode through two ends of the housing 1, the housing 1 is provided with heat dissipation grooves 4, and the heat dissipation grooves 4 are uniformly arranged on the surface of the diode housing 1 in a semi-circular arc shape, so as to conveniently increase the surface area of the diode housing 1 contacting with the outside, thereby greatly improving the heat dissipation performance of the diode; a gap is arranged inside the shell 1; a P-type semiconductor 5 and an N-type semiconductor 7 are arranged in the gap; a first electrode 2 in the diode is connected to a P-type semiconductor 5, a second electrode 3 in the diode is connected to an N-type semiconductor 7, and a PN junction 6 is arranged between the P-type semiconductor 5 and the N-type semiconductor 7; a gap inside the shell 1 is filled with cooling liquid 8, and the cooling liquid 8 is insulating liquid, so that the temperature is conveniently reduced, and the short circuit of the diode is prevented; a sealing ring 9 is arranged between the first electrode 2 and the second electrode 3 and the shell 1, so that the cooling liquid 8 is prevented from leaking out; the surface of the end part of the shell 1 is provided with a through hole 11 positioned on the side edge of the first electrode 2, and the through hole 11 is communicated with the inside and the outside of the shell 1, so that cooling liquid 8 can be conveniently injected into a gap in the shell 1; install in the through-hole 11 and have certain elastic rubber buffer 10, conveniently block through-hole 11, prevent that coolant liquid 8 from flowing.
The utility model discloses a theory of operation is: when the diode is operated, when current passes through the diode through the first electrode 2 and the second electrode 3, the tube core in the diode is heated because the current passes through the tube, the temperature rises, and when the temperature exceeds an allowable limit, the tube core is overheated and damaged, and at the moment, because the heat dissipation groove 4 arranged on the diode shell 1 obviously increases the surface area of the diode shell 1 contacting with the outside, the heat dissipation performance of the diode is obviously improved compared with that of a common diode; in addition, the cooling liquid 8 is filled in the gap inside the diode shell 1, the cooling liquid 8 is insulating liquid, the temperature of the diode core is convenient to reduce, the short circuit of the diode is effectively prevented, the heat of the diode core can be more quickly dissipated through the cooling liquid 8, the function of obviously reducing the temperature of the diode core is achieved, the diode can be effectively protected from being overheated due to electric breakdown by reducing the temperature of the diode, and the phenomenon that the unidirectional conductivity of the diode is permanently damaged due to overheating is effectively avoided.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
Although the preferred embodiments of the present patent have been described in detail, the present patent is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present patent within the knowledge of those skilled in the art.
Claims (7)
1. The utility model provides a diode structure, includes shell (1), first electrode (2) and second electrode (3), its characterized in that, shell (1) both ends fixed mounting is passed in the inside of diode in first electrode (2) and second electrode (3), be provided with radiating groove (4) on shell (1), radiating groove (4) are half-circular arc and arrange on the surface of diode shell (1) uniformly.
2. A diode structure according to claim 1, characterized in that said housing (1) is internally provided with a void; and a P-type semiconductor (5) and an N-type semiconductor (7) are arranged in the gap.
3. A diode structure according to claim 2, characterized in that said diode internal first electrode (2) is connected to a P-type semiconductor (5), said diode internal second electrode (3) is connected to an N-type semiconductor (7), and a PN-junction (6) is arranged between said P-type semiconductor (5) and said N-type semiconductor (7).
4. A diode structure according to claim 2, characterized in that the space inside the housing (1) is filled with a cooling liquid (8), and the cooling liquid (8) is an insulating liquid.
5. A diode structure according to claim 3, characterised in that sealing rings (9) are arranged between said first (2) and second (3) electrodes and the housing (1).
6. A diode structure according to claim 5, characterized in that the end surface of the outer envelope (1) on the side of the first electrode (2) is provided with through holes (11), said through holes (11) communicating the inside and the outside of the outer envelope (1).
7. A diode structure according to claim 6, characterized in that a rubber stopper (10) with a certain elasticity is mounted in said through hole (11).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202021672417.XU CN213071101U (en) | 2020-08-12 | 2020-08-12 | Diode structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202021672417.XU CN213071101U (en) | 2020-08-12 | 2020-08-12 | Diode structure |
Publications (1)
Publication Number | Publication Date |
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CN213071101U true CN213071101U (en) | 2021-04-27 |
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Family Applications (1)
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CN202021672417.XU Active CN213071101U (en) | 2020-08-12 | 2020-08-12 | Diode structure |
Country Status (1)
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CN (1) | CN213071101U (en) |
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2020
- 2020-08-12 CN CN202021672417.XU patent/CN213071101U/en active Active
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